Temperature field control device

Abstract

A temperature field control device comprises an annular base and a plurality of heat radiation units arranged on the base in an annular array mode. Each heat radiation unit comprises a heating structure, a reflection structure corresponding to the heating structure, and a driving structure connected with the reflection structure and used for driving the reflection structure to change the posture or position of the reflection structure relative to the heating structure. The posture or the position of the reflection structure is adjusted through the driving structure, so that after heat radiation of the heating structure is reflected by the reflection surface of the reflection structure, the radiation area on the surface of the wafer can move in the radial direction, and each heat radiation unit can independently adjust the radiation area of the heat radiation. By selectively adjusting the attitude or position of one or more reflection structures, the thermal radiation energy distribution applied to different radial positions on the surface of the wafer can be actively changed, the regulation and control capability on the overall temperature field distribution of the wafer is enhanced, and more complex temperature field control requirements can be met.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor manufacturing, and in particular to a temperature field control device. Background Technology

[0002] With the continuous development of semiconductor technology, the shrinking of integrated circuit feature sizes has become a major trend in the industry. To maintain the effectiveness of Moore's Law and further improve device performance, the industry is actively exploring and applying new materials and processes. Among these, strained silicon technology, through the selective epitaxial growth of embedded materials in the source and drain regions of transistors, has become a key technology for improving carrier mobility, device switching speed, and driving capability.

[0003] The realization of strained silicon technology relies on a high-quality, highly uniform epitaxial growth process. In terms of epitaxial growth processes and their control technologies, precise control of the temperature field on the wafer surface is crucial to ensuring the uniformity of epitaxial layer thickness, composition, and stress, which directly affects the consistency of the electrical performance and yield of the final semiconductor device.

[0004] Currently, the industry generally adopts a temperature field control scheme that involves setting a heating module at the top of the reaction chamber, but this scheme has limitations. Utility Model Content

[0005] The problem solved by this utility model embodiment is to provide a temperature field control device that enhances the ability to regulate the overall temperature field distribution of the wafer and can meet more complex temperature field control requirements.

[0006] To address the aforementioned problems, this utility model provides a temperature field control device for controlling the temperature of a wafer. The temperature field control device includes: a base, which is ring-shaped; and multiple thermal radiation units arranged in a ring array on the base. Each thermal radiation unit includes: a heating structure for providing thermal radiation; a reflective structure corresponding to the heating structure, the reflective structure having a reflective surface facing the heating structure; and a driving structure connected to the reflective structure, the driving structure corresponding to the reflective structure and used to drive the reflective structure to change the orientation or position of the reflective structure relative to the heating structure, causing the thermal radiation irradiation area of ​​the heating structure reflected by the reflective surface to move radially on the wafer surface.

[0007] Optionally, the reflective structure is disposed at the end of the driving structure near the heating structure, and the driving structure and the reflective structure are connected by a swinging connection, wherein the driving structure is used to drive the reflective structure to swing in a vertical plane.

[0008] Optionally, the reflective structure and the heating structure are arranged alternately along the axial direction of the base.

[0009] Optionally, the reflecting surface of the reflecting structure is a concave curved surface.

[0010] Optionally, both the reflective structure and the driving structure are disposed on the side of the heating structure away from the base.

[0011] Optionally, the temperature field control device further includes a cooling structure disposed on the base, wherein the driving structure of each of the thermal radiation units is in contact with the cooling structure.

[0012] Optionally, the cooling structure is annular, and each of the driving structures is disposed on the inner sidewall of the cooling structure.

[0013] Optionally, the cooling structure is a water-cooled plate, and the water-cooled plate has coolant channels inside.

[0014] Optionally, the temperature field control device includes: a first cover plate located on the side of each of the reflective structures facing away from the base, and the projection surface of the first cover plate covers the area formed by each of the reflective structures.

[0015] Optionally, the first cover plate is annular, and the center of the first cover plate corresponds to the center of the base.

[0016] Optionally, the temperature field control device includes: a ring-shaped cooling structure disposed on the base, wherein the driving structure of each thermal radiation unit and the first cover plate are in contact with the inner wall of the cooling structure, and the first cover plate is located on top of the driving structure.

[0017] Optionally, the temperature field control device includes a second cover plate located on the surface of the drive structure facing the center of the base.

