Protective layer forming equipment

Abstract

This utility model provides a protective layer forming apparatus, wherein the protective layer forming apparatus is applied to a wafer processed by a focused ion beam machine, comprising: a protective layer forming position processing unit for identifying a target region on the surface of the wafer and magnifying the target region; the target region being the area for forming the protective layer; and a protective layer forming structure including a dot-coating structure and a height-adjustable structure; the height-adjustable structure is used to finely adjust the dot-coating structure in the height direction to dot-coat the protective layer forming material of the dot-coating structure onto the target region. The technical solution provided by this utility model embodiment can improve the efficiency of the protective layer forming apparatus in forming the protective layer.

Description

Technical Field

[0001] This application relates to the field of semiconductor manufacturing technology, specifically to a protective layer forming apparatus. Background Technology

[0002] When fabricating wafers using a FIB (Focused Ion Beam) machine, a protective layer needs to be deposited on the wafer surface to protect it from damage caused by the electron beam and ion beam from the machine itself. However, directly using the machine's own electron gun to search for and deposit the protective layer on the wafer surface can cause electron beam damage to the wafer surface while searching for the target area.

[0003] Therefore, in this context, how to provide technical solutions to improve the efficiency of protective layer forming equipment in forming protective layers has become a technical problem that urgently needs to be solved by those skilled in the art. Utility Model Content

[0004] In view of this, the present invention provides a protective layer forming apparatus to improve the efficiency of the protective layer forming apparatus in forming a protective layer.

[0005] To achieve the above objectives, the present invention provides the following technical solutions.

[0006] In a first aspect, embodiments of the present invention provide a protective layer forming apparatus for wafers processed by a focused ion beam machine, the apparatus comprising:

[0007] A protective layer forming location processing unit is used to identify a target region on the surface of a wafer and magnify the target region; the target region is the area where the protective layer is formed.

[0008] The protective layer forming structure includes a dot-coating structure and a height-adjustable structure; the height-adjustable structure is used to finely adjust the dot-coating structure in the height direction to dot-coat the protective layer forming material of the dot-coating structure onto the target area.

[0009] This utility model provides a protective layer forming apparatus for wafers processed by a focused ion beam machine. The apparatus includes: a protective layer forming position processing unit for identifying a target region on the surface of the wafer and magnifying the target region; the target region is the area where a protective layer is formed; and a protective layer forming structure, including a dot-coating structure and a height-adjustable structure; the height-adjustable structure is used to finely adjust the dot-coating structure in the height direction to dot the protective layer forming material of the dot-coating structure onto the target region.

[0010] As can be seen, the technical solution provided by this utility model embodiment, in the process of forming a protective layer on the wafer surface, on the one hand, identifies and magnifies the target area through the protective layer forming position processing unit to facilitate the spot coating of the protective layer forming material in the target area; on the other hand, through the height-adjustable structure of the protective layer forming structure, the spot coating structure is controlled to move finely in the height direction, thereby enabling the spot coating structure to quickly and accurately spot coat the target area, improving the efficiency of the protective layer forming equipment in forming the protective layer, and also enabling the formation of the protective layer to have better accuracy. Attached Figure Description

[0011] To more clearly illustrate the technical solutions in the embodiments of this utility model or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.

[0012] Figure 1 This is a schematic diagram of the protective layer forming apparatus provided in an embodiment of the present invention;

[0013] Figure 2 This is another structural schematic diagram of the protective layer forming apparatus improved in this embodiment of the present invention. Detailed Implementation

[0014] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.

[0015] As mentioned in the background, when fabricating samples using a FIB (Focused Ion Beam) machine, the machine cannot be used directly to form a protective layer. Therefore, pretreatment is usually performed before the wafer is loaded into the machine to deposit a protective layer on the wafer surface.

[0016] Common methods include ink coating, adhesive coating, ALD (Atomic Layer Deposition) instrument deposition, and ion sputtering. Among these, ALD instrument deposition and ion sputtering require auxiliary equipment to form a protective layer, which is very expensive. Adhesive coating is the next cheaper method, but it takes a long time (generally requiring 30 minutes of heating time).

