Deposition apparatus

Abstract

The embodiment of the utility model relates to the field of semiconductor manufacturing, and provides deposition equipment which comprises a cavity, an air inlet mechanism, an extraction opening, a base, a wafer heater and a cooling system. The cooling system comprises a first pipeline, a second pipeline, a cooling source assembly and a controller, at least part of the first pipeline is arranged in the base, at least part of the second pipeline is arranged in the side wall of the cavity, the first pipeline and the second pipeline are connected with the cooling source assembly, and the cooling source assembly provides cooling liquid for the first pipeline to cool the wafer; the cooling source assembly provides cooling liquid for the second pipeline to cool the cavity, and the controller communicates with the cooling source assembly and is used for controlling the flowing speed of the cooling liquid in the first pipeline and the second pipeline. According to the embodiment of the invention, the reliability and efficiency of thin film preparation can be improved at least, and the preparation cost of deposition equipment can be reduced.

Description

Technical Field

[0001] This disclosure relates to the field of semiconductor manufacturing, and more particularly to a deposition apparatus. Background Technology

[0002] Deposition is a common film-forming process in semiconductor manufacturing. Deposition processes mainly include chemical vapor deposition (CVD), physical vapor deposition (PVD), and atomic layer deposition (ALD). Taking chemical vapor deposition as an example, it is a process in which reactants undergo a chemical reaction under gaseous conditions to generate a solid material that is deposited on the wafer surface to form a thin film. This process is achieved using deposition equipment.

[0003] However, the deposition equipment in the relevant technologies has certain problems, resulting in low reliability of the deposited films. Utility Model Content

[0004] This disclosure provides a deposition apparatus that can at least improve the reliability and efficiency of thin film preparation, and also reduce the manufacturing cost of the deposition apparatus.

[0005] According to some embodiments of this disclosure, a deposition apparatus is provided, comprising: a cavity; an air intake mechanism disposed at the top of the cavity, the air intake mechanism having an air intake hole and an air intake pipe communicating with the air intake hole, the air intake pipe communicating with the cavity, the air intake hole being used to connect to an air intake pipe for providing gas; an air extraction port communicating with the cavity; a base, the base having a bearing surface for supporting a wafer, the base being located within the cavity; a wafer heater, the wafer heater being disposed within the base for heating the wafer; and a cooling system, the cooling system comprising a first pipe, a second pipe, a cooling source assembly, and a controller, at least a portion of the first pipe being disposed within the base, at least a portion of the second pipe being disposed within the sidewall of the cavity, the first pipe and the second pipe being connected to the cooling source assembly, the cooling source assembly providing coolant to the first pipe to cool the wafer, the cooling source assembly providing coolant to the second pipe to cool the cavity, and the controller communicating with the cooling source assembly for controlling the flow rate of the coolant in the first pipe and the second pipe.

[0006] In some embodiments, the first pipe includes a first inflow pipe, a first cooling pipe, and a first outflow pipe that are connected to each other. The first cooling pipe is located inside the base. The coolant flows into the first cooling pipe through the first inflow pipe to cool the base and flows out through the first outflow pipe. The first cooling pipe is spiral in shape.

[0007] In some embodiments, at least a portion of the orthographic projection of the first cooling conduit onto the support surface extends beyond the outer edge of the orthographic projection of the wafer heater onto the support surface.

[0008] In some embodiments, the second pipe includes a second inflow pipe, a second cooling pipe, and a second outflow pipe that are connected to each other. The second cooling pipe is located inside the side wall of the cavity. The coolant flows into the second cooling pipe through the second inflow pipe to cool the side wall of the cavity and flows out through the second outflow pipe. The cavity includes an inner wall surface and an outer wall surface, and the second cooling pipe is located between the inner wall surface and the outer wall surface.

[0009] In some embodiments, the cooling source assembly includes: a storage tank for storing the coolant, the first pipe and the second pipe being respectively connected to the storage tank; and a cooler for cooling the coolant in the storage tank.

