Exhaust system and semiconductor device

Abstract

The utility model discloses a kind of exhaust system and semiconductor equipment, it is related to the field of semiconductor manufacturing technology.Semiconductor equipment has two layers of process space, each layer process space is equipped with process unit, and upper and lower layer process unit is vertically aligned.Exhaust system includes exhaust device, one exhaust device corresponds to the two layers of process unit set in vertical direction alignment setting, and exhaust device is connected in vertical direction bottom mounting surface of lower layer process space and top mounting surface of upper layer process space, covering the height of two layers of process space.Exhaust device is respectively equipped with exhaust port corresponding upper layer process space and lower layer process space, exhaust port and corresponding process unit are communicated, to make exhaust device can simultaneously suck gas in two layers of process unit.The exhaust device of the exhaust system is while realizing two layers of process unit concentrated exhaust, serve as equipment structure support and space separation component, significantly simplify the number of parts, improve space utilization and equipment integration.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor manufacturing technology, and in particular to a ventilation system and semiconductor equipment. Background Technology

[0002] As the core substrate for semiconductor manufacturing, wafers are typically made from single-crystal silicon through multiple processes including dicing, coating, polishing, and cleaning. In subsequent processing, electroplating deposits metal onto the wafer surface using electroplating tanks and chambers. This process requires heating the electroplating solution to a specific temperature, causing corrosive acid and alkaline gases, as well as toxic waste gases, to continuously evaporate from both closed and semi-open electroplating tanks and chambers. During cleaning (such as acid / alkali ultrasonic cleaning), the chemical reactions also generate large amounts of harmful vapors. Similarly, in wafer polishing, wafers are suction-loaded into the polishing chamber using suction cups. Therefore, semiconductor equipment performing these processes is typically equipped with exhaust systems to remove gases from the process chambers.

[0003] Currently, the ventilation systems of these semiconductor devices generally use dispersed ventilation ducts to extract gases from the process chambers of different layers within the semiconductor device. However, the use of ventilation ducts leads to a chaotic and intersecting distribution of ducts, which increases the spatial layout area of ​​the semiconductor device. Furthermore, the installation of ducts is complex, and maintenance requires repeated disassembly of ducts, making maintenance difficult. Utility Model Content

[0004] The purpose of this invention is to propose a ventilation system and semiconductor equipment to reduce the space occupied by the ventilation system within the semiconductor equipment, thereby improving space utilization and adaptability of equipment layout.

[0005] To achieve this objective, the present invention adopts the following technical solution:

[0006] A ventilation system is provided for a semiconductor device having two layers of process space in a vertical direction, each layer of process space having a process unit, and the upper and lower process units being aligned in the vertical direction. The ventilation system includes a ventilation device, with one ventilation device corresponding to each of the two vertically aligned process units, and the ventilation device connecting the bottom mounting surface of the lower process space and the top mounting surface of the upper process space in the vertical direction, covering the height of the two process spaces.

[0007] The exhaust device is equipped with exhaust ports corresponding to different layers of process space. The exhaust ports are connected to the corresponding process units so that the exhaust device can simultaneously draw gas from two layers of process units.

[0008] The exhaust device connects the front and rear mounting surfaces of the two process spaces in the horizontal direction, covering the width of the two process spaces.

[0009] As an optional embodiment of the exhaust system, the thickness of the exhaust device is less than the width of the exhaust device, and the thickness of the exhaust device is 1cm-10cm;

[0010] Alternatively, the thickness of the exhaust device may be 3cm, 4cm, 5cm, or 6cm.

[0011] As an optional solution to the ventilation system, the ventilation device further includes at least one ventilation plate, the ventilation plate having an internal ventilation cavity, the ventilation port communicating with the ventilation cavity, and the ventilation cavity having an exhaust port at its top.

[0012] As an optional solution for the exhaust system, the exhaust chamber is provided with a gas-liquid separation structure, which is used to separate the liquid in the gas entering the exhaust chamber.

[0013] The bottom of the exhaust plate is provided with a liquid collection tank, and the bottom of the liquid collection tank is provided with a first drain outlet, which is connected to the exhaust cavity.

[0014] As an optional solution for the exhaust system, the gas-liquid separation structure includes a first condenser plate, which is disposed on two opposing inner walls of the exhaust chamber. The first condenser plate on one inner wall and the first condenser plate on the other inner wall are respectively staggered and inclined upward to form a connected exhaust channel.

[0015] And / or, the gas-liquid separation structure includes a second condenser plate, which is positioned directly opposite the exhaust port at the bottom of the exhaust chamber; the second condenser plate includes a first plate and a second plate that are respectively inclined downwards at a preset angle.

[0016] As an optional solution for the exhaust system, the exhaust chamber is provided with a partition plate, which is used to separate the gas flowing in from the exhaust ports corresponding to different process units.

[0017] As an optional solution to the exhaust system, the exhaust device further includes a junction box, each of the junction box's branch ports being connected to one of the process units, and the junction box's confluence port being connected to the exhaust port.

[0018] A semiconductor device, comprising:

[0019] A rack having at least two layers of partition frames stacked vertically;

[0020] As described in any of the above schemes, the exhaust device is installed on the side of the partition frame, and together with the mounting surface of the partition frame, they form a process space.

[0021] The process unit is located within the process space;

[0022] One of the aforementioned exhaust devices covers two layers of partition frames and simultaneously draws in gas from both process units.

[0023] As an alternative to the semiconductor device, each layer of the process space is provided with at least one set of process units, each set including two process units arranged side by side.

[0024] As an alternative to the semiconductor device, the semiconductor device includes at least one of electroplating equipment, cleaning equipment, and polishing equipment.