[0018] Optionally, the heating structure includes: a base, disposed on the pedestal; and a bulb, fixedly connected to the base, wherein the bulb is located on the side wall of the base near the center of the pedestal.

[0019] Optionally, the drive structure includes a motor.

[0020] Compared with the prior art, the technical solution of this utility model embodiment has the following advantages:

[0021] The temperature field control device provided in this embodiment includes an annular base and multiple thermal radiation units arranged in a ring array on the base. Each thermal radiation unit includes a heating structure, a corresponding reflective structure, and a driving structure connected to the reflective structure and used to drive the reflective structure to change its attitude or position relative to the heating structure. By adjusting the attitude or position of the reflective structure through the driving structure, the thermal radiation from the heating structure is reflected by the reflective surface of the reflective structure, allowing the irradiation area on the wafer surface to move radially. This enables each thermal radiation unit to independently adjust its irradiation area. Since the temperature field control device includes multiple adjustable thermal radiation units, by selectively adjusting the attitude or position of one or more reflective structures, the thermal radiation energy distribution applied to different radial positions on the wafer surface can be actively changed, rather than being limited to a fixed heating mode. This enhances the ability to control the overall temperature field distribution of the wafer and can meet more complex temperature field control requirements. Attached Figure Description

[0022] Figure 1 This is a schematic diagram of the film thickness in various regions of the wafer radially under existing temperature field control devices;

[0023] Figure 2 This is a partial structural schematic diagram of the cross-section of the temperature field control device according to an embodiment of the present utility model;

[0024] Figure 3 This is a top view of the temperature field control device of this utility model with a half-section of the first cover plate.

[0025] Figure 4 This is a schematic diagram of the inner ring thermal radiation unit group in the temperature field control device of this utility model when it is working;

[0026] Figure 5 This is a schematic diagram of the outer ring thermal radiation unit group in the temperature field control device of this utility model when it is working;

[0027] Figure 6 This illustration shows the variable angle range between the reflective structure and the horizontal plane in the inner and outer thermal radiation unit groups of the temperature field control device according to an embodiment of the present invention, as well as the range of the variable irradiation area. Detailed Implementation

[0028] As the background technology indicates, the industry currently widely adopts a temperature field control scheme that places a heating module in the upper part of the reaction chamber. This scheme integrates multiple heating bulbs and uses a fixed integrated reflector above the bulbs to direct thermal radiation to the substrate supporting the wafer. These bulbs are typically divided into an inner circle illuminating the central region of the wafer and an outer circle illuminating the edge region. The intensity of thermal radiation received by different areas of the wafer is adjusted by changing the power ratio of the inner and outer circles of bulbs. However, this fixed reflector scheme has limitations in achieving precise temperature field control and struggles to meet the stringent requirements for temperature field uniformity under different process conditions.

[0029] Existing technologies face significant technical bottlenecks in controlling the temperature field during epitaxial growth. First, existing devices typically employ reflectors with a fixed angle relative to the heating structures. This results in a fixed irradiation area on the wafer surface formed by the thermal radiation emitted from each heating structure, lacking flexibility in temperature field control. Second, existing technologies primarily rely on adjusting the power ratio between the inner and outer rings (i.e., the center and edge) of the heating structures to achieve temperature control; however, the adjustable range of this power ratio is severely limited. To prevent significant thermal stress caused by excessive temperature differences between the center and edge regions, leading to deformation or cracking, this power ratio has an adjustment limit, restricting the effective range of temperature field control. Furthermore, it is necessary to correct the problem of larger epitaxial layer thickness in the wafer's center and edge regions, and smaller thickness in the transition region between them, for example, resulting in a "W-shaped" thickness profile in the final film cross-section (e.g.,...). Figure 1 As shown in the figure, the existing power ratio adjustment methods are difficult to improve this problem.

[0030] To address the aforementioned technical problems, the temperature field control device provided in this embodiment includes an annular base and multiple thermal radiation units arranged in a ring array on the base. Each thermal radiation unit includes a heating structure, a corresponding reflective structure, and a driving structure connected to the reflective structure and used to drive the reflective structure to change its attitude or position relative to the heating structure. By adjusting the attitude or position of the reflective structure through the driving structure, the thermal radiation from the heating structure is reflected by the reflective surface of the reflective structure, allowing the irradiation area on the wafer surface to move radially. This enables each thermal radiation unit to independently adjust its irradiation area. Since the temperature field control device includes multiple adjustable thermal radiation units, by selectively adjusting the attitude or position of one or more reflective structures, the distribution of thermal radiation energy applied to different radial positions on the wafer surface can be actively changed, rather than being limited to a fixed heating mode. This enhances the ability to control the overall temperature field distribution of the wafer and can meet more complex temperature field control requirements.