[0010] In some embodiments, the cooling system further includes: a first valve disposed on the first pipe and connected to the controller, the controller being configured to control the opening degree of the first valve to control the flow rate of the coolant in the first pipe; and a second valve disposed on the second pipe and connected to the controller, the controller being configured to control the opening degree of the second valve to control the flow rate of the coolant in the second pipe.

[0011] In some embodiments, the cooling system further includes: a first temperature sensor located on the base and connected to the controller, the first temperature sensor being used to test the temperature of the base and upload the temperature of the base to the controller, the controller being configured to open the first valve when the temperature of the base is greater than a first threshold temperature; the controller being further configured to close the first valve when the temperature of the base is less than or equal to the first threshold temperature; and a second temperature sensor located on the cavity and connected to the controller, the second temperature sensor being used to test the temperature of the cavity and upload the temperature of the cavity to the controller, the controller being configured to open the second valve when the temperature of the cavity is greater than a second threshold temperature; the controller being further configured to close the second valve when the temperature of the cavity is less than or equal to the second threshold temperature.

[0012] In some embodiments, the deposition apparatus further includes a plasma source assembly connected to the cavity for converting gas into plasma.

[0013] In some embodiments, the cavity includes an excitation cavity and a deposition cavity that are connected in a vertical direction, with the excitation cavity located above the deposition cavity; the excitation cavity is provided with the air intake mechanism and connected to the plasma source assembly, and the base is disposed in the deposition cavity.

[0014] In some embodiments, the second conduit is disposed within the sidewall of the deposition chamber, and the cooling system further includes: a third conduit disposed within the sidewall of the excitation chamber and connected to the cooling source assembly, the controller further being configured to control the coolant flow rate in the third conduit; and a third valve disposed on the third conduit and connected to the controller, the controller being configured to control the opening degree of the third valve to control the coolant flow rate in the third conduit.

[0015] The technical solutions provided in this disclosure have at least the following advantages:

[0016] When the wafer temperature exceeds a preset range, the coolant flow in the first pipe can be controlled by a controller. This allows the coolant in the first pipe of the cooling system to remove some of the heat from the wafer, keeping the wafer temperature within the preset range and improving the reliability of thin film fabrication. Furthermore, the second pipe of the cooling system can be used to cool the chamber, preventing excessive byproducts from forming on the chamber sidewalls due to overheating. This avoids a significant amount of gas failing to form a thin film, thus affecting the film fabrication efficiency. In other words, using the second pipe to cool the chamber reduces byproducts on the sidewalls, resulting in less gas forming byproducts and more gas forming a thin film, thereby improving film fabrication efficiency. Additionally, in this embodiment, the deposition apparatus shares a single cooling system for both the wafer and the cooling chamber, reducing the fabrication cost of the deposition apparatus. Attached Figure Description

[0017] One or more embodiments are illustrated by way of example with corresponding pictures in the accompanying drawings. These illustrations do not constitute a limitation on the embodiments. Unless otherwise stated, the pictures in the accompanying drawings do not constitute a limitation on scale. In order to more clearly illustrate the technical solutions in the embodiments of this disclosure or the conventional technology, the drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this disclosure. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0018] Figure 1 A schematic diagram of a deposition apparatus provided in an embodiment of this disclosure;

[0019] Figure 2 This is another schematic diagram of the deposition apparatus provided in an embodiment of the present disclosure;

[0020] Figure 3 The graphs show the trend of wafer temperature over time in a deposition equipment without a cooling system and the trend of wafer temperature over time in a deposition equipment with a cooling system. Detailed Implementation

[0021] Deposition equipment in related technologies includes a substrate and a wafer heater. The wafer heater is located inside the substrate and is used to heat the wafer placed on the substrate. However, during the use of the deposition equipment, some gases release heat when reacting on the wafer surface, causing the wafer temperature to exceed a preset range. Alternatively, if the gas is plasma, the plasma carries heat and adheres to the wafer, causing the wafer temperature to exceed the preset range. In these cases, even if the wafer heater is turned off to stop heating, it is difficult to reduce the wafer temperature back to the preset range. A wafer temperature exceeding the preset range affects the density and uniformity of the deposited film. Therefore, the reliability of thin film preparation using deposition equipment in related technologies is relatively low.

