Radio frequency front-end module and electronic device

Abstract

This application provides a radio frequency (RF) front-end module and an electronic device. The RF front-end module has a connection port for connecting to a signal port via a first inductor. The RF front-end module includes a substrate, a low-noise amplifier (LNA), and a microstrip line. The substrate has the connection port, and the LNA is mounted on the substrate. The LNA includes an input port. The microstrip line is mounted on the substrate, with a first end connected to the connection port and a second end connected to the input port of the LNA. The microstrip line has a characteristic impedance greater than 50 ohms. By connecting a microstrip line with a characteristic impedance greater than 50 ohms in series between the input port of the LNA and the connection port of the RF front-end module, the real part of the input impedance of the input port can be increased, improving the matching performance and thus increasing the gain of the LNA.

Description

Technical Field

[0001] This application relates to the field of radio frequency technology, and in particular to a radio frequency front-end module and electronic device. Background Technology

[0002] With the rapid development of new-generation information technology, technologies in various sub-fields are constantly being updated and improved, placing higher demands on the performance indicators of radio frequency (RF) front-end modules. RF front-end modules include low-noise amplifiers (LNAs), whose input ports are connected to the connection ports on the RF front-end module substrate. In related RF front-end modules, the input impedance at the LNA's input port is often too low, which can cause the LNA's gain to fail to meet practical requirements. Summary of the Invention

[0003] This application provides an RF front-end module and electronic device that can improve the gain of a low-noise amplifier.

[0004] In a first aspect, embodiments of this application provide a radio frequency (RF) front-end module, wherein the connection port of the RF front-end module is used to connect to a signal port via a first inductor, and the RF front-end module includes:

[0005] A substrate, wherein the connection port is provided on the substrate;

[0006] A low-noise amplifier, the low-noise amplifier being disposed on the substrate, the low-noise amplifier including an input port;

[0007] A microstrip line is disposed on the substrate, with a first end of the microstrip line connected to the connection port and a second end of the microstrip line connected to the input port of the low-noise amplifier.

[0008] The microstrip line is a microstrip line with a characteristic impedance greater than 50 ohms.

[0009] Secondly, embodiments of this application provide a radio frequency front-end module, the radio frequency front-end module comprising:

[0010] A substrate, wherein a connection port is provided on the substrate;

[0011] A low-noise amplifier, the low-noise amplifier being disposed on the substrate, the low-noise amplifier including an input port;

[0012] A microstrip line is disposed on the substrate, with a first end of the microstrip line connected to the connection port and a second end of the microstrip line connected to the input port of the low-noise amplifier.

[0013] The ratio of the linewidth of the microstrip line to the distance between the microstrip line and the ground layer of the substrate is less than 0.5.

[0014] Thirdly, embodiments of this application provide a radio frequency front-end module, the radio frequency front-end module comprising:

[0015] A substrate, wherein a connection port is provided on the substrate;

[0016] A low-noise amplifier, the low-noise amplifier being disposed on the substrate, the low-noise amplifier including an input port;

[0017] The adjustment unit includes a microstrip line and a second inductor connected in series between the connection port and the input port of the low-noise amplifier;

[0018] The microstrip line is disposed on the substrate.

[0019] Fourthly, embodiments of this application provide a radio frequency front-end module, the radio frequency front-end module comprising:

[0020] A substrate, wherein a connection port is provided on the substrate;

[0021] A low-noise amplifier, the low-noise amplifier being disposed on the substrate, the low-noise amplifier including an input port;

[0022] An adjustment unit, comprising a microstrip line and a third inductor and / or a fourth inductor, wherein the third inductor grounds a first end of the microstrip line and the fourth inductor grounds a second end of the microstrip line;

[0023] The microstrip line is disposed on the substrate.

[0024] Fifthly, embodiments of this application provide an electronic device, which includes the aforementioned radio frequency front-end module.

[0025] The radio frequency (RF) front-end module and electronic device provided in this application embodiment have a connection port for connecting to a signal port via a first inductor. The RF front-end module includes a substrate, a low-noise amplifier, and a microstrip line. The connection port is provided on the substrate. The low-noise amplifier is disposed on the substrate and includes an input port. The microstrip line is disposed on the substrate. A first end of the microstrip line is connected to the connection port, and a second end of the microstrip line is connected to the input port of the low-noise amplifier. The microstrip line is a microstrip line with a characteristic impedance greater than 50 ohms. By connecting a microstrip line with a characteristic impedance greater than 50 ohms in series between the input port of the low-noise amplifier and the connection port of the RF front-end module, the real impedance of the connection port of the RF front-end module can be increased, improving the matching performance. This connection port is connected to the input port of the low-noise amplifier, thereby increasing the gain of the low-noise amplifier. Furthermore, when the real impedance of the connection port (point B) in the RF front-end module meets the actual requirements (e.g., high gain requirements), the impedance matching of the low-noise amplifier under different operating frequency bands can be achieved by flexibly adjusting the value of the first inductor set outside the substrate, thus achieving a lower-cost, wide-band impedance matching requirement.

[0026] It should be understood that the above general description and the following detailed description are exemplary and explanatory only, and do not limit the disclosure of the embodiments of this application. Attached Figure Description

[0027] To more clearly illustrate the technical solutions of the embodiments of this application, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0028] Figure 1 This is a schematic block diagram of a radio frequency front-end module provided in an embodiment of this application;

[0029] Figure 2 The image shown is a schematic diagram of the Smith chart without microstrip lines.

[0030] Figure 3 This is a schematic diagram of the Smith chart when the characteristic impedance of a microstrip line is less than or equal to 50 ohms.

[0031] Figures 4a to 4c This is a schematic diagram of the Smith chart corresponding to the radio frequency front-end module in some embodiments of this application;

[0032] Figure 4d and Figure 4e This is a schematic diagram of the S-parameters of low-noise amplifiers corresponding to microstrip lines with different characteristic impedances.

[0033] Figure 5 This is a schematic diagram of a low-noise amplifier in some embodiments of this application;

[0034] Figures 6a to 6c These are schematic diagrams of microstrip lines in some embodiments of this application;

[0035] Figures 7a to 13 These are schematic block diagrams and Smith charts of the radio frequency front-end module in some embodiments of this application;

[0036] Figure 14 This is a schematic block diagram of an electronic device provided in an embodiment of this application;

[0037] Figure 15 This is a schematic block diagram of an electronic device according to one embodiment of this application.

[0038] Explanation of reference numerals in the attached figures:

[0039] 10. RF front-end module; 11. Substrate; 111. First metal layer; 112. Ground layer; 113. Middle metal layer; 1131. Cutout area; 114. Top metal layer; 115. Bottom metal layer; 101. Connection port; 12. Low noise amplifier; 102. Input port; 121. Amplifying transistor; 122. Source inductor; 13. Adjustment unit; S1. Microstrip line;

[0040] L1, First inductor; L2, Second inductor; L21, First sub-inductor; L22, Second sub-inductor; L3, Third inductor; L4, Fourth inductor; 201, Signal port. Detailed Implementation

[0041] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0042] It should be understood that this application can be implemented in various forms and should not be construed as being limited to the embodiments set forth herein. Rather, providing these embodiments will make the disclosure thorough and complete, and will fully convey the scope of this application to those skilled in the art. In the drawings, for clarity, the dimensions of layers and regions, as well as their relative dimensions, may be exaggerated. The same reference numerals denote the same elements throughout.

[0043] To fully understand this application, detailed structures and steps will be presented in the following description to illustrate the technical solutions proposed in this application. Preferred embodiments of this application are described in detail below; however, in addition to these detailed descriptions, this application may have other implementation methods.

[0044] The following detailed description of some embodiments of this application is provided in conjunction with the accompanying drawings. Unless otherwise specified, the following embodiments and features can be combined with each other.

[0045] Please see Figure 1 , Figure 1 This is a schematic block diagram of a radio frequency front-end module 10 provided in an embodiment of this application.

[0046] like Figure 1 As shown, the RF front-end module 10 includes: a substrate 11, a low-noise amplifier 12, and a microstrip line S1.

[0047] The RF front-end module 10 has a connection port 101 on its substrate 11, which is used to connect to the signal port 201 through the first inductor L1.

[0048] In one specific embodiment, signal port 201 is used to transmit radio frequency (RF) signals. For example, signal port 201 can transmit RF signals to connection port 101 of RF front-end module 10 via first inductor L1. Alternatively, signal port 201 can be used to detect the impedance of input port 102 of low-noise amplifier 12.

