Etching device and semiconductor processing equipment
By using a Wheatstone bridge detection element to detect the amount of polymer deposition, the problems of uneven etching and etching defects were solved, thereby improving the stability of the etching process and the yield.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- SIEN (QINGDAO) INTEGRATED CIRCUITS CO LTD
- Filing Date
- 2025-04-18
- Publication Date
- 2026-05-12
AI Technical Summary
In the etching process, polymer deposition on the spray head leads to uneven etching and etching defects, affecting the electrical performance of the device and increasing maintenance costs.
Using a Wheatstone bridge detection element, the amount of polymer deposition is detected by measuring the resistance value of the resistor to be measured, and when it reaches a certain level, it will remind you to clean the spray head and reaction chamber to avoid spray head blockage and polymer particle adhesion.
It improves the stability and yield of the etching process, reduces maintenance costs and downtime, and ensures etching uniformity and device electrical performance.
Smart Images
Figure CN224232638U_ABST
Abstract
Description
Technical Field
[0001] This utility model belongs to the field of semiconductor manufacturing technology, and more specifically, it relates to an etching apparatus and semiconductor processing equipment. Background Technology
[0002] Etching is a crucial step in semiconductor manufacturing processes, microelectronic IC manufacturing processes, and micro / nano manufacturing processes.
[0003] In some etching processes, especially those involving polymers (such as etching organic materials or photoresists), polymers are generated as byproducts during the plasma reaction. These polymers can deposit on various components of the etching apparatus, particularly on the surface of the spray head located above the reaction chamber. The spray head's function is to evenly distribute the reactive gases, ensuring coverage of the entire wafer surface and guaranteeing etching uniformity. However, when polymers accumulate on the spray head, they can cause a series of problems. For example, as polymers gradually deposit on the pores or surface of the spray head, the gas flow path can be blocked or altered, preventing the reactive gases from being evenly distributed across the wafer surface and resulting in uneven etching. Furthermore, when polymers accumulate to a certain thickness, they can detach into microparticles, which may fall onto the wafer surface, causing etching defects. These defects can affect the electrical performance of the device and, in severe cases, even reduce the yield. Utility Model Content
[0004] The purpose of this invention is to provide an etching apparatus and a semiconductor processing device. This etching apparatus can improve the problem of uneven etching of wafers caused by polymer deposition on the spray head and etching defects caused by the accumulation of polymer particles.
[0005] To achieve the above objectives, the technical solution adopted by this utility model is as follows: The first aspect of this utility model provides an etching device, including a reaction chamber, a spray head is provided inside the reaction chamber, a spray hole is provided on the spray head, and a detection element is provided on the spray head and / or the side wall of the reaction chamber.
[0006] The detection element includes a Wheatstone bridge, which includes a first series circuit connected to a first known resistor and an adjustable resistor, a second series circuit connected to a second known resistor and a resistor to be measured, and a galvanometer connected to the first series circuit and the second series circuit.
[0007] The resistor to be measured is located inside the reaction chamber and does not cover the spray hole. The first known resistor, the second known resistor, and the adjustable resistor are located outside the reaction chamber.
[0008] In one embodiment, the reaction chamber includes a top wall and a bottom wall arranged in parallel, a spray head is disposed on the top wall, the spray head has a spray surface facing the bottom wall, and the resistor to be measured is disposed in the middle of the spray surface.
[0009] In one embodiment, a side wall is provided between the top wall and the bottom wall to form a receiving space, the side wall forming a square receiving space, and the resistance to be measured of the detection element is disposed on the two opposite side walls.
[0010] In one embodiment, the resistor to be measured is disposed near the edge of the spray surface along its length.
[0011] In one embodiment, the width of the resistor to be measured is less than one-third of the distance between adjacent spray holes.
