Semiconductor package and semiconductor package module

Abstract

The semiconductor package may include: a first lead frame; an element that outputs a signal corresponding to a current flowing through the first lead frame; a second lead frame electrically insulated from the first lead frame and outputting a signal corresponding to the signal from the element; and a sealing portion that seals the element, a portion of the first lead frame, and a portion of the second lead frame with a resin. A terminal portion of the first lead frame may be exposed from a first surface of the sealing portion. A terminal portion of the second lead frame may be exposed from a second surface of the sealing portion opposing the first surface in a first direction. The sealing portion may have, on at least one surface other than the first surface and the second surface, at least one groove extending in a second direction intersecting the first direction.

Description

Technical Field

[0001] This utility model relates to semiconductor packages. Background Technology

[0002] Patent Document 1 discloses a current sensor comprising: a conductor having lead terminals through which a measured current flows; a magnetoelectric conversion element that outputs a signal proportional to the magnetic field generated by the current flowing through the conductor; a signal processing IC that processes the signal; and other lead terminals that output a signal from the signal processing IC. The current sensor is a semiconductor package formed by sealing the conductor, the magnetoelectric conversion element, and the signal processing IC with molding resin.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent No. 6321800 Utility Model Content

[0006] The problem to be solved

[0007] In semiconductor packages like those described above, it is desirable to suppress package enlargement even when used at high operating voltages and to ensure insulation between lead terminals.

[0008] General public

[0009] One embodiment of the semiconductor package of this invention may include: a first lead frame; an element that outputs a signal corresponding to a current flowing through the first lead frame; a second lead frame electrically insulated from the first lead frame and outputting a signal corresponding to the signal from the element; and a sealing portion that seals the element, a portion of the first lead frame, and a portion of the second lead frame with resin. Terminal portions of the first lead frame may be exposed from a first surface of the sealing portion. Terminal portions of the second lead frame may be exposed from a second surface of the sealing portion opposite to the first surface in a first direction. The sealing portion may have at least one groove extending in a second direction intersecting the first direction on at least one surface other than the first and second surfaces.

[0010] In the semiconductor package, the sealing portion may include third and fourth surfaces opposite to each other in the thickness direction, and fifth and sixth surfaces opposite to each other in a second direction that intersects the first direction and the thickness direction, respectively. Alternatively, the at least one groove may include a first groove extending from the fifth surface toward the sixth surface on the third and fourth surfaces, respectively.

[0011] In any of the semiconductor packages, the first groove may extend along the second direction.

[0012] In any of the semiconductor packages, the at least one groove may include a second groove extending from the third surface toward the fourth surface on the fifth surface and the sixth surface, respectively.

[0013] In any of the semiconductor packages, the second groove may extend along the thickness direction.

[0014] In any of the semiconductor packages, the first slot may be connected to the second slot.

[0015] In any of the semiconductor packages, the sealing portion may include third and fourth surfaces opposite to each other in the thickness direction, and fifth and sixth surfaces opposite to each other in a second direction that intersects the first direction and the thickness direction, respectively. Alternatively, the at least one groove may include a groove that runs continuously around the third, fourth, fifth, and sixth surfaces.

[0016] In any of the semiconductor packages, the width of the recess of the at least one groove may be 1 mm or more.

[0017] In any of the semiconductor packages, the depth of the at least one groove may be 0.5 mm or more.

[0018] In any of the semiconductor packages, the sealing portion may include a plurality of slots as the at least one slot, wherein the spacing between at least one of the plurality of slots is wider than the spacing between the other slots in the plurality of slots.

[0019] In any of the semiconductor packages, the sealing portion may include a plurality of grooves as the at least one groove, wherein the spacing between the grooves in the central portion in the first direction is wider than the spacing between the grooves outside the central portion.

[0020] In any of the semiconductor packages, the terminal portion of the first lead frame may be electrically connected to a first power system, and the terminal portion of the second lead frame may be connected to a second power system to which a lower voltage is applied than that of the first power system.

[0021] In any of the semiconductor packages, when viewed from the second direction, the respective mounting surfaces of the terminal portions of the first lead frame and the second lead frame are located outside the thickness direction relative to the third or fourth surface.

[0022] In any of the semiconductor packages, when viewed from the second direction, the side of the at least one slot may be inclined in a manner that expands from the bottom surface toward the opening.

[0023] In any of the semiconductor packages, the tilt angle of the side of the at least one slot relative to the bottom surface may be less than 85 degrees.

[0024] In any of the semiconductor packages, the convex side of the at least one groove may be chamfered or rounded by more than 0.1 mm.

[0025] In any of the semiconductor packages, the sealing portion may be used to seal the element, a portion of the first lead frame, and a portion of the second lead frame using molding resin.

[0026] In any of the semiconductor packages, the element may be at least one magnetoelectric conversion element that outputs a signal corresponding to the magnitude of the magnetic field generated by the current flowing through the first lead frame.

[0027] Any of the semiconductor packages may further include a signal processing IC that processes the signal output from the at least one magnetoelectric conversion element and outputs the processed signal via the second lead frame. Alternatively, the sealing portion may also seal the signal processing IC.

[0028] In any of the semiconductor packages, the at least one magnetoelectric conversion element may be electrically connected to the signal processing IC via a first conductor. Alternatively, the signal processing IC may be electrically connected to the second lead frame via a second conductor. Finally, the at least one slot may be positioned so as not to overlap with the first and second conductors when viewed from above.

[0029] In any of the semiconductor packages, the terminal portion of the first lead frame may extend linearly from the first surface along the first direction, and the terminal portion of the second lead frame may extend linearly from the second surface along the first direction.