[0017] The marker pen dotting method for depositing a protective layer combines the advantages of low cost and high efficiency (dries in 5 seconds after dotting).

[0018] However, the method of applying ink with a marker pen has the problem that it is inconvenient to apply ink to small target areas, which affects the efficiency of the protective layer formation.

[0019] Based on this, the present invention provides a protective layer forming apparatus to improve the efficiency of protective layer forming.

[0020] Please refer to Figure 1 , Figure 1 This is a schematic diagram of a protective layer forming apparatus provided in an embodiment of the present invention. The protective layer forming apparatus is used for wafers processed by a focused ion beam machine.

[0021] like Figure 1 As shown, the protective layer forming apparatus includes:

[0022] The protective layer forming location processing unit 1 is used to identify a target region on the surface of the wafer and magnify the target region; the target region is the area where the protective layer is formed.

[0023] The protective layer forming structure 2 includes a dot-coating structure 21 and a height-adjustable structure 22; the height-adjustable structure 22 is used to finely adjust the dot-coating structure 21 in the height direction to dot-coat the protective layer forming material of the dot-coating structure 21 onto the target area.

[0024] In focused ion beam (FIB) microscopy or other high-resolution microscopy, operators typically preview the wafer to identify specific areas requiring protection. These areas may be specific structures on the wafer surface or regions requiring subsequent processing, referred to as target areas. Therefore, the protective layer formation location processing unit 1 can identify each pre-determined target area and magnify it to facilitate subsequent processing.

[0025] The dotting structure 21 of the protective layer forming structure 2 can be used to dot the protective layer forming material on the magnified target area. At the same time, the dotting structure 21 can be finely adjusted by the height-adjustable structure 22 so that the protective layer forming material of the dotting structure 21 can be accurately dotted onto the target area, thereby avoiding contamination of other areas that do not require the formation of a protective layer.

[0026] As can be seen, the technical solution provided by this utility model, in the process of forming a protective layer on the wafer surface, on the one hand, identifies and magnifies the target area through the protective layer formation position processing unit to facilitate the spot application of the protective layer forming material to the target area; on the other hand, through the height-adjustable structure of the protective layer forming structure, the spot application structure is controlled to move finely in the height direction, thereby enabling the spot application structure to quickly and accurately spot apply to the target area, improving the efficiency of the protective layer forming equipment in forming the protective layer, and also enabling the formation of the protective layer to have better accuracy.

[0027] To facilitate a stable coating environment, in one embodiment, the wafer can be fixed in place. Please refer to [link / reference needed]. Figure 1 .

[0028] like Figure 1 As shown, the protective layer forming position processing unit 1 includes:

[0029] Fixing structure 11 is used to fix the wafer;

[0030] The target area magnification structure 12 is used to identify the surface of the wafer and magnify the identified target area.

[0031] Wafer surfaces typically have very fine structures and patterns, requiring dotting at specific locations. Therefore, using a fixing structure 11 to secure the wafer ensures the accuracy of the target area being dotted, preventing positional deviations caused by wafer movement. Furthermore, during the dotting process, even minute vibrations can lead to uneven dotting or positional shifts in the target area. Therefore, fixing the wafer also reduces these vibrations, ensuring the stability of the dotting process.

[0032] The wafer can be the sample used in the aforementioned focused ion beam machine, and the protective layer formed on the target area is used to prevent the wafer from being irradiated by the electron beam and ion beam of the focused ion beam machine.

[0033] For example, the fixing structure 11 can be a vacuum chuck, which is used to fix the wafer. This method is applicable to most wafers and can provide a stable fixing effect.

[0034] The fixing structure 11 can also be a clamp, which is used to fix the wafer. The design of the clamp needs to take into account the size and shape of the wafer to ensure that it is firmly fixed without damaging the wafer.

[0035] The fixing structure 11 can also be an electrostatic adsorption structure, which fixes the wafer by electrostatic adsorption. This method is suitable for vacuum-sensitive wafers and can provide a contactless fixing method.