[0025] The beneficial effects of this utility model are:

[0026] This utility model provides a ventilation system for semiconductor equipment. The semiconductor equipment has two layers of process space, each layer containing process units, with the upper and lower process units vertically aligned. The ventilation system includes a ventilation device, one device corresponding to each of the two vertically aligned process units. The ventilation device connects the bottom mounting surface of the lower process space and the top mounting surface of the upper process space, covering the height of both layers. The ventilation device has ventilation ports corresponding to both the upper and lower process spaces, and each ventilation port is connected to its corresponding process unit, allowing the ventilation device to simultaneously draw gas from both layers of process units. This ventilation system, through vertical integration design, uses a single structure to connect the mounting surfaces of the two aligned process units, covering the height of both layers and providing independent ventilation ports for simultaneous gas extraction and exhaust. While achieving centralized ventilation of the two layers of process units, it also serves as a structural support and space divider, significantly reducing the number of components, improving space utilization, and increasing equipment integration.

[0027] The semiconductor equipment provided by this utility model includes a rack, process units, and the aforementioned exhaust system. The rack has at least two layers of vertically stacked partition frames. The exhaust device is installed on the side of the partition frames, forming a process space together with the mounting surface of the partition frames. The process units are located within the process space. One exhaust device covers two layers of partition frames and simultaneously draws gas from two layers of process units. This semiconductor equipment, through the vertical integration design of the exhaust device, achieves the triple functions of process space enclosure of two layers of partition frames, synchronous gas extraction, and rigid equipment support in a single structure. It eliminates the structural redundancy of traditional multi-layer independent exhaust ducts and auxiliary supports, reduces the space occupied by the semiconductor equipment, and improves installation efficiency and layout adaptability. Attached Figure Description

[0028] Figure 1 This is a schematic diagram of the ventilation device provided in Embodiment 1 of this utility model;

[0029] Figure 2This is a side view of the ventilation device provided in Embodiment 1 of this utility model;

[0030] Figure 3 yes Figure 2 Sectional view along the middle AA direction;

[0031] Figure 4 This is another cross-sectional view of the ventilation device provided in Embodiment 1 of this utility model;

[0032] Figure 5 This is a schematic diagram of the connection between the water collection tank and the second exhaust pipe provided in Embodiment 1 of this utility model;

[0033] Figure 6 This is a first structural schematic diagram of the adapter box provided in Embodiment 1 of this utility model;

[0034] Figure 7 This is a schematic diagram of the second structure of the adapter box provided in Embodiment 1 of this utility model;

[0035] Figure 8 This is a top view of the adapter box provided in Embodiment 1 of this utility model;

[0036] Figure 9 yes Figure 8 Sectional view along the BB direction;

[0037] Figure 10 This is a first structural schematic diagram of the semiconductor device provided in Embodiment 2 of this utility model;

[0038] Figure 11 This is a front view of the semiconductor device provided in Embodiment 2 of this utility model;

[0039] Figure 12 This is a schematic diagram of the second structure of the semiconductor device provided in Embodiment 2 of this utility model.

[0040] In the picture:

[0041] 100. Rack;

[0042] 201. Electroplating chamber; 202. Electroplating tank;

[0043] 1. Exhaust panel; 11. Exhaust chamber; 12. First exhaust port; 13. Exhaust vent;

[0044] 21. First condenser plate; 22. Second condenser plate; 221. First plate; 222. Second plate;

[0045] 3. Adapter box; 31. Diverter port; 32. Manifold port; 33. Support plate; 331. First protrusion; 3311. First sealing groove; 332. Second protrusion; 3321. Second sealing groove; 34. Adapter plate; 341. Second drain port; 35. Manifold cavity;

[0046] 41. First exhaust duct; 42. Second exhaust duct;

[0047] 5. Collection tank; 51. First drain outlet;

[0048] 6. Exhaust pipe. Detailed Implementation

[0049] To make the technical problem solved by this utility model, the technical solution adopted, and the technical effect achieved clearer, the technical solution of this utility model will be further described below with reference to the accompanying drawings and specific embodiments.

[0050] In the description of this utility model, unless otherwise explicitly specified and limited, the terms "connected," "linked," and "fixed" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model based on the specific circumstances.

[0051] Example 1:

[0052] like Figures 1-3 As shown, this embodiment provides a ventilation system for a semiconductor device. The semiconductor device has two vertically aligned process spaces, each containing a process unit. The upper and lower process units are vertically aligned. The ventilation system includes ventilation devices, with one ventilation device corresponding to each of the two vertically aligned process units. Each ventilation device connects vertically to the bottom mounting surface of the lower process space and the top mounting surface of the upper process space, covering the height of both process spaces. Each ventilation device has a ventilation port corresponding to a different process space, and the ventilation port is connected to its corresponding process unit, enabling the ventilation device to simultaneously draw gas from both process units.

[0053] This ventilation device, through its vertically integrated design, connects the mounting surfaces of the upper and lower aligned process units with a single structure, covering the height of both process spaces and providing independent exhaust ports for simultaneous gas extraction. While achieving centralized ventilation of the two-layer process units, it also serves as a structural support and space partition, significantly reducing the number of parts, improving space utilization, and enhancing equipment integration.

[0054] In one embodiment, the exhaust device connects the front and rear mounting surfaces of the two process spaces in the horizontal direction, covering the width of the two process spaces. This arrangement ensures that the height and width of the exhaust device are the same as the height and width of the two process spaces, allowing the exhaust device to act as a partition on one side of the process space, simultaneously drawing gas from the two process units while sealing off the same side of both process spaces.