[0049] In at least one embodiment, a low-noise amplifier 12 is disposed on a substrate 11, and the low-noise amplifier 12 includes an input port 102. A microstrip line S1 is disposed on the substrate 11, with a first end of the microstrip line S1 connected to a connection port 101 and a second end of the microstrip line S1 connected to the input port 102 of the low-noise amplifier 12. Radio frequency signals transmitted to the connection port 101 are transmitted to the input port 102 of the low-noise amplifier 12 via the microstrip line S1, and the low-noise amplifier 12 amplifies the radio frequency signals input from the input port 102.

[0050] Specifically, in the embodiments of this application, the microstrip line S1 is a microstrip line with a characteristic impedance greater than 50 ohms.

[0051] Figures 2 to 4bThe diagram shows the Smith chart corresponding to the impedance matching network between signal port 201 and input port 102 of low-noise amplifier 12. Point A is the input port 102 of low-noise amplifier 12, and the impedance at point A is the input impedance of low-noise amplifier 12; point B is the connection port 101 of RF front-end module 10, and the impedance at point B is the input impedance of connection port 101; point E is signal port 201, and the impedance at point E is the input impedance of signal port 201.

[0052] like Figure 2 The figure shown is a Smith chart of the low-noise amplifier 12 with only a first inductor L1 connected between the input port 102 and the signal port 201 and without a microstrip line S1. The first inductor L1 connected in series between the input port 102 and the signal port 201 mainly changes the imaginary impedance. For example, based on different operating frequency band requirements, the inductance value of the first inductor L1 can be flexibly adjusted to meet the impedance matching requirements under different operating frequency bands, achieving wideband adjustable matching. Points A and E are mainly different in terms of imaginary impedance. The first inductor L1 does not change the real impedance, and the real impedances of points A and E are the same. Taking the real impedance of point A as 20 ohms as an example, the real impedance of point E is also 20 ohms. However, under normal circumstances, based on the current packaging technology level and actual design requirements, there will inevitably be a microstrip line between the input port 102 and the connection port 101. This microstrip line is usually a microstrip line with a characteristic impedance of 50 ohms. Therefore, the real impedance of the connection port 101 of the RF front-end module 10 will be low, which will cause the gain of the low noise amplifier 12 to fail to meet the actual requirements.

[0053] like Figure 3 The figure shows the Smith chart with a microstrip line of 50 ohms characteristic impedance connected in series between the input port 102 of the low-noise amplifier 12 and the connection port 101 of the RF front-end module 10. After connecting the microstrip line of 50 ohms characteristic impedance, the real impedance at point B and the real impedance at point E are significantly lower than the real impedance at point A. For example, the real impedance at point B and the real impedance at point E become as low as about 10 ohms. As a result, after impedance matching through the impedance matching network between the signal port 201 and the input port 102, the real impedance at the connection port 101 of the RF front-end module 10 is too low, which in turn causes the gain of the low-noise amplifier 12 to fail to meet the actual requirements.

[0054] Figure 4a and Figure 4b The figure shown is a Smith chart when a microstrip line with a characteristic impedance greater than 50 ohms is connected in series between connection port 101 and input port 102 of low-noise amplifier 12.

[0055] like Figure 4aAs shown, taking a microstrip line S1 with a characteristic impedance of 75 ohms as an example, with a real impedance of 20 ohms at point A, by connecting a microstrip line S1 with a characteristic impedance of 75 ohms in series between the input port 102 of the low-noise amplifier 12 and the connection port 101 of the RF front-end module 10, the real impedance at point B and point E can be made to be 13 ohms. Compared to the real impedance at point B and point E being approximately 10 ohms when a microstrip line with a characteristic impedance of 50 ohms is connected in series, this is approximately 10 ohms. Connecting a microstrip line S1 with a characteristic impedance of 75 ohms in series can increase the real impedance of the connection port 101 (point B) of the RF front-end module 10, thereby increasing the gain of the low-noise amplifier 12. When the real impedance of the connection port 101 (point B) in the RF front-end module 10 meets the actual requirements (e.g., high gain requirements), the value of the first inductor L1 set outside the substrate 11 can be flexibly adjusted to enable the low-noise amplifier 12 to meet the impedance matching requirements of different operating frequency bands, achieving lower cost broadband impedance matching requirements.

[0056] like Figure 4b As shown, taking a microstrip line S1 with a characteristic impedance of 100 ohms and a real impedance of 20 ohms at point A as an example, by connecting a microstrip line S1 with a characteristic impedance of 100 ohms in series between the input port 102 of the low-noise amplifier 12 and the connection port 101 of the RF front-end module 10, the real impedance of point B and the real impedance of point E can be made to be 15 ohms. Compared with the real impedance of point B and the real impedance of point E being about 10 ohms when a microstrip line with a characteristic impedance of 50 ohms is connected in series, connecting a microstrip line S1 with a characteristic impedance of 100 ohms can further increase the real impedance of the connection port 101 (point B) of the RF front-end module 10, thereby further increasing the gain of the low-noise amplifier 12.

[0057] Please see Figure 4c The microstrip line S1 with different characteristic impedances corresponds to different rotation directions on the Smith chart. The higher the characteristic impedance of microstrip line S1, the steeper the rotation direction on the Smith chart, moving towards higher real impedance (the right side of the Smith chart). The decrease in real impedance at point B is smaller compared to that at point A. Please refer to... Figure 4c See Figure 4a or Figure 4b By setting the microstrip line S1 to a microstrip line with a characteristic impedance greater than 50 ohms, the real impedance of the connection port 101 of the RF front-end module 10 can be increased, the matching performance can be improved, and the gain of the low-noise amplifier 12 can be increased.

[0058] Compared to Figure 3A 50-ohm microstrip line S1 connected in series. Figure 4a Connecting a 75-ohm microstrip line S1 in series allows for a larger and steeper rotation of S1 on the Smith chart, increasing the real impedance at points B and E to 13 ohms. This increases the real impedance of the input port 102, thereby increasing the gain of the low-noise amplifier 12. Compared to Figure 3 A 50-ohm microstrip line S1 connected in series. Figure 4b The series connection of a 100-ohm microstrip line S1 allows the microstrip line S1 to rotate more and steeper on the Smith chart, increasing the real impedance at points B and E to 15 ohms. This further increases the real impedance of the input port 102, thereby increasing the gain of the low-noise amplifier 12 and reducing the input return loss of the noise amplifier 12.

[0059] In at least one embodiment, as the characteristic impedance of the microstrip line S1 increases, connecting a microstrip line S1 with a large characteristic impedance in series between the input port 102 of the low-noise amplifier 12 and the connection port 101 of the RF front-end module 10 can make the real impedance of the connection port 101 of the RF front-end module 10 greater than the real impedance of the input port 102 of the low-noise amplifier 12. For example, if the real impedance of the input port 102 of the low-noise amplifier 12 is 20 ohms, connecting a microstrip line S1 with a large characteristic impedance (e.g., a microstrip line with a characteristic impedance greater than 120 ohms) in series between the input port 102 of the low-noise amplifier 12 and the connection port 101 of the RF front-end module 10 may result in an impedance greater than 20 ohms. That is, the real impedance of the connection port 101 of the RF front-end module 10 may be greater than the real impedance of the input port 102 of the low-noise amplifier 12.

[0060] In related technologies, if the connection line between the input port 102 of the low-noise amplifier 12 and the connection port 101 of the substrate 11 is a microstrip line with a characteristic impedance of 50 ohms, the difference between the real impedance of the input port 102 of the low-noise amplifier 12 and the real impedance of the connection port 101 of the substrate 11 is usually greater than 10 ohms. This results in the real impedance of the connection port 101 of the RF front-end module 10 being too low, affecting the gain and return loss performance of the low-noise amplifier. In this embodiment, a microstrip line with a characteristic impedance greater than 50 ohms is connected between the input port 102 of the low-noise amplifier 12 and the connection port 101 of the substrate 11, and the microstrip line S1 is configured such that the difference between the real impedance of the connection port 101 and the real impedance of the input port 102 of the low-noise amplifier 12 is less than 10 ohms. For example, if the real impedance of the input port 102 of the low-noise amplifier 12 is 20 ohms, then the real impedance of the connection port 101 is greater than or equal to 11 ohms. For instance, by setting the microstrip line S1 to have a characteristic impedance greater than or equal to 75 ohms, the real impedance of the connection port 101 can be made greater than or equal to 13 ohms. By setting the microstrip line S1 to have a characteristic impedance greater than or equal to 100 ohms, the real impedance of the connection port 101 can be made greater than or equal to 15 ohms. This reduces the real impedance of the connection port 101 on the substrate 11 compared to the real impedance of the input port 102 (point A) of the low-noise amplifier 12. The small amplitude ensures that the real impedance of the connection port 101 of the RF front-end module 10 meets the actual requirements, avoiding the low gain of the low noise amplifier 12 due to the low real impedance of the connection port 101 of the RF front-end module 10 being too low, thereby improving the matching performance and increasing the gain of the low noise amplifier 12. Furthermore, when the real impedance of the connection port 101 (point B) of the RF front-end module 10 meets the high gain performance, the low noise amplifier 12 can meet the impedance matching requirements under different operating frequency bands simply by flexibly adjusting the value of the first inductor L1 set outside the substrate 11, thus achieving lower cost broadband impedance matching.

