Wafer fixing device and wafer processing equipment

Abstract

The utility model relates to a wafer fixing device and wafer processing equipment. The wafer fixing device comprises a bearing disc, a vacuum generator and an adjusting valve. The bearing disc is used for bearing a wafer and comprises a first vacuum area and a second vacuum area, and the second vacuum area is arranged around the first vacuum area; the vacuum generator is respectively connected to the first vacuum area and the second vacuum area of the bearing disc; the regulating valve is arranged between the second vacuum area and the vacuum generator and is used for regulating the pressure in the second vacuum area; wherein the pressure intensity in the first vacuum area is not smaller than that in the second vacuum area. By adjusting the pressure in the second vacuum area, the pressure in the first vacuum area of the bearing disc is not smaller than the pressure in the second vacuum area. Therefore, pollution generated in the semiconductor process manufacturing process, such as carbon powder generated on the back surface of the wafer, cannot flow back to the front surface of the wafer borne on the bearing disc under the action of the pressure difference, so that the pollution on the front surface of the wafer is reduced, and the product yield is improved.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor manufacturing technology, and in particular to a wafer fixing device and wafer processing equipment. Background Technology

[0002] In the field of semiconductor manufacturing technology, silicon carbide (SiC) substrates are commonly used. In the use of SiC substrates, the silicon side and the carbon side each have different advantages. The silicon side is typically used for epitaxial layer growth due to its lower number of epitaxial dislocations, resulting in higher production yields. The carbon side, on the other hand, is mainly used for back-side processing, such as polishing, sputtering, and laser annealing.

[0003] During laser annealing, high temperatures cause carbon to precipitate from silicon-carbon, generating carbon powder. This carbon powder can penetrate onto the front side of the wafer through the negative pressure of the machine, causing contamination. Typically, carbon powder contamination is mainly due to wafer warping preventing complete adsorption. Maintaining wafer cleanliness is crucial in semiconductor manufacturing; carbon powder contamination significantly impacts electrical performance and the yield of subsequent processing. Utility Model Content

[0004] Based on this, embodiments of this application provide a wafer fixing device and a wafer processing equipment.

[0005] According to some embodiments, this application provides a wafer fixing device, which includes a carrier disk, a vacuum generator, and a regulating valve. The carrier disk is used to hold the wafer and includes a first vacuum region and a second vacuum region, with the second vacuum region surrounding the first vacuum region. The vacuum generator is connected to both the first vacuum region and the second vacuum region of the carrier disk. The regulating valve is disposed between the second vacuum region and the vacuum generator and is used to regulate the pressure in the second vacuum region. The pressure in the first vacuum region is not less than the pressure in the second vacuum region.

[0006] In the aforementioned wafer fixing device, by installing an adjusting valve between the second vacuum zone of the carrier disk and the vacuum generator, the pressure in the second vacuum zone can be adjusted so that the pressure in the first vacuum zone of the carrier disk is not less than the pressure in the second vacuum zone; that is, the pressure on the periphery of the carrier disk is less than the pressure on the inner side. Thus, contaminants generated during the semiconductor manufacturing process, such as carbon dust generated on the back side of the wafer, will not flow back to the front side of the wafer carried on the carrier disk under the effect of the aforementioned pressure difference, thereby reducing front-side contamination of the wafer and improving product yield.

[0007] In some embodiments, the wafer fixing device further includes a first vacuum passage and a second vacuum passage; a first end of the first vacuum passage is connected to a first vacuum region of the carrier disk, and a first end of the second vacuum passage is connected to a second vacuum region of the carrier disk; wherein, an adjusting valve is disposed on the second vacuum passage.

[0008] In some embodiments, the wafer fixing device further includes a main vacuum passage; the first end of the main vacuum passage is connected to the second end of the first vacuum passage and the second end of the second vacuum passage, respectively, and the second end of the main vacuum passage is connected to a vacuum generator.

[0009] In some embodiments, the carrier disk is circular; the first vacuum region has a first preset outer diameter; the second vacuum region has a second preset outer diameter; the second preset outer diameter is greater than the first preset outer diameter.

[0010] In some embodiments, the range of the first preset outer diameter includes 3.5 inches to 4.5 inches; and / or the range of the second preset outer diameter includes 5.5 inches to 6.5 inches.

[0011] According to some embodiments, this application also provides a wafer processing apparatus, which includes the wafer fixing device in any of the above embodiments.