[0055] In one embodiment, the thickness of the exhaust device is less than its width, and the thickness of the exhaust device is 1cm-10cm. Setting the thickness of the exhaust device to be much smaller than its width, i.e., making the exhaust device flat, occupies less space. By increasing the height of the exhaust device, the air volume is increased, while integrating the functions of partitioning and support.

[0056] For example, the thickness of the exhaust device is 3cm, 4cm, 5cm, or 6cm. Of course, in other embodiments, the thickness design of the exhaust device can be comprehensively considered based on the volume of waste gas to be centrally extracted and the width and height of the exhaust device, so as to meet the requirements for rapid extraction of waste gas from multiple process units.

[0057] Based on the thickness of the above-mentioned exhaust device, it can be used as part of the mounting plate in the process space and has its own exhaust function. Compared with setting up a separate mounting plate for the process space and then setting up a separate exhaust device, it saves space and cost, and can simplify the overall semiconductor equipment and make it more aesthetically pleasing.

[0058] In one embodiment, such as Figures 3-5 As shown, the exhaust device also includes at least one exhaust plate 1, with an exhaust chamber 11 formed inside the exhaust plate 1. An exhaust port is connected to the exhaust chamber 11, and an exhaust port 13 is provided at the top of the exhaust chamber 11. The exhaust port 13 is connected to an exhaust pipe 6, which is connected to the plant's waste gas treatment system or to the process unit. A fan is installed outside the exhaust pipe 6. Under the action of the fan, the gas in the process unit enters the exhaust chamber 11, and then enters the waste gas treatment system through the exhaust port 13 and the exhaust pipe 6. The waste gas treatment system treats the mixed waste gas and discharges it into the atmosphere; or it enters the process unit through the exhaust port 13 and the exhaust pipe 6 for purging, thus realizing recycling.

[0059] The number of exhaust plates 1 is set according to the layout of the process space inside the semiconductor equipment. For example, multiple process spaces are arranged at intervals along the horizontal direction; the exhaust plates 1 are arranged one-to-one with the process spaces arranged at intervals along the horizontal direction.

[0060] For example, the exhaust plate 1 is provided with two first exhaust ports 12 on the side near the process unit. The two first exhaust ports 12 are respectively provided for the process unit in the upper process space and the process unit in the lower process space. Both first exhaust ports 12 are connected to a first exhaust pipe 41, which is connected to the process unit.

[0061] The bottom of the exhaust plate 1 is provided with two second exhaust ports, which correspond to two process units arranged side by side. Both second exhaust ports are connected to a second exhaust pipe 42, which is connected to the process unit.

[0062] In one embodiment, the exhaust chamber 11 is provided with a gas-liquid separation structure, which is used to separate the liquid from the gas entering the exhaust chamber 11, so that the gas after liquid separation is discharged through the exhaust port 13. Since the exhaust gas may contain acid or alkali solutions, separating the acid or alkali solutions can reduce the risk of corrosion of components.

[0063] The bottom of the exhaust plate 1 is provided with a liquid collection tank 5, and the bottom of the liquid collection tank 5 is provided with a first drain port 51, which is connected to the exhaust chamber 11. The acid and alkali solutions separated in the exhaust chamber 11 fall to the bottom of the exhaust chamber 11 under the action of gravity, collect in the liquid collection tank 5, and are discharged through the first drain port 51.

[0064] For example, the bottom plate of the exhaust plate 1 is provided with a notch, and the liquid collection tank 5 is connected to the notch. The gas in the process unit enters the exhaust cavity 11 through the first exhaust port 12 and / or the second exhaust port. The acid hydrolysate separated by the gas-liquid separation structure flows to the bottom of the exhaust cavity 11 and accumulates in the liquid collection tank 5 before being discharged through the first drain port 51.

[0065] Two second exhaust ports are spaced apart at the bottom of the liquid collection tank 5, and two second exhaust pipes 42 enter the exhaust chamber 11 through the two second exhaust ports respectively.

[0066] In one embodiment, the gas-liquid separation structure includes a first condensing plate 21, which is disposed on two opposing inner walls of the exhaust chamber 11. The first condensing plates 21 on one inner wall and the first condensing plates 21 on the other inner wall are respectively staggered and inclined upward to form a connected exhaust channel. This arrangement allows the gas entering the exhaust chamber 11 to fully contact and condense with the first condensing plate 21; on the other hand, it extends the flow path of the gas in the exhaust chamber 11 to improve the condensation efficiency.

[0067] Of course, in other embodiments, the gas-liquid separation structure can also be a gas-liquid separator.

[0068] In one embodiment, the gas-liquid separation structure includes a second condenser plate 22, which is positioned directly opposite the exhaust port at the bottom of the exhaust chamber 11. The second condenser plate 22 includes a first plate 221 and a second plate 222, which are respectively inclined downwards at a preset angle. The second condenser plate 22 is positioned corresponding to the second exhaust port, just above the exhaust outlet of the second exhaust pipe 42. After the gas in the process unit enters the exhaust chamber 11 through the exhaust outlet of the second exhaust pipe 42, the acid hydrolysate generated by contacting and condensing with the second condenser plate 22 flows to the collection tank 5 under the guidance of the inclined first plate 221 and the second plate 222.

[0069] In one embodiment, a partition plate is provided inside the exhaust cavity 11 to separate gases flowing in from the exhaust ports corresponding to different process units. For semiconductor devices with different types of process units in two process spaces, in order to prevent cross-contamination of gases generated by different types of process units, the exhaust cavity 11 is divided into a first sub-cavity and a second sub-cavity by the partition plate. The first sub-cavity is connected to the first exhaust port 12 of the upper process unit, and the second sub-cavity is connected to the first exhaust port 12 of the lower process unit. Both the first and second sub-cavities are connected to the exhaust port 13.