[0061] like Figure 4d and Figure 4eThe diagram shows a comparison of the S-parameters of a microstrip line S1 with a series characteristic impedance of 100 ohms between the input port 102 of the low-noise amplifier and the connection port 101 of the substrate 11, and a microstrip line with a series characteristic impedance of 50 ohms between the input port 102 and the connection port 101 of the substrate 11. The connection port 101 is connected to the signal port 201 via a first inductor L1. It can be determined that, compared to a microstrip line with a series characteristic impedance of 50 ohms, the microstrip line S1 with a series characteristic impedance greater than 50 ohms (e.g., 100 ohms) between the input port 102 and the connection port 101 of the substrate 11 in this embodiment can at least reduce the input return loss of the low-noise amplifier 12 and increase the gain of the low-noise amplifier 12 within its operating frequency band.

[0062] In some implementations, when the characteristic impedance of the microstrip line S1 is sufficiently large, the microstrip line S1 is configured such that the real impedance of the connection port 101 is greater than the real impedance of the input port 102 of the low-noise amplifier 12. For example, the microstrip line S1 is configured such that the difference between the real impedance of the connection port 101 and the real impedance of the input port 102 of the low-noise amplifier 12 is less than 10 ohms, and the configuration of the microstrip line S1 such that the real impedance of the connection port 101 is greater than the real impedance of the input port 102 of the low-noise amplifier 12 can increase the real impedance of the connection port 101 of the RF front-end module 10, improve matching performance, and thereby increase the gain of the low-noise amplifier 12 and reduce the input return loss of the low-noise amplifier 12.

[0063] In some embodiments, a preferred application scenario for this application is that the length of the microstrip line S1 is greater than 50 micrometers. A longer microstrip line S1 results in a greater decrease in the real impedance at points B and E compared to the real impedance at point A, leading to a lower real impedance at the connection port 101 of the RF front-end module 10. This embodiment of the application can prevent this excessive decrease in the real impedance at points B and E compared to the real impedance at point A by setting the characteristic impedance of the microstrip line S1 to be greater than 50 ohms. This ensures a higher real impedance at the connection port 101 of the RF front-end module 10, thereby increasing the gain of the low-noise amplifier 12 and reducing the input return loss of the noise amplifier 12. It is understood that the longer the microstrip line S1, the greater the decrease in the real impedance at points B and E compared to the real impedance at point A. Therefore, a microstrip line S1 with a larger characteristic impedance is required to ensure that the real impedance at the connection port 101 of the RF front-end module 10 is not too low, thus meeting the high gain requirement of the noise amplifier 12.

[0064] In some implementations, the linewidth of the microstrip line is less than or equal to 40 micrometers. Further, the linewidth of the microstrip line S1 is in the range of [10 micrometers, 30 micrometers]. By reducing the linewidth of the microstrip line S1, the characteristic impedance of the microstrip line S1 can be increased, for example, making the characteristic impedance of the microstrip line S1 greater than 50 ohms or even greater than 70 ohms. This can increase the real part of the input impedance of the input port 102 of the low-noise amplifier 12, improve matching performance, and thus increase the gain of the low-noise amplifier 12.

[0065] For example, the ratio of the linewidth of microstrip line S1 to the distance between microstrip line S1 and the ground layer 112 of substrate 11 is less than 0.5. This enables the characteristic impedance of microstrip line S1 to be greater than 50 ohms.

[0066] Furthermore, the ratio of the linewidth of the microstrip line S1 to the distance between the microstrip line S1 and the ground layer 112 of the substrate 11 is less than 0.3 or less than 0.2. This can further increase the characteristic impedance of the microstrip line S1, for example, making the characteristic impedance of the microstrip line S1 greater than 70 ohms.

[0067] Furthermore, the ratio of the linewidth of microstrip line S1 to the distance between microstrip line S1 and the ground layer 112 of substrate 11 is in the range of [0.1, 0.3], or the ratio of the linewidth of microstrip line S1 to the distance between microstrip line S1 and the ground layer 112 of substrate 11 is in the range of [0.2, 0.5]. This can further increase the characteristic impedance of the microstrip line S1.

[0068] As an example, in at least one embodiment, the linewidth of the microstrip line S1 is less than or equal to 30 micrometers, and the distance between the first metal layer and the ground layer of the substrate is greater than or equal to 100 micrometers. In this case, the ratio of the linewidth of the strip line S1 to the distance between the microstrip line S1 and the ground layer 112 of the substrate 11 is less than 0.3.

[0069] For example, the distance between the microstrip line S1 and the ground layer 112 of the substrate 11 is greater than or equal to 100 micrometers. For instance, the microstrip line S1 is disposed on a first metal layer of the substrate 11, and the distance between the first metal layer and the ground layer 112 of the substrate 11 is greater than or equal to 100 micrometers. Further, the distance between the first metal layer and the ground layer 112 of the substrate 11 is in the range of [100 micrometers, 300 micrometers], or the distance between the first metal layer and the ground layer 112 of the substrate 11 is in the range of [200 micrometers, 400 micrometers]; this enables the characteristic impedance of the microstrip line S1 to be greater than 50 ohms.

[0070] For example, if the length of microstrip line S1 is greater than 200 micrometers, then microstrip line S1 is a microstrip line with a characteristic impedance greater than or equal to 70 ohms. When the length of microstrip line S1 is large, by increasing the characteristic impedance of microstrip line S1, it is possible to prevent the real impedance at point B and the real impedance at point E from decreasing too much compared with the real impedance at point A due to the excessive length of microstrip line S1. This ensures that the real impedance of the connection port 101 of the RF front-end module 10 is large, which in turn increases the gain of the low-noise amplifier 12 and reduces the input return loss of the noise amplifier 12.

[0071] For example, if the length of microstrip line S1 is greater than 200 micrometers, the ratio of the linewidth of microstrip line S1 to the distance between microstrip line S1 and the ground layer 112 of substrate 11 is less than 0.3. This allows the characteristic impedance of microstrip line S1 to be greater than 50 ohms. When the length of microstrip line S1 is large, reducing the ratio of the linewidth of microstrip line S1 to the distance between microstrip line S1 and ground layer 112 can increase the characteristic impedance of microstrip line S1. This prevents the real impedance at point B and the real impedance at point E from decreasing too much compared to the real impedance at point A due to the excessive length of microstrip line S1. This ensures that the real impedance of the connection port 101 of RF front-end module 10 is large, thereby increasing the gain of low-noise amplifier 12 and reducing the input return loss of noise amplifier 12.

[0072] In at least one embodiment, the ratio of the linewidth of microstrip line S1 to the distance between microstrip line S1 and ground layer 112 can be changed by adjusting the linewidth of microstrip line S1 and / or adjusting the distance between microstrip line S1 and ground layer 112, so that the ratio of the linewidth of microstrip line S1 to the distance between microstrip line S1 and ground layer 112 of substrate 11 is less than 0.3. This ensures that the real impedance of connection port 101 (point B) and signal port E of substrate 11 will not be too low when the length of microstrip line S1 is greater than 200 micrometers.

[0073] In some embodiments, the real impedance of the connection port 101 on the substrate 11 is in the range of [10 ohms, 40 ohms]. Further, the real impedance of the connection port 101 on the substrate 11 is in the range of [20 ohms, 40 ohms], [10 ohms, 30 ohms], or [30 ohms, 40 ohms]. For example, the real impedance of the connection port 101 is 13 ohms, 15 ohms, 17 ohms, or 25 ohms.

[0074] In some implementations, such as Figure 5As shown, the low-noise amplifier 12 includes an amplifying transistor 121 and a source inductor 122. The source of the transistor is grounded through the source inductor 122. The source inductor 122 can optimize noise performance and impedance matching. For example, the source inductor 122 can introduce local current-voltage negative feedback, which can improve the linearity and stability of the low-noise amplifier 12. For example, at the operating frequency, the source inductor 122 and the gate-source parasitic capacitance of the amplifying transistor 121 can resonate, adjusting the input impedance to close to 50 ohms and reducing reflection loss.

