Gas distributor

By designing a gas distributor with a multi-stage flow distribution structure, the problem of poor spray uniformity of the spray plate was solved, and the uniformity of the deposition thickness on the substrate surface and the reaction speed were improved. This is suitable for the industrial-scale production of spatial atomic layer deposition equipment.

CN224258776UActive Publication Date: 2026-05-19浙江晟霖益嘉科技有限公司
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
浙江晟霖益嘉科技有限公司
Filing Date
2025-04-27
Publication Date
2026-05-19

AI Technical Summary

Technical Problem

Existing atomic layer deposition equipment suffers from poor spray uniformity of the spray plate, resulting in low coating quality over large areas and an inability to achieve uniform coating over a long period of time.

Method used

Design a gas distributor with a multi-stage flow distribution structure, including a main inlet path, sub-paths, flow equalization path, and spray path. The gas is fully diffused and mixed in each path and ejected through the spray holes with a uniform flow rate and pressure. It is suitable for space-type atomic layer deposition equipment.

Benefits of technology

It achieves improved uniformity of deposition thickness on substrate surface, enhanced atomic layer deposition reaction rate and product uniformity, and reduced deposition cycle time per layer, making it suitable for large-scale industrial production.

✦ Generated by Eureka AI based on patent content.

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Abstract

The utility model discloses a gas distributor which comprises a spraying plate, a plurality of gas distribution channels are arranged on the gas distributor, each gas distribution channel comprises a plurality of gas inlet main paths, a plurality of sub-paths, a plurality of flow equalizing paths and a plurality of spraying paths, a plurality of first connecting holes are formed in the gas inlet main paths and communicate with the sub-paths, and a plurality of second connecting holes are formed in the spraying paths and communicate with the sub-paths; openings of the first connecting holes are formed in the side wall of the air inlet main path, the first connecting holes are formed in the axis direction of the air inlet main path at intervals, the sub path is provided with a plurality of second connecting holes communicated with the flow equalizing path, openings of the second connecting holes are formed in the side wall of the sub path, and the second connecting holes are formed in the axis direction of the sub path at intervals. The flow equalizing path is provided with a plurality of third connecting holes communicated with the spraying path, openings of the third connecting holes are formed in the side wall of the flow equalizing path, the third connecting holes are formed in the axis direction of the flow equalizing path at intervals, and the spraying plate is provided with a plurality of spraying holes in the length direction of the spraying path and communicated with the spraying path.
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Description

Technical Field

[0001] This application relates to the field of semiconductors and related semiconductor equipment, and more specifically, to a gas distributor. Background Technology

[0002] Atomic layer deposition (ALD) is a method that deposits materials onto a substrate surface layer by layer in the form of single-atom films.

[0003] Existing atomic layer deposition equipment mainly achieves substrate surface coating by spraying corresponding reactive gases through a spray plate. However, the spray uniformity of existing spray plates is poor, making it impossible to achieve large-area uniform coating over a long period of time, resulting in low coating quality.

[0004] Therefore, the development of a novel gas distributor structure to achieve large-area uniform coating is a technical problem that urgently needs to be solved in this field. Summary of the Invention

[0005] This application aims to address one of the technical problems in related technologies to a certain extent. To this end, this application provides a gas distributor.

[0006] To achieve the above objectives, as a first aspect of this application, a gas distributor is disclosed. The gas distributor includes a spray plate and is provided with multiple sets of gas distribution passages. Each gas distribution passage includes multiple main inlet passages, multiple sub-passages, multiple flow equalization passages, and multiple spray passages. The main inlet passages are used to introduce reaction gases. The main inlet passages are provided with multiple first connecting holes communicating with the sub-passages. The openings of the first connecting holes are formed on the sidewall of the main inlet passages, and the first connecting holes are spaced apart along the axial direction of the main inlet passages. The sub-passages are provided with multiple second connecting holes. The flow equalization path is connected to the flow equalization path. The opening of the second connecting hole is formed on the side wall of the sub-path, and multiple second connecting holes are spaced apart along the axial direction of the sub-path. The flow equalization path is provided with multiple third connecting holes connected to the spray path. The opening of the third connecting hole is formed on the side wall of the flow equalization path, and the third connecting holes are spaced apart along the axial direction of the flow equalization path. The spray plate is provided with multiple spray holes along the length direction of the spray path and connected to the spray path, so that the gas passes through the main air inlet path, the sub-path, the flow equalization path, and the spray path in sequence and is then sprayed out from the spray holes.