[0030] In any of the semiconductor packages, the terminal portion of the first lead frame may have a through hole for threading the terminal portion of the first lead frame to a substrate mounting the semiconductor package via bolts.

[0031] One embodiment of the present invention may include any of the semiconductor package and a substrate mounted on the semiconductor package. Specifically, the substrate may include a slit at a location overlapping the seal when viewed from the thickness direction of the seal, the slit having at least a portion along the second direction.

[0032] In the module, the slit may have a continuous portion that intersects with the fifth and sixth surfaces of the sealing portion, which are opposite to each other in the second direction, when viewed from the thickness direction of the sealing portion.

[0033] In either of the modules described, the substrate may have a first pad electrically connected to the first leadframe. The substrate may have a second pad electrically connected to the second leadframe. The slit may be disposed between the first pad and the second pad.

[0034] In any of the modules, the width of the slit in the second direction may be longer than the combined width of the first pad and the second pad in the second direction.

[0035] In any of the modules described, the width of the slit may be 1 mm or more.

[0036] In any of the modules described, the sealing portion may include third and fourth surfaces opposite to each other in the thickness direction, and fifth and sixth surfaces opposite to each other in a second direction that intersects the first direction and the thickness direction, respectively. The at least one groove may include a first groove extending from the fifth surface toward the sixth surface on the third and fourth surfaces, respectively. The fourth surface may be opposite to the substrate. The fourth surface of the sealing portion may be located relative to the substrate at a position higher than the respective mounting surfaces of the terminal portions of the first lead frame and the second lead frame.

[0037] In any of the semiconductor packages described, the terminal portion of the first lead frame may have: a first portion bent from the first surface toward the substrate along the thickness direction; and a second portion, thinner than the first portion and extending from the first portion through a hole in the substrate along the thickness direction. The terminal portion of the second lead frame may have: a third portion bent from the second surface toward the substrate along the thickness direction; and a fourth portion thinner than the third portion and extending from the third portion through a hole in the substrate along the thickness direction. Alternatively, the diameter of the hole penetrated by the second portion of the substrate may be narrower than the width of the first portion, and the diameter of the hole penetrated by the fourth portion of the substrate may be narrower than the width of the third portion.

[0038] In any of the semiconductor packages, the slit may be wider in the first and second directions than the sealing portion in the first and second directions, and a portion of the sealing portion may be disposed within the slit.

[0039] In any of the semiconductor packages, the terminal portion of the first lead frame may extend linearly from the first surface along the first direction, and the terminal portion of the second lead frame may extend linearly from the second surface along the first direction.

[0040] In any of the semiconductor packages, when viewed from the second direction, the terminal portion of the first lead frame may have a first portion and a second portion, the first portion being bent away from the bottom surface of the seal from the first surface along the thickness direction or away from the bottom surface of the seal from the first surface along the first direction, and the second portion being bent away from the first portion along the first direction, the terminal portion of the first lead frame having a mounting surface with the substrate in the second portion. Alternatively, when viewed from the second direction, the terminal portion of the second lead frame may have a third portion and a fourth portion, the third portion being bent away from the bottom surface of the seal from the second surface along the thickness direction or away from the bottom surface of the seal from the second surface along the thickness direction or away from the bottom surface of the seal from the second surface along the thickness direction or away from the bottom surface of the seal from the first direction, the fourth portion being bent away from the third portion along the first direction, and the terminal portion of the second lead frame having a mounting surface with the substrate in the fourth portion.

[0041] In any of the semiconductor packages, the terminal portion of the first lead frame may have a through hole for threading the terminal portion of the first lead frame to a substrate mounting the semiconductor package via bolts. Alternatively, the terminal portion of the first lead frame may be disposed on a mounting surface of the substrate, and pads may be provided on a surface of the substrate opposite to the mounting surface. These pads are for electrical connection to a power supply system that applies voltage to the first lead frame, and the terminal portion of the first lead frame is electrically connected to the pads via bolts.

[0042] Furthermore, the above summary of the utility model does not list all the features of this utility model. Additionally, sub-combinations of these feature groups can also constitute a utility model. Attached Figure Description

[0043] Figure 1A This is a schematic top view of the current sensor of the first embodiment, viewed from the top surface (Z-axis direction).

[0044] Figure 1B yes Figure 1A The diagram shows a schematic top view of the current sensor as seen from the side (X-axis direction).

[0045] Figure 2A It is a diagram used to illustrate spatial distance.

[0046] Figure 2B This is a diagram used to illustrate creepage distance.

[0047] Figure 3 This is a diagram used to illustrate a comparative example.

[0048] Figure 4A This is a schematic top view showing the current sensor of the first embodiment mounted on the substrate, viewed from the top surface (Z-axis direction) of the current sensor.

[0049] Figure 4B This is observed from the side (X-axis direction) of the current sensor. Figure 4A The diagram shows a schematic top view of the current sensor mounted on the substrate.

[0050] Figure 5A This is a schematic top view of the current sensor according to the second embodiment, viewed from the top side (Z-axis direction).

[0051] Figure 5B yes Figure 5A The diagram shows a schematic top view of the current sensor as seen from the side (X-axis direction).

[0052] Figure 5C yes Figure 5A A schematic top view of the current sensor 10 as seen from the side (Y-axis direction).

[0053] Figure 6A This is a schematic top view of the current sensor according to the third embodiment, viewed from the top side (Z-axis direction).

[0054] Figure 6B yes Figure 6A The diagram shows a schematic top view of the current sensor as seen from the side (X-axis direction).

[0055] Figure 7A This is a schematic top view showing the current sensor of the third embodiment mounted on the substrate, viewed from the top surface (Z-axis direction) of the current sensor.

