Semiconductor device thermal analysis sample stage and thermal emission microscope
By designing a semiconductor device thermal analysis sample stage with a low-noise base, an insulating base, and a temperature control component, the problem that existing technologies cannot meet the thermal analysis requirements of ultra-high voltage and ultra-high current semiconductor power devices has been solved, achieving high-precision and safe thermal distribution detection.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- HUBEI JIUFENGSHAN LAB
- Filing Date
- 2025-07-17
- Publication Date
- 2026-05-15
AI Technical Summary
Existing thermal emission microscope sample stages cannot meet the thermal analysis requirements of ultra-high voltage and ultra-high current semiconductor power devices, especially under high voltage and high current conditions, there are problems such as leakage current, electrical breakdown and detection error.
A semiconductor device thermal analysis sample stage was designed, comprising a low-noise base, an insulating base, and a temperature control component. The low-noise base provides a low leakage current and low background noise environment, the insulating base provides electrical isolation, and the temperature control component regulates the temperature through a heat dissipation device and a temperature measuring device. Combined with an insulating baffle to prevent discharge channels, it ensures safety and reliability under high voltage.
It enables high-precision thermal distribution detection of high-power devices, avoiding leakage current, electrical breakdown and detection errors, improving the safety and reliability of detection, and supporting thermal analysis under high voltage and high current conditions.
Smart Images
Figure CN224247983U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of thermal emission testing technology, specifically to a thermal analysis sample stage for semiconductor devices and a thermal emission microscope. Background Technology
[0002] Thermal emission microscopy (TEM), also known as infrared emission microscopy (IREM) or lock-in thermal imaging (LIT), is a non-contact, high-resolution technique used to analyze heat distribution and defects in semiconductor devices. It detects the infrared (IR) radiation emitted by active devices under electrical bias, enabling fault analysis, hotspot detection, and thermal performance evaluation. Currently, thermal emission microscopy is widely used for thermal analysis of semiconductor components and integrated circuits.
[0003] With the increasing demand for green energy such as new energy vehicles, the development of ultra-high power devices, especially third-generation semiconductor power devices, necessitates greater demands for thermal analysis of power devices operating under high voltage and high current conditions. Currently, the sample stages of commercially available thermal emission microscopes are designed for applications below 100V, and cannot meet the needs of ultra-high voltage and ultra-high current semiconductor power devices. Utility Model Content
[0004] Based on the above description, this utility model provides a semiconductor device thermal analysis sample stage and a thermal emission microscope to solve the problem of how to thermally emit and detect ultra-high voltage and ultra-high current semiconductor power devices.
[0005] The technical solution of this utility model to solve the above-mentioned technical problems is as follows:
[0006] This utility model provides a semiconductor device thermal analysis sample stage, including a low-noise base, an insulating base, and a temperature control component. The insulating base is fixedly connected to the upper side of the low-noise base. The temperature control component includes a heat dissipation device and a temperature measuring device. The heat dissipation device is disposed above the insulating base. A portion of the temperature measuring device abuts against the heat dissipation device to detect the temperature of the heat dissipation device. The temperature measuring device is electrically connected to the heat dissipation device to adjust the power of the heat dissipation device. The upper side of the heat dissipation device is used to support the semiconductor device and reduce its temperature.
[0007] Furthermore, the heat dissipation device is also equipped with an insulating baffle.
[0008] Furthermore, the insulating baffle includes a polyethylene baffle and a polytetrafluoroethylene baffle.
[0009] Furthermore, the insulating base includes one of a glass base, a ceramic base, and a high-temperature plastic base.
[0010] Furthermore, the low-noise base is a metal base.
[0011] Furthermore, the heat dissipation device includes one of a heat sink, a heat sink, an air-cooled heat dissipation device, and a water-cooled heat dissipation device.
[0012] Furthermore, the temperature measuring device includes at least one of an electronic controller, a thermocouple controller, and a resistance temperature detector (RTD) controller.
