Far-end plasma source base and semiconductor process equipment

Abstract

The utility model discloses a far-end plasma source base and semiconductor process equipment. The far-end plasma source pedestal comprises an upper pedestal and a lower pedestal. A gas guide pipeline and a ventilation device located below the gas guide pipeline are arranged in the lower base. Plasma enters the gas guide pipeline from the upper base. The ventilation device comprises at least one gas uniformizing layer, at least one protective gas inlet and at least one group of gas channels. The at least one protective gas inlet is located at the bottom of the at least one gas uniformizing layer, and the at least one group of gas channels are communicated with the at least one gas uniformizing layer and the gas guide pipeline.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor equipment manufacturing, and in particular to the design of a remote plasma source base. Background Technology

[0002] A remote plasma source (RPS), also known as a remote high-density plasma generator, is a core piece of equipment in semiconductor and chip manufacturing processes. The RPS uses radio frequency or microwaves to excite gas, generating plasma. The free radicals (activated gas molecules) produced after gas excitation effectively clean silicon dust or particulate matter deposited inside the chip structure. The RPS is typically positioned above the process chamber, and it delivers plasma into the chamber via a remote plasma transport channel.

[0003] For example, in plasma-enhanced chemical vapor deposition (PECVD) systems, when the process chamber needs cleaning after the process, a remote plasma source generates F-ion plasma to clean the thin film inside the chamber. However, because F-ions are highly corrosive, the surfaces of components along their transport path are easily corroded, generating particles that contaminate the wafer. The remote plasma source (RPS) base is the first component to be bombarded by the plasma, making its surface most susceptible to corrosion.

[0004] Therefore, there is an urgent need for a technical solution that can reduce plasma bombardment and corrosion. Utility Model Content

[0005] In order to reduce the surface of the remote plasma source base from being bombarded and corroded by plasma and to improve particulate contamination inside the cavity, this utility model provides a remote plasma source base and semiconductor process equipment.

[0006] This utility model provides a remote plasma source base, including an upper base and a lower base.

[0007] The lower base has a gas guiding pipe and a ventilation device located below the gas guiding pipe. Plasma enters the gas guiding pipe from the upper base.

[0008] The ventilation device includes at least one uniform air layer, at least one protective gas inlet, and at least one set of gas channels.

[0009] The at least one protective gas inlet is located at the bottom of the at least one gas equalization layer, and the at least one set of gas channels are connected to the at least one gas equalization layer and the gas guiding pipeline.

[0010] In one embodiment, the at least one gas equalization layer includes a first gas equalization layer and a second gas equalization layer. The at least one set of gas channels includes a first set of gas channels and a second set of gas channels. The at least one protective gas inlet is located at the bottom of the first gas equalization layer. One end of the first set of gas channels communicates with the top of the first gas equalization layer, and the other end communicates with the bottom of the second gas equalization layer. One end of the second set of gas channels communicates with the bottom of the gas guiding conduit, and the other end communicates with the top of the second gas equalization layer.

[0011] In one embodiment, the cavity space within the second gas uniform layer is larger than the cavity space within the first gas uniform layer.

[0012] In one embodiment, the number of gas channels in the second group of gas channels is greater than the number of gas channels in the first group of gas channels.

[0013] In one embodiment, the upper base has a plasma transport conduit inside. The gas guiding conduit has a first end located at the top, and second and third ends located on the left and right sides, respectively. The first end is connected to the lower end of the plasma transport conduit. The plasma enters from the plasma transport conduit at the first end and exits from the second and third ends.

[0014] In one embodiment, the end of the plasma transmission pipeline is horn-shaped, with the larger opening end of the horn-shaped pipeline connected to the first end.

[0015] In one embodiment, the end of the second end is horn-shaped, with the smaller opening of the horn-shaped end facing outwards; the end of the third end is horn-shaped, with the smaller opening of the horn-shaped end facing outwards.

[0016] In one embodiment, the connection between the first end and the second end is a rounded corner structure, and the connection between the first end and the third end is a rounded corner structure.