[0022] This disclosure provides a deposition apparatus. When the wafer temperature exceeds a preset range, the flow of coolant in the first pipe can be controlled by a controller. This allows the coolant in the first pipe of the cooling system to remove some of the heat from the wafer, keeping the wafer temperature within the preset range and improving the reliability of thin film fabrication. Furthermore, using the second pipe of the cooling system to cool the cavity avoids the formation of excessive byproducts on the cavity sidewalls due to excessive cavity temperature, preventing many gases from effectively forming a thin film and affecting the film fabrication efficiency. In other words, using the second pipe to cool the cavity reduces byproducts on the cavity sidewalls; less gas forming byproducts results in more gas forming a thin film, thus improving film fabrication efficiency. Additionally, compared to using two separate cooling systems to cool the substrate and cavity, this embodiment of the deposition apparatus shares a single cooling system for both the wafer and the cavity, reducing the fabrication cost of the deposition apparatus.

[0023] In the description of the embodiments of this disclosure, technical terms such as "first" and "second" are used only to distinguish different objects and should not be construed as indicating or implying relative importance or implicitly specifying the number, specific order, or primary or secondary relationship of the indicated technical features. In the description of the embodiments of this disclosure, "a plurality of" means two or more, unless otherwise explicitly defined.

[0024] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this disclosure. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0025] In the description of the embodiments of this disclosure, the term "and / or" is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent three cases: A exists, A and B exist simultaneously, and B exists. Additionally, the character " / " in this document generally indicates that the preceding and following related objects have an "or" relationship.

[0026] In the description of embodiments of this disclosure, the term "multiple" refers to two or more (including two), similarly, "multiple sets" refers to two or more (including two sets), and "multiple pieces" refers to two or more (including two pieces).

[0027] In the description of the embodiments of this disclosure, the technical terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," and "circumferential" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing the embodiments of this disclosure and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the embodiments of this disclosure.

[0028] In the description of the embodiments of this disclosure, unless otherwise expressly specified and limited, technical terms such as "installation," "connection," "joining," and "fixing" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in the embodiments of this disclosure according to the specific circumstances.

[0029] In the accompanying drawings corresponding to the embodiments of this disclosure, the thickness and area of ​​the layers are enlarged for better understanding and ease of description. When describing a component (such as a layer, film, region, or substrate) on or on the surface of another component, the component may be "directly" located on the surface of the other component, or there may be a third component between the two components. Conversely, when describing a component on the surface of another component, or when another component is formed or disposed on the surface of a component, it indicates that there is no third component between the two components. Furthermore, when describing a component as being "generally" formed on another component, it means that the component is not formed on the entire surface (or front surface) of the other component, nor is it formed on a portion of the edge of the entire surface.

[0030] In the description of embodiments of this disclosure, when a component "includes" another component, other components are not excluded unless otherwise stated, and may be further included. Furthermore, when a component such as a layer, film, region, or plate is referred to as being "on / located" on another component, it can be "directly on" the other component (i.e., located on the surface of the other component with no other components between them), or another component may be present therein. Additionally, when a component such as a layer, film, region, or plate is "directly located" on another component, or when a component such as a layer, film, region, or plate is located on the surface of another component, it indicates that no other components are located therein.

[0031] The embodiments of this disclosure will now be described in detail with reference to the accompanying drawings. However, those skilled in the art will understand that many technical details have been provided in the embodiments of this disclosure to facilitate a better understanding of the disclosure. However, the technical solutions claimed in this disclosure can be implemented even without these technical details and various variations and modifications based on the following embodiments.

[0032] Figure 1 This is a schematic diagram of a deposition apparatus provided in an embodiment of the present disclosure.