[0013] Furthermore, the low-noise base and the insulating base are connected by an insulating screw.
[0014] This invention also proposes a thermal emission microscope, including a semiconductor device thermal analysis sample stage as described above.
[0015] Compared with the prior art, the technical solution of this application has the following beneficial technical effects:
[0016] 1. In the technical solution of this application, the thermal distribution data of high-voltage, high-current, high-power devices is measured by using a semiconductor device thermal analysis sample stage in conjunction with a thermal emission microscope, and the data is exported for thermal analysis simulation, thereby optimizing and improving high-power devices and their packaging processes.
[0017] 2. In the technical solution of this application, by employing a low-noise base, the semiconductor device thermal analysis sample stage can provide a detection environment with low leakage current and low background noise when used to support the device under test and detect its planar temperature distribution; by employing an insulating base, electrical isolation is provided for the device under test, preventing current leakage and electrical breakdown that may occur under high voltage; by employing a temperature control component, the temperature of the device under test can be actively adjusted when detecting its temperature, avoiding thermal runaway caused by excessively high local temperatures. The heat dissipation device is used to reduce the temperature of the device under test, and the temperature measuring device is used to measure the temperature of the heat dissipation device to adjust its operating power. The higher the temperature, the higher the power of the heat dissipation device and the higher the heat dissipation efficiency, thereby reducing the temperature difference between the device under test and the environment, avoiding air convection, and thus reducing detection errors caused by air convection.
[0018] 3. In the technical solution of this application, by setting an insulating baffle, the discharge channel that may be generated between the sample to be tested and the temperature control component is blocked, thereby improving the insulation reliability. At the same time, the humidity of the sample environment is controlled to ensure that the sample will not discharge under high voltage when it is exposed to the air and is very close to the heat dissipation system. Attached Figure Description
[0019] Figure 1 A plan view of an embodiment of the thermal analysis sample stage provided by this utility model;
[0020] Figure 2A plan view of another embodiment of the thermal analysis sample stage provided by this utility model;
[0021] Figure 3 This is a planar structural diagram of the sample to be tested on the thermal analysis sample stage in one embodiment of the present invention;
[0022] Figure 4 This is a photograph of the sample to be tested in one embodiment of the present invention;
[0023] Figure 5 This is a thermal field diagram of the sample to be tested on the thermal analysis sample stage in one embodiment of the present invention;
[0024] Figure 6 This is thermal distribution data of the sample to be tested in one embodiment of this utility model.
[0025] The attached diagram lists the components represented by each number as follows:
[0026] 100. Thermal analysis sample stage; 1. Low-noise base; 2. Insulating base; 3. Temperature control components; 31. Heat dissipation device; 32. Temperature measuring device; 4. Insulating baffle. Detailed Implementation
[0027] To facilitate understanding of this application, a more complete description will be provided below with reference to the accompanying drawings, which illustrate embodiments of the present application. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that the disclosure of this application will be thorough and complete.
[0028] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the specification of this application is for the purpose of describing particular embodiments only and is not intended to be limiting of this application.
[0029] It is understood that spatial relation terms such as "below," "under," "below," "below," "above," "over," etc., can be used here to describe the relationship between one element or feature shown in the figure and other elements or features. It should be understood that, in addition to the orientation shown in the figure, spatial relation terms also include different orientations of the device in use and operation. For example, if the device in the figure is flipped, the element or feature described as "below" or "under" or "below" of other elements or features will be oriented "over" of other elements or features. Therefore, the exemplary terms "below" and "under" can include both upper and lower orientations. Furthermore, the device may also include other orientations (e.g., rotated 90 degrees or other orientations), and the spatial descriptive terms used herein will be interpreted accordingly.
[0030] It should be noted that when one element is considered to be "connected" to another element, it can be directly connected to the other element or connected to the other element through an intermediary element. In the following embodiments, "connection" should be understood as "electrical connection," "communication connection," etc., if the connected circuits, modules, units, etc., have the transmission of electrical signals or data between them.