[0007] Furthermore, multiple main intake paths are arranged side-by-side and spaced apart along a first direction, multiple sub-paths are arranged side-by-side and spaced apart along the axial direction of the main intake paths, multiple flow equalization paths are arranged side-by-side and spaced apart along the axial direction of the sub-paths, and the axial direction of the spray path is consistent with the axial direction of the flow equalization path.

[0008] Furthermore, the gas distribution passage includes two main intake channels, which are respectively located at both ends of the gas distributor, and the two ends of the sub-channel are respectively connected to the two main intake channels, so that the gas in the main intake channel can be introduced into the two ends of the sub-channel.

[0009] Furthermore, the gas distributor also includes multiple throttling elements, which are detachably disposed between the main intake passage and the sub-passage. The multiple throttling elements are spaced apart along the axial direction of the main intake passage. Each throttling element is provided with a through throttling orifice, and the two ends of the throttling orifice are respectively connected to the main intake passage and the sub-passage. The throttling element is used to transmit gas flowing out of the main intake passage into the sub-passage through the throttling orifice.

[0010] Furthermore, an air inlet is provided on the main air intake path for introducing gas. For any two throttling elements arranged along the axial direction of the main air intake path, the diameter of the throttling orifice adjacent to the air intake is smaller than the diameter of the throttling orifice farther away from the air intake.

[0011] Furthermore, the multiple gas distribution paths are respectively a first precursor distribution path, a second precursor distribution path, and a barrier gas distribution path, which are used for spraying the first precursor, the second precursor, and the barrier gas, respectively.

[0012] The first precursor distribution path has multiple spray paths, which are multiple first spray paths; the second precursor distribution path has multiple spray paths, which are multiple second spray paths; the isolation gas distribution path has multiple spray paths, which are multiple isolation gas spray paths; the spray plate has multiple spray holes, which include multiple first spray holes, multiple second spray holes, and multiple isolation gas spray holes; the first spray paths are connected to the first spray holes; the second spray paths are connected to the second spray holes; the isolation gas spray paths are connected to the isolation gas spray holes; the multiple first spray paths and the multiple second spray paths are alternately arranged in multiple rows along a first direction; at least one isolation gas spray path is arranged between any two adjacent first spray paths and second spray paths.

[0013] Furthermore, the distance between any two adjacent first spray holes is less than the distance between any two adjacent second spray holes.

[0014] Furthermore, the spray plate is also provided with exhaust holes that extend through the thickness of the spray plate. The exhaust holes are provided on both sides of any first spray hole and second spray hole, and the exhaust holes are used to discharge the gas sprayed from the adjacent spray holes.

[0015] Furthermore, the gas distributor includes multiple main intake pipes, multiple sub-pipes, multiple flow equalization pipes, and multiple ventilation sections. The main intake pipe has the main intake path, the sub-pipes have the sub-paths, the flow equalization pipes have the flow equalization path, and the ventilation section has a ventilation groove. The ventilation section is disposed on the spray plate such that the opening of the ventilation groove is closed by the spray plate to form the spray path.

[0016] Furthermore, the gas distributor includes a gas distribution plate, and multiple sets of gas distribution passages are formed within the plate body of the gas distribution plate.

[0017] The gas distributor provided in this application adopts a multi-stage flow distribution structure, which is particularly suitable for spatial atomic layer deposition equipment. Different precursors and isolation gases pass through the main inlet path, sub-path, flow equalization path and spray path in their respective distribution paths in sequence. The gas undergoes sufficient diffusion in each stage path, making the gas flow more uniform. Then it flows into the next stage path and is mixed again. Finally, after flow equalization in the spray path, it is sprayed out from each spray hole with a uniform flow rate and pressure. This makes the deposition thickness at each surface position the same when the sprayed gas is deposited on the substrate surface to be deposited. The atomic layer deposition reaction rate and products in one atomic layer deposition cycle are also more uniform. This advantage is more obvious in long-term large-area atomic layer deposition processes.

