Chemical vapor deposition furnace exhaust cleaning device for producing silicon carbide coating

Abstract

The utility model provides a kind of chemical vapor deposition furnace waste gas cleaning device for silicon carbide coating production, belong to chemical vapor deposition technical field, including left suction component, right suction component, suction fan and multiple pipelines, left suction component and right suction component are located at the both sides of furnace cover respectively, can be set around furnace cover, suction fan is connected with left suction component or right suction component by pipeline, the gas exhaust from furnace cover can be sucked by the operation of suction fan, gas flows through left suction component or right suction component, pipeline and suction fan in turn, and is discharged to the position far from chemical vapor deposition furnace.The utility model provides a kind of chemical vapor deposition furnace waste gas cleaning device for silicon carbide coating production, so that the acidic gas discharged when preparing silicon carbide coating will not cause corrosion, can clean the technical effect of waste gas.

Description

Technical Field

[0001] This utility model belongs to the field of chemical vapor deposition technology, and more specifically, it relates to a waste gas cleaning device for chemical vapor deposition furnaces used in silicon carbide coating production. Background Technology

[0002] Graphite substrates are graphite-based composite materials, multifunctional materials made by combining graphite as the matrix or reinforcing phase with other materials (such as metals, ceramics, or polymers) through composite processes (such as hot pressing, chemical vapor deposition, etc.). Currently, to improve the oxidation and corrosion resistance of graphite substrates in high-temperature H2 environments, a dense coating with oxidation and corrosion resistance is often grown on the surface of the graphite substrate; silicon carbide coatings are commonly used. To improve the performance of silicon carbide coatings, chemical vapor deposition is frequently used for their preparation. During the growth process, MTS (methyltrichlorosilane) and SiCl4 are typically used as silicon sources. Both silicon sources contain Cl ions, and HCl is generated during the reaction, resulting in an acidic atmosphere in the chamber. Opening the chamber releases a strongly irritating gas that can cause varying degrees of corrosion to the chamber, pipelines, and cleanroom walls. Therefore, timely removal of HCl and other waste gases generated during the reaction process is crucial when using chemical vapor deposition to prepare silicon carbide coatings. Utility Model Content

[0003] The purpose of this invention is to provide a waste gas cleaning device for a chemical vapor deposition furnace used in the production of silicon carbide coatings, which aims to solve the technical problem of corrosion caused by the generation of acidic gases during the reaction when preparing silicon carbide coatings by chemical vapor deposition.

[0004] To achieve the above objectives, the technical solution adopted by this utility model is: to provide a waste gas cleaning device for a chemical vapor deposition furnace used in silicon carbide coating production, comprising:

[0005] The left exhaust assembly, located on one side near the furnace cover of the chemical vapor deposition furnace, has multiple exhaust vents;

[0006] The right exhaust assembly, located on the other side of the furnace cover near the chemical vapor deposition furnace, has multiple exhaust vents;

[0007] A blower having a suction end, the blower being used to draw in gases discharged from the furnace lid of a chemical vapor deposition furnace;

[0008] Multiple pipelines are connected at one end to the exhaust end of the exhaust fan and at the other end to the left exhaust assembly, and at one end to the exhaust end of the exhaust fan and at the other end to the right exhaust assembly. The gas discharged from the furnace cover of the chemical vapor deposition furnace flows sequentially through the left exhaust assembly or the right exhaust assembly, the pipelines and the exhaust fan.

[0009] In one possible implementation, the left exhaust assembly and the right exhaust assembly have the same structure and are both semi-circular in shape. They are both located in the axial extension direction of the chemical vapor deposition furnace cover. The left exhaust assembly and the right exhaust assembly can be combined and connected to form a ring that surrounds the furnace cover of the chemical vapor deposition furnace. The inner diameter of the ring formed by the left exhaust assembly and the right exhaust assembly is larger than the outer diameter of the furnace cover.

