A tin hydride manufacturing apparatus for etching a tinned electrode using plasma
The generation of tinane by plasma etching technology solves the problems of high raw material costs and long reaction cycles in traditional tinane manufacturing methods, realizing safe and economical tinane production and avoiding the risks of flammable and explosive storage and transportation.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- SICHUAN UNIV
- Filing Date
- 2025-08-12
- Publication Date
- 2026-07-14
AI Technical Summary
Existing methods for producing stanane suffer from high raw material costs, long reaction cycles, and flammability and explosiveness, which limit their large-scale application and lack a production solution that balances safety and economy.
Plasma etching technology is used to etch tin-plated electrodes to generate tin alkane. Tin alkane is generated by bombarding the surface of the tin-plated electrodes with hydrogen plasma. The reaction cycle is short, and the pretreatment and post-separation steps are omitted, enabling continuous production.
This method enables in-situ generation of stanane, avoiding the risks of flammable and explosive storage and transportation, reducing raw material costs, and allowing for precise control of the generation rate and purity.
Smart Images
Figure CN224485983U_ABST
Abstract
Description
Technical Field
[0001] This utility model belongs to the field of special gas manufacturing technology, specifically relating to a tinane manufacturing device that uses plasma to etch tin-plated electrodes. Background Technology
[0002] Stane (SnH4), as an important semiconductor material precursor, is widely used in thin film deposition, nanomaterial synthesis, and other fields. However, its physicochemical properties pose significant safety risks:
[0003] 1. Toxicity risk: Inhalation of stanane may cause respiratory irritation, and long-term exposure may lead to organ damage;
[0004] 2. Flammability and explosiveness: It forms an explosive mixture with air (explosion limits 1.2%-98%), and has poor thermal stability. It slowly decomposes into tin and hydrogen at room temperature (SnH4→Sn+2H2↑), and the decomposition accelerates with increasing temperature.
[0005] 3. Manufacturing process bottlenecks: Traditional methods (such as magnesium tin oxide reduction, tin tetrachloride hydrogenation, and electrochemical reduction) have problems such as high raw material costs and long reaction cycles. Furthermore, due to their flammable and explosive properties, they require special containers and strict supervision during transportation, which further limits their large-scale application.
[0006] In summary, the existing technology lacks a tinane production scheme that can balance safety, economy, and preparation efficiency. There is an urgent need to develop new in-situ generation technologies to avoid transportation risks and reduce process complexity. Utility Model Content
[0007] Based on the problems existing in the above-mentioned background technology, this utility model proposes a tin alkane manufacturing equipment that uses plasma to etch tin-plated electrodes, which solves the problems of high raw material cost and long reaction cycle in traditional tin alkane manufacturing methods.
[0008] The embodiments of this utility model are implemented as follows:
[0009] This invention provides a tinane manufacturing apparatus that uses plasma to etch a tin-plated electrode, comprising a reaction chamber, a tin-plated electrode, a gas delivery system, and a quartz microbalance; the tin-plated electrode is disposed in the reaction chamber and electrically connected to an external radio frequency power supply via an electrode cable; the gas delivery system is connected to the reaction chamber and is used to quantitatively deliver argon and hydrogen to the reaction chamber; the measuring end of the quartz microbalance is located inside the reaction chamber.
[0010] The working principle of a tinane manufacturing device that uses plasma to etch tin-plated electrodes is as follows: Before the reaction, the reaction chamber is evacuated to a low-pressure environment of 3-10 Pa using a vacuum pump. Then, a mixture of hydrogen and argon gas is introduced into the reaction chamber through a gas delivery system. Argon gas is used for plasma ignition and gas purging. The radio frequency power supply is activated to generate a high-frequency electric field between the electrodes, ionizing the mixed gas to form hydrogen plasma. High-energy particles (such as H⁺ and H*) in the hydrogen plasma bombard the surface of the tin-plated electrode, causing tin atoms to detach from the electrode through physical sputtering and chemical etching, and combine with hydrogen to form tinane (SnH4). The reaction formula is as follows:
[0011] Sn + 4 H⁺ → SnH4
[0012] The generated tinane is discharged through the chamber outlet for subsequent processes or direct use in the in-situ system. Due to the easy decomposition of tinane (SnH4→Sn+2H2↑), solid tin is readily produced and deposited on the quartz microbalance. Therefore, the total amount of tinane produced is calculated by multiplying the thickness obtained from the product and the volume occupied by the quartz microbalance.
[0013] Furthermore, a transparent observation window is provided on the reaction chamber. The presence of a light pink color indicates successful ignition.
[0014] Furthermore, the tin-plated electrode has a circular plate structure and is vertically arranged; the tin-plated electrode includes a substrate and a tin-plated layer disposed on the substrate, the thickness of the tin-plated layer being 5μm~10μm. Before use, the surface oxide layer is removed by Ar plasma etching for 10 minutes to improve the activity of tin atoms.