[0018] These features and advantages of this application will be disclosed in detail in the following specific embodiments and accompanying drawings. The best embodiments or means of this application will be shown in detail in conjunction with the accompanying drawings, but are not intended to limit the technical solutions of this application. In addition, each of these features, elements and components appearing in the following text and drawings is multiple and is labeled with different symbols or numbers for convenience, but all represent parts with the same or similar structure or function. Attached Figure Description

[0019] The following description, in conjunction with the accompanying drawings, further illustrates this application:

[0020] Figure 1 This is a schematic diagram of one embodiment of the gas distributor provided in this application;

[0021] Figure 2 This is a schematic diagram of one embodiment of the gas distributor provided in this application;

[0022] Figure 3 This is a schematic diagram of one embodiment of the gas distributor provided in this application;

[0023] Figure 4(a) is a schematic diagram of one embodiment of the first precursor distribution path provided in this application;

[0024] Figure 4(b) is a schematic diagram of one embodiment of the first precursor distribution path provided in this application;

[0025] Figure 4(c) is a schematic diagram of one embodiment of the first precursor distribution path provided in this application;

[0026] Figure 4(d) is a schematic diagram of one embodiment of the first precursor distribution path provided in this application;

[0027] Figure 5(a) is a schematic diagram of one embodiment of the second precursor distribution path provided in this application;

[0028] Figure 5(b) is a schematic diagram of one embodiment of the second precursor distribution path provided in this application;

[0029] Figure 5(c) is a schematic diagram of one embodiment of the second precursor distribution path provided in this application;

[0030] Figure 5(d) is a schematic diagram of one embodiment of the second precursor distribution path provided in this application;

[0031] Figure 6(a) is a schematic diagram of one embodiment of the isolation gas distribution path provided in this application;

[0032] Figure 6(b) is a schematic diagram of one embodiment of the isolation gas distribution path provided in this application;

[0033] Figure 6(c) is a schematic diagram of one embodiment of the isolation gas distribution path provided in this application;

[0034] Figure 6(d) is a schematic diagram of one embodiment of the isolation gas distribution path provided in this application;

[0035] Figure 7 This is a three-dimensional exploded schematic diagram of one embodiment of the gas distributor provided in this application;

[0036] Figure 8 This is a perspective schematic diagram of one embodiment of the gas distributor provided in this application;

[0037] Figure 9 This is a perspective view of one embodiment of the throttling device provided in this application;

[0038] Figure 10 This is a side explosion diagram of one embodiment of the gas distributor provided in this application;

[0039] Figure 11 This is a side explosion diagram of one embodiment of the gas distributor provided in this application.

[0040] Explanation of reference numerals in the attached figures

[0041] 1: Gas distributor; 1a: Main air intake; 1b: Sub-channel; 1c: Flow equalization channel; 1d: Spray channel; 1a1: Air inlet; 1a2: Throttling device; 1a3: Throttling orifice; 1c1: Third connection hole; 1d1: Spray orifice;

[0042] 15: Spray plate; 150: Exhaust vent; 151: First spray hole; 152: Second spray hole; 153: Isolation gas spray hole;

[0043] 11: First precursor distribution path; 11': First precursor air inlet; 11a: First main air intake path; 11b: First sub-path; 11c: First flow equalization path; 11d: First spray path; 110: First throttling device;

[0044] 12: Second precursor distribution path; 12': Second precursor air inlet; 12a: Second main air intake path; 12b: Second sub-path; 12c: Second flow equalization path; 12d: Second spray path; 120: Second throttling device;

[0045] 13: Isolation gas distribution path; 13': Isolation gas inlet; 13a: Isolation gas main inlet path; 13b: Isolation gas sub-path; 13c: Isolation gas flow equalization path; 13d: Isolation gas spray path; 130: Isolation gas throttling device. Detailed Implementation

[0046] Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described are intended to explain the present invention and should not be construed as limiting the invention.

[0047] The terms "an embodiment," "example," or "example" used in this specification refer to a particular feature, structure, or characteristic described in connection with the embodiment itself that may be included in at least one embodiment disclosed in this application. The phrase "in an embodiment" appearing in various places in the specification does not necessarily refer to the same embodiment. The "spaces" referred to in this application do not necessarily mean spaces of the same size.