[0075] In some embodiments, the amplifying transistor 121 is a field-effect transistor (MOS). The gate of the amplifying transistor 121 is connected to the input port of the low-noise amplifier chip, the source of the amplifying transistor 121 is grounded through the source inductor 122, and the drain of the amplifying transistor 121 is connected to the output terminal or the input terminal of the next stage amplifying transistor.

[0076] The amplifying transistor 121 can be one of an N-channel field-effect transistor, a P-channel field-effect transistor, a PNP transistor, or an NPN transistor.

[0077] In some implementations, the inductance value of the source inductor 122 is less than or equal to 1.2 nH (nanohenry). Further, the inductance value of the source inductor 122 is less than or equal to 0.8 nH (nanohenry). Due to the influence of the gate-source parasitic capacitance of the amplifying transistor 121 in the low-noise amplifier 12, the input impedance of the input port 102 of the low-noise amplifier 12 is capacitive. By setting the inductance value of the source inductor 122 to be less than or equal to 1.2 nH, the low-noise amplifier 12 can achieve high-gain performance. For example, when the gain of the low-noise amplifier 12 is greater than or equal to 16 dBm (milliwatts), the inductance value of the source inductor 122 is in the range of [0.4 nH, 1.2 nH]. Further, the inductance value of the source inductor 122 is in the range of [0.4 nH, 0.8 nH]. For example, the inductance value of the source inductor 122 is 0.8 nH.

[0078] However, neglecting the Miller effect, according to the simplified formula Re = gm × LS ÷ Cgs, where Re represents the real impedance of the input impedance of the low-noise amplifier 12, gm represents the transconductance of the amplifying transistor 121, LS represents the inductance of the source inductor 122, and Cgs represents the gate-source parasitic capacitance of the amplifying transistor 121, it can be determined that an inductance of the source inductor 122 less than or equal to 1.2nH will result in a real impedance of the input port 102 of the low-noise amplifier 12 being less than 50 ohms. For example, the real impedance of the input port 102 of the low-noise amplifier 12 is 20 ohms. For instance, the ratio of the gate-source parasitic capacitance of the amplifying transistor 121 to the inductance of the source inductor 122 is less than 0.4, resulting in a smaller real impedance of the input port 102 of the low-noise amplifier 12, which in turn results in a smaller real impedance of the connection port 101 of the RF front-end module 10. For example, the gate-source parasitic capacitance of the amplifying transistor 121 is in the range of [100pF, 300pF], such as 200pF. This also results in a smaller real impedance at the input port 102 of the noise amplifier 12, and consequently a smaller real impedance at the connection port 101 of the RF front-end module 10. In this embodiment, by setting the characteristic impedance of the microstrip line S1 to be greater than 50 ohms, the real impedance of the connection port 101 of the RF front-end module 10 can be increased, improving matching performance, thereby increasing the gain of the low-noise amplifier 12 and reducing the input return loss of the noise amplifier 12.

[0079] In some implementations, such as Figure 6aAs shown, the substrate 11 includes a first metal layer 111. The first metal layer 111 can be the top metal layer 114 of the substrate 11, or it can be a second metal layer located adjacent to and below the top metal layer 114, but it is not limited to these. The microstrip line S1 is disposed on the first metal layer 111. At least one intermediate metal layer 113 is also included between the first metal layer 111 and the ground layer 112 of the substrate 11. The area on which the microstrip line S1 is projected onto the at least one intermediate metal layer 113 is a cut-out area 1131. For example, by setting a hollowed-out region 1131 in the metal layer below the microstrip line S1, the parasitic capacitance of the microstrip line S1 can be reduced, thereby increasing the characteristic impedance of the microstrip line S1. For example, the characteristic impedance of the microstrip line S1 can be made greater than 50 ohms or even greater than 70 ohms, thereby increasing the real impedance of the connection port 101 of the RF front-end module 10, improving the matching performance, and thus increasing the gain of the low-noise amplifier 12 and reducing the input return loss of the noise amplifier 12. Moreover, when the real impedance of the connection port 101 (point B) in the RF front-end module 10 meets the actual requirements (e.g., high gain requirements), the value of the first inductor L1 set outside the substrate 11 can be flexibly adjusted to enable the low-noise amplifier 12 to meet the impedance matching requirements of different operating frequency bands, achieving lower cost broadband impedance matching requirements.

[0080] In some embodiments, the substrate 11 includes a first metal layer 111, and a microstrip line S1 is disposed on the first metal layer 111. The distance between the first metal layer 111 and the ground layer 112 of the substrate 11 is greater than or equal to 100 micrometers. By increasing the distance between the microstrip line S1 and the ground layer 112, the parasitic capacitance of the microstrip line S1 can be reduced, thereby increasing the characteristic impedance of the microstrip line S1. For example, the characteristic impedance of the microstrip line S1 can be made greater than 50 ohms or even greater than 70 ohms. This can increase the real impedance of the connection port 101 of the RF front-end module 10, improve the matching performance, and further increase the gain of the low-noise amplifier 12 and reduce the input return loss of the noise amplifier 12.

[0081] In some implementations, such as Figure 6b or Figure 6c As shown, the substrate 11 has a top metal layer 114 and a bottom metal layer 115, and a plurality of metal layers are further included between the top metal layer 114 and the bottom metal layer 115. These multiple metal layers are spaced apart along a direction extending from the top metal layer 114 to the bottom metal layer 115. Figure 6b As shown, the microstrip line S1 is formed on the top metal layer 114 of the substrate 11, or, as... Figure 6cAs shown, the distance between the metal layer forming the microstrip line S1 and the top metal layer 114 of the substrate 11 is smaller than the distance between the metal layer forming the microstrip line S1 and the bottom metal layer 115 of the substrate 11. By increasing the distance between the microstrip line S1 and the bottom metal layer 115, the parasitic capacitance of the microstrip line S1 can be reduced, thereby increasing the characteristic impedance of the microstrip line S1. For example, the characteristic impedance of the microstrip line S1 can be made greater than 50 ohms or even greater than 70 ohms. This can increase the real impedance of the connection port 101 of the RF front-end module 10, improve the matching performance, and further increase the gain of the low-noise amplifier 12 and reduce the input return loss of the noise amplifier 12.

[0082] For example, the bottom metal layer 115 of the substrate 11 is a ground layer 112; by increasing the distance between the microstrip line S1 and the ground layer 112, the parasitic capacitance of the microstrip line S1 can be reduced, thereby increasing the characteristic impedance of the microstrip line S1, thereby increasing the real impedance of the connection port 101 of the RF front-end module 10, improving the matching performance, and thus increasing the gain of the low-noise amplifier 12 and reducing the input return loss of the noise amplifier 12.

[0083] In some implementations, such as Figures 7a to 7c As shown, the RF front-end module 10 also includes a second inductor L2, and the second inductor L2 and the microstrip line S1 are connected in series between the connection port 101 and the input port 102 of the low noise amplifier 12.

[0084] like Figure 7a As shown, the first end of the microstrip line S1 is connected to the connection port 101 through the second inductor L2; or, as... Figure 7b The second end of the microstrip line S1 shown is connected to the input port 102 of the low-noise amplifier 12 via the second inductor L2; or, as shown... Figure 7c The second inductor L2 shown includes a first sub-inductor L21 and a second sub-inductor L22. The first end of the microstrip line S1 is connected to the connection port 101 through the first sub-inductor L21, and the second end of the microstrip line S1 is connected to the input port 102 of the low-noise amplifier 12 through the second sub-inductor L22. This allows the second inductor L2 and the microstrip line S1 to be connected in series between the connection port 101 and the input port 102 of the low-noise amplifier 12.

[0085] For example, the second inductor L2 includes one or more of the following: metal trace inductor, surface mount device (SMD) inductor, and bonding wire.

[0086] For example, substrate 11 includes a metal layer, and the second inductor L2 is wound around the metal layer of substrate 11 via metal traces. Optionally, the metal layer forming the metal trace inductor and the metal layer forming the microstrip line S1 can be the same metal layer or different metal layers.

[0087] Taking the second end of the microstrip line S1 connected to the input port 102 of the low-noise amplifier 12 via the second inductor L2 as an example, please refer to... Figure 7d By connecting the second inductor L2 in series with the microstrip line S1 between the connection port 101 and the input port 102 of the low-noise amplifier 12, the real impedance of points B and E can reach 15 ohms. Compared to the real impedance of points B and E being around 10 ohms when a microstrip line with a characteristic impedance of 50 ohms is connected in series and the second inductor L2 is not connected in series, connecting the second inductor L2 in series can increase the real impedance of the connection port 101 of the RF front-end module 10, improve the matching performance, and thus increase the gain of the low-noise amplifier 12 and reduce the input return loss of the low-noise amplifier 12.

