A microwave transmitting module

Abstract

This utility model relates to the field of satellite communication equipment technology, specifically a microwave transmitting module, including a frequency synthesizer, a microwave switch, a two-stage power amplifier, a final-stage power amplifier, and an isolator connected in sequence. The output of the isolator is connected to a transmitting antenna and a detector to realize signal transmission and monitoring. It also includes a metal body for integrating the frequency synthesizer, microwave switch, and pre-amplifier. The metal body is a cuboid aluminum alloy body with a rectangular cavity on one side. A low-temperature co-fired ceramic substrate is mounted on the bottom surface of the cavity. Several circular unidirectional heat dissipation channels penetrating the other side of the metal body are formed on the bottom surface of the cavity. The unidirectional heat dissipation channels have a unidirectional flow structure, with the airflow direction away from the microwave transmitting module. This utility model's microwave transmitting module improves the radio frequency performance of the microwave transmitting module, while also improving heat dissipation efficiency, avoiding localized overheating, and increasing the service life of the microwave transmitting module.

Description

Technical Field

[0001] This utility model relates to the field of satellite communication equipment technology, specifically to a microwave transmitting module. Background Technology

[0002] In microwave transmission applications (such as radar detection and wireless communication), microwave transmission modules possess the characteristics of stable signal amplification, precise timing coordination, and reliable power supply adaptation. They are primarily responsible for signal transmission. The outdoor unit transceiver front-end circuit of a satellite communication ground station is the most important component of the entire satellite communication system. Its performance directly affects the quality of the entire satellite link communication.

[0003] Microwave transmitting modules contain power amplifiers and other electronic components. Currently, the RF link of microwave transmitting modules is often built using discrete components, but this has the following technical drawbacks:

[0004] First, the frequency synthesizer, microwave switch and preamplifier are connected by cables, and the RF path is more than 10cm long. Due to the RF insertion loss of more than 2.5dB, the signal attenuation is severe.

[0005] Second, the heat dissipation method is singular. Heat is dissipated through the heat sink via thermal radiation. When the heat distribution is uneven, the power consumption of the power amplifier is too high, the local temperature rises, and the lifespan of the microwave transmitting module is shortened.

[0006] Therefore, it is necessary to design a microwave transmitting module that can improve the above-mentioned problems. Summary of the Invention

[0007] To address the problems of existing technologies, this utility model provides a microwave transmitting module, including a signal generation and amplification link, a control and drive link, and a power supply link; wherein, the signal generation and amplification link includes a frequency synthesizer, a microwave switch, a two-stage power amplifier, a final-stage power amplifier, and an isolator connected in sequence, with the output of the isolator connected to a transmitting antenna and a detector to realize signal transmission and monitoring; it also includes a metal body for integrating the frequency synthesizer, microwave switch, and pre-amplifier;

[0008] The metal body is a cuboid aluminum alloy metal body. A rectangular cavity is formed on one side of the metal body. A low-temperature co-fired ceramic substrate is mounted on the bottom surface of the cavity for integrating a frequency synthesizer, a microwave switch and a pre-amplifier on the low-temperature co-fired ceramic substrate.

[0009] The bottom surface of the concave cavity is provided with several circular hole-shaped one-way heat dissipation channels that penetrate the other side of the metal body. The one-way heat dissipation channel is a one-way flow structure. The airflow direction of the one-way flow structure is away from the microwave transmitting module. The bottom of the low-temperature co-fired ceramic substrate is connected to the heat dissipation substrate through thermally conductive adhesive. The bottom of the heat dissipation substrate is connected to the top of several one-way heat dissipation channels. The one-way flow structure enables the airflow to achieve one-way flow and absorb the heat generated by the microwave transmitting module.

[0010] The bottom surface of the concave cavity is provided with several columnar heat dissipation protrusions located on the outside of the low-temperature co-fired ceramic substrate, and the several heat dissipation protrusions are connected through the heat dissipation substrate to increase the contact area with air and enhance the heat conduction efficiency.

