Semiconductor photonic device

Abstract

The utility model provides a kind of semiconductor photon device including optical splitter structure, with the optical waveguide loop of optical splitter structure adjacent, with the optical resonator structure of optical waveguide loop adjacent, with the closed loop optical waveguide structure of optical resonator structure adjacent and the photoelectric detector structure of optical coupling to closed loop optical waveguide structure. Semiconductor photon device enables additional data stream to be multiplexed onto wavelength division multiplexing optical signal, to increase optical communication bandwidth and efficiency, while minimizing the increase of power consumption and complexity of optical demultiplexer circuit.

Description

Technical Field

[0001] Embodiments of this utility model relate to a semiconductor photonic device, and more particularly to a semiconductor photonic device including an optical multiplexer circuit. Background Technology

[0002] Semiconductor photonic devices can be configured to use fiber optic signals for high-speed and secure data transmission. Semiconductor photonic devices can be used in applications such as high-performance computing (HPC), high-speed telecommunications, data center communications, and / or optical sensing. Utility Model Content

[0003] An embodiment of this utility model provides a semiconductor photonic device including a beam splitter structure, an optical waveguide circuit adjacent to the beam splitter structure, an optical resonator structure adjacent to the optical waveguide circuit, a closed-loop optical waveguide structure adjacent to the optical resonator structure, and a photodetector structure optically coupled to the closed-loop optical waveguide structure.

[0004] Embodiments of this utility model provide a semiconductor photonic device including a beam splitter structure, an optical waveguide circuit adjacent to the beam splitter structure, a first optical resonator structure, a first closed-loop optical waveguide structure adjacent to the first optical resonator structure, a first photodetector structure optically coupled to the first closed-loop optical waveguide structure, a second optical resonator structure, a second closed-loop optical waveguide structure adjacent to the second optical resonator structure, and a second photodetector structure optically coupled to the second closed-loop optical waveguide structure. The optical waveguide circuit includes a first branch coupled to a first output of the beam splitter structure at a first end of the optical waveguide circuit and a second branch coupled to a second output of the beam splitter structure at a first end of the optical waveguide circuit, wherein the first branch and the second branch are coupled together at a second end of the optical waveguide circuit opposite to the first end. The first optical resonator structure is adjacent to the first branch of the optical waveguide circuit, and the second optical resonator structure is adjacent to the first branch of the optical waveguide circuit. The first closed-loop optical waveguide structure has a first length, and the second closed-loop optical waveguide structure has a second length different from the first length.

[0005] Based on the above, the photonic integrated circuit of the semiconductor photonic device in the embodiments of this utility model includes an optical multiplexer circuit configured to multiplex multiple polarized optical signals using the same set of photonic components. The optical resonator structure, optical waveguide structure, and photodetector structure of the optical multiplexer circuit are configured to multiplex wavelength components from two or more polarized optical signals. Two or more polarized optical signals can propagate along the optical waveguide loop in opposite directions toward the optical resonator structure and can be optically coupled to the waveguide structure through the optical resonator structure. The length of the optical waveguide structure and the positioning of the photodetector structure along the optical waveguide structure are selected such that the two or more polarized optical signals travel approximately the same distance to the photodetector structure, thereby synchronizing the two or more polarized optical signals at the photodetector structure. Since only a single optical resonator structure is included for each wavelength component to couple two or more polarized optical signals from the optical waveguide loop to the associated optical waveguide structure, the scaling complexity of the additional data stream of the optical signal is reduced to a 1:1 ratio to the additional data stream of the additional optical resonator structure. This allows additional data streams to be multiplexed onto wavelength division multiplexed optical signals to increase optical communication bandwidth and efficiency, while minimizing the increase in power consumption and complexity of optical multiplexer circuitry.

[0006] To make the above features and advantages of the embodiments of this utility model more apparent and understandable, specific embodiments are described below in conjunction with the accompanying drawings. Attached Figure Description

[0007] Figure 1 This is a diagram of the example semiconductor photonic device described in this article.

[0008] Figure 2 This is a diagram of an example of a semiconductor photonic device described herein.

[0009] Figure 3 This is a cross-sectional view of an exemplary embodiment of a semiconductor photonic device described herein.

[0010] Figure 4 This is a diagram of an exemplary embodiment of optical signal propagation in the semiconductor photonic device described herein.

[0011] Figure 5 This is a diagram of an example of the input optical signal described in this article.

[0012] Figure 6 This is a diagram of an exemplary embodiment of a wavelength component multiplexing circuit as described herein.

[0013] Figures 7A to 7M This is a diagram illustrating an exemplary embodiment of the semiconductor photonic device (or a portion thereof) described herein.

[0014] Figure 8 This is a flowchart of an example process related to the formation of the semiconductor photonic device described herein.

[0015] Illustrative embodiments will now be described with reference to the accompanying drawings. In the drawings, the same reference numerals generally denote identical, functionally similar, and / or structurally similar devices. Detailed Implementation

[0016] The following disclosure provides numerous different embodiments or examples for implementing various features of this disclosure. Specific examples of components and arrangements are described below to simplify this disclosure. Of course, these are merely examples and are not intended to limit the scope of this disclosure. For example, in the following description, the first feature being formed "on" or "on" a second feature may include embodiments where the first and second features are formed in direct contact, or embodiments where an additional feature is formed between the first and second features such that the first and second features are not in direct contact. Furthermore, component numbers and / or letters may be repeated in various examples of this disclosure. Such repetition is for simplification and clarity of description of this disclosure, and is not intended to limit the relationship between various embodiments and / or configurations.

[0017] Furthermore, for ease of explanation, spatially relative terms such as "below," "under," "lower," "above," and "upper" may be used herein to describe the relationship between one component or feature shown in the figures and another component or feature. In addition to the orientations illustrated in the figures, these spatially relative terms also cover different orientations of the device during use or operation. The device may have other orientations (rotated 90 degrees or in other orientations), and the spatially relative descriptions used therein may be interpreted in the same manner. Unless otherwise explicitly stated, each component with the same reference numerals is assumed to have the same material composition and thickness within the same thickness range.

[0018] In some cases, the photonic integrated circuits of semiconductor photonic devices may include optical demultiplexer circuits configured to multiplex optical signals using wavelength division multiplexing (WDM). WDM enables optical signals to carry multiple data streams that are multiplexed together using different optical wavelengths. Generally, the greater the number of data streams multiplexed together on an optical signal, the greater the complexity of the optical demultiplexer circuit required to multiplex the optical signal. For example, an optical demultiplexer circuit may include a set of photonic components (e.g., optical resonator structures, optical waveguide structures, photodetector structures) for multiplexing each data stream onto the optical signal. Therefore, increasing the number of data streams multiplexed onto the optical signal increases the number of photonic components used for multiplexing the optical signal.

[0019] Furthermore, optical signals can be received as unpolarized signals, thus potentially requiring polarization into multiple polarized signals, each of which is then multiplexed by an optical multiplexer circuit. This further increases the complexity of the optical multiplexer circuitry and leads to a significant scaling complexity of the increased data streams. For example, each additional data stream multiplexed onto an optical signal can result in the addition of two or more sets of photonic components for two or more polarized signals. Consequently, the data streams multiplexed onto optical signals result in at least a doubling of power consumption and at least a doubling of the physical size of the semiconductor photonic device.

[0020] In some embodiments described herein, the photonic integrated circuit of a semiconductor photonic device includes an optical multiplexer circuit configured to multiplex multiple polarized optical signals using the same set of photonic components. For example, a WDM optical signal can be split into two or more polarized optical signals, each carrying multiple data streams multiplexed onto different wavelength components. In contrast to having a separate optical resonator structure for each of the two or more polarized optical signals, the optical resonator structure, optical waveguide structure, and photodetector structure of the optical multiplexer circuit are configured to multiplex wavelength components from the two or more polarized optical signals. The two or more polarized optical signals can propagate in opposite directions toward the optical resonator structure along the optical waveguide loop and can be optically coupled to the waveguide structure via the optical resonator structure. The length of the optical waveguide structure and the positioning of the photodetector structure along the optical waveguide structure are chosen such that the two or more polarized optical signals travel approximately the same distance to the photodetector structure, thereby synchronizing the two or more polarized optical signals at the photodetector structure.

[0021] Optical multiplexer circuits can include similar arrangements of photonic components for multiplexing other wavelength components of a WDM optical signal. Because only a single optical resonator structure is included for each wavelength component to couple two or more polarized optical signals from an optical waveguide loop to an associated optical waveguide structure (e.g., in contrast to optical resonator structures including structures for each of the two or more polarized optical signals), the scaling complexity of the additional data stream of the WDM optical signal is reduced to a 1:1 ratio to the additional data stream of the additional optical resonator structure. This allows additional data streams to be multiplexed onto the WDM optical signal to increase optical communication bandwidth and efficiency while minimizing the increase in power consumption and complexity of the optical multiplexer circuitry.

[0022] Figure 1 This is a diagram of the example semiconductor photonic device 100 described herein. The semiconductor photonic device 100 is a semiconductor device including at least one photonic integrated circuit. The photonic integrated circuit may include other types of optical multiplexing circuits 102 configured to multiplex WDM optical signals and / or multiplex optical signals.

[0023] like Figure 1 As shown, the optical multiplexing circuit 102 can be optically coupled to one or more other photonic components of the semiconductor photonic device 100, such as the edge coupler waveguide structure 104, the coupled waveguide structure 106, and / or the polarization splitter and rotator (PSR) waveguide structure 108, and other examples. The edge coupler waveguide structure 104, the coupled waveguide structure 106, and the PSR waveguide structure 108 can be arranged in the x-direction of the semiconductor photonic device 100, and the coupled waveguide structure 106 can be located between the edge coupler waveguide structure 104 and the PSR waveguide structure 108 in the x-direction.

[0024] The edge coupler waveguide structure 104 can be configured to receive an input optical signal (e.g., an unpolarized optical signal) from an external optical input, such as an optical fiber input. The input optical signal can propagate through the edge coupler waveguide structure 104 and reach the coupling waveguide structure 106. The coupling waveguide structure 106 optically couples the input optical signal from the edge coupler waveguide structure 104 to the PSR waveguide structure 108. The PSR waveguide structure 108 is a type of beam splitter structure that splits the input optical signal into multiple polarized optical signals and provides the polarized optical signals to the optical multiplexer circuit 102.

