Heating table and deposition equipment
By combining a dual heating pipe system and a temperature control mechanism, the high manufacturing cost of the heating stage and the temperature control problem were solved, thereby achieving uniformity of wafer temperature and improved reliability of thin films.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- JIANGSU SHOUXIN SEMICON TECH CO LTD
- Filing Date
- 2025-04-27
- Publication Date
- 2026-04-21
AI Technical Summary
The heating stage in the related technology has a high manufacturing cost and is difficult to control the wafer temperature effectively, resulting in uneven film performance.
A dual heating pipe system is adopted, which heats the center and edge areas of the wafer through the first heating pipe and the second heating pipe respectively, and uses a temperature control mechanism to adjust the temperature and flow rate of the heat transfer fluid in real time to achieve zoned temperature control and avoid the need to set up an additional cooling system.
This reduces the manufacturing cost of the heating stage and improves the temperature uniformity and reliability of the thin film on the wafer surface, thereby enhancing the film preparation effect.
Smart Images
Figure CN224148170U_ABST
Abstract
Description
Technical Field
[0001] This disclosure relates to the field of semiconductor manufacturing, and in particular to a heating stage and deposition equipment. Background Technology
[0002] Deposition is a common film-forming process in semiconductor manufacturing. Deposition processes mainly include chemical vapor deposition (CVD), physical vapor deposition (PVD), and atomic layer deposition (ALD). Taking chemical vapor deposition as an example, it is a process in which reactants undergo a chemical reaction under gaseous conditions to generate a solid material that is deposited on the wafer surface to form a thin film. This process is achieved using deposition equipment.
[0003] A heating stage in a deposition apparatus is used to support the wafer and provide the reaction temperature for preparing thin films on the wafer. However, the manufacturing cost of heating stages in related technologies is relatively high. Utility Model Content
[0004] This disclosure provides a heating stage and deposition apparatus, which can at least reduce the manufacturing cost of the heating stage and improve the reliability of thin film preparation.
[0005] According to some embodiments of this disclosure, one aspect of this disclosure provides a heating stage, the heating stage comprising: a base, the base having a bearing surface for supporting a wafer; a first heating pipe, the first heating pipe including a first heating section, a first inflow pipe, and a first outflow pipe, the first heating section being disposed within the base, the heat transfer fluid in the first heating pipe flowing into the first heating section through the first inflow pipe to heat the base, and flowing out through the first outflow pipe; and a second heating pipe, the second heating pipe including a second heating section, a second inflow pipe, and a second outflow pipe, the second heating section being disposed within the base, the second heating... The heat transfer fluid in the pipe flows into the second heating section through the second inlet pipe to heat the base, and flows out through the second outlet pipe, wherein the second heating section is arranged around the periphery of the first heating section; a first temperature control mechanism is connected to the first heating pipe and is used to provide the heat transfer fluid to the first heating pipe and control the temperature and flow rate of the heat transfer fluid in the first heating pipe; a second temperature control mechanism is connected to the second heating pipe and is used to provide the heat transfer fluid to the second heating pipe and control the temperature and flow rate of the heat transfer fluid in the second heating pipe.
[0006] In some embodiments, the bearing surface includes a central area and an edge area surrounding the central area, the first heating segment is disposed corresponding to the central area, and the second heating segment is disposed corresponding to the edge area; the heating platform further includes: a first temperature sensor connected to the first temperature control mechanism, the first temperature sensor being used to test the temperature of the central area and upload the temperature of the central area to the first temperature control mechanism; and a second temperature sensor connected to the second temperature control mechanism, the second temperature sensor being used to test the temperature of the edge area and upload the temperature of the edge area to the second temperature control mechanism.
[0007] In some embodiments, the heating platform further includes a heat insulation channel located between the first heating pipe and the second heating pipe.
[0008] In some embodiments, the heating table further includes a heat insulation element located within the heat insulation channel.
[0009] In some embodiments, the heat transfer fluid is a perfluoropolyether fluorine liquid.
[0010] In some embodiments, the first temperature control mechanism includes: a first storage tank for storing the heat transfer fluid, with a first inflow pipe and a second outflow pipe respectively connected to the first storage tank; a first temperature controller connected to the storage tank for controlling the temperature of the heat transfer fluid in the first storage tank; a first valve disposed on the first inflow pipe; and a first controller connected to the first temperature controller for controlling the temperature of the heat transfer fluid in the first storage tank, and connected to the first valve for controlling the opening degree of the first valve to control the heat transfer fluid in the first heating pipe. The flow rate; the second temperature control mechanism includes: a second storage tank for storing the heat transfer fluid, a second inflow pipe and a second outflow pipe respectively connected to the second storage tank; a second temperature controller connected to the storage tank for controlling the temperature of the heat transfer fluid in the second storage tank; a second valve disposed on the second inflow pipe; and a second controller connected to the second temperature controller for controlling the temperature of the heat transfer fluid in the second storage tank, and connected to the second valve for controlling the opening degree of the second valve to control the flow rate of the heat transfer fluid in the second heating pipe.
