Wafer heating device and semiconductor manufacturing equipment
By setting up first and second heating units within the heating platform, the spacing between the heating units is reduced, thus solving the problem of uneven heat distribution caused by wide spacing between heater elements. This improves the uniformity of thin film deposition on the wafer surface and the performance of semiconductor devices.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- CHENGDU HIGH-TECH JIN SCI&TECH CO LTD
- Filing Date
- 2025-06-11
- Publication Date
- 2026-05-12
AI Technical Summary
The wide spacing between existing heater elements leads to uneven heat transfer, affecting the temperature distribution on the wafer surface, the uniformity of thin film deposition, and consequently the performance and quality of semiconductor devices.
By setting a first heating unit and a second heating unit inside the heating platform, the distance between the top surface of the heating platform and the heating unit is reduced. This reduces the spacing between the heating units and ensures uniform heat distribution. Materials and structural designs with good thermal conductivity are used to ensure uniform heat transfer.
This improves the uniformity of thin film deposition on the wafer surface, ensuring the performance and quality of semiconductor devices.
Smart Images
Figure CN224227209U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of semiconductor technology, and in particular to a wafer heating device and semiconductor manufacturing equipment. Background Technology
[0002] This section provides only background information relevant to this disclosure and is not necessarily prior art.
[0003] Plasma-enhanced chemical vapor deposition (PECVD) is a commonly used thin film deposition technique in semiconductor manufacturing. In PECVD, aluminum nitride heaters are widely used inside the process chamber to provide a uniform heating environment for the wafer.
[0004] The relatively wide spacing between heater elements between the heating plates of existing heaters leads to uneven heat transfer and temperature differences in different areas of the heater, which affects the uniformity of thin film deposition on the wafer surface and consequently affects the performance and quality of semiconductor devices. Utility Model Content
[0005] The purpose of this invention is to at least solve the problem of temperature differences in heaters caused by the wide spacing between heater elements. This purpose is achieved through the following technical solution:
[0006] The first aspect of this utility model provides a wafer heating device, including a heating platform, a first heating unit, and a second heating unit;
[0007] The heating platform is used to support the wafer and heat the wafer. The heating platform defines a heating cavity. The first heating unit and the second heating unit are spaced apart in the heating cavity along a first direction, which is the vertical direction.
[0008] The wafer heating device of this invention provides a first heating unit and a second heating unit within the heating cavity of a heating platform. The minimum distance between one of the first heating unit and the top surface of the heating platform is less than half the dimension of the heating platform along the first direction. This reduces the distance between the top surface of the heating platform and the heating unit, thereby reducing local temperature deviations caused by differences in thermal conductivity. This allows for a more uniform distribution of heat during the transfer process, improving the uniformity of thin film deposition on the wafer surface and ensuring the performance and quality of semiconductor devices.
[0009] In addition, the wafer heating device according to this utility model may also have the following additional technical features:
[0010] In some embodiments of this utility model, the heating platform includes a base and a heating plate disposed on the top of the base. The heating plate is used for placing the wafer. The first heating unit is spaced apart from the heating plate along the first direction. The first heating unit extends along a second direction, which is perpendicular to the first direction.
[0011] In some embodiments of this utility model, the first heating unit includes a plurality of first heating elements, which are spaced apart along the second direction.
[0012] In some embodiments of this utility model, the spacing between two adjacent first heating elements is the same.
[0013] In some embodiments of this utility model, the first heating unit further includes a first heating rod, which is connected to the first heating element and is used to heat the first heating element.
[0014] In some embodiments of the present invention, the second heating unit includes a plurality of second heating elements, which are spaced apart along the second direction.
[0015] In some embodiments of this utility model, the spacing between two adjacent second heating elements is the same.
[0016] In some embodiments of this utility model, the second heating unit further includes a second heating rod, which is connected to the second heating element and is used to heat the second heating element.
[0017] In some embodiments of this utility model, along the first direction, the first heating unit is disposed above the second heating unit, and the wafer heating device further includes a heat sink, which is spaced between the heating plate and the first heating unit along the first direction, and extends along the second direction.
[0018] Another aspect of this invention provides a semiconductor manufacturing apparatus, including a chamber and a wafer heating device as described in any of the preceding claims, the wafer heating device being disposed inside the chamber. Attached Figure Description
[0019] Various other advantages and benefits will become apparent to those skilled in the art upon reading the following detailed description of preferred embodiments. The accompanying drawings are for illustrative purposes only and are not intended to limit the scope of the invention. Furthermore, the same reference numerals denote the same parts throughout the drawings. In the drawings:
[0020] Figure 1A schematic diagram of the structure of a wafer heating device according to an embodiment of the present invention is shown.