[0031] To make the above-mentioned objectives, features and advantages of the present invention more apparent and understandable, the specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0032] refer to Figures 2 to 5 , Figure 2 This is a partial structural schematic diagram of the cross-section of the temperature field control device according to an embodiment of the present utility model; Figure 3 This is a top view of the temperature field control device according to an embodiment of the present invention, showing a half-section of the first cover plate 106. Figure 4 This is a schematic diagram of the inner ring thermal radiation unit group in the temperature field control device according to an embodiment of this utility model during operation. Figure 5 This is a schematic diagram of the outer ring thermal radiation unit group in operation in the temperature field control device of this utility model embodiment. This utility model embodiment provides a temperature field control device for controlling the temperature of a wafer 200. The temperature field control device includes: a base 100, which is ring-shaped; multiple thermal radiation units arranged in a ring array on the base 100, each thermal radiation unit including: a heating structure 102 for providing thermal radiation; a reflecting structure 103 corresponding to the heating structure 102, the reflecting structure 103 having a reflecting surface 101 facing the heating structure 102; and a driving structure 104 corresponding to the reflecting structure 103, the driving structure 104 being connected to the reflecting structure 103, the driving structure 104 driving the reflecting structure 103 to change the attitude or position of the reflecting structure 103 relative to the heating structure 102, causing the thermal radiation irradiation area of ​​the heating structure 102 reflected by the reflecting surface 101 to move radially on the surface of the wafer 200.

[0033] The temperature field control device provided in this embodiment includes an annular base 100 and multiple thermal radiation units arranged in a ring array on the base 100. Each thermal radiation unit includes a heating structure 102, a reflective structure 103 corresponding to the heating structure 102, and a driving structure 104 connected to the reflective structure 103 and used to drive the reflective structure 103 to change its attitude or position relative to the heating structure 102. By adjusting the attitude or position of the reflective structure 103 through the driving structure 104, the thermal radiation from the heating structure 102, after being reflected by the reflective surface 101 of the reflective structure 103, can radially move in the irradiation area on the surface of the wafer 200. This allows each thermal radiation unit to independently adjust its thermal radiation irradiation area. Since the temperature field control device contains multiple adjustable thermal radiation units, by selectively adjusting the orientation or position of one or more reflective structures 103, it can actively change the distribution of thermal radiation energy applied to different radial positions on the surface of the wafer 200, rather than being limited to a fixed heating mode. This enhances the ability to regulate the overall temperature field distribution of the wafer 200 and can meet more complex temperature field control requirements.

[0034] In this embodiment, the base 100 is annular. The annular shape of the base 100 allows for the arrangement of multiple thermal radiation units in a ring array. Furthermore, the circular shape of the wafer 200 ensures that the temperature field control device can surround the wafer 200 to be processed, achieving effective and controllable heating of the wafer 200.

[0035] In this embodiment, multiple thermal radiation units are arranged in a ring array on the base 100.

[0036] As the output source for providing thermal radiation, multiple thermal radiation units are arranged in a ring array along the base 100. This means that thermal radiation can be applied to the wafer 200 from multiple circumferentially spaced thermal radiation units. By adjusting the thermal radiation direction of each thermal radiation unit, the energy input of different areas on the surface of the wafer 200 can be controlled, which enhances the ability to regulate the overall temperature field distribution of the wafer 200, meets more complex temperature field control requirements, and helps to improve the uniformity of epitaxial growth on the surface of the wafer 200.

[0037] It should be noted that, in order to achieve precise radial control of the surface temperature distribution of the wafer 200, the multiple thermal radiation units arranged circumferentially along the annular base 100 can be divided into at least two groups, for example, an inner ring thermal radiation unit group and an outer ring thermal radiation unit group.