[0070] In one embodiment, such as Figures 6-9 As shown, the exhaust system also includes a transfer box 3. Each branch port 31 of the transfer box 3 is connected to a process unit, and the confluence port 32 of the transfer box 3 is connected to the exhaust port. The transfer box 3 can simultaneously collect the gas from two adjacent process units, further improving the integration of exhaust and ventilation.

[0071] The adapter box 3 has a manifold 35, two branch ports 31, and at least one confluence port 32. The branch ports 31 are configured corresponding to the process units, and the confluence ports 32 are located on any wall of the manifold 35 to discharge the collected gas. Different confluence ports 32 are located on the same or different walls of the manifold 35. Each branch port 31 and the exhaust channel of its corresponding process unit are sealed together to ensure the airtightness between the branch port 31 and the exhaust channel, so as to guide the waste gas from each process unit into the manifold 35, and then collect it at the confluence port 32, and enter the exhaust chamber 11 through the first exhaust pipe 41 and the first exhaust port 12. The number of confluence ports 32 can be set according to the total gas discharge of the process units connected to the adapter box 3. If the total waste gas discharge of the two connected process units is large, two confluence ports 32 can be set to ensure that the waste gas can be discharged quickly; if the total waste gas discharge of the two connected process units is small, one confluence port 32 can be set. The location of the manifold 32 needs to be determined based on the location of the first exhaust port 12 connected to the adapter box 3.

[0072] For example, the adapter box 3 is located below the process unit and can serve as the bottom mounting surface of the process space. One adapter box 3 is used to collect the gas from the two process units. The adapter box 3 includes two branch ports 31 and one confluence port 32. The two branch ports 31 are spaced apart at one end of the adapter box 3, and the confluence port 32 is located at the other end. The two branch ports 31 are respectively connected to the exhaust channels of the two process units. The gas from the two process units enters the confluence chamber 35 through the exhaust channels and the branch ports 31 connected to them. After the gas enters the confluence chamber 35, it flows from one end of the confluence chamber 35 to the confluence port 32 at the other end, and then enters the first exhaust pipe 41 through the first exhaust port 12 into the exhaust chamber 11.

[0073] As the gas in the process unit flows upward, the exhaust channel of the process unit extends from the bottom to the top of the process unit to guide the exhaust gas located at the top of the process unit to the diversion port 31, and then into the manifold 35 through the diversion port 31.

[0074] In one embodiment, the cavity wall of the diversion port 31 has a first protrusion 331 protruding outward, the diversion port 31 passing through the first protrusion 331, and the end face of the first protrusion 331 has a first sealing groove 3311 for setting a first sealing ring. And / or, the cavity wall of the confluence port 32 has a second protrusion 332 protruding outward, the confluence port 32 passing through the second protrusion 332, and the end face of the second protrusion 332 has a second sealing groove 3321 for setting a second sealing gasket. By setting a first sealing gasket between the diversion port 31 and the exhaust channel of the electroplating chamber 201, the sealing performance of the connection between the diversion port 31 and the electroplating chamber 201 is ensured. Similarly, by setting a second sealing gasket between the confluence port 32 and the adapter of the first exhaust pipe 41 connected thereto, the sealing performance between the confluence port 32 and the first exhaust pipe 41 is ensured, preventing gas leakage.

[0075] In one embodiment, the transfer box 3 includes a support plate 33 and a transfer plate 34 disposed at the bottom of the support plate 33. The support plate 33 is used to support the process unit. A confluence cavity 35 is formed between the bottom wall of the support plate 33 and the transfer plate 34. The diversion port 31 connects the exhaust channel of the process unit and the confluence cavity 35. This arrangement allows the transfer box 3 to not only concentrate waste gas but also support it; it eliminates the need for a separate bottom mounting surface in the process space, thus achieving functional integration.

[0076] In one embodiment, the adapter box 3 is made of corrosion-resistant plastic.

[0077] In one embodiment, the adapter box 3 is integrally formed from a corrosion-resistant metal sheet. Since the gases in some process units are corrosive, the adapter box 3 is made of a corrosion-resistant metal sheet to extend its service life. The integral forming process is easier to manufacture and reduces manufacturing costs.

[0078] And / or, the inner wall of the manifold 35 is coated with an anti-corrosion layer. Since the manifold 35 is in direct contact with the gas, the adapter box 3 is made of corrosion-resistant metal plate, and an anti-corrosion layer is coated on the inner wall of the manifold 35 to reduce the probability of exhaust gas leakage caused by corrosion of the manifold 35.

[0079] For example, the anti-corrosion layer can be a high-performance polymer coating, such as a polytetrafluoroethylene coating.

[0080] Of course, in other embodiments, the anti-corrosion layer may be applied only to the inner wall of the manifold 35.

[0081] In one embodiment, the cross-section of the busbar 35 is a flat polygonal structure, and the extension direction of the busbar 35 is the same as the arrangement direction of the electroplating chamber 201. The flat structure design reduces the space occupied by the adapter box 3 in the semiconductor equipment, while the polygonal structure can meet the connection of multiple process units with the same and / or different arrangement directions. This reduces the volume occupied by a single adapter box 3, while maximizing the number of process units connected by a single adapter box 3, thereby reducing the number of adapter boxes 3 required in the semiconductor equipment and saving space inside the semiconductor equipment.

[0082] For example, the cross-section of the manifold 35 is configured as a quadrilateral structure. Of course, in other embodiments, the cross-section of the manifold 35 may also be a hexagonal structure.