[0033] refer to Figure 1 The deposition equipment includes: a cavity 100, an inlet mechanism 101, an outlet 102, a base 103, a wafer heater 104, and a cooling system 105. The inlet mechanism 101 is located at the top of the cavity 100 and has an inlet port 111 and an inlet pipe (not labeled) connected to the inlet port. The inlet pipe is connected to the cavity 100, and the inlet port is used to connect to the inlet pipe supplying gas. The outlet 102 is connected to the cavity 100. The base 103 has a bearing surface 113 for supporting the wafer 11 and is located inside the cavity 100. The wafer heater 104 is located inside the base 103 and is used to heat the wafer 11. The cooling system 105 includes a first pipe 115, a second pipe 125, and a cooling... The source component 135 and the controller (not shown) are provided. At least a portion of the first pipe 115 is disposed in the base 103, and at least a portion of the second pipe 125 is disposed in the side wall of the cavity 100. The first pipe 115 and the second pipe 125 are connected to the cooling source component 135. The cooling source component 135 provides coolant to the first pipe 115 to cool the wafer 11, and the cooling source component 135 provides coolant to the second pipe 125 to cool the cavity 100. The controller is connected to the cooling source component 135 and is used to control the flow rate of the coolant in the first pipe 115 and the second pipe 125.

[0034] Deposition equipment is used to perform CVD or ALD reactions to prepare thin films on wafer 11. CVD includes atmospheric pressure chemical vapor deposition (APCVD), low pressure chemical vapor deposition (LPCVD), ultra-high vacuum chemical vapor deposition (UHVCVD), metal-organic chemical vapor deposition (MOCVD), and plasma-enhanced chemical vapor deposition (PECVD), etc.

[0035] The cavity 100 provides a fabrication space for fabricating a template on the wafer 11. Specifically, the cavity 100 includes an inner wall surface 110 and an outer wall surface 120. The inner wall surface 110 encloses a reaction chamber (not labeled), which provides a fabrication space for fabricating a thin film on the wafer 11. The inner wall surface 110 and the outer wall surface 120 form the sidewalls of the cavity 100.

[0036] The gas inlet mechanism 101 is used to supply gas to the deposition equipment. The gas can be at least one of a reaction gas, a cleaning gas, or a carrier gas.

[0037] The exhaust port 102 is connected to the cavity 100 and is used to remove the gas inside the cavity 100.

[0038] The base 103 is used to place the wafer 11. The bearing surface 113 of the base 103 is in contact with the wafer 11, providing support for the wafer 11.

[0039] A wafer heater 104 is disposed within the base 103 for heating the wafer 11.

[0040] In some embodiments, the wafer heater 104 is a wafer heating plate made of ceramic or aluminum / stainless steel. A resistance wire is provided inside the wafer heating plate, and the heating temperature of the wafer heater 104 is adjusted by controlling the current of the resistance wire.

[0041] It should be noted that in this embodiment, the wafer heater 104 heats the wafer 11, which essentially means that the wafer heater 104 heats the carrier surface 113. Since the carrier surface 113 is in direct contact with the wafer 11, it transfers heat to the wafer 11. That is, the wafer heater 104 heats the wafer 11 by heating the carrier surface 113 of the heating base 103. Furthermore, when the wafer heater 104 heats the wafer 11, some heat is radiated to the sidewalls of the cavity 100, resulting in a higher temperature on the sidewalls. Therefore, a cooling system 105 is needed to cool and control the temperature of the sidewalls of the cavity 100.

[0042] The cooling system 105 is used to cool the wafer 11 on the base 103 and also to cool the cavity 100.

[0043] The cooling source assembly 135 in the cooling system 105 provides coolant to the first conduit 115 to cool the wafer 11; and provides coolant to the second conduit 125 to cool the cavity 100.

[0044] It should be noted that the coolant in the first pipe 115 cools the wafer 11. Essentially, when the coolant flows through the base 103, it carries away some heat from the bearing surface 113, lowering its temperature. This temperature reduction leads to a decrease in the temperature of the wafer 11, thus achieving the cooling effect of the coolant in the first pipe 115 on the wafer 11. In other words, the coolant in the first pipe 115 of the cooling system 105 cools the wafer 11 by cooling the bearing surface 113 of the wafer 11. The cooling cavity 100 of the cooling system 105 mentioned in this embodiment is essentially the sidewall of the cooling cavity 100. This is to avoid excessively high temperatures on the inner wall surface 110 of the cavity 100, which could lead to the formation of numerous byproducts on the sidewall of the cavity 100, preventing the effective formation of a thin film and thus affecting the film preparation efficiency.