[0031] With the increasing demand for green energy such as new energy vehicles, and the development of ultra-high power devices, especially third-generation semiconductor power devices, there is a growing need for thermal analysis of power devices operating under high voltage and high current conditions. Currently, the sample stages of commercially available thermal emission microscopes are designed for applications below 100V, and cannot meet the requirements of ultra-high voltage and ultra-high current semiconductor power devices. To address this application need, this invention proposes a sample stage design for the analysis of ultra-high voltage and ultra-high current semiconductor power devices.
[0032] In view of this, see Figure 1 This utility model provides a semiconductor device thermal analysis sample stage 100, including a low-noise base 1, an insulating base 2, and a temperature control component 3. The insulating base 2 is fixedly connected to the upper side of the low-noise base 1. The temperature control component 3 includes a heat dissipation device 31 and a temperature measuring device 32. The heat dissipation device 31 is disposed above the insulating base 2. A portion of the temperature measuring device 32 abuts against the heat dissipation device 31 to detect the temperature of the heat dissipation device 31. The temperature measuring device 32 is electrically connected to the heat dissipation device 31 to adjust the power of the heat dissipation device 31. The upper side of the heat dissipation device 31 is used to support the semiconductor device and reduce its temperature.
[0033] In the technical solution of this utility model, by employing a low-noise base 1, the semiconductor device thermal analysis sample stage 100 can provide a detection environment with low leakage current and low background noise when used to support the device under test and detect its planar temperature distribution. By employing an insulating base 2, electrical isolation is provided for the device under test, preventing current leakage and electrical breakdown that may occur under high voltage. By employing a temperature control component 3, the temperature of the device under test can be actively adjusted when detecting its temperature, avoiding thermal runaway caused by excessively high local temperatures. The heat dissipation device 31 is used to reduce the temperature of the device under test, and the temperature measuring device 32 is used to measure the temperature of the heat dissipation device 31 to adjust its operating power. The higher the temperature, the higher the power of the heat dissipation device 31 and the higher the heat dissipation efficiency, thereby reducing the temperature difference between the device under test and the environment, avoiding air convection, and thus reducing detection errors caused by air convection.
[0034] For further details, please refer to [link / reference]. Figure 2 The heat dissipation device 31 is also provided with an insulating baffle 4.
[0035] In the technical solution of this utility model, by setting an insulating baffle 4, the discharge channel that may be generated between the sample to be tested and the temperature control component 3 is blocked, thereby improving the insulation reliability. At the same time, the humidity of the sample environment is controlled to ensure that the sample will not discharge under high voltage when it is exposed to the air and is very close to the heat dissipation system.
[0036] Furthermore, the insulating baffle 4 includes a polyethylene baffle and a polytetrafluoroethylene baffle.
[0037] In the technical solution of this utility model, polyethylene material has excellent dielectric properties, corrosion resistance and processability, and is suitable for occasions with high requirements for electrical isolation; while polytetrafluoroethylene material has higher temperature resistance, aging resistance and extremely low coefficient of friction, and can maintain stable insulation performance in harsh environments; by selecting the above materials as insulating baffle 4, it is possible to effectively prevent safety hazards such as current leakage, short circuit or electric arc, improve the safety and reliability of equipment operation, and extend the service life of the product.
[0038] Furthermore, the insulating base 2 includes one of a glass base, a ceramic base, and a high-temperature plastic base.
[0039] In the technical solution of this utility model, the glass base has good insulation, corrosion resistance and dimensional stability; the ceramic base has higher high temperature resistance and dielectric strength, and is suitable for electrical environments with high reliability requirements; the high temperature plastic base maintains good insulation performance while also having light weight and strong impact resistance; by selecting any of the above materials as the insulating base 2, the current path can be effectively blocked to prevent safety accidents such as leakage and short circuit, thereby improving the safety, stability and environmental adaptability of the equipment operation.
[0040] Furthermore, the low-noise base 1 is a metal base.