[0025] Optical multiplexing circuit 102 is configured to multiplex the wavelength components of an input optical signal into separate data streams. Optical multiplexing circuit 102 includes an optical waveguide loop 110, which includes elongated branches 112a and 112b extending along the x-direction. Branches 112a and 112b of optical waveguide loop 110 are coupled together at a loop end 114, such that optical waveguide loop 110 extends continuously around loop end 114. Branches 112a and 112b of optical waveguide loop 110 are spaced apart and disconnected at an input end 116, such that polarized optical signals can be independently supplied to branches 112a and 112b. The input end 116 can be referred to as the near end of the optical waveguide loop 110 because the input end 116 is closest to the PSR waveguide structure 108, while the loop end 114 can be referred to as the far end of the optical waveguide loop 110 because the loop end 114 is farthest from the PSR waveguide structure 108.

[0026] Further as Figure 1 As shown, the optical multiplexing circuit 102 includes multiple wavelength component multiplexing circuits, such as wavelength component multiplexing circuits (118a-118f). Each of the wavelength component multiplexing circuits (118a-118f) is configured to multiplex a specific wavelength component of one or more polarized optical signals received at the optical multiplexing circuit 102. For example, six wavelength components can be multiplexed onto a single input optical signal; therefore, the optical multiplexing circuit 102 may include six wavelength component multiplexing circuits (118a-118f), each configured to multiplex one of the six wavelength components. Thus, Figure 1 The number of wavelength component multiplexing circuits (118a-118f) shown is an example, and the number of wavelength component multiplexing circuits (118a-118f) included in optical multiplexing circuit 102 can be based on the number of wavelength components multiplexed to the input optical signal processed by optical multiplexing circuit 102.

[0027] A first subset of the wavelength component multiplexing circuits (118a-118f) may be located adjacent to branch 112a, and a second subset of the wavelength component multiplexing circuits (118a-118f) may be located adjacent to branch 112b. For example, wavelength component multiplexing circuits (118a-118c) may be located laterally adjacent to branch 112a, and wavelength component multiplexing circuits (118d-118f) may be located laterally adjacent to branch 112b. In some embodiments, the number of wavelength component multiplexing circuits adjacent to branch 112a is the same as the number of wavelength component multiplexing circuits adjacent to branch 112b. In some embodiments, the number of wavelength component multiplexing circuits adjacent to branch 112a is different from the number of wavelength component multiplexing circuits adjacent to branch 112b.

[0028] Wavelength component multiplexer circuits (118a-118c) located laterally adjacent to branch 112a can be distributed laterally along branch 112a in the x-direction. Wavelength component multiplexer circuit 118a can be closer to the input terminal 116 of optical waveguide loop 110 than wavelength component multiplexer circuits (118b and 118c). Wavelength component multiplexer circuit 118c can be closer to the loop terminal 114 of optical waveguide loop 110 than wavelength component multiplexer circuits (118a and 118b). Wavelength component multiplexer circuit 118b can be laterally positioned between wavelength component multiplexer circuits (118a and 118c) in the x-direction.

[0029] The wavelength component multiplexers (118d-118f), located laterally adjacent to branch 112b, can be distributed laterally along branch 112b in the x-direction. Wavelength component multiplexer 118d can be closer to the input terminal 116 of optical waveguide loop 110 than wavelength component multiplexers (118e and 118f). Wavelength component multiplexer 118f can be closer to the loop terminal 114 of optical waveguide loop 110 than wavelength component multiplexers (118d and 118e). Wavelength component multiplexer 118e can be laterally positioned between wavelength component multiplexers (118d and 118f) in the x-direction.

[0030] Each of the wavelength component multiplexing circuits (118a, 118b, 118c, 118d, 118e, 118f) includes a single optical resonator structure (120a, 120b, 120c, 120d, 120e, 120f) and an associated resonator heating structure (122a, 122b, 122c, 122d, 122e, 122f). For example, wavelength component multiplexing circuit 118a includes a single optical resonator structure 120a and an associated resonator heating structure 122a, wavelength component multiplexing circuit 118b includes a single optical resonator structure 120b and an associated resonator heating structure 122b, and so on.

[0031] Optical resonator structure 120a includes a ring resonator (e.g., a micro-ring resonator (MRR) and / or another type of closed-loop optical resonator) configured to optically couple a specific wavelength component of a polarized light signal from optical waveguide loop 110 to an associated closed-loop optical waveguide structure 124a. Resonator heating structure 122a includes a metal heater (e.g., a tungsten (W) heater and / or other types of metal heaters), a semiconductor heater (e.g., a silicon (Si) heater and / or other types of semiconductor heaters), which radiates heat to optical resonator structure 120a to stabilize the resonant frequency of optical resonator structure 120a. The optical resonator structure 120a optically couples the wavelength component of the polarized light signal corresponding to the resonant frequency of optical resonator structure 120a. The optical resonator structure (120b-120f) and the resonator heating structure (122b-122f) can be configured in a similar manner to optically couple other wavelength components of the polarized light signal to the optical waveguide loop 110 and the closed-loop optical waveguide structure (124b-124f), respectively.

[0032] The closed-loop optical waveguide structures (124a-124f) can be "closed-loop" because each of them is a continuous waveguide structure without a termination point. The closed-loop optical waveguide structures (124a-124f) can include semiconductor waveguide structures (e.g., silicon (Si) waveguide structures) and dielectric waveguide structures (e.g., silicon nitride (Si) waveguide structures). x N y (waveguide structure) and / or hybrid semiconductor / dielectric waveguide structure.

[0033] Polarized light signals can propagate in opposite directions around the optical waveguide loop 110, causing them to be optically coupled to the optical resonator structure 120a in opposite directions. For example, a polarized light signal received at branch 112a at the input end 116 of the optical waveguide loop 110 can be optically coupled to the optical resonator structure 120a and propagate around it in a counterclockwise optical propagation path. Another polarized light signal received at branch 112b at the input end 116 of the optical waveguide loop 110 can propagate in the opposite direction around the loop end 114 and be optically coupled to the optical resonator structure 120a via branch 112a, propagating around it in a clockwise optical propagation path. This allows a single optical resonator structure 120a to be used to optically couple multiple polarized light signals to the wavelength component multiplexer circuit 118a, as opposed to using a separate optical resonator structure for each of the multiple polarized light signals. The optical resonator structure (120b-120f) can similarly couple multiple polarized light signals optically to wavelength component multiplexer circuits (118b-118f). Combined with... Figure 4 A detailed operational example of the optical multiplexing circuit 102 is shown and described.

[0034] A polarized light signal optically coupled from optical waveguide loop 110 to closed-loop optical waveguide structure 124a can propagate around closed-loop optical waveguide structure 124a to photodetector structure 126a of wavelength component multiplexing circuit 118a contained in closed-loop optical waveguide structure 124a. Wavelength component multiplexing circuits (118b-118f) can each include a similar arrangement of photodetector structures (126b, 126c, 126d, 126e, 126f).

[0035] The photodetector structures (126a-126f) can be configured to convert wavelength components of a polarized light signal (e.g., multiplexed by wavelength component multiplexing circuits (118a-118f)) into electrical signals corresponding to the data stream carried on those wavelength components. The photodetector structures (126a-126f) can include semiconductor photodetector structures (e.g., germanium (Ge) photodetectors and / or another type of semiconductor photodetector structure) configured to convert photons of the received polarized light signal into electrons of an electrical signal.

[0036] Since the plurality of polarized light signals optically coupled from the optical waveguide loop 110 to the closed-loop optical waveguide structure 124a through the optical resonator structure 120a propagate along different optical propagation paths, the different lengths of these optical propagation paths can cause a delay in the reception of one of the polarized light signals at the photodetector structure 126a. For example, a first polarized light signal received at branch 112a may propagate to the optical resonator structure 120a along a shorter optical propagation path than a second polarized light signal, which is received at branch 112b and propagates through the loop end 114 and returns to the optical resonator structure 120a along branch 112a. To compensate for the longer optical propagation path of the second polarized light signal, the length of the closed-loop optical waveguide structure 124a and the position of the photodetector structure 126a can be selected to ensure that the first polarized light signal propagates to the photodetector structure 126a through the closed-loop optical waveguide structure 124a along a longer optical propagation path than the second polarized light signal. To achieve this, the photodetector structure 126a can be positioned along the closed-loop optical waveguide structure 124a such that the opposite optical propagation paths from the closed-loop optical waveguide structure 124a to the photodetector structure 126a have different lengths. Therefore, the closed-loop optical waveguide structure 124a is an optical delay line that introduces a propagation delay for the first optical signal within the closed-loop optical waveguide structure 124a to compensate for the propagation delay of the second optical signal in the optical waveguide loop 110. The length of the closed-loop optical waveguide structure 124a can be selected (…). Figure 1 Let the length be denoted as D1, such that the total optical propagation path length of the first polarized light signal from the input terminal 116 of the optical waveguide loop 110 to the photodetector structure 126a is approximately equal to the total optical propagation path length of the second polarized light signal from the input terminal 116 of the optical waveguide loop 110 to the photodetector structure 126a, so that the first polarized light signal and the second polarized light signal are received at the photodetector structure 126a almost simultaneously. The length of the closed-loop optical waveguide structure (124b-124f) can be selected in a similar manner (in...). Figure 1 The values ​​are represented as (D2-D6) respectively.

[0037] Because one of the polarized light signals must propagate through loop 114 and return to input 116 along branches (112a and 112b), the closer the wavelength component multiplexer is to input 116, the longer the closed-loop optical waveguide structure becomes. This is because the closer the wavelength component multiplexer is to input 116, the greater the difference in propagation delay of the polarized light signal through optical waveguide loop 110. For example, the first polarized light signal received at branch 112a and propagating through loop 114 and returning to closed-loop optical waveguide structure 124d along branch 112b must propagate a greater distance than the second polarized light signal received at branch 112b and propagating to closed-loop optical waveguide structure 124d. The delay between the first polarized light signal and the second polarized light signal in the closed-loop optical waveguide structure 124d is greater than the delay in the closed-loop optical waveguide structure 124f. This is because the distance the first polarized light signal travels along branch 112b to the closed-loop optical waveguide structure 124f is shorter, while the distance the second polarized light signal travels along branch 112b to the closed-loop optical waveguide structure 124f is longer. Therefore, the closer the closed-loop optical waveguide structure (124a-124f) is to the input end 116 of the optical waveguide loop 110, the greater its length; and the closer the closed-loop optical waveguide structure (124a-124f) is to the loop end 114 of the optical waveguide loop 110, the smaller its length. Therefore, the length (size D1) of the closed-loop optical waveguide structure 124a can be greater than the length (size D2) of the closed-loop optical waveguide structure 124b, the length (size D3) of the closed-loop optical waveguide structure 124c, the length (size D5) of the closed-loop optical waveguide structure 124e, and the length (size D6) of the closed-loop optical waveguide structure 124f. The length (size D4) of the closed-loop optical waveguide structure 124d can also be greater than the length (size D2) of the closed-loop optical waveguide structure 124b, the length (size D3) of the closed-loop optical waveguide structure 124c, the length (size D5) of the closed-loop optical waveguide structure 124e, and the length (size D6) of the closed-loop optical waveguide structure 124f. If the distances of the closed-loop optical waveguide structures (124a and 124d) from the input end 116 of the optical waveguide loop 110 are similar, then the lengths (size D1) of the closed-loop optical waveguide structure 124a and the lengths (size D4) of the closed-loop optical waveguide structure 124d can be approximately the same.