[0017] In one embodiment, while the plasma enters the first end from the upper base and exits from the second and third ends, the protective gas is introduced into the lower base from the at least one protective gas inlet.

[0018] This utility model also provides a semiconductor process apparatus, including a remote plasma generator (RPS), a remote plasma source base as described above, a first gas delivery pipeline, a second gas delivery pipeline, and a dual process chamber.

[0019] Remote plasma generators (RPS) are used to generate plasma.

[0020] The remote plasma source base supports the remote plasma generation equipment.

[0021] One end of the first gas delivery pipeline is connected to the second end of the remote plasma source base, and the other end is connected to one of the chambers in the dual process chambers.

[0022] One end of the second gas delivery pipeline is connected to the third end of the remote plasma source base, and the other end is connected to another chamber in the dual process chambers.

[0023] The semiconductor process equipment may also include a protective gas generating device for generating a protective gas that is transmitted to a protective gas inlet at the bottom of a remote plasma source base.

[0024] The remote plasma source base and semiconductor process equipment provided by this utility model have the following beneficial technical effects:

[0025] Firstly, this utility model designs the remote plasma source base as a split structure, which can make the internal flow channel of the base into a horn hole structure and round the corners. The horn hole structure can increase the cross-sectional area of ​​the flow channel, reduce the plasma flow velocity, and reduce the impact corrosion of the plasma on the surface of the base.

[0026] Secondly, this utility model adds a vent hole to the bottom surface of the remote plasma source base. When plasma flows through, protective gas is introduced from the bottom surface of the base. The introduction of protective gas reduces the impact of plasma on the bottom surface, thereby protecting the parts.

[0027] Thirdly, the air passage on the bottom surface of the remote plasma source base of this utility model can be uniformly circulated multiple times to ensure that the protective gas is more evenly distributed and has less impact on the plasma flow field. Furthermore, the flow field and flow rate of the protective gas can be adjusted by changing the structure and arrangement of the air passage. Attached Figure Description

[0028] The above-described utility model and the following detailed embodiments will be better understood when read in conjunction with the accompanying drawings. It should be noted that the drawings are merely examples of the claimed utility model. In the drawings, the same reference numerals represent the same or similar elements.

[0029] Figure 1 A schematic diagram showing the application environment of a remote plasma source base according to an embodiment of the present invention is provided.

[0030] Figure 2 A cross-sectional view of a remote plasma source base according to an embodiment of the present invention is shown;

[0031] Figure 3 A cross-sectional view of a prior art remote plasma source base is shown;

[0032] Figure 4 A cross-sectional view of a remote plasma source base according to an embodiment of the present invention is shown. Detailed Implementation

[0033] The detailed features and advantages of this utility model are described below in specific embodiments. The content is sufficient for any person skilled in the art to understand the technical content of this utility model and implement it accordingly. Furthermore, based on the specification, claims, and drawings disclosed herein, those skilled in the art can easily understand the related objectives and advantages of this utility model. Although the description of this utility model is presented in conjunction with preferred embodiments, this does not mean that the features of this utility model are limited to this embodiment. On the contrary, the purpose of describing the utility model in conjunction with the embodiments is to cover other options or modifications that may be derived from the claims of this utility model. To provide a deep understanding of this utility model, many specific details will be included in the following description. This utility model may also be implemented without using these details. In addition, to avoid confusion or obscuring the focus of this utility model, some specific details will be omitted in the description.

[0034] In the description of this utility model, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "joining" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model based on the specific circumstances.

[0035] Furthermore, the terms "upper," "lower," "left," "right," "top," "bottom," "horizontal," and "vertical" used in the following description should be understood as the orientations shown in the relevant paragraphs and accompanying drawings. These relative terms are for illustrative purposes only and do not imply that the described device must be manufactured or operated in a specific orientation; therefore, they should not be construed as limiting the scope of this invention.

