A busbar copper busbar structure to improve parasitic inductance

Abstract

This utility model relates to the field of circuit equipment technology and discloses a busbar copper bus structure for improving parasitic inductance. It includes an improved busbar copper bus and a non-improved busbar copper bus. The improved busbar copper bus has a copper busbar substrate in the middle, a bent portion fixedly connected to the top of the substrate, a connecting portion fixedly connected to the top of the bent portion, and wiring extension plates fixedly connected to the lower sides of both sides of the substrate. A bent plate is fixedly connected to the other end of each wiring extension plate, and a wiring plate is fixedly connected to the other end of each bent plate. This busbar copper bus structure for improving parasitic inductance has a short distance of 17.5mm from the positive terminal of the positive busbar copper bus to the positive capacitor terminal, resulting in a shorter current path and better overall performance. It achieves the following technical effects: 1. Reduced parasitic inductance; 2. Improved dynamic response; 3. Optimized current sharing and thermal performance; 4. Suppression of electromagnetic interference (EMI); 5. Maximized capacitor efficiency.

Description

Technical Field

[0001] This utility model relates to the field of circuit equipment technology, specifically to a busbar copper busbar structure for improving parasitic inductance. Background Technology

[0002] When designing the DC bus of the high-frequency switching IGBT / MOSFET used in mainstream inverters / frequency converters, it is necessary to consider not only the utilization rate of the DC bus capacitor, but also the parasitic inductance, dynamic response, current sharing and thermal performance optimization, and electromagnetic interference issues in the design of the bus copper bus. Only by continuously improving the design of the bus copper bus can the stability of the inverter and the reliability of the system be improved.

[0003] Therefore, this utility model provides a busbar copper bus structure that improves parasitic inductance. This copper bus structure addresses the shortcomings of existing technologies, mainly by solving the following technical issues:

[0004] 1. Reduce parasitic inductance

[0005] 2. Improve dynamic response

[0006] 3. Flow uniformity and thermal performance optimization

[0007] 4. Suppress electromagnetic interference (EMI)

[0008] 5. Maximize capacitor efficiency Utility Model Content

[0009] (a) Technical problems to be solved

[0010] To address the shortcomings of existing technologies, this invention provides a busbar copper bus structure that improves parasitic inductance, thereby solving the problems mentioned in the background section.

[0011] (II) Technical Solution

[0012] To achieve the above objectives, this utility model provides the following technical solution: a busbar copper bus structure for improving parasitic inductance, comprising an improved busbar copper bus and a pre-improvement busbar copper bus. The improved busbar copper bus has a copper busbar base plate in the middle. A bent portion is fixedly connected to the top of the copper busbar base plate, and a connecting portion is fixedly connected to the top of the bent portion. Wiring extension plates are fixedly connected to the lower sides of both sides of the copper busbar base plate. A bent plate is fixedly connected to the other end of the wiring extension plate, and a wiring plate is fixedly connected to the other end of the bent plate. A positive terminal is provided on the front of the copper busbar base plate, and the number of positive terminals is three. A positive capacitor terminal is installed on the front of the copper busbar base plate, located below the positive terminal. Mounting ports are provided at both ends of the connecting portion, and mounting terminals are connected to the connecting portion through the mounting ports. A wiring port is provided on the front of the wiring plate.

[0013] Before the improvement, the wiring extension plates on both sides of the busbar copper bus were located in the middle position, while after the improvement, the wiring extension plates on both sides of the busbar copper bus were located lower than those on both sides of the busbar copper bus.

[0014] Preferably, the horizontal position of the terminal block is perpendicular to the copper busbar substrate, and the included angle between the terminal block and the bending plate is an obtuse angle of 135°.

[0015] Preferably, the included angle between the bending plate and the wiring extension plate is also an obtuse angle, and the included angle is 135°.

[0016] Preferably, the angle between the copper busbar substrate and the bent portion is an obtuse angle of 135°, and the angle between the bent portion and the connecting portion is an obtuse angle of 135°.

[0017] Preferably, the connecting portion is T-shaped.

[0018] Preferably, the three positive terminals and the circular positive capacitor terminals are on the same horizontal line and located on the central axis of the copper busbar substrate.

