Magnetron sputtering process module

Abstract

The utility model relates to a magnetron sputtering process module which is characterized in that a vacuum cavity is composed of a lower cavity body and an upper cover, and a closed sputtering process cavity is formed in the vacuum cavity; the sputtering device comprises a magnetic control cathode, a target material and a sputtering power supply; the substrate frame system comprises a plurality of substrate trays, a substrate support, the substrate trays and a substrate support motion driving mechanism, and the substrate trays and the substrate support motion driving mechanism are composite motion driving mechanisms. A cathode mounting flange is arranged on the upper cover or a plurality of cathode mounting flanges are arranged along the circumferential direction, a magnetic control cathode is mounted at each cathode mounting flange, a target material is mounted at the lower end part of the magnetic control cathode, and a sputtering power supply is connected with the magnetic control cathode; and the substrate tray and the substrate bracket are arranged below the magnetic control cathode in the sputtering process cavity. According to the magnetron sputtering process module, a film coating process on a large-size substrate can be completed by using a small-size target material, and high uniformity of film thickness, high utilization rate of the target material and diversity of the magnetron sputtering process can be obtained.

Description

Technical Field

[0001] This invention relates to the field of thin film deposition technology, specifically to a magnetron sputtering process module. Background Technology

[0002] Currently, magnetron sputtering, compared to other coating technologies, is widely used in various fields such as microelectronics, optoelectronics, nanotechnology, new materials, biomedicine, energy, and aerospace due to its advantages such as low deposition temperature, high film quality, good uniformity, and fast deposition rate. In the microelectronics field, it can be used to manufacture metal interconnect layers and gates in integrated circuits; in the optoelectronics field, it can be used to prepare optical thin films and light-emitting diodes (LEDs); and in the energy field, it can be used to prepare electrodes and thin-film batteries for solar cells.

[0003] The core of magnetron sputtering is to increase the plasma density and thus the sputtering efficiency by introducing a magnetic field onto the target surface in a vacuum environment. This magnetic field confines charged particles, increasing the sputtering efficiency. Specifically, within the vacuum chamber, the target acts as the cathode and is subjected to a negative potential. The working gas (such as argon) is ionized under the influence of the electric field to generate argon ions. These argon ions are accelerated and bombard the target surface, giving the target atoms sufficient energy to be sputtered and deposited onto the substrate to form a thin film. Simultaneously, the presence of the magnetic field causes electrons to undergo helical motion near the target surface, increasing the probability of collisions between electrons and gas molecules, improving the ionization efficiency of the gas, and consequently increasing the plasma density and sputtering efficiency.

[0004] The magnetron sputtering process module mainly consists of the following key parts:

[0005] Vacuum system: Used to create a high vacuum environment, reduce the scattering of sputtered particles by gas molecules, ensure that sputtered particles can smoothly reach the substrate surface from the target, and guarantee the purity and quality of the film.

[0006] Sputtering system: includes target material, sputtering power supply, and magnetic field generator. The target material is the raw material to be sputtered, and its material determines the composition of the deposited film; the sputtering power supply provides energy for the sputtering process; the magnetic field generator controls the trajectory of electrons by generating a specific magnetic field distribution, thereby improving plasma density and sputtering efficiency.

[0007] Substrate holder system: Used to hold substrates, and can heat the substrates through a heating structure to meet the temperature requirements of different thin film deposition processes.

[0008] Gas supply system: Provides the working gas (such as argon) or reactive gas (such as oxygen or nitrogen) required for sputtering. The type and pressure of the gas have a significant impact on plasma formation and thin film composition.