[0012] In some embodiments, the wafer processing equipment further includes an airflow hood and a gas delivery device; the airflow hood is disposed directly above the support tray; the gas delivery device is disposed at the top edge of the airflow hood and is used to deliver a preset gas into the airflow hood.

[0013] In some embodiments, there is a preset distance between the bottom surface of the airflow shroud and the top surface of the support plate; the preset distance ranges from 5 mm to 8 mm.

[0014] In some embodiments, the airflow shroud has a preset height; the preset height ranges from 180 mm to 220 mm.

[0015] In some embodiments, the wafer processing equipment further includes a laser galvanometer, which is disposed above the airflow shroud and moves horizontally along the direction parallel to the top surface of the support disk. Attached Figure Description

[0016] Figure 1 This is a schematic diagram of a semiconductor machine performing a semiconductor process;

[0017] Figure 2 This is a schematic diagram of the structure of a wafer fixing device provided in one embodiment of this application;

[0018] Figure 3 A schematic diagram comparing the distribution of contaminants after a semiconductor process is performed on a semiconductor machine and a wafer fixing device provided in an embodiment of this application;

[0019] Figure 4 This is a schematic diagram of the structure of a wafer processing equipment provided in one embodiment of this application.

[0020] Explanation of reference numerals in the attached figures:

[0021] 10. Support plate; 11. First vacuum zone; 12. Second vacuum zone; 20. Vacuum generator; 30. Regulating valve; 41. First vacuum passage; 42. Second vacuum passage; 43. Main vacuum passage; 50. Airflow hood; 60. Gas delivery device; 70. Laser galvanometer. Detailed Implementation

[0022] To facilitate understanding of this utility model, a more complete description will be given below with reference to the accompanying drawings. Preferred embodiments of this utility model are shown in the drawings. However, this utility model can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided to provide a more thorough and complete understanding of the disclosure of this utility model.

[0023] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "and / or" as used herein includes any and all combinations of one or more of the associated listed items.

[0024] In the description of this application, it should be understood that if terms such as "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential" appear, these terms indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0025] Furthermore, where the terms "first" and "second" appear, these terms are for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined with "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, where the term "multiple" appears, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0026] In this application, unless otherwise expressly specified and limited, the terms "installation," "connection," "joining," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise expressly limited. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0027] In this application, unless otherwise expressly specified and limited, the use of descriptions such as "above" or "below" the second feature indicates that the first and second features are in direct contact or indirect contact via an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. Similarly, "below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0028] It should be noted that if an element is referred to as being "fixed to" or "set on" another element, it can be directly on the other element or there may be an intervening element. If an element is considered to be "connected to" another element, it can be directly connected to the other element or there may be an intervening element. If so, the terms "vertical," "horizontal," "upper," "lower," "left," "right," and similar expressions used in this application are for illustrative purposes only and do not represent the only possible implementation.

[0029] In the laser annealing process, high-temperature laser irradiation causes carbon atoms in silicon carbide to precipitate, forming carbon powder. If this carbon powder is not effectively controlled, it can contaminate the wafer surface, affecting subsequent processes and product quality. Please refer to [reference needed]. Figure 1 During the laser annealing process, the equipment is responsible for adsorbing the wafer to maintain its stability. Due to wafer warpage during processing and limitations in process design, small gaps often exist between the equipment and the wafer, making it impossible to form a perfect adsorption environment. More importantly, due to the negative pressure around the equipment, toner may be sucked in and fall onto the front side of the wafer, causing contamination.

[0030] Vacuum belts use negative pressure to adsorb wafers, ensuring they remain stably positioned during processing. The greater the negative pressure, the more effective the adsorption, preventing wafer movement or warping. For example, on a machine with 4-inch and 6-inch vacuum belts, these belts typically adsorb simultaneously and maintain the same vacuum level. However, when a gap exists between the equipment and the wafer, the negative pressure can cause problems. If toner precipitates and is not effectively controlled, it can be drawn in by the negative pressure, leading to contamination on the wafer's front side. This contamination not only affects product quality but can also reduce the yield and reliability of subsequent processes.

