Wafer heat treatment apparatus

Abstract

The utility model relates to a kind of wafer heat treatment device, comprising: heat treatment jar and static pressure box;The static pressure box is set on the circumferential surface of the heat treatment jar, and is interconnected with the heat treatment jar by the communicating pipe of side face;The inside of the heat treatment jar is provided with airflow guide piece.The utility model is provided with heat treatment jar and static pressure box etc. component, by the setting of static pressure box, so that protective gas is introduced into the inside of heat treatment jar before, first introduced into the inside of static pressure box, the airflow dynamic pressure in static pressure box reduces static pressure to increase, and then the effect of slowing down airflow velocity is realized, so that the airflow velocity in the heat treatment jar is stable;By the setting of guide component, the effect of guiding airflow directional motion is realized, so that after airflow is introduced into the heat treatment jar, annular airflow is generated under the action of guide component, and then the effect that the uniformity of gas flowing through each wafer is consistent is realized.

Description

Technical Field

[0001] This utility model relates to the technical field of wafer heat treatment equipment, and specifically to a wafer heat treatment device. Background Technology

[0002] Wafer heat treatment is one of the key processes in semiconductor manufacturing. It is mainly used to improve the crystal structure of the wafer, activate impurity atoms, and form oxide layers, thereby improving the performance and reliability of semiconductor devices.

[0003] In traditional heat treatment processes, the wafer to be processed is placed in a processing tank and heated by infrared lamps. During heat treatment, protective or reactive gases are introduced into the tank depending on the chip process.

[0004] In the above process, the uniformity of wafer surface temperature and the uniformity of protective gas inside the tank have a significant impact on the heat treatment quality. In the prior art, the gas is usually introduced from the top of the processing tank and flows from top to bottom through the cavity. When the gas first enters the processing tank, the flow rate is relatively fast, which leads to inconsistent gas uniformity flowing through each wafer, resulting in different finished wafer quality. Therefore, a wafer heat treatment device is proposed to solve the above-mentioned problems. Utility Model Content

[0005] Based on the above description, this utility model provides a wafer heat treatment apparatus to solve the problem that the quality of the finished wafer varies due to different flow rates when a protective gas is introduced in the existing heat treatment method.

[0006] The technical solution of this utility model to solve the above-mentioned technical problems is as follows: a wafer heat treatment apparatus, comprising: a heat treatment tank and a static pressure chamber;

[0007] The static pressure chamber is disposed on the circumferential surface of the heat treatment tank and is interconnected with the heat treatment tank through a side connecting pipe. The static pressure chamber includes a box body disposed on the circumferential surface of the tank body. Two vertical partitions are disposed on the top wall inside the box body. An exhaust chamber is formed between the opposite sides of the two vertical partitions and the inner wall of the box body. An air inlet chamber is formed on the opposite sides of the two vertical partitions. The exhaust chamber is interconnected with the side hole through a connecting pipe. An air inlet is disposed on the top of the box body and is interconnected with the air inlet chamber.

[0008] The heat treatment tank is equipped with an airflow guide.

[0009] Based on the above technical solution, the present invention can be further improved as follows.

[0010] Furthermore, the heat treatment tank includes a tank body, and side holes are provided on the circumferential surface of the tank body.

[0011] Furthermore, a perforated horizontal plate is provided between the vertical partition and the air intake chamber, and a perforated bottom plate is provided between the inner side walls of the housing. The connecting pipe is located above the perforated bottom plate, and the upper surface of the perforated bottom plate is in close contact with the lower surface of the vertical partition. A reversing cavity is formed between the perforated bottom plate and the bottom wall of the housing.

[0012] Furthermore, the interior of the exhaust chamber is provided with multiple obstruction rods, which are staggered.

[0013] Furthermore, the airflow guide includes two guide components, which are distributed in a ring at equal intervals and communicate with each other with the side hole.

[0014] Furthermore, the guiding component includes a C-shaped frame disposed on the inner wall of the tank, a guide plate is disposed between the C-shaped frame and the inner wall of the tank, one side of the guide plate is connected to the tank and the other side is open, and both ends of the C-shaped frame are open.

[0015] Furthermore, a guiding cavity is formed between the C-shaped frame and the guide plate, and a venting cavity is formed between the guide plate and the inner wall of the tank. The venting cavity is interconnected with the side hole.