[0010] In one possible implementation, both the left exhaust assembly and the right exhaust assembly include:

[0011] The arc-shaped plate is semi-circular, and multiple exhaust ports are evenly distributed along the arc direction of the arc-shaped plate. The exhaust ports penetrate along the thickness direction of the arc-shaped plate. The end of the pipe away from the exhaust fan is inserted into one of the exhaust ports. The pipe can be connected to the exhaust ports at different positions to draw in the gas discharged from different positions at the furnace cover of the chemical vapor deposition furnace.

[0012] In one possible implementation, the left exhaust assembly and the right exhaust assembly further include:

[0013] An exhaust pipe is inserted into the exhaust port and extends out of the exhaust port at both ends. The two ends of the exhaust pipe are located on the inner and outer sides of the arc-shaped plate, respectively. The end of the pipeline away from the exhaust fan is connected to the end of the exhaust pipe located on the outer side of the arc-shaped plate. Gas discharged from the furnace cover of the chemical vapor deposition furnace enters the exhaust pipe and then enters the pipeline.

[0014] In one possible implementation, one end of the extraction pipe located inside the arc-shaped plate is connected to one end of a telescopic pipe, the telescopic pipe having radial extension and retraction freedom along the arc-shaped plate, and the position of the other end of the telescopic pipe can be adjusted by means of the telescopic pipe and is used to extract the discharged gas toward the furnace cover of the chemical vapor deposition furnace.

[0015] In one possible implementation, the outer wall of the chemical vapor deposition furnace is connected to two sets of telescopic pushers. The two sets of telescopic pushers are located on both sides of the furnace cover. One end of each set of telescopic pushers is detachably connected to the outer wall of the chemical vapor deposition furnace, and the other end is connected to the outer wall of the left exhaust assembly or the right exhaust assembly, respectively. The two sets of telescopic pushers are adapted to push the left exhaust assembly or the right exhaust assembly to move radially along the furnace cover of the chemical vapor deposition furnace, thereby adjusting the distance between them and the furnace cover.

[0016] In one possible implementation, the telescopic pusher is an electrically operated telescopic rod.

[0017] In one possible implementation, a sensor is connected to the outer wall of the chemical vapor deposition furnace. The sensor is used to detect the position of the furnace cover. The sensor is electrically connected to the exhaust fan. When the sensor detects that the furnace cover is moving away from the chemical vapor deposition furnace, it sends a signal to the exhaust fan, and the exhaust fan starts to run.

[0018] In one possible implementation, the exhaust fan is electrically connected to a control panel, which is connected to the outer wall of the exhaust fan, and the control panel has a control module adapted to control the operation of the exhaust fan.

[0019] In one possible implementation, the control panel has a first wireless communication module, and the exhaust gas cleaning device for the chemical vapor deposition furnace for silicon carbide coating production also includes a remote controller. The remote controller has a second wireless communication module, which is wirelessly connected to the first wireless communication module. The remote controller also has a remote control module suitable for controlling the operation of the exhaust fan.

[0020] The beneficial effects of the exhaust gas cleaning device for a chemical vapor deposition furnace used in silicon carbide coating production provided by this utility model are as follows: Compared with the prior art, the exhaust gas cleaning device for a chemical vapor deposition furnace used in silicon carbide coating production of this utility model includes a left exhaust component, a right exhaust component, an exhaust fan, and multiple pipelines. The left and right exhaust components are located on both sides of the furnace cover and can be arranged around the furnace cover. The exhaust fan is connected to the left or right exhaust component through the pipelines. The operation of the exhaust fan can draw in the gas discharged from the furnace cover. The gas flows through the left or right exhaust component, the pipelines, and the exhaust fan in sequence, and is discharged to a position away from the chemical vapor deposition furnace. This solves the technical problem of acidic gas generation causing corrosion during the preparation of silicon carbide coating, and enables the cleaning of exhaust gas. The discharged acidic gas will not cause corrosion. Attached Figure Description

[0021] To more clearly illustrate the technical solutions in the embodiments of this utility model, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0022] Figure 1 A schematic diagram of the structure of a chemical vapor deposition furnace exhaust gas cleaning device for silicon carbide coating production provided in this embodiment of the present invention;

[0023] Figure 2A schematic diagram of the structure of a waste gas cleaning device for a chemical vapor deposition furnace used in silicon carbide coating production and its connection to the chemical vapor deposition furnace, provided for an embodiment of this utility model;

[0024] Figure 3 A schematic diagram of the left exhaust component of a chemical vapor deposition furnace exhaust gas cleaning device for silicon carbide coating production is provided for an embodiment of this utility model.