[0011] Furthermore, the low-temperature co-fired ceramic substrate has a multilayer structure, including a top layer of radio frequency microstrip lines, an intermediate layer of ground plane, and a bottom layer of power supply filter capacitors;

[0012] Furthermore, multiple strip-shaped heat dissipation channels are provided on the heat dissipation substrate, and the outlet of the strip-shaped heat dissipation channel is connected to the inlet of the unidirectional heat dissipation channel to realize unidirectional gas outflow;

[0013] Furthermore, the heat dissipation substrate is an aluminum alloy heat dissipation plate;

[0014] Furthermore, the control and drive link includes: a timing control circuit, which is connected to the forward and reverse pulse drivers, the pulse power supply modulator, and the pulse driver respectively, to coordinate the timing control;

[0015] The forward and reverse pulse driver receives timing control circuit and radio frequency modulated TTL signal, outputs control signal to microwave switch, and is connected to +5V voltage provided by DC / DC converter at the power supply end.

[0016] The pulse power modulator is connected to the preamplifier and driver amplifier at its output. It is controlled by the timing control circuit and outputs a control signal to the preamplifier and driver amplifier.

[0017] The pulse driver is also connected to the gate driver, DC / DC power supply and final stage power amplifier. It is controlled by the timing control circuit and works with the gate driver and DC / DC power supply to control the final stage power amplifier in conjunction with the power-on pulse TTL signal.

[0018] Gate driver, connected to MOS switch and DC / DC power supply, regulates the gate of final stage power amplifier;

[0019] Furthermore, the power supply link includes: a DC / DC converter connected to the microwave switch and the forward and reverse pulse driver, used to power the microwave switch and the forward and reverse pulse driver;

[0020] DC / DC power supply, connected to MOS switches and gate drivers, used to power MOS switches and gate drivers;

[0021] Furthermore, the isolator is a high-isolation microwave isolator device used to block reverse-reflected signals and protect the final-stage power amplifier;

[0022] Furthermore, both the DC / DC converter and the DC / DC power supply output are connected to a filter circuit to ensure stable power supply voltage.

[0023] The beneficial effects of this utility model are:

[0024] This utility model's microwave transmitting module integrates a frequency synthesizer, microwave switch, and preamplifier into a single unit using an LTCC substrate housed within a metal body. This improves the RF performance of the microwave transmitting module, reducing RF insertion loss from 2.5dB to below 1.2dB. Furthermore, it employs thermally conductive adhesive and unidirectional heat dissipation channels for two-stage heat dissipation of the frequency synthesizer, microwave switch, and preamplifier on the LTCC substrate, enhancing heat dissipation efficiency, preventing localized overheating, and extending the lifespan of the microwave transmitting module. Attached Figure Description

[0025] Figure 1 This is a schematic diagram of the microwave transmitting module structure of this utility model;

[0026] Figure 2 This is a schematic diagram of the front structure of the metal body of this utility model;

[0027] Figure 3 This is a schematic diagram of the back structure of the metal body of this utility model;

[0028] Figure 4 This is a schematic diagram of the unidirectional heat dissipation channel structure on the bottom surface of the concave cavity of this utility model;

[0029] Figure label:

[0030] In the diagram: 1-Frequency synthesizer, 2-Microwave switch, 3-Two-stage power amplifier, 4-Final stage power amplifier, 5-Isolator, 6-Metal body, 7-One-way heat dissipation channel, 8-Heat dissipation substrate, 9-Heat dissipation boss. Detailed Implementation

[0031] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0032] Please see Figure 2-4This utility model provides a microwave transmitting module, including a signal generation and amplification link, through which the microwave transmitting module completes microwave generation-amplification-transmission; a control and drive link and a power supply link are used to ensure precise timing and voltage coordination of each link to achieve stable and controllable microwave signal transmission; the signal generation and amplification link includes a frequency synthesizer 1, a microwave switch 2, a two-stage power amplifier 3, a final-stage power amplifier 4, and an isolator 5 connected in sequence, the output of the isolator 5 is connected to a transmitting antenna and a detector to realize signal transmission and monitoring; the invention is characterized by further including a metal body 6.

