Hot filament CVD (chemical vapor deposition) diamond film growing device

Abstract

The utility model discloses a hot filament CVD diamond film growing device which comprises a growing chamber, a substrate is arranged in the growing chamber, a water cooling part is arranged below the substrate, an electrode is arranged above the substrate, the electrode is connected with a hot filament, a water inlet pipe and a water outlet pipe are connected below the water cooling part, and the water inlet pipe is connected with the water outlet pipe. The tail end of the water inlet pipe is connected with a cooling water pump, the right side of the cooling water pump is connected with a cooling water pool outlet pipe, the right side of the cooling water pool outlet pipe is connected with a cooling water pool, the left side of the bottom of the growth chamber is connected with a vacuum inlet pipe, and the left side of the vacuum inlet pipe is connected with a vacuum pump; the left side of the vacuum pump is connected with a vacuum outlet pipe, the top of the growth chamber is provided with a gas distribution plate, and a hydrogen outlet pipe is also connected with a pressure relief pipe, a blow-off pipe and a carbon-containing gas pipe. According to the utility model, the problems in the prior art can be effectively solved, and better economic benefits can be created.

Description

Technical Field

[0001] This application relates to the technical field of diamond production, and specifically relates to a hot-wire CVD diamond film growth device. Background Art

[0002] In the process of diamond film production, a large amount of hydrogen and other mixed gases are required. Especially, the mixture of oxygen and hydrogen is extremely prone to explosion under a specific ratio (4%-75%). In the existing technologies, great attention is paid to how to evacuate hydrogen in the equipment, but the hydrogen remaining in the hydrogen pipeline after the system stops is often ignored. These remaining hydrogen poses potential safety hazards for the restart of the diamond film growth device. In addition, the cooling efficiency of the cooling part used in the existing diamond film growth device is relatively low and cannot meet the current requirements of diamond film growth. Utility Model Content

[0003] In order to solve the above technical problems, based on the rich experience accumulated in the technical field of diamond production, the inventor has developed a hot-wire CVD diamond film growth device.

[0004] To achieve the above object, the present utility model provides the following technical solution: A hot-wire CVD diamond film growth device, including a growth chamber, a substrate is arranged in the growth chamber, a water-cooling part is arranged below the substrate, the water-cooling part is provided with a bending part for increasing the cooling area, an electrode is arranged above the substrate, the electrode is connected with a hot wire, the distance between the hot wire and the substrate is 10-15 mm, a water inlet pipe and a water outlet pipe are connected below the water-cooling part, the end of the water inlet pipe is connected with a cooling water pump, the right side of the cooling water pump is connected with a cooling water tank outlet pipe, the right side of the cooling water tank outlet pipe is connected with a cooling water tank, the left side of the bottom of the growth chamber is connected with a vacuum inlet pipe, the left side of the vacuum inlet pipe is connected with a vacuum pump, the left side of the vacuum pump is connected with a vacuum outlet pipe, a gas distribution plate is arranged at the top of the growth chamber, a hydrogen outlet pipe is connected to the top of the gas distribution plate, the left end of the hydrogen outlet pipe is connected with a hydrogen storage tank, and a pressure relief pipe, a sewage pipe and a carbon-containing gas pipe are also connected to the hydrogen outlet pipe.

[0005] Further, the carbon-containing gas pipe can pass carbon-containing gas, and the carbon-containing gas is any one of methane, ethane, propane, butane, ethylene and acetylene.

[0006] Further, distribution holes for uniformly distributing gas are formed on the gas distribution plate, and the distribution holes are circular.

[0007] Further, the water-cooling part is provided with a bending part for increasing the cooling area, and the bending part is arranged in a "ji" shape.

[0008] Further, a circulation fan is installed on the right side of the growth chamber, and a circulation pipe is connected to the circulation fan.

[0009] Further, a water inlet valve is installed on the water inlet pipe, and a cooling water tank valve is installed on the outlet pipe of the cooling water tank.

[0010] Further, a vacuum inlet valve is installed on the vacuum inlet pipe, and a vacuum outlet valve is installed on the vacuum outlet pipe.

[0011] Further, a hydrogen outlet valve is installed on the hydrogen outlet pipe, and a carbon-containing gas valve is installed on the carbon-containing gas pipe.

[0012] Further, a pressure relief valve is installed on the pressure relief pipe, and a drain valve is installed on the drain pipe. The extending direction of the pressure relief pipe is upward, and the extending direction of the drain pipe is downward.

[0013] Further, in order to improve the overall automation efficiency of the equipment, the hydrogen outlet valve, the carbon-containing gas valve and the pressure relief valve are automatic control valves.

