MOS short circuit identification protection circuit
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- 苏州星德胜智能电气有限公司
- Filing Date
- 2025-07-14
- Publication Date
- 2026-07-21
AI Technical Summary
MOSFETs may short-circuit on the circuit board, causing damage to other chips or circuit modules. Existing technology lacks effective identification and protection measures.
Design a short-circuit identification and protection circuit for MOSFETs. The circuit detects current through resistor RS1, generates an interrupt signal using transistor Q2 and capacitor C1, and controls a relay module via a microcontroller to switch MOSFET Q4. Combined with a jumper, the faulty MOSFET Q3 is isolated, providing battery charging protection.
It achieves reliable identification and protection against MOSFET short circuits, extends circuit life, provides battery charging protection, and prevents current damage in case of misconnection.
Smart Images

Figure CN224537781U_ABST