[0009] Although magnetron sputtering modules have been widely used in thin film deposition, existing technologies still have some shortcomings in adapting to the diversity of substrates and processes. For example, most current sputtering processes are based on a single substrate size, and magnetron sputtering equipment has difficulty adapting to the compatibility of different substrate sizes. To obtain good film thickness uniformity on the substrate, a target with a diameter larger than the substrate size is usually required. It is difficult to achieve good film thickness uniformity on a larger substrate size using a smaller target. Using a large target to sputter a small substrate results in some target overflow during sputtering, leading to waste. In addition, the target needs to be replaced before it breaks down, and the unusable volume of the target is large, resulting in low utilization of existing large-diameter targets, especially for some expensive target materials, which leads to high sputtering costs. Furthermore, existing magnetron sputtering modules are relatively simple, usually performing single-substrate, single-target sputtering deposition, and a single device cannot achieve the diversity of magnetron sputtering processes. Utility Model Content

[0010] To address the aforementioned technical problems, this utility model proposes a magnetron sputtering process module that can utilize a smaller target material to complete a coating process on a larger substrate, achieve high uniformity in film thickness, and enable diverse magnetron sputtering processes.

[0011] The above-mentioned objective of this utility model is achieved through the following technical solution:

[0012] A magnetron sputtering process module includes a high vacuum chamber, a sputtering device, a substrate holder system, and a gas supply device; characterized in that: the vacuum chamber is composed of a lower chamber and an upper cover, the upper cover being sealed and fastened to the upper end of the lower chamber, forming a closed sputtering process chamber; an interface for connecting to an external vacuum pump and an inlet interface for connecting to the gas supply device are provided on the side wall of the lower chamber; a substrate inlet and outlet are provided on the side of the lower chamber, and a switchable valve is installed at the substrate inlet and outlet;

[0013] The sputtering apparatus includes a magnetron cathode, a target material, and a sputtering power supply; the substrate holder system includes a substrate tray, a substrate support, a substrate tray motion drive mechanism, and a substrate support motion drive mechanism; there are multiple substrate trays, which are arranged circumferentially around the center of the substrate support; the substrate tray and substrate support motion drive mechanism is a composite motion drive mechanism used to drive the substrate support to rotate the substrate tray around the center of the revolution axis, while simultaneously driving each substrate tray to rotate around its own center of rotation axis;

[0014] A cathode mounting flange is provided on the top cover, or multiple cathode mounting flanges are arranged circumferentially with the center of the top cover as the center. A magnetron cathode is installed at each cathode mounting flange. The target material is installed at the lower end of the magnetron cathode. The sputtering power supply is connected to the magnetron cathode. The substrate tray and substrate support are placed below the magnetron cathode in the sputtering process cavity. Multiple substrate trays and magnetron cathodes are eccentrically arranged in the radial direction of the substrate support.

[0015] Furthermore, the substrate support is a disc-shaped support, coaxially disposed within the lower cavity. The center of the substrate support is coaxially driven and connected to the upper end of the revolution axis. An eccentric mounting through hole is provided on the substrate support, or multiple mounting through holes are arranged circumferentially around the center of the substrate support. A self-rotating bearing seat is installed in each mounting through hole. Each self-rotating bearing seat is rotatably engaged with the self-rotating axis of a substrate tray via a bearing. The motion drive mechanism of the substrate tray and substrate support includes a revolution drive motor, a self-rotating drive motor, a central wheel, and planetary gears. Multiple planetary gears are respectively fixed to the lower ends of multiple self-rotating axes. The central wheel is coaxially fixedly connected to an upper bearing seat, which is positioned and installed in the central hole at the bottom of the lower cavity. The central wheel meshes with multiple planetary gears. A lower bearing seat is fixed at the lower end of the lower cavity, and the lower bearing seat is connected to... The upper bearing housing is coaxially arranged. A bushing, with its upper and lower limits, is installed in the central holes of both the upper and lower bearing housings. The bushing is rotatably connected to the lower bearing housing via a bearing. The upper end of the bushing is connected to the central hole of the upper bearing housing via a key. A first driven wheel is fixed on the bushing below the lower bearing housing. The first driven wheel is connected to a first driving wheel via a synchronous belt or gear meshing. The first driving wheel is fixedly installed at the output end of a self-rotating drive motor, which is fixed below the lower cavity via a motor bracket. The revolution shaft is fitted inside the bushing, and its upper end is rotatably connected to the upper bearing housing via a bearing. A second driven wheel is fixed on the revolution shaft near its lower end. The second driven wheel is connected to a second driving wheel via a synchronous belt or gear meshing. The second driving wheel is fixedly installed at the output end of the revolution drive motor.