[0033] The metal body 6 is a cuboid aluminum alloy metal body 6. A rectangular cavity is formed on one side of the metal body 6. A low temperature co-fired ceramic (LTCC) substrate is installed on the bottom surface of the cavity, which is used to integrate the frequency synthesizer 1, the microwave switch 2 and the pre-amplifier on the low temperature co-fired ceramic substrate.

[0034] The bottom surface of the concave cavity is provided with several circular hole-shaped one-way heat dissipation channels 7 that penetrate the other side of the metal body 6. The one-way heat dissipation channel 7 is a one-way flow structure. The airflow direction of the one-way flow structure is away from the microwave transmitting module. The bottom of the LTCC substrate is connected to the heat dissipation substrate 8 by thermally conductive adhesive. The bottom of the heat dissipation substrate 8 is connected to the top of several one-way heat dissipation channels 7. The one-way flow structure enables the airflow to achieve one-way flow and absorb the heat generated by the microwave transmitting module.

[0035] The bottom surface of the concave cavity is provided with a plurality of columnar heat dissipation protrusions 9 located on the outside of the low-temperature co-fired ceramic substrate, and the plurality of heat dissipation protrusions 9 are connected through the heat dissipation substrate 8 to increase the contact area with air and enhance the heat conduction efficiency.

[0036] Furthermore, the LTCC substrate has a multilayer structure, including a top layer of radio frequency microstrip lines, an intermediate layer of ground plane, and a bottom layer of power supply filter capacitors;

[0037] It should be noted that this application integrates the frequency synthesizer 1, microwave switch 2 and preamplifier on an LTCC substrate; the top layer is covered with a 0.25mm wide 50Ω microstrip line, the middle two layers are ground planes, and the bottom layer integrates power supply filter capacitors, realizing the three-dimensional soldering of the frequency synthesizer 1 (such as ADF4351), microwave switch 2 (such as HMC549) and preamplifier (such as ERA-5SM+), with a chip spacing ≤5mm;

[0038] LTCC substrates are multilayer substrates, which include a top layer, middle layer, and bottom layer.

[0039] The top layer features RF microstrip lines (0.15mm line width, 50Ω characteristic impedance) with a rounded transition (radius of curvature R≥0.5mm) to reduce signal reflection and enable RF signal transmission. The middle layer is a ground plane (0.2mm thick) that isolates RF and DC signals, suppresses electromagnetic crosstalk, and improves signal purity. The bottom layer integrates power supply filter capacitors to filter power supply, reduce RF-DC coupling noise, and enable three-dimensional soldering of frequency synthesizer 1 (e.g., ADF4351), microwave switch 2 (e.g., HMC549), and preamplifier (e.g., ERA-5SM+). By directly soldering discrete components such as frequency synthesizer 1, microwave switch 2, and preamplifier onto the LTCC substrate, the RF path is shortened from 10cm to less than 2cm compared to replacing traditional cable connections. This reduction in physical distance directly reduces signal transmission loss.

[0040] Furthermore, multiple strip-shaped heat dissipation channels are provided on the heat dissipation substrate 8. The outlet of the strip-shaped heat dissipation channel is connected to the inlet of the unidirectional heat dissipation channel 7 to realize unidirectional gas outflow and accelerate local heat dissipation. The strip-shaped heat dissipation channels are densely opened below the power amplifier (such as the primary power amplifier) ​​to enhance heat dissipation in a targeted manner for high heat dissipation areas, reduce local heat flux density by 40%, and increase the service life of the microwave transmitting module.