[0056] Figure 7B This is observed from the side (X-axis direction) of the current sensor. Figure 7A The diagram shows a schematic top view of the current sensor mounted on the substrate.

[0057] Figure 8A This is a schematic top view of the current sensor according to the fourth embodiment, viewed from the top side (Z-axis direction).

[0058] Figure 8B yes Figure 8AThe diagram shows a schematic top view of the current sensor as seen from the side (X-axis direction).

[0059] Figure 9 This is a schematic top view showing the current sensor of the fourth embodiment mounted on the substrate, viewed from the side (X-axis direction) of the current sensor.

[0060] Figure 10A This is a schematic top view of the current sensor mounted on the substrate of the fifth embodiment, as viewed from the top surface (Z-axis direction).

[0061] Figure 10B It is mounted on Figure 10A A schematic top view of the current sensor on the substrate shown, viewed from the side (X-axis direction).

[0062] Figure 11 This is a schematic top view of a current sensor in another embodiment, viewed from the top side (Z-axis direction).

[0063] Figure 12 This is a schematic cross-sectional view of a current sensor in another embodiment, viewed from the side (X-axis direction). Detailed Implementation

[0064] The present invention will now be described through embodiments thereof, but these embodiments do not limit the technical solutions of the claims. Furthermore, the combinations of features described in the embodiments are not necessarily all necessary for the solution of the invention.

[0065] Figure 1A and Figure 1B A schematic diagram showing the semiconductor package in which the current sensor 10 functions as in the first embodiment. Figure 1A This is a schematic top view of the current sensor 10 of the first embodiment, viewed from the top side (Z-axis direction). Figure 1B yes Figure 1A A schematic top view of the current sensor 10 as seen from the side (X-axis direction). Regarding coordinates, in Figure 1A In this diagram, the direction parallel to the paper and moving upwards is defined as the X-axis; the direction parallel to the paper and moving from left to right is defined as the Y-axis; and the direction perpendicular to the paper and moving from the inside towards the front is defined as the Z-axis. Any one of the X, Y, or Z axes is orthogonal to the other axes. The Y-axis is an example of the first direction. The X-axis is an example of the second direction. The Z-axis is an example of the thickness direction.

[0066] In one example, the first direction is from the surface 130a where a pair of lead terminals 140a are exposed on the side of the sealing portion 130, toward the surface 130b opposite to surface 130a where a plurality of lead terminals 150a are exposed. The second direction is from the surface 130f on the side of the sealing portion 130 where a pair of lead terminals 140a and a plurality of lead terminals 150a are not exposed, toward the surface 130e opposite to surface 130f. The thickness direction is from the surface 130d on the bottom side of the sealing portion 130 toward the surface 130c on the top side of the sealing portion 130.

[0067] In one example, the first direction is along the direction of the substrate when the current sensor 10 is mounted on the substrate, and is the direction from the surface 130a exposed by a pair of lead terminals 140a toward the surface 130b opposite to surface 130a and exposed by a plurality of lead terminals 150a. The second direction is along the direction of the substrate when the current sensor 10 is mounted on the substrate, and is a direction intersecting the first direction. The thickness direction is the direction through the substrate when the current sensor 10 is mounted on the substrate, and more specifically, is a direction perpendicular to the substrate.

[0068] The current sensor 10 includes a signal processing IC 100, a magnetoelectric conversion element 20, a magnetoelectric conversion element 22, a sealing portion 130, a lead frame 140, and a lead frame 150. The magnetoelectric conversion elements 20 and 22 are electrically connected to the signal processing IC 100 via wires 30. The signal processing IC 100 is electrically connected to the lead frame 150 via wires 108. Wire 30 is an example of a first wire, and wire 108 is an example of a second wire.

[0069] The lead frame 140 includes a pair of lead terminals 140a exposed from the surface 130a of the sealing portion 130 and a conductor 140b sealed by the sealing portion 130 and configured to surround at least a portion of the magnetoelectric conversion element 20 and the magnetoelectric conversion element 22. The lead frame 150 includes a plurality of lead terminals 150a exposed from the surface 130b opposite to the surface 130a of the sealing portion 130 in the Y-axis direction and a conductor 150b electrically connected to the signal processing IC 100 via a wire 108. Figure 1A The shapes of the lead frame 140 and lead frame 150 shown are merely examples; the shapes of the lead frame 140 and lead frame 150 can be any shapes.

[0070] Leadframe 140 is a primary-side leadframe, and leadframe 150 is a secondary-side leadframe. Leadframes 140 and 150 are physically separate and electrically insulated. Leadframe 140 is an example of a first leadframe, and leadframe 150 is an example of a second leadframe. Lead terminal 140a is electrically connected to a high-voltage power supply system. Lead terminal 150a is electrically connected to a low-voltage power supply system that applies a voltage lower than that of the high-voltage power supply system. The high-voltage power supply system is an example of a first power supply system. The low-voltage power supply system is an example of a second power supply system.

[0071] The sealing portion 130 uses molding resin to seal the magnetoelectric conversion element 20, magnetoelectric conversion element 22, conductor 140b, conductor 150b, signal processing IC 100, wire 30, and wire 108. The sealing portion 130 can be formed by compression molding or transfer molding using a mold. The molding resin can be, for example, a thermosetting epoxy resin with added silica. The molding resin can also be a thermoplastic resin such as a liquid crystal polymer.