[0038] Specifically, such as Figure 6 As shown, the driving structure 104 in the inner ring thermal radiation unit group is configured to drive each of the respective reflective structures 103 to adjust its attitude within a preset variable angle range, for example, as Figure 4 As shown, its tilt angle with the horizontal plane can vary between 10.9° and 18.43°. Through this range of angle adjustments, the thermal radiation reflected by the heating structure 102 from the inner ring thermal radiation unit is specifically directed and covers the central region of the wafer 200. The resulting variable irradiation area can dynamically cover an area extending from the center of the wafer 200 (Φ0 mm) to a certain radial position (e.g., up to a diameter of Φ90 mm).

[0039] Accordingly, such as Figure 6 As shown, the outer ring thermal radiation unit group is located outside the inner ring thermal radiation unit group. The driving structure 104 of the outer ring thermal radiation unit group can independently drive each of its respective reflection structures 103 to adjust its attitude within another preset variable angle range, for example, as... Figure 5As shown, its tilt angle can vary between 7.02° and 15.48°. This adjustment allows the thermal radiation reflected by the outer ring thermal radiation unit to be primarily focused on the edge region of wafer 200. The resulting variable irradiation area can cover a region extending outward from a certain intermediate radial position (e.g., approximately Φ60 mm in diameter) to the outermost edge of wafer 200 (e.g., up to Φ150 mm in diameter for a 300 mm diameter wafer 200).

[0040] By independently controlling the reflective structures 103 of the inner and outer thermal radiation unit groups within their respective angular ranges (7°-25° for the inner ring and 5°-20° for the outer ring), the corresponding irradiation area can be flexibly adjusted. This not only enables separate control of heat input to the center and edge regions of the wafer 200, but more importantly, by precisely setting the angle between the reflective structure 103 in the inner thermal radiation unit group and the horizontal plane, the boundary between the irradiation range of the center and edge regions, as well as any potential overlap (e.g., the Φ60mm-Φ90mm region), can be adjusted to a certain extent. This allows for more effective compensation for thermal load differences caused by factors such as pattern density at different radial positions of the wafer 200. This overcomes the uniformity control bottleneck (e.g., difficulty in adjusting the W-shaped profile) caused by relying solely on fixed inner and outer rings and power ratio adjustments in existing technologies. Therefore, it greatly enhances the flexibility and accuracy of controlling the surface temperature distribution of the entire wafer 200 (especially the radial temperature gradient of the wafer 200), making it possible to optimize film thickness uniformity during epitaxial growth and other processes, which is beneficial for improving device performance and yield.

[0041] In this embodiment, the heating structure 102 is used to provide thermal radiation. The heating structure 102 is the component that generates heat energy in each thermal radiation unit, mainly to provide the necessary energy source for processes that require a high-temperature environment, such as epitaxial growth.

[0042] In this embodiment, the heating structure 102 includes: a base 1021, which is disposed on the base 100; and a bulb 1022, which is fixedly connected to the base 1021, and the bulb 1022 is located on the side wall of the base 1021 near the center of the base 100.

[0043] The base 1021 is mounted on the annular base 100, and the bulb 1022 is fixed to the base 1021 as the actual heating element. Because the bulb 1022 is located on the side wall of the base 1021 near the center of the base 100, the bulb 1022 is close to the wafer 200, so that the heat radiation emitted by the bulb 1022 can reach the surface of the wafer 200 as much as possible.

[0044] As an example, the number of bulbs 1022 is 32. The 32 bulbs 1022 provide 32 heat output points, which significantly increases the degree of freedom in temperature field control compared to a smaller number of bulbs 1022. Therefore, more bulbs 1022 means that the heating area on the surface of wafer 200 can be more finely divided, enhancing the ability to adjust the temperature in local areas.

[0045] In this embodiment, the reflective structure 103 corresponds to the heating structure 102, and the reflective structure 103 has a reflective surface 101 facing the heating structure 102.

[0046] The reflective structure 103 corresponds to the heating structure 102, and the reflective surface 101 of the reflective structure 103 faces the heating structure 102, thereby reflecting the thermal radiation from the corresponding heating structure 102. This redirects the heat that might otherwise dissipate in multiple directions back to the wafer 200, improving the efficiency of the thermal radiation unit in heating the wafer 200. This allows the thermal energy to be effectively utilized and guided to a predetermined position on the wafer 200, which is beneficial for achieving effective heating and temperature control of a specific area on the surface of the wafer 200.