[0041] Furthermore, the heat dissipation substrate 8 is an aluminum alloy heat dissipation plate, which facilitates heat dissipation and makes the entire microwave transmitting module lightweight.

[0042] Furthermore, the control and drive link includes: a timing control circuit, which is connected to the forward and reverse pulse drivers, the pulse power supply modulator, and the pulse driver respectively, to coordinate the timing control;

[0043] The forward and reverse pulse driver receives timing control circuit and radio frequency modulation TTL signal, outputs control signal to microwave switch 2, and the power supply is connected to +5V voltage provided by DC / DC converter.

[0044] The pulse power modulator is connected to the preamplifier and driver amplifier at its output. It is controlled by the timing control circuit and outputs a control signal to the preamplifier and driver amplifier.

[0045] The pulse driver is also connected to the gate driver, DC / DC power supply and final stage power amplifier 4. It is controlled by the timing control circuit and works with the gate driver and DC / DC power supply to control the final stage power amplifier 4 in conjunction with the power-on pulse TTL signal.

[0046] Gate driver, connected to MOS switch and DC / DC power supply, regulates the gate of final stage power amplifier;

[0047] Furthermore, the power supply link includes: a DC / DC converter connected to microwave switch 2 and forward / reverse pulse driver, used to power microwave switch 2 and forward / reverse pulse driver;

[0048] DC / DC power supply, connected to MOS switches and gate drivers, used to power MOS switches and gate drivers;

[0049] Furthermore, the isolator 5 is a high-isolation microwave isolator device used to block reverse-reflected signals and protect the final stage power amplifier 4.

[0050] Furthermore, both the DC / DC converter and the DC / DC power supply output are connected to a filter circuit to ensure stable power supply voltage.

[0051] It is worth noting that this utility model provides a microwave transmitting module that integrates a frequency synthesizer 1, a microwave switch 2, and a preamplifier into one unit by using an LTCC substrate disposed within a metal body 6, thereby improving the RF performance of the microwave transmitting module and reducing the RF insertion loss from 2.5dB to below 1.2dB. By using a rectangular aluminum alloy metal body 6 with a cavity on one side, and integrating the frequency synthesizer 1, microwave switch 2, and preamplifier into one unit via an LTCC substrate, the RF insertion loss is reduced, the RF path is shortened from 10cm to less than 2cm, the insertion loss is reduced from 2.5dB to below 1.2dB, the signal attenuation is reduced by 52%, and the RF signal strength is significantly improved.

[0052] Second, the frequency synthesizer 1, microwave switch 2 and preamplifier on the LTCC substrate are cooled in two stages using thermally conductive adhesive and unidirectional heat dissipation channels to improve heat dissipation efficiency, avoid local overheating, and increase the service life of the microwave transmitting module.

[0053] The primary heat dissipation is achieved by connecting the LTCC substrate integrating the frequency synthesizer 1, microwave switch 2, and preamplifier to the aluminum alloy heat sink substrate (thermal conductivity 205 W / m·K) using thermally conductive adhesive (thermal conductivity ≥ 5 W / m·K), with a contact thermal resistance ≤ 0.5 K·m. 2 / W, quickly conducts heat from the chip to the heat dissipation substrate.

[0054] A columnar heat dissipation protrusion 9 (1.5mm high, 3mm spacing) is connected through the heat dissipation substrate to increase the contact area with air and enhance the heat conduction efficiency.

[0055] The secondary heat dissipation system utilizes a matrix-shaped unidirectional heat dissipation channel vertically positioned at the bottom of the heat dissipation substrate. The low-temperature co-fired ceramic (LTCC) substrate integrating the frequency synthesizer 1, microwave switch 2, and preamplifier is connected to the unidirectional heat dissipation channel via the heat dissipation substrate. The unidirectional heat dissipation channel has a unidirectional flow structure, allowing for unidirectional gas outflow.