[0072] Magnetoelectric conversion elements 20 and 22 detect a magnetic field in a specific direction that changes according to the measured current flowing through conductor 140b. Signal processing IC 100 amplifies the signal corresponding to the magnitude of the magnetic field and outputs the amplified signal via lead frame 150. Magnetoelectric conversion elements 20 and 22 are examples of elements that output a signal corresponding to the current flowing through lead frame 140. The semiconductor package can be, for example, an optocoupler, in addition to the current sensor 10. In the case where the semiconductor package is an optocoupler, the element can be an LED element that outputs light as a signal based on the current flowing through lead frame 140. In this case, the semiconductor package can further house a light-receiving element that receives the light output from the LED element within the sealing portion 130. Magnetoelectric conversion elements 20 and 22 are composed of compound semiconductors formed on a GaAs substrate and are chips cut into a square or rectangle when viewed from the Z-axis direction.

[0073] When detecting a magnetic field in the Z-axis direction, magnetoelectric conversion elements 20 and 22 can be Hall elements. When detecting a magnetic field in any axis of the XY plane, magnetoelectric conversion elements 20 and 22 can be magnetoresistive elements or fluxgate elements.

[0074] The signal processing IC 100 is a large-scale integrated circuit (LSI). The signal processing IC 100 is a signal processing circuit and a bias circuit formed on a Si substrate using monolithic Si semiconductors. The bias circuit applies a corrected drive current or drive voltage to the magnetoelectric conversion elements 20 and 22. The signal processing circuit processes the output signal corresponding to the magnitude of the magnetic field output from the magnetoelectric conversion elements 20 and 22. Based on the output signal, the signal processing circuit corrects the measured current flowing through the lead frame 140 and outputs an output signal representing an accurate current value via lead terminal 150a. Based on the difference between the output signals of magnetoelectric conversion elements 20 and 22, the signal processing circuit reduces the noise components contained in the output signals of magnetoelectric conversion elements 20 and 22, amplifies the noise-reduced output signals of magnetoelectric conversion elements 20 and 22, calculates the measured current value based on the amplified output signal, and outputs an output signal representing the current value.

[0075] In the first embodiment, an example of a current sensor 10 having two magnetoelectric conversion elements will be described, but the current sensor 10 only needs to have at least one magnetoelectric conversion element. In such a current sensor 10, it is necessary to ensure the insulation between the primary side lead terminal 140a and the secondary side lead terminal 150a. To maintain high insulation performance, the entire structure needs to be covered with an insulating material such as molding resin to ensure both spatial distance and creepage distance. Figure 2A As shown, the spatial distance k1 represents the shortest distance through space between two conductive parts (terminal parts). Figure 2B As shown, creepage distances k2 and k3 represent the shortest distances along the surface of the insulator between two conductive parts.

[0076] Additionally, when the voltage of the current source flowing through the primary side lead terminal 140a increases, it is necessary to extend the space distance and creepage distance. To ensure the space distance and creepage distance, for example, ... Figure 3 As shown, consider extending the distance between surfaces 130a and 130b of the sealing portion 130. However, if it is set as... Figure 3 The structure shown results in a larger current sensor 10, which can sometimes make it difficult to ensure sufficient space for installation.

[0077] Therefore, in the first embodiment, a semiconductor package such as a current sensor 10 is provided that can suppress the size of the sealing portion 130 from increasing relative to the required creepage distance and more reliably ensure insulation.

[0078] The sealing part 130 is a structure with six faces, such as a cuboid or a cube. In addition to the faces 130a and 130b that are opposite each other in the Y-axis direction, the sealing part 130 also has faces 130c and 130d that are opposite each other in the thickness direction (Z-axis direction), and faces 130e and 130f that are opposite each other in the X-axis direction.

[0079] In order to ensure the spatial distance and creepage distance between the primary side lead terminal 140a and the secondary side lead terminal 150a, the sealing part 130 may have at least one groove extending in the X or Z direction on at least one of the surfaces 130c to 130f.

[0080] The sealing portion 130 includes grooves 132 extending from surface 130e toward surface 130f on surfaces 130c and 130d, respectively. Surface 130c is the top surface of the sealing portion 130, and surface 130d is the bottom surface of the sealing portion 130. The top surface of the sealing portion 130 may be on the same side as the sensing surface of the magnetoelectric conversion elements 20 and 22, and the bottom surface of the sealing portion 130 may be on the opposite side to the sensing surface of the magnetoelectric conversion elements 20 and 22. The sealing portion 130 may include a plurality of grooves 132. The grooves 132 may be respectively provided on surfaces 130c and 130d along the X direction. The grooves 132 may be parallel to the X direction or not. The groove 132 is an example of a first groove.

[0081] The sealing portion 130 includes grooves 134 extending from surface 130c toward surface 130d on surfaces 130e and 130f, respectively. The sealing portion 130 may include a plurality of grooves 134. A plurality of grooves 132 communicate with the plurality of grooves 134. The grooves 134 may be disposed along the Z-direction on surfaces 130e and 130f, respectively. The grooves 134 may or may not be parallel to the Z-direction. The groove 134 is an example of a second groove.

[0082] By providing grooves 132 and 134 on the surface of the sealing portion 130, the creepage distance between the primary-side lead terminal 140a and the secondary-side lead terminal 150a can be extended compared to the case without grooves 132 and 134. Therefore, even if the width of the sealing portion 130 in the Y direction and the height in the Z direction are relatively short, the creepage distance required to ensure insulation between the primary-side lead terminal 140a and the secondary-side lead terminal 150a can be ensured. To ensure insulation, the width of the recesses in grooves 132 and 134 can be 1 mm or more. With this configuration, a current sensor 10 can be provided that can suppress the increase in size of the sealing portion 130 and more reliably ensure insulation.