[0012] In one embodiment, a first connection point is provided on the circuit between the first known resistor and the adjustable resistor, and a second connection point is provided on the circuit between the second known resistor and the resistor to be measured. The galvanometer is disposed on the circuit connecting the first connection point and the second connection point, and the resistance values of the first known resistor and the second known resistor are the same.
[0013] In one embodiment, a plasma generator is provided inside the reaction chamber.
[0014] In one embodiment, the resistor to be measured is provided with a first coating, which is used to isolate plasma.
[0015] In one embodiment, a second coating is further provided on the first coating of the resistor to be measured, the second coating being used to increase the adhesion rate of the polymer in the reaction chamber.
[0016] A second aspect of this invention provides a semiconductor processing apparatus, including the etching apparatus described above.
[0017] In the etching apparatus provided by this utility model, polymer is deposited onto the resistor to be measured inside the reaction chamber during the etching process. By adjusting the galvanometer to balance the Wheatstone bridge, the resistance value of the resistor to be measured can be obtained. The amount of polymer deposited on the resistor to be measured can be obtained from the resistance value. When the amount of deposited polymer reaches a certain level, it can remind the staff to clean the spray head and the inside of the reaction chamber in time, so as to avoid the accumulation of polymer generated during the etching process in the chamber and the blockage of the spray head. This reduces or avoids the problem of uneven etching caused by uneven air output from the spray head, as well as the problem of polymer accumulation in the chamber forming microparticles that adhere to the wafer and affect the electrical performance of the device, resulting in a decrease in yield. Attached Figure Description
[0018] To more clearly illustrate the technical solutions in the embodiments of this utility model, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0019] Figure 1 This is a schematic diagram of the structure of polymer deposition on the spray nozzle or surface of the spray head during the etching process of an existing etching device;
[0020] Figure 2 This is a schematic diagram of the etching apparatus provided in an embodiment of the present invention;
[0021] Figure 3 A schematic diagram of the structure of the detection element of the etching device provided in this embodiment of the utility model;
[0022] Figure 4 A bottom view of the spray head of the etching apparatus provided in this embodiment of the utility model;
[0023] Figure 5 A schematic diagram of the structure of the etching device provided in this embodiment of the present invention, showing the detection element disposed on the spray head;
[0024] Figure 6 A schematic diagram of the structure of the etching device provided in this embodiment of the present invention, showing that the detection element is disposed on the spray head and the side wall of the reaction chamber.
[0025] The following are the labeling elements in the figure:
[0026] 1-Reaction chamber; 2-Spray head; 3-Detection element; 11-Side wall; 12-Top wall; 13-Bottom wall; 21-Spray hole; R1-First known resistance; R2-Second known resistance; R3-Adjustable resistance; Rx-Resistance to be measured. Detailed Implementation
[0027] To make the objectives, technical solutions, and advantages of the embodiments of this utility model clearer, the technical solutions of the embodiments of this utility model will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this utility model, not all embodiments. Based on the embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort are within the protection scope of this utility model.
[0028] In the description of this utility model, it should be understood that the terms "comprising" and "having" as used herein, and any variations thereof, are intended to cover non-exclusive inclusion, for example, a process, method, system, product, or device that includes a series of steps or units is not necessarily limited to those steps or units that are explicitly listed, but may include other steps or units that are not explicitly listed or that are inherent to such process, method, product, or device.
[0029] It should be understood that the terms "length", "width", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", and "outer" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this utility model.
[0030] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. It should be understood that the term "and / or" as used herein is merely a description of the relationship between related objects, indicating that three relationships may exist. For example, A and / or B can represent: A alone, A and B simultaneously, or B alone. In the description of this utility model, unless otherwise stated, "multiple" means two or more.