[0016] Furthermore, an encoder is fixedly installed at the lower end of the revolution shaft.

[0017] Furthermore, a shield is installed above the substrate support in the vacuum chamber via a support column. The shield has through holes corresponding to the position of each substrate tray, allowing the substrate tray to extend upwards. A baffle is provided at the upper end of the shield between two adjacent substrate trays, and multiple baffles intersect at the center.

[0018] Furthermore, it also includes an electric lifting device for the upper cover, which includes an electric cylinder, guide seats, and an upper cover connecting frame. The electric cylinder is vertically fixed on the lower frame, and multiple guide seats are fixed on the outer side wall of the lower cavity in the vertical direction. The upper cover connecting frame is fixed to the upper end of the upper cover, and the cylinder rod of the electric cylinder passes through the guide holes on the two guide seats, with its upper end connected to the upper cover connecting frame.

[0019] Furthermore: One or more spacing adjustment rings are installed below the housing flange of the magnetron cathode, and the spacing adjustment rings are connected to the cathode flange on the top cover.

[0020] The advantages and positive effects of this utility model are as follows:

[0021] 1. This magnetron sputtering module allows the substrate tray to rotate continuously or in a scanning (back-and-forth) manner around the center of the cathode's revolution axis. Simultaneously, the substrate tray can also rotate around its own axis. Furthermore, the substrate tray's position is offset from the cathode's central axis. During the sputtering process, different parts of a large-diameter substrate supported on the substrate tray can be successively positioned below the target sputtering area. This enables sputtering of large-diameter substrates using a small target. This method reduces target waste and unusable volume before target replacement, significantly improving target utilization. It also achieves better coating uniformity: for general metals, film thickness uniformity can reach ≤±2%; for magnetic materials, ≤±3%; and for reactive sputtering materials, ≤±3%.

[0022] 2. The substrate holder designed in this utility model can hold specially designed substrate trays with a diameter of 6 inches or less. The substrate tray material can be hard oxygen-free copper, silicon carbide, etc. The substrate tray can hold regular or irregular substrates with a diameter of 6 inches or less, and the substrate material can be silicon, ceramic, glass, silicon carbide (SiC), gallium arsenide, gallium nitride, sapphire, etc., achieving substrate diversity.

[0023] 3. This magnetron sputtering process module can achieve sputtering coating of a single substrate under the rotation of the substrate tray or a combination of rotation and revolution, and can simultaneously achieve sputtering coating of a target material of one type on multiple substrates under the rotation of the substrate tray or a combination of rotation and revolution. In addition, when multiple magnetron cathodes are installed on the upper cover, targets of different materials can be placed at the lower end of the multiple magnetron cathodes, so as to achieve multi-layer sputtering coating of multiple materials on the surface of the substrate under the same vacuum environment and at different sputtering time stages, thereby realizing the diversity of magnetron sputtering process and improving the applicability of the equipment. Attached Figure Description

[0024] Figure 1This is a schematic diagram of the overall appearance of the magnetron sputtering process module of this utility model. Figure 1 (excluding the bottom frame);

[0025] Figure 2 This is a schematic diagram of the overall appearance of the magnetron sputtering process module of this utility model. Figure 2 ;

[0026] Figure 3 This is a schematic diagram of the installation of the magnetron cathode of the magnetron sputtering process module of this utility model on the upper cover plate;

[0027] Figure 4 This is a schematic diagram of the structure of the magnetron cathode of the magnetron sputtering process module of this utility model;

[0028] Figure 5 This is a perspective view of the substrate holder system of this utility model;

[0029] Figure 6 This is an overall sectional view of the substrate holder system of this utility model;

[0030] Figure 7 This is a schematic diagram of the lower cavity and its internal mounting structure of the magnetron sputtering process module of this utility model.