[0056] By setting multiple strip-shaped heat dissipation channels on the heat dissipation substrate 8, and connecting the outlet of the strip-shaped heat dissipation channel with the inlet of the one-way heat dissipation channel 7, the gas can flow out in one direction, which accelerates the local heat dissipation. Dense strip-shaped heat dissipation holes are opened on the heat dissipation substrate below the power amplifier to enhance heat dissipation in a targeted manner for high heat areas, reducing the local heat flux density by 40%, avoiding local overheating, and increasing the service life of the microwave transmitting module.

[0057] like Figure 1 As shown, the working principle of the C-band transmitting module is as follows: The microwave transmitting module includes a signal generation and amplification link, a control and drive link, and a power supply link;

[0058] The signal generation and amplification link includes: a frequency synthesizer 1, which generates a stable microwave carrier signal, and its power supply is connected to +5V and +10V voltages; the signal output terminal of the frequency synthesizer 1 is connected to the signal input terminal of the microwave switch 2.

[0059] Microwave switch 2 is controlled by a forward and reverse pulse driver to achieve signal selection, and its power supply terminal is connected to a +5V voltage; the signal output terminal of microwave switch 2 is connected to the signal input terminal of the preamplifier + driver amplifier.

[0060] The preamplifier and driver amplifier amplify the signal initially. The power supply is connected to a +5V voltage and is controlled by a pulse power modulator to achieve pulse amplification. Its signal output is connected to the signal input of the final stage power amplifier 4.

[0061] The final stage power amplifier 4 amplifies the signal significantly. Its gate is controlled by a gate driver, and its power supply is controlled by a MOS switch (the MOS switch power supply terminal is connected to +32V). The signal output terminal of the final stage power amplifier 4 is connected to the signal input terminal of the isolator 5.

[0062] Isolator 5 blocks reverse reflected signals to protect the power amplifier. Its signal output terminals are connected to the transmitting antenna (TXANT) and the detector (DET) respectively to realize signal transmission and monitoring.

[0063] Specifically, frequency synthesizer 1 is selected from models with low phase noise characteristics (such as integrated chips based on phase-locked loop technology), and is strictly connected to +5V and +10V power supplies according to pin definitions. The output terminal is connected to the signal input pin of microwave switch 2 via a high-frequency coaxial cable. Microwave switch 2 uses an RF microwave switch 2 chip, with its power supply pin connected to +5V and its control pin connected to the output of the forward and reverse pulse drivers. The signal output terminal is also connected to the pre-amplifier + driver amplifier via a high-frequency coaxial cable. The pre-amplifier + driver amplifier can be a multi-stage transistor amplifier circuit or an integrated amplifier chip, with its power supply connected to a +5V filtered and regulated power supply. Its control pin is connected to the output of the pulse power modulator, and its signal output terminal is connected to the final stage power amplifier 4. The final stage power amplifier 4 uses a high-power microwave power amplifier chip, with its gate pin connected to the output of the gate driver. Its power supply pin is connected to a +32V power supply via a MOS switch, and the control pin of the MOS switch is associated with the gate driver and timing control circuit. The signal output terminal is connected to the antenna and detector via isolator 5 (using a high-isolation microwave isolator device).

[0064] The control and drive link includes: a timing control circuit, which coordinates the timing of the modules and is connected to the forward and reverse pulse drivers, pulse power supply modulator, and pulse driver respectively, and coordinates the timing of the signal selection and amplification stages.

[0065] The forward and reverse pulse driver receives timing control circuit and radio frequency modulation TTL signal, outputs control signal to microwave switch 2, and is powered by a +5V voltage provided by DC / DC converter.

[0066] The pulse power modulator, controlled by a timing control circuit, outputs a control signal to the preamplifier and driver amplifier, and is powered by a +5V voltage.

[0067] The pulse driver, controlled by the timing control circuit, works in conjunction with the gate driver and the DC / DC power supply to control the final stage power amplifier 4, and operates in conjunction with the power-on pulse TTL signal.