[0048] As a first aspect of the present invention, a gas distributor is disclosed, such as Figures 1 to 3As shown, the gas distributor 1 includes a spray plate 15. The gas distributor 1 is provided with multiple sets of gas distribution passages, including multiple main intake passages 1a, multiple sub-passages 1b, multiple flow equalization passages 1c, and multiple spray passages 1d. The main intake passages 1a are used to introduce gas. Multiple first connecting holes are provided on the main intake passages 1a and communicate with the sub-passages 1b. The openings of the first connecting holes are formed on the sidewall of the main intake passages 1a, and the first connecting holes are spaced apart along the axial direction of the main intake passages 1a. Multiple second connecting holes are provided on the sub-passages 1b and communicate with the flow equalization passages 1c. The openings of the second connecting holes are... Multiple second connecting holes are formed on the side wall of sub-path 1b and are spaced apart along the axial direction of sub-path 1b. Multiple third connecting holes 1c1 are provided in the flow equalization path 1c and are connected to the spray path 1d. The opening of the third connecting hole 1c1 is formed on the side wall of the flow equalization path 1c and is spaced apart along the axial direction of the flow equalization path 1c. Multiple spray holes 1d1 are provided in the spray plate 15 along the length direction of the spray path 1d and are connected to the spray path 1d, so that the gas passes through the main air intake path 1a, sub-path 1b, flow equalization path 1c and spray path 1d in sequence and is sprayed out from the spray holes 1d1.

[0049] This application does not impose specific limitations on the application of the gas distributor, and can meet the film formation requirements of various oxides, such as alumina, tin oxide, and silicon oxide. The gas distributor provided in this application adopts a multi-stage flow distribution structure, which is particularly suitable for spatial atomic layer deposition (ALD) equipment. Different precursors and isolation gases sequentially pass through the main inlet path, sub-path, flow equalization path, and spray path in their respective distribution paths. The gas undergoes sufficient diffusion in each stage path, making the gas flow more uniform. Then, it flows into the next stage path for further thorough mixing. Finally, after flow equalization in the spray path, it is ejected from each spray hole with a uniform flow rate and pressure. This ensures that when the sprayed gas is deposited on the substrate surface, the deposition thickness is the same at each surface location. The atomic layer deposition reaction rate and products in one atomic layer deposition cycle are also more uniform. This advantage is more pronounced in long-term, large-area atomic layer deposition processes. The compact arrangement significantly reduces the deposition cycle time per layer, meeting the requirements for large-area substrate film formation in industrial-scale production.

[0050] This application does not impose special limitations on the positional arrangement of the multiple main intake paths 1a, multiple sub-paths 1b, multiple flow equalization paths 1c, and multiple spray paths 1d. In some embodiments, such as Figure 1As shown, multiple main air intake paths 1a are arranged side-by-side and spaced apart along a first direction, which is consistent with the deposition sequence direction of the gas distributor. This allows the substrate to be deposited to pass through the gas distributor in the first direction for sequential deposition. Multiple sub-paths 1b are arranged side-by-side and spaced apart along the axial direction of the main air intake paths 1a. Multiple flow equalization paths 1c are arranged side-by-side and spaced apart along the axial direction of the sub-paths 1b. The axial direction of the spray path 1d is consistent with the axial direction of the flow equalization path 1c. The multi-level branches of each gas distribution path are arranged at intervals, providing sufficient installation space for multiple gas distribution paths to be combined and installed together to form a gas distributor for spatial atomic layer deposition.

[0051] This application does not impose any special limitation on how the multiple main intake channels 1a and multiple sub-channels 1b are connected. In some embodiments, the sub-channels are relatively long. If the gas only enters from one side of the sub-channel, the gas cannot be effectively evenly distributed at the other end. Preferably, the gas distribution passage includes two main intake channels. The two main intake channels 1a are respectively located at both ends of the gas distributor, and the two ends of the sub-channel 1b are respectively connected to the two main intake channels 1a. This allows the gas from the main intake channel 1a to be introduced into both ends of the sub-channel 1b. The gas entering the sub-channel 1b from both ends shortens the diffusion and mixing path, making the mixing more thorough and the flow equalization efficiency higher. At the same time, the large flow of gas entering from both ends converges and diffuses in the middle of the sub-channel 1b, reducing the weakness of the gas flow in the middle of the sub-channel 1b and making the gas flow out of the sub-channel more evenly.

[0052] This application does not specifically limit the spacing dimensions of the multiple main intake paths 1a, multiple sub-paths 1b, multiple flow equalization paths 1c, and multiple spray paths 1d. To achieve better flow equalization, preferably, the spacing between adjacent sub-paths is between 300mm and 450mm, and the spacing between the flow equalization paths along the length of the sub-paths is between 90mm and 200mm, or between 80mm and 160mm. The length of each flow equalization path along the width of the sub-path is between 120mm and 240mm. This application also does not specifically limit the number of third connecting holes; the number of third connecting holes on each flow equalization path is between 1 and 10. Preferably, each flow equalization path has 3 third connecting holes, located at both ends and the middle of the flow equalization path. Figure 10 As shown.