[0031] In the diagram: 1. Magnetron cathode; 2. Gap adjustment pressure ring; 3. Top cover; 4. Lower cavity; 5. Substrate inlet / outlet; 6. Capacitor vacuum gauge; 7. Rotation drive motor; 8. Revolution drive motor; 9. Electric cylinder; 10. Condensation pump; 11. Guide seat; 12. Observation port; 13. Target material; 14. Substrate tray; 15. Baffle; 16. Shielding cover; 17. First driving wheel; 18. First driven wheel; 19. Encoder; 20. Second driving wheel; 21. Second driven wheel; 22. Magnetohydrodynamic seal; 23. Substrate support; 24. Upper bearing seat; 25. Central wheel; 26. Planetary gear; 27. Lower bearing seat; 28. Bushing; 29. ​​Revolution shaft. Detailed Implementation

[0032] The structure of this utility model will be further described below with reference to the accompanying drawings and embodiments. It should be noted that these embodiments are descriptive and not limiting.

[0033] A magnetron sputtering process module, please refer to Figures 1-7The system mainly includes a vacuum system, a sputtering system, a substrate holder system, and a gas supply system. The vacuum system includes a high-vacuum chamber, a vacuum pumping system, and a capacitive vacuum gauge 6. In this invention, the vacuum chamber adopts a cylindrical cavity structure, consisting of a lower cavity 4 and an upper cover 3. The lower end of the lower cavity is fixed to a lower frame, which is made of a robust aluminum alloy frame. Adjustable casters can be installed at the lower end of the lower frame, allowing for easy repositioning via the casters contacting the bottom surface. The lower frame and casters are not shown in the accompanying drawings. A substrate inlet / outlet 5 is provided on the side of the lower cavity, and a pneumatic valve is installed at the substrate inlet / outlet. This valve is a gate valve, which can be driven by compressed air to seal and open the substrate inlet / outlet. Additionally, a transparent observation port 12 is provided on the side wall of the lower cavity to facilitate observation of the cavity during sputtering.

[0034] The upper cover is sealed and placed over the upper end of the lower cavity, forming a closed sputtering process chamber. A cathode mounting flange is provided on the upper cover, or multiple cathode mounting flanges are arranged circumferentially around the center of the upper cover. A magnetron cathode 1 can be installed at each cathode mounting flange.

[0035] The vacuum system includes a condenser pump 10, a primary vacuum pump, a fully automatic gate valve, a bypass vacuum valve, and an inflation valve. The condenser pump is connected to a flange interface pre-reserved on the side wall of the lower cavity via the fully automatic gate valve. The primary vacuum pump is connected to a flange interface pre-reserved on the side wall of the lower cavity via the bypass vacuum valve. The inflation valve is connected to a pre-reserved interface position on the side wall of the lower cavity.

[0036] The capacitive vacuum gauge is installed on the side wall of the lower cavity and is used to monitor the vacuum level of the cavity during the sputtering process.

[0037] The sputtering system includes magnetron cathodes, target material 13, and a sputtering power supply. The target material is mounted at the lower end of each set of magnetron cathodes via clamps or adhesive bonding. Each set of magnetron cathodes is electrically connected to the sputtering power supply, which can be DC, radio frequency, etc. The magnetron control device of the magnetron cathode can be a permanent magnet system or an electromagnetic coil system. The outer shell flanges of multiple sets of magnetron cathodes are fixedly connected to multiple cathode mounting flanges on the upper cover by screws.