[0031] Please refer to Figure 2 This application provides a wafer fixing device, which includes a carrier plate 10, a vacuum generator 20, and a regulating valve 30. The carrier plate 10 is used to hold the wafer and includes a first vacuum region 11 and a second vacuum region 12, with the second vacuum region 12 surrounding the first vacuum region 11. The vacuum generator 20 is connected to both the first vacuum region 11 and the second vacuum region 12 of the carrier plate 10. The regulating valve 30 is disposed between the second vacuum region 12 and the vacuum generator 20 and is used to regulate the pressure in the second vacuum region 12. The pressure in the first vacuum region 11 is not less than the pressure in the second vacuum region 12.

[0032] In the wafer fixing device of the above embodiment, by providing an adjusting valve 30 between the second vacuum zone 12 of the carrier disk 10 and the vacuum generator 20, the pressure in the second vacuum zone 12 can be adjusted so that the pressure in the first vacuum zone 11 of the carrier disk 10 is not less than the pressure in the second vacuum zone 12, that is, the pressure on the periphery of the carrier disk 10 is less than the pressure on the inner side. Thus, contaminants generated during the semiconductor process, such as carbon dust generated on the back side of the wafer, will not flow back to the front side of the wafer carried on the carrier disk 10 under the effect of the aforementioned pressure difference, thereby reducing front-side contamination of the wafer and improving product yield.

[0033] It is understood that the main function of the vacuum generator 20 is to generate the required negative pressure environment by rapidly evacuating air, so as to adsorb and fix the wafer on the carrier disk 10. This negative pressure environment can stabilize the carrier disk 10 and prevent the workpiece from being displaced or damaged due to vibration or airflow disturbance during processing.

[0034] For example, vacuum generator 20 may include a mechanical vacuum pump, such as a rotary vane vacuum pump or a diaphragm vacuum pump. A rotary vane vacuum pump creates a sealed cavity between rotating vanes and the pump casing, achieving pumping through changes in gas volume. A diaphragm vacuum pump utilizes the reciprocating motion of a flexible diaphragm for pumping, making it suitable for extracting corrosive gases and vapors.

[0035] For example, the vacuum generator 20 may also include a gas jet vacuum generator 20, such as a jet pump, which creates negative pressure by injecting a high-speed gas flow into the inlet. Jet pumps are simple in structure, small in size, and easy to use. For example, the vacuum generator 20 may also include a molecular pump, such as a turbomolecular pump or a diffusion pump; a turbomolecular pump uses a high-speed rotating impeller and friction to gradually compress molecules to the exhaust port, and is mainly used in high vacuum and ultra-high vacuum environments. A diffusion pump uses a high-speed vapor flow to push gas molecules from a low-pressure region to a high-pressure region, and is often used in conjunction with other pumps to achieve ultra-high vacuum.

[0036] For example, vacuum generator 20 may also include an adsorption pump, such as a molecular sieve pump, which uses molecular sieve material to adsorb gas to achieve a vacuum state and is suitable for pumping low molecular weight gases. For example, vacuum generator 20 may also include a liquid ring vacuum pump, which uses a liquid (typically water or oil) to form a closed ring to pump gas, suitable for pumping gases and vapors. For example, vacuum generator 20 may also include a cryogenic pump, which removes gas by cooling it to its condensation or solidification point. For example, vacuum generator 20 may also include an electronic vacuum pump, which eliminates gas molecules in the vacuum system by utilizing the collision effect between high-energy electrons and gas molecules. For example, vacuum generator 20 may also include an ion pump, which ionizes gas molecules and adsorbs them onto an anode. Ion pumps are typically used in conjunction with turbomolecular pumps to maintain a high vacuum state for extended periods.

[0037] For example, the vacuum generator 20 is positioned below the support plate 10.

[0038] For example, the vacuum generator 20 can be connected to the first vacuum zone 11 and the second vacuum zone 12 on the carrier plate 10 via pipelines.

[0039] In some embodiments, the wafer fixing device further includes a first vacuum passage 41 and a second vacuum passage 42; the first end of the first vacuum passage 41 is connected to the first vacuum zone 11 of the carrier disk 10; the first vacuum passage 41 provides a stable negative pressure environment for the wafer through an efficient evacuation process, ensuring that it is firmly fixed during processing and preventing displacement and vibration. The first end of the second vacuum passage 42 is connected to the second vacuum zone 12 of the carrier disk 10; wherein, a regulating valve 30 is disposed on the second vacuum passage 42.