[0041] In the technical solution of this utility model, by using a metal base, an extremely low background noise level can be maintained under the thermal emission microscope inspection environment, effectively avoiding interference signals caused by material defects, surface contamination or unexpected electron emission; by using this low-noise metal base, the signal-to-noise ratio of the inspection image can be significantly improved, the accuracy and sensitivity of defect localization can be enhanced, thereby improving the identification efficiency and analysis reliability of internal anomalies (such as short circuits, leakage current, hot spots, etc.) of semiconductor devices.
[0042] Furthermore, the heat dissipation device 31 includes one of a heat sink, a heat sink, an air-cooled heat dissipation device 31, and a water-cooled heat dissipation device 31.
[0043] In the technical solution of this utility model, the heat dissipation device 31 is selected from one of a heat sink, a heat sink, an air-cooled heat dissipation device 31, or a water-cooled heat dissipation device 31. It can be flexibly configured according to the power density and working environment of the equipment to achieve efficient and reliable heat dissipation performance. The heat sink has good thermal conductivity and heat capacity, and can quickly absorb and evenly distribute heat; the heat sink increases the heat exchange area to improve the efficiency of natural convection and radiation heat dissipation; the air-cooled heat dissipation device 31 uses a fan to force airflow to achieve active heat dissipation with simple structure and convenient maintenance; the water-cooled heat dissipation device 31 has higher heat conduction efficiency, is suitable for high heat load scenarios, and can achieve stronger cooling capacity in a limited space.
[0044] Furthermore, the temperature measuring device 32 includes at least one of an electronic controller, a thermocouple controller, and a resistance temperature detector (RTD) controller.
[0045] In the technical solution of this utility model, the temperature measuring device 32 includes at least one of an electronic controller, a thermocouple controller, and a resistance temperature detector (RTD) controller, enabling high-precision acquisition and real-time control of temperature parameters. The electronic controller possesses data processing and system regulation functions, enabling intelligent temperature control management; the thermocouple controller is suitable for high-temperature measurement environments, offering advantages such as fast response speed and a wide temperature measurement range; and the RTD controller provides higher measurement accuracy and stability in the medium and low temperature ranges. By selecting any one or more combinations of the above controllers, the temperature measuring system can be flexibly configured according to different application scenarios, effectively improving the accuracy, reliability, and adaptability of temperature detection, thereby ensuring the safety and stability of equipment operation and meeting the temperature control requirements under complex working conditions.
[0046] Furthermore, the low-noise base 1 and the insulating base 2 are connected by an insulating screw.
[0047] In the technical solution of this utility model, the low-noise base 1 and the insulating base 2 are connected by insulating screws, which not only achieves a stable assembly between the two, but also effectively blocks the leakage current path that may exist between the bases by taking advantage of the electrical isolation characteristics of the insulating screws, thereby further improving the electrical safety of the overall structure.
[0048] This utility model also proposes a thermal emission microscope, see reference. Figure 3 This includes the semiconductor device thermal analysis sample stage 100 as described above.
[0049] Example 1
[0050] This embodiment provides a semiconductor device thermal analysis sample stage, the assembly steps of which are as follows:
[0051] 1. Unpack the high-power packaged device; the unpacked sample is as follows: Figure 3 As shown;
[0052] 2. After stripping the edge insulation layer of one side of the wire with wire strippers, solder the wire to the opened device. Connect the two red wires to the Drain and Gate terminals of the device, and connect the two black wires to the Source terminal.
[0053] 3. Apply a uniform layer of thermally conductive silicone to the bottom of the opened power device (DUT), fix it on the SEM sample stage, and secure it with M4 screws to ensure that the sample is firmly fixed and will not fall off during subsequent power-on process;
[0054] 4. After applying a uniform layer of thermally conductive silicone to the underside of the SEM sample stage, adhere it to the insulating glass wafer. The entire secondary sample stage is now complete.