[0036] It is understood that while terms such as "first," "second," and "third" may be used herein to describe various components, channels, assemblies, regions, layers, and / or parts, these components, channels, assemblies, regions, layers, and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, channels, assemblies, regions, layers, and / or parts. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0037] As indicated in this application and claims, unless the context clearly indicates otherwise, the words "a," "an," "an," and / or "the" are not specifically singular and may include plural forms. Generally speaking, the terms "comprising" and "including" only indicate the inclusion of explicitly identified steps and elements, which do not constitute an exclusive list, and the method or apparatus may also include other steps or elements.

[0038] In some embodiments, numbers describing the quantity of components and attributes are used. It should be understood that such numbers used in the description of embodiments are modified in some examples with the terms "approximately," "approximately," or "generally." Unless otherwise stated, "approximately," "approximately," or "generally" indicates that the numbers are allowed to vary by ±20%. Accordingly, in some embodiments, the numerical parameters used in the specification and claims are approximate values, which may be changed depending on the characteristics required by individual embodiments. In some embodiments, numerical parameters should take into account specified significant digits and employ a general method of digit reservation. Although the numerical ranges and parameters used to confirm their breadth of scope in some embodiments of this application are approximate values, in specific embodiments, such values ​​are set as precisely as feasible.

[0039] Furthermore, this application uses specific terms to describe embodiments of the application. For example, "an embodiment," "one embodiment," and / or "some embodiments" refer to a particular feature, structure, or characteristic related to at least one embodiment of the application. Therefore, it should be emphasized and noted that "an embodiment," "one embodiment," or "an alternative embodiment" mentioned twice or more in different locations in this specification do not necessarily refer to the same embodiment. In addition, certain features, structures, or characteristics in one or more embodiments of the application can be appropriately combined.

[0040] Figure 1 This diagram illustrates the application environment of a remote plasma source base according to an embodiment of the present invention.

[0041] The remote plasma source base (hereinafter referred to as RPS base) 101 is used to support the RPS and introduce the plasma generated by the RPS into the process chamber.

[0042] like Figure 1 As shown, the remote plasma source base 101 is located below the remote plasma generator (RPS) (not shown). The remote plasma source base 101 has a split structure. The remote plasma source base 101 includes an upper base 102 and a lower base 103. The upper base 102 has a plasma transmission pipe 104 inside. The upper end of the plasma transmission pipe 104 is connected to the remote plasma generator (RPS). The lower base 103 has a gas guiding pipe 105 and a ventilation device 110 inside.

[0043] The venting device 110 is connected to the gas guiding pipe 105 and is located below the gas guiding pipe 105. Protective gas is introduced from the bottom of the venting device 110 and then enters the gas guiding pipe 105.

[0044] The ventilation device 110 includes at least one protective gas inlet, at least one gas equalization layer, and at least one set of gas channels, wherein the at least one protective gas inlet is located at the bottom of at least one gas equalization layer, and the at least one set of gas channels is connected to at least one gas equalization layer and a gas guiding pipeline.

[0045] In one embodiment, the ventilation device 110 may be a double-layer structure. That is, the at least one set of gas channels includes a first set of gas channels and a second set of gas channels; the at least one gas equalization layer includes a first gas equalization layer and a second gas equalization layer. The at least one protective gas inlet is located at the bottom of the first gas equalization layer. One end of the first set of gas channels communicates with the top of the first gas equalization layer, and the other end communicates with the bottom of the second gas equalization layer. One end of the second set of gas channels communicates with the bottom of the gas guiding conduit, and the other end communicates with the top of the second gas equalization layer.

[0046] The gas guiding line 105 is connected to the plasma transmission line 104.

[0047] The gas guiding conduit 105 has a first end located at the top, and a second end and a third end located on the left and right sides, respectively. Plasma enters from the first end of the plasma transport conduit 104 and flows out from the second and third ends.

[0048] The first end of the gas guiding pipe 105 is connected to the lower end of the plasma transmission pipe 104.

[0049] The second end of the gas guiding pipeline 105 is connected to the first gas delivery pipeline 106.