[0011] In some embodiments, the first controller and the second controller are integrated into a single control mechanism.
[0012] In some embodiments, the heating platform further includes: at least one third heating pipe, the third heating pipe including a third heating section, a third inlet pipe and a third outlet pipe, the third heating section being disposed within the base, the heat transfer fluid in the third heating pipe flowing into the third heating section through the third inlet pipe to heat the base, and flowing out through the third outlet pipe; at least one third temperature control mechanism, the third temperature control mechanism being connected to the third heating pipe, for providing the heat transfer fluid to the third heating pipe and controlling the temperature and flow rate of the heat transfer fluid in the third heating pipe; wherein, the third heating section is located between the first heating section and the second heating section, and is disposed around the periphery of the first heating section.
[0013] In some embodiments, the first heating section, the second heating section, and the third heating section are all spiral-shaped.
[0014] According to some embodiments of this disclosure, one aspect of this disclosure provides a deposition apparatus, the deposition apparatus comprising: a cavity; an air intake mechanism disposed at the top of the cavity, the air intake mechanism having an air intake hole and an air intake pipe communicating with the air intake hole, the air intake pipe communicating with the cavity, the air intake hole being used to connect to an air intake pipe for providing gas; an air extraction port communicating with the cavity; and a heating stage as described in any of the above embodiments, the heating stage being used to place a wafer.
[0015] The technical solutions provided in this disclosure have at least the following advantages:
[0016] The substrate is heated using the heat transfer fluid in the first heating pipe and the heat transfer fluid in the second heating pipe to heat the wafer on the substrate. When the wafer temperature on the substrate exceeds a preset temperature, the temperature of the heat transfer fluid in the first heating pipe can be lowered by a first temperature control mechanism, and the temperature of the heat transfer fluid in the second heating pipe can be lowered by a second temperature control mechanism. This allows the lower-temperature heat transfer fluid to carry away excess heat from the wafer on the substrate, thus controlling the wafer temperature at the preset temperature. In other words, this embodiment of the invention utilizes the heat transfer fluids in the first and second heating pipes to heat the wafer, eliminating the need for an additional cooling system and reducing the manufacturing cost of the heating stage.
[0017] In addition, the second heating section of the second heating pipe is arranged around the first heating section of the first heating pipe. The first heating section can be used to heat the central region of the wafer, and the second heating section located around the first heating section can be used to heat the edge region of the wafer. That is, the embodiments of this disclosure can realize the partitioned heating and temperature control of the wafer through the first heating section and the second heating section, which is beneficial to make the temperature of the central region and the edge region of the wafer uniform. It can avoid the performance of the prepared film due to the large temperature difference between the central region and the edge region of the wafer, thereby improving the reliability of the film prepared on the wafer. Attached Figure Description
[0018] One or more embodiments are illustrated by way of example with corresponding pictures in the accompanying drawings. These illustrations do not constitute a limitation on the embodiments. Unless otherwise stated, the pictures in the accompanying drawings do not constitute a limitation on scale. In order to more clearly illustrate the technical solutions in the embodiments of this disclosure or the conventional technology, the drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this disclosure. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0019] Figure 1 This is a schematic diagram of a heating stage supporting a wafer provided in an embodiment of the present disclosure;
[0020] Figure 2 A top view of the bearing surface in the heating table provided in an embodiment of this disclosure;
[0021] Figure 3 A top view of the first heating section, the second heating section, and the third heating section in the heating table provided for the implementation of this disclosure;
[0022] Figure 4 This is a schematic diagram illustrating the temperature change of the wafer when the heating stage provided in this embodiment heats the wafer;
[0023] Figure 5 This is a schematic diagram of a deposition apparatus provided in an embodiment of the present disclosure. Detailed Implementation
[0024] Heating stages used in deposition equipment in related technologies typically include a base and a wafer heater. The wafer heater is located within the base and is used to heat the wafer placed on the base. However, during operation, some gases release heat when reacting on the wafer surface, causing the wafer temperature to exceed the preset temperature. Alternatively, if the gas is plasma, the plasma carries heat and adheres to the wafer, causing the wafer temperature to exceed the preset temperature. In these cases, even if the wafer heater is turned off, it is difficult to reduce the wafer temperature back to the preset temperature. To avoid this, heating stages in related technologies are equipped with an additional cooling system to cool the wafer and control its temperature within the preset range. However, the complex structure of such heating stages results in high manufacturing costs.
[0025] Therefore, the manufacturing cost of the heating stage in the relevant technology is relatively high.
[0026] In the heating stage provided in this embodiment, a heat transfer fluid in a first heating pipe and a heat transfer fluid in a second heating pipe are used to heat a substrate to heat a wafer on the substrate. When the temperature of the wafer on the substrate is higher than a preset temperature, the temperature of the heat transfer fluid in the first heating pipe can be lowered by a first temperature control mechanism, and the temperature of the heat transfer fluid in the second heating pipe can be lowered by a second temperature control mechanism. This allows the lower-temperature heat transfer fluid to carry away excess heat from the wafer on the substrate, thus controlling the wafer temperature at the preset temperature. In other words, this embodiment utilizes the heat transfer fluids in the first and second heating pipes to heat the wafer, eliminating the need for an additional cooling system and reducing the manufacturing cost of the heating stage.