[0014] Compared with the prior art, the utility model has the following beneficial effects:

[0015] 1. By setting devices such as a vacuum pump, a pressure relief valve and a drain valve, after the system stops, the vacuum pump can be started to perform a negative pressure pumping operation on the growth chamber and the hydrogen pipeline connected thereto. Connect the nitrogen pipeline to the pressure relief pipe, so that nitrogen can replace the growth chamber and the hydrogen pipeline. After the replacement is completed, notify the analyst to detect the gas in the growth chamber and the hydrogen pipeline to ensure that there is no oxygen, so that the residual hydrogen in the pipeline after the system stops can be replaced completely, ensuring the safety of the equipment. If a sudden situation such as a power outage occurs during normal production, the pressure relief valve can be opened in time to discharge the residual hydrogen in the hydrogen pipeline,尽可能减少管道中氢气的残存量,及时安排人员对管道进行氮气置换,从而保证设备安全。

[0016] 2. By providing a bent portion for increasing the cooling area in the water cooling part, the bent portion is arranged in a "Ji" shape, which can effectively improve the cooling efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 It is a schematic structural diagram of the utility model.

[0018] Figure 2 It is a schematic diagram of the growth chamber.

[0019] Figure 3 It is a schematic diagram of the water cooling part.

[0020] Figure 4 It is a schematic diagram of the gas distribution plate.

[0021] Reference numerals: 1. Growth chamber; 2. Electrode; 3. Hot wire; 4. Substrate; 5. Water cooling section; 501. Bending section; 6. Water inlet pipe; 7. Water inlet valve; 8. Cooling water pump; 9. Cooling water tank outlet pipe; 10. Cooling water tank valve; 11. Cooling water tank; 12. Water outlet pipe; 13. Circulating fan; 14. Circulating pipe; 15. Vacuum inlet pipe; 16. Vacuum inlet valve; 17. Vacuum pump; 18. Vacuum outlet pipe; 19. Vacuum outlet valve; 20. Hydrogen storage tank; 21. Hydrogen outlet pipe; 22. Hydrogen outlet valve; 23. Carbon-containing gas pipe; 24. Carbon-containing gas valve; 25. Pressure relief pipe; 26. Pressure relief valve; 27. Drain pipe; 28. Drain valve; 29. ​​Gas distribution plate; 2901. Distribution hole. Detailed Implementation

[0022] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. The components of the embodiments of this application described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.

[0023] Therefore, the following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely to illustrate selected embodiments of the application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.

[0024] It should be noted that similar labels and letters in the following figures indicate similar items. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures.

[0025] In the description of this application, it should be noted that the terms "upper," "lower," and "left" are used interchangeably.

[0026] The orientation or positional relationship indicated by terms such as "right" is based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship commonly used when the product of this application is in use. It is used solely for the convenience of describing this application and for simplification, and does not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, it should not be construed as a limitation on this application. Furthermore, the terms "first," "second," "third," etc., are used only to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0027] like Figures 1-4As shown in the figure, a hot wire CVD diamond film growth device includes a growth chamber 1. A substrate 4 is arranged inside the growth chamber 1. A water cooling part 5 is arranged below the substrate 4. An electrode 2 is arranged above the substrate 4. The electrode 2 is connected with a hot wire 3. The distance between the hot wire 3 and the substrate 4 is 10 - 15 mm. A water inlet pipe 6 and a water outlet pipe 12 are connected below the water cooling part 5. The end of the water inlet pipe 6 is connected with a cooling water pump 8. The right side of the cooling water pump 8 is connected with a cooling water tank outlet pipe 9. The right side of the cooling water tank outlet pipe 9 is connected with a cooling water tank 11. The left side of the bottom of the growth chamber 1 is connected with a vacuum inlet pipe 15. The left side of the vacuum inlet pipe 15 is connected with a vacuum pump 17. The left side of the vacuum pump 17 is connected with a vacuum outlet pipe 18. A gas distribution plate 29 is arranged at the top of the growth chamber 1. The top of the gas distribution plate 29 is connected with a hydrogen outlet pipe 21. The left end of the hydrogen outlet pipe 21 is connected with a hydrogen storage tank 20. A pressure relief pipe 25, a sewage discharge pipe 27 and a carbon-containing gas pipe 23 are also connected to the hydrogen outlet pipe 21.

[0028] In this embodiment, the carbon-containing gas pipe can pass carbon-containing gas, and the carbon-containing gas is any one of methane, ethane, propane, butane, ethylene and acetylene.

[0029] In this embodiment, distribution holes 2901 for uniformly distributing gas are formed on the gas distribution plate 29, and the distribution holes 2901 are circular.

[0030] In this embodiment, the water cooling part 5 is provided with a bending part 501 for increasing the cooling area, and the bending part 501 is arranged in a "ji" shape.

[0031] In this embodiment, a circulation fan 13 is installed on the right side of the growth chamber 1, and a circulation pipe 14 is connected to the circulation fan 13.

[0032] In this embodiment, a water inlet valve 7 is installed on the water inlet pipe 6, and a cooling water tank valve 10 is installed on the cooling water tank outlet pipe 9.

[0033] In this embodiment, a vacuum inlet valve 16 is installed on the vacuum inlet pipe 15, and a vacuum outlet valve 19 is installed on the vacuum outlet pipe 18.

[0034] In this embodiment, a hydrogen outlet valve 22 is installed on the hydrogen outlet pipe 21, and a carbon-containing gas valve 24 is installed on the carbon-containing gas pipe 23.