[0050] The third end of the gas guiding pipeline 105 is connected to the second gas delivery pipeline 107.

[0051] One end of the first gas delivery pipeline 106 is connected to the second end of the remote plasma source base, and the other end is connected to the first chamber 108 in the dual process chambers.

[0052] One end of the second gas delivery pipeline 107 is connected to the third end of the remote plasma source base, and the other end is connected to the second chamber 109 in the dual process chambers.

[0053] In one embodiment, the first gas delivery line 106 has a folded structure, which delivers plasma to the first chamber 108.

[0054] In one embodiment, the second gas delivery line 107 has a folded structure, which delivers plasma to the second chamber 109.

[0055] It should be noted that the gas guiding pipeline of this utility model can be adapted to the process chamber as to whether it is a single chamber, a double chamber, or a multi-chamber chamber.

[0056] Figure 2 A cross-sectional view of a remote plasma source base according to an embodiment of the present invention is shown.

[0057] The end of the plasma transmission line 104 of the upper base 102 is horn-shaped, and the larger end of the horn-shaped line connects to the first end of the gas guide line 105 of the lower base 103.

[0058] The second end of the gas guiding pipe 105 is horn-shaped, with the smaller opening of the horn facing outward and connecting to one end of the first gas conveying pipe 106.

[0059] The third end of the gas guiding pipe 105 is horn-shaped, with the smaller opening of the horn facing outward and aligned with one end of the second gas conveying pipe 107.

[0060] The connection between the first end and the second end is a rounded corner structure 111.

[0061] The connection between the first end and the third end is a rounded corner structure 111.

[0062] One of the purposes of making the remote plasma source base of this utility model into a split structure (i.e., divided into an upper base and a lower base) is to facilitate the processing of the internal flow channel of the base into a structure with horn holes and rounded corners. In this way, after the plasma comes out of the RPS, it first passes through the horn holes and rounded corner areas, which will reduce its flow velocity and reduce the impact on the bottom surface.

[0063] The direction of plasma flow is as follows Figure 2 As indicated by the arrow. From Figure 2 As can be seen, after the plasma flows from the RPS into the plasma transmission line 104, it flows along the direction of the horn hole and the rounded corner into the gas guide line 105 of the lower base 103, and then flows to the second and third ends. After the plasma enters the remote plasma source base, the horn hole and rounded corner structure can increase the cross-sectional area of ​​the flow channel, reduce the plasma velocity, and reduce the impact corrosion of the plasma on the base surface.

[0064] In contrast. Figure 3 A cross-sectional view of a prior art distal plasma source base is shown. (See diagram.) Figure 3As shown, the remote plasma source base is not a separate unit, and the plasma flow direction is a simple vertical-to-horizontal transition. This traditional structure results in the RPS base being bombarded by plasma for a long time, leading to corrosion of the base surface.

[0065] Figure 4 A cross-sectional view of a remote plasma source base according to an embodiment of the present invention is shown. A ventilation device 110 is located below and communicates with the gas guide line 105.

[0066] The ventilation device 110 can be a single-layer structure, a double-layer structure, or a multi-layer structure.

[0067] In a preferred embodiment, the ventilation device 110 has a double-layer structure. The ventilation device 110 has a first gas equalization layer 401, a second gas equalization layer 402, a first set of gas channels 404, and a second set of gas channels 405.

[0068] The bottom of the first uniform gas layer 401 has a protective gas inlet 403.

[0069] A first set of gas channels 404 is provided between the first gas equalization layer 401 and the second gas equalization layer 402. One end of the first set of gas channels 404 is connected to the top of the first gas equalization layer 401, and the other end is connected to the bottom of the second gas equalization layer 402.

[0070] A second set of gas channels 405 is provided between the second gas uniform layer 402 and the gas guiding pipe 105. One end of the second set of gas channels 405 is connected to the bottom of the gas guiding pipe 105, and the other end is connected to the top of the second gas uniform layer 402.

[0071] In one embodiment, each gas channel of the first group of gas channels 404 is cylindrical.