[0040] In the wafer fixing device of the above embodiment, the wafer fixing device has independent first and second vacuum passages 42, which can adjust the adsorption strength under different process conditions, thereby improving the stability of the wafer during processing. Even in high temperature or vibration environments, the wafer can remain fixed. By adjusting the valve 30, the vacuum level of the second vacuum passage 42 can be precisely controlled, allowing the entire system to adapt to different operational needs. This flexibility can effectively cope with changes in various processing techniques and reduce the risk of contamination caused by unstable airflow. At the same time, the design of the second vacuum passage 42 helps to control the influence of the external environment on the processing area. By adjusting the valve 30 in real time, external contaminants can be prevented from penetrating into the first vacuum zone 11, thereby protecting the cleanliness of the wafer and improving product yield. Furthermore, configuring the valve 30 in the second vacuum passage 42 makes operation and maintenance simpler. Operators only need to monitor and adjust the valve 30, without having to frequently access the complex piping system, reducing the failure rate and operational risks.

[0041] It is understood that the regulating valve 30 can be used to control parameters such as flow rate, pressure, and temperature of fluids (such as liquids or gases). For example, the regulating valve 30 may include ball valves, gate valves, butterfly valves, control valves, needle valves, solenoid valves, pneumatic valves, turbine valves, safety valves, and flow control valves. For instance, the opening and closing part of a ball valve is a sphere, offering advantages such as large flow rate, good sealing performance, and compact structure. When the ball rotates 90 degrees, the fluid can be fully opened or closed. Gate valves use the up-and-down movement of a valve disc to open and close the fluid, suitable for fully open or fully closed states, with a straight fluid path and low pressure loss. Butterfly valves typically use a rotating disc as the valve body, offering relatively simple flow control and rapid opening and closing. The regulating valve 30 (control valve) can automatically adjust parameters such as flow rate and pressure according to a set control signal. Needle valves achieve precise flow control through a sharp valve core, suitable for regulating small flow rates. Solenoid valves use electromagnetic force to open and close the valve, offering rapid response and suitable for remote control. Pneumatic valves use compressed air as power to perform opening and closing operations, offering fast response and suitability for rapid switching; turbine valves, by adjusting the shape of the valve insert, provide stable flow control capabilities and perform well under low flow conditions. Flow control valves are used to control the flow rate of fluids, are typically adjustable, and offer high control precision.

[0042] In some embodiments, the wafer fixing device further includes a main vacuum passage 43; the first end of the main vacuum passage 43 is connected to the second end of the first vacuum passage 41 and the second end of the second vacuum passage 42, respectively, and the second end of the main vacuum passage 43 is connected to the vacuum generator 20.

[0043] like Figure 2As shown, the main vacuum passage 43 can be a vertical pipe extending along the direction perpendicular to the support plate 10; the first vacuum passage 41 can include a vertical pipe extending along the direction perpendicular to the support plate 10 and a horizontal pipe extending along the direction parallel to the support plate 10; correspondingly, the second vacuum passage 42 can also include a vertical pipe extending along the direction perpendicular to the support plate 10 and a horizontal pipe extending along the direction parallel to the support plate 10. The top end of the vertical pipe of the first vacuum passage 41 is connected to the first vacuum zone 11, the vertical pipe of the second vacuum passage 42 is connected to the second vacuum zone 12, the horizontal pipe of the first vacuum passage is connected to the horizontal pipe of the second vacuum passage 42, and both are connected to the main vacuum passage 43.

[0044] For example, the regulating valve 30 can be installed on the vertical pipe of the second vacuum passage 42, which makes it easier for the operator to adjust the pressure of the second vacuum zone 12 through the regulating valve 30, thereby adjusting the vacuum level of the second vacuum zone 12.

[0045] In some embodiments, the carrier disk 10 is circular; the first vacuum region 11 has a first preset outer diameter; the second vacuum region 12 has a second preset outer diameter; the second preset outer diameter is larger than the first preset outer diameter. By setting different first preset outer diameters and second preset outer diameters, the dimensions of the first vacuum region 11 and the second vacuum region 12 can be adjusted to better match wafers of different sizes or different warpages.

[0046] In some embodiments, the range of the first preset outer diameter includes 3.5 inches to 4.5 inches. For example, the range of the first preset outer diameter includes 3.5 inches, 4 inches, or 4.5 inches, etc.

[0047] In some embodiments, the range of the second preset outer diameter includes 5.5 inches to 6.5 inches. For example, the range of the second preset outer diameter includes 5.5 inches, 6 inches, or 6.5 inches, etc.