[0035] In this embodiment, a pressure relief valve 26 is installed on the pressure relief pipe 25, and a sewage discharge valve 28 is installed on the sewage discharge pipe 27.

[0036] In specific operation, the vacuum pump 17 is first started to evacuate the air from the growth chamber 1. Then, the hydrogen outlet valve 22 is opened to introduce hydrogen into the growth chamber 1, performing gas replacement to ensure that the growth chamber 1 is as air-free as possible. The pre-cleaned substrate is placed on the substrate 4. The electrode 2 is connected to the heating power supply to heat the hot wire 3, raising its temperature to approximately 2200–2400°C. The hydrogen outlet valve 22 and the carbon gas valve 24 are opened to introduce hydrogen and methane gas into the growth chamber 1. After mixing, the gases are evenly distributed by the gas distribution plate 29 and begin to react within the growth chamber 1. Once the substrate has grown to the required thickness, the introduction of hydrogen and methane gas is stopped. At this point, the cooling water pump 8 is started to deliver cooling water to the water cooling section 5. The cooling water flows out from the outlet pipe 12 through the bend 501. After the growth chamber 1 has cooled down, the substrate can be removed.

[0037] In order to improve the growth quality during the diamond film growth process, the circulating fan 13 can be started. The starting of the circulating fan 13 can mix the gas and react better, which is beneficial to the growth of diamond film.

[0038] After the system stops, the vacuum pump can be started to create a negative pressure in the growth chamber 1 and its connected hydrogen outlet pipe 21. The nitrogen pipe is then connected to the pressure relief pipe 25, and the hydrogen outlet valve 24 is opened. This allows nitrogen to purify the growth chamber 1 and hydrogen outlet pipe 21. After purging, analysts are notified to test the gas in the growth chamber 1 and hydrogen outlet pipe 21 to ensure it is oxygen-free. In case of power outages or other emergencies during normal production, the pressure relief valve 26 can be opened to release any remaining hydrogen in the hydrogen outlet pipe 21, thus ensuring equipment safety. The nitrogen pipe in this application originates from the boundary area and its end is a rubber hose that can be connected to the pressure relief pipe 25.

[0039] Although high-purity hydrogen is used in this application, moisture may still remain in the hydrogen outlet pipe 21 in areas with low outdoor temperatures. On-site operators can periodically open the drain valve 28 to check for moisture in the pipeline. When opening the drain valve 28, the valve should be opened slowly to avoid pressure fluctuations in the entire hydrogen pipeline.

[0040] The above are merely preferred embodiments of this application and are not intended to limit this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A hot-filament CVD diamond film growth apparatus, characterized in that: It includes a growth chamber, in which a substrate is arranged. Below the substrate, a water-cooling part is provided. The water-cooling part is provided with a bent part for increasing the cooling area. Above the substrate, an electrode is arranged. The electrode is connected with a hot wire. The distance between the hot wire and the substrate is 10 - 15 mm. Below the water-cooling part, a water inlet pipe and a water outlet pipe are connected. The end of the water inlet pipe is connected with a cooling water pump. On the right side of the cooling water pump, a cooling water tank outlet pipe is connected. On the right side of the cooling water tank outlet pipe, a cooling water tank is connected. On the left side of the bottom of the growth chamber, a vacuum inlet pipe is connected. On the left side of the vacuum inlet pipe, a vacuum pump is connected. On the left side of the vacuum pump, a vacuum outlet pipe is connected. On the top of the growth chamber, a gas distribution plate is arranged. On the top of the gas distribution plate, a hydrogen gas outlet pipe is connected. The left end of the hydrogen gas outlet pipe is connected with a hydrogen gas storage tank. The hydrogen gas outlet pipe is also connected with a pressure relief pipe, a sewage discharge pipe and a carbon-containing gas pipe.

2. The hot-filament CVD diamond film growth apparatus according to claim 1, characterized in that: Distribution holes for evenly distributing gas are formed on the gas distribution plate, and the distribution holes are circular.

3. The hot-filament CVD diamond film growth apparatus according to claim 1, characterized in that: The bent part is arranged in a "zigzag" shape.

4. The hot-filament CVD diamond film growth apparatus according to claim 1, characterized in that: A circulation fan is installed on the right side of the growth chamber, and a circulation pipe is connected to the circulation fan.

5. The hot-filament CVD diamond film growth apparatus according to claim 1, characterized in that: A water inlet valve is installed on the water inlet pipe, and a cooling water tank valve is installed on the cooling water tank outlet pipe.

6. The hot-filament CVD diamond film growth apparatus according to claim 1, characterized in that: A vacuum inlet valve is installed on the vacuum inlet pipe, and a vacuum outlet valve is installed on the vacuum outlet pipe.

7. The hot-filament CVD diamond film growth apparatus according to claim 1, characterized in that: A hydrogen gas outlet valve is installed on the hydrogen gas outlet pipe, and a carbon-containing gas valve is installed on the carbon-containing gas pipe.

8. The hot-filament CVD diamond film growth apparatus according to claim 1, characterized in that: A pressure relief valve is installed on the pressure relief pipe, and a sewage discharge valve is installed on the sewage discharge pipe.

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