[0072] In one embodiment, each gas channel of the second group of gas channels 405 is conical.

[0073] In one embodiment, the number of gas channels in the second group of gas channels 405 is greater than the number of gas channels in the first group of gas channels 404.

[0074] The direction of the protective gas flow is as follows Figure 4 As shown, the protective gas enters the first gas equalization layer 401 through the protective gas inlet 403. After being equalized by the first gas equalization layer 401, the protective gas enters the second gas equalization layer 402 through the first set of gas channels 404 for further equalization, and finally enters the gas guide pipe 105 through the second set of gas channels 405.

[0075] In one embodiment, the protective gas may be nitrogen. However, the present invention is not limited to this; any gas that can protect the RPS base from plasma bombardment should be considered as the protective gas described in the present invention.

[0076] In one embodiment, the top view of the first uniform air layer 401 is rectangular.

[0077] In one embodiment, the top view of the second uniform air layer 402 is rectangular.

[0078] In one embodiment, the cavity space of the second gas equalization layer 402 is larger than that of the first gas equalization layer 401, so that the protective gas can be further equalized in the second gas equalization layer 402.

[0079] As plasma enters the first end of the gas guiding pipe 105 from the upper base 102 and exits from the second and third ends, a protective gas, such as N2, is introduced into the lower base 103 from the protective gas inlet 403 to reduce the impact of the plasma on the base surface and thus protect the surface.

[0080] The ventilation device 110 provided by this utility model is used to introduce protective gas and to homogenize the protective gas. The ventilation device 110 can be designed to perform homogenization multiple times, for example, it can perform homogenization twice (first homogenization layer and second homogenization layer), so that the gas distribution of the protective gas entering the base is more uniform, and the impact on the plasma flow field is smaller. Furthermore, the flow field and flow rate of the protective gas can be adjusted by changing the structure and arrangement of the ventilation.

[0081] In one embodiment, the structure of the ventilation device, such as the length, width, and height of the first gas uniform layer and the second gas uniform layer, the number and shape of the first group of gas channels, and the number and shape of the second group of gas channels, can be adaptively adjusted to achieve the desired flow field and flow rate of the protective gas.

[0082] This invention also provides a semiconductor process apparatus. The semiconductor process apparatus includes a remote plasma generator (RPS), a remote plasma source base as described above, a first gas delivery line, a second gas delivery line, and a dual process chamber.

[0083] Remote plasma generators (RPS) are used to generate plasma.

[0084] The remote plasma source base supports the remote plasma generation equipment.

[0085] One end of the first gas delivery pipeline is connected to the second end of the remote plasma source base, and the other end is connected to one of the chambers in the dual process chambers.

[0086] One end of the second gas delivery pipeline is connected to the third end of the remote plasma source base, and the other end is connected to another chamber in the dual process chambers.

[0087] The semiconductor process equipment also includes a protective gas generating device for generating protective gas, which is then transmitted to a protective gas inlet at the bottom of a remote plasma source base.

[0088] In one embodiment, the protective gas generating device is a separate device located outside the dual process chambers.

[0089] The remote plasma source base and semiconductor process equipment provided by this utility model have the following beneficial technical effects:

[0090] Firstly, this utility model designs the remote plasma source base as a split structure, which can make the internal flow channel of the base into a horn hole structure and round the corners. The horn hole structure can increase the cross-sectional area of ​​the flow channel, reduce the plasma flow velocity, and reduce the impact corrosion of the plasma on the surface of the base.

[0091] Secondly, this utility model adds a vent hole to the bottom surface of the remote plasma source base. When plasma flows through, protective gas is introduced from the bottom surface of the base. The introduction of protective gas reduces the impact of plasma on the bottom surface, thereby protecting the parts.

[0092] Thirdly, the air passage on the bottom surface of the remote plasma source base of this utility model can be uniformly circulated multiple times to ensure that the protective gas is more evenly distributed and has less impact on the plasma flow field. Furthermore, the flow field and flow rate of the protective gas can be adjusted by changing the structure and arrangement of the air passage.