[0088] For example, when the second inductor L2 and the microstrip line S1 are connected in series between the connection port 101 and the input port 102 of the low-noise amplifier 12, the inductance value of the first inductor L1 can be less than or equal to 10 nanohenries. When the RF front-end module 10 also includes the second inductor L2, the real impedance of the connection port 101 of the RF front-end module 10 can be increased, and the imaginary impedance of the connection port 101 can be decreased, thereby enabling impedance matching using a smaller inductance value of the first inductor L1. For example, when the second inductor L2 and the microstrip line S1 are connected in series between the connection port 101 and the input port 102 of the low-noise amplifier 12, and the characteristic impedance of the microstrip line S1 is greater than 70 ohms, such as when the characteristic impedance of the microstrip line S1 is 75 ohms, the real part of the input impedance of the input port 102 can be 17 ohms, and the imaginary part of the input impedance of the input port 102 can be 0. In this case, the first inductor L1 can use a component with a smaller inductance value, such as a 0-ohm resistor.

[0089] Please see Figure 8a and Figure 8b The second inductor L2 is connected in series with the microstrip line S1 between the connection port 101 and the input port 102 of the low-noise amplifier 12, and the characteristic impedance of the microstrip line S1 is greater than 70 ohms. If the first inductor L1 is a 0-ohm resistor, or if no inductor is connected between the connection port 101 and the signal port 201 of the RF front-end module 10 but instead connected directly through traces or bonding wires, point C represents the connection port 101 or the signal port 201; according to Figure 8bThe Smith chart shown indicates that the second inductor L2 and the microstrip line S1 can increase the real impedance of the connection port 101 of the RF front-end module 10, improve the matching performance, and thus increase the gain of the low-noise amplifier 12 and reduce the input return loss of the noise amplifier 12.

[0090] In some implementations, such as Figure 9a The RF front-end module 10 shown also includes a third inductor L3, and the first end of the microstrip line S1 is grounded through the third inductor L3. Or as... Figure 9b The RF front-end module 10 shown also includes a fourth inductor L4, and the second end of the microstrip line S1 is grounded through the fourth inductor L4. Or as... Figure 9c The RF front-end module 10 shown also includes a third inductor L3 and a fourth inductor L4. The first end of the microstrip line S1 is grounded through the third inductor L3 and the second end of the microstrip line S1 is grounded through the fourth inductor L4.

[0091] Optionally, the third inductor L3 may include one or more of the following: a metal trace inductor, a surface mount inductor, or a bonding wire. Optionally, the third inductor L3 may be wound around the metal layer of the substrate 11 via metal traces.

[0092] Please combine Figure 9a See Figure 9d By grounding the first end of the microstrip line S1 through the third inductor L3, the real impedance of points B and E can reach 25 ohms. Compared to the real impedance of points B and E being around 10 ohms when a microstrip line with a characteristic impedance of 50 ohms is connected in series and the third inductor L3 is not set, the real impedance of the connection port 101 of the RF front-end module 10 can be increased by setting the third inductor L3, thereby improving the matching performance, which can increase the gain of the low-noise amplifier 12 and reduce the input return loss of the noise amplifier 12.

[0093] For example, when the first end of the microstrip line S1 is grounded through the third inductor L3 and / or the second end of the microstrip line S1 is grounded through the fourth inductor L4, the inductance value of the first inductor L1 can be less than or equal to 10 nanohenries. When the RF front-end module 10 also includes the third inductor L3 and / or the fourth inductor L4, the real impedance of the connection port 101 of the RF front-end module 10 can be increased, and the imaginary impedance of the connection port 101 can be decreased, thereby allowing impedance matching to be achieved using a first inductor L1 with a smaller inductance value. In this case, the first inductor L1 can be a component with a smaller inductance value; for example, the first inductor L1 can be a 0-ohm resistor.

[0094] For example, such as Figure 9eAs shown, the RF front-end module 10 also includes a second inductor L2, which, along with the microstrip line S1, is connected in series between the connection port 101 and the input port 102 of the low-noise amplifier 12. The RF front-end module 10 also includes a third inductor L3, with the first end of the second inductor L2 grounded through the third inductor L3. Alternatively, the RF front-end module 10 also includes a fourth inductor L4, with the second end of the second inductor L2 grounded through the fourth inductor L4. This further improves the real impedance of the connection port 101 of the RF front-end module 10, enhancing matching performance and thereby increasing the gain of the low-noise amplifier 12 and reducing the input return loss of the low-noise amplifier 12. Furthermore, when the real impedance of the connection port 101 (point B) in the RF front-end module 10 meets actual requirements (e.g., high gain requirements), the value of the first inductor L1, located outside the substrate 11, can be flexibly adjusted to enable the low-noise amplifier 12 to meet impedance matching requirements in different operating frequency bands, achieving lower-cost broadband impedance matching.

[0095] In some embodiments, the RF front-end module 10 and the signal port 201 are mounted on a support plate, which may be, for example, a circuit board in an electronic device, or an exposed circuit board. The signal port 201 can be used to connect an antenna, for example, the support plate is a circuit board in an electronic device, and the signal port 201 is connected to the antenna of the electronic device; or the signal port 201 can be a test port, for example, the support plate is a test circuit board or may be called an evaluation board (EVB), and test signals can be input to the signal port 201 to test the performance of the RF front-end module 10; or the signal port can also be connected to other subsequent circuits for transmitting RF signals.

[0096] In some implementations, please refer to the foregoing embodiments. Figure 10 The connection port 101 of the RF front-end module 10 is connected to an interface 202 on the support plate via a connection cable. The interface 202 is connected to the signal port 201201 via a first inductor L1.

[0097] The RF front-end module 10 provided in this embodiment has a connection port 101 for connecting to a signal port 201 via a first inductor L1. The RF front-end module 10 includes a substrate 11, a low-noise amplifier 12, and a microstrip line S1. The connection port 101 is provided on the substrate 11. The low-noise amplifier 12 is disposed on the substrate 11 and includes an input port 102. The microstrip line S1 is disposed on the substrate 11. A first end of the microstrip line S1 is connected to the connection port 101, and a second end of the microstrip line S1 is connected to the input port 102 of the low-noise amplifier 12. The microstrip line S1 has a characteristic impedance greater than 50 ohms. By connecting a microstrip line with a characteristic impedance greater than 50 ohms in series between the input port 102 of the low-noise amplifier 12 and the connection port 101 of the RF front-end module 10, the real impedance of the connection port 101 of the RF front-end module 10 can be increased, improving the matching performance. This, in turn, increases the gain of the low-noise amplifier 12 and reduces the input return loss of the low-noise amplifier 12.

[0098] In some embodiments, the characteristic impedance of the microstrip line S1 can be increased by reducing the linewidth of the microstrip line S1 and / or increasing the distance between the microstrip line S1 and the ground layer 112 of the substrate 11, for example, making the characteristic impedance of the microstrip line S1 greater than 50 ohms, for example greater than 70 ohms.

[0099] In some implementations, the characteristic impedance of the microstrip line S1 can be increased by hollowing out the projected region corresponding to the microstrip line S1 on the intermediate metal layer 113. For example, the characteristic impedance of the microstrip line S1 can be made greater than 50 ohms, for example, greater than 70 ohms.

[0100] By reducing the linewidth of the microstrip line S1, increasing the distance between the microstrip line S1 and the ground layer 112 of the substrate 11, and hollowing out the projection area corresponding to the microstrip line S1 on the intermediate metal layer 113, one or more methods can be used to make the characteristic impedance of the microstrip line S1 greater than 50 ohms, for example, greater than 70 ohms. This can increase the real part of the input impedance of the low-noise amplifier 12, thereby improving the matching performance.

[0101] In some implementations, the real impedance of the connection port 101 of the RF front-end module 10 can be improved by connecting the second inductor L2 and the microstrip line S1 in series between the connection port 101 and the input port 102 of the low-noise amplifier 12, and / or by setting the third inductor L3 to ground one end of the microstrip line S1, and / or by setting the fourth inductor L4 to ground the other end of the microstrip line S1. This improves the matching performance and increases the gain of the low-noise amplifier 12 and reduces the input return loss of the low-noise amplifier 12. Furthermore, when the real impedance of the connection port 101 (point B) in the RF front-end module 10 meets the actual requirements (e.g., high gain requirements), the value of the first inductor L1, which is set outside the substrate 11, can be flexibly adjusted to enable the low-noise amplifier 12 to meet impedance matching requirements in different operating frequency bands, thereby achieving lower-cost broadband impedance matching requirements.