[0053] The first, second, and third connecting holes of this application are respectively provided on the side wall of the corresponding passage. The connection holes on the side wall facilitate the processing of the gas distributor, and at the same time, the position of the connection holes can be set more flexibly.

[0054] This application does not impose special limitations on how the main intake path and sub-paths are connected. Gas distribution paths often introduce gases of different properties; gases with larger molecular weights are more difficult to diffuse. When changing the introduced gas, it is often necessary to adjust the dimensions of the first and second connecting holes of the main intake path and sub-paths to match different gases. In some embodiments, such as... Figure 1 and Figure 9 As shown, the gas distributor also includes multiple throttling elements 1a2, which are detachably disposed between the main intake passage 1a and the sub-passage 1b. The multiple throttling elements 1a2 are spaced apart along the axial direction of the main intake passage. Each throttling element 1a2 has a through-hole throttling orifice 1a3, with both ends of the orifice 1a3 connected to the main intake passage 1a and the sub-passage 1b, respectively. The throttling element 1a2 is used to transmit gas flowing out of the main intake passage 1a through the throttling orifice into the sub-passage 1b. This avoids the need to replace the entire gas distribution path when changing gases; only the throttling element needs to be replaced to adjust the connection orifice size to match different gases.

[0055] like Figure 1 As shown, an air inlet 1a1 is also provided on the main intake path 1a for introducing gas. Generally, the throttling device closer to the air inlet 1a1 can introduce a larger gas flow rate, while the throttling device farther from the air inlet 1a1 can introduce a smaller gas flow rate. This makes the gas flow rate at multiple locations uneven during the process of the main intake path 1a introducing gas into the sub-path 1b, resulting in no uniform airflow effect. Preferably, for any two throttling devices 1a2 arranged along the length of the main intake path 1a, the orifice diameter of the throttling orifice relative to the adjacent air inlet 1a1 is smaller than the orifice diameter of the throttling orifice relative to the farthest air inlet 1a1. This allows the airflow flowing in from the air inlet 1a1 to be introduced into the sub-path 1b with a uniform flow rate through multiple throttling devices, improving the uniformity of airflow at multiple locations.

[0056] This application does not impose any special limitations on how the multiple gas distribution channels are arranged. In some embodiments, as shown in Figures 4(a), 5(a), and 6(a)... Figure 7 and Figure 8 As shown, the multiple gas distribution paths are a first precursor distribution path 11, a second precursor distribution path 12, and a barrier gas distribution path 13, wherein the structures of the first precursor distribution path 11, the second precursor distribution path 12, and the barrier gas distribution path 13 are consistent with the structures of the gas distribution paths described above. Based on the above distribution path structures, the structures between the multiple first precursor spray paths, second precursor spray paths, and barrier gas spray paths are as follows: Figure 7 and Figure 8 As shown, they are used to spray the first precursor, the second precursor, and the isolation gas, respectively.

[0057] The first precursor distribution path 11 has multiple spray paths, which are multiple first spray paths 11d; the second precursor distribution path 12 has multiple spray paths, which are multiple second spray paths 12d; and the isolation gas distribution path 13 has multiple spray paths, which are multiple isolation gas spray paths 13d. The spray plate 15 has multiple spray holes, which include multiple first spray holes 151, multiple second spray holes 152, and multiple isolation gas spray holes 153. The first spray paths 11d are connected to the first spray holes 151, the second spray paths 12d are connected to the second spray holes 152, and the isolation gas spray paths 13d are connected to the isolation gas spray holes 153.

[0058] Multiple first spray paths 11d and multiple second spray paths 12d are alternately arranged along the first direction to form multiple columns, and any adjacent first spray paths 11d

[0059] At least one isolation air spray path 13d is provided between the second spray path 12d and the second spray path 12d, thereby forming a corresponding spray hole arrangement structure on the spray plate, i.e. Figure 2 and Figure 3 As shown, along the length of the gas distributor, the arrangement and sequence of the spray holes on the spray plate are as follows: isolation gas spray hole 153, exhaust hole 150, first spray hole 151, exhaust hole 150, isolation gas spray hole 153, exhaust hole 150, second spray hole 152, and exhaust hole 150. The above four rows of spray holes and four rows of exhaust holes are arranged alternately to form a reaction cycle. The gas distributor has multiple sets of the above-mentioned cycle arrangement structure.