[0015] Furthermore, the gas delivery system includes an argon inlet connector and a hydrogen inlet connector that communicate with the reaction chamber; the argon inlet connector and the hydrogen inlet connector are respectively connected to an argon delivery device and a hydrogen delivery device outside the reaction chamber.
[0016] Furthermore, a gas mixing chamber is provided at the bottom of the reaction chamber, which is connected to the interior of the gas mixing chamber and is connected to the tin alkane usage equipment; a nitrogen inlet connector is provided on the gas mixing chamber, which is connected to a nitrogen delivery equipment outside the reaction chamber.
[0017] Furthermore, vacuum gauges are installed on the side walls of both the reaction chamber and the gas mixing chamber.
[0018] Furthermore, a chamber heating jacket is provided on the outer wall of the reaction chamber.
[0019] Compared with traditional methods for manufacturing stanane, the advantages of this invention are:
[0020] This invention provides a tin alkane manufacturing device that uses plasma to etch tin-plated electrodes. It can generate tin alkane in situ, eliminating complex pretreatment and post-separation steps, realizing continuous production, and avoiding the risks of flammability and explosion during storage and transportation. The tin alkane is generated by bombarding the tin-plated electrode surface with high-energy particles (such as H⁺, H*) in hydrogen plasma, which has a short reaction cycle and low raw material cost for tin-plated electrodes. The tin alkane generation rate and purity can be precisely controlled by adjusting the gas flow rate, pressure, and plasma power. Attached Figure Description
[0021] To more clearly illustrate the technical solutions in the embodiments of this utility model or the prior art, the drawings used in the embodiments will be briefly described below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort. The above and other objects, features, and advantages of this utility model will become clearer through the drawings. The same reference numerals indicate the same parts in all the drawings. The drawings are not intentionally drawn to scale to actual dimensions; the focus is on illustrating the main idea of this utility model.
[0022] Figure 1 This is a three-dimensional structural diagram of a stanane manufacturing apparatus that uses plasma to etch tin-plated electrodes. Figure 1 .
[0023] Figure 2 This is a three-dimensional structural diagram of a stanane manufacturing apparatus that uses plasma to etch tin-plated electrodes. Figure 2 .
[0024] Figure 3 This is a schematic diagram of the internal structure of the reaction chamber.
[0025] The components include: 1. Reaction chamber; 2. Tin-plated electrode; 3. Quartz microbalance; 4. Transparent observation window; 5. Argon inlet connector; 6. Nitrogen inlet connector; 7. Hydrogen inlet connector; 8. Gas mixing chamber; and 9. Vacuum gauge. Detailed Implementation
[0026] To make the objectives, technical solutions, and advantages of the embodiments of this utility model clearer, the technical solutions of the embodiments of this utility model will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this utility model, and not all embodiments. The components of the embodiments of this utility model described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.
[0027] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but merely to illustrate selected embodiments of the invention. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without inventive effort are within the scope of protection of the present invention.
[0028] It should be noted that similar labels and letters in the following figures indicate similar items. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures.
[0029] Furthermore, the terms "first," "second," etc., are used only to distinguish descriptions and should not be interpreted as indicating or implying relative importance.
[0030] Please refer to Figures 1-3 As shown, this utility model provides a tin alkane manufacturing device that uses plasma to etch a tin-plated electrode 2, which includes a reaction chamber 1, a tin-plated electrode 2, a gas delivery system and a quartz microbalance 3.
[0031] Specifically, reaction chamber 1 is made of 316L stainless steel, is cylindrical, and its inner wall is electrolytically polished. It is equipped with a flange-type sealing cover to ensure a vacuum level of up to 10. -1 Below Pa.
[0032] The tin-plating electrode 2 has a circular plate-like structure and is vertically arranged. The tin-plating electrode 2 includes a substrate and a tin-plated layer disposed on the substrate, the thickness of which is 5μm~10μm. In use, argon plasma etching is used for 10 minutes to remove the surface oxide layer and improve the activity of tin atoms.
[0033] The tin-plated electrode 2 is disposed inside the reaction chamber 1 and is electrically connected to an external radio frequency power supply via an electrode cable. The radio frequency power supply has a power of 200-2000W. The gas delivery system is connected to the reaction chamber 1 and is used to quantitatively deliver argon and hydrogen to the reaction chamber 1. The measuring end of the quartz microbalance 3 is located inside the reaction chamber 1.
[0034] Specifically, the purity of hydrogen is ≥99.999%, and the flow control accuracy is ±0.1 sccm; the purity of argon is ≥99.999%, and it is used for plasma ignition and gas purging; the hydrogen flow rate is 200-2000 sccm, and the argon flow rate is 500-1500 sccm.
[0035] Furthermore, a transparent observation window 4 is provided on the reaction chamber 1. Observation is made through the observation window to check for a light pink color; if present, the reaction has successfully ignited.
[0036] Furthermore, the tin-plated electrode 2 has a circular plate structure and is vertically arranged; the tin-plated electrode 2 includes a substrate and a tin-plated layer disposed on the substrate, the thickness of the tin-plated layer being 5μm~10μm. Before use, the surface oxide layer is removed by Ar plasma etching for 10 minutes to improve the activity of tin atoms.