[0038] The substrate holder system is a magnetron-controlled anode, comprising a substrate tray 14, a substrate support 23, a substrate tray, and a substrate support motion drive mechanism. The substrate tray has a rotating shaft fixed at its lower center. The substrate support is a disc-shaped support, coaxially disposed within the lower cavity. The center of the substrate support is coaxially driven to the upper end of a revolution shaft 29. An eccentric mounting through-hole or multiple mounting through-holes arranged circumferentially around the center of the substrate support are provided on the substrate support. A rotating bearing seat is installed in each mounting through-hole. Each rotating bearing seat is rotatably engaged with the rotating shaft of a substrate tray via a bearing. The substrate tray and substrate support motion drive mechanism is a composite motion drive mechanism, used to drive the substrate support to rotate multiple substrate trays around the revolution shaft, and simultaneously drive each substrate tray to rotate around its own rotating shaft. Specifically, it includes a revolution drive motor 8, a rotating drive motor 7, a central wheel 25, and planetary gears 26. Multiple planetary gears are fixed to the lower ends of multiple rotating shafts. The central gear is coaxially fixedly connected to an upper bearing seat 24, which is positioned and installed in the central hole at the bottom of the lower cavity. The central gear meshes with the multiple planetary gears. A lower bearing seat 27 is fixed at the lower end of the lower cavity. The lower bearing seat and the upper bearing seat are coaxially arranged. A bushing 28, which is vertically and vertically limited, is inserted into the central holes of both the upper and lower bearing seats. The bushing is rotatably connected to the lower bearing seat via a bearing. The upper end of the bushing is connected to the central hole of the upper bearing seat via a key. A first driven gear 18 is fixed on the bushing below the lower bearing seat. The first driven gear is connected to a first driving gear 17 via a synchronous belt or gear meshing. The first driving gear is fixedly installed at the output end of a self-rotating drive motor, which is fixed to the lower part of the lower cavity via a motor bracket.

[0039] The revolution shaft is fitted inside the bushing with clearance, and its upper end is rotatably connected to the upper bearing seat via a bearing. A second driven wheel 21 is fixed on the revolution shaft near its lower end. The second driven wheel is connected to a second driving wheel 20 via a synchronous belt or gear meshing. The second driving wheel is fixedly installed at the output end of the revolution drive motor. Furthermore, to detect the revolution speed and rotation speed, an encoder 19 is fixedly installed at the lower end of the revolution shaft. Additionally, a magnetohydrodynamic seal 22 is installed on the revolution shaft above the second driven wheel. The upper end of the magnetohydrodynamic seal forms an insert-fit with the lower end of the bushing. The function of the magnetohydrodynamic seal is to maintain a high vacuum environment within the cavity. The magnetohydrodynamic seal can be a product manufactured by Ferrotec, model number: HFL-020-CN.

[0040] The aforementioned substrate support can rotate continuously or in a scanning (back and forth) manner around the center of the revolution axis under the magnetron cathode, with a speed of up to 5 RPM, and can be quickly accelerated to a certain uniform speed; while the substrate tray can rotate around the center of its own rotation axis, with a rotation speed of up to 30 RPM, and the position of the substrate tray can be offset from the central axis of the magnetron cathode to obtain better uniformity.

[0041] The lower cavity is grounded via a cable.

[0042] Additionally, a shield 16 is mounted above the substrate support within the vacuum chamber via support columns. The shield has through-holes corresponding to the positions of each substrate tray, allowing the trays to extend upwards. A baffle 15 is positioned at the upper end of the shield between two adjacent substrate trays, with multiple baffles intersecting at their centers. The shield and baffles reduce cross-contamination between different magnetron cathodes.

[0043] The gas supply system includes a flow meter, a shut-off valve, and gas supply pipelines. A gas supply interface is installed at the bottom of the lower cavity, which can supply Ar, N2, and O2 as needed. The gas supply pipeline is made of stainless steel electropolished tubing and is equipped with a shut-off valve and a VCR interface.