[0038] The length (size D3) of the closed-loop optical waveguide structure 124c can be smaller than the lengths (size D1), (size D2), (size D4), and (size D5) of the closed-loop optical waveguide structures 124a, 124b, 124d, and 124e, because the closed-loop optical waveguide structure 124c is closer to the loop end 114 of the optical waveguide loop 110 than the closed-loop optical waveguide structures (124a, 124b, 124d, and 124e). Similarly, the length (size D6) of the closed-loop optical waveguide structure 124f can be smaller than the length (size D1) of the closed-loop optical waveguide structure 124a, the length (size D2) of the closed-loop optical waveguide structure 124b, the length (size D4) of the closed-loop optical waveguide structure 124d, and the length (size D5) of the closed-loop optical waveguide structure 124e, because the closed-loop optical waveguide structure 124c is closer to the loop end 114 of the optical waveguide loop 110 than the closed-loop optical waveguide structures (124a, 124b, 124d, and 124e).

[0039] Alternatively, closed-loop optical waveguide structures 124a and 124b may have the same length (e.g., sizes D1 and D2 are approximately equal), and photodetector structure 126a may be positioned along closed-loop optical waveguide structure 124a such that photodetector structure 126a is equidistant from optical resonator structure 120a along the opposite optical propagation path through closed-loop optical waveguide structure 124a, than photodetector structure 126b is equidistant from optical resonator structure 120b along the opposite optical propagation path through closed-loop optical waveguide structure 124b.

[0040] As mentioned above, Figure 1 Provided as an example. Other examples are available. Figure 1 The differences mentioned above.

[0041] Figure 2 This is a diagram of Example 200, which is part of the semiconductor photonic device 100 described herein. Figure 2 A top view of the aforementioned portion of the semiconductor photonic device 100 is shown, which includes an edge coupler waveguide structure 104, a coupling waveguide structure 106, and a PSR waveguide structure 108. (As shown) Figure 2 As shown, the edge coupler waveguide structure 104, the coupling waveguide structure 106, and the PSR waveguide structure 108 can each extend in the x direction in the semiconductor photonic device 100.

[0042] The edge coupler waveguide structure 104 may include a tapered section 202, a tapered section 204, and a transition section 206 between the tapered sections (202 and 204). The tapered section 202 may be optically coupled to an optical fiber, cable, and / or other type of external optical input.

[0043] The edge coupler waveguide structure 104 may include a dielectric waveguide comprising one or more dielectric materials. Examples of dielectric materials that may be included in the edge coupler waveguide structure 104 include silicon nitride (Si). x N y For example, Si3N4), alumina materials (Al x O y For example, Al2O3), aluminum nitride (AlN), hafnium oxide (HfO) materials. x For example, HfO2), titanium dioxide materials (TiO2) x For example, TiO2), zinc oxide (ZnO) and / or germanium oxide (GeO) materials. x For example, GeO2) and other examples. Alternatively, the edge coupler waveguide structure 104 may include semiconductor materials, such as silicon (Si) and other examples.

[0044] The coupled waveguide structure 106 may include a tapered section 208 at a first end of the coupled waveguide structure 106. The tapered section 208 of the coupled waveguide structure 106 may at least partially overlap with the tapered section 204 of the edge coupler waveguide structure 104. The overlap may correspond to a coupling region 210 between the edge coupler waveguide structure 104 and the coupled waveguide structure 106. The coupling region 210 is the region where the input optical signal transitions between the edge coupler waveguide structure 104 and the coupled waveguide structure 106. The coupled waveguide structure 106 may include another tapered section 212 at a second end of the coupled waveguide structure 106 opposite to the first end, and a transition section 214 between the tapered sections (208 and 212).

[0045] In some embodiments, the coupling waveguide structure 106 includes a dielectric waveguide comprising one or more dielectric materials. In some embodiments, the coupling waveguide structure 106 includes a semiconductor waveguide comprising one or more semiconductor materials. Examples of semiconductor materials include silicon (Si), germanium (Ge), and / or another semiconductor material.

[0046] The PSR waveguide structure 108 may include a tapered section 216 in the coupling region 218 between the coupled waveguide structure 106 and the PSR waveguide structure 108, which at least partially overlaps with the tapered section 212 of the coupled waveguide structure 106. The coupling region 218 is the region where the input optical signal transitions between the coupled waveguide structure 106 and the PSR waveguide structure 108. The PSR waveguide structure 108 may also include a transition section 220, a double tapered section 224, and another tapered section 226.

[0047] At one end of the PSR waveguide structure 108 opposite to the tapered section 212, the PSR waveguide structure 108 may include a through section 228 and a cross section 230 extending along the through section 228 in the x-direction. The through section 228 may include a tapered section 226 and an output section 232 optically coupled to the tapered section 226. The through section 228 may include different types of portions and / or portions arranged differently. The cross section 230 may include a tapered section 234 and an output section 236 optically coupled to the tapered section 234.

[0048] The PSR waveguide structure 108 can be configured to split the input optical signal into two orthogonally polarized optical signals: a transverse electric (TE) polarized optical signal and a transverse magnetic (TM) polarized optical signal. The PSR waveguide structure 108 then rotates one of the polarized optical signals, such that two separate TE polarized optical signals (e.g., a TE polarized optical signal and a rotated TE polarized optical signal) or two separate TM polarized optical signals (e.g., a TM polarized optical signal and a rotated TM polarized optical signal) are provided as outputs from the PSR waveguide structure 108 at the output sections (232 and 236). For example, the TE polarized optical signal can be provided through the output section 232 of the through section 228 to a branch 112b of the optical waveguide loop 110 of the optical multiplexer circuit 102, and the rotated TE polarized optical signal can be provided through the output section 236 of the cross section 230 to a branch 112a of the optical waveguide loop 110 of the optical multiplexer circuit 102.

[0049] As mentioned above, Figure 2 Provided as an example. Other examples are available. Figure 2 The differences mentioned above.

[0050] Figure 3 This is a cross-sectional view of an exemplary embodiment 300 of the semiconductor photonic device 100 described herein. Figure 3 The exemplary cross-sectional view shown is along Figure 1The AA line in the y-direction passes through the portion of wavelength component multiplexer 118c. It should be noted that other wavelength component multiplexers (e.g., wavelength component multiplexers (118a, 118b, 118d, 118e and / or 118f)) may have the following characteristics: Figure 3 A similar arrangement is shown. Additionally and / or alternatively, other wavelength component multiplexing circuits (e.g., wavelength component multiplexing circuits (118a, 118b, 118d, 118e and / or 118f)) may have the same... Figure 3 The different arrangements are shown.

[0051] like Figure 3 As shown, the wavelength component multiplexing circuit 118c is laterally adjacent to the optical waveguide loop 110 (e.g., a branch 112a of the optical waveguide loop 110) in the y-direction. Specifically, a first side of the optical resonator structure 120c of the wavelength component multiplexing circuit 118c is laterally adjacent to the optical waveguide loop 110. A second side of the optical resonator structure 120c is laterally adjacent to the closed-loop optical waveguide structure 124c (e.g., an optical delay line) of the wavelength component multiplexing circuit 118c in the y-direction. Therefore, the optical resonator structure 120c is laterally positioned between the optical waveguide loop 110 and the closed-loop optical waveguide structure 124a in the y-direction. A photodetector structure 126c is located on a portion of the closed-loop optical waveguide structure 124c. The resonator heating structure 122c may be located within the perimeter of the optical resonator structure 120c. Additionally and / or alternatively, the resonator heating structure 122c may be located outside the perimeter of the optical resonator structure 120c.

[0052] like Figure 3 As further shown, the wavelength component multiplexing circuit 118c and the optical waveguide loop 110 may be located on the substrate layer 302 of the semiconductor photonic device 100. The substrate layer 302 may include a semiconductor material, such as silicon (Si), silicon germanium (SiGe), and / or another suitable semiconductor material.

[0053] Optical waveguide circuit 110, optical resonator structure 120c, closed-loop optical waveguide structure 124c, and / or photodetector structure 126c may be contained within a dielectric region 304 above substrate layer 302. An etch stop layer 306 may be included above dielectric region 304, and another dielectric region 308 may be included above etch stop layer 306. In some embodiments, resonator heating structure 122c is located within dielectric region 308, such as... Figure 3 As shown in the example. Alternatively and / or, the resonator heating structure 122c may be located in the dielectric region 304 and / or in another layer of the semiconductor photonic device 100.

[0054] Dielectric region 304, etch stop layer 306, and dielectric region 308 may each comprise one or more dielectric materials. Examples of such dielectric materials include oxides (e.g., silicon oxide (SiO2)). x (and / or another oxide material), undoped silicate glass (USG), boron-containing silicate glass (BSG), fluorine-containing silicate glass (FSG), extremely low dielectric constant (ELK) dielectric materials with a dielectric constant less than about 2.5, silicon nitride (Si) x N y ), silicon carbide (SiC), silicon oxynitride (SiON) and / or another suitable dielectric material.

[0055] In some embodiments, the optical waveguide loop 110, the optical resonator structure 120c, the closed-loop optical waveguide structure 124c, and / or the photodetector structure 126c may be formed from the same semiconductor layer of the semiconductor photonic device 100. The optical waveguide loop 110, the optical resonator structure 120c, the closed-loop optical waveguide structure 124c, and / or the photodetector structure 126c may each include one or more semiconductor materials, such as silicon (Si), doped silicon, germanium (Ge), silicon-germanium (SiGe), group III-V semiconductor materials, and / or another suitable semiconductor material. Additionally and / or alternatively, one or more of the optical waveguide loop 110, the optical resonator structure 120c, the closed-loop optical waveguide structure 124c, and / or the photodetector structure 126c may be formed from a dielectric layer and may include one or more of the aforementioned dielectric materials and / or another suitable dielectric material.