[0025] Figure 4 A schematic diagram of the right exhaust component of a chemical vapor deposition furnace exhaust gas cleaning device for silicon carbide coating production is provided for an embodiment of this utility model.

[0026] Figure 5 This is a partial structural diagram of the left and right exhaust components of a chemical vapor deposition furnace exhaust gas cleaning device for silicon carbide coating production, provided for an embodiment of this utility model.

[0027] Explanation of reference numerals in the attached figures:

[0028] 1. Left exhaust assembly; 11. Arc plate; 12. Exhaust pipe; 13. Telescopic pipe; 2. Right exhaust assembly; 3. Exhaust fan; 4. Piping; 5. Chemical vapor deposition furnace; 6. Furnace cover; 7. Exhaust vent; 8. Telescopic pusher; 9. Sensor; 10. Control panel; 110. Remote controller. Detailed Implementation

[0029] To make the technical problems, technical solutions, and beneficial effects of this utility model clearer, the present utility model will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present utility model and are not intended to limit the present utility model.

[0030] Please refer to the following: Figures 1 to 4 This invention provides a waste gas cleaning device for a chemical vapor deposition furnace used in silicon carbide coating production. The device includes a left exhaust assembly 1, a right exhaust assembly 2, an exhaust fan 3, and multiple pipes 4. The left exhaust assembly 1 is located near the furnace cover 6 of the chemical vapor deposition furnace 5 and has multiple exhaust ports 7. The right exhaust assembly 2 is located near the other side of the furnace cover 6 of the chemical vapor deposition furnace 5 and also has multiple exhaust ports 7. The exhaust fan 3 has an exhaust end and is used to draw in the gas discharged from the furnace cover 6 of the chemical vapor deposition furnace 5. Multiple pipes 4 are connected at one end to the exhaust end of the exhaust fan 3 and at the other end to the left exhaust assembly 1, and at one end to the exhaust end of the exhaust fan 3 and at the other end to the right exhaust assembly 2. The gas discharged from the furnace cover 6 of the chemical vapor deposition furnace 5 flows sequentially through the left exhaust assembly 1 or the right exhaust assembly 2, the pipes 4, and the exhaust fan 3.

[0031] This utility model provides a waste gas cleaning device for a chemical vapor deposition furnace used in silicon carbide coating production. Compared with the prior art, the left exhaust assembly 1 and the right exhaust assembly 2 are located on both sides of the furnace cover 6 and can be arranged around the furnace cover 6. The exhaust fan 3 is connected to the left exhaust assembly 1 or the right exhaust assembly 2 through the pipeline 4. The operation of the exhaust fan 3 can draw in the gas discharged from the furnace cover 6. The gas flows sequentially through the left exhaust assembly 1 or the right exhaust assembly 2, the pipeline 4 and the exhaust fan 3, and is discharged to a position away from the chemical vapor deposition furnace 5. This solves the technical problem of acidic gas generation causing corrosion during the preparation of silicon carbide coating, and enables the cleaning of waste gas. The discharged acidic gas will not cause corrosion.