[0083] In one embodiment, the manifold 32 is located on the top wall of the manifold 35. Since gas generally flows upward, placing the manifold 32 on the top wall of the manifold 35 allows for faster gas discharge.

[0084] For example, two branch ports 31 and one confluence port 32 are all located on the top cavity wall of the confluence cavity 35. The gas entering the confluence cavity 35 through the branch ports 31 flows to the confluence port 32 under the action of suction pressure, and then enters the first exhaust pipe 41 from the confluence port 32.

[0085] In one embodiment, the flow cross-section of the manifold 35 gradually decreases from the end where the branch port 31 is located to the end where the confluence port 32 is located. By gradually narrowing the flow cross-section along the flow direction, a continuous accelerating flow field is formed on the path from the branch port 31 to the confluence port 32, which significantly improves the fluid kinetic energy and reduces the static pressure, while enhancing the wall shear force; its smooth transition characteristics can suppress flow separation and eddy generation, reduce energy loss, and maintain flow stability; finally, a high-speed converging flow is achieved at the confluence port 32, allowing the exhaust gas to quickly enter the exhaust plate 1.

[0086] Of course, in other embodiments, the confluence port 32 is located on the opposite cavity wall of the cavity wall where the branch port 31 is located. Placing the confluence port 32 on the cavity wall directly opposite the branch port 31 can cause the gas to flow out of the branch port 31 and directly impact the opposite cavity wall to form a main channel that runs through the center of the confluence cavity 35, thereby inducing a symmetrical and stable vortex structure on both sides of the cavity and effectively reducing the flow dead zone.

[0087] In one embodiment, the bottom of the adapter plate 34 is provided with a second drain port 341. Because the temperature inside the electroplating chamber 201 is very high, after the waste gas inside the electroplating chamber 201 enters the manifold 35 through the diversion port 31, the temperature inside the manifold 35 is lower, and the acidic or alkaline gases contained in the gas will condense into acidic or alkaline solutions. The acidic or alkaline solutions are quickly discharged through the second drain port 341 to avoid corrosion of the structure of the downstream section of the exhaust device.

[0088] In one embodiment, the second drain port 341 is located at the lowest point of the manifold 35. By placing the second drain port 341 at the lowest point of the manifold 35, the condensed acid and alkali solutions from various locations within the manifold 35 will accumulate at the lowest point, which is more conducive to the discharge of the acid and alkali solutions.

[0089] Example 2:

[0090] Semiconductor equipment includes at least one of electroplating equipment, cleaning equipment, and polishing equipment. This embodiment uses electroplating equipment for detailed description, specifically the application of the exhaust system provided in Embodiment 1 to electroplating equipment.

[0091] like Figures 10-12 As shown, this embodiment provides a semiconductor device, including a rack 100, process units, and the ventilation system provided in Embodiment 1. The rack 100 has at least two layers of partition frames stacked vertically. A ventilation device is installed on the side of the partition frames, forming a process space together with the mounting surfaces of the partition frames. The process units are located within the process space. One ventilation device covers two layers of partition frames and simultaneously draws in gases from both layers of process units.

[0092] This semiconductor equipment, through a vertically integrated design of the exhaust system, simultaneously achieves three functions in a single structure: process space enclosure within a two-layer partition frame, synchronous gas extraction, and rigid equipment support. This eliminates the structural redundancy of traditional multi-layer independent exhaust ducts and auxiliary supports, reducing the space occupied by the semiconductor equipment and improving installation efficiency and layout adaptability.

[0093] In one embodiment, each layer of process space is provided with at least one set of process units, and each set includes two process units arranged side by side. The two process units are connected to the first exhaust port 12 through a junction box 3, so as to realize the centralized extraction and exhaust of gas from the two process units into the exhaust chamber 11 through the junction box 3.

[0094] In one embodiment, the process unit includes an electroplating chamber 201, and the process space is an electroplating space. The exhaust device can simultaneously exhaust the electroplating chambers 201 of different layers of electroplating space through different exhaust ports to extract the waste gas generated in the electroplating chambers 201 during and / or non-electroplating periods to the outside. One exhaust device can exhaust air from at least two sets of electroplating chambers 201 in two layers of electroplating space, thereby concentrating the waste gas generated in at least two sets of electroplating chambers 201 during and / or non-electroplating periods into the exhaust chamber 11 and discharging it through the exhaust port 13.

[0095] For example, the exhaust plate 1 is provided with two first exhaust ports 12 on the side near the electroplating chamber 201. The two first exhaust ports 12 are respectively provided for a set of electroplating chambers 201 in the upper electroplating space and a set of electroplating chambers 201 in the lower electroplating space. Both first exhaust ports 12 are connected to a first exhaust pipe 41, which is connected to the electroplating chamber 201.

[0096] Both the upper and lower electroplating spaces are equipped with transfer boxes 3 at their bottoms. Each transfer box 3 has two electroplating chambers 201. The exhaust channels of the two electroplating chambers 201 are sealed and connected to their corresponding branch ports 31 to ensure the airtightness between the branch ports 31 and the exhaust channels. This guides the waste gas from each electroplating chamber 201 to the manifold 35, and then collects it at the manifold 32. The waste gas then enters the exhaust chamber 11 through the first exhaust pipe 41 and the first exhaust port 12. The acid and alkali solutions formed by the condensation of some of the gas entering the manifold 35 are discharged through the second drain port 341. The waste gas entering the exhaust chamber 11 condenses upon contact with the first condenser plate 21 inside the exhaust chamber 11. The resulting acidic liquid falls to the bottom of the exhaust chamber 11, accumulates in the collection tank 5, and is discharged through the first drain port 51.