[0056] Optical waveguide loop 110, optical resonator structure 120c, closed-loop optical waveguide structure 124c, and / or photodetector structure 126c may each have a cross-sectional profile. Two or more of the optical waveguide loop 110, optical resonator structure 120c, closed-loop optical waveguide structure 124c, and / or photodetector structure 126c may have substantially the same cross-sectional profile. For example, two or more of the optical waveguide loop 110, optical resonator structure 120c, closed-loop optical waveguide structure 124c, and / or photodetector structure 126c may have a ribbed waveguide cross-sectional profile, wherein the ridge section is contained above the slab section. As another example, two or more of the optical waveguide loop 110, optical resonator structure 120c, closed-loop optical waveguide structure 124c, and / or photodetector structure 126c may have a strip waveguide cross-sectional profile. Additionally and / or alternatively, two or more of the optical waveguide loop 110, optical resonator structure 120c, closed-loop optical waveguide structure 124c, and / or photodetector structure 126c may have different cross-sectional profiles.

[0057] The photodetector structure 126c may include terminal sections 310 and 312 for facilitating the provision of electrical signals from the photodetector structure 126c. The photodetector structure 126c can generate an electrical signal based on an optical signal received at an absorption region 314 of the photodetector structure 126c. The absorption region 314 may be contained in a closed-loop optical waveguide structure 124c between the terminal sections (310 and 312). The absorption region 314 is configured to convert photons of the received optical signal into electrons. The number of electrons generated may be based on the number of photons absorbed in the absorption region 314. Therefore, the amplitude of the electrical signal generated by the photodetector structure 126c (e.g., the amplitude of the current or voltage of the electrical signal) may be based on the intensity of the optical signal received at the photodetector structure 126c. Electrons propagate through the closed-loop optical waveguide structure 124 to the terminal sections (310 and 312) corresponding to the collection regions of the electrons generated by the absorption region 314.

[0058] Absorption region 314 may include an epitaxial growth region of semiconductor material, including germanium (Ge), germanium-tin (GeSn), silicon-germanium (SiGe), indium gallium arsenide (InGaAs), and / or gallium arsenide (GaAs) and other examples. Photons of the optical signal received at photodetector structure 126c interact with electron-hole pairs in the semiconductor material of absorption region 314. This interaction causes electrons and holes to separate and migrate toward opposing terminal segments (310, 312) (e.g., opposing collection regions), thereby generating an electric field (e.g., an embedded electric field).

[0059] The portion of the photodetector structure 126c of the optical waveguide circuit 110 may be doped to facilitate the flow of electrons and / or holes between the absorption region 314 and the terminal segments (310, 312). For example, the absorption region 314 may be contained within doped regions 316 and 318 of the optical waveguide circuit 110. As another example, a doped region 320 may be contained within the terminal segment 310 and may be adjacent to doped region 316, and a doped region 322 may be contained within the terminal segment 312 and may be adjacent to doped region 318. As another example, a doped region 324 may be contained above doped region 320 in the terminal segment 310, and a doped region 326 may be contained above doped region 322 in the terminal segment 312.

[0060] Doped regions (316, 320, and 324) may include semiconductor materials doped with a first doping type (e.g., n-type dopants of arsenic (As) and / or phosphorus (P), or p-type dopants of boron (B) and / or gallium (Ga), and doped regions (318, 322, and 326) may include semiconductor materials doped with a second doping type different from the first doping type. For example, doped regions (316, 320, and 324) may include n-type doped regions and doped regions (318, 322, and 326) may include p-type doped regions. Different dopant types facilitate the flow of electrons and holes from absorption region 314 to the opposite terminal segments (310 and 312).

[0061] Doped region 320 may have a higher doping concentration than doped region 316, and doped region 324 may have a higher doping concentration than doped region 320. Doped region 322 may have a higher doping concentration than doped region 318, and doped region 326 may have a higher doping concentration than doped region 322.

[0062] Metal silicide layers (328 and 330) may be incorporated on terminal segment 310 and photodetector structure 126c, respectively. Metal silicide layers (328 and 330) may each comprise titanium silicide (TiSi), ruthenium silicide (RuSi), and / or another type of metal silicide material. Metal silicide layers (328 and 330) provide a transition between the semiconductor material of the closed-loop optical waveguide structure 124c and the contact structures (332 and 334) formed on the terminal segments (310 and 312) of the photodetector structure 126c, respectively. Metal silicide layers (328 and 330) enable low contact resistance between the contact structures (332 and 334) and the terminal segments (310 and 312) of the photodetector structure 126c.

[0063] In some embodiments, the contact structures (332 and 334) may each comprise one or more electrically conductive materials, such as tungsten (W), cobalt (Co), ruthenium (Ru), titanium (Ti), aluminum (Al), copper (Cu), and / or gold (Au), as well as other examples of conductive materials. The contact structures (332 and 334) may each comprise through-holes, contact plugs, trenches, and / or another type of conductive structure.

[0064] The contact structures (332 and 334) may be electrically and / or physically coupled to one or more metallization layers 336 in the dielectric region 308. The metallization layers 336 correspond to circuitry, enabling signals and / or power to be supplied to and / or from other devices in the photodetector structure 126c and / or the semiconductor photonic device 100. Each metallization layer 336 may comprise one or more electrically conductive materials, such as tungsten (W), cobalt (Co), ruthenium (Ru), titanium (Ti), aluminum (Al), copper (Cu), and / or gold (Au), and other examples of conductive materials. Each metallization layer 336 may comprise vias, trenches, contact plugs, conductive pads, conductive pillars, and / or another type of metallization layer.

[0065] Contact structures (338 and 340) may also be included on the resonator heating structure 122c. The contact structures (338 and 340) can provide electrical input to the resonator heating structure 122c, such that the electrical input can be dissipated by the resonator heating structure 122c and converted into heat radiated to the optical resonator structure 120c to stabilize the operating temperature of the optical resonator structure 120c.

[0066] As mentioned above, Figure 3 Provided as an example. Other examples are available. Figure 3 The differences mentioned above.

[0067] Figure 4 This is a figure of an exemplary embodiment 400 of optical signal propagation in the semiconductor photonic device 100 described herein. Figure 4 As shown, an input optical signal 402 (e.g., an unpolarized input optical signal) can be received from the optical input fiber 404 at the edge coupler waveguide structure 104. The input optical signal 402 is a WDM optical signal with random polarization, which includes TM and TE components. The input optical signal 402 can propagate from the edge coupler waveguide structure 104 to the PSR waveguide structure 108 through the coupling waveguide structure 106.

[0068] The PSR waveguide structure 108 splits the input optical signal 402 into a TE-polarized optical signal and a TM-polarized optical signal (e.g., in...). Figure 2(as shown in the double tapering section 222). One of the TE polarized light signal or the TM polarized light signal propagates through the cross section 230 and is rotated to form a rotated polarized light signal 406, while the other of the TE polarized light signal or the TM polarized light signal propagates through the unmodified through section 228 as a polarized light signal.

[0069] In some embodiments, the TM-polarized light signal propagates through cross section 230, wherein the TM-polarized light signal is rotated to form a rotated TE-polarized light signal, which is coupled to branch 112a of the optical waveguide loop 110 at input 116. In these embodiments, the TE-polarized light signal propagates unmodified through through section 228 and is coupled to branch 112b of the optical waveguide loop 110 at input 116.

[0070] In some embodiments, the TE-polarized light signal propagates through cross section 230, wherein the TE-polarized light signal is rotated to form a rotated TM-polarized light signal, which is coupled to branch 112a of the optical waveguide loop 110 at input 116. The TM-polarized light signal propagates unmodified through through section 228 and is coupled to branch 112b of the optical waveguide loop 110 at input 116.

[0071] The rotated polarized light signal 406 propagates in the x-direction through branch 112a toward the loop end 114 of the optical waveguide loop 110 until it reaches the optical resonator structure 120a of the wavelength component multiplexing circuit 118a. The optical resonator structure 120a is configured to resonate with a specific wavelength component of the rotated polarized light signal 406 to extract the data stream associated with that wavelength component. The wavelength component of the rotated polarized light signal 406 propagates around the optical resonator structure 120a and couples to the closed-loop optical waveguide structure 124a. The wavelength component of the rotated polarized light signal 406 propagates along the closed-loop optical waveguide structure 124a until it reaches the photodetector structure 126a, where it is converted into an electrical signal.

[0072] The polarized light signal 408 propagates in the x-direction through branch 112b toward the loop end 114 of the optical waveguide loop 110, propagates through loop end 114, and propagates through branch 112a toward the input end 116 until the polarized light signal 408 reaches the optical resonator structure 120a. The optical resonator structure 120a is configured to resonate a specific wavelength component of the polarized light signal 408 (e.g., the same wavelength component extracted from the rotated polarized light signal 406) to extract the data stream associated with the wavelength component of the polarized light signal 408. The wavelength component of the polarized light signal 408 propagates around the optical resonator structure 120a and couples to the closed-loop optical waveguide structure 124a. The wavelength component of the polarized light signal 408 propagates along the closed-loop optical waveguide structure 124a until it reaches the photodetector structure 126a, where the wavelength component of the polarized light signal 408 is converted into an electrical signal.

[0073] In this manner, the rotated polarized light signal 406 and the polarized light signal 408 propagate in opposite directions around the optical waveguide loop 110, in opposite directions around the optical resonator structure 120a, and in opposite directions around the closed-loop optical waveguide structure 124a. The polarized light signal 408 propagates through the optical resonator structure 120a in a clockwise optical propagation path, and the rotated polarized light signal 406 propagates through the optical resonator structure 120a in a counterclockwise optical propagation path. This allows a single optical resonator structure 120a to optically couple the rotated polarized light signal 406 and the polarized light signal 408 from the optical waveguide loop 110 to the closed-loop optical waveguide structure 124a (e.g., in contrast to having separate optical resonator structures for optically coupling each of the rotated polarized light signal 406 and the polarized light signal 408).

[0074] The length (e.g., size D1) of the closed-loop optical waveguide structure 124a and the position of the photodetector structure 126a along the closed-loop optical waveguide structure 124a are configured such that the propagation distance of the rotated polarized light signal 406 (e.g., from the PSR waveguide structure 108 to the photodetector structure 126a) and the propagation distance of the polarized light signal 408 (e.g., from the PSR waveguide structure 108 to the photodetector structure 126a) are approximately the same. This ensures that the rotated polarized light signal 406 and the polarized light signal 408 are synchronized at the photodetector structure 126a.