[0031] In certain etching processes, especially those involving polymers (such as etching organic materials or photoresists), polymers are generated as byproducts during the plasma reaction. These polymers can deposit on various components of the etching apparatus, particularly on the surface of the spray head located above the reaction chamber. The spray head's function is to uniformly distribute the reactive gases, ensuring they cover the entire wafer surface and guaranteeing etching uniformity. However, when polymers accumulate on the spray head, the following problems arise:
[0032] Figure 1 This is a schematic diagram showing the structure of polymer deposition on the spray nozzles or surface of the spray head during the etching process in an existing etching apparatus. Please refer to [link / reference]. Figure 1 As polymers gradually deposit on the spray nozzles or surface of the spray head, the gas flow path may be blocked or altered. This can lead to the reaction gas not being evenly distributed on the wafer surface, resulting in uneven etching. The etching rate of different areas on the wafer will deviate, affecting the integrity and accuracy of the pattern.
[0033] When polymers accumulate to a certain thickness, they will break off into microparticles. These microparticles may fall onto the wafer surface, causing etching defects. These defects can affect the electrical performance of the device and, in severe cases, even lead to a decrease in yield.
[0034] As polymers accumulate, the gas distribution capacity of the spray head gradually decreases. It may be necessary to increase the flow rate of process gas or adjust process parameters to maintain the etching effect. However, such compensation measures often introduce more uncertainties, leading to instability in the etching process. As a result, the etch rate fluctuation between wafers increases, the process window narrows, and ultimately affects the production yield.
[0035] To maintain the normal operation of the etching equipment, polymer deposits on the spray heads need to be cleaned regularly. This not only increases the maintenance costs of the equipment but also leads to increased downtime and affects production efficiency.
[0036] This application addresses the aforementioned problems by providing an etching apparatus and a semiconductor processing device. The etching apparatus and semiconductor processing device provided by this invention will be described in detail below with reference to specific embodiments.
[0037] Figure 2 This is a schematic diagram of the etching apparatus provided in an embodiment of the present invention. Figure 3 This is a schematic diagram of the structure of the detection element of the etching device provided in the embodiment of this utility model. Figure 4 Please refer to the bottom view of the spray head of the etching apparatus provided in this embodiment of the utility model. Figures 2-4 The first aspect of this embodiment provides an etching apparatus, including a reaction chamber 1, a spray head 2 disposed in the reaction chamber 1, a spray hole 21 disposed on the spray head 2, and a detection element 3 disposed on the spray head 2 and / or on the side wall 11 of the reaction chamber 1.
[0038] The detection element 3 includes a Wheatstone bridge, which includes a first series circuit connected to a first known resistor R1 and a resistor to be measured Rx, a second series circuit connected to a second known resistor R2 and an adjustable resistor R3, and a galvanometer G connected to the first series circuit and the second series circuit.
[0039] The resistor to be measured, Rx, is located inside the reaction chamber 1 and does not cover the spray hole 21. The first known resistor, R1, the second known resistor, and the adjustable resistor are located outside the reaction chamber 1.
[0040] The etching apparatus of this embodiment includes a reaction chamber 1, and the size of the reaction chamber 1 is not particularly limited in this embodiment. A spray head 2 is disposed within the reaction chamber 1, and the spray head 2 has spray holes 21. The spray head 2 is used to spray etching gas. The specific form of the etching gas is not particularly limited in this embodiment. For example, the etching gas in this embodiment is used for etching organic materials and photoresist. The spray holes 21 are disposed on the spray head 2, and the specific size of the spray holes 21 is not particularly limited in this embodiment.
[0041] Please see Figure 2 , Figure 3 In this embodiment, the detection element 3 includes a Wheatstone bridge, which comprises a first series circuit connecting a first known resistor R1 and an adjustable resistor R3, a second series circuit connecting a second known resistor R2 and a resistor to be measured Rx, and a galvanometer G connecting the first and second series circuits. This embodiment does not impose any particular limitation on the specific forms of the first known resistor R1, the second known resistor R2, and the adjustable resistor R3. The galvanometer in this embodiment can be an ammeter or a voltmeter. The first known resistor R1, the second known resistor R2, and the adjustable resistor R3 are located outside the reaction chamber. During the etching process, the resistance values of the first known resistor R1, the second known resistor R2, and the adjustable resistor R3 are not affected by the etching gas. The resistor to be measured Rx is located inside the reaction chamber 1. For example, during the etching process, byproducts generated during the plasma reaction will deposit on the resistor to be measured Rx, causing a change in the resistance value of the resistor to be measured Rx. The resistor to be measured Rx does not cover the spray orifice, and during the etching process, the resistor to be measured Rx will not affect the gas output from the spray orifice 21 of the spray head 2.