[0102] In some embodiments, the present application can be applied to a radio frequency front-end module 10 with a high gain of low noise amplifier 12 and a low real impedance of the input port 102 of low noise amplifier 12. The real impedance of the connection port 101 of the radio frequency front-end module 10 can be increased by one or more of the following: a microstrip line with a characteristic impedance greater than 50 ohms, a second inductor L2, a third inductor L3, and a fourth inductor L4, thereby improving the matching performance, which can increase the gain of low noise amplifier 12 and reduce the input return loss of low noise amplifier 12.

[0103] Please refer to the foregoing embodiments. Figure 11 ,like Figure 11 The diagram shown is a schematic diagram of a radio frequency front-end module 10 provided in another embodiment of this application.

[0104] like Figure 1 As shown, the radio frequency front-end module 10 includes:

[0105] Substrate 11, with connection port 101 provided on substrate 11;

[0106] A low-noise amplifier 12 is disposed on a substrate 11 and includes an input port 102.

[0107] Microstrip line S1 is disposed on substrate 11. The first end of microstrip line S1 is connected to connection port 101, and the second end of microstrip line S1 is connected to input port 102 of low noise amplifier 12.

[0108] The ratio of the linewidth of microstrip line S1 to the distance between microstrip line S1 and the ground layer 112 of substrate 11 is less than 0.5.

[0109] The RF front-end module 10 of this application embodiment can increase the characteristic impedance of the microstrip line S1 by reducing the ratio of the linewidth of the microstrip line S1 to the distance between the microstrip line S1 and the ground layer 112. For example, the characteristic impedance of the microstrip line S1 can be made greater than 50 ohms, thereby increasing the real impedance of the connection port 101 of the RF front-end module 10, improving the matching performance, and thus increasing the gain of the low noise amplifier 12 and reducing the input return loss of the noise amplifier 12.

[0110] Optionally, the length of the microstrip line S1 is greater than 50 micrometers.

[0111] Optionally, the linewidth of the microstrip line is less than or equal to 40 micrometers.

[0112] Optionally, the substrate 11 includes a first metal layer 111, and the microstrip line S1 is disposed on the first metal layer 111. At least one intermediate metal layer 113 is also included between the first metal layer 111 and the ground layer 112 of the substrate 11. The area on which the microstrip line S1 is projected onto the at least one intermediate metal layer 113 is a cutout area 1131.

[0113] Optionally, the substrate 11 includes a first metal layer 111, and a microstrip line S1 is disposed on the first metal layer 111. The distance between the first metal layer 111 and the ground layer 112 of the substrate 11 is greater than or equal to 100 micrometers.

[0114] Optionally, if the length of the microstrip line S1 is greater than 200 micrometers, the ratio of the linewidth of the microstrip line S1 to the distance between the microstrip line S1 and the ground layer 112 of the substrate 11 is less than 0.3.

[0115] Optionally, the low-noise amplifier 12 includes an amplifying transistor 121 and a source inductor 122, the source of the transistor being grounded through the source inductor 122, the inductance of the source inductor 122 being less than or equal to 1.2 nH (nanohenry).

[0116] Optionally, the ratio of the gate-source parasitic capacitance of the amplifying transistor 121 to the inductance of the source inductor 122 is less than 0.4.

[0117] Optionally, the real impedance of the connection port 101 on the substrate 11 is in the range of [10 ohms, 40 ohms].

[0118] Optionally, the RF front-end module 10 also includes a second inductor L2, and the second inductor L2 and the microstrip line S1 are connected in series between the connection port 101 and the input port 102 of the low-noise amplifier 12.

[0119] Optionally, the RF front-end module 10 also includes a third inductor L3, through which the first end of the microstrip line S1 is grounded; and / or

[0120] The RF front-end module 10 also includes a fourth inductor L4, and the second end of the microstrip line S1 is grounded through the fourth inductor L4.

[0121] The specific principle and implementation of the RF front-end module 10 provided in this application embodiment are similar to those of the RF front-end module 10 in the foregoing embodiments, and will not be repeated here. Furthermore, any parts not mentioned in this application embodiment can be referred to the relevant descriptions in the foregoing embodiments, and will not be repeated here.

[0122] Please refer to the foregoing embodiments. Figure 12 ,like Figure 12 The diagram shown is a schematic diagram of a radio frequency front-end module 10 provided in another embodiment of this application.

[0123] like Figure 12 As shown, the radio frequency front-end module 10 includes:

[0124] Substrate 11, with connection port 101 provided on substrate 11;

[0125] A low-noise amplifier 12 is disposed on a substrate 11 and includes an input port 102.

[0126] Adjustment unit 13, the adjustment unit 13 includes a microstrip line S1 and a second inductor L2 connected in series between connection port 101 and input port 102 of low noise amplifier 12;

[0127] The microstrip line S1 is disposed on the substrate 11.

[0128] In this embodiment of the RF front-end module 10, by connecting the second inductor L2 and the microstrip line S1 in series between the connection port 101 and the input port 102 of the low-noise amplifier 12, the real impedance of the connection port 101 of the RF front-end module 10 can be increased, improving the matching performance. This, in turn, increases the gain of the low-noise amplifier 12 and reduces the input return loss of the low-noise amplifier 12. In this embodiment, the characteristic impedance of the microstrip line S1 can be greater than 50 ohms, or it can be less than or equal to 50 ohms.

[0129] Optionally, if the length of the microstrip line S1 is greater than 50 micrometers, the ratio of the linewidth of the microstrip line S1 to the distance between the microstrip line S1 and the ground layer 112 of the substrate 11 is less than 0.5.

[0130] Optionally, if the length of the microstrip line S1 is greater than 200 micrometers, the ratio of the linewidth of the microstrip line S1 to the distance between the microstrip line S1 and the ground layer 112 of the substrate 11 is less than 0.3.

[0131] Optionally, the low-noise amplifier 12 includes an amplifying transistor 121 and a source inductor 122, the source of the transistor being grounded through the source inductor 122, the inductance of the source inductor 122 being less than or equal to 1.2 nH (nanohenry).

[0132] Optionally, the ratio of the gate-source parasitic capacitance of the amplifying transistor 121 to the inductance of the source inductor 122 is less than 0.4.

[0133] Optionally, the real impedance of the connection port 101 on the substrate 11 is in the range of [10 ohms, 40 ohms].

[0134] Optionally, the linewidth of the microstrip line is less than or equal to 40 micrometers.

[0135] Optionally, the substrate 11 includes a first metal layer 111, and the microstrip line S1 is disposed on the first metal layer 111. At least one intermediate metal layer 113 is also included between the first metal layer 111 and the ground layer 112 of the substrate 11. The area on which the microstrip line S1 is projected onto the at least one intermediate metal layer 113 is a cutout area 1131.

[0136] Optionally, the substrate 11 includes a first metal layer 111, and a microstrip line S1 is disposed on the first metal layer 111. The distance between the first metal layer 111 and the ground layer 112 of the substrate 11 is greater than or equal to 100 micrometers.

[0137] Optionally, the RF front-end module 10 also includes a third inductor L3, through which the first end of the microstrip line S1 is grounded; and / or

[0138] The RF front-end module 10 also includes a fourth inductor L4, and the second end of the microstrip line S1 is grounded through the fourth inductor L4.

[0139] The specific principle and implementation of the RF front-end module 10 provided in this application embodiment are similar to those of the RF front-end module 10 in the foregoing embodiments, and will not be repeated here. Furthermore, any parts not mentioned in this application embodiment can be referred to the relevant descriptions in the foregoing embodiments, and will not be repeated here.

[0140] Please refer to the foregoing embodiments. Figure 13 ,like Figure 13 The diagram shown is a schematic diagram of a radio frequency front-end module 10 provided in another embodiment of this application.

[0141] like Figure 13 As shown, the radio frequency front-end module 10 includes:

[0142] Substrate 11, with connection port 101 provided on substrate 11;

[0143] A low-noise amplifier 12 is disposed on a substrate 11 and includes an input port 102.

[0144] The adjustment unit 13 includes a microstrip line S1 and a third inductor L3 and / or a fourth inductor L4, wherein the third inductor L3 grounds the first end of the microstrip line S1 and the fourth inductor L4 grounds the second end of the microstrip line S1.

[0145] The microstrip line S1 is disposed on the substrate 11.

