A high-pressure high-electric-field MPCVD deposition chamber

CN224411901UActive Publication Date: 2026-06-26WUHAN CHEN GUANG GUANG TIAN TECH CO LTD
View PDF 0 Cites 0 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
WUHAN CHEN GUANG GUANG TIAN TECH CO LTD
Filing Date
2025-05-14
Publication Date
2026-06-26

AI Technical Summary

Technical Problem

The mixing method of reaction gases in traditional MPCVD equipment leads to uneven distribution of gas components, which affects the uniformity and quality of the deposited material, resulting in differences in deposition rate and poor film performance.

Method used

The design employs a spiral tube and connecting cylinder, and ensures uniform distribution of gas components within the deposition cylinder through two mixing processes. Combined with a hot water circulation system and a semiconductor cooling chip to control the temperature, it ensures stable surface temperature of the spiral tube, and uses a ceramic rod to control the substrate stage temperature.

Benefits of technology

This method achieves uniform distribution of gas components within the deposition chamber, improves the overall performance of the thin film, enhances reaction efficiency, and promotes the activation efficiency of the reactive gases, thereby improving the quality of material deposition, especially suitable for the deposition of temperature-sensitive materials.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure CN224411901U_ABST
    Figure CN224411901U_ABST
Patent Text Reader

Abstract

The utility model discloses a high pressure high electric field MPCVD deposition chamber, including depositing cylinder, depositing cylinder is cavity structure, is provided with helical tube in the cavity, and one end of helical tube is penetrated in the inside wall of depositing cylinder, and the other end of helical tube is fixed with first hose, and the top of depositing cylinder is provided with cylinder cover, and the outside wall of depositing cylinder is provided with two fixed mechanisms for fixing cylinder cover, and the top of cylinder cover is fixed with connecting cylinder, and the top of connecting cylinder is provided with gas inlet pipe, and the outside wall of gas inlet pipe is installed with first check valve. The utility model discloses the setting of connecting cylinder can carry out twice mixing treatment to reaction gas, thereby ensuring the uniform distribution of gas composition in the depositing cylinder, reducing the deposition rate uneven caused by the difference of gas concentration, improving the overall performance of the film, and the surface of helical tube is heated by hot water circulating system, ensuring the stable temperature of helical tube surface, which helps to improve the activation efficiency of reaction gas, thereby promoting the deposition of higher quality material.
Need to check novelty before this filing date? Find Prior Art