High-side driver circuit and short-circuit protection circuit therefor
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- NANJING HENGLI INTELLIGENT TECH CO LTD
- Filing Date
- 2025-08-12
- Publication Date
- 2026-07-24
Smart Images
Figure CN224555593U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of integrated circuit technology, and in particular to a high-end driving circuit and its short-circuit protection circuit. Background Technology
[0002] Current high-side drive circuits are generally implemented using PMOS (positive channel metal-oxide-semiconductor) transistors. However, given the relatively high cost of PMOS transistors, some high-side drive circuits also utilize N-channel switching devices. When the output terminal of the high-side drive circuit is short-circuited to ground on the side connected to the load, the current flowing through the N-channel switching device is large, which can easily damage the N-channel switching device and affect the normal operation of the circuit. Utility Model Content
[0003] To address the technical problem in existing technologies where the large current flowing through N-channel switching devices during grounding short circuits easily damages them and affects normal circuit operation, this invention provides a high-end drive circuit and its short-circuit protection circuit, thus solving the aforementioned technical problem.
[0004] To address the aforementioned technical problems, this utility model provides a short-circuit protection circuit for a high-side drive circuit. The high-side drive circuit includes an N-channel switching device, with its drain and source connected to the input and output terminals of the high-side drive circuit, respectively. The short-circuit protection circuit includes: a shunt module, the trigger terminal of which is connected to the source of the N-channel switching device, the input terminal of which is connected to the gate of the N-channel switching device, and the output terminal of which is connected to the output terminal of the high-side drive circuit. The input and output terminals of the shunt module are connected based on a first current at the trigger terminal, where the first current is greater than or equal to a conduction threshold of the shunt module; and a comparator module, the first input terminal of which is connected to the input terminal of the high-side drive circuit, the second input terminal of which is connected to the output terminal of the high-side drive circuit, and the output terminal of which is connected to a microcontroller to provide feedback to the microcontroller on the voltage comparison result between the input and output terminals of the high-side drive circuit. The microcontroller generates a control signal based on the voltage comparison result to control the on and off states of the N-channel switching device.
[0005] According to one embodiment of the present invention, the shunt module includes: a first transistor, the collector of the first transistor being connected to the input terminal of the shunt module, the emitter of the first transistor being connected to the output terminal of the shunt module, and the base of the first transistor being connected to the trigger terminal of the shunt module; a current sensing resistor, one end of the current sensing resistor being connected to the trigger terminal of the shunt module, and the other end of the current sensing resistor being connected to the output terminal of the high-side drive circuit, wherein the conduction threshold of the shunt module is the conduction threshold of the first transistor.
[0006] According to one embodiment of the present invention, the comparison module includes: a first input resistor, one end of which is connected to a first input terminal of the comparison module; a second input resistor, one end of which is connected to a second input terminal of the comparison module; and a comparator, the inverting input terminal of which is connected to the other end of the first input resistor, the non-inverting input terminal of which is connected to the other end of the second input resistor, and the output terminal of which is connected to the output terminal of the comparison module.
[0007] This utility model also provides a high-end driving circuit, including: a short-circuit protection circuit and an N-channel switching device as described above; a driving power supply module, the output terminal of which is connected to the gate and source of the N-channel switching device; and a control module, which is connected to the microcontroller and the driving power supply module respectively. The control module inputs the control signal from the microcontroller to the driving power supply module to control the bias voltage provided by the driving power supply module to the gate and source of the N-channel switching device, thereby realizing the turn-on and turn-off control of the N-channel switching device.
[0008] According to one embodiment of the present invention, the driving power module includes: a charge pump submodule located at the input terminal of the driving power module; and a voltage regulator submodule located at the output terminal of the driving power module, the voltage regulator submodule being connected to the charge pump submodule to stabilize the output voltage of the charge pump submodule.
[0009] According to one embodiment of the present invention, the charge pump submodule includes: a pump capacitor, the input terminal of which is connected to an external power supply; a first diode, the anode of which is connected to the output terminal of the pump capacitor; a second diode, the cathode of which is connected to the anode of the first diode; and an output capacitor, one end of which is connected to the cathode of the first diode and the other end of which is connected to the anode of the second diode. The voltage regulator submodule is coupled to the output capacitor.