[0027] In addition, the second heating section of the second heating pipe is arranged around the first heating section of the first heating pipe. The first heating section can be used to heat the central region of the wafer, and the second heating section located around the first heating section can be used to heat the edge region of the wafer. That is, the embodiments of this disclosure can realize the partitioned heating and temperature control of the wafer through the first heating section and the second heating section, which is beneficial to make the temperature of the central region and the edge region of the wafer uniform. It can avoid the performance of the prepared film due to the large temperature difference between the central region and the edge region of the wafer, thereby improving the reliability of the film prepared on the wafer.
[0028] In the description of the embodiments of this disclosure, technical terms such as "first" and "second" are used only to distinguish different objects and should not be construed as indicating or implying relative importance or implicitly specifying the number, specific order, or primary or secondary relationship of the indicated technical features. In the description of the embodiments of this disclosure, "a plurality of" means two or more, unless otherwise explicitly defined.
[0029] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this disclosure. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.
[0030] In the description of the embodiments of this disclosure, the term "and / or" is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent three cases: A exists, A and B exist simultaneously, and B exists. Additionally, the character " / " in this document generally indicates that the preceding and following related objects have an "or" relationship.
[0031] In the description of the embodiments of this disclosure, the term "multiple" refers to two or more (including two), similarly, "multiple groups" refers to two or more (including two groups), and "multiple pieces" refers to two or more (including two pieces).
[0032] In the description of the embodiments of this disclosure, the technical terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," and "circumferential" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing the embodiments of this disclosure and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the embodiments of this disclosure.
[0033] In the description of the embodiments of this disclosure, unless otherwise expressly specified and limited, technical terms such as "installation," "connection," "joining," and "fixing" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in the embodiments of this disclosure according to the specific circumstances.
[0034] In the accompanying drawings corresponding to the embodiments of this disclosure, the thickness and area of the layers are enlarged for better understanding and ease of description. When describing a component (such as a layer, film, region, or substrate) on or on the surface of another component, the component may be "directly" located on the surface of the other component, or there may be a third component between the two components. Conversely, when describing a component on the surface of another component, or when another component is formed or disposed on the surface of a component, it indicates that there is no third component between the two components. Furthermore, when describing a component as being "generally" formed on another component, it means that the component is not formed on the entire surface (or front surface) of the other component, nor is it formed on a portion of the edge of the entire surface.
[0035] In the description of embodiments of this disclosure, when a component "includes" another component, other components are not excluded unless otherwise stated, and may be further included. Furthermore, when a component such as a layer, film, region, or plate is referred to as being "on / located" on another component, it can be "directly on" the other component (i.e., located on the surface of the other component with no other components between them), or another component may be present therein. Additionally, when a component such as a layer, film, region, or plate is "directly located" on another component, or when a component such as a layer, film, region, or plate is located on the surface of another component, it indicates that no other components are located therein.
[0036] The embodiments of this disclosure will now be described in detail with reference to the accompanying drawings. However, those skilled in the art will understand that many technical details have been provided in the embodiments of this disclosure to facilitate a better understanding of the disclosure. However, the technical solutions claimed in this disclosure can be implemented even without these technical details and various variations and modifications based on the following embodiments.
[0037] Figure 1 This is a schematic diagram of a heating stage supporting a wafer provided in an embodiment of the present disclosure; Figure 2 A top view of the bearing surface in the heating table provided in an embodiment of this disclosure; Figure 3 A top view of the first heating section, the second heating section, and the third heating section in the heating table provided for the implementation of this disclosure. Figure 1 The arrows in the diagram indicate the flow direction of the heat transfer fluid in the corresponding heating pipe; Figure 2 The dashed lines are for illustrative purposes only and do not represent different areas on the bearing surface. In actual applications, these areas do not exist on the bearing surface. Figure 2 The dashed line shown.
[0038] Reference Figures 1 to 3The heating platform 10 includes: a base 100, a first heating pipe 101, a second heating pipe 102, a first temperature control mechanism 103, and a second temperature control mechanism 104. The base 100 is provided with a bearing surface 110 for supporting the wafer 11; the first heating pipe 101 includes a first heating section 1011, a first inflow pipe 1012, and a first outflow pipe 1013. The first heating section 1011 is disposed within the base 100. The heat transfer fluid in the first heating pipe 101 flows into the first heating section 1011 through the first inflow pipe 1012 to heat the base 100, and flows out through the first outflow pipe 1013; the second heating pipe 102 includes a second heating section 1021, a second inflow pipe 1022, and a second outflow pipe 1023. The second heating section 1021 is disposed within the base 100. The heat transfer fluid in 02 flows into the second heating section 1021 through the second inflow pipe 1022 to heat the base 100, and flows out through the second outflow pipe 1023. The second heating section 1021 is arranged around the periphery of the first heating section 1011. The first temperature control mechanism 103 is connected to the first heating pipe 101 and is used to provide heat transfer fluid to the first heating pipe 101 and control the temperature and flow rate of the heat transfer fluid in the first heating pipe 101. The second temperature control mechanism 104 is connected to the second heating pipe 102 and is used to provide heat transfer fluid to the second heating pipe 102 and control the temperature and flow rate of the heat transfer fluid in the second heating pipe 102.