[0044] In the above structure, to facilitate the replacement of the target material and shielding cover, an electric lifting device for the upper cover is also included. The electric lifting device for the upper cover includes an electric cylinder 9, a guide seat 11, and an upper cover connecting frame. The electric cylinder is vertically fixed on the lower frame, and multiple guide seats are fixed on the outer side wall of the lower cavity in the vertical direction. The upper cover connecting frame is fixed to the upper end of the upper cover. The cylinder rod of the electric cylinder passes through the guide holes on the two cylinder rod guide seats, and its upper end is connected to the upper cover connecting frame.

[0045] In the above structure, in order to adjust the distance between the target and the substrate to further optimize the uniformity of the coating and the deposition rate, a distance adjustment ring 2 is installed below the housing flange of the magnetron cathode. By adjusting the number of distance adjustment rings, the installation height of the magnetron cathode can be adjusted, thereby adjusting the distance between the target and the substrate. In this invention, the distance between the target and the substrate can be adjusted from 30 to 80 mm.

[0046] The working principle of this utility model is as follows:

[0047] The substrate inlet / outlet on the lower chamber is opened, and the substrate is fed into the substrate tray by an external robotic arm. Then, the gate valve is closed to seal the vacuum chamber. The primary vacuum pump is then turned on to evacuate the chamber. When the vacuum level reaches a certain set value, the cold pump is turned on for further vacuum treatment. When the vacuum level reaches the set final value, the vacuum system is turned off, the gas supply system is turned on, and the sputtering gas medium is introduced. When the set gas flow rate is reached, the magnetron cathode is energized, and the self-rotation drive motor and the revolution drive motor are turned on, so that the substrate completes the coating in the state of revolution and rotation.

[0048] This magnetron sputtering process module is suitable for coating materials that can be ordinary metals, such as Ti and Cu, with a coating thickness uniformity of ≤±2%; coating materials that can be magnetic materials, such as Ni, with a coating thickness uniformity of ≤±3%; and it can also achieve reactive sputtering, such as Ta+N2, with a coating thickness uniformity of ≤±3%.

[0049] Example:

[0050] 1. Substrate tray: 6-inch diameter stainless steel substrate tray;

[0051] 2. Substrate: A substrate tray can hold four 2-inch square ceramic substrates;

[0052] 3. The magnetron sputtering process module can load four substrate trays at a time;

[0053] 4. Target materials used: 6-inch diameter Ti target with a thickness of 6mm; 6-inch diameter Ni target with a thickness of 3mm; 6-inch diameter Ta target with a thickness of 6mm;

[0054] 5. Film thickness: Ti 200nm; Ni 150nm; Ta+N2, resistivity 50 ohm / sq;

[0055] 6. High uniformity substrate carrier speed: 5 rpm for revolution and 15 rpm for rotation;

[0056] 7. Measurement method for film thickness uniformity: Measurement points are taken at 5 points for each film.

[0057] 8. Film thickness uniformity formula: (max-min) / (max+min)*100%

[0058] 9. Actual measurement results:

[0059]

[0060] Although embodiments and drawings of the present invention have been disclosed for illustrative purposes, those skilled in the art will understand that various substitutions, variations and modifications are possible without departing from the spirit and scope of the present invention and the appended claims. Therefore, the scope of the present invention is not limited to the contents disclosed in the embodiments and drawings.