[0010] According to one embodiment of the present invention, the voltage regulator submodule includes: a second transistor, the collector of which is connected to the output terminal of the charge pump submodule, a bias resistor connected between the base and collector of the second transistor, and the emitter of the second transistor connected to the gate of the N-channel switching device; a Zener diode, the anode of which is connected to the output terminal of the high-side drive circuit, the cathode of which is connected to the base of the second transistor, the collector of the first transistor connected to the emitter of the second transistor, the emitter of the first transistor connected to the anode of the Zener diode, and the signal output terminal of the control module connected to the connection point between the base of the second transistor and the cathode of the Zener diode.
[0011] According to one embodiment of the present invention, the voltage regulator submodule further includes a third transistor complementary to the second transistor, the emitter of the third transistor being connected to the emitter of the second transistor, the collector of the third transistor being connected to the positive terminal of the Zener diode, and the base of the third transistor being connected to the connection point.
[0012] According to one embodiment of the present invention, a push-pull drive module is further connected between the drive power module and the control module. The push-pull drive module includes: a complementary fourth transistor and a fifth transistor, the collector of the fourth transistor being connected to the signal output terminal of the control module, the collector of the fifth transistor being connected to the Zener diode, and the emitters of the fourth and fifth transistors being connected to the connection point; and a third resistor, one end of which is connected between the emitters of the fourth and fifth transistors, and the other end of which is connected between the bases of the fourth and fifth transistors.
[0013] According to one embodiment of the present invention, the control module includes: a sixth transistor, the base of which is used to receive the control signal, and the emitter of which is grounded through a grounding resistor; and a third diode, the cathode of which is connected to the collector of the sixth transistor, and the anode of which is connected to the drive power supply module to provide feedback on the control signal.
[0014] Based on the above technical solution, the technical effects that this utility model can achieve are as follows: 1. The short-circuit protection circuit for high-side drive circuits of this utility model, by setting up a shunt module and a comparator module, when there is a ground short circuit on the side of the high-side drive circuit output terminal connected to the load, the current at the trigger terminal of the shunt module will increase and reach the first current, causing the input and output terminals of the shunt module to conduct and causing the N-channel switching device to enter the saturation region, so that the comparator module can detect the increase in voltage difference between the input and output terminals of the high-side drive circuit. When the microcontroller receives the voltage difference increase signal fed back by the comparator module, it can generate a control signal, thereby controlling the N-channel switching device to turn off to achieve short-circuit protection, avoid damage to the N-channel switching device, and ensure the continuous and stable operation of the circuit; 2. The high-end drive circuit of this utility model, by setting a short-circuit protection circuit that cooperates with the N-channel switching device, can avoid damage to the N-channel switching device and ensure the continuous and stable operation of the circuit. 3. By setting a voltage regulator submodule in the drive power module to stabilize the output voltage of the charge pump submodule, the output voltage of the drive power module can be kept stable when the output voltage of the charge pump submodule is unstable, thus ensuring the normal operation of the high-end drive circuit. 4. Furthermore, by setting a third transistor that complements the second transistor in the voltage regulator submodule, the output voltage can be better stabilized through the synergistic effect of the two transistors. 5. By setting a push-pull drive module between the drive power module and the control module, when the control circuit provides a high level, the fourth and fifth transistors are in a high-impedance state. The complementary fourth and fifth transistors can also act as amplifiers, increasing the overcurrent capability of the high-side drive circuit. Attached Figure Description
[0015] Figure 1 This is a block diagram of a short-circuit protection circuit for a high-end drive circuit according to an embodiment of the present invention. Figure 2 This is a schematic diagram of the structure of a current splitting module according to an embodiment of the present invention; Figure 3 This is a schematic diagram of the structure of the comparison module according to an embodiment of the present invention; Figure 4 This is a schematic diagram of the high-end drive circuit according to an embodiment of the present invention; Figure 5 This is a schematic diagram of the high-end drive circuit of a specific embodiment of the present invention. Detailed Implementation
[0016] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. The following description of at least one exemplary embodiment is merely illustrative and is in no way intended to limit the present utility model or its application or use. All other embodiments obtained by those skilled in the art based on the embodiments of the present utility model without creative effort are within the scope of protection of the present utility model.