[0045] In some embodiments, the first pipe 115 includes a first inflow pipe 1151, a first cooling pipe 1152, and a first outflow pipe 1153 connected to each other. The first cooling pipe 1152 is located within the base 103. Coolant flows into the first cooling pipe 1152 through the first inflow pipe 1151 to cool the base 103 and flows out through the first outflow pipe 1153. The first cooling pipe 1152 is spiral-shaped. The spiral shape of the first cooling pipe 1152 increases the path length of the first cooling pipe 1152 per unit area, allowing the first cooling pipe 1152 to absorb heat more fully, thus achieving a better cooling effect.

[0046] in, Figure 1 The first cooling pipe 1152, which is circular in shape, has a spiral cross-sectional shape.

[0047] In some embodiments, at least a portion of the orthographic projection of the first cooling conduit 1152 onto the support surface 113 extends beyond the outer edge of the orthographic projection of the wafer heater 104 onto the support surface 113. The wafer 11 is typically placed within the orthographic projection of the wafer heater 104 onto the support surface 113, and since at least a portion of the orthographic projection of the first cooling conduit 1152 onto the support surface 113 extends beyond the outer edge of the orthographic projection of the wafer heater 104 onto the support surface 113, the first cooling conduit 1152 can cool the entire wafer 11 on the support surface 113. This avoids the situation where parts of the wafer 11 are not cooled due to the first cooling conduit 1152 having too small an orthographic projection onto the support surface 113.

[0048] In some embodiments, the second conduit 125 includes a second inflow conduit 1251, a second cooling conduit 1252, and a second outflow conduit 1253 connected to each other. The second cooling conduit 1252 is located inside the side wall of the cavity 100. Coolant flows into the second cooling conduit 1252 through the second inflow conduit 1251 to cool the side wall of the cavity 100, and flows out through the second outflow conduit 1253. The cavity 100 includes an inner wall surface 110 and an outer wall surface 120, and the second cooling conduit 1252 is located between the inner wall surface 110 and the outer wall surface 120. Compared to the option of placing the second cooling conduit 1252 on the inner wall surface 110, placing the second cooling conduit 1252 between the inner wall surface 110 and the outer wall surface 120 can ensure that byproducts generated during thin film preparation will not be deposited on the second cooling conduit 1252, thereby protecting the second cooling conduit 1252.

[0049] In addition, the second cooling pipe 1252 can be distributed in a cylindrical spiral shape inside the side wall of the cavity 100. Figure 1 The multiple circular second cooling pipes 1252 have a cylindrical spiral cross-sectional shape.

[0050] In some embodiments, the cooling source assembly 135 includes a storage tank (not shown) and a cooler (not shown). The storage tank stores coolant, and a first pipe 115 and a second pipe 125 are respectively connected to the storage tank. The cooler cools the coolant in the storage tank. After absorbing heat from the wafer 11, the coolant flowing back to the storage tank in the first pipe 115 has a higher temperature, resulting in a higher temperature of the coolant in the storage tank. At this time, the cooler can be used to cool the coolant in the storage tank to ensure that the temperature of the coolant flowing from the storage tank into the first pipe 115 is lower, thus cooling the wafer 11. After absorbing heat from the cavity 100, the coolant flowing back to the storage tank in the second pipe 125 has a higher temperature, resulting in a higher temperature of the coolant in the storage tank. At this time, the cooler can be used to cool the coolant in the storage tank to ensure that the temperature of the coolant flowing from the storage tank into the second pipe 125 is lower, thus cooling the cavity 100.

[0051] In some embodiments, the cooling system 105 further includes a first valve (not shown) and a second valve (not shown). The first valve is disposed on the first pipe 115 and connected to a controller. The controller controls the flow rate of the coolant in the first pipe 115 by controlling the opening degree of the first valve. The second valve is disposed on the second pipe 125 and connected to the controller. The controller controls the flow rate of the coolant in the second pipe 125 by controlling the opening degree of the second valve. That is, the controller controls the flow rate of the coolant in the first pipe 115 and the second pipe 125 respectively by controlling the opening degree of the first valve and the second valve.