[0060] Figures 4 to 6 are schematic diagrams of the structure of each gas distribution path, namely the first precursor distribution path 11, the second precursor distribution path 12, and the isolation gas distribution path 13.

[0061] As a specific implementation, as shown in Figures 4(a), 4(b), 4(c) and 4(d), the first precursor distribution path 11 includes two first intake main paths 11a, which are symmetrically arranged at both ends of four first sub-paths 11b. A first throttling device 110 is installed between the first intake main paths and the first sub-paths for connection. The spacing between the four first sub-paths 11b is consistent, ranging from 300mm to 450mm. Multiple first flow equalization paths 11c are provided at intervals along the length of each first sub-path 11b, with an interval ranging from 80mm to 160mm, to divert the gas from the first sub-path into the multiple first flow equalization paths. Each first flow equalization path has the same length, between 120mm and 240mm. Preferably, six first flow equalization paths 11c are provided along the width of the four first sub-paths 11b. The positions of these six first flow equalization paths 11c form a row along the width of the first sub-paths 11b. Each first flow equalization path 11c is designed with three third connection holes, that is, the six first flow equalization paths 11c in the same row have one third connection hole. Eight third connection holes, totaling 18 third connection holes, allow gas to be guided to one of the corresponding first spray paths 11d. The length of the first spray path 11d covers the width of the substrate to be deposited. Multiple first spray holes are formed on the spray plate corresponding to the positions of the first spray paths, meaning that multiple first spray holes are connected to each first spray path. The spacing between adjacent first spray holes is the same, ranging from 3mm to 9mm, so that the first precursor gas passes through the first main air inlet 11a, the first sub-path 11b, the first flow equalization path 11c, and the first spray path 11d in sequence before being sprayed out from the first spray holes, achieving uniform distribution in the width direction of the substrate. The first main air inlet 11a also has a first precursor air inlet 11', and a first throttling element 110 is detachably provided between the first main air inlet 11a and the first sub-path 11b.

[0062] The structure of the second precursor distribution path is consistent with that of the first precursor distribution path, as shown in Figures 5(a), 5(b), 5(c), and 5(d). Specifically, it includes a second precursor air inlet 12', a second main intake path 12a, a second sub-path 12b, a second flow equalization path 12c, a second spray path 12d, and a second throttling element 120. The number and relative positions of the second main intake path 12a, the second sub-path 12b, the second flow equalization path 12c, and the second spray path 12d are the same as those of the first precursor distribution path. The structure of the isolator distribution path and the second precursor distribution path is similar to that of the first precursor distribution path, as shown in Figures 6(a), 6(b), 6(c) and 6(d). Specifically, it includes an isolating gas inlet 13', an isolating gas main inlet path 13a, an isolating gas sub-path 13b, an isolating gas flow equalization path 13c, an isolating gas spray path 13d, and an isolating gas throttling device 130. The spacing between the isolating gas flow equalization paths is in the range of 90mm to 200mm.

[0063] In one specific implementation, a spatial atomic layer deposition apparatus physically separates the reaction zones, continuously exposing the first and second precursors during substrate movement, and physically isolating the first and second precursors using a separating gas, N2. When a gas distributor is used in a spatial atomic layer deposition apparatus, such as... Figure 2 , Figure 3 , Figure 7 and Figure 8 As shown, the arrangement in the substrate moving direction is as follows: isolation gas spray path 13d, first spray path 11d, isolation gas spray path 13d, and second spray path 12d. The above arrangement forms a set of reaction cycles, and the gas distributor may include multiple sets of reaction cycles arranged as described above.

[0064] like Figure 2 , Figure 3 , Figure 7 and Figure 8 As shown, the spray plate 15 is also provided with an exhaust hole 150 that extends through the thickness direction of the spray plate 15. An exhaust hole 150 is provided on both sides of any first spray hole 151 and second spray hole 152. The exhaust hole 150 is used to exhaust the gas sprayed from the adjacent spray hole.

[0065] In some embodiments, an exhaust port 150 is provided between any first spray hole and an adjacent isolation gas spray hole to discharge the gas sprayed from the first spray hole and the adjacent isolation gas spray hole through the corresponding exhaust port. Similarly, an exhaust port 150 is provided between any second spray hole and an adjacent isolation gas spray hole to discharge the gas sprayed from the second spray hole and the adjacent isolation gas spray hole through the corresponding exhaust port.