Claims

1. A magnetron sputtering process module, comprising a high vacuum chamber, a sputtering device, a substrate holder system, and a gas supply device; characterized in that: The vacuum chamber consists of a lower chamber and an upper cover. The upper cover is sealed and fastened to the upper end of the lower chamber, forming a closed sputtering process chamber inside. An interface for connecting to an external vacuum device and an air inlet for connecting to a gas supply device are provided on the side wall of the lower chamber. A substrate inlet and outlet are provided on the side of the lower chamber, and a switchable valve is installed at the substrate inlet and outlet. The sputtering apparatus includes a magnetron cathode, a target material, and a sputtering power supply; the substrate holder system includes a substrate tray, a substrate support, a substrate tray motion drive mechanism, and a substrate support motion drive mechanism; there are multiple substrate trays, which are arranged circumferentially around the center of the substrate support; the substrate tray and substrate support motion drive mechanism is a composite motion drive mechanism used to drive the substrate support to rotate the substrate tray around the center of the revolution axis, while simultaneously driving each substrate tray to rotate around its own center of rotation axis; A cathode mounting flange is provided on the top cover, or multiple cathode mounting flanges are arranged in a circumferential direction with the center of the top cover as the center. A magnetron cathode is installed at each cathode mounting flange. The target material is installed at the lower end of the magnetron cathode. The sputtering power supply is connected to the magnetron cathode. The substrate trays and substrate holders are positioned below the magnetron cathode within the sputtering process chamber; multiple substrate trays and magnetron cathodes are eccentrically arranged in the radial direction of the substrate holder.

2. The magnetron sputtering process module according to claim 1, characterized in that: The substrate support is a disc-shaped support, coaxially disposed within the lower cavity. The center of the substrate support is coaxially driven and connected to the upper end of a revolution axis. An eccentric mounting through-hole is provided on the substrate support, or multiple mounting through-holes are arranged circumferentially around the center of the substrate support. A self-rotating bearing seat is installed in each mounting through-hole. Each self-rotating bearing seat is rotatably engaged with the self-rotating axis of a substrate tray via a bearing. The motion drive mechanism of the substrate tray and substrate support includes a revolution drive motor, a self-rotating drive motor, a central wheel, and planetary gears. Multiple planetary gears are respectively fixed to the lower ends of multiple self-rotating axes. The central wheel is coaxially fixedly connected to an upper bearing seat, which is positioned and installed in the central hole at the bottom of the lower cavity. The central wheel meshes with multiple planetary gears. A lower bearing seat is fixed at the lower end of the lower cavity, and the lower bearing seat is connected to the upper... The bearing housings are coaxially arranged. Upper and lower bearing housings are fitted with vertically and vertically limited bushings in their central holes. The bushings are rotatably connected to the lower bearing housing via bearings. The upper end of the bushing is connected to the central hole of the upper bearing housing via a key. A first driven wheel is fixed on the bushing below the lower bearing housing. The first driven wheel is connected to a first driving wheel via a synchronous belt or gear meshing. The first driving wheel is fixedly installed at the output end of a self-rotating drive motor, which is fixed below the lower cavity via a motor bracket. A revolution shaft is fitted inside the bushing, and its upper end is rotatably connected to the upper bearing housing via a bearing. A second driven wheel is fixed on the revolution shaft near its lower end. The second driven wheel is connected to a second driving wheel via a synchronous belt or gear meshing. The second driving wheel is fixedly installed at the output end of the revolution drive motor.

3. The magnetron sputtering process module according to claim 2, characterized in that: An encoder is fixedly installed at the lower end of the revolution shaft.

4. The magnetron sputtering process module according to claim 1, characterized in that: A shield is installed above the substrate holder in the vacuum chamber via a support column. The shield has through holes corresponding to the position of each substrate tray, allowing the substrate tray to extend upwards. A baffle is provided at the upper end of the shield between two adjacent substrate trays, and multiple baffles intersect at the center.

5. The magnetron sputtering process module according to claim 1, characterized in that: It also includes an electric lifting device for the upper cover, which includes an electric cylinder, guide seats and an upper cover connecting frame; the electric cylinder is vertically fixed on the lower frame, multiple guide seats are fixed on the outer side wall of the lower cavity in the vertical direction, the upper cover connecting frame is fixed to the upper end of the upper cover, and the cylinder rod of the electric cylinder passes through the guide holes on the two guide seats, and its upper end is connected to the upper cover connecting frame.

6. The magnetron sputtering process module according to claim 1, characterized in that: One or more spacing adjustment rings are installed below the housing flange of the magnetron cathode, and are connected to the cathode flange on the top cover through the spacing adjustment rings.

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