[0047] In this embodiment, the surface of the reflective surface 101 of the reflective structure 103 is coated with a reflective coating.

[0048] A reflective coating is applied to the reflective surface 101 of the reflective structure 103. The high reflectivity of the reflective coating significantly enhances the reflection efficiency of the reflective surface 101 to incident thermal radiation (especially the infrared band), thereby reducing the absorption loss of heat during the reflection process. This ensures that most of the heat generated by the heating structure 102 can be effectively reflected and directed to the wafer 200, improving the energy utilization rate of the temperature field control device.

[0049] In this embodiment, the reflective coating material includes gold. Gold has extremely high reflectivity in the infrared band and is chemically stable, thereby ensuring that the reflective coating can maintain excellent thermal radiation reflection performance for a long time under high-temperature operating conditions, minimizing thermal radiation energy loss, and guaranteeing the stability and durability of reflection efficiency.

[0050] In this embodiment, the reflecting surface 101 of the reflecting structure 103 is a concave curved surface.

[0051] The reflective surface 101 of the reflective structure 103 is a concave curved surface. Through the optical focusing characteristics of the concave curved surface, the heat radiation from the heating structure 102 can be converged and redistributed. This can effectively control the heat radiation area and energy distribution reflected on the surface of the wafer 200, so that heat can be projected onto the target area more concentratedly or more evenly. This enhances the ability to regulate the overall temperature field distribution of the wafer 200 and can meet more complex temperature field control requirements.

[0052] As an example, the reflective structure 103 uses a stainless steel substrate and the reflective coating is a layer of high reflectivity material.

[0053] The reflective structure 103 uses a stainless steel substrate, which provides excellent mechanical strength, high-temperature resistance, and machinability, ensuring the structural stability of the reflective structure 103 under high-temperature operating environments. A high-reflectivity coating on the surface of the stainless steel substrate achieves efficient heat radiation reflection. Therefore, the composite structure of the stainless steel substrate and the reflective coating makes the reflective structure 103 both robust and durable, and highly efficient at reflecting heat, enabling it to operate stably for extended periods under harsh process conditions.

[0054] In this embodiment, the driving structure 104 corresponds to the reflecting structure 103. The driving structure 104 is connected to the reflecting structure 103. The driving structure 104 is used to drive the reflecting structure 103 to change the attitude or position of the reflecting structure 103 relative to the heating structure 102, so that the area of ​​the heat radiation irradiated by the heating structure 102 reflected by the reflecting surface 101 moves radially on the surface of the wafer 200.

[0055] The driving structure 104 is the actuator for active temperature field control. The driving structure 104 is connected to the corresponding reflective structure 103 and can change the orientation or position of the reflective structure 103, thereby precisely adjusting the reflection angle of the reflective surface 101 on the heat radiation of the heating structure 102. This directly changes the specific position of the reflected heat radiation that is finally projected onto the surface of the wafer 200, causing the irradiated area of ​​the heat radiation to move radially (towards the center or edge of the wafer 200). This allows each heat radiation unit to independently adjust its heating area and actively change the distribution of heat radiation energy applied to different radial positions on the surface of the wafer 200, rather than being limited to a fixed heating mode. This enhances the ability to control the overall temperature field distribution of the wafer 200 and can meet more complex temperature field control requirements.

[0056] In this embodiment, the driving structure 104 is a motor. For example, a micro stepper motor or a servo motor.

[0057] The drive structure 104 is designated as a motor. By applying an electrical signal to the motor, the rotation angle of the motor can be precisely controlled. In turn, the electrical control command is converted into precise and repeatable attitude adjustment of the reflective structure 103, which enables high-precision control of the heat radiation irradiation area.

[0058] As an example, the temperature field control device can independently program and set the angle of the reflection structure 103 of each thermal radiation unit through the control system software, which is conducive to the accurate construction of complex temperature field distribution and the digital management of process parameters.

[0059] In this embodiment, both the reflective structure 103 and the driving structure 104 are disposed on the side of the heating structure 102 away from the base 100.

[0060] The wafer 200 is positioned at the center of the base 100, and the reflective structure 103 and the driving structure 104 are arranged on the side of the heating structure 102 away from the base 100, so that the reflective structure 103 can reflect the thermal radiation generated by the heating structure 102 onto the wafer 200.