[0052] In some embodiments, the cooling system 105 further includes a first temperature sensor (not shown) and a second temperature sensor (not shown). The first temperature sensor is located on the base 103 and connected to a controller. The first temperature sensor is used to test the temperature of the base 103 and upload the temperature of the base 103 to the controller. The controller is configured to open a first valve when the temperature of the base 103 is greater than a first threshold temperature; the controller is also configured to close the first valve when the temperature of the base 103 is less than or equal to the first threshold temperature. The second temperature sensor is located on the cavity 100 and connected to the controller. The second temperature sensor is used to test the temperature of the cavity 100 and upload the temperature of the cavity 100 to the controller. The controller is configured to open a second valve when the temperature of the cavity 100 is greater than a second threshold temperature; the controller is configured to close the second valve when the temperature of the cavity 100 is less than or equal to the second threshold temperature.

[0053] The first temperature sensor is used to test the temperature of the base 103. Specifically, the first temperature sensor tests the temperature of the bearing surface 113. Since the bearing surface 113 is in direct contact with the wafer 11, the temperature of the bearing surface 113 tested by the first sensor can reflect the temperature of the wafer 11, so as to control the temperature of the wafer 11 at the first threshold temperature.

[0054] The first threshold temperature can be a specific temperature value or a temperature range, which can be set by the user according to the actual situation.

[0055] Furthermore, when the temperature measured by the first temperature sensor is higher than the first threshold temperature, and the difference is significant, the controller can set the opening of the first valve to be larger. This allows for a higher coolant flow rate in the first pipe 115, resulting in more heat being carried away by the coolant within the first pipe 115 per unit time, thereby improving the cooling effect of the first pipe 115. When the temperature measured by the first sensor is higher than the first threshold temperature, and the difference is small, only a small amount of heat needs to be carried away to maintain the temperature of the wafer 11 at the first threshold temperature. Therefore, the controller can set the opening of the first valve to be smaller in this case.

[0056] The second temperature sensor measures the temperature of the inner wall surface 110 of the cavity 100. The second threshold temperature can be a specific temperature value or a temperature range, which can be set by the user according to the actual situation.

[0057] In some embodiments, the second threshold temperature can be 20°C to 100°C.

[0058] Furthermore, when the temperature measured by the second temperature sensor is higher than the second threshold temperature, and the difference is significant, the opening of the second valve can be set larger by the controller. This allows for a higher coolant flow rate in the second pipe 125, resulting in more heat being carried away by the coolant within the second pipe 125 per unit time, thereby improving the cooling effect of the second pipe 125. Similarly, when the temperature measured by the second sensor is higher than the second threshold temperature, and the difference is small, only a small amount of heat needs to be carried away to maintain the temperature of the inner wall 110 of the cavity 100 at the second threshold temperature. Therefore, the opening of the second valve can be set smaller by the controller in this case.

[0059] In some embodiments, the deposition apparatus further includes a ceramic kit (not shown) located on the sidewall of the cavity 100 for protecting the sidewall of the cavity 100. The ceramic kit may include boron nitride, silicon carbide, or alumina, etc., and has high hardness, wear resistance, and high temperature resistance to protect the sidewall of the cavity 100.

[0060] Figure 2This is another schematic diagram of the deposition apparatus provided in an embodiment of the present disclosure.

[0061] refer to Figure 2 In some embodiments, the deposition apparatus further includes a plasma source assembly 106, which is connected to the cavity 100 and is used to convert gas into plasma. That is, the deposition apparatus can be a plasma chemical vapor deposition apparatus.

[0062] In some embodiments, the plasma source assembly 106 may include at least one of a radio frequency (RF) power supply 116 and a remote plasma source (RPS) controller 126.

[0063] The radio frequency power supply 116 is used to generate a high-frequency alternating electric field to excite the gas, thereby ionizing the gas to form plasma.

[0064] The remote-controlled plasma controller 126 is used to excite gas to form plasma via radio frequency or microwave.