[0083] The depth of grooves 132 and 134 can be 0.5 mm or more. Furthermore, the spacing W2 between any at least one groove in the Y-axis direction of the plurality of grooves 132 and 134 can be wider than the spacing W3 between the other grooves besides that at least one groove. This ensures sufficient marking space on the surface of the sealing portion 130 for representing text, etc. Additionally, when the current sensor 10 is mounted on the substrate 200, it can be easily attracted and picked up. Furthermore, by increasing the width of the central portion of the sealing portion 130, the center of gravity can be positioned at the center of the sealing portion 130, allowing the current sensor 10 to be stably mounted on the substrate 200. The magnetoelectric conversion elements 20 and 22 can be disposed between grooves 132 without overlapping with the grooves 132 when viewed from the top side. Alternatively, the magnetoelectric conversion elements 20 and 22 can also be configured to be housed within the grooves 132 when viewed from the top side. That is, the thickness of the sealing portion 130 opposite to the sensing surface of the magnetoelectric conversion elements 20 and 22 can be the same.

[0084] Here, the current sensor 10 is disposed on the substrate. To ensure insulation, the surface 130d of the sealing portion 130 opposite to the substrate needs to be separated from the substrate. Therefore, when viewed from the X-axis direction, the respective mounting surfaces of the lead terminals 140a and 150a can be located outside the thickness direction (Z-axis direction) relative to the surface 130d. That is, the lowermost surface of the surface 130d of the sealing portion 130 is located at a position higher than the respective mounting surfaces of the lead terminals 140a and 150a relative to the substrate. The distance h1 between the lowermost surface of the surface 130d of the sealing portion 130 and the substrate is preferably separated by more than 1 mm.

[0085] When viewed from the X-axis, the surface 132a of groove 132 can be inclined in a manner that expands from the bottom surface toward the opening. Similarly, when viewed from the Z-axis, the side surface 134a of groove 134 can be inclined in a manner that expands from the bottom surface toward the opening. The inclination angle θ of the surfaces 132a and 134a of grooves 132 and 134 relative to the bottom surface can be less than 85 degrees.

[0086] Figure 4A This is a schematic top view of the current sensor 10 of the first embodiment mounted on the substrate 200, viewed from the top surface (Z-axis direction) of the current sensor 10. Figure 4B This is observed from the side (X-axis direction) of the current sensor 10. Figure 4A The diagram shows a schematic top view of the current sensor 10 mounted on the substrate 200.

[0087] The substrate 200 has a primary side pad 202 with a primary side lead terminal 140a and electrically connected, and a secondary side pad 204 with a secondary side lead terminal 150a and electrically connected. The pads 202 and 204 are made of a conductive material such as metal.

[0088] Furthermore, the substrate 200 has a slit 210 at a position where it overlaps with the sealing portion 130 when viewed from the Z-axis direction. The substrate 200 may have the slit 210 at a position between the pads 202 and 204, opposite to the surface 130d of the sealing portion 130, and this slit 210 has at least a portion along the X-axis direction. The slit 210 may have a main portion 210a extending along the X-axis direction and extension portions 210b extending from both ends of the main portion 210a towards the pad 202 side along the Y-axis direction; the slit 210 may also be U-shaped. The length of the main portion 210a in the X-axis direction is longer than the total width of the pads 202 in the X-axis direction. Additionally, the width of the main portion 210a in the Y-axis direction and the width of the extension portions 210b in the X-axis direction are both 1 mm or more.

[0089] Therefore, insulation can be further ensured when the current sensor 10 is mounted on the substrate 200.

[0090] From the viewpoint of ensuring the insulation of the current sensor 10 mounted on the substrate 200, when viewed from the top surface side (Z-axis direction) of the sealing portion 130, the slit 210 preferably has a continuous portion intersecting with surfaces 130e and 130f. In this case, the length of the slit 210 in the X-axis direction is longer than the width of the sealing portion 130 in the X-axis direction. Furthermore, it is preferable that the length of the slit 210 in the X-axis direction is longer than the total width of the pads 202 in the X-axis direction.

[0091] Figure 5A This is a schematic top view of the current sensor 10 of the second embodiment, viewed from the top surface (Z-axis direction). Figure 5B yes Figure 5A A schematic top view of the current sensor 10 as seen from the side (X-axis direction). Figure 5C yes Figure 5A A schematic top view of the current sensor 10 as seen from the side (Y-axis direction).

[0092] In the current sensor 10 of the second embodiment, the lead terminal 140a has: a wide portion 141a, which is bent toward the substrate along the Z-axis direction from the surface 130a of the sealing portion 130; and a narrow portion 142a, which is narrower than the wide portion 141a in the X-axis direction and extends through the hole 131 of the substrate 200 along the Z-axis direction from the wide portion 141a. Additionally, the terminal portion 150a has a wide portion 151a bent toward the substrate 200 along the Z-axis direction from the surface 130b, and a narrow portion 152a that is narrower than the wide portion and extends through the hole of the substrate 200 along the Z-axis direction from the wide portion 151a. The diameter of the hole for the lead terminal 140a of the substrate 200 is narrower than the width of the wide portion 141a, and the diameter of the hole for the lead terminal 150a of the substrate 200 is narrower than the width of the wide portion 151a.

[0093] That is, the current sensor 10 of the second embodiment differs from the current sensor 10 of the first embodiment in that the lead terminals 140a and 150a are semiconductor packages in the form of dual in-line packages (DIP).

[0094] Wide portions 141a and 151a extend outward in the Z-axis direction from the surface 130d of the sealing portion 130, reaching the substrate 200. This creates a gap h1 between the surface 130d of the sealing portion 130 and the mounting surface of the substrate 200 on the side of the current sensor 10. This further ensures insulation when the current sensor 10 is mounted on the substrate 200.