[0075] At photodetector structure 126a, "synchronization" refers to the percentage by which the optical delay time difference between the received rotating polarized light signal 406 and the received polarized light signal 408 at photodetector structure 126a is less than the threshold value of the pulse width of the input light signal 402. For example, if the optical delay time difference between the reception of rotating polarized light signal 406 and polarized light signal 408 at photodetector structure 126a is less than approximately 30% of the pulse width of the input light signal 402, then rotating polarized light signal 406 and polarized light signal 408 can be synchronized. However, other threshold values ​​are also within the scope of this disclosure.

[0076] Wavelength component multiplexing circuits (118b-118f) can be configured similarly to multiplex other wavelength components of the rotated polarized light signal 406 and the polarized light signal 408. The diameter of the optical waveguide loop 110 (in...) Figure 4 The size, denoted as D7 (which may correspond to the lengths of branches 112a and 112b of the optical waveguide loop 110), can be determined to accommodate a specific number of wavelength component multiplexing circuitry, such that a specific number of wavelength components can be multiplexed. In some embodiments, the diameter of the optical waveguide loop 110 is contained in the range of approximately 1000 micrometers to approximately 2000 micrometers. However, other values ​​and ranges are also within the scope of this disclosure.

[0077] As mentioned above, Figure 4 Provided as an example. Other examples are available. Figure 4 The differences mentioned above.

[0078] Figure 5This is a diagram of example 500 of the input optical signal 402 described herein. As stated above, if the optical delay time difference between the received rotated polarized optical signal 406 and the received polarized optical signal 408 at the photodetector structure 126a is less than a threshold percentage of the optical signal pulse width (size D8) of the optical signal pulse 502 of the input optical signal 402, then the rotated polarized optical signal 406 and the polarized optical signal 408 can be synchronized. The optical signal pulse width (size D8) can be based on the data rate of the input optical signal 402. For example, if the data rate of the input optical signal 402 is approximately 50 gigabits per second (Gb / s), then the optical signal pulse width (size D8) can be approximately 20 picoseconds. If the synchronization threshold percentage is approximately 30%, then the acceptable optical delay time difference between the reception of the rotated polarized optical signal 406 and the polarized optical signal 408 can be approximately 6 picoseconds. In embodiments where the optical waveguide loop 110, optical resonator structure 120a, and closed-loop optical waveguide structure 124a are silicon (Si) waveguides, a 6-picosecond optical delay time can correspond to a maximum distance difference of approximately 600 micrometers between the propagation distance of the rotated polarized light signal 406 (e.g., from the PSR waveguide structure 108 to the photodetector structure 126a) and the propagation distance of the polarized light signal 408 (e.g., from the PSR waveguide structure 108 to the photodetector structure 126a). However, this is an example, and other data rates, optical signal pulse widths, threshold percentages, and optical delay times are also within the scope of this disclosure.

[0079] As mentioned above, Figure 5 Provided as an example. Other examples are available. Figure 5 The differences mentioned above.

[0080] Figure 6 This is a figure of an exemplary embodiment 600 of a wavelength component multiplexing circuit 118 as described herein. Wavelength component multiplexing circuit 118 may correspond to one and / or another wavelength component multiplexing circuit (118b-118f).

[0081] like Figure 6As shown, the wavelength component multiplexing circuit 118 includes a closed-loop optical waveguide structure 124 (e.g., a delay line) and a photodetector structure 126 optically coupled to the closed-loop optical waveguide structure 124. The photodetector structure 126 can be positioned along the closed-loop optical waveguide structure 124 such that the distance (magnitude D3) along a first optical propagation path between the photodetector structure 126 and the position where the optical signal is coupled to the closed-loop optical waveguide structure 124 along the closed-loop optical waveguide structure 124, and the distance (magnitude D4) along a second optical propagation path between the photodetector structure 126 and the position where the optical signal is coupled to the closed-loop optical waveguide structure 124 along the closed-loop optical waveguide structure 124, are unequal distances. The photodetector structure 126 can be positioned such that the distance (size D3) of the first optical propagation path is greater than the distance (size D4) of the second optical propagation path to compensate for the larger signal propagation distance of the optical signal propagating along the second optical propagation path of the closed-loop optical waveguide structure 124 along the optical waveguide loop 110, and to compensate for the smaller signal propagation distance of the optical signal propagating along the first optical propagation path of the closed-loop optical waveguide structure 124 along the optical waveguide loop 110.

[0082] A photodetector may be included in the main section 602 of the closed-loop optical waveguide structure 124. One or more extension sections (604a to 604n) may be optically coupled to the main section through a transition section 606. The length and / or number of the extension sections (604a to 604n) may be selected to achieve the total length of the closed-loop optical waveguide structure 124, thereby achieving a specific amount of propagation delay and / or promoting the optical coupling of a specific wavelength component to the wavelength component multiplexing circuit 118. Thus, two or more wavelength component multiplexing circuits 118 may include closed-loop optical waveguide structures 124 with different numbers of extension sections (604a to 604n) and / or different lengths of extension sections (604a to 604n) to achieve different amounts of propagation delay and / or promote the optical coupling of different wavelength components.

[0083] exist Figure 6 In the example shown, the main segment 602 and the extension segments (604a to 604n) form an overall serpentine top-view shape, wherein the extension segments (604a to 604n) are stacked on top of each other. However, other arrangements of the main segment 602 and the extension segments (604a to 604n) may include different top-view shapes, including circular, elliptical, zigzag, and / or non-standard shapes.

[0084] As mentioned above, Figure 6 Provided as an example. Other examples are available. Figure 6 The differences mentioned above.

[0085] Figures 7A to 7MThis is a diagram illustrating an exemplary embodiment 700 of the semiconductor photonic device 100 (or a portion thereof) described herein. In some embodiments, combined with Figures 7A to 7M One or more of the operations described may be performed using one or more semiconductor processing tools (e.g., deposition tools, exposure tools, development tools, etching tools, planarization tools, ion implantation tools, annealing tools and / or wafer / die transport tools and other examples).

[0086] Instead of referring to Figure 7A A substrate 702 may be provided. The substrate 702 may include a silicon-on-insulator (SOI) substrate comprising a substrate layer 302 (e.g., a silicon (Si) substrate and / or another type of semiconductor substrate), a portion of a dielectric region 304 on and / or the substrate layer 302 (e.g., a buried oxide (BOX) or bottom oxide (BOX) layer and / or another type of insulating layer), and a semiconductor layer 704 (e.g., a silicon (Si) layer and / or another type of semiconductor layer) on and / or the portion of the dielectric region 304. Alternatively, the substrate layer 302 may be provided as a semiconductor wafer, and deposition tools may be used to form the portion of the dielectric region 304 on and / or the substrate layer 302, and may form the semiconductor layer 704 on and / or the dielectric region 304. The deposition tool can be used to deposit the portion of dielectric region 304 using chemical vapor deposition (CVD), physical vapor deposition (PVD), oxidation techniques (e.g., thermal oxidation), and / or other types of techniques. The deposition tool can also be used to form semiconductor layer 704 using epitaxial technology and / or another type of deposition technique.

[0087] like Figure 7B and Figure 7C As shown, one or more photonic components of the semiconductor photonic device 100 may be formed from the semiconductor layer 704. For example, the coupling waveguide structure 106 and / or the PSR waveguide structure 108 may be formed from the semiconductor layer 704. As another example, the optical waveguide loop 110 of the optical multiplexing circuit 102 may be formed from the semiconductor layer 704. As another example, the closed-loop optical waveguide structure (124a-124f) of the optical resonator structure (120a-120f) and / or the wavelength component multiplexing circuit (118a-118f) of the optical multiplexing circuit 102 may be formed from the semiconductor layer 704.

[0088] Each wavelength component multiplexer circuit can form a single optical resonator structure and a single closed-loop optical waveguide structure. For example, wavelength component multiplexer circuit 118a can form optical resonator structure 120a and closed-loop optical waveguide structure 124a, wavelength component multiplexer circuit 118b can form optical resonator structure 120b and closed-loop optical waveguide structure 124b, and so on.

[0089] like Figure 7B As shown, the optical waveguide loop 110 can be configured to include an open input terminal 116 and a closed loop terminal 114, wherein the input terminal 116 and the loop terminal 114 are located at opposite ends of branches 112a and 112b of the optical waveguide loop 110. The optical waveguide loop 110 can be configured such that the input terminal 116 (e.g., the open terminal) of the optical waveguide loop 110 is optically coupled to the PSR waveguide structure 108.

[0090] The optical resonator structures (120a-120f) can each be formed as one side adjacent to the optical waveguide loop 110. For example, the optical resonator structures (120a-120c) can be formed as a first side adjacent to the optical waveguide loop 110 (e.g., adjacent to branch 112a), and the optical resonator structures (120d, 120e, 120f) can be formed as a second side adjacent to the optical waveguide loop 110 opposite to the first side (e.g., adjacent to branch 112b).

[0091] Closed-loop optical waveguide structures (124a-124f) can be formed adjacent to optical resonator structures (120d-120f), respectively. Therefore, optical resonator structures (120d-120f) can be formed between optical waveguide loop 110 and closed-loop optical waveguide structures (124a-124f), respectively. Furthermore, closed-loop optical waveguide structures (124a-124c) can be formed on a first side (e.g., adjacent branch 112a) of optical waveguide loop 110, and closed-loop optical waveguide structures (124d-124f) can be formed on a second side (e.g., adjacent branch 112b) of optical waveguide loop 110 opposite to the first side.

[0092] Closed-loop optical waveguide structures (124a and 124d) can be formed as the input end 116 closest to the optical waveguide loop 110. Closed-loop optical waveguide structures (124c and 124f) can be formed as the loop end 114 closest to the optical waveguide loop 110. Closed-loop optical waveguide structure 124b can be laterally formed in the x-direction between closed-loop optical waveguide structures (124a and 124c). Closed-loop optical waveguide structure 124e can be laterally formed in the x-direction between closed-loop optical waveguide structures (124d and 124f).

[0093] The closed-loop optical waveguide structure 124a may be formed to have a length (size D1) greater than the lengths (size D2, size D3) of the closed-loop optical waveguide structures 124b and 124c. The closed-loop optical waveguide structure 124b may be formed to have a length (size D2) greater than the length (size D3) of the closed-loop optical waveguide structure 124c but less than the length (size D1) of the closed-loop optical waveguide structure 124a. The closed-loop optical waveguide structure 124c may be formed to have a length (size D3) smaller than the lengths (size D1, size D2) of the closed-loop optical waveguide structures (124a and 124b).