[0032] The exhaust fan 3 in this embodiment uses existing technology to achieve exhaust action, thereby drawing in the gas discharged from the furnace cover 6. Parameters such as the operating time, start / stop frequency, and operating speed of the exhaust fan 3 can be set. The pipe 4 is a type of conduit; during exhaust, the pipe 4 will not experience compression or deformation, thus not affecting gas extraction. The extracted gas, after being discharged from the exhaust fan 3, can be discharged into the atmosphere or into gas treatment equipment (existing technology capable of gas treatment), thereby reducing gas pollution. In existing technology, the chemical vapor deposition furnace 5 has a furnace cover 6 on its side. Opening the furnace cover 6 allows the internal chambers of the chemical vapor deposition furnace 5 to open, simultaneously venting acidic gases. By placing this invention near the furnace cover 6, it can effectively extract and clean the discharged gas, preventing acidic gases from corroding the equipment. The exhaust fan 3 has wheels at its bottom, allowing it to be moved easily to other locations for operation. Figure 1-5 The middle arrow indicates the direction of gas flow.

[0033] In some embodiments, please refer to Figures 1 to 4 The left and right exhaust components 1 and 2 have identical structures and are both semi-circular in shape. They are both positioned along the axial extension direction of the furnace cover 6 of the chemical vapor deposition furnace 5. The left and right exhaust components 1 and 2 can be combined and joined to form a ring that surrounds the furnace cover 6 of the chemical vapor deposition furnace 5. The inner diameter of the ring formed by the left and right exhaust components 1 and 2 is larger than the outer diameter of the furnace cover 6. Both the left and right exhaust components 1 and 2 have a certain thickness, with exhaust ports 7 penetrating along their thickness direction. The left and right exhaust components 1 and 2 are not positioned radially on the furnace cover 6, but are offset from it. This allows them to draw in gases discharged from the furnace cover 6, preventing the discharge of acidic gases and thus avoiding corrosion of the equipment. There are gaps between the inner walls of the left and right exhaust components 1 and 2 and the furnace cover 6, ensuring that the normal opening and closing of the furnace cover 6 is not affected.

[0034] Specifically, the left exhaust assembly 1 and the right exhaust assembly 2 can be fixed in place using brackets or other fixing devices before use. The exhaust fan 3 and the chemical vapor deposition furnace 5 can be mounted on the worktable.

[0035] In some embodiments, please refer to Figures 1 to 4 Both the left exhaust assembly 1 and the right exhaust assembly 2 include an arc-shaped plate 11, which is semi-circular. Multiple exhaust ports 7 are evenly distributed along the arc direction of the arc-shaped plate 11, and the exhaust ports 7 penetrate along the thickness direction of the arc-shaped plate 11. The end of the pipe 4 furthest from the exhaust fan 3 is inserted into one of the exhaust ports 7. The pipe 4 can be connected to exhaust ports 7 at different locations to extract gas discharged from different positions on the furnace cover 6 of the chemical vapor deposition furnace 5. The purpose of having multiple exhaust ports 7 is to allow pipes to be inserted into exhaust ports 7 at different positions, thereby achieving efficient extraction of gas discharged from the furnace cover 6. If there is a large amount of gas at the lower part of the furnace cover 6, the pipe 4 can be connected to the exhaust ports 7 located at the lower part of the left exhaust assembly 1 and the right exhaust assembly 2, thus achieving efficient gas extraction. The gas then enters the pipe 4 after passing through the exhaust port 7. If one pipe 4 cannot effectively extract the gas, multiple pipes 4 can be installed, such as... Figure 1 As shown in the diagram, multiple interfaces can be provided at the exhaust end of the exhaust fan 3, so that one end of each of the multiple pipes 4 can be connected to each interface. In this way, by operating the exhaust fan 3, air can be drawn from the multiple pipes 4 at the same time, and the multiple exhaust ports 7 can simultaneously draw the exhaust gas. This helps to improve the gas extraction efficiency, effectively prevent gas leakage or insufficient extraction, and prevent corrosion.