[0095] Figure 6A This is a schematic top view of the current sensor 10 of the third embodiment, viewed from the top side (Z-axis direction). Figure 6B yes Figure 6A A schematic top view of the current sensor 10 as seen from the side (X-axis direction). Figure 7A This is a schematic top view of the current sensor 10 of the third embodiment mounted on the substrate 200, viewed from the top surface (Z-axis direction). Figure 7B This is observed from the side (X-axis direction) of the current sensor 10. Figure 7A The diagram shows a schematic top view of the current sensor 10 mounted on the substrate 200.

[0096] The current sensor 10 of the third embodiment differs from the current sensors 10 of the first and second embodiments in that the lead terminals 140a of the lead frame 140 extend linearly from the surface 130a along the Y-axis direction, and the lead terminals 150a of the lead frame 150 extend linearly from the surface 130b along the Y-axis direction. Furthermore, on the substrate 200 on which the current sensor 10 of the third embodiment is mounted, the width of the slit 210 in the X-axis and Y-axis directions is longer than the width of the sealing portion 130 in the X-axis and Y-axis directions. A portion of the sealing portion 130 is disposed within the slit 210. Therefore, insulation can be further ensured when the current sensor 10 is mounted on the substrate 200. Furthermore, the thickness in the Z-axis direction can be reduced when the current sensor 10 is mounted on the substrate 200.

[0097] In addition, the lead terminals 140a and 150a extend in a straight line without being formed, thereby shortening the lead length up to the solder joint where they are electrically connected to the substrate 200, and suppressing heat generation at the lead terminals 140a and 150a.

[0098] Even if the thickness of the lead terminal 140a is increased to withstand high current, no molding process is required, thus making the lead frame easy to process.

[0099] Furthermore, the contact area between the lead terminal 140a and the pad 202 of the substrate 200 can be increased, and the contact resistance between the lead terminal 140a and the pad 202 of the substrate 200 can be suppressed.

[0100] Figure 8A This is a schematic top view of the current sensor 10 of the fourth embodiment, viewed from the top side (Z-axis direction). Figure 8B yes Figure 8A A schematic top view of the current sensor 10 as seen from the side (X-axis direction). Figure 9 This is a schematic top view of the current sensor 10 of the fourth embodiment mounted on the substrate 200, viewed from the side (X-axis direction).

[0101] In the current sensor 10 of the fourth embodiment, when viewed from the X-axis direction, the lead terminal 140a has a portion 143a that is bent away from the surface 130d in an inclined direction between the Z-axis and Y-axis directions from the surface 130a of the sealing portion 130, and a portion 144a that is further bent along the Y-axis direction from the portion 143a. Furthermore, the portion 144a has a surface between itself and the substrate 200. The portion 143a can also be bent in such a way that it extends from the surface 130a along the Y-axis direction and is perpendicular to the surface 130d in the Z-axis direction without contacting the surface 130a.

[0102] When viewed from the X-axis direction, the lead terminal 150a has a portion 153a that is bent away from the surface 130d in an inclined direction between the Z-axis and Y-axis directions from the surface 130b of the sealing portion 130, and a portion 154a that is further bent along the Y-axis direction from the portion 153a. Furthermore, the portion 154a has a surface that is disposed between it and the substrate 200. The portion 153a can also be bent in such a way that it extends from the surface 130a along the Y-axis direction and is then bent away from the surface 130d perpendicularly in the Z-axis direction without contacting the surface 130a.

[0103] With this configuration, compared to the current sensor 10 of the third embodiment where the lead terminals 140a and 150a are straight, the sealing portion 130 can be further embedded in the slit 210, and the overall thickness of the current sensor 10 mounted on the substrate 200 can be further reduced.

[0104] Figure 10A This is a schematic top view of the current sensor 10 mounted on the substrate 200 of the fifth embodiment, as viewed from the top surface (Z-axis direction). Figure 10B It is mounted on Figure 10A A schematic top view of the current sensor 10 in the state of the substrate 200 shown, viewed from the side (X-axis direction).

[0105] Similar to the current sensor 10 of the third embodiment, the lead terminal 140a of the lead frame 140 extends linearly from the surface 130a along the Y-axis direction, and the lead terminal 150a of the lead frame 150 extends linearly from the surface 130b along the Y-axis direction. The lead terminal 140a has a hole 148a for inserting a bolt 160. The substrate 200 also has a hole 205 for inserting a bolt 160. The hole 148a can be a through hole or a U-shaped groove. The hole 148a can also be countersunk.

[0106] Additionally, on the back side of the substrate 200, opposite to the mounting surface where the pads 202 are provided, there are pads 203 for electrical connection to a power supply system that applies voltage to the lead frame 140. The lead terminals 140a of the lead frame 140 are electrically connected to the pads 203 on the back side of the substrate 200 via bolts 160. An inverter module 170, supplied with current flowing through the lead frame 140, can be mounted on the back side of the substrate 200. The current from the inverter module 170 can be supplied to a motor or similar device that serves as a drive source for a vehicle.

[0107] A bolt 160, inserted into a hole 148a provided at the front end of the lead terminal 140a, can be directly electrically connected to the inverter module 170. This also eliminates the need for the copper foil pattern used to electrically connect the inverter module 170 to the lead terminal 140a.

[0108] Alternatively, the pads 202 on the mounting surface of the substrate 200 may not be provided, but the presence of the pads 202 allows for fixation to the substrate 200 using solder joints with the lead terminals 140a. Furthermore, the presence of the pads 202 enhances heat dissipation.