[0042] The Wheatstone bridge works by determining the value of the resistor Rx to be measured by comparing the voltage difference between two circuit branches. In a balanced state, the two pairs of arms of the bridge have zero potential difference, causing current to no longer flow through the detector G (such as an ammeter or voltmeter). At this point, the resistance value of the resistor Rx to be measured can be calculated based on the geometry and parameters of the bridge. In this embodiment, the Wheatstone bridge consists of four resistors: a first known resistor R1, a second known resistor R2, an adjustable resistor R3, and the resistor Rx to be measured. These four resistors are connected in a specific way to form a quadrilateral circuit. In a balanced state, the following condition is satisfied: R1 × Rx = R2 × R3 (that is, the value of Rx can be obtained from the values of R1, R2, and R3; if R1 = R2, the value of the resistor Rx to be measured is equal to the resistance value of the adjustable resistor R3).
[0043] In this embodiment, the detection element 3 can calculate the resistance value of the resistor to be measured, Rx, using a Wheatstone bridge. For example, before the etching process begins, the resistance value of the resistor to be measured, Rx, is Rs. During the etching process, due to polymer deposition, the resistance value of the resistor to be measured, Rx, will increase to Rd. The amount of polymer deposited on the resistor to be measured, Rx, can be inferred from the magnitude of its resistance value. (Since the amount of polymer deposition directly affects the wafer etching rate and wafer etching condition, and since the resistance value of each measuring resistor Rx corresponds to the corresponding amount of polymer deposition, the etching rate or wafer etching condition corresponding to the resistance value of the resistor to be measured, Rx, can be recorded in advance through practical experience. The relationship between the resistance value of the resistor to be measured, Rx, and the amount of polymer deposition can be obtained through experience.) This enables the detection of the amount of polymer deposition on the side wall of the spray head 21 or the reaction chamber 1 during the etching process.
[0044] In this embodiment, a detection element 3 is provided on the spray head 2 and / or the side wall of the reaction chamber 1. For example, Figure 5 Please refer to the structural diagram of the etching device provided in this embodiment of the present invention, which shows the detection element disposed on the spray head. Figure 5 The detection element 3 is provided on the spray head 2, and the detection element 3 is located in the middle and on both sides of the representative spray head 2; or, the detection element 3 is provided on the side wall of the reaction chamber 1 in this embodiment. Figure 6 Please refer to the schematic diagram of the etching device provided in this embodiment of the present invention, which shows the detection element disposed on the spray head and the side wall of the reaction chamber. Figure 6 The detection element 3 is provided on both the spray head 2 and the side wall of the reaction chamber 1. By providing the detection element 3 on both the spray head 2 and the side wall of the reaction chamber 1, the amount of polymer deposited in the reaction chamber 1 can be obtained more comprehensively.
[0045] In the etching apparatus provided in this embodiment, polymer is deposited onto the resistor to be measured inside the reaction chamber during the etching process. By adjusting the galvanometer to balance the Wheatstone bridge, the resistance value of the resistor to be measured can be obtained. The amount of polymer deposited on the resistor to be measured can be obtained from the resistance value. When the amount of deposited polymer reaches a certain level, it can remind the staff to clean the spray head and the inside of the reaction chamber in time, so as to avoid the accumulation of polymer generated during the etching process in the chamber and the blockage of the spray head. This reduces or avoids the problem of uneven etching caused by uneven air output from the spray head, as well as the problem of polymer accumulation in the chamber forming particles that adhere to the wafer and affect the electrical performance of the device, resulting in a decrease in yield.