[0017] It should be noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the exemplary embodiments according to this application. As used herein, the singular form is intended to include the plural form as well, unless the context clearly indicates otherwise. Furthermore, it should be understood that when the terms "comprising" and / or "including" are used in this specification, they indicate the presence of features, steps, operations, devices, components, and / or combinations thereof.
[0018] Unless otherwise specifically stated, the relative arrangement, numerical expressions, and values of the components and steps described in these embodiments do not limit the scope of this invention. It should also be understood that, for ease of description, the dimensions of the various parts shown in the drawings are not drawn to actual scale. Techniques, methods, and devices known to those skilled in the art may not be discussed in detail, but where appropriate, such techniques, methods, and devices should be considered part of the specification. In all examples shown and discussed herein, any specific values should be interpreted as merely exemplary and not as limitations. Therefore, other examples of exemplary embodiments may have different values. It should be noted that similar reference numerals and letters in the following drawings denote similar items; therefore, once an item is defined in one drawing, it need not be further discussed in subsequent drawings.
[0019] In the description of this utility model, it should be understood that the directional terms such as "front, back, up, down, left, right", "horizontal, vertical, horizontal" and "top, bottom" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this utility model and simplifying the description. Unless otherwise stated, these directional terms do not indicate or imply that the device or element referred to must have a specific orientation or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation on the scope of protection of this utility model. The directional terms "inner" and "outer" refer to the inner and outer contours of each component itself.
[0020] For ease of description, spatial relative terms such as "above," "on top of," "on the upper surface of," "above," etc., are used herein to describe the spatial positional relationship of a device or feature as shown in the figures to other devices or features. It should be understood that spatial relative terms are intended to encompass different orientations in use or operation beyond the orientation of the device as described in the figures. For example, if the device in the figures were inverted, a device described as "above" or "on top of" other devices or structures would subsequently be positioned as "below" or "under" other devices or structures. Thus, the exemplary term "above" can include both "above" and "below." The device may also be positioned in other different ways (rotated 90 degrees or in other orientations), and the spatial relative descriptions used herein will be interpreted accordingly.
[0021] Furthermore, it should be noted that the use of terms such as "first" and "second" to define components is merely for the purpose of distinguishing the corresponding components. Unless otherwise stated, the above terms have no special meaning and therefore cannot be construed as limiting the scope of protection of this utility model.
[0022] like Figure 1As shown, this embodiment provides a short-circuit protection circuit for a high-side drive circuit. The high-side drive circuit includes an N-channel switching device 10. The drain and source of the N-channel switching device 10 are respectively connected to the input terminal B+ and the output terminal Uout of the high-side drive circuit. The output terminal Uout of the high-side drive circuit is grounded through a resistive or inductive load. The short-circuit protection circuit includes a shunt module 20 and a comparator module 30. The trigger terminal 21 of the shunt module 20 is connected to the source of the N-channel switching device 10, the input terminal 22 of the shunt module 20 is connected to the gate of the N-channel switching device 10, and the output terminal 23 of the shunt module 20 is connected to the output terminal of the high-side drive circuit. Uout is connected, the input terminal 22 and output terminal 23 of the shunt module 20 are connected based on the first current of the trigger terminal 21, and the first current is greater than or equal to the conduction threshold of the shunt module 20; the first input terminal 31 of the comparison module 30 is connected to the input terminal B+ of the high-side drive circuit, the second input terminal 32 of the comparison module 30 is connected to the output terminal Uout of the high-side drive circuit, and the output terminal of the comparison module 30 is connected to the microcontroller 40 to feed back the voltage comparison result between the input terminal B+ and the output terminal Uout of the high-side drive circuit to the microcontroller 40. The microcontroller 40 generates a control signal based on the voltage comparison result to control the conduction and turn-off of the N-channel switching device 10. The load can be grounded through a filter capacitor or directly grounded; the N-channel switching device 10 can be an NMOS transistor, or it can be an N-channel IGBT (Insulated Gate Bipolar Transistor), SiC MOS (Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistor), or other N-channel switching devices 10, and this embodiment does not limit it.