[0048] Figure 3 Figure (a) illustrates the distribution of contaminants on the wafer surface during semiconductor processing using a conventional machine in a related art. Figure 3 Figure (b) illustrates the contaminant distribution on the wafer surface during semiconductor processing using the wafer fixing device in an embodiment of this application. Please refer to... Figure 3 As can be seen from Figures (a) and (b) in this application, when the wafer fixing device in the embodiment of this application is used to perform semiconductor processes, the contaminants on the wafer surface are significantly reduced.

[0049] Please refer to Table 1 for understanding. The applicant has demonstrated through experiments that when using the wafer fixing device of this application to perform laser annealing on silicon carbide substrate wafers, the amount of carbon powder added to the wafer surface after the process is completed is significantly less than the amount of carbon powder added in related technologies.

[0050] Table 1

[0051] Carbon powder increase amount of the embodiment of the present application Carbon powder increase amount of the related art 147 377

[0052] Please refer to Figure 4 According to some embodiments, this application also provides a wafer processing apparatus, which includes the wafer fixing device in any of the above embodiments.

[0053] Since the wafer processing equipment includes the wafer fixing device in any of the above embodiments, the wafer processing equipment in the embodiments of this application also has the beneficial effects of the wafer fixing device, and will not be repeated here.

[0054] In some embodiments, the wafer processing equipment further includes an airflow hood 50 and a gas delivery device 60; the airflow hood 50 is disposed directly above the support plate 10; the gas delivery device 60 is disposed at the top edge of the airflow hood 50 and is used to deliver a preset gas into the airflow hood 50.

[0055] In the wafer processing equipment of the above embodiment, the airflow hood 50 can control the airflow distribution. Through the gas delivery device 60 at the top, a specific preset gas can be uniformly delivered into the hood to form a stable airflow environment. This airflow regulation can effectively direct the airflow to the carrier tray 10, ensuring that the wafer is subjected to uniform gas action during processing. Furthermore, the airflow hood 50 can prevent external contaminants (such as dust, particulate matter, and chemical gases) from directly contacting the wafer surface, helping to improve wafer yield, thereby avoiding defects and ensuring the quality of the final product. Simultaneously, a relatively constant temperature and pressure can be maintained inside the airflow hood 50. Through appropriate gas delivery device 60 and airflow management, temperature deviations can be avoided during processing, thereby ensuring wafer consistency.

[0056] It is understood that the gas delivery device 60 can continuously deliver various preset gases (such as nitrogen, hydrogen, argon, etc.) into the airflow hood 50. These gases can be used for cleaning, cooling, or reaction processes to ensure processing stability. In processing that requires the participation of multiple gases, the gas delivery device 60 can effectively mix and distribute different gases to provide the required gaseous environment to meet specific chemical reactions or physical processes.

[0057] For example, the gas delivery device 60 may integrate a flow meter and a regulating valve 30, allowing operators to adjust the gas flow rate and composition in real time according to different processing requirements to optimize processing conditions.

[0058] In some embodiments, the carrier plate 10 is circular, and the airflow hood 50 is a hollow cylinder, thereby forming a closed or semi-closed space that can effectively control the airflow and gas composition in the processing environment. For example, the outer diameter of the airflow hood 50 is larger than the outer diameter of the carrier plate 10.

[0059] In some embodiments, there is a preset distance between the bottom surface of the airflow shroud 50 and the top surface of the support plate 10. For example, the preset distance ranges from 5 mm to 8 mm. For instance, the preset distance can be 5 mm, 6 mm, 7 mm, or 8 mm, etc.

[0060] In some embodiments, the airflow shroud 50 has a preset height. For example, the preset height ranges from 180mm to 220mm. For instance, the preset height range can be 180mm, 190mm, 200mm, 210mm, or 220mm, etc.

