High-voltage silicon stack capable of efficiently dissipating heat and effectively isolating static electricity
By using a combination structure of ceramic PCB circuit board, copper balls and ceramic heat-conducting sheet in high-voltage silicon stack, the problems of low heat dissipation efficiency and electrostatic influence of high-voltage silicon stack are solved, achieving efficient heat dissipation and electrostatic isolation, and improving the stability and reliability of the device.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- ANSHAN LEADSUN ELECTRONICS
- Filing Date
- 2025-06-11
- Publication Date
- 2026-04-28
AI Technical Summary
High-voltage silicon stacks have low heat dissipation efficiency and are susceptible to static electricity during operation, which affects the stability and lifespan of the device.
It adopts a combination structure of ceramic PCB circuit board, copper ball and ceramic heat conduction sheet, combined with AMB copper cladding process and potting insulation material to achieve efficient heat dissipation and electrostatic isolation.
It improves heat dissipation efficiency, reduces air cooling resistance, effectively isolates static electricity, enhances device stability and reliability, and simplifies the structure.
Smart Images

Figure CN224178593U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of high-voltage silicon stack technology, specifically a high-voltage silicon stack that provides efficient heat dissipation and effective static electricity isolation. Background Technology
[0002] High-voltage silicon diode stacks, as important high-voltage rectifier devices, are widely used in high-voltage power supplies, high-voltage rectifiers, and other equipment. They can perform functions such as rectification and filtering, voltage transformation, and voltage multiplication / boosting in circuits, while indirectly enhancing the system's isolation and protection capabilities through insulation design. High-voltage silicon diode stacks are typically composed of multiple rectifier diodes connected in series, or multiple single-chip diodes meeting parameter requirements are stacked, sintered, and packaged into an integrated structure. During operation, the unidirectional conductivity of the diodes is utilized to rectify sinusoidal alternating current into unidirectional direct current, ensuring that the current flows in only one direction. In the circuit, the diode characteristics in the high-voltage silicon diode stack are used to prevent reverse current from flowing, protecting other components in the circuit from damage by reverse voltage, thus providing a certain degree of isolation and protection.
[0003] However, high-voltage silicon stacks generate a large amount of heat during operation. Traditional heat dissipation methods often use heat sinks for air cooling, but these methods suffer from low heat dissipation efficiency, complex structures, and large sizes. In addition, high-voltage silicon stacks generate static electricity during operation, which in turn affects the stability and lifespan of the device. Utility Model Content
[0004] In order to overcome the shortcomings of the prior art, this utility model provides a high-voltage silicon stack that can efficiently dissipate heat and effectively isolate static electricity, which can both dissipate heat efficiently and effectively isolate static electricity.
[0005] To achieve the above objectives, the present invention adopts the following technical solution:
[0006] A high-voltage silicon stack with efficient heat dissipation and effective static electricity isolation includes a ceramic PCB circuit board, a high-voltage diode, a ceramic heat-conducting sheet, and a copper ball; the high-voltage diode is fixed to the top and bottom layers of the ceramic PCB circuit board, the copper ball is fixed to the high-voltage diode, and the ceramic heat-conducting sheet is fixed between the copper ball and the high-voltage diode.
[0007] Furthermore, multiple rows of high-voltage diodes are mounted on a ceramic PCB circuit board, with each row of high-voltage diodes arranged at equal intervals and adjacent rows of high-voltage diodes arranged alternately.
[0008] Furthermore, the copper spheres are double spheres, and are arranged symmetrically.
[0009] Furthermore, the two spheres are arranged symmetrically, one above the other.
[0010] Furthermore, it also includes potting insulating material, which is filled between the ceramic PCB circuit board, the high-voltage diode, the ceramic heat-conducting sheet, and the copper ball.
[0011] Furthermore, it also includes an electrode nut, which is fixed to the ceramic PCB circuit board.
[0012] Furthermore, the electrode nut is a brass electrode pre-embedded nut.
[0013] Compared with the prior art, the present invention has at least the following technical effects or advantages:
[0014] 1. This utility model uses a ceramic PCB circuit board as the mounting base. The ceramic PCB has excellent insulation and high-temperature thermal conductivity and heat dissipation characteristics. The high-voltage diode is soldered onto the ceramic PCB board and has a high-voltage rectification function. The copper ball is connected to the high-voltage diode through AMB copper-clad process. The copper ball has good thermal conductivity, increasing heat capacity and heat dissipation area, and can quickly conduct heat to the outside. The spherical structure can effectively homogenize the electric field and reduce air cooling resistance. The ceramic heat-conducting sheet is installed between the copper ball and the high-voltage diode, effectively isolating static electricity, preventing the influence of static electricity on the device, and has low thermal resistance and efficient heat conduction.