[0039] The heating stage 10 is used to hold the wafer 11 and provide the required temperature for the fabrication of thin films on the wafer 11.
[0040] The base 100 inside the heating stage 10 is used to support the wafer 11, and the base 100 has a support surface 110 for supporting the wafer 11.
[0041] The base 100 is used to place the wafer 11. The bearing surface 110 of the base 100 contacts the wafer 11 and provides support for the wafer 11.
[0042] The first heating conduit 101 is used to heat the base 100 to heat the wafer 11 on the base 100. Specifically, the first heating conduit 101 heats the bearing surface 110, and the bearing surface 110 transfers heat to the wafer 11, so that the wafer 11 is heated by the first heating conduit 101.
[0043] In addition, the first heating pipe 101 is not only used to heat the wafer 11, but also, when the temperature of the wafer 11 exceeds the preset temperature, the heat transfer fluid inside the first heating pipe 101 can set the temperature to a lower level, allowing the heat transfer fluid in the first heating pipe 101 to remove excess heat from the wafer 11, thus keeping the temperature of the wafer 11 within the preset temperature range. In other words, the first heating pipe 101 has both heating and cooling functions, which improves the practicality of the heating stage 10. The preset temperature can be a specific temperature value or a temperature range, which can be set by the user according to actual needs.
[0044] The second heating pipe 102 is used to heat the base 100 to heat the wafer 11 on the base 100. Specifically, the second heating pipe 102 heats the bearing surface 110, and the bearing surface 110 transfers heat to the wafer 11, so that the wafer 11 is heated by the second heating pipe 102.
[0045] In addition, the second heating pipe 102 is not only used to heat the wafer 11, but also allows the heat transfer fluid inside the second heating pipe 102 to set a lower temperature when the temperature of the wafer 11 exceeds the preset temperature. This allows the heat transfer fluid to remove excess heat from the wafer 11, thus keeping the temperature of the wafer 11 within the preset temperature range. In other words, the second heating pipe 102 has both heating and cooling functions, enhancing the practicality of the heating stage 10. The preset temperature can be a specific temperature value or a temperature range, which can be set by the user according to actual needs.
[0046] The second heating section 1021 of the second heating pipe 102 is arranged around the first heating section 1011 of the first heating pipe 101. The first heating section 1011 can be used to heat the central region of the wafer 11, and the second heating section 1021 located around the first heating section 1011 can be used to heat the edge region of the wafer 11. The first heating section 1011 and the second heating section 1021 can be used to achieve zoned heating and temperature control of the wafer 11, which is beneficial to make the temperature of the central region and the edge region of the wafer 11 uniform. It can avoid the performance of the prepared thin film due to the large temperature difference between the central region and the edge region of the wafer 11, thereby improving the reliability of the thin film prepared on the wafer 11.
[0047] Wafer 11 includes a central region and an edge region surrounding the central region.
[0048] When placing wafer 11, the central region of wafer 11 is placed in relation to the central region 120 of bearing surface 110.
[0049] In some embodiments, the carrier surface 110 includes a central region 120 and an edge region 130 surrounding the central region 120. A first heating segment 1011 is disposed corresponding to the central region 120, and a second heating segment 1021 is disposed corresponding to the edge region 130. The first heating segment 1011 heats the central region 120 of the carrier surface 110, thereby heating the central region of the wafer 11. The second heating segment 1021 heats the edge region 130 of the carrier surface 110, thereby heating the edge region of the wafer 11.
[0050] The heating stage 10 also includes a first temperature sensor (not shown) and a second temperature sensor (not shown). The first temperature sensor is connected to a first temperature control mechanism 103 and is used to test the temperature of the central region 120 and upload the temperature of the central region 120 to the first temperature control mechanism 103. The second temperature sensor is connected to a second temperature control mechanism 104 and is used to test the temperature of the edge region 130 and upload the temperature of the edge region 130 to the second temperature control mechanism 104. Since the bearing surface 110 is in direct contact with the wafer 11, it can be assumed that the temperature of the central region 120 of the bearing surface 110 is equal to the temperature of the central region of the wafer 11, and the temperature of the edge region 130 of the bearing surface 110 is equal to the temperature of the edge region of the wafer 11. That is, the first temperature sensor can test the temperature of the central region of the wafer 11 by testing the temperature of the central region 120 of the bearing surface 110, and the second sensor can test the temperature of the edge region of the wafer 11 by testing the temperature of the edge region 130 of the bearing surface 110.