[0021] Figure 2 A schematic diagram of the structure of a semiconductor manufacturing apparatus according to an embodiment of the present invention is shown.
[0022] The attached figures are labeled as follows:
[0023] 1000. Semiconductor manufacturing equipment;
[0024] 100. Wafer heating device; 200. Chamber;
[0025] 1. Heating platform; 11. Base; 111. Heating chamber; 12. Heating plate; 13. Base;
[0026] 2. First heating unit; 21. First heating element; 22. First heating rod;
[0027] 3. Second heating unit; 31. Second heating element; 32. Second heating rod;
[0028] 4. Heat sink;
[0029] 5. Wafers;
[0030] X, first direction;
[0031] Y, the second direction. Detailed Implementation
[0032] Exemplary embodiments of the present disclosure will now be described in more detail with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be implemented in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
[0033] It should be understood that the terminology used herein is for the purpose of describing particular exemplary embodiments only and is not intended to be limiting. Unless the context clearly indicates otherwise, the singular forms “a,” “an,” and “described” as used herein may also include the plural forms. The terms “comprising,” “including,” “containing,” and “having” are inclusive and therefore indicate the presence of the stated features, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, steps, operations, elements, components, and / or combinations thereof. The method steps, processes, and operations described herein are not construed as requiring them to be performed in a particular order described or illustrated unless the order of performance is explicitly indicated. It should also be understood that additional or alternative steps may be used.
[0034] Although terms such as first, second, third, etc., may be used in this document to describe multiple elements, components, regions, layers, and / or segments, these elements, components, regions, layers, and / or segments should not be limited by these terms. These terms may be used only to distinguish one element, component, region, layer, or segment from another. Unless the context clearly indicates otherwise, terms such as "first," "second," and other numerical terms used herein do not imply order or sequence. Therefore, the first element, component, region, layer, or segment discussed below may be referred to as the second element, component, region, layer, or segment without departing from the teachings of the exemplary embodiments.
[0035] For ease of description, spatial relative terms may be used in the text to describe the relationship of one element or feature relative to another element or feature, as shown in the figure. These relative terms include, for example, "inside," "outside," "middle," "outer," "below," "below," "above," "over," etc. Such spatial relative terms are intended to include different orientations of the device in use or operation, other than those depicted in the figure. For example, if the device in the figure is flipped, an element described as "below other elements or features" or "below other elements or features" would subsequently be oriented "above other elements or features" or "above other elements or features." Therefore, the example term "below" can include both upper and lower orientations.
[0036] Plasma-enhanced chemical vapor deposition (PECVD) is a commonly used thin film deposition technique in semiconductor manufacturing. In PECVD, aluminum nitride heaters are widely used inside the process chamber to provide a uniform heating environment for the wafer.
[0037] In related technologies, the relatively wide spacing between heater elements between the heating plates of the heater leads to uneven heat transfer and temperature differences in different areas of the heater, which affects the uniformity of thin film deposition on the wafer surface and consequently affects the performance and quality of semiconductor devices.
[0038] In view of this, this embodiment provides a wafer heating device 100, which aims to reduce the distance between the top of the heating platform 1 and the heating unit by setting the first heating unit 2 and the second heating unit 3, so that the heat can be distributed more evenly during the transfer process, improve the uniformity of thin film deposition on the surface of the wafer 5, and thus solve the above-mentioned technical problems.
[0039] like Figure 1As shown, according to an embodiment of this utility model, a wafer heating device 100 is proposed, including a heating platform 1, a first heating unit 2, and a second heating unit 3. A wafer 5 is placed on top of the heating platform 1. The heating platform 1 is used to support the wafer 5 and heat the wafer 5. A heating cavity 111 is defined within the heating platform 1. The first heating unit 2 and the second heating unit 3 are spaced apart within the heating cavity 111 along a first direction X, and both the first heating unit 2 and the second heating unit 3 extend along a second direction Y. The first direction X is a vertical direction, and the second direction Y is perpendicular to the first direction X, i.e., the second direction Y is a horizontal direction. Along the first direction X, one of the first heating unit 2 and the second heating unit 3 has a minimum distance from the top surface of the heating platform 1, which is less than 1 / 2 of the dimension of the heating platform 1 along the first direction X. By arranging the heating units spaced apart along the vertical direction, this invention significantly reduces the spacing between the heating units, allowing for a more uniform distribution of heat during the transfer process and reducing local temperature deviations caused by differences in thermal conductivity. The first heating unit 2 and the second heating unit 3 extend along the second direction Y (horizontal direction), ensuring that heat is evenly distributed across the entire surface of the heating platform 1, avoiding excessive heat concentration in one direction, and thus reducing the temperature gradient. By designing the minimum distance between the heating unit and the top surface of the heating platform 1 to be less than half the dimension of the heating platform 1 along the first direction X, the spacing between the heating unit and the top surface of the heating platform 1 is reduced, improving the efficiency and uniformity of heat transfer. In addition, the heat transfer path is shortened, reducing heat loss during the transfer process and improving the efficiency of heat transfer.