[0055] 5. Secure the entire apparatus to the sample stage of the thermal emission microscope using ceramic screws, as shown in the schematic diagram. Figure 4 ;
[0056] 6. Connect the source, drain, and gate of the power device to the built-in and external voltage sources of the thermal emission microscope, respectively. Set the corresponding Vg and Vs. Thermal imaging of the power device can then be performed using the thermal mapping function of the thermal emission microscope. Figure 5 Thus, the thermal distribution data of high-power electronic devices can be obtained. Figure 6 This allows for thermal analysis of high-power devices operating at high voltage and ultra-high voltage and high current.
[0057] The above description is only a preferred embodiment of the present utility model and is not intended to limit the present utility model. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present utility model should be included within the protection scope of the present utility model.
[0058] In summary, the technical solution of this application has the following beneficial technical effects:
[0059] 1. In the technical solution of this application, the thermal distribution data of high-voltage, high-current, high-power devices is measured by thermal emission microscopy equipment and exported for thermal analysis and simulation, thereby optimizing and improving high-power devices and their packaging processes.
[0060] 2. In the technical solution of this application, by employing a low-noise base, the semiconductor device thermal analysis sample stage can provide a detection environment with low leakage current and low background noise when used to support the device under test and detect its planar temperature distribution; by employing an insulating base, electrical isolation is provided for the device under test, preventing current leakage and electrical breakdown that may occur under high voltage; by employing a temperature control component, the temperature of the device under test can be actively adjusted when detecting its temperature, avoiding thermal runaway caused by excessively high local temperatures. The heat dissipation device is used to reduce the temperature of the device under test, and the temperature measuring device is used to measure the temperature of the heat dissipation device to adjust its operating power. The higher the temperature, the higher the power of the heat dissipation device and the higher the heat dissipation efficiency, thereby reducing the temperature difference between the device under test and the environment, avoiding air convection, and thus reducing detection errors caused by air convection.
[0061] 3. In the technical solution of this application, by setting an insulating baffle, the discharge channel that may be generated between the sample to be tested and the temperature control component is blocked, thereby improving the insulation reliability. At the same time, the humidity of the sample environment is controlled to ensure that the sample will not discharge under high voltage when it is exposed to the air and is very close to the heat dissipation system.
Claims
1. A sample stage for thermal analysis of semiconductor devices, characterized in that, include: Low-noise base; An insulating base is fixedly connected to the upper side of the low-noise base; A temperature control component includes a heat dissipation device and a temperature measuring device. The heat dissipation device is located above the insulating base. A portion of the temperature measuring device abuts against the heat dissipation device to detect the temperature of the heat dissipation device. The temperature measuring device is electrically connected to the heat dissipation device to adjust the power of the heat dissipation device. The upper side of the heat dissipation device is used to support semiconductor devices and reduce their temperature.
2. The semiconductor device thermal analysis sample stage according to claim 1, characterized in that, The heat dissipation device is also equipped with an insulating baffle.
3. The semiconductor device thermal analysis sample stage according to claim 2, characterized in that, The insulating baffle includes a polyethylene baffle and a polytetrafluoroethylene baffle.
4. The semiconductor device thermal analysis sample stage according to claim 1, characterized in that, The insulating base includes one of a glass base, a ceramic base, and a high-temperature plastic base.
5. The semiconductor device thermal analysis sample stage according to claim 1, characterized in that, The low-noise base is a metal base.
6. The semiconductor device thermal analysis sample stage according to claim 1, characterized in that, The heat dissipation device includes one of the following: heat sink, heat sink, air-cooled heat dissipation device, and water-cooled heat dissipation device.
7. The semiconductor device thermal analysis sample stage according to claim 1, characterized in that, The temperature measuring device includes at least one of an electronic controller, a thermocouple controller, and a resistance temperature detector (RTD) controller.
8. The semiconductor device thermal analysis sample stage according to claim 1, characterized in that, The low-noise base and the insulating base are connected by insulating screws.
9. A thermal emission microscope, characterized in that, Includes the semiconductor device thermal analysis sample stage as described in any one of claims 1 to 8.