[0023] It is understood that the short-circuit protection circuit of this utility model embodiment, by setting up a shunt module 20 and a comparator module 30, when there is a short circuit to ground on the side of the high-side drive circuit output terminal Uout connected to the load, the current of the trigger terminal 21 of the shunt module 20 will increase and reach the first current, causing the input terminal 22 and the output terminal 23 of the shunt module 20 to conduct, and causing the N-channel switching device 10 to enter the saturation region, so that the comparator module 30 can detect the increase in the voltage difference between the input terminal B+ and the output terminal Uout of the high-side drive circuit. When the microcontroller 40 receives the voltage difference increase signal fed back by the comparator module 30, it can generate a control signal, thereby controlling the N-channel switching device 10 to turn off to achieve short-circuit protection, avoid damage to the N-channel switching device 10, and ensure the continuous and stable operation of the circuit.
[0024] like Figure 2As shown, in a preferred embodiment, the shunt module 20 may include a first transistor Q2 and a current-sensing resistor R1. The collector of the first transistor Q2 is connected to the input terminal of the shunt module 20, the emitter of the first transistor Q2 is connected to the output terminal of the shunt module 20, and the base of the first transistor Q2 is connected to the trigger terminal 21 of the shunt module 20. One end of the current-sensing resistor R1 is connected to the trigger terminal 21 of the shunt module 20, and the other end of the current-sensing resistor R1 is connected to the output terminal of the high-side drive circuit. In this case, the conduction threshold of the shunt module 20 is the conduction threshold of the first transistor Q2. In the figure, Q1 represents an NMOS transistor, i.e., an N-channel switching device 10.
[0025] Preferably, a current-limiting resistor R2 can be connected between the base of the first transistor Q2 and the trigger terminal 21 of the shunt module 20 to prevent the excessive current flowing through the base from burning out the first transistor Q2.
[0026] As shown in Figure 3, in a preferred embodiment, the comparison module 30 includes a first input resistor R3, a second input resistor R4, and a comparator U1. One end of the first input resistor R3 is connected to the first input terminal of the comparison module 30; one end of the second input resistor R4 is connected to the second input terminal of the comparison module 30; the inverting input terminal of the comparator U1 is connected to the other end of the first input resistor R3, the non-inverting input terminal of the comparator U1 is connected to the other end of the second input resistor R4, and the output terminal of the comparator U1 is connected to the output terminal of the comparison module 30. In the figure, Overload represents the connection point between the microcontroller and the comparator U1. Grounding resistors R5 and R6 can also be respectively provided between the first input resistor R3, the second input resistor R4, and the comparator U1. The comparator U1 and the microcontroller can also be connected to a 3.3V operating power supply through resistor R7. In some other embodiments of this utility model, the comparison module 30 can also directly sample the input terminal B+ and the output terminal Uout of the high-side drive circuit through the microcontroller and compare the sampled voltages, etc. This embodiment does not impose any limitations.
[0027] like Figure 2 and Figure 3 As shown, in a specific embodiment of this utility model, the N-channel switching device 10 is an NMOS transistor Q1. When the output terminal Uout of the high-side drive circuit is short-circuited to ground on the side connected to the load, the current I flowing through the current sensing resistor R1... R1 The voltage increases until it reaches the conduction threshold, at which point the first transistor Q2 turns on. This can be understood as I... R1 The larger the value, the larger the current of the first transistor Q2, and the lower the gate-source voltage of the NMOS transistor Q1. According to the characteristics of the NMOS transistor Q1, I... R1 The current will decrease until equilibrium is reached. At equilibrium, the short-circuit current I... R1 Restricted to V BE(on)Around / R1, at this time, NMOS transistor Q1 is in the saturation region, V DS >V GS -V TH When the voltage difference ΔU between the input terminal B+ and the output terminal of the high-side drive circuit increases, the feedback signal of comparator U1 changes from high level to low level. This means the voltage difference between the input terminal B+ and the output terminal Uout of the high-side drive circuit exceeds the voltage difference threshold. This signal is sent to the microcontroller 40, which generates a control signal to turn off the NMOS transistor Q1, thus providing timely protection for Q1. Where V... BE(on) This represents the turn-on voltage of the first transistor Q2, and R1 is the resistance value of the current sensing resistor R1, V DS V represents the drain-source voltage. GS V represents the gate-source voltage. TH This represents the turn-on voltage of the NMOS transistor Q1.
[0028] Based on the short-circuit protection circuit of the above embodiments, this utility model also proposes a high-end drive circuit.