[0040] The wafer heating device 100 of this utility model provides a first heating unit 2 and a second heating unit 3 in the heating cavity 111 of the heating platform 1. The minimum distance between one of the first heating unit 2 and the second heating unit 3 and the top surface of the heating platform 1 is less than 1 / 2 of the dimension of the heating platform 1 along the first direction X. This reduces the distance between the top surface of the heating platform 1 and the heating unit, reduces local temperature deviations caused by differences in thermal conductivity, and allows heat to be distributed more evenly during the transfer process. This improves the uniformity of thin film deposition on the surface of the wafer 5 and ensures the performance and quality of the semiconductor device.
[0041] In some embodiments of this utility model, the heating platform 1 includes a base 11 and a heating plate 12 disposed on the top of the base 11, the wafer 5 is placed on the heating plate 12, and the first heating unit 2 is spaced apart from the heating plate 12 along the first direction X.
[0042] Specifically, the heating platform 1 has a circular cross-sectional shape. A base 13 is provided at the bottom of the heating platform 1, and a heating plate 12 is provided on top of the base 11. The heating plate 12 is in direct contact with the wafer 5. The heating plate 12 can uniformly transfer the heat from the first heating unit 2 and the second heating unit 3 to the surface of the wafer 5, thereby achieving the heating of the wafer 5. The heating plate 12 is usually made of a material with good thermal conductivity, such as aluminum nitride (AlN), to ensure that the heat can be distributed quickly and evenly. The first heating unit 2 and the heating plate 12 are spaced apart along the first direction X (vertical direction), that is, there is a certain vertical distance between the first heating unit 2 and the heating plate 12, so that the heat can be transferred from the heating unit to the heating plate 12 through air or other media, rather than direct contact heating, which can transfer heat more evenly and avoid local overheating caused by direct contact. In addition, during the heat transfer process, the heat will be evenly distributed to the entire surface of the heating plate 12 through thermal radiation and thermal convection, effectively reducing heat loss during the heat transfer process and ensuring the temperature uniformity of the surface of the heating plate 12. During wafer 5 manufacturing, wafer 5 is placed on heating plate 12. Through the uniform heat conduction of heating plate 12, wafer 5 can obtain a uniform temperature distribution on its surface, which can effectively reduce the thickness deviation of thin film deposition on wafer 5, thereby improving the quality of thin film deposition.
[0043] In some embodiments of the present invention, the first heating unit 2 includes a plurality of first heating elements 21, which are spaced apart along the second direction Y.
[0044] Multiple first heating elements 21 are arranged at circumferential intervals along the heating platform 1, meaning these heating elements are uniformly distributed around the center of the heating platform 1. This allows heat to be uniformly transferred to the surface of the heating plate 12 from multiple directions, further improving temperature uniformity. The wafer 5 is placed on the heating plate 12, and through the uniform heat conduction of the heating plate 12, the surface of the wafer 5 can obtain a uniform temperature distribution. Due to the improved temperature uniformity, the uniformity of thin film deposition on the surface of the wafer 5 is also significantly improved, resulting in more stable performance and higher quality of the semiconductor device.
[0045] In some embodiments of this invention, the spacing between two adjacent first heating elements 21 is the same. This equal spacing ensures that heat is evenly distributed across the entire surface of the heating platform 1, avoiding localized heat concentration or insufficient heat caused by inconsistent spacing between the first heating elements 21. Furthermore, the equidistant arrangement of the first heating elements 21 effectively reduces the temperature gradient on the surface of the heating platform 1. Because the distance between each first heating element 21 is the same, heat can diffuse more evenly during transfer, reducing localized temperature differences and thus reducing the deviation in thin film thickness on the wafer 5 surface, thereby improving the quality of thin film deposition.
[0046] In some embodiments of the present invention, the first heating unit 2 further includes a first heating rod 22, which is connected to the first heating element 21 and is used to heat the first heating element 21.