[0093] The terminology and expressions used above are for descriptive purposes only, and this utility model should not be limited to these terms and expressions. The use of these terms and expressions does not mean excluding any illustrative and descriptive equivalent features (or parts thereof), and it should be recognized that various possible modifications should also be included within the scope of the claims. Other modifications, variations, and substitutions may also exist. Accordingly, the claims should be considered to cover all such equivalents.

[0094] Similarly, it should be noted that, in order to simplify the description of the present application and thus aid in the understanding of one or more embodiments of the utility model, the foregoing description of the embodiments of the present application sometimes combines multiple features into a single embodiment, drawing, or description thereof. However, this disclosure method does not imply that the subject matter of the present application requires more features than those mentioned in the claims.

[0095] Similarly, it should be noted that although the present invention has been described with reference to the specific embodiments described above, those skilled in the art should recognize that the above embodiments are only used to illustrate the present invention, and various equivalent changes or substitutions can be made without departing from the spirit of the present invention. Therefore, any changes or modifications to the above embodiments within the scope of the essential spirit of the present invention will fall within the scope of the claims of this application.

Claims

1. A remote plasma source base, characterized in that, include: Upper base and lower base; The lower base has a gas guiding pipe and a ventilation device located below the gas guiding pipe. Plasma enters the gas guiding pipe from the upper base. The ventilation device includes at least one uniform air layer, at least one protective gas inlet, and at least one set of gas channels; The at least one protective gas inlet is located at the bottom of the at least one gas uniform layer, and the at least one set of gas channels are connected to the at least one gas uniform layer and the gas guiding pipeline.

2. The remote plasma source base as described in claim 1, characterized in that, The at least one gas equalization layer includes a first gas equalization layer and a second gas equalization layer; the at least one set of gas channels includes a first set of gas channels and a second set of gas channels; the at least one protective gas inlet is located at the bottom of the first gas equalization layer; one end of the first set of gas channels is connected to the top of the first gas equalization layer, and the other end is connected to the bottom of the second gas equalization layer; one end of the second set of gas channels is connected to the bottom of the gas guiding pipe, and the other end is connected to the top of the second gas equalization layer.

3. The remote plasma source base as described in claim 2, characterized in that, The cavity space within the second uniform gas layer is larger than the cavity space within the first uniform gas layer.

4. The remote plasma source base as described in claim 2, characterized in that, The number of gas channels in the second group of gas channels is greater than the number of gas channels in the first group of gas channels.

5. The remote plasma source base as described in claim 1, characterized in that, The upper base has a plasma transmission pipeline inside; the gas guiding pipeline has a first end located at the top, and a second end and a third end located on the left and right sides respectively; the first end is connected to the lower end of the plasma transmission pipeline; the plasma enters the first end from the plasma transmission pipeline and exits from the second end and the third end.

6. The remote plasma source base as described in claim 5, characterized in that, The end of the plasma transmission pipeline is horn-shaped, with the larger opening of the horn-shaped end aligned with the first end.

7. The remote plasma source base as described in claim 5, characterized in that, The second end is horn-shaped, with the smaller opening facing outwards; the third end is also horn-shaped, with the smaller opening facing outwards.

8. The remote plasma source base as described in claim 5, characterized in that, The connection between the first end and the second end is a rounded corner structure, and the connection between the first end and the third end is a rounded corner structure.

9. The remote plasma source base as described in claim 5, characterized in that, As the plasma enters the first end from the upper base and exits from the second and third ends, the protective gas is introduced into the lower base from the at least one protective gas inlet.

10. A semiconductor process apparatus, characterized in that, include: Remote plasma generation equipment; The remote plasma source base as described in any one of claims 1 to 9 supports the remote plasma generating device; Dual process chambers; A first gas delivery pipeline, one end of which is connected to the second end of the distal plasma source base, and the other end of which is connected to the dual process chamber; and The second gas delivery pipeline is connected at one end to the third end of the remote plasma source base and at the other end to the dual process chamber.

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