[0029] like Figure 4 As shown, the high-end drive circuit of this embodiment includes: the short-circuit protection circuit and the N-channel switching device 10 as described above, as well as a drive power module 50 and a control module 60; wherein, the output terminal of the drive power module 50 is connected to the gate and source of the N-channel switching device 10; the control module 60 is connected to the microcontroller 40 and the drive power module 50 respectively, and the control module 60 inputs the control signal of the microcontroller 40 to the drive power module 50 to control the bias voltage provided by the drive power module 50 to the gate and source of the N-channel switching device 10, thereby realizing the turn-on and turn-off control of the N-channel switching device 10. The high-end drive circuit according to this embodiment of the present invention, due to including the aforementioned short-circuit protection circuit, also possesses the aforementioned beneficial effects.
[0030] like Figure 5 As shown, in a preferred embodiment, the driving power module 50 may include a charge pump submodule 51 and a voltage regulator submodule 52. The charge pump submodule 51 is located at the input terminal of the driving power module 50 and is used to provide bias voltages to the gate and source of the N-channel switching device 10. The voltage regulator submodule 52 is located at the output terminal of the driving power module 50 and is connected to the charge pump submodule 51 to stabilize the output voltage of the charge pump submodule 51. In the figure, Q1 represents an NMOS transistor, i.e., the N-channel switching device 10.
[0031] Specifically, the charge pump submodule 51 may include a pump capacitor C1, a first diode D1, a second diode D2, and an output capacitor. The input terminal of the pump capacitor C1 is connected to an external power supply; the anode of the first diode D1 is connected to the output terminal of the pump capacitor C1; the cathode of the second diode D2 is connected to the anode of the first diode D1; one end of the output capacitor is connected to the cathode of the first diode D1, and the other end is connected to the anode of the second diode D2. The voltage regulator submodule 52 is coupled to the output capacitor. The output capacitor may consist of multiple capacitors (C2, C3) connected in parallel, or it may be a single capacitor. Those skilled in the art can replace the charge pump submodule 51 with other common charge pump submodules according to actual needs; this embodiment does not impose any limitations.
[0032] As a preferred technical solution in this embodiment, a first resistor R3 is coupled between the output capacitor and the voltage regulator submodule 52 to provide a minimum current discharge path for the charge pump under no-load or very light-load conditions, preventing the output voltage from rising indefinitely due to charge accumulation, and ensuring no-load stability and safety.
[0033] As a preferred embodiment, the voltage regulator submodule 52 includes a second transistor Q3 and a Zener diode D3. The collector of the second transistor Q3 is connected to the output terminal of the charge pump submodule 51, a bias resistor R4 is connected between the base and collector of the second transistor Q3, and the emitter of the second transistor Q3 is connected to the gate of the N-channel switching device 10. The anode of the Zener diode D3 is connected to the output terminal of the high-side drive circuit, and the cathode of the Zener diode D3 is connected to the base of the second transistor Q3. Voltage stabilization is achieved by utilizing the amplification characteristics of the transistor and the emitter negative feedback principle. When the output voltage of the charge pump submodule 51 is unstable, the voltage regulator submodule 52 can adjust the operating point of the second transistor Q3 to keep the output voltage of the drive power supply module 50 stable. At this time, the collector of the first transistor Q2 is connected to the emitter of the second transistor Q3, the emitter of the first transistor Q2 is connected to the positive terminal of the Zener diode D3, the signal output terminal of the control module 60 is connected to the connection point between the base of the second transistor Q3 and the negative terminal of the Zener diode D3, and a second resistor R5 can also be connected between the emitter of the second transistor Q3 and the source of the N-channel switching device 10.
[0034] Furthermore, the voltage regulator submodule 52 may also include a third transistor Q4 that complements the second transistor Q3. The emitter of the third transistor Q4 is connected to the emitter of the second transistor Q3, the collector of the third transistor Q4 is connected to the positive terminal of the Zener diode D3, and the base of the third transistor Q4 is connected to the connection point. Through the synergistic effect of the two transistors, the stability of the output voltage can be better guaranteed.
[0035] As a preferred embodiment, a push-pull drive module 70 is further connected between the drive power module 50 and the control module 60. The push-pull drive module 70 includes a third resistor R6, a complementary fourth transistor Q5, and a fifth transistor Q6. The collector of the fourth transistor Q5 is connected to the signal output terminal of the control module 60, the collector of the fifth transistor Q6 is connected to the Zener diode D3, and the emitters of the fourth transistor Q5 and the fifth transistor Q6 are connected to a connection point. One end of the third resistor R6 is connected between the emitters of the fourth transistor Q5 and the fifth transistor Q6, and the other end of the third resistor R6 is connected between the bases of the fourth transistor Q5 and the fifth transistor Q6.