[0019] (III) Beneficial Effects

[0020] Compared with the prior art, this utility model provides a busbar copper bus structure that improves parasitic inductance, and has the following beneficial effects:

[0021] This improved busbar copper busbar structure, which reduces parasitic inductance, has a shorter current path and a 17.5mm distance between the positive terminal and the positive capacitor terminal. This results in better overall performance and offers the following technical advantages:

[0022] 1. Reduce parasitic inductance: Shortening the path between the positive terminals can significantly reduce the loop area, thereby reducing parasitic inductance, especially the equivalent series inductance at high frequencies. Impact: When high-frequency switches such as IGBTs / MOSFETs are operating, parasitic inductance can cause voltage spikes and ringing, leading to increased device stress and losses. Reducing inductance can suppress these phenomena and improve system reliability.

[0023] 2. Improved dynamic response: Low impedance path and closer connection reduce impedance, allowing capacitors to provide transient current to the load more quickly, such as the current demand during switching; improve the system's response speed to load changes and reduce voltage drops or overshoots.

[0024] 3. Optimized current distribution and thermal performance: The current distribution is uniform, and the short path can reduce the uneven current distribution caused by the asymmetrical layout, thus avoiding local overheating.

[0025] 4. Suppress electromagnetic interference (EMI) and reduce loop area. High-frequency noise radiation is proportional to the loop area. Shortening the positive path can reduce EMI and make it easier to pass electromagnetic compatibility tests.

[0026] 5. Maximize capacitor efficiency and reduce the impact of parasitic parameters on the filtering and energy storage effects of ESL / ESR capacitors. Close-range connection can fully utilize their high-frequency decoupling capabilities, especially in inverters and frequency converters. Attached Figure Description

[0027] Figure 1 This is a schematic diagram of the busbar copper busbar structure of this utility model;

[0028] Figure 2 This is a top view of the busbar copper busbar structure of this utility model;

[0029] Figure 3 This is a rear view of the busbar copper busbar structure of this utility model;

[0030] Figure 4 This is a side view of the busbar copper busbar structure of this utility model;

[0031] Figure 5 This is a schematic diagram of the busbar copper busbar structure before the improvement of this utility model.

[0032] In the figure: 1. Improved busbar copper busbar; 2. Copper busbar substrate; 3. Bending part; 4. Connecting part; 5. Wiring extension plate; 6. Bending plate; 7. Wiring plate; 8. Positive port; 9. Positive capacitor terminal; 10. Wiring port; 11. Mounting port; 12. Mounting terminal; 13. Busbar copper busbar before improvement. Detailed Implementation

[0033] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.

[0034] This utility model provides a technical solution.

[0035] Please see Figure 1-4A busbar copper bus structure for improving parasitic inductance includes an improved busbar copper bus 1 and a non-improved busbar copper bus 13. The improved busbar copper bus 1 has a copper busbar substrate 2 in its middle. A bending portion 3 is fixedly connected to the top of the copper busbar substrate 2, and a connecting portion 4 is fixedly connected to the top of the bending portion 3. The angle between the copper busbar substrate 2 and the bending portion 3 is an obtuse angle of 135°. The angle between the bending portion 3 and the connecting portion 4 is also an obtuse angle of 135°. Wiring extension plates 5 are fixedly connected to the lower sides of both sides of the copper busbar substrate 2. A bending plate 6 is fixedly connected to the other end of the wiring extension plate 5. The angle between the bending plate 6 and the wiring extension plate 5 is also an obtuse angle of 135°. The other end of the board 6 is fixedly connected to the terminal block 7. The horizontal position of the terminal block 7 is perpendicular to the copper busbar substrate 2. The angle between the terminal block 7 and the bending plate 6 is an obtuse angle of 135°. The front of the copper busbar substrate 2 is provided with a positive port 8. There are three positive ports 8. The front of the copper busbar substrate 2 is provided with a positive capacitor terminal 9. The positive capacitor terminal 9 is located below the positive port 8. The three positive ports 8 and the circle of the positive capacitor terminal 9 are on the same horizontal line and located on the central axis of the copper busbar substrate 2. The connecting part 4 is T-shaped. The two ends of the connecting part 4 are provided with mounting ports 11. The connecting part 4 is connected to the mounting terminal 12 through the mounting ports 11. The front of the terminal block 7 is provided with a terminal block 10.