[0051] With this configuration, the first temperature control mechanism 103 can monitor the temperature of the central region of the wafer 11 in real time using a first temperature sensor. When the temperature of the central region of the wafer 11 is lower than a preset temperature, the first temperature control mechanism 103 increases the temperature of the heat transfer fluid in the first heating pipe 101 to heat the central region of the wafer 11; when the temperature of the central region of the wafer 11 is higher than the preset temperature, the first temperature control mechanism 103 decreases the temperature of the heat transfer fluid in the first heating pipe 101 to cool the central region of the wafer 11. Similarly, the second temperature control mechanism 104 can monitor the temperature of the edge region of the wafer 11 in real time using a second temperature sensor. When the temperature of the edge region of the wafer 11 is lower than a preset temperature, the second temperature control mechanism 104 increases the temperature of the heat transfer fluid in the second heating pipe 102 to heat the edge region of the wafer 11; when the temperature of the edge region of the wafer 11 is higher than the preset temperature, the second temperature control mechanism 104 decreases the temperature of the heat transfer fluid in the second heating pipe 102 to cool the edge region of the wafer 11.
[0052] In some embodiments, the first temperature control mechanism 103 includes a first storage tank (not shown), a first temperature controller (not shown), a first valve (not shown), and a first controller (not shown). The first storage tank is used to store heat transfer fluid, and a first inflow pipe 1012 and a second outflow pipe 1023 are respectively connected to the first storage tank; the first temperature controller is connected to the storage tank and is used to control the temperature of the heat transfer fluid in the first storage tank; the first valve is disposed on the first inflow pipe 1012; the first controller is connected to the first temperature controller and is used to control the temperature of the heat transfer fluid in the first storage tank, and the first controller is connected to the first valve and is used to control the opening degree of the first valve to control the flow rate of the heat transfer fluid in the first heating pipe 101.
[0053] The first temperature controller regulates the temperature of the heat transfer fluid in the first storage tank. When it is necessary to heat the wafer 11, the first temperature controller can heat the heat transfer fluid in the first storage tank to increase its temperature. This allows the higher-temperature heat transfer fluid to transfer heat to the wafer 11 through the first heating pipe 101, thus heating the wafer 11. When the temperature of the wafer 11 is too high and it is necessary to lower its temperature, the first temperature controller can cool the heat transfer fluid in the first storage tank to lower its temperature. This allows the lower-temperature heat transfer fluid to absorb excess heat from the wafer 11 through the first heating pipe 101, thus cooling the wafer 11.
[0054] The first controller can also control the flow rate of the heat transfer fluid in the first heating pipe 101 by adjusting the opening degree of the first valve. Specifically, setting a larger opening degree of the first valve results in a larger flow rate of the heat transfer fluid in the first heating pipe 101, leading to better heating or cooling of the wafer 11 per unit time. When the temperature difference between the wafer 11 and the preset temperature is small, the opening degree of the first valve can be set smaller.
[0055] In some embodiments, the second temperature control mechanism 104 includes a second storage tank (not shown), a second temperature controller (not shown), a second valve (not shown), and a second controller (not shown). The second storage tank is used to store heat transfer fluid, and the second inflow pipe 1022 and the second outflow pipe 1023 are respectively connected to the second storage tank; the second temperature controller is connected to the storage tank and is used to control the temperature of the heat transfer fluid in the second storage tank; the second valve is disposed on the second inflow pipe 1022; the second controller is connected to the second temperature controller and is used to control the temperature of the heat transfer fluid in the second storage tank, and the second controller is connected to the second valve and is used to control the opening degree of the second valve to control the flow rate of the heat transfer fluid in the second heating pipe 102.
[0056] The second temperature controller regulates the temperature of the heat transfer fluid in the second storage tank. When heating of wafer 11 is required, the second temperature controller heats the heat transfer fluid in the second storage tank to increase its temperature. This allows the higher-temperature heat transfer fluid to transfer heat to wafer 11 via the second heating pipe 102, thus heating wafer 11. When the temperature of wafer 11 is too high and needs to be lowered, the second temperature controller cools the heat transfer fluid in the second storage tank to reduce its temperature. This allows the lower-temperature heat transfer fluid to absorb excess heat from wafer 11 via the second heating pipe 102, thus cooling wafer 11.
[0057] The second controller can also control the flow rate of the heat transfer fluid in the second heating pipe 102 by adjusting the opening degree of the second valve. Specifically, setting a larger opening degree of the second valve results in a larger flow rate of the heat transfer fluid in the second heating pipe 102, leading to better heating or cooling of the wafer 11 per unit time. When the temperature difference between the wafer 11 and the preset temperature is small, the opening degree of the second valve can be set smaller.
[0058] In some embodiments, the first controller and the second controller are integrated into a single control mechanism. This allows the operator to control the temperature and flow rate of the heat transfer fluid within the first heating pipe 101 and the second heating pipe 102 through a single control mechanism, thereby improving the practicality of the heating platform 10.
[0059] In some embodiments, the heating platform 10 further includes a heat insulation channel (not shown) located between the first heating pipe 101 and the second heating pipe 102. Thus, the air within the heat insulation channel can insulate the first heating pipe 101 and the second heating pipe 102, preventing interference between the heat transfer fluid in the first heating pipe 101 and the heat transfer fluid in the second heating pipe 102.