[0036] When the control circuit provides a high level, the fourth transistor Q5 and the fifth transistor Q6 are in a high-impedance state. The complementary fourth transistor Q5 and the fifth transistor Q6 can also act as amplifiers, increasing the overcurrent capability of the high-side drive circuit.
[0037] When the microcontroller 40 inputs a low signal through the control module 60, the fourth transistor Q5 and the fifth transistor Q6 are turned off. The output voltage of the charge pump submodule 51 is fully applied to the bias resistor R4 and the Zener diode D3, so that the second transistor Q3 is turned on, thereby driving the N-channel switching device 10 to turn on. When the microcontroller 40 inputs a high signal through the control module 60, the fifth transistor Q6 is turned on, causing the voltage supplied by the charge pump module 51 to the Zener diode D3 to decrease, which cannot meet the conduction requirements of the N-channel switching device 10, causing the N-channel switching device 10 to turn off.
[0038] like Figure 5 As shown, in a preferred embodiment, the control module 60 includes a sixth transistor Q7 and a third diode D4. The base of the sixth transistor Q7 is used to receive a control signal, and the emitter of the sixth transistor Q7 is grounded through a grounding resistor R12. The cathode of the third diode D4 is connected to the collector of the sixth transistor Q7, and the anode of the third diode D4 is connected to the drive power supply module 50 to provide feedback on the control signal. In the figure, "Control" represents the control signal received by the control module 60.
[0039] When the sixth transistor Q7 receives a high-level signal, it becomes saturated and conducts, feeding back to the push-pull drive module 70 or the drive power module 50 through the positive terminal of the third diode D4. This reduces the bias voltage provided by the drive power module 50, thereby controlling the turn-off of the N-channel switching device 10. When the sixth transistor Q7 receives a low-level signal, it becomes off, feeding back to the push-pull drive module 70 or the drive power module 50 through the positive terminal of the third diode D4. This enables the drive power module 50 to provide a higher bias voltage to the N-channel switching device 10, thus turning it on.
[0040] The following is combined Figure 5 This invention explains the working principle of the high-side drive circuit in a specific embodiment. First, the charge pump generates a floating 15V voltage. When the high-side drive circuit needs to be turned on, the microcontroller 40 can control the Zener diode D3 to generate a floating 13V drive voltage via the control module 60, thus turning on the NMOS transistor Q1. When the high-side drive circuit needs to be turned off, the microcontroller 40 controls the voltage to de-regulate the Zener diode D3. At this time, only a floating voltage of approximately 4V is generated on the Zener diode D3. Since 4V is insufficient to turn on the NMOS transistor Q1, the high-side drive circuit is turned off.
[0041] The embodiments of the present invention have been described in detail above with reference to the accompanying drawings. However, the present invention is not limited to the above embodiments. Within the scope of knowledge possessed by those skilled in the art, various changes can be made without departing from the spirit of the present invention.
Claims
1. A short-circuit protection circuit for a high-side drive circuit, the high-side drive circuit comprising an N-channel switching device, the drain and source of the N-channel switching device being respectively connected to the input and output terminals of the high-side drive circuit, the output terminal of the high-side drive circuit being grounded through a load, characterized in that, The short-circuit protection circuit includes: The shunt module has its trigger terminal connected to the source of the N-channel switching device, its input terminal connected to the gate of the N-channel switching device, and its output terminal connected to the output terminal of the high-side drive circuit. The input and output terminals of the shunt module are connected based on a first current at the trigger terminal, and the first current is greater than or equal to the conduction threshold of the shunt module. The comparison module has a first input terminal connected to the input terminal of the high-side drive circuit, a second input terminal connected to the output terminal of the high-side drive circuit, and an output terminal connected to a microcontroller to provide feedback to the microcontroller on the voltage comparison result between the input and output terminals of the high-side drive circuit. The microcontroller generates a control signal based on the voltage comparison result to control the on and off states of the N-channel switching device.