[0061] In this embodiment, the reflective structure 103 is disposed at the end of the driving structure 104 near the heating structure 102. The reflective structure 103 and the driving structure 104 are connected by a swinging connection. The driving structure 104 is used to drive the reflective structure 103 to swing in the vertical plane.

[0062] The reflective structure 103 is located at the end of the driving structure 104 near the heating structure 102, and the reflective structure 103 and the heating structure 102 are connected by a swinging connection to achieve movement. This allows the driving structure 104 to drive the reflective structure 103 to swing in a vertical plane, enabling the reflective structure 103 to adjust its angle in a vertical plane perpendicular to the base 100. When the angle with the surface of the base 100 increases, the heat radiation reflection area moves towards the center of the wafer 200; when the angle with the surface of the base 100 decreases, the heat radiation reflection area moves towards the edge of the wafer 200. Therefore, by swinging the reflective structure 103 in a vertical plane, the heat radiation reflection area can be adjusted in the radial direction, enhancing the ability to control the overall temperature field distribution of the wafer 200 and meeting more complex temperature field control requirements.

[0063] It should be noted that during the oscillation of the reflective structure 103, the reflective structure 103 oscillates around a horizontally set axis to change the tilt angle. The change in the tilt angle of the reflective structure 103 directly determines the target area of ​​thermal radiation reflection. By precisely controlling the tilt angle, the position where thermal radiation finally irradiates the surface of the wafer 200 can be controlled, so that the temperature field can be quantitatively controlled.

[0064] In this embodiment, the reflective structure 103 and the heating structure 102 are arranged at intervals along the axial direction of the base 100.

[0065] The reflective structure 103 and the heating structure 102 are spaced apart in the axial direction of the base 100, which ensures that the heat radiation emitted by the heating structure 102 has enough space to spread to the surface of the reflective structure 103. This avoids overheating, efficiency reduction or physical interference caused by direct contact between the two, and also increases the degree of freedom of adjustment of the reflective structure 103. Therefore, it ensures an effective heat radiation transmission path and normal realization of the reflection function, enhances the ability to control the overall temperature field distribution of the wafer 200, and can meet more complex temperature field control requirements.

[0066] In this embodiment, the heating structure 102, the reflection structure 103, and the driving structure 104 in the thermal radiation unit correspond one-to-one.

[0067] The heating structure 102, the reflection structure 103, and the driving structure 104 are in a one-to-one correspondence, ensuring that each independent heating bulb 1022 has its own dedicated and independently controllable reflection surface 101 and driving motor. This enables the independent adjustment of the thermal radiation contributed to the surface of the wafer 200 by each bulb 1022. Therefore, this is the structural basis for achieving high-precision and high-flexibility temperature field control, enhancing the ability to control the overall temperature field distribution of the wafer 200, meeting more complex temperature field control requirements, and helping to solve the epitaxial uniformity problem under complex patterned wafers or special process requirements.

[0068] In this embodiment, the temperature field control device further includes a cooling structure 105 disposed on the base 100, and the driving structure 104 of each of the thermal radiation units is in contact with the cooling structure 105.

[0069] The cooling structure 105 contacts the driving structure 104 of each of the aforementioned thermal radiation units, solving the heat dissipation problem of the driving structure 104 in a high-temperature working environment. Through the heat conduction of the cooling structure 105, the heat generated by the driving structure 104 and the heat absorbed from the surrounding environment are effectively dissipated, thereby preventing the driving structure 104 from experiencing performance degradation, shortened lifespan, or even failure due to overheating. This ensures the long-term stability and reliability of the attitude and position adjustment function of the reflective structure 103, enabling the temperature field control device to operate continuously and accurately during high-temperature and long-term processes, which is beneficial to improving the overall reliability and process stability of the equipment.

[0070] In this embodiment, the cooling structure 105 is annular, and each of the driving structures 104 is disposed on the inner sidewall of the cooling structure 105.

[0071] The cooling structure 105 is annular, and the drive structure 104 is fixedly installed on the inner wall of the cooling structure 105. Thus, the cooling structure 105 can match the layout of the annularly arranged heat radiation units, providing a unified and continuous cooling interface for all drive structures 104, thereby simplifying the structure of the cooling system. Therefore, this integrated installation method not only saves space, but also ensures that the drive structure 104 of each heat radiation unit can effectively contact the cooling surface, so that the heat dissipation efficiency is guaranteed, which is conducive to achieving compact and efficient equipment integration.