[0036] The fixing structure 11 can also be tape or adhesive. In some cases, tape or adhesive can be used to fix the wafer. This method is suitable for temporary fixing, but care should be taken to select appropriate tape or adhesive to avoid contamination or damage to the wafer.

[0037] In one implementation, please refer to Figure 2 , Figure 2 This is another structural schematic diagram of the protective layer forming apparatus improved in this embodiment of the present invention.

[0038] like Figure 2 As shown, the target area magnification structure 12 can be an optical microscope; the fixed structure 11 is the stage of the optical microscope; the height-adjustable structure 22 is a Z-axis height control knob; the Z-axis height control knob is used to achieve high-precision vertical movement to control the fine movement of the dot coating structure 21 in the height direction.

[0039] The Z-axis height control knob plays a crucial role in precise movement control. It not only enables high-precision vertical movement but also enhances operational flexibility and convenience. Through precise reproduction and a stable mechanical structure, it ensures repeatability and stability. Furthermore, it can adapt to various application scenarios and integrate with other control systems to further improve operational safety and reliability.

[0040] The Z-axis height control knob, as a key mechanical adjustment device, is crucial for achieving high-precision operation due to its precise control characteristics. This knob is ingeniously designed to provide extremely fine height adjustment capabilities, ensuring accurate positioning and operation in various application scenarios. Therefore, in this embodiment of the invention, the Z-axis height control knob is used as the height-adjustable structure 22 to achieve precise control of the dot-painting structure 21, enabling accurate dot-painting of the target area.

[0041] For example, the Z-axis height control knob includes:

[0042] The knob body has a first thread structure inside;

[0043] The transmission mechanism has a second threaded structure inside, which matches the first threaded structure so that the transmission mechanism is connected to the knob body and the transmission mechanism is driven to rotate by the rotation of the knob body;

[0044] The Z-axis drive shaft has one end fixed to the dot coating structure and the other end connected to the output end of the transmission structure.

[0045] The Z-axis guide rail is used to place the Z-axis drive shaft so that the Z-axis drive shaft drives the dot coating structure to move in the height direction under the rotation of the transmission mechanism within the Z-axis guide rail.

[0046] The knob body is connected to the transmission mechanism via a first internal threaded structure and a second internal threaded structure. When the knob body rotates, the transmission mechanism rotates, driving the Z-axis drive shaft up and down along the Z-axis guide rail via a threaded or gear transmission system, thereby achieving height adjustment. This design ensures the accuracy and stability of height adjustment.

[0047] In one embodiment, the dot-painting structure 21 is a fine-tipped marker, and the protective layer forming material is the ink of the fine-tipped marker.

[0048] Fine-tipped markers typically have very fine tips, enabling highly precise application. This design allows operators to accurately apply the protective coating material to the target area, avoiding accidental application or application to areas that do not require protection.

[0049] Fine-tipped markers offer numerous advantages when applying protective coatings, including high-precision positioning, detail processing capabilities, ink uniformity, operational flexibility, material compatibility, cost-effectiveness, and rapid drying.

[0050] The ink in a fine-tipped marker forms a protective layer when applied to the target area.

[0051] Optionally, the fine-tip marker includes:

[0052] pen;

[0053] The ink cartridge, located inside the pen barrel, is used to store and deliver ink;

[0054] The pen tip is used to deliver the ink from the pen core to the surface of the wafer to form a protective layer;

[0055] Ink storage structure, used to store ink.

[0056] When applying a protective layer using a fine-tipped marker, the marker's structure mainly includes the barrel, refill, tip, and ink reservoir, and may also include vents. These components work together to ensure that the ink is delivered evenly and stably to the wafer surface.

[0057] For example, the ink is one of oil-based ink, acrylic ink, water-based ink, and water-based acrylic ink.

[0058] When using fine-tipped markers to apply a protective layer, the type of ink chosen depends on the specific application requirements. If quick drying and good adhesion are needed, oil-based or acrylic ink fine-tipped markers are a good choice; if environmental friendliness and safety are more important, water-based or water-based acrylic ink fine-tipped markers are a better option.