[0037] Furthermore, the gas delivery system includes an argon inlet connector 5 and a hydrogen inlet connector 7 connected to the reaction chamber 1; the argon inlet connector 5 and the hydrogen inlet connector 7 are respectively connected to an argon delivery device and a hydrogen delivery device outside the reaction chamber 1.
[0038] Furthermore, a gas mixing chamber 1 is provided at the bottom of the reaction chamber 1, communicating with its interior. The gas mixing chamber 1 is connected to the tinane-using equipment. A nitrogen inlet connector is provided on the gas mixing chamber 1, communicating with a nitrogen delivery device outside the reaction chamber 1. The nitrogen flow rate is 70-77 L / min. The role of nitrogen is to accelerate gas flow, thereby allowing the tinane to flow quickly and reducing its decomposition.
[0039] Furthermore, vacuum gauges 9 are installed on the side walls of both the reaction chamber 1 and the gas mixing chamber 8.
[0040] The working principle of a tin alkane manufacturing device that uses plasma to etch a tin-plated electrode 2 is as follows: Before the reaction, the reaction chamber 1 is evacuated to a low-pressure environment of 5-10 Pa by a vacuum pump. Then, a mixture of hydrogen and argon gas is introduced into the reaction chamber 1 through a gas delivery system. Argon gas is used for plasma ignition and gas purging. The radio frequency power supply is activated to generate a high-frequency electric field between the electrodes, causing the mixed gas to ionize and form hydrogen plasma. High-energy particles (such as H⁺, H*) in the hydrogen plasma bombard the surface of the tin-plated electrode 2, causing tin atoms to detach from the electrode through physical sputtering and chemical etching, and combine with hydrogen to generate tin alkane (SnH4). The reaction formula is as follows:
[0041] Sn + 4 H⁺ → SnH4
[0042] The generated tinane is discharged through the chamber outlet for subsequent processes or direct use in the in-situ system. Due to the easy decomposition of tinane (SnH4→Sn+2H2↑), solid tin is readily produced and deposited on the quartz microbalance 3. Therefore, the total amount of tinane produced is calculated by using the thickness of the deposition and the volume occupied by the quartz microbalance 3.
[0043] Compared to traditional tinane manufacturing methods, this invention provides a tinane manufacturing device that uses plasma to etch a tin-plated electrode 2, generating tinane in situ, eliminating complex pretreatment and post-separation steps, achieving continuous production, and avoiding the risks of flammability and explosion during storage and transportation. The method of generating tinane by bombarding the surface of the tin-plated electrode 2 with high-energy particles (such as H⁺, H*) in hydrogen plasma results in a short reaction cycle and low raw material cost for the tin-plated electrode 2. The tinane generation rate and purity can be precisely controlled by adjusting the gas flow rate, pressure, and plasma power.
[0044] The above description is merely a preferred embodiment of this utility model and is not intended to limit the utility model. Various modifications and variations can be made to this utility model by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this utility model should be included within the protection scope of this utility model.
Claims
1. A tinane manufacturing apparatus that uses plasma to etch tin-plated electrodes, characterized in that, It includes a reaction chamber, a tin-plated electrode, a gas delivery system, and a quartz microbalance; the tin-plated electrode is disposed in the reaction chamber and electrically connected to an external radio frequency power supply via an electrode cable; the gas delivery system is connected to the reaction chamber and is used to quantitatively deliver argon and hydrogen to the reaction chamber; the measuring end of the quartz microbalance is located inside the reaction chamber.
2. The tinane manufacturing apparatus for etching tin-plated electrodes using plasma according to claim 1, characterized in that, A transparent observation window is provided on the reaction chamber.
3. The tinane manufacturing apparatus for etching tin-plated electrodes using plasma according to claim 1, characterized in that, The tin-plated electrode has a circular plate structure and is vertically arranged. The tin-plated electrode includes a substrate and a tin-plated layer disposed on the substrate, and the thickness of the tin-plated layer is 5μm~10μm.
4. The tinane manufacturing apparatus for etching tin-plated electrodes using plasma according to claim 3, characterized in that, The gas delivery system includes an argon inlet connector and a hydrogen inlet connector that communicate with the reaction chamber; the argon inlet connector and the hydrogen inlet connector are respectively connected to an argon delivery device and a hydrogen delivery device outside the reaction chamber.
5. The tinane manufacturing apparatus for etching tin-plated electrodes using plasma according to claim 1, characterized in that, The bottom of the reaction chamber is provided with a gas mixing chamber that communicates with the interior of the reaction chamber, and the gas mixing chamber is connected to the tin alkane usage equipment; the gas mixing chamber is provided with a nitrogen inlet connector that communicates with the nitrogen delivery equipment outside the reaction chamber.
6. The tinane manufacturing apparatus for etching tin-plated electrodes using plasma according to claim 5, characterized in that, Vacuum gauges are installed on the side walls of both the reaction chamber and the gas mixing chamber.