[0109] Figure 11 This is a schematic top view of the current sensor 10 in another embodiment, viewed from the top surface (Z-axis direction). For example... Figure 11 As shown, the convex side surface 132a of the groove 132 of the sealing portion 130 can be chamfered. The surface 132a of the groove 132 of the sealing portion 130 can be rounded, and the radius of the arc of the machined surface can be 0.1 mm or more. In addition, as described above, the portion of the groove spacing W2, which is wider than the spacing W3 of other grooves, becomes a marking space, where text such as the model number 136 of the current sensor 10 can be engraved. Furthermore, the portion of the wider groove W2 can serve as an adsorption position for picking up the package.

[0110] Figure 12 This is a schematic cross-sectional view of the current sensor 10 in another embodiment, viewed from the side (X-axis direction). Figure 12 As shown, magnetoelectric conversion elements 22 and 22 can be configured via a support strip 180, such as a polyimide strip, bonded to the side of the lead frame 140 opposite to the side facing the signal processing IC 100. As described above, magnetoelectric conversion elements 22 and 22 are electrically connected to the signal processing IC 100 via wires 30. Furthermore, the signal processing IC 100 and the lead frame 150 are electrically connected via wires 108. Here, the slot 132 can be positioned so as not to overlap with wires 30 and 108 when viewed from above in the Z-axis direction. By setting the positional relationship between the slot 132 and wires 30 and 108 in this way, the maximum thickness of the current sensor 10 in the Z-axis direction can be minimized.

[0111] The present invention has been described above using embodiments, but the technical scope of the present invention is not limited to the scope described in the above embodiments. It will be apparent to those skilled in the art that various modifications or improvements can be made to the above embodiments. As can be seen from the claims, such modifications or improvements are also included within the technical scope of the present invention.

[0112] It should be noted that the execution order of actions, processes, steps, and stages in the apparatus, system, program, and method shown in the claims, specification, and drawings can be implemented in any order, as long as it is not specifically stated as "before" or "prior to" and the output of an earlier process is not used in a later process. Even if the flow of actions in the claims, specification, and drawings is described using terms such as "firstly" or "next" for convenience, it does not mean that they must be implemented in that order.

[0113] Label Explanation

[0114] 10 Current Sensor

[0115] 20, 22 Magnetoelectric conversion elements

[0116] 30, 108 wires

[0117] 130 Sealing section

[0118] 131 holes

[0119] Slots 132 and 134

[0120] 140 lead frame

[0121] 140a lead terminal

[0122] 140b conductor

[0123] 141a Wide section

[0124] 142a Narrow section

[0125] Parts 143a and 144a

[0126] 148a Hole

[0127] 150 lead frame

[0128] 150A lead terminal

[0129] 150b conductor

[0130] 151a Wide Section

[0131] 152a Narrow section

[0132] Parts 153a and 154a

[0133] 160 bolts

[0134] 170 Inverter Module

[0135] 200 substrates

[0136] Pads 202, 203, and 204

[0137] 205 holes

[0138] 210 Slit

[0139] 210a Main Part

[0140] 210b Extension

Claims

1. A semiconductor package, characterized in that, The semiconductor package includes: First lead frame; The component outputs a signal corresponding to the current flowing through the first lead frame; The second lead frame is electrically insulated from the first lead frame and outputs a signal corresponding to the signal from the element; as well as The sealing portion, comprising sealing the element, a portion of the first lead frame, and a portion of the second lead frame with resin, The terminal portion of the first lead frame is exposed from the first side of the sealing portion. The terminal portion of the second lead frame is exposed from the second surface of the sealing portion, which is opposite to the first surface in the first direction. The sealing portion has at least one groove on at least one side other than the first surface and the second surface, extending in a second direction intersecting the first direction.

2. The semiconductor package according to claim 1, characterized in that, The sealing portion includes a third and a fourth surface that are opposite to each other in the thickness direction, and a fifth and a sixth surface that are opposite to each other in the second direction that intersects the first direction and the thickness direction respectively. The at least one groove on the third and fourth surfaces respectively includes a first groove extending from the fifth surface toward the sixth surface.

3. The semiconductor package according to claim 2, characterized in that, The first groove extends along the second direction.

4. The semiconductor package according to claim 2, characterized in that, The at least one groove on the fifth and sixth surfaces respectively includes a second groove extending from the third surface toward the fourth surface.

5. The semiconductor package according to claim 4, characterized in that, The second groove extends along the thickness direction.

6. The semiconductor package according to claim 4, characterized in that, The first slot is connected to the second slot.

7. The semiconductor package according to claim 1, characterized in that, The sealing portion includes a third and a fourth surface that are opposite to each other in the thickness direction, and a fifth and a sixth surface that are opposite to each other in the second direction that intersects the first direction and the thickness direction respectively. The at least one groove includes a groove that runs continuously around the third, fourth, fifth, and sixth surfaces.

8. The semiconductor package according to claim 1, characterized in that, The width of the recess of the at least one groove is 1 mm or more.

9. The semiconductor package according to claim 1, characterized in that, The depth of the at least one groove is 0.5 mm or more.

10. The semiconductor package according to claim 1, characterized in that, The sealing portion includes a plurality of grooves as the at least one groove, wherein the spacing between at least one of the plurality of grooves is wider than the spacing between the other grooves in the plurality of grooves.

11. The semiconductor package according to claim 1, characterized in that, The sealing portion includes a plurality of grooves as the at least one groove, wherein the spacing between the grooves in the central portion in the first direction is wider than the spacing between the grooves outside the central portion.

12. The semiconductor package according to claim 1, characterized in that, The terminal portion of the first lead frame is electrically connected to a first power system, and the terminal portion of the second lead frame is connected to a second power system that applies a voltage lower than that of the first power system.

13. The semiconductor package according to claim 2, characterized in that, When viewed from the second direction, the respective mounting surfaces of the terminal portions of the first lead frame and the second lead frame are located outside the thickness direction relative to the third or fourth surface.