[0059] In one embodiment, the shape of the fine-tipped marker tip includes a round tip, a flat tip, and an angled tip, wherein a round tip is suitable for target areas with a circular or curved surface, and a flat tip is suitable for target areas with a flat surface.

[0060] The appropriate pen tip shape can be selected based on the specific conditions of the wafer surface, thereby improving design flexibility.

[0061] Optionally, the area of ​​the target location is ±50 μm.

[0062] By cooperating with the protective layer formation location processing unit 1 and the protective layer formation structure 2, accurate spot coating can be achieved for a target area of ​​about 50 μm, thus improving the accuracy of protective layer spot coating.

[0063] The foregoing describes multiple embodiments of the present invention. The optional methods described in each embodiment can be combined and cross-referenced without conflict, thereby extending to a variety of possible embodiments. These can all be considered as embodiments disclosed or made public by the present invention.

[0064] While the embodiments of this utility model have been disclosed above, this utility model is not limited thereto. Any person skilled in the art can make various modifications and alterations without departing from the spirit and scope of this utility model; therefore, the scope of protection of this utility model should be determined by the scope defined in the claims.

Claims

1. A protective layer forming apparatus characterized by comprising: A wafer processed using a focused ion beam machine, the equipment comprising: A protective layer forming location processing unit is used to identify a target region on the surface of a wafer and magnify the target region; the target region is the area where the protective layer is formed. The protective layer forming structure includes a dot-coating structure and a height-adjustable structure; the height-adjustable structure is used to finely adjust the dot-coating structure in the height direction to dot-coat the protective layer forming material of the dot-coating structure onto the target area.

2. The protective layer forming apparatus according to claim 1, wherein The protective layer formation location processing unit includes: A fixing structure for fixing the wafer; The target area magnification structure is used to identify the surface of the wafer and magnify the identified target area.

3. The protective layer forming apparatus according to claim 2, wherein The target area magnification structure is an optical microscope; the fixing structure is the stage of the optical microscope; the height-adjustable structure is a Z-axis height control knob; the Z-axis height control knob is used to achieve high-precision vertical movement to control the fine movement of the dot coating structure in the height direction.

4. The protective layer forming apparatus according to claim 3, wherein The Z-axis height control knob includes: The knob body has a first thread structure inside; The transmission mechanism has a second threaded structure inside, which matches the first threaded structure so that the transmission mechanism is connected to the knob body and the transmission mechanism is driven to rotate by the rotation of the knob body; The Z-axis drive shaft has one end fixed to the dot coating structure and the other end connected to the output end of the transmission structure. The Z-axis guide rail is used to place the Z-axis drive shaft so that the Z-axis drive shaft drives the dot coating structure to move in the height direction under the rotation of the transmission mechanism within the Z-axis guide rail.

5. The protective layer forming apparatus according to claim 4, wherein The dot-painting structure is a fine-tipped marker, and the protective layer forming material is the ink of the fine-tipped marker.

6. The protective layer forming apparatus according to claim 5, wherein The fine-tip marker includes: pen; The ink cartridge, located inside the pen barrel, is used to store and deliver ink; The pen tip is used to deliver the ink from the pen core to the surface of the wafer to form a protective layer; Ink storage structure, used to store ink.

7. The protective layer forming apparatus according to claim 6, wherein The ink is one of the following: oil-based ink, acrylic ink, water-based ink, and water-based acrylic ink.

8. The protective layer forming apparatus as described in claim 7, characterized in that, The fine-tip marker has a tip shape that includes round tip, flat tip, and angled tip. Round tip is suitable for target areas with circular or curved surfaces, while flat tip is suitable for target areas with flat surfaces.

9. The protective layer forming apparatus according to any one of claims 1 to 6, wherein The area of ​​the target location is ±50um.

10. The protective layer forming apparatus according to any one of claims 1-6, characterized in that, The protective layer formed on the target area is used to prevent the wafer from being irradiated by the electron beam and ion beam of the focused ion beam machine.

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