[0072] In this embodiment, the cooling structure 105 is a water-cooled plate, and the water-cooled plate has a coolant channel inside.

[0073] The cooling structure 105 uses a water-cooled plate with a coolant channel inside. It utilizes the high specific heat capacity and circulating flow of water to efficiently absorb and remove heat. Compared with air cooling and other methods, it can provide stronger heat dissipation capacity and more stable cooling effect. Therefore, it is particularly suitable for dealing with the heat generated by the motor itself and the large heat load conducted from the high-temperature bulb 1022 and the reflector structure 103. This allows the temperature of key components such as the drive structure 104 to be controlled within a safe range even at very high operating temperatures. This helps to ensure the long-term stable operation and high-precision control of the temperature field control device under harsh process conditions.

[0074] It should be noted that at the location of the cooling structure 105 between adjacent thermal radiation units, the cooling structure 105 is fixedly connected to the substrate by screws. It should be noted that the screws need to avoid the internal coolant channels.

[0075] The cooling structure 105 and the base 100 are connected by screws at the cooling structure 105 between adjacent heat radiation units, thereby ensuring that the water-cooled plate is firmly installed on the base 100 and providing reliable support for the drive structure 104, etc. In addition, the screws avoid the coolant channel, thus ensuring the integrity and sealing of the coolant circulation path inside the water-cooled plate while achieving a firm connection, preventing leakage, and enabling the water-cooled plate to safely and effectively perform its dual functions of support and heat dissipation, which is conducive to improving the overall reliability and safety of the equipment.

[0076] In this embodiment, the temperature field control device includes: a first cover plate 106, located on the side of each of the reflective structures 103 away from the base 100, and the projection surface of the first cover plate 106 covers the area formed by each of the reflective structures 103.

[0077] The first cover plate 106 is located above all the reflective structures 103, thereby effectively blocking the heat radiation that is lost upward from the reflective structure 103 area, and then reflecting this part of the heat radiation back to the wafer 200. This helps to form a more stable thermal environment inside the temperature field control device, reduce external disturbances, and thus improve the energy utilization efficiency of the entire temperature field control device. It may also improve the heating uniformity, so that the heat is more concentrated on the wafer 200, which is beneficial to energy saving and may improve the stability of process control.

[0078] Specifically, the first cover plate 106 is annular, and the center of the first cover plate 106 corresponds to the center of the base 100.

[0079] The first cover plate 106 is annular, and the center of the first cover plate 106 corresponds to the center of the base 100, so that the geometry of the first cover plate 106 matches the annular thermal radiation unit array and the base 100, thereby completely covering the area where all the reflective structures 103 are located, thus ensuring effective suppression of outward heat loss, and helping to avoid additional temperature non-uniformity introduced by the asymmetry of the shape or position of the first cover plate 106.

[0080] It should be noted that the first cover plate 106 defines a central opening, which is used to allow a temperature sensor to pass through or through it for non-contact temperature measurement.

[0081] An opening is provided at the center of the first cover plate 106, which can be used as a channel for setting temperature sensors. This provides the necessary physical channel for real-time monitoring of the temperature at the center or in a specific area of ​​the wafer 200. This allows non-contact temperature measuring devices such as pyrometers to directly observe the surface of the wafer 200 through the opening and obtain accurate temperature feedback signals. Therefore, the opening is a key structural element for realizing closed-loop temperature control or process monitoring, enabling the dynamic adjustment of the thermal radiation parameters of the thermal radiation unit based on the actual measured temperature data.

[0082] It should be noted that the temperature field control device includes: a ring-shaped cooling structure 105 disposed on the base 100, and the driving structure 104 of each heat radiation unit in contact with the inner wall of the cooling structure 105; the first cover plate 106 is disposed on the inner wall of the cooling structure 105, and the first cover plate 106 is located on top of the driving structure 104.

[0083] The first cover plate 106 is fixedly installed on the inner wall of the cooling structure 105 and located on top of the drive structure 104, so that the first cover plate 106 can protect the drive structure 104 below; in addition, the first cover plate 106 is also located on the inner wall of the cooling structure 105, and the first cover plate 106 dissipates heat through its connection with the cooling structure 105.