[0061] In some embodiments, the wafer processing equipment further includes a laser galvanometer 70, which is positioned above the airflow hood 50 and moves horizontally along the direction parallel to the top surface of the carrier disk 10. It is understood that the laser galvanometer 70 can quickly adjust the trajectory of the laser beam to ensure that the laser accurately illuminates a specific location on the carrier disk 10. This precise positioning facilitates the smooth execution of various processing techniques (such as laser annealing, ablation, photolithography, etc.). The laser galvanometer 70 can move horizontally along the direction parallel to the top surface of the carrier disk 10. Through the rapid movement of the laser galvanometer 70, the laser beam can quickly scan the entire surface of the carrier disk 10, effectively improving processing speed and reducing production cycle time. Furthermore, the laser galvanometer 70 can quickly and precisely control the movement path of the laser beam, ensuring that the laser can accurately position every design point on the wafer, thereby improving the overall processing accuracy. When patterning of the wafer surface is required, the laser galvanometer 70 can precisely etch or ablate the material according to a preset design pattern, achieving fine processing. Because the laser galvanometer 70 can control the precise position and efficiency of the laser beam, it can avoid excessive heat accumulation in specific areas, thereby reducing the risk of wafer thermal damage. Furthermore, those skilled in the art can program the laser galvanometer 70 to quickly switch between different processing modes and processes, adapting to various processing requirements. In addition, the laser galvanometer 70, positioned above the airflow hood 50, can utilize the controlled environment created by the airflow hood 50 to reduce interference from dust and contaminants that may occur during laser processing, further improving processing quality.

[0062] Please combine Figure 2 and Figure 4To understand the details, the wafer holding device includes a carrier plate 10, a vacuum generator 20, and a regulating valve 30. The carrier plate 10 is used to hold the wafer and includes a first vacuum zone 11 and a second vacuum zone 12, with the second vacuum zone 12 surrounding the first vacuum zone 11. The vacuum generator 20 is connected to both the first vacuum zone 11 and the second vacuum zone 12 of the carrier plate 10. The regulating valve 30 is located between the second vacuum zone 12 and the vacuum generator 20 and is used to regulate the pressure within the second vacuum zone 12. The pressure within the first vacuum zone 11 is not less than the pressure within the second vacuum zone 12.

[0063] In the wafer processing equipment of the above embodiment, by providing an adjusting valve 30 between the second vacuum zone 12 of the carrier tray 10 and the vacuum generator 20, the pressure in the second vacuum zone 12 can be adjusted so that the pressure in the first vacuum zone 11 of the carrier tray 10 is not less than the pressure in the second vacuum zone 12, that is, the pressure on the periphery of the carrier tray 10 is less than the pressure on the inner side. Thus, contaminants generated during the semiconductor process, such as carbon powder generated on the back side of the wafer, will not flow back to the front side of the wafer carried on the carrier tray 10 under the effect of the aforementioned pressure difference, thereby reducing front-side contamination of the wafer and improving product yield.

[0064] In some embodiments, the wafer fixing device further includes a first vacuum passage 41 and a second vacuum passage 42; the first end of the first vacuum passage 41 is connected to the first vacuum zone 11 of the carrier disk 10; the first vacuum passage 41 provides a stable negative pressure environment for the wafer through an efficient evacuation process, ensuring that it is firmly fixed during processing and preventing displacement and vibration. The first end of the second vacuum passage 42 is connected to the second vacuum zone 12 of the carrier disk 10; wherein, a regulating valve 30 is disposed on the second vacuum passage 42.

[0065] In the wafer processing equipment of the above embodiments, the wafer fixing device has independent first and second vacuum passages 42, which can adjust the adsorption strength under different process conditions, thereby improving the stability of the wafer during processing. Even in high-temperature or vibration environments, the wafer can remain fixed. The vacuum level of the second vacuum passage 42 can be precisely controlled by the regulating valve 30, allowing the entire system to adapt to different operational needs. This flexibility effectively addresses changes in various processing techniques and reduces the risk of contamination caused by unstable airflow. Simultaneously, the design of the second vacuum passage 42 helps control the impact of the external environment on the processing area. Real-time adjustment of the regulating valve 30 prevents external contaminants from penetrating into the first vacuum zone 11, thereby protecting the cleanliness of the wafer and improving product yield. Furthermore, configuring the regulating valve 30 in the second vacuum passage 42 simplifies operation and maintenance. Operators only need to monitor and adjust the regulating valve 30, without frequent contact with the complex piping system, reducing failure rates and operational risks.

[0066] In some embodiments, the wafer fixing device further includes a main vacuum passage 43; the first end of the main vacuum passage 43 is connected to the second end of the first vacuum passage 41 and the second end of the second vacuum passage 42, respectively, and the second end of the main vacuum passage 43 is connected to the vacuum generator 20.