[0047] The first heating rod 22 is typically made of a material with good electrical conductivity, such as a metal (e.g., a nickel-chromium alloy) or other materials capable of withstanding high temperatures and generating heat efficiently. The first heating rod 22 is connected to the first heating element 21. This connection can be a physical connection (e.g., welding or mechanical fixing) or an electrical connection achieved through conductive materials (e.g., conductive adhesive or conductive connectors). The first heating rod 22 heats itself by current and transfers heat to the first heating element 21. When current passes through the first heating rod 22, heat is generated due to the resistance effect. This heat is transferred to the connected first heating element 21 via thermal conduction, causing the first heating element 21 to reach the required heating temperature. After receiving the heat, the first heating element 21 then evenly distributes the heat to the surface of the heating platform 1, thereby heating the wafer 5 on the heating platform 1.
[0048] In some embodiments of the present invention, the second heating unit 3 includes a plurality of second heating elements 31, which are spaced apart along the second direction Y.
[0049] Multiple second heating elements 31 are spaced apart circumferentially along the heating platform 1, meaning these heating elements are uniformly distributed around the center of the heating platform 1. This allows heat to be uniformly transferred to the surface of the heating plate 12 from multiple directions, further improving temperature uniformity. The wafer 5 is placed on the heating plate 12, and through the uniform heat conduction of the heating plate 12, the surface of the wafer 5 achieves a uniform temperature distribution. Due to the improved temperature uniformity, the uniformity of thin film deposition on the surface of the wafer 5 is also significantly improved, resulting in more stable performance and higher quality semiconductor devices.
[0050] In some embodiments of this invention, the spacing between two adjacent second heating elements 31 is the same. This equal spacing ensures that heat is evenly distributed across the entire surface of the heating platform 1, avoiding localized heat concentration or insufficient heat caused by inconsistent spacing between the second heating elements 31. Furthermore, the equidistant arrangement of the second heating elements 31 effectively reduces the temperature gradient on the surface of the heating platform 1. Because the distance between each second heating element 31 is the same, heat can diffuse more evenly during transfer, reducing localized temperature differences and thus reducing the deviation in thin film thickness on the wafer 5 surface, thereby improving the quality of thin film deposition.
[0051] In some embodiments of the present invention, the second heating unit 3 further includes a second heating rod 32, which is connected to the second heating element 31 and is used to heat the second heating element 31.
[0052] The second heating rod 32 is typically made of a material with good electrical conductivity, such as a metal (e.g., a nickel-chromium alloy) or other materials capable of withstanding high temperatures and generating heat efficiently. The second heating rod 32 is connected to the second heating element 31. This connection can be a physical connection (e.g., welding or mechanical fixing) or an electrical connection achieved through conductive materials (e.g., conductive adhesive or conductive connectors). The second heating rod 32 heats itself by current and transfers heat to the second heating element 31. When current passes through the second heating rod 32, heat is generated due to the resistance effect. This heat is transferred to the connected second heating element 31 via thermal conduction, causing the second heating element 31 to reach the required heating temperature. After receiving the heat, the second heating element 31 then evenly distributes the heat to the surface of the heating platform 1, thereby heating the wafer 5 on the heating platform 1.
[0053] In some embodiments of this utility model, along the first direction X, the first heating unit 2 is disposed above the second heating unit 3, and the wafer heating device 100 further includes a heat sink 4, which is disposed at intervals between the heating plate 12 and the first heating unit 2 along the first direction X, and extends along the second direction Y.
[0054] The heat sink 4 is a circular plate, and its diameter matches the diameter of the circle formed by the multiple first heating elements 21. The heat sink 4 is typically made of a material with good thermal conductivity, such as metals (aluminum, copper, etc.) or high-performance thermally conductive ceramic materials, enabling rapid and uniform heat conduction and ensuring efficient heat transfer within the heat sink 4. The heat sink 4 is spaced along the first direction X between the heating plate 12 and the first heating unit 2, allowing it to receive heat from the first heating unit 2 and conduct it evenly to the heating plate 12. This effectively reduces localized heat concentration during heat transfer, minimizing localized temperature differences caused by uneven heating unit layout or heat transfer, and further optimizing heat distribution. The heat sink 4 extends along the second direction Y (horizontal direction), covering the entire surface of the heating platform 1, allowing it to uniformly receive heat from the first heating unit 2 and conduct it evenly to the entire surface of the heating plate 12. This improves the temperature uniformity of the heating plate 12 surface, resulting in more uniform thin film deposition on the wafer 5 surface, reducing thin film thickness deviations, and thus improving the performance and quality of the semiconductor device.