[0066] As one specific implementation method, such as Figure 2 , Figure 3, Figure 7 and Figure 8 As shown, the arrangement along the substrate movement direction is as follows: isolation gas spray hole 153, exhaust hole 150, first spray hole 151, exhaust hole 150, isolation gas spray hole 153, exhaust hole 150, second spray hole 152, and exhaust hole 150. These four rows of spray holes and four rows of exhaust holes are arranged alternately to form a reaction cycle, resulting in a total of eight gas paths. The width of each of these eight gas paths ranges from 90mm to 200mm. When the substrate moves through these eight gas paths, one cycle of atomic layer reaction is completed. This process is repeated to deposit layers one by one until the desired process thickness is achieved. To achieve large-area film formation on the substrate, the entire reactive gas distributor consists of 10 to 30 sets of reaction cycles arranged along the substrate movement direction. The substrate moves or oscillates directly below the gas distributor. Each reaction cycle typically takes 1 to 2 seconds, resulting in a film formation rate more than 60 times higher than that of time-based ALD processes.

[0067] In some embodiments, Figure 10 and Figure 11 The image shows a side view of the gas distributor in an explosion.

[0068] In some embodiments, the first precursor is tetramethyltin(II)amino, the second precursor is an oxygen source (water), and the isolating gas is nitrogen. The molecular weight of the first precursor is greater than that of the second precursor, meaning that the first precursor gas molecules are heavier and have a shorter lateral diffusion length after spraying. Preferably, the distance between any two adjacent first spray holes is smaller than the distance between any two adjacent second spray holes, allowing the first precursor to be sprayed more densely onto the substrate surface by the first spray holes. This compensates for the disadvantage of a smaller lateral diffusion distance caused by the larger gas molecular weight, achieving consistent spray flow rate and diffusion distance between the first and second precursor gases, resulting in uniform deposition. Furthermore, the length of the isolating gas spray path is greater than the length of the first and second spray paths, respectively, to prevent the two precursors from mixing at their ends, thus maximizing the isolating effect.

[0069] This application does not impose any special limitation on the specific form of the gas distributor, as long as it meets the gas distribution path form described in this application. For example, it can be a gas distribution path composed of a physical pipe, or a gas distribution path formed by opening a physical gas distribution plate.

[0070] In some embodiments, the gas distributor includes multiple main intake pipes, multiple sub-pipes, multiple flow equalization pipes, and multiple ventilation sections. The main intake pipes have main intake paths, the sub-pipes have sub-paths, the flow equalization pipes have flow equalization paths, and the ventilation sections have ventilation slots. The ventilation sections are disposed on the spray plate such that the opening of the ventilation slots is closed by the spray plate to form a spray path.

[0071] In other embodiments, the gas distributor includes a gas distribution plate, and multiple gas distribution passages are formed in the plate body, that is, gas passages are usually opened in the gas distribution plate in a conventional spray module.

[0072] Table 1 below shows the film thickness and refractive index data of the substrate deposited by the gas distributor of this application in spatial atomic layer deposition. It can be seen that the uniformity of the substrate film after deposition using the gas distributor of this application is within 5%, and the film thickness is uniform at multiple locations.

[0073] Table 1

[0074]

[0075] These are merely specific embodiments of the present invention, but the scope of protection of the present invention is not limited thereto. Those skilled in the art should understand that the present invention includes, but is not limited to, the content described in the accompanying drawings and the specific embodiments above. Any modifications that do not depart from the functional and structural principles of the present invention will be included within the scope of the claims.

Claims

1. A gas distributor, characterized in that, The gas distributor (1) includes a spray plate (15). The gas distributor is provided with multiple sets of gas distribution passages, each including multiple main inlet passages (1a), multiple sub-passes (1b), multiple flow equalization paths (1c), and multiple spray paths (1d). The main inlet passage (1a) is used to introduce the reaction gas. The main inlet passage (1a) is provided with multiple first connecting holes communicating with the sub-passes (1b). The openings of the first connecting holes are formed on the sidewall of the main inlet passage (1a), and the first connecting holes are spaced apart along the axial direction of the main inlet passage (1a). The sub-passes (1b) are provided with multiple second connecting holes communicating with the flow equalization path (1c). The openings of the second connecting holes are formed on the sidewall of the main inlet passage (1a). On the side wall of the sub-path (1b), a plurality of second connecting holes are spaced apart along the axial direction of the sub-path (1b). The flow equalization path (1c) is provided with a plurality of third connecting holes (1c1) communicating with the spray path (1d). The opening of the third connecting hole (1c1) is formed on the side wall of the flow equalization path (1c), and the third connecting holes (1c1) are spaced apart along the axial direction of the flow equalization path (1c). The spray plate is provided with a plurality of spray holes (1d1) communicating with the spray path along the length direction of the spray path (1d), so that the gas passes through the main air intake path (1a), the sub-path (1b), the flow equalization path (1c), and the spray path (1d) in sequence and is then sprayed out from the spray holes (1d1).