[0046] In one specific embodiment, please refer to Figure 2The reaction chamber 1 includes a top wall 12 and a bottom wall 13 arranged in parallel. A spray head 2 is disposed on the top wall 12 and has a spray surface facing the bottom wall 13. The resistor to be measured, Rx, is disposed in the middle of the spray surface. In this embodiment, the reaction chamber 1 includes a top wall 12 and a bottom wall 13 arranged in parallel, and the resistor to be measured, Rx, is disposed in the middle of the spray surface. This embodiment measures the resistance value of the resistor to be measured, Rx, located in the middle of the spray surface. The amount of polymer deposited on the resistor to be measured, Rx, can be inferred from the resistance value, thereby enabling the detection of the amount of polymer deposited on the pores of the spray surface of the spray head 2. When the amount of polymer deposited on the pores of the spray surface of the spray head 2 reaches a certain value, the polymer is promptly cleaned to prevent blockage or alteration of the etching gas flow path, which could lead to uneven distribution of the reaction gas on the wafer surface and uneven etching. This prevents deviations in etching rates in different areas of the wafer, ensuring the integrity and accuracy of the etching pattern.
[0047] Furthermore, a side wall 11 is provided between the top wall 12 and the bottom wall 13 to form a receiving space. The side wall 11 forms a square receiving space, and the resistor Rx to be measured by the detection element 3 is disposed on the two opposite side walls 11. In this embodiment, the side walls 11 of the reaction chamber 1 form a square receiving space. By disposing the resistor Rx to be measured by the detection element 3 on the two opposite side walls 11, the amount of polymer deposited at multiple locations within the reaction chamber 1 can be obtained through the resistance value. Combining the polymer deposition amounts at multiple locations for judgment can improve the accuracy of the deposition amount judgment.
[0048] Preferably, the resistor Rx to be measured is disposed near the edge of the spray surface along its length. In this embodiment, the resistor Rx to be measured of the detection element 3 is disposed on the two opposite sidewalls 11, as well as in the middle of the spray surface of the spray head 2 and near the edge of the spray surface along its length. By disposing the detection element 3 on the two opposite sidewalls 11 of the reaction chamber 1, this embodiment can better determine the amount of polymer deposited inside the reaction chamber 1. By disposing the detection element 3 at several representative locations on the spray surface of the spray head 2, this embodiment can accurately determine the amount of polymer deposited on the spray head 2.
[0049] Preferably, please refer to Figure 4 The width of the resistor to be measured, Rx, is less than one-third of the distance between adjacent spray holes 21. In this embodiment, the width of the resistor to be measured, Rx, is less than one-third of the distance between adjacent spray holes 21. When the resistor to be measured, Rx, is placed on the spray surface of the spray head 2, it can be ensured that the resistor to be measured, Rx, does not cover the spray holes 21 of the spray head 2. The size of the resistor to be measured, Rx, in this embodiment is moderate and will not affect the reaction chamber 1 during the etching process.
[0050] In one specific embodiment, a first connection point is provided in the circuit between the first known resistor R1 and the adjustable resistor R3, and a second connection point is provided in the circuit between the second known resistor R2 and the resistor to be measured Rx. The galvanometer G is disposed on the circuit connecting the first connection point and the second connection point, and the resistance values of the first known resistor R1 and the second known resistor R2 are the same. In this embodiment, the galvanometer G is disposed on the circuit connecting the first connection point and the second connection point. For example, please refer to [reference needed]. Figure 2 The first connection point is the midpoint of the circuit between the first known resistor R1 and the adjustable resistor R3, and the second connection point is the midpoint of the circuit between the second known resistor R2 and the resistor to be measured Rx. In this embodiment, the ammeter is connected to the midpoints of both the circuit between the first known resistor R1 and the adjustable resistor R3, and the circuit between the second known resistor R2 and the resistor to be measured Rx, which improves the accuracy of the measurement.
