A vc vapor chamber
By integrating the middle plate with the VC heat dissipation plate and utilizing the design of the support structure and capillary structure, the problem of large overall thickness in the existing technology has been solved, achieving overall thinning and improved heat dissipation efficiency.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- TRIO METAL (GZ) CO LTD
- Filing Date
- 2025-08-11
- Publication Date
- 2026-07-10
AI Technical Summary
The existing bonding method between the VC heat spreader and the middle plate results in a relatively large overall thickness, making it difficult to achieve a thinner and lighter design.
The middle plate is integrated with the VC heat exchange plate, and a vacuum cavity is constructed through the support structure and capillary structure. Efficient heat transfer is achieved by combining the phase change cycle of the cooling medium. The gaps in the support structure ensure unobstructed steam flow channels. The middle plate and the cover plate are designed to be flush to avoid height differences and stress concentration.
This reduces the overall thickness of the device, provides greater freedom in the layout of electronic components, avoids local hot spots and stress concentration, and improves structural reliability and heat dissipation efficiency.
Smart Images

Figure CN224481958U_ABST