[0060] In some embodiments, the heating platform 10 further includes a heat insulation element (not shown) located within a heat insulation channel. This can further enhance the heat insulation effect between the first heating pipe 101 and the second heating pipe 102.
[0061] In some embodiments, the heat transfer fluid can be a perfluoropolyether fluorine liquid. Perfluoropolyether fluorine liquid is also known as Galden liquid. Galden liquid has a boiling point as high as 270°C, which can heat the temperature of wafer 11 to 270°C, meeting most of the temperature requirements for preparing thin films on wafer 11, and improving the practicality of heating stage 10.
[0062] In some embodiments, the thin film fabrication speed in the central region of the wafer 11 is different from that in the edge region of the wafer 11 due to factors such as the airflow distribution within the deposition apparatus where the heating stage 10 is located. Furthermore, the temperature of the wafer 11 affects the thin film fabrication rate on the wafer 11. In this case, the temperature of the heat transfer fluid in the first heating pipe 101 and the temperature of the heat transfer fluid in the second heating pipe 102 can be set differently by the first temperature control mechanism 103 and the second temperature control mechanism 104. This is to counteract the influence of factors that cause the thin film fabrication rate in the central and edge regions by controlling the temperature difference between the central and edge regions of the wafer 11.
[0063] Figure 4 This is a schematic diagram illustrating the temperature change of the wafer during heating by the heating stage provided in this embodiment of the present disclosure. Specifically, Figure 4 This is a schematic diagram of the temperature change of wafer 11 when heated by the heating stage 10 provided in this embodiment of the present disclosure. Line A shows the temperature change of the central region of wafer 11 when the first heating pipe 101 is used to heat the central region of wafer 11; line B shows the temperature change of the edge region of wafer 11 when the second heating pipe 102 is used to heat the edge region of wafer 11.
[0064] refer to Figure 1 and Figure 4 In a specific example, the preset temperature for the central region of wafer 11 is 175℃~185℃, and the preset temperature for the edge region of wafer 11 is 165℃~175℃. Figure 3 The results show the heating and temperature control of the central region and the edge region using the first heating pipe 101 and the second heating pipe 102 provided in this embodiment. It can be seen that using the first heating pipe 101 provided in this embodiment can keep the temperature of the central region of the wafer 11 within a preset range, and using the second heating pipe 102 can keep the temperature of the edge region 130 of the wafer 11 within a preset range.
[0065] In some embodiments, the heating platform 10 further includes at least one third heating pipe 105 and at least one third temperature control mechanism 106. The third heating pipe 105 includes a third heating section 1051, a third inflow pipe 1052, and a third outflow pipe 1053. The third heating section 1051 is disposed within the base 100. The heat transfer fluid in the third heating pipe 105 flows into the third heating section 1051 through the third inflow pipe 1052 to heat the base 100 and flows out through the third outflow pipe 1053. The third temperature control mechanism 106 is connected to the third heating pipe 105 and is used to provide heat transfer fluid to the third heating pipe 105 and control the temperature and flow rate of the heat transfer fluid in the third heating pipe 105. The third heating section 1051 is located between the first heating section 1011 and the second heating section 1021 and is disposed around the periphery of the first heating section 1011.
[0066] It should be noted that, Figure 1 The illustration only shows one third heating pipe 105, but in reality, there can be two or more third heating pipes 105. When there are multiple third heating pipes, the third heating sections of the multiple third heating pipes are distributed along the direction from the center area to the edge area. In addition, the number of third heating pipes 105 is the same as the number of third temperature control mechanisms 106, and each third temperature control mechanism 106 controls the temperature and flow rate of the heat transfer fluid in one third heating pipe 105.
[0067] The wafer 11 may further include a transition region located between the central region and the edge region, and the bearing surface 110 may further include a transition region 140 located between the central region 120 and the edge region 130. The third heating section 1051 of the third heating pipe 105 is located between the first heating section 1011 and the second heating section 1021. The third heating section 1051 of the third heating pipe 105 can heat the transition region 140 of the bearing surface 110, thereby heating the transition region of the wafer 11. Thus, the central region, transition region, and edge region of the wafer 11 can be heated and their temperatures controlled by the first heating pipe 101, the third heating pipe 105, and the second heating pipe 102, respectively. This helps to ensure uniform temperature across the central region, transition region, and edge region of the wafer 11, avoiding the impact of large temperature differences between these regions on the performance of the prepared thin film, thereby improving the reliability of thin film preparation on the wafer 11.
[0068] It is understood that in other embodiments, the wafer may not include a transition region, the bearing surface may not include a transition region, and the heating stage may not include a third heating pipe, but only a first heating pipe and a second heating pipe.
[0069] In some embodiments, the third temperature control mechanism 106 may include a third storage tank (not shown), a third temperature controller (not shown), a third valve (not shown), and a third controller (not shown). The third storage tank is used to store heat transfer fluid, and the third inflow pipe 1052 and the second outflow pipe 1023 are respectively connected to the third storage tank; the third temperature controller is connected to the third storage tank and is used to control the temperature of the heat transfer fluid in the third storage tank; the third valve is disposed on the third inflow pipe 1052; the third controller is connected to the third temperature controller and is used to control the temperature of the heat transfer fluid in the third storage tank, and the third controller is connected to the third valve and is used to control the opening degree of the third valve to control the flow rate of the heat transfer fluid in the third heating pipe 105.