[0065] In some embodiments, the cavity 100 includes an excitation cavity 130 and a deposition cavity 140 that are connected in a vertical direction, and the excitation cavity 130 is located above the deposition cavity 140; an air intake mechanism 101 is provided in the excitation cavity 130 and is connected to the plasma source assembly 106, and a base 103 is provided in the deposition cavity 140.

[0066] The excitation chamber 130 is connected to the plasma source assembly 106, providing an excitation space for the excitation gas to form plasma.

[0067] The deposition chamber 140 is used to provide preparation space for thin film preparation.

[0068] In some embodiments, the deposition apparatus further includes a gas equalization plate (not shown), which is located between the excitation chamber 130 and the deposition chamber 140. The gas equalization plate is provided with a plurality of gas equalization holes that connect the excitation chamber 130 and the deposition chamber 140, so that the plasma in the excitation chamber 130 can reach the surface of the wafer 11 uniformly.

[0069] In some embodiments, the second cooling conduit 1252 is disposed within the sidewall of the deposition chamber 140. The cooling system 105 further includes a third conduit 145 and a third valve. The third conduit 145 is disposed within the sidewall of the excitation chamber 130 and communicates with the cooling source assembly 135. The controller is also used to control the coolant flow rate of the third conduit 145. The third valve is disposed on the third conduit 145 and connected to the controller. The controller is used to control the opening degree of the third valve to control the coolant flow rate within the third conduit 145. That is, the cooling system 105 not only cools the deposition wafer 11 and the sidewall of the deposition chamber 140, but also cools the sidewall of the excitation chamber 130 to prevent the sidewall temperature of the excitation chamber 130 from becoming too high and affecting plasma generation.

[0070] In some embodiments, the third conduit 145 includes a third inflow conduit 1451, a third cooling conduit 1452, and a third outflow conduit 1453 connected in series. The third cooling conduit 1452 is located within the sidewall of the excitation chamber 130. Coolant flows into the third cooling conduit 1452 through the third inflow conduit 1451 to cool the sidewall of the chamber 100, and flows out through the third outflow conduit 1453. The third cooling conduit 1452 is also located between the inner wall surface 110 and the outer wall surface 120. By placing the third cooling conduit 1452 between the inner wall surface 110 and the outer wall surface 120, byproducts generated during thin film preparation can be prevented from depositing on the third cooling conduit 1452, thereby protecting the third cooling conduit 1452.

[0071] In some embodiments, the cooling system 105 may further include a first power pump (not shown), a second power pump (not shown), and a third power pump (not shown). The first power pump is used to power the flow of coolant in the first pipe 115, the second power pump is used to power the flow of coolant in the second pipe 125, and the third power pump is used to power the flow of coolant in the third pipe 145.

[0072] Figure 3 The graphs show the temperature changes of the wafer 11 over time in a deposition apparatus without a cooling system and in a deposition apparatus with a cooling system. Line A illustrates the temperature change of the wafer 11 in the deposition apparatus without the cooling system 105, and line B illustrates the temperature change of the wafer 11 after the cooling system 105 in the deposition apparatus provided in this embodiment is used.

[0073] refer to Figure 2 and Figure 3In a specific example, the deposition equipment is a plasma chemical vapor deposition equipment. When preparing and growing silicon oxide thin films, and using a high-frequency 800W and low-frequency 200W frequency conversion RF power supply, the heat generated by the plasma is concentrated on the surface of the wafer 11, causing the wafer 11 to continuously heat up. Without the cooling system 105, the temperature of the wafer 11 changes linearly, rising from the set 180°C to 200°C within 5 minutes. After using the cooling system 105 provided in this embodiment, the temperature of the wafer 11 can be stabilized at the preset temperature value.

[0074] Those skilled in the art will understand that the above embodiments are specific examples of implementing this disclosure, and in practical applications, various changes in form and detail may be made without departing from the spirit and scope of this disclosure. Any person skilled in the art can make various alterations and modifications without departing from the spirit and scope of this disclosure; therefore, the scope of protection of this disclosure should be determined by the scope defined in the claims.