[0036] When it is inconvenient to insert pipe 4 into exhaust port 7, in some embodiments, please refer to Figures 1 to 4The left exhaust assembly 1 and the right exhaust assembly 2 also include an exhaust pipe 12, which is inserted into the exhaust port 7 and extends out of the exhaust port 7 at both ends. The two ends of the exhaust pipe 12 are located on the inner and outer sides of the arc plate 11, respectively. The end of the pipeline 4 away from the exhaust fan 3 is connected to the end of the exhaust pipe 12 located on the outer side of the arc plate 11. The gas discharged from the furnace cover 6 of the chemical vapor deposition furnace 5 enters the exhaust pipe 12 and then enters the pipeline 4. The exhaust pipe 12 is a tube made of a rigid material. It is inserted into the exhaust port 7 at a certain position. When passing through, one end of the pipeline 4 is connected to the exhaust pipe 12, so the inner end of the exhaust pipe 12 (located inside the left exhaust assembly 1 and the right exhaust assembly 2) can draw in gas. The position of this inner end can be adjusted by the insertion depth of the exhaust pipe 12, thereby effectively drawing in the gas discharged from the furnace cover 6. If the inner end is placed in the center of the furnace cover 6, the gas in the center position can be preferentially drawn in. When the exhaust pipe 12 is not used, it is impossible to preferentially extract the gas located at the center of the furnace cover 6, thus reducing the leakage or discharge of acidic gases. When the exhaust pipe 12 is used, the gas directly enters the exhaust pipe 12 and no longer enters the exhaust port 7. The outer diameter of the exhaust pipe 12 is slightly smaller than the inner diameter of the exhaust port 7, so the exhaust pipe 12 will not move or slip inside the exhaust port 7.

[0037] When the position of the inner end of the extraction pipe 12 is insufficient to extract gas from different locations, in some embodiments, please refer to... Figure 5 One end of the extraction pipe 12, located inside the arc-shaped plate 11, is connected to one end of the telescopic pipe 13. The telescopic pipe 13 has radial extension and retraction freedom along the arc-shaped plate 11. The position of the other end of the telescopic pipe 13 can be adjusted using the telescopic pipe 13 and is used to draw gas discharged towards the furnace cover 6 of the chemical vapor deposition furnace 5. The telescopic pipe 13 is a type of pipe that can extend and bend within a certain range, such as a corrugated pipe. By adjusting the extension length and bending degree of the telescopic pipe 13, gas discharged from the furnace cover 6 can be drawn from different positions, achieving maximum gas extraction and improving extraction efficiency. The gas first enters the telescopic pipe 13, then the extraction pipe 12, and finally the pipeline 4. One end of the telescopic pipe 13 is inserted into the extraction pipe 12, and one end of the pipeline 4 is also inserted into the extraction pipe 12, which facilitates installation and improves installation efficiency.

[0038] To avoid the furnace cover 6 and to adjust the distance between the left exhaust assembly 1 and the right exhaust assembly 2, in some embodiments, please refer to... Figures 1 to 4Two sets of telescopic pushers 8 are connected to the outer wall of the chemical vapor deposition furnace 5. The two sets of telescopic pushers 8 are located on both sides of the furnace cover 6. One end of the two sets of telescopic pushers 8 is detachably connected to the outer wall of the chemical vapor deposition furnace 5, and the other end is connected to the outer wall of the left exhaust assembly 1 or the right exhaust assembly 2 respectively. The two sets of telescopic pushers 8 are adapted to push the left exhaust assembly 1 or the right exhaust assembly 2 to move radially along the furnace cover 6 of the chemical vapor deposition furnace 5, thereby adjusting the distance between them and the furnace cover 6. The position of the left exhaust assembly 1 or the right exhaust assembly 2 can be adjusted by the telescopic pusher 8, that is, the position in the horizontal direction of the chemical vapor deposition furnace 5. This can avoid or move away from the furnace cover 6. When not cleaning the exhaust gas, the left exhaust assembly 1 or the right exhaust assembly 2 can be moved away from the furnace cover 6. When cleaning the exhaust gas or extracting the gas, the left exhaust assembly 1 or the right exhaust assembly 2 can be moved in the opposite direction and brought closer to the furnace cover 6 until the left exhaust assembly 1 or the right exhaust assembly 2 are close to each other and form a ring. At this time, it does not affect the normal use of the furnace cover 6, and at the same time, it can effectively extract the gas after the furnace cover 6 is opened.