[0084] In this embodiment, the surface of the first cover plate 106 facing the reflective structure 103 is coated with a reflective coating.

[0085] A reflective coating is applied to the surface of the first cover plate 106 facing the reflective structure 103, thereby enabling the inner surface of the first cover plate 106 to also have the ability to efficiently reflect thermal radiation. This allows the thermal radiation leaking between adjacent reflective structures 103 to be reflected again to the surface of the wafer 200 via the inner surface of the first cover plate 106, reducing heat loss and maximizing heat utilization. This allows more heat energy to be effectively directed to the wafer 200, which is beneficial for improving heating efficiency.

[0086] It should be noted that the temperature field control device further includes: a second cover plate 107 (e.g., Figure 2 As shown), it is located on the surface of the drive structure facing the center of the base 100.

[0087] The second cover plate 107 is used to reflect the thermal radiation exposed between the reflective structures in the adjacent thermal radiation units and propagating to the drive structure 104 onto the wafer, which helps to improve the thermal efficiency of the temperature field control device, and also protects the drive structure 104 from high temperature, thereby improving the service life of the drive structure.

[0088] While the present invention has been disclosed above, it is not limited thereto. Any person skilled in the art can make various modifications and alterations without departing from the spirit and scope of the present invention; therefore, the scope of protection of the present invention should be determined by the scope defined in the claims.

Claims

1. A temperature field control device, characterized in that, The temperature control device is used for temperature control of wafers, and includes: The base is annular; Multiple thermal radiation units are arranged in a ring array on the base, and the thermal radiation units include: Heating structure, used to provide thermal radiation; A reflective structure, corresponding to the heating structure, has a reflective surface facing the heating structure; A driving structure, connected to a reflective structure, is used to drive the reflective structure to change its orientation or position relative to the heating structure, so that the area of ​​the heating structure irradiated by the heat radiation reflected by the reflective surface moves radially on the wafer surface.

2. The temperature field control device as described in claim 1, characterized in that, The reflective structure is disposed at the end of the driving structure near the heating structure. The driving structure and the reflective structure are connected by a swinging connection. The driving structure is used to drive the reflective structure to swing in a vertical plane.

3. The temperature field control device as described in claim 1, characterized in that, Along the axial direction of the base, the reflective structure and the heating structure are arranged at intervals.

4. The temperature field control device as described in claim 1, characterized in that, The reflecting surface of the reflective structure is a concave curved surface.

5. The temperature field control device as described in claim 1, characterized in that, Both the reflective structure and the driving structure are located on the side of the heating structure away from the base.

6. The temperature field control device as described in claim 1, characterized in that, The temperature field control device further includes a cooling structure disposed on the base, wherein the driving structure of each of the thermal radiation units is in contact with the cooling structure.

7. The temperature field control device as described in claim 6, characterized in that, The cooling structure is annular, and each of the driving structures is disposed on the inner sidewall of the cooling structure.

8. The temperature field control device as described in claim 6, characterized in that, The cooling structure is a water-cooled plate, and the water-cooled plate has coolant channels inside.

9. The temperature field control device as described in claim 1, characterized in that, The temperature field control device includes: a first cover plate located on the side of each of the reflective structures away from the base, and the projection surface of the first cover plate covers the area formed by each of the reflective structures.

10. The temperature field control device as described in claim 9, characterized in that, The first cover plate is ring-shaped, and the center of the first cover plate corresponds to the center of the base.

11. The temperature field control device as described in claim 9, characterized in that, The temperature field control device includes: a ring-shaped cooling structure disposed on the base, wherein the driving structure of each heat radiation unit and the first cover plate are in contact with the inner wall of the cooling structure, and the first cover plate is located on top of the driving structure.

12. The temperature field control device as described in claim 1, characterized in that, The temperature field control device includes a second cover plate located on the surface of the drive structure facing the center of the base.

13. The temperature field control device as described in claim 1, characterized in that, The heating structure includes: A base is mounted on the pedestal; The light bulb is fixedly connected to the base, and the light bulb is located on the side wall of the base near the center of the base.

14. The temperature field control device as described in claim 1, characterized in that, The drive structure includes a motor.

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