Claims

1. A deposition apparatus, characterized in that, include: cavity; An air intake mechanism is provided at the top of the cavity. The air intake mechanism has an air intake hole and an air intake pipe connected to the air intake hole. The air intake pipe is connected to the cavity. The air intake hole is used to connect to the air intake pipe that provides gas. An air extraction port, which is connected to the cavity; A base, wherein the base is provided with a support surface for supporting the wafer, and the base is located within the cavity; A wafer heater, disposed within the base, for heating the wafer; A cooling system includes a first pipe, a second pipe, a cooling source assembly, and a controller. At least a portion of the first pipe is disposed within the base, and at least a portion of the second pipe is disposed within the side wall of the cavity. The first pipe and the second pipe are connected to the cooling source assembly. The cooling source assembly provides coolant to the first pipe to cool the wafer, and provides the coolant to the second pipe to cool the cavity. The controller is connected to the cooling source assembly and is used to control the flow rate of the coolant in the first pipe and the second pipe.

2. The deposition apparatus according to claim 1, characterized in that, The first pipe includes a first inflow pipe, a first cooling pipe, and a first outflow pipe that are connected to each other. The first cooling pipe is located inside the base. The coolant flows into the first cooling pipe through the first inflow pipe to cool the base and flows out through the first outflow pipe. The first cooling pipe is spiral-shaped.

3. The deposition apparatus according to claim 2, characterized in that, The first cooling conduit has at least a partial orthographic projection on the support surface that extends beyond the outer edge of the orthographic projection of the wafer heater on the support surface.

4. The deposition apparatus according to claim 2, characterized in that, The second pipe includes a second inflow pipe, a second cooling pipe, and a second outflow pipe that are connected to each other. The second cooling pipe is located inside the side wall of the cavity. The coolant flows into the second cooling pipe through the second inflow pipe to cool the side wall of the cavity and flows out through the second outflow pipe. The cavity includes an inner wall surface and an outer wall surface, and the second cooling pipe is located between the inner wall surface and the outer wall surface.

5. The deposition apparatus according to claim 1, characterized in that, The cooling source assembly includes: A storage tank for storing the coolant, wherein the first pipe and the second pipe are respectively connected to the storage tank; A cooler for cooling the coolant in the storage tank.

6. The deposition apparatus according to claim 1, characterized in that, The cooling system also includes: A first valve is disposed on the first pipe and connected to the controller, the controller being configured to control the opening degree of the first valve to control the flow rate of the coolant in the first pipe; A second valve is disposed on the second pipe and connected to the controller, which is configured to control the opening degree of the second valve to control the flow rate of the coolant in the second pipe.

7. The deposition apparatus according to claim 6, characterized in that, The cooling system also includes: A first temperature sensor is located on the base and connected to the controller. The first temperature sensor is used to test the temperature of the base and upload the temperature of the base to the controller. The controller is configured to open the first valve when the temperature of the base is greater than a first threshold temperature; the controller is also configured to close the first valve when the temperature of the base is less than or equal to the first threshold temperature. A second temperature sensor is located on the cavity and connected to the controller. The second temperature sensor is used to test the temperature of the cavity and upload the temperature of the cavity to the controller. The controller is configured to open the second valve when the temperature of the cavity is greater than a second threshold temperature; the controller is also configured to close the second valve when the temperature of the cavity is less than or equal to the second threshold temperature.

8. The deposition apparatus according to claim 4, characterized in that, The deposition apparatus also includes: A plasma source assembly, connected to the cavity, is used to convert gas into plasma.

9. The deposition apparatus according to claim 8, characterized in that, The cavity includes an excitation cavity and a deposition cavity that are connected in a vertical direction, with the excitation cavity located above the deposition cavity; the excitation cavity is provided with the air intake mechanism and connected to the plasma source assembly, and the base is disposed in the deposition cavity.

10. The deposition apparatus according to claim 9, characterized in that, The second cooling pipe is disposed within the side wall of the deposition chamber, and the cooling system further includes: The third pipe is disposed inside the side wall of the excitation chamber and is connected to the cooling source assembly. The controller is also used to control the flow rate of the coolant in the third pipe. A third valve is disposed on the third pipe and connected to the controller, which is configured to control the opening degree of the third valve to control the flow rate of the coolant in the third pipe.

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