[0016] Compared with the prior art, the technical solution of this application has the following beneficial technical effects:

[0017] 1. This utility model, by setting up components such as a heat treatment tank and a static pressure box, allows the protective gas to be introduced into the static pressure box before being introduced into the heat treatment tank. At this time, the gas flow pressure in the static pressure box decreases and the static pressure increases, thereby achieving the effect of slowing down the gas flow rate and stabilizing the gas flow rate introduced into the heat treatment tank.

[0018] 2. By setting up the guiding components, the effect of guiding the airflow to a specific direction is achieved, so that after the airflow enters the heat treatment tank, it generates a ring-shaped airflow under the action of the guiding components, thereby achieving the effect of uniform gas flow through each wafer. Attached Figure Description

[0019] Figure 1 A schematic diagram of the structure of a wafer heat treatment apparatus provided in an embodiment of this utility model;

[0020] Figure 2 for Figure 1 Structural sectional view;

[0021] Figure 3 for Figure 2 Another structural diagram from a different perspective;

[0022] Figure 4 for Figure 1Another perspective of the structural cross-section;

[0023] Figure 5 for Figure 4 Another structural diagram from a different perspective;

[0024] Figure 6 This is a cross-sectional view of the connection structure between the heat treatment tank and the guide assembly in an embodiment of this utility model;

[0025] Figure 7 for Figure 6 Another structural diagram from a different perspective;

[0026] Figure 8 for Figure 7 A magnified view of a portion of region A in the middle;

[0027] The attached diagram lists the components represented by each number as follows:

[0028] 1. Heat treatment tank; 11. Tank body; 12. Side hole; 2. Static pressure box; 21. Box body; 22. Vertical partition; 23. Air inlet chamber; 24. Exhaust chamber; 25. Perforated horizontal plate; 26. Obstruction rod; 27. Perforated bottom plate; 28. Reversing chamber; 29. ​​Air inlet; 3. Guide assembly; 31. C-frame; 32. Flow deflector; 33. Ventilation chamber; 34. Guide chamber. Detailed Implementation

[0029] To facilitate understanding of this application, a more complete description will be provided below with reference to the accompanying drawings, which illustrate embodiments of the present application. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that the disclosure of this application will be thorough and complete.

[0030] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.

[0031] When used herein, the singular forms of “a,” “an,” and “the” may also include the plural forms unless the context clearly indicates otherwise. It should also be understood that the terms “comprising,” “including,” or “having,” etc., specify the presence of the stated feature, whole, step, operation, component, part, or combination thereof, but do not preclude the possibility of the presence or addition of one or more other features, wholes, steps, operations, components, parts, or combinations thereof.

[0032] Please see Figures 1-5 A wafer heat treatment apparatus includes: a heat treatment tank 1 and a static pressure chamber 2;

[0033] The static pressure box 2 is disposed on the circumferential surface of the heat treatment tank 1 and is interconnected with the heat treatment tank 1 through a side connecting pipe. The heat treatment tank 1 includes a tank body 11, and a side hole 12 is provided on the circumferential surface of the tank body 11.

[0034] The static pressure box 2 includes a box body 21, which is disposed on the circumferential surface of the tank body 11. Two vertical partitions 22 are disposed on the top wall inside the box body 21. An exhaust chamber 24 is formed between the opposite sides of the two vertical partitions 22 and the inner wall of the box body 21. An air inlet chamber 23 is formed on the opposite sides of the two vertical partitions 22. The exhaust chamber 24 is interconnected with the side hole 12 through a connecting pipe. An air inlet 29 is disposed on the top of the box body 21 and is interconnected with the air inlet chamber 23.

[0035] A perforated horizontal plate 25 is provided between the vertical partition 22 and the air intake chamber 23. A perforated bottom plate 27 is provided between the inner side walls of the housing 21. The connecting pipe is located above the perforated bottom plate 27. The upper surface of the perforated bottom plate 27 is in close contact with the lower surface of the vertical partition 22. A reversing chamber 28 is formed between the perforated bottom plate 27 and the bottom wall of the housing 21. A plurality of obstructing rods 26 are provided inside the exhaust chamber 24. The plurality of obstructing rods 26 are staggered.

[0036] The heat treatment tank 1 is equipped with an airflow guide;

[0037] Based on the above, the static pressure chamber 2 has the effect of converting the dynamic pressure of the air into static pressure. When the protective gas is introduced into the chamber 21 from the air inlet 29, the airflow flows through the air inlet chamber 23, the reversing chamber 28 and the exhaust chamber 24 in sequence. During the flow of the airflow, it is blocked by the perforated horizontal plate 25, the perforated bottom plate 27 and the obstruction rod 26 in sequence, which reduces the airflow velocity, thus converting the dynamic pressure into static pressure. The converted airflow is then input into the interior of the pipe 11 through the connecting pipe.