[0070] The third temperature controller regulates the temperature of the heat transfer fluid in the third reservoir. When heating is required for the transition region of wafer 11, the third temperature controller heats the heat transfer fluid in the third reservoir to increase its temperature. This allows the higher-temperature heat transfer fluid to transfer heat to wafer 11 via the third heating pipe 105, thus heating the transition region of wafer 11. When the temperature of the transition region of wafer 11 is too high and needs to be lowered, the third temperature controller cools the heat transfer fluid in the third reservoir to reduce its temperature. This allows the cooled heat transfer fluid to absorb excess heat from the transition region of wafer 11 via the third heating pipe 105, thus cooling the transition region of wafer 11.
[0071] The third controller can also control the flow rate of the heat transfer fluid in the third heating pipe 105 by adjusting the opening of the third valve. Specifically, a larger opening of the third valve results in a larger flow rate of the heat transfer fluid in the third heating pipe 105, leading to better heating or cooling of the wafer 11 per unit time. When the temperature difference between the transition region of the wafer 11 and the preset temperature is small, the opening of the third valve can be set smaller.
[0072] In some embodiments, the heating platform 10 may further include a first power pump (not shown), a second power pump (not shown), and a third power pump (not shown). The first power pump is used to provide power for the flow of heat transfer fluid in the first heating pipe 101, the second power pump is used to provide power for the flow of heat transfer fluid in the second heating pipe 102, and the third power pump is used to provide power for the flow of heat transfer fluid in the third heating pipe 105.
[0073] In some embodiments, the first heating section 1011, the second heating section 1021, and the third heating section 1051 are all spiral-shaped. This increases the path length of the first heating section 1011, the second heating section 1021, and the third heating section 1051 per unit area, thereby improving the heating or cooling effect of the first heating section 1011, the second heating section 1021, and the third heating section 1051.
[0074] In the aforementioned heating stage 10, the heat transfer fluid in the first heating pipe 101 and the heat transfer fluid in the second heating pipe 102 can not only heat the wafer 11 but also cool it down, keeping the temperature of the wafer 11 at a preset temperature. This eliminates the need for an additional cooling system, reducing the manufacturing cost of the heating stage 10. Furthermore, the first heating section 1011 and the second heating section 1021 can achieve zoned heating and temperature control of the wafer 11, ensuring uniform temperature between the central and edge regions. This prevents significant temperature differences between the central and edge regions from affecting the performance of the prepared thin film, thereby improving the reliability of the thin film preparation on the wafer 11.
[0075] Accordingly, another embodiment of this disclosure also provides a deposition apparatus having the heating stage of any of the above embodiments. The deposition apparatus provided by another embodiment of this disclosure will be described below with reference to the accompanying drawings. For parts that are the same as or corresponding to the previous embodiment, please refer to the corresponding descriptions of the foregoing embodiments; detailed descriptions will not be repeated below.
[0076] Figure 5 This is a schematic diagram of a deposition apparatus provided in an embodiment of the present disclosure.
[0077] Reference Figure 1 and Figure 5 The deposition apparatus 20 includes: a cavity 200, an air intake mechanism 201, an air extraction port 202, and a heating stage 10 as described in any of the above embodiments. The air intake mechanism 201 is disposed on the top of the cavity 200 and has an air intake hole 211 and an air intake pipe connected to the air intake hole 211. The air intake pipe is connected to the cavity 200, and the air intake hole is used to connect to the air intake pipe that provides gas. The air extraction port 202 is connected to the cavity 200. The heating stage 10 is used to place the wafer 11.
[0078] The deposition equipment 20 is used to prepare thin films by performing CVD or ALD reactions. CVD includes atmospheric pressure chemical vapor deposition (APCVD), low pressure chemical vapor deposition (LPCVD), ultra-high vacuum chemical vapor deposition (UHVCVD), metal-organic chemical vapor deposition (MOCVD), and plasma-enhanced chemical vapor deposition (PECVD), etc.
[0079] Chamber 200 provides a reaction environment for CVD or ALD reactions.
[0080] The gas inlet mechanism 201 is used to supply gas to the deposition apparatus 20. The gas can be at least one of a reaction gas, a cleaning gas, or a carrier gas.
[0081] The exhaust port 202 is used to remove byproducts and waste gas from the reaction inside the chamber 200.
[0082] In some embodiments, the deposition apparatus 20 may further include at least one of a radio frequency (RF) power supply 203 and a remote plasma source (RPS) controller 204.
[0083] The radio frequency power supply 203 is used to generate a high-frequency alternating electric field to excite the gas, causing the gas to ionize and form plasma.
[0084] The remote plasma controller 204 is used to excite gas to form plasma via radio frequency or microwave.