[0094] The closed-loop optical waveguide structure 124d can be formed to have a length (size D4) greater than the length (size D5, size D6) of the closed-loop optical waveguide structures (124e and 124f). The closed-loop optical waveguide structure 124e can be formed to have a length (size D5) greater than the length (size D6) of the closed-loop optical waveguide structure 124f but less than the length (size D4) of the closed-loop optical waveguide structure 124d. The closed-loop optical waveguide structure 124f can be formed to have a length (size D6) smaller than the length (size D4, size D5) of the closed-loop optical waveguide structures (124d and 124e).

[0095] The closed-loop optical waveguide structure 124a may be formed to have a length (size D1) greater than the length (size D5, size D6) of the closed-loop optical waveguide structures (124e and 124f). The closed-loop optical waveguide structure 124e may be formed to have a length (size D5) greater than the length (size D3) of the closed-loop optical waveguide structure 124c and less than the length (size D1) of the closed-loop optical waveguide structure 124a. The closed-loop optical waveguide structure 124e may be formed to have a length (size D6) smaller than the length (size D1, size D2) of the closed-loop optical waveguide structures (124a and 124b).

[0096] The closed-loop optical waveguide structure 124d can be formed to have a length (size D4) greater than the lengths (size D2, size D3) of the closed-loop optical waveguide structures (124b and 124c). The closed-loop optical waveguide structure 124b can be formed to have a length (size D2) greater than the length (size D6) of the closed-loop optical waveguide structure 124f and less than the length (size D4) of the closed-loop optical waveguide structure 124d. The closed-loop optical waveguide structure 124c can be formed to have a length (size D3) smaller than the lengths (size D4, size D5) of the closed-loop optical waveguide structures (124d and 124e).

[0097] like Figure 7C As shown, the coupled waveguide structure 106, PSR waveguide structure 108, optical waveguide loop 110, optical resonator structure (120a-120f), and / or closed-loop optical waveguide structure (124a-124f) can be formed from the same semiconductor layer 704 as the semiconductor photonic device 100. The semiconductor layer 704 can be etched based on one or more patterned mask layers to form the coupled waveguide structure 106, PSR waveguide structure 108, optical waveguide loop 110, optical resonator structure (120a-120f), and / or closed-loop optical waveguide structure (124a-124f).

[0098] In some implementations, multiple patterning and etching operations are performed to form a coupled waveguide structure 106, a PSR, a waveguide structure 108, an optical waveguide loop 110, an optical resonator structure (120a-120f), and / or a closed-loop optical waveguide structure (124a-124f) from the semiconductor layer 704. For example, a first mask layer may be patterned in a first patterning operation and used to etch the semiconductor layer 704 in a first etching operation; a second mask layer may be patterned in a second patterning operation and used to etch the semiconductor layer 704 in a second etching operation; a third mask layer may be patterned in a third patterning operation and used to etch the semiconductor layer 704 in a third etching operation, and so on. The etching operations may include dry etching operations (e.g., plasma-based etching operations, gas-based etching operations), wet chemical etching operations, and / or another type of etching operation.

[0099] Additionally and / or alternatively, one or more of the coupled waveguide structure 106, PSR waveguide structure 108, optical waveguide loop 110, optical resonator structure (120a-120f) and / or closed-loop optical waveguide structure (124a-124f) may be formed by a deposited, patterned and etched dielectric layer.

[0100] like Figure 7DAs shown, additional material for dielectric region 304 can be deposited around coupling waveguide structure 106, PSR waveguide structure 108, optical waveguide loop 110, optical resonator structures (120a-120f), and / or closed-loop optical waveguide structures (124a-124f). This additional material may be referred to as the shallow trench isolation (STI) portion of dielectric region 304. Deposition tools can be used to deposit the additional material for dielectric region 304 using PVD, atomic layer deposition (ALD), CVD, oxidation, and / or another suitable deposition technique. In some embodiments, after depositing the additional material for dielectric region 304, planarization tools can be used to perform a planarization operation (e.g., chemical-mechanical planarization (CMP)) to planarize dielectric region 304.

[0101] like Figure 7E As shown, portions of the closed-loop optical waveguide structures (124a-124f) can be doped separately as part of forming photodetector structures (126a-126f) on the closed-loop optical waveguide structures (124a-124f). For example, the closed-loop optical waveguide structures (124a-124f) can be doped with a first doping type to form doped regions (316, 320, and / or 324). As another example, the closed-loop optical waveguide structures (124a-124f) can be doped with a second doping type to form doped regions (318, 322, and / or 326). The first and second doping types can be different doping types. For example, the doped regions (316, 320, and 324) can be doped with n-type dopant, and the doped regions (318, 322, and 326) can be doped with p-type dopant. As another example, doped regions (316, 320, and 324) can be doped with p-type dopants, and doped regions (318, 322, and 326) can be doped with n-type dopants.

[0102] In some embodiments, ions are implanted into said portions of the closed-loop optical waveguide structure (124a-124f) using an ion implantation tool to form doped regions (316-326). In these embodiments, dopant ions (e.g., n-type ions, p-type ions) can be accelerated toward said portions of the closed-loop optical waveguide structure (124a-124f) and implanted into said portions of the closed-loop optical waveguide structure (124a-124f) to form doped regions (316-326). In some embodiments, the doped regions (316-326) are formed using another doping technique (e.g., diffusion).

[0103] like Figure 7F As shown, additional material for dielectric region 304 can be deposited over coupled waveguide structure 106, PSR waveguide structure 108, optical waveguide loop 110, optical resonator structure (120a-120f), and / or closed-loop optical waveguide structure (124a-124f). Deposition tools can be used to deposit additional material for dielectric region 304 using PVD, ALD, CVD, oxidation, and / or another suitable deposition technique. In some embodiments, after depositing additional material for dielectric region 304, planarization tools can be used to perform planarization operations (e.g., CMP) to planarize dielectric region 304.

[0104] like Figure 7G and Figure 7H As shown, the absorption region 314 of the photodetector structure (126a-126f) can be formed on the closed-loop optical waveguide structure (124a-124f). Forming the absorption region 314 may include forming a recess in the closed-loop optical waveguide structure (124a-124f) and forming the absorption region 314 in the recess. The recess may be formed in the portions of the doped regions (316 and 318).

[0105] In some embodiments, a pattern in the photoresist layer is used to etch the closed-loop optical waveguide structure (124a-124f) to form a recess. In these embodiments, a photoresist layer can be formed on the semiconductor photonic device 100 using a deposition tool (e.g., using spin coating and / or another suitable deposition technique). An exposure tool can be used to expose the photoresist layer to a radiation source to pattern the photoresist layer. A development tool can be used to develop and remove portions of the photoresist layer to expose the pattern. An etching tool can be used to etch the closed-loop optical waveguide structure (124a-124f) based on the pattern to form the recess. In some embodiments, the etching operation includes dry etching operations (e.g., plasma-based etching operations, gas-based etching operations), wet chemical etching operations, and / or another type of etching operation. In some embodiments, a photoresist removal tool can be used to remove the remaining portion of the photoresist layer (e.g., using chemical stripping, plasma ashing, and / or other techniques). In some embodiments, a hard mask layer is used as an alternative technique for pattern-based recess formation.

[0106] The recess can be filled with epitaxially grown semiconductor material to form the absorption region 314 of the photodetector structure (126a-126f). The epitaxially grown semiconductor material can be a different material from the semiconductor material of the closed-loop optical waveguide structure (124a-124f). For example, the epitaxially grown semiconductor material may include germanium (Ge), while the semiconductor material of the closed-loop optical waveguide structure (124a-124f) may include doped silicon (Si). Deposition tools can be used to epitaxially grow the semiconductor material of the absorption region 314 using epitaxial technology. Alternatively and / or, ALD technology, CVD technology, and / or another suitable deposition technology can be used to deposit the absorption region 314.

[0107] Additional material for dielectric region 304 may be formed on semiconductor photonic device 100, including absorption region 314 above photodetector structure (126a-126f). Deposition tools may be used to deposit additional material for dielectric region 304 using PVD, ALD, CVD, oxidation, and / or another suitable deposition technique.

[0108] like Figure 7I As shown, dielectric regions 304 can be etched to expose the tops of terminal segments (310 and 312) of the photodetector structures (126a-126f), and metal silicide layers (328 and 330) can be formed on the terminal segments (310 and 312), respectively. Forming the metal silicide layers (328 and 330) may include depositing layers of metallic material (e.g., titanium (Ti), cobalt (Co), ruthenium (Ru), and / or nickel (Ni) and other examples) on the terminal segments (310 and 312) of the photodetector structures (126a-126f). Deposition tools can be used to deposit the metallic material using PVD, ALD, CVD, electroplating, and / or another suitable deposition technique. Annealing tools can be used to perform an annealing operation to diffuse the metallic material into the terminal segments (310 and 312) of the photodetector structures (126a-126f) to form the metal silicide layers (328 and 330).

[0109] like Figure 7I As further shown, an etch stop layer 306 may be formed on the dielectric region 304 and on the metal silicide layers (328 and 330). Deposition tools may be used to deposit the etch stop layer 306 using PVD, ALD, CVD, and / or another suitable deposition technique.

[0110] like Figure 7IAs further shown, a portion of the dielectric region 308 may be formed on the etch stop layer 306. Deposition tools may be used to deposit said portion of the dielectric region 308 using PVD, ALD, CVD, and / or another suitable deposition technique. The portion of the dielectric region 308 may be formed in one or more deposition operations. In some embodiments, after depositing said portion of the dielectric region 308, a planarization operation (e.g., CMP operation) is performed using a planarization tool to planarize said portion of the dielectric region 308.

[0111] like Figure 7J As shown, resonator heating structures (122a-122f) can form wavelength component multiplexing circuits (118a-118f). In some embodiments, the resonator heating structures (122a-122f) are formed within the perimeter of the optical resonator structures (120a-120f). Alternatively and / or, one or more resonator heating structures (122a-122f) may be formed outside the perimeter of the optical resonator structures (120a-120f).

[0112] like Figure 7K As shown, resonator heating structures (122a-122f) may be formed in dielectric region 308. Alternatively and alternatively, one or more resonator heating structures (122a-122f) may be formed in dielectric region 304. To form the resonator heating structures (122a-122f), a recess may be formed in dielectric region 308, and the resonator heating structures (122a-122f) may be deposited in said recess.

[0113] In some embodiments, a pattern in the photoresist layer is used to etch the dielectric region 308 to form a recess. In these embodiments, a deposition tool can be used to form the photoresist layer on the dielectric region 308 (e.g., using spin coating and / or another suitable deposition technique). An exposure tool can be used to expose the photoresist layer to a radiation source to pattern the photoresist layer. A development tool can be used to develop and remove portions of the photoresist layer to expose the pattern. An etching tool can be used to etch the dielectric region 308 based on the pattern to form a recess. In some embodiments, the etching operation includes dry etching operations (e.g., plasma-based etching operations, gas-based etching operations), wet chemical etching operations, and / or another type of etching operation. In some embodiments, a photoresist removal tool can be used to remove the remaining portions of the photoresist layer (e.g., using chemical stripping, plasma ashing, and / or other techniques). In some embodiments, a hard mask layer is used as an alternative technique for pattern-based recess formation.