[0051] According to the working principle of the Wheatstone bridge, in a balanced state, the formula for calculating the resistance Rx to be measured is Rx = R2 * R3 / R1. When R1 = R2, the balance condition of the bridge becomes simpler: Rx = R3. This means that when calculating the resistance Rx, the known R3 can be used directly, simplifying the calculation process. As long as the measurement accuracy of R3 is high, the measurement accuracy of Rx will also improve accordingly. With R1 = R2, the two arms of the bridge are symmetrical, which reduces errors caused by resistance mismatch. The symmetrical design makes the bridge more stable and improves the reliability of the measurement.
[0052] In the above embodiment, a plasma generator is provided inside the reaction chamber 1. The etching device in this embodiment is a plasma etching device.
[0053] In one specific embodiment, a first coating is provided on the resistor Rx to be measured, the first coating being used to isolate the plasma. This embodiment, by providing a first coating on the resistor Rx to isolate the plasma, can avoid the influence of the plasma on the resistor Rx during the measurement process. This improves the accuracy of the resistance value measurement of the resistor Rx, thereby improving the accuracy of the measurement of the polymer attached to the resistor Rx.
[0054] Furthermore, a second coating is also provided on the first coating of the resistor Rx to be measured. The second coating is used to increase the adhesion rate of the polymer in the reaction chamber 1. In this embodiment, by providing a second coating that increases the polymer adhesion rate on the first coating of the resistor Rx to be measured, the polymer generated during the etching process can be more effectively adhered to the resistor Rx.
[0055] In existing technologies, as polymers accumulate during etching, the gas distribution capacity of the spray head 2 gradually decreases, potentially requiring increased process gas flow or adjustments to process parameters to maintain the etching effect. However, such compensation measures often introduce more uncertainties, leading to instability in the etching process. This can result in increased fluctuations in the inter-wafer etching rate, a narrowing process window, and ultimately, reduced production yield. In this embodiment, the etching apparatus can alert operators to clean the spray head 2 promptly when the deposition amount reaches a certain level, i.e., when the measured resistance Rx reaches a certain value. This prevents polymer accumulation within the cavity during etching from clogging the spray nozzles 21 and ensures the stability of the etching process.
[0056] Existing etching apparatuses typically require cleaning and maintenance of the reaction chamber 1 when a certain number of wafers have been processed to maintain normal operation. This involves periodically cleaning the polymer deposits on the spray head 2, which not only increases maintenance costs but also leads to increased downtime and impacts production efficiency. The etching apparatus disclosed in this embodiment directly obtains the polymer deposition amount based on the resistance value of the resistor Rx to be measured. That is, the reaction chamber 1 is cleaned only when the deposition amount reaches a certain level, reducing the frequency of chamber openings and improving production efficiency.
[0057] In the etching apparatus provided by this utility model embodiment, polymer is deposited onto the resistor Rx to be measured located inside the reaction chamber 1 during the etching process. By adjusting the galvanometer G to make the Wheatstone bridge reach equilibrium, the resistance value of the resistor Rx to be measured can be obtained. The amount of polymer deposited inside the reaction chamber 1 can be obtained by the resistance value of the resistor Rx to be measured during the etching process. Thus, when the amount of deposited polymer reaches a certain level, the spray head 2 and the inside of the reaction chamber 1 can be cleaned in time, reducing or avoiding the problem of uneven etching caused by uneven air output from the spray head 2, and the problem of polymer particles falling off onto the wafer, affecting the electrical performance of the wafer device and causing a decrease in yield.
[0058] A second aspect of this embodiment provides a semiconductor processing apparatus, including the etching apparatus described in the above embodiment.