[0085] In some embodiments, the deposition apparatus 20 further includes a ceramic kit (not shown) located on the sidewall of the cavity 200 to protect the sidewall of the cavity 200. The ceramic kit may include boron nitride, silicon carbide, or alumina, etc., and has high hardness, wear resistance, and high temperature resistance to protect the sidewall of the cavity 200.
[0086] Those skilled in the art will understand that the above embodiments are specific examples of implementing this disclosure, and in practical applications, various changes in form and detail may be made without departing from the spirit and scope of this disclosure. Any person skilled in the art can make various alterations and modifications without departing from the spirit and scope of this disclosure; therefore, the scope of protection of this disclosure should be determined by the scope defined in the claims.
Claims
1. A heating station for use in a deposition apparatus, the heating station comprising: include: A base, wherein the base is provided with a support surface for supporting the wafer; The first heating pipe includes a first heating section, a first inlet pipe, and a first outlet pipe. The first heating section is disposed within the base. The heat transfer fluid in the first heating pipe flows into the first heating section through the first inlet pipe to heat the base and then flows out through the first outlet pipe. The second heating pipe includes a second heating section, a second inlet pipe, and a second outlet pipe. The second heating section is disposed within the base. The heat transfer fluid in the second heating pipe flows into the second heating section through the second inlet pipe to heat the base and flows out through the second outlet pipe. The second heating section is arranged around the periphery of the first heating section. A first temperature control mechanism is connected to the first heating pipe and is used to provide the heat transfer fluid to the first heating pipe and control the temperature and flow rate of the heat transfer fluid in the first heating pipe. The second temperature control mechanism is connected to the second heating pipe and is used to provide the heat transfer fluid to the second heating pipe and control the temperature and flow rate of the heat transfer fluid in the second heating pipe.
2. The heating station of claim 1, wherein, The bearing surface includes a central area and an edge area surrounding the central area, the first heating section is provided corresponding to the central area, and the second heating section is provided corresponding to the edge area; The heating platform also includes: A first temperature sensor is connected to the first temperature control mechanism. The first temperature sensor is used to test the temperature of the central area and upload the temperature of the central area to the first temperature control mechanism. The second temperature sensor is connected to the second temperature control mechanism. The second temperature sensor is used to test the temperature of the edge area and upload the temperature of the edge area to the second temperature control mechanism.
3. The heating station of claim 1, wherein, The heating platform also includes: A heat insulation channel is located between the first heating pipe and the second heating pipe.
4. The heating station of claim 3, wherein, The heating platform also includes: A heat insulation element located within the heat insulation channel.
5. The heating station of claim 1, wherein, The heat transfer fluid is a perfluoropolyether fluorine liquid.
6. The heating station of claim 1, wherein, The first temperature control mechanism includes: A first storage tank is used to store the heat transfer fluid, and the first inflow pipe and the second outflow pipe are respectively connected to the first storage tank; A first temperature controller is connected to the liquid storage tank and is used to control the temperature of the heat transfer liquid in the first liquid storage tank. A first valve is installed on the first inflow pipe; A first controller is connected to the first temperature controller and is used to control the temperature of the heat transfer fluid in the first storage tank. The first controller is also connected to the first valve and is used to control the opening degree of the first valve to control the flow rate of the heat transfer fluid in the first heating pipe. The second temperature control mechanism includes: The second liquid storage tank is used to store the heat transfer liquid, and the second inflow pipe and the second outflow pipe are respectively connected to the second liquid storage tank; A second temperature controller is connected to the storage tank and is used to control the temperature of the heat transfer liquid in the second storage tank. The second valve is installed on the second inflow pipe; The second controller is connected to the second temperature controller and is used to control the temperature of the heat transfer fluid in the second storage tank. The second controller is also connected to the second valve and is used to control the opening degree of the second valve to control the flow rate of the heat transfer fluid in the second heating pipe.
7. The heating station of claim 6, wherein, The first controller and the second controller are integrated into a single control mechanism.
8. The heating station of claim 1, wherein, The heating platform also includes: At least one third heating pipe, the third heating pipe including a third heating section, a third inlet pipe and a third outlet pipe, the third heating section being disposed within the base, the heat transfer fluid in the third heating pipe flowing into the third heating section through the third inlet pipe to heat the base, and flowing out through the third outlet pipe; at least one third temperature control mechanism, the third temperature control mechanism being connected to the third heating pipe, for providing the heat transfer fluid to the third heating pipe and controlling the temperature and flow rate of the heat transfer fluid in the third heating pipe; The third heating section is located between the first heating section and the second heating section, and is arranged around the periphery of the first heating section.
9. The heating station of claim 8, wherein, The first heating section, the second heating section, and the third heating section are all spiral-shaped.
10. A deposition apparatus, characterized by, include, cavity; An air intake mechanism is provided at the top of the cavity. The air intake mechanism has an air intake hole and an air intake pipe connected to the air intake hole. The air intake pipe is connected to the cavity. The air intake hole is used to connect to the air intake pipe that provides gas. An air extraction port, which is connected to the cavity; The heating stage as claimed in any one of claims 1-9, wherein the heating stage is used to place a wafer.