[0146] In this embodiment of the RF front-end module 10, by grounding the first end of the microstrip line S1 through the third inductor L3 and / or grounding the second end of the microstrip line S1 through the fourth inductor L4, the real impedance of the connection port 101 of the RF front-end module 10 can be increased, improving the matching performance. This, in turn, can increase the gain of the low-noise amplifier 12 and reduce the input return loss of the noise amplifier 12. In this embodiment, the characteristic impedance of the microstrip line S1 can be greater than 50 ohms, or it can be less than or equal to 50 ohms.

[0147] Optionally, if the length of the microstrip line S1 is greater than 50 micrometers, the ratio of the linewidth of the microstrip line S1 to the distance between the microstrip line S1 and the ground layer 112 of the substrate 11 is less than 0.5.

[0148] Optionally, if the length of the microstrip line S1 is greater than 200 micrometers, the ratio of the linewidth of the microstrip line S1 to the distance between the microstrip line S1 and the ground layer 112 of the substrate 11 is less than 0.3.

[0149] Optionally, the low-noise amplifier 12 includes an amplifying transistor 121 and a source inductor 122, the source of the transistor being grounded through the source inductor 122, the inductance of the source inductor 122 being less than or equal to 1.2 nH (nanohenry).

[0150] Optionally, the ratio of the gate-source parasitic capacitance of the amplifying transistor 121 to the inductance of the source inductor 122 is less than 0.4.

[0151] Optionally, the real impedance of the connection port 101 on the substrate 11 is in the range of [10 ohms, 40 ohms].

[0152] Optionally, when the gain of the noise amplifier 12 is greater than or equal to 16 dBm, the inductance value of the source inductor 122 is in the range of [0.4 nH, 1.2 nH].

[0153] Optionally, the linewidth of the microstrip line is less than or equal to 40 micrometers.

[0154] Optionally, the substrate 11 includes a first metal layer 111, and the microstrip line S1 is disposed on the first metal layer 111. At least one intermediate metal layer 113 is also included between the first metal layer 111 and the ground layer 112 of the substrate 11. The area on which the microstrip line S1 is projected onto the at least one intermediate metal layer 113 is a cutout area 1131.

[0155] Optionally, the substrate 11 includes a first metal layer 111, and a microstrip line S1 is disposed on the first metal layer 111. The distance between the first metal layer 111 and the ground layer 112 of the substrate 11 is greater than or equal to 100 micrometers.

[0156] Optionally, the RF front-end module 10 also includes a second inductor L2, and the second inductor L2 and the microstrip line S1 are connected in series between the connection port 101 and the input port 102 of the low-noise amplifier 12.

[0157] Optionally, the RF front-end module 10 has a connection port 101 on its substrate 11, which is used to connect to the signal port 201 through a first inductor L1. When the real impedance of the connection port 101 (point B) in the RF front-end module 10 meets the actual requirements (e.g., high gain requirements), the value of the first inductor L1, which is set outside the substrate 11, can be flexibly adjusted to enable the low-noise amplifier 12 to meet impedance matching requirements in different operating frequency bands, thus achieving lower-cost wideband impedance matching requirements.

[0158] The specific principle and implementation of the RF front-end module 10 provided in this application embodiment are similar to those of the RF front-end module 10 in the foregoing embodiments, and will not be repeated here. Furthermore, any parts not mentioned in this application embodiment can be referred to the relevant descriptions in the foregoing embodiments, and will not be repeated here.

[0159] Please refer to the foregoing embodiments. Figure 14 ,like Figure 14 The diagram shown is a schematic block diagram of an electronic device according to another embodiment of this application. The electronic device includes the radio frequency front-end module 10 of any of the foregoing embodiments.

[0160] In some implementations, such as Figure 15 As shown, the electronic device also includes a support plate, the radio frequency front-end module 10 is mounted on the support plate, and the support plate is provided with a signal port 201, so that the connection port 101 of the radio frequency front-end module 10 is connected to the signal port 201.

[0161] In some implementations, the support board is a test circuit board or may be called an evaluation board (EVB), which can input test signals to signal port 201 to test the performance of the RF front-end module 10.

[0162] In some embodiments, the electronic device further includes a first inductor L1, with a first end of the first inductor L1 connected to the signal port 201 and a second end of the first inductor L1 connected to the connection port 101 of the radio frequency front-end module 10.

[0163] When the real impedance of the connection port 101 (point B) in the RF front-end module 10 meets the actual requirements (e.g., high gain requirements), the value of the first inductor L1 set outside the substrate 11 can be flexibly adjusted to enable the low noise amplifier 12 to meet the impedance matching requirements under different operating frequency bands, thereby achieving lower cost and wider bandwidth impedance matching requirements.

[0164] The electronic device can be a mobile phone, tablet computer, vehicle terminal, or other communication device. Of course, it can also be other communication devices with communication functions. The embodiments of this application do not limit the specific types of electronic devices.

[0165] The specific principles and implementation methods of the electronic device provided in this application embodiment are similar to those of the radio frequency front-end module in the foregoing embodiments, and will not be repeated here. Furthermore, any parts not mentioned in this application embodiment can be referred to the relevant descriptions in the foregoing embodiments, and will not be repeated here.

[0166] It should be understood that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the scope of the application.

[0167] It should be understood that when an element or layer is referred to as "on," "adjacent to," "connected to," or "coupled to" other elements or layers, it may be directly on, adjacent to, connected to, or coupled to other elements or layers, or there may be intervening elements or layers. Conversely, when an element is referred to as "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" other elements or layers, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc., may be used to describe various elements, components, areas, layers, and / or portions, these elements, components, areas, layers, and / or portions should not be limited by these terms. These terms are only used to distinguish one element, component, area, layer, or portion from another element, component, area, layer, or portion. Therefore, without departing from the teachings of this application, the first element, component, area, layer, or portion discussed below may be referred to as a second element, component, area, layer, or portion.

[0168] Spatial relation terms such as “below,” “under,” “below,” “under,” “above,” “above,” etc., are used herein for convenience of description to describe the relationship between one element or feature shown in the figure and other elements or features. It should be understood that, in addition to the orientation shown in the figure, spatial relation terms are intended to also include different orientations of the device in use and operation. For example, if the device in the figure is flipped, then the element or feature described as “below,” “under,” or “below” other elements or features will be oriented “above” other elements or features. Therefore, the exemplary terms “below” and “under” can include both above and below orientations. The device may be otherwise oriented (rotated 90 degrees or otherwise) and the spatial descriptive terms used herein will be interpreted accordingly.

[0169] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the scope of this application. When used herein, the singular forms “a,” “an,” and “the” are also intended to include the plural forms unless the context clearly indicates otherwise. It should also be understood that the terms “comprising” and / or “including,” when used in this specification, identify the presence of the stated features, integers, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups. When used herein, the term “and / or” includes any and all combinations of the associated listed items.

[0170] The above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any person skilled in the art can easily conceive of various equivalent modifications or substitutions within the technical scope disclosed in this application, and these modifications or substitutions should all be covered within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. A radio frequency front-end module, characterized in that, The connection port of the RF front-end module is used to connect to the signal port through a first inductor, and the RF front-end module includes: A substrate, wherein the connection port is provided on the substrate; A low-noise amplifier, the low-noise amplifier being disposed on the substrate, the low-noise amplifier including an input port; A microstrip line is disposed on the substrate, with a first end of the microstrip line connected to the connection port and a second end of the microstrip line connected to the input port of the low-noise amplifier. The microstrip line is a microstrip line with a characteristic impedance greater than 50 ohms.

2. The radio frequency front-end module of claim 1, wherein, The length of the microstrip line is greater than 50 micrometers.

3. The radio frequency front-end module of claim 1, wherein, The ratio of the linewidth of the microstrip line to the distance between the microstrip line and the ground layer of the substrate is less than 0.

5.

4. The radio frequency front-end module of claim 1, wherein, The linewidth of the microstrip line is less than or equal to 40 micrometers.

5. The radio frequency front-end module according to claim 1, characterized in that, The microstrip line is disposed on a first metal layer, and the distance between the first metal layer and the ground layer of the substrate is greater than or equal to 100 micrometers.

6. The radio frequency front-end module of claim 1, wherein, If the length of the microstrip line is greater than 200 micrometers, then the microstrip line is a microstrip line with a characteristic impedance greater than or equal to 70 ohms.

7. The radio frequency front end module of claim 1, wherein, If the length of the microstrip line is greater than 200 micrometers, then the ratio of the linewidth of the microstrip line to the distance between the microstrip line and the ground layer of the substrate is less than 0.