[0015] 2. The copper spheres of this utility model are double spheres, arranged symmetrically at the top and bottom. The two copper spheres are arranged in a specific geometric center symmetrical manner, which effectively increases the physical heat dissipation surface, homogenizes the electric field, reduces air cooling resistance, and the internal copper core can quickly extract, conduct, and dissipate heat from the chip end of the high-voltage diode.
[0016] 3. The brass electrode pre-embedded nut of this utility model is pre-embedded on the ceramic PCB board for connecting external circuits.
[0017] 4. This utility model uses potting insulating material to fill the space between the ceramic PCB board, components, ceramic heat-conducting sheet, and double copper balls, providing insulation protection and mechanical fixation. This simplifies the structure and improves reliability. Attached Figure Description
[0018] Figure 1 This is a three-dimensional structural diagram of the present invention.
[0019] Figure 2 This is a top view illustrating the structure of this utility model.
[0020] Figure 3 This is a three-dimensional structural diagram of the copper ball and high-voltage diode of this utility model.
[0021] Figure 4 This is a schematic front view of the structure of the copper ball and high-voltage diode of this utility model.
[0022] Figure 5 yes Figure 4 Sectional view along direction B.
[0023] In the picture:
[0024] 1. Ceramic PCB circuit board; 2. High voltage diode; 3. Ceramic heat-conducting sheet; 4. Copper ball; 5. Brass electrode pre-embedded nut. Detailed Implementation
[0025] The embodiments of this utility model are described in detail below. To make the objectives, technical solutions, and advantages of the embodiments of this utility model clearer, the technical solutions of the embodiments of this utility model will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this utility model, and not all embodiments. The following description of at least one exemplary embodiment is merely illustrative and is in no way intended to limit this utility model or its application or use. Based on the embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this utility model.
[0026] In the description of this utility model, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "axial", "radial", "circumferential", etc., indicating the orientation or positional relationship are based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this utility model and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this utility model.
[0027] In the description of this utility model, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "joining" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model based on the specific circumstances.
[0028] In the description of this utility model, it should be noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the exemplary embodiments according to this utility model. As used herein, unless the context clearly indicates otherwise, the singular form is also intended to include the plural form. Furthermore, it should be understood that when the terms "comprising" and / or "including" are used in this specification, they indicate the presence of features, steps, operations, devices, components, and / or combinations thereof.
[0029] Unless otherwise specifically stated, the relative arrangement, numerical expressions, and values of the components and steps described in these embodiments do not limit the scope of this invention. It should also be understood that, for ease of description, the dimensions of the various parts shown in the drawings are not drawn to actual scale. Techniques, methods, and devices known to those skilled in the art may not be discussed in detail, but where appropriate, such techniques, methods, and devices should be considered part of the specification. In all examples shown and discussed herein, any specific values should be interpreted as merely exemplary and not as limitations. Therefore, other examples of exemplary embodiments may have different values. It should be noted that similar reference numerals and letters in the following drawings denote similar items; therefore, once an item is defined in one drawing, it need not be further discussed in subsequent drawings.
[0030] Furthermore, it should be noted that the use of terms such as "first" and "second" to define components is merely for the purpose of distinguishing the corresponding components. Unless otherwise stated, the above terms have no special meaning and therefore cannot be construed as limiting the scope of protection of this utility model.
[0031] like Figures 1-5 As shown, a high-voltage silicon stack with efficient heat dissipation and effective static electricity isolation includes a ceramic PCB circuit board 1, a high-voltage diode 2, a ceramic heat-conducting sheet 3, a copper ball 4, and a brass electrode pre-embedded nut 5.
[0032] The ceramic PCB circuit board 1 serves as the mounting reference and has excellent insulation and high-temperature thermal conductivity and heat dissipation properties.
[0033] High-voltage diode 2 is soldered onto ceramic PCB board 1 and has high-voltage rectification function.
[0034] In this embodiment, the high-voltage diodes 2 are fixed to the top and bottom layers of the ceramic PCB circuit board. Three rows of high-voltage diodes 2 are mounted on the upper surface of the ceramic PCB circuit board 1, with each row of high-voltage diodes 2 equally spaced and adjacent rows of high-voltage diodes 2 staggered. Multiple rows of high-voltage diodes 2 are mounted on the lower surface of the ceramic PCB circuit board 1.
[0035] Copper sphere 4 is a double sphere, symmetrically arranged vertically. The two copper spheres are arranged in a specific geometric center symmetry, which effectively increases the physical heat dissipation surface, homogenizes the electric field, reduces air cooling resistance, and the internal copper core can quickly extract, conduct, and dissipate heat from the chip end of the high-voltage diode.