[0036] Please see Figure 5 Before the improvement, the wiring extension plates 5 on both sides of the bus copper busbar 13 were located in the middle position. After the improvement, the wiring extension plates 5 on both sides of the bus copper busbar 1 are located lower than those on both sides of the bus copper busbar 13. After the improvement, the distance from the positive terminal of the positive terminal of the bus copper busbar to the positive terminal of the positive capacitor is 17.5mm, which is closer, the current path is shorter, and the overall effect is better.

[0037] 1. Reduce parasitic inductance: Shortening the path between the positive terminals can significantly reduce the loop area, thereby reducing parasitic inductance, especially the equivalent series inductance at high frequencies. Impact: When high-frequency switches such as IGBTs / MOSFETs are operating, parasitic inductance can cause voltage spikes and ringing, leading to increased device stress and losses. Reducing inductance can suppress these phenomena and improve system reliability.

[0038] 2. Improved dynamic response: Low impedance path and closer connection reduce impedance, allowing capacitors to provide transient current to the load more quickly, such as the current demand during switching; improve the system's response speed to load changes and reduce voltage drops or overshoots.

[0039] 3. Optimized current distribution and thermal performance: The current distribution is uniform, and the short path can reduce the uneven current distribution caused by the asymmetrical layout, thus avoiding local overheating.

[0040] 4. Suppress electromagnetic interference (EMI) and reduce loop area. High-frequency noise radiation is proportional to the loop area. Shortening the positive path can reduce EMI and make it easier to pass electromagnetic compatibility tests.

[0041] 5. Maximize capacitor efficiency and reduce the impact of parasitic parameters on the filtering and energy storage effects of ESL / ESR capacitors. Close-range connection can fully utilize their high-frequency decoupling capabilities, especially in inverters and frequency converters.

[0042] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article, or apparatus.

[0043] Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the present invention, the scope of which is defined by the appended claims and their equivalents.

Claims

1. A busbar copper bar structure for improving parasitic inductance, characterized by: The system includes an improved busbar copper bus (1) and an unimproved busbar copper bus (13). The improved busbar copper bus (1) has a copper busbar base plate (2) in the middle. A bending part (3) is fixedly connected to the top of the copper busbar base plate (2). A connecting part (4) is fixedly connected to the top of the bending part (3). Wiring extension plates (5) are fixedly connected to the bottom sides of the copper busbar base plate (2). A bending plate (6) is fixedly connected to the other end of the wiring extension plate (5). The other end of the bending plate (6) is fixed... The copper busbar substrate (2) is connected to a terminal block (7). The front side of the copper busbar substrate (2) has a positive terminal (8) with three positive terminals (8). The front side of the copper busbar substrate (2) has a positive capacitor terminal (9) with the positive capacitor terminal (9) located below the positive terminal (8). The two ends of the connecting part (4) have mounting ports (11). The connecting part (4) is connected to a mounting terminal (12) through the mounting ports (11). The front side of the terminal block (7) has a wiring port (10). The wiring extension plates (5) on both sides of the busbar copper bus (13) before the improvement are located in the middle position, and the wiring extension plates (5) on both sides of the busbar copper bus (1) after the improvement are located lower than the wiring extension plates (5) on both sides of the busbar copper bus (13) before the improvement.

2. The busbar copper bar structure for improving parasitic inductance according to claim 1, characterized in that: The horizontal position of the terminal block (7) is perpendicular to the copper busbar substrate (2), and the included angle between the terminal block (7) and the bending plate (6) is an obtuse angle of 135°.

3. The busbar copper busbar structure for improving parasitic inductance according to claim 1, characterized in that: The included angle between the bending plate (6) and the wiring extension plate (5) is also an obtuse angle, and the included angle is 135°.

4. A busbar copper busbar structure for improving parasitic inductance according to claim 1, characterized in that: The angle between the copper busbar substrate (2) and the bent portion (3) is an obtuse angle and the angle is 135°. The angle between the bent portion (3) and the connecting portion (4) is an obtuse angle and the angle is 135°.

5. A busbar copper busbar structure for improving parasitic inductance according to claim 1, characterized in that: The connecting part (4) is T-shaped.

6. A busbar copper busbar structure for improving parasitic inductance according to claim 1, characterized in that: The three positive terminals (8) and the positive capacitor terminal (9) are on the same horizontal line and located on the central axis of the copper busbar substrate (2).

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