3.

8. The radio frequency front-end module of claim 1, wherein, The real impedance of the connection port on the substrate is in the range of [10 ohms, 40 ohms].

9. The radio frequency front-end module of claim 1, wherein, The low-noise amplifier includes an amplifying transistor and a source inductor, wherein the source of the amplifying transistor is grounded through the source inductor; The inductance value of the source inductor is less than or equal to 1.2nH.

10. The radio frequency front end module of claim 9, wherein, When the gain of the low-noise amplifier is greater than or equal to 16dBm, the inductance value of the source inductor is in the range of [0.4nH, 1.2nH].

11. The radio frequency front end module of claim 9, wherein, The ratio of the gate-source parasitic capacitance of the amplifying transistor to the inductance of the source inductor is less than 0.

4.

12. The radio frequency front end module of claim 9, wherein, The gate-source parasitic capacitance of the amplifying transistor is in the range of [100pF, 300pF].

13. The radio frequency front-end module of any one of claims 1-12, wherein, The substrate includes a first metal layer, the microstrip line is disposed on the first metal layer, and at least one intermediate metal layer is further included between the first metal layer and the ground layer of the substrate. The area on which the microstrip line is projected onto the at least one intermediate metal layer is a cut-out area.

14. The radio frequency front-end module of any one of claims 1-12, wherein, The RF front-end module also includes a second inductor, which and the microstrip line are connected in series between the connection port and the input port of the low-noise amplifier.

15. The radio frequency front end module of claim 14, wherein, The first end of the microstrip line is connected to the connection port via the second inductor, or The second end of the microstrip line is connected to the input port of the low-noise amplifier via the second inductor, or The second inductor includes a first sub-inductor and a second sub-inductor. The first end of the microstrip line is connected to the connection port through the first sub-inductor, and the second end of the microstrip line is connected to the input port of the low-noise amplifier through the second sub-inductor.

16. The radio frequency front end module of claim 14, wherein, The second inductor includes one or more of the following: metal trace inductor, surface mount inductor, and bonding wire.

17. The radio frequency front end module of claim 14, wherein, in, The substrate includes a metal layer, and the second inductor is wound around the metal layer of the substrate via metal traces.

18. The radio frequency front end module of claim 14, wherein, The inductance value of the first inductor is less than or equal to 10 nanohenries.

19. The radio frequency front end module of claim 14, wherein, The RF front-end module further includes a third inductor, wherein the first terminal of the second inductor is grounded through the third inductor, and / or, The radio frequency front-end module also includes a fourth inductor, and the second end of the second inductor is grounded through the fourth inductor.

20. The radio frequency front-end module of any one of claims 1-12, wherein, The RF front-end module further includes a third inductor, and the first end of the microstrip line is grounded through the third inductor; and / or The radio frequency front-end module also includes a fourth inductor, and the second end of the microstrip line is grounded through the fourth inductor.

21. The radio frequency front end module of claim 20, wherein, The third inductor includes one or more of the following: metal trace inductor, surface mount inductor, and bonding wire.

22. The radio frequency front-end module of any one of claims 1-12, wherein, The substrate has a top metal layer and a bottom metal layer, and a plurality of metal layers are further included between the top metal layer and the bottom metal layer, the plurality of metal layers being spaced apart along the direction extending from the top metal layer to the bottom metal layer; The microstrip line is formed on the top metal layer of the substrate, or... The distance between the metal layer forming the microstrip line and the top metal layer of the substrate is less than the distance between the metal layer forming the microstrip line and the bottom metal layer of the substrate.

23. The radio frequency front end module of claim 22, wherein, The bottom metal layer of the substrate is a ground layer.

24. A radio frequency front end module, comprising: The radio frequency front-end module includes: A substrate, wherein a connection port is provided on the substrate; A low-noise amplifier, the low-noise amplifier being disposed on the substrate, the low-noise amplifier including an input port; A microstrip line is disposed on the substrate, with a first end of the microstrip line connected to the connection port and a second end of the microstrip line connected to the input port of the low-noise amplifier. The ratio of the linewidth of the microstrip line to the distance between the microstrip line and the ground layer of the substrate is less than 0.

5.

25. The radio frequency front end module of claim 24, wherein, The length of the microstrip line is greater than 50 micrometers.

26. The radio frequency front end module of claim 25, wherein, The linewidth of the microstrip line is less than or equal to 40 micrometers.

27. The radio frequency front end module of claim 25, wherein, The microstrip line is disposed on a first metal layer, and the distance between the first metal layer and the ground layer of the substrate is greater than or equal to 100 micrometers.

28. The radio frequency front end module of claim 25, wherein, If the length of the microstrip line is greater than 200 micrometers, then the ratio of the linewidth of the microstrip line to the distance between the microstrip line and the ground layer of the substrate is less than 0.

3.

29. The radio frequency front-end module according to any one of claims 24-28, characterized in that, The low-noise amplifier includes an amplifying transistor and a source inductor, wherein the source of the transistor is grounded through the source inductor; The inductance value of the source inductor is less than or equal to 1.2nH.

30. The radio frequency front end module of claim 29, wherein, The ratio of the gate-source parasitic capacitance of the amplifying transistor to the inductance of the source inductor is less than 0.

4.

31. The radio frequency front-end module of any one of claims 24-28, wherein, The real impedance of the connection port on the substrate is in the range of [10 ohms, 40 ohms].

32. A radio frequency front end module, comprising: The radio frequency front-end module includes: A substrate, wherein a connection port is provided on the substrate; A low-noise amplifier, the low-noise amplifier being disposed on the substrate, the low-noise amplifier including an input port; The adjustment unit includes a microstrip line and a second inductor connected in series between the connection port and the input port of the low-noise amplifier; The microstrip line is disposed on the substrate.

33. The radio frequency front end module of claim 32, wherein, If the length of the microstrip line is greater than 50 micrometers, then the ratio of the linewidth of the microstrip line to the distance between the microstrip line and the ground layer of the substrate is less than 0.

5.

34. The radio frequency front-end module according to claim 32, characterized in that, If the length of the microstrip line is greater than 200 micrometers, then the ratio of the linewidth of the microstrip line to the distance between the microstrip line and the ground layer of the substrate is less than 0.

3.

35. The radio frequency front-end module of any one of claims 32-34, wherein, The low-noise amplifier includes an amplifying transistor and a source inductor, wherein the source of the transistor is grounded through the source inductor; The inductance value of the source inductor is less than or equal to 1.2nH.

36. The radio frequency front end module of claim 35, wherein, The ratio of the gate-source parasitic capacitance of the amplifying transistor to the inductance of the source inductor is less than 0.

4.

37. A radio frequency front end module, comprising: The radio frequency front-end module includes: A substrate, wherein a connection port is provided on the substrate; A low-noise amplifier, the low-noise amplifier being disposed on the substrate, the low-noise amplifier including an input port; An adjustment unit, comprising a microstrip line and a third inductor and / or a fourth inductor, wherein the third inductor grounds a first end of the microstrip line and the fourth inductor grounds a second end of the microstrip line; The microstrip line is disposed on the substrate.

38. The radio frequency front end module of claim 37, wherein, If the length of the microstrip line is greater than 50 micrometers, then the ratio of the linewidth of the microstrip line to the distance between the microstrip line and the ground layer of the substrate is less than 0.

5.

39. The radio frequency front-end module according to claim 37, characterized in that, If the length of the microstrip line is greater than 200 micrometers, then the ratio of the linewidth of the microstrip line to the distance between the microstrip line and the ground layer of the substrate is less than 0.

3.

40. The radio frequency front-end module of any one of claims 37-39, wherein, The low-noise amplifier includes an amplifying transistor and a source inductor, wherein the source of the transistor is grounded through the source inductor; The inductance value of the source inductor is less than or equal to 1.2nH.

41. The radio frequency front end module of claim 40, wherein, When the gain of the low-noise amplifier is greater than or equal to 16dBm, the inductance value of the source inductor is in the range of [0.4nH, 1.2nH].

42. An electronic device, comprising: The electronic device includes the radio frequency front-end module as described in any one of claims 1 to 41.

43. The electronic device of claim 42, wherein, The electronic device also includes a support plate, on which the radio frequency front-end module is mounted. The support plate is provided with a signal port, and the connection port of the radio frequency front-end module is connected to the signal port.

44. The electronic device of claim 43, wherein, The support plate is an evaluation plate.

45. The electronic device of claim 42, wherein, The electronic device further includes a first inductor, a first end of which is connected to the signal port, and a second end of which is connected to the connection port of the radio frequency front-end module.

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