[0114] Deposition tools can be used to deposit resonator heating structures (122a-122f) in depressions using CVD, PVD, ALD, electroplating, and / or another suitable deposition technique. The resonator heating structures (122a-122f) can be deposited in one or more deposition operations. In some embodiments, a seed layer is deposited first, and the resonator heating structures (122a-122f) are deposited on the seed layer. In some embodiments, after depositing the resonator heating structures (122a-122f), a planarization operation (e.g., CMP operation) is performed using a planarization tool to planarize the resonator heating structures (122a-122f).

[0115] like Figure 7L As shown, additional material for the dielectric region 308 can be formed above the resonator heating structure (122a-122f). Deposition tools can be used to deposit the additional material for the dielectric region 308 using PVD, ALD, CVD, and / or another suitable deposition technique. The additional material for the dielectric region 308 can be formed in one or more deposition operations. In some embodiments, after a portion of the additional material for the dielectric region 308 is deposited, a planarization operation (e.g., CMP operation) is performed using a planarization tool to planarize said portion of the dielectric region 308.

[0116] like Figure 7L As further shown, contact structures (332, 334, 338, and / or 340) may be formed in and / or through dielectric region 308, etch stop layer 306, and / or dielectric region 304. Contact structures 332 and 334 may extend through dielectric region 308 and etch stop layer 306 and into dielectric region 304 and may respectively land on the metal silicide layers (338 and 340) of photodetector structures (126a-126f). Contact structures (334 and 336) may extend into dielectric region 308 and may land on resonator heating structures (122a-122f).

[0117] Contact structures (332, 334, 338, and / or 340) may be formed in recesses extending through dielectric region 308, etch stop layer 306, and / or dielectric region 304. In some embodiments, a pattern in a photoresist layer is used to etch dielectric region 308, etch stop layer 306, and / or dielectric region 304 to form the recess. In these embodiments, deposition tools may be used to form a photoresist layer on dielectric region 308 (e.g., using spin coating and / or another suitable deposition technique). An exposure tool may be used to expose the photoresist layer to a radiation source to pattern the photoresist layer. A development tool may be used to develop and remove portions of the photoresist layer to expose the pattern. An etching tool may be used to etch dielectric region 308, etch stop layer 306, and / or dielectric region 304 based on the pattern to form the recess. In some embodiments, the etching operation includes dry etching operations (e.g., plasma-based etching operations, gas-based etching operations), wet chemical etching operations, and / or another type of etching operation. In some embodiments, a photoresist removal tool can be used to remove the remainder of the photoresist layer (e.g., using chemical stripping, plasma ashing, and / or other techniques). In some embodiments, a hard mask layer is used as an alternative to pattern-based techniques for forming recesses.

[0118] Deposition tools can be used to deposit contact structures (332, 334, 338, and / or 340) using CVD, PVD, ALD, electroplating, and / or another suitable deposition technique. Contact structures (332, 334, 338, and / or 340) can be deposited in one or more deposition operations. In some embodiments, a seed layer is deposited first, and the contact structure (332, 334, 338, and / or 340) is deposited on the seed layer. In some embodiments, a liner is deposited first, and the contact structure (332, 334, 338, and / or 340) is deposited on the liner. The liner may include an adhesive liner, a barrier liner, and / or another type of liner, and may include liner materials such as titanium nitride (TiN) and / or tantalum nitride (TaN) and other examples. In some implementations, after depositing the contact structures (332, 334, 338 and / or 340), a planarization operation (e.g., CMP operation) is performed using a planarization tool to planarize the contact structures (332, 334, 338 and / or 340).

[0119] like Figure 7MAs shown, another portion of dielectric region 308 may be formed on the contact structure (332, 334, 338, and / or 340). Deposition tools may be used to deposit the other portion of dielectric region 308 using PVD, ALD, CVD, and / or another suitable deposition technique. The other portion of dielectric region 308 may be formed in one or more deposition operations. In some embodiments, after depositing the other portion of dielectric region 308, a planarization operation (e.g., CMP operation) is performed using a planarization tool to planarize the other portion of dielectric region 308.

[0120] like Figure 7M As further shown, a metallization layer 336 may be formed in the dielectric region 308. A recess may be formed in the dielectric region 308, and a metallization layer 336 may be formed in the recess. One or more metallization layers 336 may be formed such that one or more metallization layers 336 are disposed on the contact structures (332 and / or 334) of the photodetector structures (126a-126f). Additionally and / or alternatively, one or more metallization layers 336 may be formed such that one or more metallization layers 336 are disposed on the contact structures (338 and / or 340) of the resonator heating structures (122a-122f).

[0121] In some embodiments, a pattern in the photoresist layer is used to etch the dielectric region 308 to form a recess. In these embodiments, a deposition tool can be used to form the photoresist layer on the dielectric region 308 (e.g., using spin coating and / or another suitable deposition technique). An exposure tool can be used to expose the photoresist layer to a radiation source to pattern the photoresist layer. A developing tool can be used to develop and remove portions of the photoresist layer to expose the pattern. An etching tool can be used to etch the dielectric region 308 based on the pattern to form a recess. In some embodiments, the etching operation includes dry etching operations (e.g., plasma-based etching operations, gas-based etching operations), wet chemical etching operations, and / or another type of etching operation. In some embodiments, a photoresist removal tool can be used to remove the remaining portion of the photoresist layer (e.g., using chemical stripping, plasma ashing, and / or other techniques). In some embodiments, a hard mask layer is used as an alternative technique for pattern-based etching of the dielectric region 308.

[0122] Deposition tools can be used to deposit the metallization layer 336 using CVD, PVD, ALD, electroplating, and / or another suitable deposition technique. The metallization layer 336 can be deposited in one or more deposition operations. In some embodiments, a seed layer is deposited first, and then the metallization layer 336 is deposited on the seed layer. In some embodiments, after depositing the metallization layer 336, a planarization operation (e.g., CMP operation) is performed using a planarization tool to planarize the metallization layer 336.

[0123] As mentioned above, Figures 7A to 7M Provided as an example. Other examples are available. Figures 7A to 7M The differences mentioned above.

[0124] Figure 8 This is a flowchart of an example process 800 associated with the formation of the semiconductor photonic device described herein. In some embodiments, one or more semiconductor processing tools (e.g., deposition tools, exposure tools, development tools, etching tools, planarization tools, ion implantation tools, annealing tools, wafer / die transport tools, and / or other types of semiconductor processing tools) are used to perform the process. Figure 8 One or more process blocks.

[0125] like Figure 8 As shown, process 800 may include forming an optical waveguide circuit (block 810). For example, one or more semiconductor processing tools may be used to form the optical waveguide circuit (e.g., optical waveguide circuit 110), as described herein. In some embodiments, the optical waveguide circuit is open at a first end (e.g., input 116) and closed at a second end (e.g., loop end 114).

[0126] like Figure 8 As further shown, process 800 may include forming a first optical resonator structure (block 820) adjacent to a first side of the optical waveguide loop. For example, one or more semiconductor processing tools may be used to form a first optical resonator structure (e.g., optical resonator structures 120a-120f) adjacent to a first side (e.g., branch 112a) of the optical waveguide loop, as described herein.

[0127] like Figure 8 As further shown, process 800 may include forming a second optical resonator structure (block 830) adjacent to a second side of the optical waveguide loop. For example, one or more semiconductor processing tools may be used to form a second optical resonator structure (e.g., optical resonator structures 120a-120f) adjacent to a second side (e.g., branch 112a) of the optical waveguide loop, as described herein.

[0128] like Figure 8 As further shown, process 800 may include forming a first closed-loop optical waveguide structure (block 840) adjacent to the first optical resonator structure. For example, one or more semiconductor processing tools may be used to form the first closed-loop optical waveguide structure adjacent to the first optical resonator structure (e.g., closed-loop optical waveguide structures (124a-124f)), as described herein.

[0129] like Figure 8As further shown, process 800 may include forming a second closed-loop optical waveguide structure adjacent to the second optical resonator structure (block 850). For example, one or more semiconductor processing tools may be used to form the second closed-loop optical waveguide structure adjacent to the second optical resonator structure (e.g., closed-loop optical waveguide structures (124a-124f)), as described herein.

[0130] like Figure 8 As further shown, process 800 may include forming a first photodetector structure (block 860) on the first closed-loop optical waveguide structure. For example, one or more semiconductor processing tools may be used to form the first photodetector structure (e.g., photodetector structures (126a-126f)) on the first closed-loop optical waveguide structure, as described herein.

[0131] like Figure 8 As further shown, process 800 may include forming a second photodetector structure (block 870) on the second closed-loop optical waveguide structure. For example, one or more semiconductor processing tools may be used to form the second photodetector structure (e.g., photodetector structures (126a-126f)) on the second closed-loop optical waveguide structure, as described herein.

[0132] Process 800 may include additional embodiments, such as any single embodiment or any combination of embodiments described below and / or any combination of embodiments related to one or more other processes described elsewhere herein.

[0133] In a first embodiment, forming a first closed-loop optical waveguide structure includes forming a first closed-loop optical waveguide structure such that a first optical resonator structure is located between a first side of the optical waveguide loop and the first closed-loop optical waveguide structure, and forming a second closed-loop optical waveguide structure includes forming a second closed-loop optical waveguide structure such that a second optical resonator structure is located between a second side of the optical waveguide loop and the second closed-loop optical waveguide.

[0134] In the second embodiment, forming the second closed-loop optical waveguide structure alone or in combination with the first embodiment includes forming a second closed-loop optical waveguide structure that is closer to the second end of the optical waveguide loop than the first closed-loop optical waveguide structure, wherein the first length (e.g., size (D1-D6)) of the second closed-loop optical waveguide structure is smaller than the second length (e.g., size D1-D6) of the first closed-loop optical waveguide structure.

[0135] In the third embodiment, forming an optical waveguide circuit, forming a first optical resonator structure, forming a first closed-loop optical waveguide structure, forming a second optical resonator structure, and forming a second closed-loop optical waveguide structure, either alone or in combination with one or more of the first and second embodiments, includes forming an optical waveguide circuit, forming a first optical resonator structure, forming a first closed-loop optical waveguide structure, forming a second optical resonator structure, and forming a second closed-loop optical waveguide structure from the same semiconductor layer 704 of the semiconductor photonic device 100.