[0067] like Figure 2 As shown, the main vacuum passage 43 can be a vertical pipe extending along the direction perpendicular to the support plate 10; the first vacuum passage 41 can include a vertical pipe extending along the direction perpendicular to the support plate 10 and a horizontal pipe extending along the direction parallel to the support plate 10; correspondingly, the second vacuum passage 42 can also include a vertical pipe extending along the direction perpendicular to the support plate 10 and a horizontal pipe extending along the direction parallel to the support plate 10. The top end of the vertical pipe of the first vacuum passage 41 is connected to the first vacuum zone 11, the vertical pipe of the second vacuum passage 42 is connected to the second vacuum zone 12, the horizontal pipe of the first vacuum passage is connected to the horizontal pipe of the second vacuum passage 42, and both are connected to the main vacuum passage 43.

[0068] For example, the regulating valve 30 can be installed on the vertical pipe of the second vacuum passage 42, which makes it easier for the operator to adjust the pressure of the second vacuum zone 12 through the regulating valve 30, thereby adjusting the vacuum level of the second vacuum zone 12.

[0069] In some embodiments, the carrier disk 10 is circular; the first vacuum region 11 has a first preset outer diameter; the second vacuum region 12 has a second preset outer diameter; the second preset outer diameter is larger than the first preset outer diameter. By setting different first preset outer diameters and second preset outer diameters, the dimensions of the first vacuum region 11 and the second vacuum region 12 can be adjusted to better match wafers of different sizes or different warpages.

[0070] In some embodiments, the range of the first preset outer diameter includes 3.5 inches to 4.5 inches. For example, the range of the first preset outer diameter includes 3.5 inches, 4 inches, or 4.5 inches, etc.

[0071] In some embodiments, the range of the second preset outer diameter includes 5.5 inches to 6.5 inches. For example, the range of the second preset outer diameter includes 5.5 inches, 6 inches, or 6.5 inches, etc.

[0072] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0073] The embodiments described above are merely illustrative of several implementations of this utility model, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the utility model patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this utility model, and these all fall within the protection scope of this utility model. Therefore, the protection scope of this utility model patent should be determined by the appended claims.

Claims

1. A wafer fixing device, characterized in that, include: A carrier disk for carrying wafers, the carrier disk including a first vacuum region and a second vacuum region, the second vacuum region being arranged around the first vacuum region; A vacuum generator is connected to the first vacuum zone and the second vacuum zone of the carrier plate, respectively; A regulating valve is disposed between the second vacuum zone and the vacuum generator, and is used to regulate the pressure in the second vacuum zone; The pressure in the first vacuum zone is not less than the pressure in the second vacuum zone.

2. The wafer fixing device according to claim 1, characterized in that, It also includes a first vacuum passage and a second vacuum passage; The first end of the first vacuum passage is connected to the first vacuum zone of the carrier disk, and the first end of the second vacuum passage is connected to the second vacuum zone of the carrier disk; The regulating valve is located on the second vacuum passage.

3. The wafer fixing device according to claim 2, characterized in that, It also includes the main vacuum path; The first end of the main vacuum passage is connected to the second end of the first vacuum passage and the second end of the second vacuum passage, respectively, and the second end of the main vacuum passage is connected to the vacuum generator.

4. The wafer fixing device according to claim 1, characterized in that, The support plate is circular; The first vacuum region has a first preset outer diameter; The second vacuum region has a second preset outer diameter; The second preset outer diameter is larger than the first preset outer diameter.

5. The wafer fixing device according to claim 4, characterized in that, The first preset outer diameter ranges from 3.5 inches to 4.5 inches; and / or The second preset outer diameter ranges from 5.5 inches to 6.5 inches.

6. A wafer processing equipment, characterized in that, Includes the wafer fixing device as described in any one of claims 1-5.

7. The wafer processing equipment according to claim 6, characterized in that, Also includes: An airflow shroud is positioned directly above the support plate; A gas delivery device is disposed at the top edge of the airflow hood and is used to deliver a preset gas into the airflow hood.

8. The wafer processing equipment according to claim 7, characterized in that, There is a preset distance between the bottom surface of the airflow hood and the top surface of the support plate; The preset spacing ranges from 5mm to 8mm.

9. The wafer processing equipment according to claim 7, characterized in that, The airflow shroud has a preset height; The preset height ranges from 180mm to 220mm.

10. The wafer processing equipment according to claim 7, characterized in that, Also includes: A laser galvanometer is positioned above the airflow hood and moves horizontally in a direction parallel to the top surface of the support plate.

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