2. The short-circuit protection circuit according to claim 1, characterized in that, The traffic splitting module includes: The first transistor has its collector connected to the input terminal of the shunt module, its emitter connected to the output terminal of the shunt module, and its base connected to the trigger terminal of the shunt module. A current sensing resistor is provided, one end of which is connected to the trigger terminal of the shunt module, and the other end of which is connected to the output terminal of the high-side drive circuit. The conduction threshold of the shunt module is the conduction threshold of the first transistor.
3. The short-circuit protection circuit according to claim 1, characterized in that, The comparison module includes: A first input resistor, one end of which is connected to the first input terminal of the comparison module; A second input resistor, one end of which is connected to the second input terminal of the comparison module; The comparator has its inverting input connected to the other end of the first input resistor, its non-inverting input connected to the other end of the second input resistor, and its output connected to the output of the comparison module.
4. A high-end drive circuit, characterized in that, include: The short-circuit protection circuit and N-channel switching device as described in any one of claims 1 to 3 above; A drive power module, the output terminal of which is connected to the gate and source of the N-channel switching device; The control module is connected to both the microcontroller and the drive power module. The control module inputs the control signal from the microcontroller into the drive power module to control the bias voltage provided by the drive power module to the gate and source of the N-channel switching device, thereby realizing the turn-on and turn-off control of the N-channel switching device.
5. The high-end drive circuit according to claim 4, characterized in that, The drive power module includes: A charge pump submodule, located at the input terminal of the drive power module; A voltage regulator submodule is located at the output terminal of the drive power supply module and is connected to the charge pump submodule to stabilize the output voltage of the charge pump module.
6. The high-end drive circuit according to claim 5, characterized in that, The charge pump submodule includes: Pump capacitor, the input terminal of which is connected to an external power supply; The first diode, the positive terminal of which is connected to the output terminal of the pump capacitor; The second diode has its negative terminal connected to the positive terminal of the first diode; An output capacitor is provided, one end of which is connected to the negative terminal of the first diode, and the other end of which is connected to the positive terminal of the second diode. The voltage regulator submodule is coupled to the output capacitor.
7. The high-side drive circuit according to claim 5 or 6, characterized in that, The shunt module of the short-circuit protection circuit includes: a first transistor, the collector of which is connected to the input terminal of the shunt module, the emitter of which is connected to the output terminal of the shunt module, and the base of which is connected to the trigger terminal of the shunt module; and a current-sensing resistor, one end of which is connected to the trigger terminal of the shunt module, and the other end of which is connected to the output terminal of the high-side drive circuit, wherein the conduction threshold of the shunt module is the conduction threshold of the first transistor. The voltage regulator submodule includes: The second transistor has its collector connected to the output terminal of the charge pump submodule, a bias resistor connected between its base and collector, and its emitter connected to the gate of the N-channel switching device. A Zener diode, wherein the anode of the Zener diode is connected to the output terminal of the high-side drive circuit, and the cathode of the Zener diode is connected to the base of the second transistor. The collector of the first transistor is connected to the emitter of the second transistor, the emitter of the first transistor is connected to the anode of the Zener diode, and the signal output terminal of the control module is connected to the junction between the base of the second transistor and the cathode of the Zener diode.
8. The high-end drive circuit according to claim 7, characterized in that, The voltage regulator submodule also includes a third transistor that is complementary to the second transistor. The emitter of the third transistor is connected to the emitter of the second transistor, the collector of the third transistor is connected to the positive terminal of the Zener diode, and the base of the third transistor is connected to the connection point.
9. The high-end drive circuit according to claim 7, characterized in that, A push-pull drive module is further connected between the drive power module and the control module, and the push-pull drive module includes: The fourth and fifth transistors are complementary, with the collector of the fourth transistor connected to the signal output terminal of the control module, the collector of the fifth transistor connected to the Zener diode, and the emitters of the fourth and fifth transistors connected to the connection point. The third resistor has one end connected between the emitters of the fourth and fifth transistors, and the other end connected between the bases of the fourth and fifth transistors.
10. The high-end drive circuit according to claim 4, characterized in that, The control module includes: The sixth transistor has its base used to receive the control signal and its emitter grounded through a grounding resistor. The third diode has its negative terminal connected to the collector of the sixth transistor, and its positive terminal connected to the drive power module to provide feedback on the control signal.