2. The gas distributor according to claim 1, characterized in that, Multiple main intake paths (1a) are arranged side-by-side and spaced apart along a first direction, multiple sub-paths (1b) are arranged side-by-side and spaced apart along the axial direction of the main intake paths (1a), multiple flow equalization paths (1c) are arranged side-by-side and spaced apart along the axial direction of the sub-paths (1b), and the axial direction of the spray path (1d) is consistent with the axial direction of the flow equalization path (1c).

3. The gas distributor according to claim 2, characterized in that, The gas distribution passage includes two main intake channels (1a), which are respectively located at both ends of the gas distributor. The two ends of the sub-channel (1b) are respectively connected to the two main intake channels (1a), so that the gas in the main intake channel (1a) can be introduced into the two ends of the sub-channel (1b).

4. The gas distributor according to claim 2, characterized in that, The gas distributor also includes a plurality of throttling elements (1a2), which are detachably disposed between the main intake passage (1a) and the sub-passage (1b). The plurality of throttling elements (1a2) are spaced apart along the axial direction of the main intake passage. The throttling device (1a2) is provided with a through throttling orifice. The two ends of the throttling orifice are respectively connected to the main intake passage (1a) and the sub-passage (1b). The throttling device (1a2) is used to transmit the gas flowing out of the main intake passage (1a) into the sub-passage (1b) through the throttling orifice.

5. The gas distributor according to claim 4, characterized in that, An air inlet is also provided on the main air intake (1a) for introducing gas. Any two throttling elements (1a2) arranged along the axial direction of the main air intake (1a) have a smaller diameter of the throttling orifice relative to the air inlet than the diameter of the throttling orifice relative to the air inlet.

6. The gas distributor according to any one of claims 1 to 5, characterized in that, The multiple gas distribution channels are a first precursor distribution channel, a second precursor distribution channel, and a barrier gas distribution channel, which are used to spray the first precursor, the second precursor, and the barrier gas, respectively. The first precursor distribution path has multiple spray paths, which are multiple first spray paths; the second precursor distribution path has multiple spray paths, which are multiple second spray paths; the isolation gas distribution path has multiple spray paths, which are multiple isolation gas spray paths; the spray plate has multiple spray holes, including multiple first spray holes, multiple second spray holes, and multiple isolation gas spray holes; the first spray paths are connected to the first spray holes; the second spray paths are connected to the second spray holes; and the isolation gas spray paths are connected to the isolation gas spray holes. Multiple first spray paths and multiple second spray paths are alternately arranged along a first direction to form multiple columns, and at least one of the isolation air spray paths is arranged between any adjacent first spray paths and second spray paths.

7. The gas distributor according to claim 6, characterized in that, The distance between any two adjacent first spray holes is less than the distance between any two adjacent second spray holes.

8. The gas distributor according to claim 6, characterized in that, The spray plate is also provided with exhaust holes that extend through the thickness of the spray plate. The exhaust holes are provided on both sides of any first spray hole and second spray hole. The exhaust holes are used to discharge the gas sprayed from the adjacent spray holes.

9. The gas distributor according to any one of claims 1 to 5, characterized in that, The gas distributor includes multiple main intake pipes, multiple sub-pipes, multiple flow equalization pipes, and multiple ventilation sections. The main intake pipe has the main intake path, the sub-pipes have the sub-paths, the flow equalization pipes have the flow equalization path, and the ventilation section has a ventilation groove. The ventilation section is disposed on the spray plate such that the opening of the ventilation groove is closed by the spray plate to form the spray path.

10. The gas distributor according to any one of claims 1 to 5, characterized in that, The gas distributor includes a gas distribution plate, and the multiple sets of gas distribution passages are formed within the plate.