14. The semiconductor package according to claim 1, characterized in that, When viewed from the second direction, the side of the at least one groove is inclined in a manner that expands from the bottom surface toward the opening.

15. The semiconductor package according to claim 14, characterized in that, The inclination angle of the side of the at least one groove relative to the bottom surface is less than 85 degrees.

16. The semiconductor package according to claim 1, characterized in that, The convex side of the at least one groove has been chamfered or rounded by more than 0.1 mm.

17. The semiconductor package according to claim 1, characterized in that, The sealing portion uses molding resin to seal the element, a portion of the first lead frame, and a portion of the second lead frame.

18. The semiconductor package according to claim 1, characterized in that, The element is at least one magnetoelectric conversion element that outputs a signal corresponding to the magnitude of the magnetic field generated by the current flowing through the first lead frame.

19. The semiconductor package according to claim 16, characterized in that, The semiconductor package further includes a signal processing IC that processes the signal output from the at least one magnetoelectric conversion element and outputs the processed signal via the second lead frame. The sealing part also seals the signal processing IC.

20. The semiconductor package according to claim 19, characterized in that, The at least one magnetoelectric conversion element is electrically connected to the signal processing IC via a first wire. The signal processing IC is electrically connected to the second lead frame via a second wire. The at least one slot is positioned so as not to overlap with the first and second conductors when viewed from above.

21. The semiconductor package according to claim 1, characterized in that, The terminal portion of the first lead frame extends linearly from the first surface along the first direction, and the terminal portion of the second lead frame extends linearly from the second surface along the first direction.

22. The semiconductor package according to claim 1, characterized in that, The terminal portion of the first lead frame has a through hole for threading the terminal portion of the first lead frame to the substrate on which the semiconductor package is mounted via bolts.

23. A semiconductor package module, characterized in that, The module has the following features: The semiconductor package according to any one of claims 1 to 22; and A substrate, on which the semiconductor package is mounted, The substrate includes a slit at a location where it overlaps with the sealing portion when viewed from the thickness direction of the sealing portion, the slit having at least a portion along the second direction.

24. The semiconductor package module according to claim 23, characterized in that, The slit has a continuous portion that intersects with the fifth and sixth surfaces of the sealing portion, which are opposite to each other in the second direction, when viewed from the thickness direction of the sealing portion.

25. The semiconductor package module according to claim 23, characterized in that, The substrate has: The first pad is electrically connected to the first lead frame; and The second pad is electrically connected to the second lead frame. The slit is positioned between the first pad and the second pad.

26. The semiconductor package module according to claim 25, characterized in that, The width of the slit in the second direction is longer than the combined width of the first pad and the second pad in the second direction.

27. The semiconductor package module according to claim 23, characterized in that, The width of the slit is 1 mm or more.

28. The semiconductor package module according to claim 23, characterized in that, The sealing portion includes a third and a fourth surface that are opposite to each other in the thickness direction, and a fifth and a sixth surface that are opposite to each other in the second direction that intersects the first direction and the thickness direction respectively. The at least one groove on the third and fourth surfaces respectively includes a first groove extending from the fifth surface toward the sixth surface. The fourth surface is opposite to the substrate. The fourth surface of the sealing portion is located relative to the substrate at a position higher than the respective mounting surfaces of the terminal portions of the first lead frame and the second lead frame.

29. The semiconductor package module according to claim 23, characterized in that, The terminal portion of the first lead frame has: a first portion that is bent toward the substrate from the first surface along the thickness direction; and a second portion that is thinner than the first portion and extends further along the thickness direction through a hole in the substrate. The terminal portion of the second lead frame has a third portion that is bent from the second surface toward the substrate along the thickness direction; And a fourth portion, thinner than the third portion and extending further along the thickness direction through a hole in the substrate, The diameter of the hole penetrating the second portion of the substrate is narrower than the width of the first portion, and the diameter of the hole penetrating the fourth portion of the substrate is narrower than the width of the third portion.

30. The semiconductor package module according to claim 23, characterized in that, The slit is wider than the sealing portion in the first and second directions, and a portion of the sealing portion is disposed within the slit.

31. The semiconductor package module according to claim 30, characterized in that, The terminal portion of the first lead frame extends linearly from the first surface along the first direction, and the terminal portion of the second lead frame extends linearly from the second surface along the first direction.

32. The semiconductor package module according to claim 30, characterized in that, When viewed from the second direction, the terminal portion of the first lead frame has a first portion and a second portion. The first portion is bent away from the bottom surface of the sealing portion from the first surface along the thickness direction or away from the bottom surface of the sealing portion along an inclined direction between the thickness direction and the first direction. The second portion is bent away from the first portion along the first direction. The terminal portion of the first lead frame has a mounting surface with respect to the substrate in the second portion. When viewed from the second direction, the terminal portion of the second lead frame has a third portion and a fourth portion. The third portion is bent away from the bottom surface of the sealing portion from the second surface along the thickness direction or away from the bottom surface of the sealing portion along an inclined direction between the thickness direction and the first direction. The fourth portion is bent away from the third portion along the first direction. The terminal portion of the second lead frame has a mounting surface between itself and the substrate in the fourth portion.

33. The semiconductor package module according to claim 32, characterized in that, The terminal portion of the first lead frame has a through hole for threading the terminal portion of the first lead frame to the substrate via bolts. The terminal portion of the first lead frame is disposed on the mounting surface of the substrate, and a pad is provided on the side of the substrate opposite to the mounting surface. The pad is used for electrical connection with a power supply system that applies voltage to the first lead frame, and the terminal portion of the first lead frame is electrically connected to the pad via the bolt.

Images