[0036] The dual copper sphere structure is connected to the high-voltage diode 2 via AMB copper-clad bonding technology. The copper sphere 4 has good thermal conductivity, increasing heat capacity and heat dissipation area, enabling rapid heat transfer to the outside. The spherical structure can effectively homogenize the electric field and reduce air resistance during air cooling.
[0037] The upper surface of the ceramic heat sink 3 is connected to the copper ball 4 via an AMB copper-clad process, and the lower surface of the ceramic heat sink 3 is connected to the high-voltage diode 2 via an AMB copper-clad process. The ceramic heat sink 3 is installed between the copper ball 4 and the high-voltage diode 2 for heat conduction, electrostatic isolation, and to prevent the influence of static electricity on the device.
[0038] Two brass electrodes and nuts 5 are pre-embedded on the ceramic PCB circuit board 1 for connecting external circuits.
[0039] After the ceramic PCB circuit board 1, high voltage diode 2, ceramic heat-conducting sheet 3, copper ball 4 and brass electrode embedded nut 5 are installed, potting insulating material is used to fill the space between the ceramic PCB circuit board 1, high voltage diode 2, ceramic heat-conducting sheet 3, copper ball 4 and brass electrode embedded nut 5 to ensure insulation and mechanical fixation.
[0040] The structural advantages of this utility model are as follows:
[0041] 1. High-efficiency heat dissipation: The double copper ball structure has excellent thermal conductivity, which increases heat capacity and enables rapid heat transfer to the outside, improving heat dissipation efficiency. The electric field homogenization effect reduces air resistance in air-cooled systems, allowing for large-area heat dissipation.
[0042] 2. Electrostatic isolation and homogenized electric field: The ceramic heat-conducting sheet effectively isolates static electricity, preventing the influence of static electricity on the device. It has low structural thermal resistance and high-efficiency heat conduction.
[0043] 3. Simplified Structure: By filling with potting insulating material, the structure is simplified and reliability is improved.
[0044] 4. High temperature resistance: The ceramic PCB circuit board 1 has good high temperature resistance and is suitable for high temperature environments.
[0045] 5. Reliable mechanical protection: The ceramic heat-conducting plate 3 is installed between the copper ball 4 and the high-voltage diode 2. It is not only insulated but also has high mechanical strength. It can buffer the mechanical stress between the copper ball 4 and the high-voltage diode 2 and reduce the risk of damage caused by vibration, impact and other factors.
[0046] The above description is only a preferred embodiment of the present utility model, but the protection scope of the present utility model is not limited thereto. Any equivalent substitutions or changes made by those skilled in the art within the technical scope disclosed in the present utility model, based on the technical solution and the inventive concept of the present utility model, should be included within the protection scope of the present utility model.
Claims
1. A high-voltage silicon stack with efficient heat dissipation and effective electrostatic isolation, characterized in that: Includes ceramic PCB circuit boards, high-voltage diodes, ceramic heat-conducting sheets, and copper balls; The high-voltage diode is fixed to the top and bottom layers of the ceramic PCB circuit board, the copper ball is fixed to the high-voltage diode, and the ceramic heat-conducting sheet is fixed between the copper ball and the high-voltage diode.
2. The high-voltage silicon stack with high efficiency in heat dissipation and effective electrostatic isolation according to claim 1, characterized in that: The high-voltage diodes are mounted in multiple rows on a ceramic PCB circuit board. Each row of high-voltage diodes is arranged at equal intervals, and adjacent rows of high-voltage diodes are staggered.
3. The high-voltage silicon stack with high efficiency in heat dissipation and effective electrostatic isolation according to claim 1, characterized in that: The copper spheres are a pair and are arranged symmetrically.
4. The high-voltage silicon stack with high efficiency in heat dissipation and effective electrostatic isolation according to claim 3, characterized in that: The two spheres are arranged symmetrically, one above the other.
5. A high-voltage silicon stack with efficient heat dissipation and effective electrostatic isolation according to claim 1, characterized in that: It also includes potting insulation material, which is filled between the ceramic PCB circuit board, high voltage diode, ceramic heat-conducting sheet and copper ball.
6. The high-voltage silicon stack with high efficiency in heat dissipation and effective electrostatic isolation according to claim 1, characterized in that: It also includes electrode nuts, which are fixed to the ceramic PCB circuit board.
7. A high-voltage silicon stack with efficient heat dissipation and effective electrostatic isolation according to claim 6, characterized in that: The electrode nut is a brass electrode pre-embedded nut.