[0055] A second aspect of this invention provides a semiconductor manufacturing apparatus 1000, including a chamber 200 and a wafer heating device 100 as described above, the wafer heating device 100 being disposed inside the chamber 200. During wafer 5 manufacturing, the chamber 200 of the semiconductor manufacturing apparatus 1000 is evacuated to a predetermined low-pressure environment to reduce the influence of impurity gases on thin film deposition. Specific process gases (such as silane, ammonia, etc.) are introduced into the chamber 200 for the PECVD process. A first heating rod 22 is powered by an external power source and generates heat, which is transferred to a first heating element 21 via thermal conduction. The first heating element 21 then evenly transfers the heat to a heat sink 4. A second heating rod 32 is powered by an external power source and generates heat, which is transferred to a second heating element 31 via thermal conduction. The second heating element 31 then evenly transfers the heat to the heat sink 4. The heat sink 4 receives heat from the first heating unit 2 and the second heating unit 3, and through its excellent thermal conductivity, evenly distributes the heat across the entire surface of the heat sink 4. Heating plate 12 receives heat from heat sink 4 and conducts it evenly across the entire surface. Wafer 5 is placed on heating plate 12, and through the uniform heat conduction of heating plate 12, a uniform temperature distribution is achieved on the surface of wafer 5. After the surface of wafer 5 reaches a predetermined uniform temperature, the process gas in chamber 200 undergoes a chemical reaction under the action of plasma, generating a thin film which is deposited on the surface of wafer 5. Due to the uniformity of the surface temperature of heating plate 12, the thin film deposition on the surface of wafer 5 is more uniform, reducing the deviation in film thickness.
[0056] The wafer heating device 100 of this invention provides a first heating unit 2 and a second heating unit 3 within the heating cavity 111 of the heating platform 1. The minimum distance between one of the first heating unit 2 and the second heating unit 3 and the top surface of the heating platform 1 is less than 1 / 2 of the dimension of the heating platform 1 along the first direction X. This reduces the distance between the top surface of the heating platform 1 and the heating unit, reduces local temperature deviations caused by differences in thermal conductivity, and allows heat to be distributed more evenly during the transfer process. This improves the uniformity of thin film deposition on the wafer 5 surface and ensures the performance and quality of semiconductor devices.
[0057] The above description is merely a preferred embodiment of this utility model, but the protection scope of this utility model is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in this utility model should be included within the protection scope of this utility model. Therefore, the protection scope of this utility model should be determined by the scope of the claims.
Claims
1. A wafer heating device, characterized in that, It includes a heating platform, a first heating unit, and a second heating unit; The heating platform is used to support the wafer and heat the wafer. The heating platform defines a heating cavity. The first heating unit and the second heating unit are spaced apart in the heating cavity along a first direction, which is a vertical direction. Along the first direction, one of the first heating unit and the second heating unit has a minimum distance from the top surface of the heating platform, the minimum distance being less than 1 / 2 of the dimension of the heating platform along the first direction.
2. The wafer heating apparatus according to claim 1, characterized in that, The heating platform includes a base and a heating plate disposed on top of the base. The heating plate is used to place the wafer. The first heating unit is spaced apart from the heating plate along the first direction. The first heating unit extends along a second direction, which is perpendicular to the first direction.
3. The wafer heating apparatus according to claim 2, characterized in that, The first heating unit includes a plurality of first heating elements, which are spaced apart along the second direction.
4. The wafer heating apparatus according to claim 3, characterized in that, The spacing between two adjacent first heating elements is the same.
5. The wafer heating apparatus according to claim 3, characterized in that, The first heating unit further includes a first heating rod, which is connected to the first heating element and is used to heat the first heating element.
6. The wafer heating apparatus according to claim 2, characterized in that, The second heating unit includes a plurality of second heating elements, which are spaced apart along the second direction.
7. The wafer heating apparatus according to claim 6, characterized in that, The spacing between two adjacent second heating elements is the same.
8. The wafer heating apparatus according to claim 6, characterized in that, The second heating unit further includes a second heating rod, which is connected to the second heating element and is used to heat the second heating element.
9. The wafer heating apparatus according to claim 2, characterized in that, Along the first direction, the first heating unit is disposed above the second heating unit, and the wafer heating device further includes a heat sink, which is spaced between the heating plate and the first heating unit along the first direction, and extends along the second direction.
10. A semiconductor manufacturing apparatus, characterized in that, It includes a chamber and a wafer heating device as described in any one of claims 1 to 9, wherein the wafer heating device is disposed inside the chamber.