[0097] In one embodiment, the partition frame has three layers. An exhaust device covers one side of the top and middle partition frames, forming two electroplating spaces. The bottom mounting surface of the bottom partition frame is equipped with an electroplating tank 202 that provides electroplating solution to the electroplating chambers 201. The exhaust device is connected to the electroplating tank 202 and can exhaust air from the electroplating tank 202 to remove gases evaporating during and / or outside the electroplating process. The same exhaust device can not only exhaust the waste gas generated by the two sets of electroplating chambers 201 it covers, but also exhaust the gases evaporating from the electroplating tank 202 that provides electrolyte to the two sets of electroplating chambers 201. This allows one exhaust plate 1 to simultaneously exhaust waste gas from both sets of electroplating chambers 201 and electroplating tanks 202, further improving space utilization, especially suitable for high-density production line layouts. Simultaneously, the high-temperature process waste gas mixes with the low-temperature bath liquid evaporating gas, reducing the temperature of the mixed waste gas and lowering the load on the subsequent cooling system.

[0098] In one embodiment, two electroplating tanks 202 are provided. One electroplating tank 202 provides electroplating solution to a set of electroplating chambers 201 located in the lower electroplating space, and the other electroplating tank 202 provides electroplating solution to a set of electroplating chambers 201 located in the upper electroplating space. A ventilation device is connected to the two electroplating tanks 202 and can simultaneously ventilate both electroplating tanks 202. Each set of electroplating chambers 201 in each electroplating space is equipped with an independent electroplating tank 202, ensuring that each set of electroplating chambers 201 can be provided with sufficient electrolyte. At the same time, a single ventilation device simultaneously extracts exhaust gas from both sets of electroplating chambers 201 and volatile gases from both electroplating tanks 202, eliminating the risk of exhaust gas stagnation in the layered space.

[0099] For example, the bottom of the exhaust plate 1 is provided with two second exhaust ports, which correspond to two electroplating tanks 202 arranged side by side. Both second exhaust ports are connected to a second exhaust pipe 42, which is connected to the electroplating tank 202.

[0100] While the electroplating tank 202 provides electrolyte to the electroplating chamber 201, some gas will evaporate in the electroplating tank 202. The evaporated gas enters the exhaust chamber 11 through the second exhaust pipe 42 and directly contacts the second condenser plate 22 for heat exchange. The condensation produces acid and alkali solutions. The separated dry gas enters the waste gas treatment system through the exhaust port 13 and exhaust pipe 6.

[0101] The semiconductor equipment provided in this embodiment is an electroplating device used in electroplating processes. The exhaust system can centrally extract and exhaust the waste gas generated in the electroplating chamber 201 during or outside of electroplating, as well as the gas volatilized from the electroplating tank 202. The dried gas after condensation in the exhaust chamber 11 enters the exhaust pipe 6 through the exhaust port 13, and then enters the plant's waste gas treatment system for treatment before being discharged into the atmosphere, reducing environmental pollution. At the same time, it improves space utilization and installation efficiency, making the layout of the semiconductor equipment more adaptable.

[0102] Example 3:

[0103] Semiconductor equipment includes at least one of electroplating equipment, cleaning equipment, and polishing equipment. This embodiment uses cleaning equipment for detailed description, specifically the application of the exhaust system provided in Embodiment 1 to cleaning equipment.

[0104] This embodiment provides a semiconductor device, including a rack, process units, and the exhaust system provided in Embodiment 1. The rack has at least two layers of vertically stacked partition frames. An exhaust device is mounted on the side of the partition frames, forming a process space together with the mounting surfaces of the partition frames. The process units are located within the process space. One exhaust device covers two layers of partition frames and simultaneously draws in gases from both layers of process units.

[0105] This semiconductor equipment, through a vertically integrated design of the exhaust system, simultaneously achieves three functions in a single structure: process space enclosure within a two-layer partition frame, synchronous gas extraction, and rigid equipment support. This eliminates the structural redundancy of traditional multi-layer independent exhaust ducts and auxiliary supports, reducing the space occupied by the semiconductor equipment and improving installation efficiency and layout adaptability.

[0106] In one embodiment, each layer of process space is provided with at least one set of process units, and each set includes two process units arranged side by side. The two process units are connected to the first exhaust port through a junction box, so as to realize the centralized extraction and exhaust of gas from the two process units into the exhaust chamber through the junction box.

[0107] In one embodiment, the process unit includes a cleaning chamber, the process space is a cleaning space, and the exhaust device can simultaneously exhaust the cleaning chambers of different layers of cleaning space through different exhaust ports to extract the waste gas generated in the cleaning chamber during and / or non-cleaning periods to the outside.

[0108] In wafer cleaning processes, various cleaning solutions are typically used, including acidic solutions such as nitric acid and hydrofluoric acid, and alkaline solutions such as sodium hydroxide and ammonia. These processes usually generate a significant amount of waste gas. The semiconductor equipment provided in this embodiment is a cleaning device. By incorporating the ventilation system described in Embodiment 1 within the cleaning equipment, the ventilation system extracts the waste gas generated during the cleaning process in the cleaning chamber. The system separates the acidic and alkaline solutions from the gas in the extracted waste gas, and the dried gas is discharged through an exhaust pipe to a waste gas treatment system for further treatment before being released. This reduces environmental pollution from the waste gas. Simultaneously, it reduces the space occupied by the semiconductor equipment, improving installation efficiency and layout adaptability.

[0109] It should be noted that the exhaust principle of the ventilation device in the cleaning equipment is basically the same as that in the electroplating equipment, and the frame and process space settings in the cleaning equipment are the same as those in the electroplating equipment, so they will not be repeated here. The difference lies in that the cleaning chambers of different layers are connected to their corresponding first exhaust ports. The second exhaust port at the bottom of the exhaust plate is not used in the cleaning equipment and can be blocked. For the specific structure of the cleaning chambers and other functional mechanisms in the cleaning equipment, please refer to existing technology.