[0039] Specifically, the telescopic pusher 8 is an electrically operated telescopic rod. By controlling the extension and retraction length of this rod, the movement position of the left exhaust assembly 1 or the right exhaust assembly 2 can be controlled, thereby adjusting the gas suction position. This electrically operated telescopic rod is an existing technology that can achieve automatic extension and retraction. It can be electrically connected to a controller to control parameters such as its extension and retraction length. Operators only need to operate the controller.

[0040] To achieve automatic extraction of acidic gases, please refer to the following embodiments: Figure 2 A sensor 9 is connected to the outer wall of the chemical vapor deposition furnace 5. The sensor 9 is used to detect the position of the furnace cover 6 of the chemical vapor deposition furnace 5. The sensor 9 is electrically connected to the exhaust fan 3. When the sensor 9 detects that the furnace cover 6 is away from the chemical vapor deposition furnace 5, it sends a signal to the exhaust fan 3, and the exhaust fan 3 starts running. When the furnace cover 6 is opened, that is, when the furnace cover 6 is not in its original position, it can be detected by the sensor 9. The sensor 9 is a proximity sensor, an infrared sensor, or other sensor that can determine the presence or absence. When it is detected that the furnace cover 6 is not in its original position, it means that the furnace cover 6 has been opened, and a signal is sent to the exhaust fan 3, and the exhaust fan 3 runs to automatically draw in the gas.

[0041] In some embodiments, please refer to Figure 1The exhaust fan 3 is electrically connected to a control panel 10, which is attached to the outer wall of the exhaust fan 3. The control panel 10 has a control module suitable for controlling the operation of the exhaust fan 3. The control panel 10 has a first wireless communication module. The exhaust gas cleaning device for the chemical vapor deposition furnace 5 used in silicon carbide coating production also includes a remote controller 110. The remote controller 110 has a second wireless communication module, which is wirelessly connected to the first wireless communication module. The remote controller 110 has a remote control module suitable for controlling the operation of the exhaust fan 3. The control module includes control buttons, such as start / stop buttons and speed adjustment buttons, which can control the operation of the exhaust fan 3. The operator only needs to control the operating parameters of the exhaust fan 3 on the control panel 10. To achieve automatic control of the operation of the exhaust fan 3, the remote controller 110 can be set up, which can achieve the same function as the control panel 10, thus remotely controlling the operation of the exhaust fan 3 without having to operate the control panel 10. The first and second wireless communication modules are both existing technologies, such as 4G and GPRS wireless communication modules, which can realize wireless remote communication between each other, and enable the remote controller 110 to control the operation of the exhaust fan 3.

[0042] The above description is only a preferred embodiment of the present utility model and is not intended to limit the present utility model. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present utility model should be included within the protection scope of the present utility model.

Claims

1. A waste gas cleaning device for a chemical vapor deposition furnace used in silicon carbide coating production, characterized in that, include: The left exhaust assembly, located on one side near the furnace cover of the chemical vapor deposition furnace, has multiple exhaust vents; The right exhaust assembly, located on the other side of the furnace cover near the chemical vapor deposition furnace, has multiple exhaust vents; A blower having a suction end, the blower being used to draw in gases discharged from the furnace lid of a chemical vapor deposition furnace; Multiple pipelines are connected at one end to the exhaust end of the exhaust fan and at the other end to the left exhaust assembly, and at one end to the exhaust end of the exhaust fan and at the other end to the right exhaust assembly. The gas discharged from the furnace cover of the chemical vapor deposition furnace flows sequentially through the left exhaust assembly or the right exhaust assembly, the pipelines and the exhaust fan.

2. The waste gas cleaning device for a chemical vapor deposition furnace used in silicon carbide coating production as described in claim 1, characterized in that, The left and right exhaust components have the same structure and are both semi-circular in shape. They are both located in the axial extension direction of the chemical vapor deposition furnace cover. The left and right exhaust components can be combined and connected to form a ring that surrounds the furnace cover of the chemical vapor deposition furnace. The inner diameter of the ring formed by the left and right exhaust components is larger than the outer diameter of the furnace cover.