[0068] The gate driver receives a +10V voltage and precisely controls the gate state of the final stage power amplifier. It connects to the MOS switch and the DC / DC power supply.

[0069] Specifically, the timing control circuit uses programmable logic devices (such as FPGAs) to implement the timing logic through hardware description language programming. The output pins are connected to the control input pins of the forward and reverse pulse drivers, pulse power modulators, and pulse drivers, respectively, and are also connected to RF modulation TTL signals and power-on pulse TTL signals to coordinate the timing of each stage. The forward and reverse pulse drivers, pulse power modulators, and pulse drivers are selected with corresponding function driver chips. According to the chip datasheet, the power supply (e.g., +5V for the forward and reverse pulse drivers), control signals, and output control signals are connected to ensure accurate signal selection and amplification control. The gate driver is selected with a chip adapted to drive the gate of the final stage power amplifier. It is connected to a +10V power supply and outputs a precise drive signal to the gate of the final stage power amplifier. In conjunction with the MOS switch and DC / DC power supply, the power amplifier's operating state is regulated.

[0070] The power supply link includes a DC / DC converter that takes a +12V input and converts it to a +5V output, which powers modules such as microwave switch 2 and forward / reverse pulse drivers.

[0071] The DC / DC power supply outputs +15V, +12V, and -15V voltages respectively to precisely power the final stage power amplifier MOS switches, gate drivers, feedback circuits, etc.; among them, the DC / DC power supply and bias circuit that powers the MOS switches are connected to +15V voltage, the DC / DC power supply associated with the gate driver is connected to +12V voltage, and the DC / DC power supply associated with the pulse driver is connected to -15V voltage.

[0072] Specifically, the DC / DC converter uses a mature conversion module with an input of +12V and an output of +5V. The input is connected to a +12V DC power supply (such as a regulated power supply or battery pack), and the output is powered by a filter circuit to supply power to microwave switch 2, forward and reverse pulse drivers, etc. Various DC / DC power supplies are selected according to their needs, using corresponding voltage conversion modules (such as +15V, +12V, and -15V output). The input is connected to the corresponding power supply (such as the +15V input module connected to the system's +15V power supply), and the output provides precise power to MOS switches, gate drivers, etc., to ensure the voltage stability of each module.

[0073] Workflow: 1. Start-up and initialization: Connect to main power supplies such as +12V and +15V. The DC / DC converter and various DC / DC power supplies complete voltage conversion and regulation to power each module; the timing control circuit initializes the timing logic and prepares control signals.

[0074] 2. Signal generation and gating: Frequency synthesizer 1 generates a microwave carrier, and the radio frequency modulated TTL signal is input to the timing control circuit, which triggers the forward and reverse pulse drivers, controls the microwave switch 2 to gating, and allows the carrier signal to enter the preamplifier + driver amplifier.

[0075] 3. Signal amplification: The timing control circuit regulates the pulse power modulator to start the pre-amplifier and driver amplifier to initially amplify the signal; at the same time, it works with the pulse driver, gate driver and MOS switch to supply power to the final power amplifier 4 and regulate its working state, thus greatly amplifying the signal.

[0076] 4. Signal transmission and monitoring: After the amplified signal is blocked by isolator 5, the reverse signal is blocked and then radiated into space by the antenna; the detector synchronously monitors the signal parameters (such as power) and feeds them back to the system. If there is an abnormality, the timing control circuit can trigger protection or adjustment logic to ensure stable transmission.

[0077] Through the above implementation methods, stable and controllable microwave signal transmission can be achieved by the microwave transmitting module, meeting the requirements of radar, communication and other scenarios for microwave signal quality and reliability.

[0078] The above description is only a preferred embodiment of the present utility model and is not intended to limit the present utility model. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present utility model should be included within the protection scope of the present utility model.