[0110] Example 4:

[0111] Semiconductor equipment includes at least one of electroplating equipment, cleaning equipment, and polishing equipment. This embodiment uses an integrated equipment that integrates electroplating and cleaning functions for detailed description, specifically the application of the exhaust system provided in Embodiment 1 to an integrated equipment that integrates electroplating and cleaning functions.

[0112] This embodiment provides a semiconductor device, including a rack, process units, and the exhaust system provided in Embodiment 1. The rack has at least two layers of vertically stacked partition frames. An exhaust device is mounted on the side of the partition frames, forming a process space together with the mounting surfaces of the partition frames. The process units are located within the process space. One exhaust device covers two layers of partition frames and simultaneously draws in gases from both layers of process units.

[0113] This semiconductor equipment, through a vertically integrated design of the exhaust system, simultaneously achieves three functions in a single structure: process space enclosure within a two-layer partition frame, synchronous gas extraction, and rigid equipment support. This eliminates the structural redundancy of traditional multi-layer independent exhaust ducts and auxiliary supports, reducing the space occupied by the semiconductor equipment and improving installation efficiency and layout adaptability.

[0114] In one embodiment, each layer of process space is provided with at least one set of process units, and each set includes two process units arranged side by side. The two process units are connected to the first exhaust port through a junction box, so as to realize the centralized extraction and exhaust of gas from the two process units into the exhaust chamber through the junction box.

[0115] In one embodiment, the process unit includes an electroplating chamber and a cleaning chamber. The cleaning chamber is located in the upper process space, so that the upper process space forms a cleaning space. The electroplating chamber is located in the lower process space, so that the lower process space forms an electroplating space. An exhaust system can exhaust air from the cleaning chamber through an exhaust port corresponding to the cleaning chamber to remove waste gas generated during and / or non-cleaning periods. Simultaneously, the exhaust system can also exhaust air from the electroplating chamber through an exhaust port corresponding to the electroplating chamber to remove waste gas generated during and / or non-electroplating periods.

[0116] In one embodiment, the partition frame has three layers. An exhaust system covers one side of the top and middle partition frames, forming a cleaning space and an electroplating space, respectively. The bottom mounting surface of the bottom partition frame has an electroplating tank that provides electroplating solution to the electroplating chamber. The exhaust system is connected to the electroplating tank and can exhaust air from the electroplating tank to remove gases volatilized during and / or outside the electroplating process. The electroplating tank, located on the bottom mounting surface of the bottom partition frame, provides electroplating solution to the electroplating chamber located in the lower electroplating space. The first exhaust port of the exhaust plate corresponding to the cleaning space is connected to the cleaning chamber, and the first exhaust port corresponding to the electroplating space is connected to the electroplating chamber. The second exhaust port at the bottom of the exhaust plate is connected to the electroplating tank. The exhaust system can simultaneously exhaust waste gas generated in the cleaning chamber, waste gas generated in the electroplating chamber, and gases volatilized in the electroplating tank.

[0117] To prevent the volatile gases of cleaning solutions such as hydrogen peroxide and sulfuric acid in the cleaning chamber from spreading and contaminating the electroplating chamber, the exhaust chamber is divided into a first sub-chamber and a second sub-chamber. The exhaust gas generated in the cleaning chamber enters the first sub-chamber through the first exhaust port corresponding to the cleaning space, and the exhaust gas generated in the electroplating chamber enters the second sub-chamber through the first exhaust port corresponding to the electroplating space. The gas volatilized in the electroplating tank enters the second sub-chamber through the second exhaust port. Finally, the dried gas in both the first and second sub-chambers is discharged through the exhaust port.

[0118] The semiconductor equipment provided in this embodiment integrates electroplating and cleaning processes into a single device. The exhaust system can centrally extract waste gas generated in the cleaning chamber located in the upper process space, waste gas generated in the electroplating chamber located in the lower process space, and volatile gases emitted from the electroplating tank located in the bottom partition frame, reducing environmental pollution from waste gas. Simultaneously, it reduces the space occupied by the semiconductor equipment, improving installation efficiency and layout adaptability.

[0119] Example 5:

[0120] Semiconductor equipment includes at least one of electroplating equipment, cleaning equipment, and polishing equipment. This embodiment uses polishing equipment for detailed description, specifically the application of the exhaust system provided in Embodiment 1 to polishing equipment.

[0121] This embodiment provides a semiconductor device, including a rack, process units, and the exhaust system provided in Embodiment 1. The rack has at least two layers of vertically stacked partition frames. An exhaust device is mounted on the side of the partition frames, forming a process space together with the mounting surfaces of the partition frames. The process units are located within the process space. One exhaust device covers two layers of partition frames and simultaneously draws in gases from both layers of process units.

[0122] This semiconductor equipment, through a vertically integrated design of the exhaust system, simultaneously achieves three functions in a single structure: process space enclosure within a two-layer partition frame, synchronous gas extraction, and rigid equipment support. This eliminates the structural redundancy of traditional multi-layer independent exhaust ducts and auxiliary supports, reducing the space occupied by the semiconductor equipment and improving installation efficiency and layout adaptability.

[0123] In one embodiment, each layer of process space is provided with at least one set of process units, and each set includes two process units arranged side by side. The two process units are connected to the first exhaust port through a junction box, so as to realize the centralized extraction and exhaust of gas from the two process units into the exhaust chamber through the junction box.