3. The waste gas cleaning device for a chemical vapor deposition furnace used in silicon carbide coating production as described in claim 1, characterized in that, Both the left exhaust assembly and the right exhaust assembly include: The arc-shaped plate is semi-circular, and multiple exhaust ports are evenly distributed along the arc direction of the arc-shaped plate. The exhaust ports penetrate along the thickness direction of the arc-shaped plate. The end of the pipe away from the exhaust fan is inserted into one of the exhaust ports. The pipe can be connected to the exhaust ports at different positions to draw in the gas discharged from different positions at the furnace cover of the chemical vapor deposition furnace.

4. The waste gas cleaning device for a chemical vapor deposition furnace used in silicon carbide coating production as described in claim 3, characterized in that, The left exhaust assembly and the right exhaust assembly further include: An exhaust pipe is inserted into the exhaust port and extends out of the exhaust port at both ends. The two ends of the exhaust pipe are located on the inner and outer sides of the arc-shaped plate, respectively. The end of the pipeline away from the exhaust fan is connected to the end of the exhaust pipe located on the outer side of the arc-shaped plate. Gas discharged from the furnace cover of the chemical vapor deposition furnace enters the exhaust pipe and then enters the pipeline.

5. The waste gas cleaning device for a chemical vapor deposition furnace used in silicon carbide coating production as described in claim 4, characterized in that, The exhaust pipe is located on the inner side of the arc plate, and one end of the telescopic pipe is connected to the other end of the telescopic pipe. The telescopic pipe has a radial extension and retraction degree along the arc plate. The position of the other end of the telescopic pipe can be adjusted by means of the telescopic pipe and is used to draw out the discharged gas toward the furnace cover of the chemical vapor deposition furnace.

6. The waste gas cleaning device for a chemical vapor deposition furnace used in silicon carbide coating production as described in claim 1, characterized in that, Two sets of telescopic pushers are connected to the outer wall of the chemical vapor deposition furnace. The two sets of telescopic pushers are located on both sides of the furnace cover. One end of each set of telescopic pushers is detachably connected to the outer wall of the chemical vapor deposition furnace, and the other end is connected to the outer wall of the left exhaust assembly or the right exhaust assembly, respectively. The two sets of telescopic pushers are adapted to push the left exhaust assembly or the right exhaust assembly to move radially along the furnace cover of the chemical vapor deposition furnace, thereby adjusting the distance between them and the furnace cover.

7. The waste gas cleaning device for a chemical vapor deposition furnace used in silicon carbide coating production as described in claim 6, characterized in that, The telescopic pusher is an electrically operated telescopic rod.

8. The waste gas cleaning device for a chemical vapor deposition furnace used in silicon carbide coating production as described in claim 1, characterized in that, A sensor is connected to the outer wall of the chemical vapor deposition furnace. The sensor is used to detect the position of the furnace cover. The sensor is electrically connected to the exhaust fan. When the sensor detects that the furnace cover is moving away from the chemical vapor deposition furnace, it sends a signal to the exhaust fan, and the exhaust fan starts to run.

9. The waste gas cleaning device for a chemical vapor deposition furnace used in silicon carbide coating production as described in claim 1, characterized in that, The exhaust fan is electrically connected to a control panel, which is connected to the outer wall of the exhaust fan. The control panel has a control module suitable for controlling the operation of the exhaust fan.

10. The waste gas cleaning device for a chemical vapor deposition furnace used in silicon carbide coating production as described in claim 9, characterized in that, The control panel has a first wireless communication module, and the exhaust gas cleaning device for the chemical vapor deposition furnace for silicon carbide coating production also includes a remote controller. The remote controller has a second wireless communication module, which is wirelessly connected to the first wireless communication module. The remote controller also has a remote control module suitable for controlling the operation of the exhaust fan.

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