[0038] like Figures 4-8 As shown, the airflow guide includes two guide components 3, which are distributed in a ring at equal intervals and are interconnected with the side hole 12.

[0039] The guiding component 3 includes a C-shaped frame 31 disposed on the inner wall of the tank body 11. A guide plate 32 is disposed between the C-shaped frame 31 and the inner wall of the tank body 11. One side of the guide plate 32 is connected to the tank body 11, and the other side is open. Both ends of the C-shaped frame 31 are open. A guiding cavity 34 is formed between the C-shaped frame 31 and the guide plate 32. A venting cavity 33 is formed between the guide plate 32 and the inner wall of the tank body 11. The venting cavity 33 is interconnected with the side hole 12.

[0040] Based on the above, the guide component 3 and the tank 11 cooperate with each other to generate a uniform annular airflow when the airflow flows into the tank 11. When the airflow enters the tank 11 from the side hole 12, the airflow flows along the direction of the ventilation cavity 33, that is, along the direction of the inner wall of the tank 11. After flowing around once, it enters the interior of the guide cavity 34 and continues to move along the direction of the guide cavity 34. After mixing with the annular airflow flowing out of the ventilation cavity 33, it continues to flow, forming a stable annular airflow. This makes the gas uniformity when the airflow contacts each wafer as consistent as possible, thereby making the quality of the finished wafer as consistent as possible.

[0041] In summary, this device processes the airflow to convert dynamic pressure into static pressure, resulting in a slower but more stable airflow. The stable airflow forms a relatively uniform annular airflow inside the tank 11, thereby achieving the effect of making the gas uniformity as consistent as possible when the airflow comes into contact with each wafer.

[0042] The above description is only a preferred embodiment of the present utility model and is not intended to limit the present utility model. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present utility model should be included within the protection scope of the present utility model.

Claims

1. A wafer heat treatment apparatus, characterized in that, include: A heat treatment tank (1) and a static pressure box (2); the static pressure box (2) is disposed on the circumferential surface of the heat treatment tank (1) and is connected to the heat treatment tank (1) through a side connecting pipe. The heat treatment tank (1) includes a tank body (11), and a side hole (12) is provided on the circumferential surface of the tank body (11). The static pressure box (2) includes a box body (21), and the box body (21) is disposed on the circumferential surface of the tank body (11). Two vertical partitions (22) are provided on the top wall inside the box body (21). An exhaust chamber (24) is formed between the opposite side of the two vertical partitions (22) and the inner wall of the box body (21). An air inlet chamber (23) is formed on the opposite side of the two vertical partitions (22). The exhaust chamber (24) is connected to the side hole (12) through a connecting pipe. An air inlet (29) is provided on the top of the box body (21) and is connected to the air inlet chamber (23). The heat treatment tank (1) is equipped with an airflow guide.

2. The wafer heat treatment apparatus according to claim 1, characterized in that, A perforated horizontal plate (25) is provided between the vertical partition (22) and the air inlet chamber (23), and a perforated bottom plate (27) is provided between the inner side walls of the housing (21). The connecting pipe is located above the perforated bottom plate (27). The upper surface of the perforated bottom plate (27) is in close contact with the lower surface of the vertical partition (22), and a reversing cavity (28) is formed between the perforated bottom plate (27) and the bottom wall of the housing (21).

3. The wafer heat treatment apparatus according to claim 1, characterized in that, The exhaust chamber (24) is provided with a plurality of obstruction rods (26), which are staggered.

4. The wafer heat treatment apparatus according to claim 1, characterized in that, The airflow guide includes two guide components (3), which are distributed in a ring at equal intervals and are connected to the side hole (12).

5. The wafer heat treatment apparatus according to claim 4, characterized in that, The guide assembly (3) includes a C-shaped frame (31) disposed on the inner wall of the tank (11). A guide plate (32) is disposed between the C-shaped frame (31) and the inner wall of the tank (11). One side of the guide plate (32) is connected to the tank (11), and the other side is open. Both ends of the C-shaped frame (31) are open.

6. The wafer heat treatment apparatus according to claim 5, characterized in that, A guide cavity (34) is formed between the C-shaped frame (31) and the guide plate (32), and a venting cavity (33) is formed between the guide plate (32) and the inner wall of the tank (11). The venting cavity (33) is connected to the side hole (12).

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