[0124] In one embodiment, the process unit includes a polishing cavity, the process space is a polishing space, and the exhaust device can simultaneously exhaust air from different layers of the polishing cavity through different exhaust ports to extract the air in the polishing cavity so that the suction cup can adsorb the wafer.

[0125] In the wafer polishing process, the wafer is first fixed, and then polished by polishing equipment. When fixing the wafer, a suction cup is typically used for adsorption. A fixing tube is installed inside the polishing chamber, and a cavity is provided at the top of the fixing tube. The suction cup is inserted into the cavity, and when adsorbing the wafer, the air in the cavity is extracted and blown onto the wafer.

[0126] The semiconductor device provided in this embodiment is a polishing device. By setting the exhaust system provided in Embodiment 1 in the polishing device, the exhaust device extracts the air in the cavity of the fixed tube in the polishing chamber to adsorb the wafer. This enables one exhaust device to extract the gas in the cavity of the fixed tube in the polishing chamber located in different layers, and enables multiple wafers in the polishing chamber in different layers to be adsorbed and fixed at the same time. This reduces the space occupied by the semiconductor device and improves the installation efficiency and layout adaptability.

[0127] It should be noted that the exhaust principle of the ventilation device in polishing equipment is basically the same as that in electroplating equipment, and the frame and process space setup in polishing equipment are the same as in electroplating equipment, so they will not be repeated here. The difference lies in that the polishing chambers of different layers are connected to their corresponding first exhaust ports. The second exhaust port at the bottom of the exhaust plate is not used in polishing equipment and can be sealed by plugging. Furthermore, there is no need to install a gas-liquid separation structure in the exhaust plate. For the specific structure of the polishing chambers and other functional mechanisms in the polishing equipment, please refer to existing technologies.

[0128] This embodiment illustrates the application of a ventilation system in semiconductor equipment. It should be noted that the above is only a partial list of applications, and this embodiment is not limited to the application of the ventilation system in other semiconductor equipment.

[0129] The above description is only a preferred embodiment of this utility model. For those skilled in the art, there will be changes in the specific implementation method and application scope based on the idea of ​​this utility model. The content of this specification should not be construed as a limitation of this utility model.

Claims

1. A ventilation system for a semiconductor device, the semiconductor device having two layers of process space in a vertical direction, each layer of process space having a process unit, and the upper and lower process units being aligned in the vertical direction, characterized in that, The ventilation system includes a ventilation device. Two vertically aligned process units are each provided with one exhaust device, and the exhaust device is connected to the bottom mounting surface of the lower process space and the top mounting surface of the upper process space in the vertical direction, covering the height of the two process spaces. The exhaust device is equipped with exhaust ports corresponding to different layers of process space. The exhaust ports are connected to the corresponding process units so that the exhaust device can simultaneously draw gas from two layers of process units.

2. The ventilation system according to claim 1, characterized in that, The exhaust device connects the front and rear mounting surfaces of the two process spaces in the horizontal direction, covering the width of the two process spaces.

3. The ventilation system according to claim 1 or 2, characterized in that, The thickness of the exhaust device is less than the width of the exhaust device, and the thickness of the exhaust device is 1cm-10cm; Alternatively, the thickness of the exhaust device may be 3cm, 4cm, 5cm, or 6cm.

4. The ventilation system according to claim 1 or 2, characterized in that, The exhaust device further includes at least one exhaust plate (1), the exhaust plate (1) forms an exhaust cavity (11) inside, the exhaust port is connected to the exhaust cavity (11), and the exhaust cavity (11) is provided with an exhaust port (13) at the top.

5. The ventilation system according to claim 4, characterized in that, The exhaust chamber (11) is provided with a gas-liquid separation structure, which is used to separate the liquid in the gas entering the exhaust chamber (11); The bottom of the exhaust plate (1) is provided with a liquid collection tank (5), and the bottom of the liquid collection tank (5) is provided with a first drain port (51), and the first drain port (51) is connected to the exhaust cavity (11).

6. The ventilation system according to claim 5, characterized in that, The gas-liquid separation structure includes a first condenser plate (21), which is disposed on two opposite inner walls of the exhaust cavity (11). The first condenser plate (21) on one inner wall and the first condenser plate (21) on the other inner wall are respectively staggered and inclined upward to form a connected exhaust channel. And / or, the gas-liquid separation structure includes a second condenser plate (22), which is disposed opposite to the exhaust port at the bottom of the exhaust chamber (11); the second condenser plate (22) includes a first plate (221) and a second plate (222) disposed at a preset angle and respectively inclined downward.

7. The ventilation system according to claim 4, characterized in that, The exhaust chamber (11) is provided with a partition plate, which is used to separate the gas flowing in from the exhaust ports corresponding to different process units.

8. The ventilation system according to claim 1 or 2, characterized in that, The exhaust device also includes a junction box (3), each branch port (31) of the junction box (3) is connected to one of the process units, and the confluence port (32) of the junction box (3) is connected to the exhaust port.

9. A semiconductor device, characterized in that, include: The rack (100) has at least two layers of partition frames stacked vertically; The ventilation system as described in any one of claims 1-8, wherein the ventilation device is installed on the side of the partition frame, and together with the mounting surface of the partition frame, forms a process space; The process unit is located within the process space; One of the aforementioned exhaust devices covers two layers of partition frames and simultaneously draws in gas from both process units.

10. The semiconductor device according to claim 9, characterized in that, Each layer of the process space is provided with at least one set of process units, and each set includes two process units arranged side by side.

11. The semiconductor device according to claim 9 or 10, characterized in that, The semiconductor equipment includes at least one of electroplating equipment, cleaning equipment, and polishing equipment.

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