Claims

1. A microwave transmitting module, characterized in that, It includes a signal generation and amplification link, a control and drive link, and a power supply link; wherein, the signal generation and amplification link includes a frequency synthesizer, a microwave switch, a two-stage power amplifier, a final-stage power amplifier, and an isolator connected in sequence, and the output of the isolator is connected to a transmitting antenna and a detector to realize signal transmission and monitoring; it also includes a metal body for integrating the frequency synthesizer, microwave switch, and pre-stage power amplifier; The metal body is a cuboid aluminum alloy metal body. A rectangular cavity is formed on one side of the metal body. A low-temperature co-fired ceramic substrate is mounted on the bottom surface of the cavity for integrating a frequency synthesizer, a microwave switch and a pre-amplifier on the low-temperature co-fired ceramic substrate. The bottom surface of the concave cavity is provided with several circular hole-shaped one-way heat dissipation channels that penetrate the other side of the metal body. The one-way heat dissipation channel is a one-way flow structure. The airflow direction of the one-way flow structure is away from the microwave transmitting module. The bottom of the low-temperature co-fired ceramic substrate is connected to the heat dissipation substrate through thermally conductive adhesive. The bottom of the heat dissipation substrate is connected to the top of several one-way heat dissipation channels. The one-way flow structure enables the airflow to achieve one-way flow and absorb the heat generated by the microwave transmitting module. The bottom surface of the concave cavity is provided with several columnar heat dissipation protrusions located on the outside of the low-temperature co-fired ceramic substrate, and the several heat dissipation protrusions are connected through the heat dissipation substrate to increase the contact area with air and improve the heat conduction efficiency.

2. The microwave transmitting module according to claim 1, characterized in that, The low-temperature co-fired ceramic substrate has a multilayer structure, including a top layer of radio frequency microstrip lines, an intermediate layer of ground plane, and a bottom layer of power supply filter capacitors.

3. The microwave transmitting module according to claim 1, characterized in that, Multiple strip-shaped heat dissipation channels are provided on the heat dissipation substrate. The outlet of the strip-shaped heat dissipation channel is connected to the inlet of the unidirectional heat dissipation channel to realize unidirectional gas outflow.

4. The microwave transmitting module according to claim 1, characterized in that, The heat dissipation substrate is an aluminum alloy heat dissipation plate.

5. The microwave transmitting module according to claim 1, characterized in that, The control and drive link includes: a timing control circuit, which is connected to the forward and reverse pulse drivers, the pulse power supply modulator, and the pulse driver respectively, and coordinates the timing control; The forward and reverse pulse driver receives timing control circuit and radio frequency modulated TTL signal, outputs control signal to microwave switch, and is connected to +5V voltage provided by DC / DC converter at the power supply end. The pulse power modulator is connected to the preamplifier and driver amplifier at its output. It is controlled by the timing control circuit and outputs a control signal to the preamplifier and driver amplifier. The pulse driver is also connected to the gate driver, DC / DC power supply and final stage power amplifier. It is controlled by the timing control circuit and works with the gate driver and DC / DC power supply to control the final stage power amplifier in conjunction with the power-on pulse TTL signal. The gate driver, connected to the MOS switch and DC / DC power supply, regulates the gate of the final stage power amplifier.

6. The microwave transmitting module according to claim 5, characterized in that, The power supply link includes: a DC / DC converter, which is connected to the microwave switch and the forward and reverse pulse driver to supply power to the microwave switch and the forward and reverse pulse driver; A DC / DC power supply, connected to the MOS switch and gate driver, is used to power the MOS switch and gate driver.

7. The microwave transmitting module according to claim 1, characterized in that, The isolator is a high-isolation microwave isolator device used to block reverse-reflected signals and protect the final stage power amplifier.

8. The microwave transmitting module according to claim 5, characterized in that, Both the DC / DC converter and the DC / DC power supply output are connected to a filter circuit to ensure stable power supply voltage.

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