[0059] For example, it includes a reaction chamber, in which a spray head is provided, the spray head is provided with spray holes, and a detection element is provided on the spray head and / or on the side wall of the reaction chamber.
[0060] The detection element includes a Wheatstone bridge, which includes a first series circuit connected to a first known resistor and an adjustable resistor, a second series circuit connected to a second known resistor and a resistor to be measured, and a galvanometer connected to the first series circuit and the second series circuit.
[0061] The resistor to be measured is located inside the reaction chamber and does not cover the spray hole. The first known resistor, the second known resistor, and the adjustable resistor are located outside the reaction chamber.
[0062] The semiconductor processing equipment provided by this utility model includes the etching device described above. During the etching process, polymer is deposited onto the resistor to be measured located inside the reaction chamber. By adjusting the galvanometer to balance the Wheatstone bridge, the resistance value of the resistor to be measured can be obtained. The amount of polymer deposited on the resistor to be measured can be obtained from the resistance value of the resistor to be measured. When the amount of deposition reaches a certain level, it can remind the staff to clean the spray head and the inside of the reaction chamber in time, so as to avoid the accumulation of polymer generated during the etching process in the chamber and the blockage of the spray head. This reduces or avoids the problem of uneven etching caused by uneven air output from the spray head, as well as the problem of polymer accumulation forming particles that adhere to the wafer and affect the electrical performance of the device, resulting in a decrease in yield.
[0063] In the above description, the terms "an embodiment," "some embodiments," "example," "specific example," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of this utility model. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.
[0064] The above embodiments are only used to illustrate the technical solutions of this utility model, and are not intended to limit it. Although the utility model has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this utility model.
Claims
1. An etching apparatus, characterized in that: It includes a reaction chamber, a spray head is provided inside the reaction chamber, a spray hole is provided on the spray head, and a detection element is provided on the spray head and / or the side wall of the reaction chamber. The detection element includes a Wheatstone bridge, which includes a first series circuit connected to a first known resistor and an adjustable resistor, a second series circuit connected to a second known resistor and a resistor to be measured, and a galvanometer connected to the first series circuit and the second series circuit. The resistor to be measured is located inside the reaction chamber and does not cover the spray hole. The first known resistor, the second known resistor, and the adjustable resistor are located outside the reaction chamber.
2. The etching apparatus according to claim 1, characterized in that: The reaction chamber includes a top wall and a bottom wall arranged in parallel. The spray head is disposed on the top wall and has a spray surface facing the bottom wall. The resistor to be measured is disposed in the middle of the spray surface.
3. The etching apparatus according to claim 2, characterized in that: A side wall is provided between the top wall and the bottom wall to form a receiving space. The side wall forms a square receiving space, and the resistance to be measured of the detection element is disposed on the two opposite side walls.
4. The etching apparatus according to claim 2, characterized in that: The resistor to be measured is located near the edge of the spray surface along its length.
5. The etching apparatus according to claim 4, characterized in that: The width of the resistor to be measured is less than one-third of the distance between adjacent spray holes.
6. The etching apparatus according to any one of claims 1-5, characterized in that: The circuit between the first known resistor and the adjustable resistor has a first connection point, and the circuit between the second known resistor and the resistor to be measured has a second connection point. The galvanometer is disposed on the circuit connecting the first connection point and the second connection point, and the resistance values of the first known resistor and the second known resistor are the same.
7. The etching apparatus according to claim 6, characterized in that: A plasma generator is installed inside the reaction chamber.
8. The etching apparatus according to claim 7, characterized in that: The resistor to be measured is provided with a first coating, which is used to isolate the plasma.
9. The etching apparatus according to claim 8, characterized in that: A second coating is also provided on the first coating of the resistor to be measured, the second coating being used to increase the adhesion rate of the polymer in the reaction chamber.
10. A semiconductor processing apparatus, characterized in that: Includes the etching apparatus according to any one of claims 1-9.