[0136] In the fourth embodiment, alone or in combination with one or more of the first to third embodiments, process 800 includes forming a third optical resonator structure (e.g., optical resonator structures 120a-120f) adjacent to a first side of the optical waveguide loop and adjacent to a first optical resonator structure, forming a third closed-loop optical waveguide structure (e.g., closed-loop optical waveguide structures 124a-124f) adjacent to the third optical resonator structure and adjacent to a first closed-loop optical waveguide structure, and forming a third photodetector structure (e.g., photodetector structures 126a-126f) optically coupled to the third closed-loop optical waveguide structure.

[0137] In the fifth embodiment, forming a third closed-loop optical waveguide structure, alone or in combination with one or more of the first to fourth embodiments, includes forming a third closed-loop optical waveguide structure that is closer to the second end of the optical waveguide loop than the first closed-loop optical waveguide structure, wherein the first length (e.g., size D1-D6) of the third closed-loop optical waveguide structure is smaller than the second length (e.g., size D1-D6) of the first closed-loop optical waveguide structure.

[0138] Although Figure 8 Example blocks from process 800 are shown, but in some embodiments, process 800 includes... Figure 8 The blocks shown are those that are additional, fewer, different, or arranged differently compared to other blocks. Alternatively, two or more blocks in process 800 can be executed in parallel.

[0139] In this manner, the photonic integrated circuit of the semiconductor photonic device includes an optical multiplexing circuit configured to use the same set of photonic components to multiplex multiple polarized optical signals. For example, a WDM optical signal can be split into two or more polarized optical signals, each carrying multiple data streams multiplexed to different wavelength components. The optical resonator structure, optical waveguide structure, and photodetector structure of the optical multiplexing circuit are configured to multiplex wavelength components from the two or more polarized optical signals, as opposed to having a separate optical resonator structure for each of the two or more polarized optical signals. The two or more polarized optical signals can propagate along the optical waveguide loop in opposite directions toward the optical resonator structure and can be optically coupled to the waveguide structure through the optical resonator structure. The length of the optical waveguide structure and the positioning of the photodetector structure along the optical waveguide structure are chosen such that the two or more polarized optical signals travel approximately the same distance to the photodetector structure, thereby synchronizing the two or more polarized optical signals at the photodetector structure.

[0140] As described in more detail above, some embodiments described herein provide a semiconductor photonic device. The semiconductor photonic device includes a beam splitter structure. The semiconductor photonic device includes an optical waveguide loop adjacent to the beam splitter structure. The semiconductor photonic device includes an optical resonator structure adjacent to the optical waveguide loop. The semiconductor photonic device includes a closed-loop optical waveguide structure adjacent to the optical resonator structure. The semiconductor photonic device includes a photodetector structure optically coupled to the closed-loop optical waveguide structure.

[0141] In some embodiments, a first branch and a second branch of the optical waveguide loop are physically coupled together at a first end of the optical waveguide loop; and wherein the first branch and the second branch are spaced apart and disconnected at a second end of the optical waveguide loop opposite to the first end. In some embodiments, a first optical propagation path along the first branch and along the closed-loop optical waveguide structure to the photodetector structure has a first distance, wherein a second optical propagation path along the second branch, through the first end, along the first branch and along the closed-loop optical waveguide structure to the photodetector structure has a second distance, and wherein the first distance and the second distance are approximately equal. In some embodiments, the first branch and the second branch are coupled to the beam splitter structure at the second end of the optical waveguide loop. In some embodiments, the optical resonator structure is located outside the perimeter of the optical waveguide loop. In some embodiments, the closed-loop optical waveguide structure is located outside the perimeter of the optical waveguide loop. In some embodiments, the optical resonator structure is located between the optical waveguide loop and the closed-loop optical waveguide structure.

[0142] As described in more detail above, some embodiments described herein provide a semiconductor photonic device. The semiconductor photonic device includes a beam splitter structure. The semiconductor photonic device includes an optical waveguide loop adjacent to the beam splitter structure, including a first branch coupled to a first output of the beam splitter structure at a first end of the optical waveguide loop and a second branch coupled to a second output of the beam splitter structure at the first end of the optical waveguide loop, wherein the first branch and the second branch are coupled together at a second end of the optical waveguide loop opposite to the first end. The semiconductor photonic device includes a first optical resonator structure adjacent to the first branch of the optical waveguide loop. The semiconductor photonic device includes a first closed-loop optical waveguide structure adjacent to the first optical resonator structure, wherein the first closed-loop optical waveguide structure has a first length. The semiconductor photonic device includes a first photodetector structure optically coupled to the first closed-loop optical waveguide structure. The semiconductor photonic device includes a second optical resonator structure adjacent to the first branch of the optical waveguide loop. The semiconductor photonic device includes a second closed-loop optical waveguide structure adjacent to the second optical resonator structure, wherein the second closed-loop optical waveguide structure has a second length different from the first length. The semiconductor photonic device includes a second photodetector structure optically coupled to a second closed-loop optical waveguide structure.

[0143] In some embodiments, the first closed-loop optical waveguide structure is closer to the first end of the optical waveguide loop than the second closed-loop optical waveguide structure; and the first length of the first closed-loop optical waveguide structure is greater than the second length of the second closed-loop optical waveguide structure. In some embodiments, the semiconductor photonic device further includes a third optical resonator structure adjacent to the second branch of the optical waveguide loop, a third closed-loop optical waveguide structure adjacent to the third optical resonator structure, and a third photodetector structure optically coupled to the third closed-loop optical waveguide structure, wherein the first closed-loop optical waveguide structure has a third length. In some embodiments, the first closed-loop optical waveguide structure and the third closed-loop optical waveguide structure are located outside the perimeter of the optical waveguide loop. In some embodiments, the first length of the first closed-loop optical waveguide structure and the third length of the third closed-loop optical waveguide structure are approximately equal. In some embodiments, the first closed-loop optical waveguide structure includes a main section of the first photodetector structure in the main section and one or more extended sections optically coupled to the main section. In some embodiments, the second closed-loop optical waveguide structure includes another main segment of the second photodetector structure in the other main segment and one or more other extension segments optically coupled to the other main segment, wherein the first number of the one or more extension segments of the first closed-loop optical waveguide structure and the second number of the one or other extension segments of the second closed-loop optical waveguide structure are different numbers.

[0144] As described in more detail above, some embodiments described herein provide a method. The method includes forming an optical waveguide loop, wherein the optical waveguide loop is open at a first end and closed at a second end. The method includes forming a first optical resonator structure adjacent to the first side of the optical waveguide loop. The method includes forming a second optical resonator structure adjacent to the second side of the optical waveguide loop. The method includes forming a first closed-loop optical waveguide structure adjacent to the first optical resonator structure. The method includes forming a second closed-loop optical waveguide structure adjacent to the second optical resonator structure. The method includes forming a first photodetector structure on the first closed-loop optical waveguide structure. The method includes forming a second photodetector structure on the second closed-loop optical waveguide structure.

[0145] In some embodiments, forming the first closed-loop optical waveguide structure includes forming the first closed-loop optical waveguide structure such that the first optical resonator structure is located between the first side of the optical waveguide loop and the first closed-loop optical waveguide structure; and wherein forming the second closed-loop optical waveguide structure includes forming the second closed-loop optical waveguide structure such that the second optical resonator structure is located between the second side of the optical waveguide loop and the second closed-loop optical waveguide structure. In some embodiments, forming the second closed-loop optical waveguide structure includes forming a second closed-loop optical waveguide structure closer to the second end of the optical waveguide loop than the first closed-loop optical waveguide structure, wherein a first length of the second closed-loop optical waveguide structure is less than a second length of the first closed-loop optical waveguide structure. In some embodiments, forming the optical waveguide loop, forming the first optical resonator structure, forming the first closed-loop optical waveguide structure, forming the second optical resonator structure, and forming the second closed-loop optical waveguide structure includes forming the optical waveguide loop, the first optical resonator structure, the first closed-loop optical waveguide structure, the second optical resonator structure, and the second closed-loop optical waveguide structure from the same semiconductor layer of the semiconductor photonic device. In some embodiments, the method further includes: forming a third optical resonator structure adjacent to the first side of the optical waveguide loop and adjacent to the first optical resonator structure; forming a third closed-loop optical waveguide structure adjacent to the third optical resonator structure and adjacent to the first closed-loop optical waveguide structure; and forming a third photodetector structure optically coupled to the third closed-loop optical waveguide structure. In some embodiments, forming the third closed-loop optical waveguide structure includes: forming the third closed-loop optical waveguide structure closer to the second end of the optical waveguide loop than the first closed-loop optical waveguide structure, wherein a first length of the third closed-loop optical waveguide structure is less than a second length of the first closed-loop optical waveguide structure.

[0146] The terms “approximately” and “substantially” can indicate that the value of a given quantity varies within 5% of that value (e.g., ±1%, ±2%, ±3%, ±4%, ±5% of the value). These values ​​are merely examples and are not intended to be limiting. It should be understood that, according to this disclosure, the terms “approximately” and “substantially” can refer to a percentage of the value of a given quantity.

[0147] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the embodiments of this utility model, and are not intended to limit it. Although the embodiments of this utility model have been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this utility model.

Claims

1. A semiconductor photonic device, characterized by, include: Spectrometer structure; An optical waveguide circuit is adjacent to the beam splitter structure; An optical resonator structure is adjacent to the optical waveguide circuit; A closed-loop optical waveguide structure is adjacent to the optical resonator structure; as well as A photodetector structure, optically coupled to the closed-loop optical waveguide structure.

2. The semiconductor photonic device of claim 1, wherein The first branch and the second branch of the optical waveguide loop are physically coupled together at the first end of the optical waveguide loop; and The first branch and the second branch are spaced apart and disconnected at the second end of the optical waveguide loop opposite to the first end.

3. The semiconductor photonic device of claim 2, wherein The first optical propagation path along the first branch and along the closed-loop optical waveguide structure to the photodetector structure has a first distance. The second optical propagation path, which runs along the second branch, through the first end, along the first branch, and along the closed-loop optical waveguide structure to the photodetector structure, has a second distance. The first distance and the second distance are equal.

4. The semiconductor photonic device of claim 2, wherein The first branch and the second branch are coupled to the beam splitter structure at the second end of the optical waveguide circuit.

5. The semiconductor photonic device of claim 1, wherein The optical resonator structure is located outside the perimeter of the optical waveguide loop.

6. The semiconductor photonic device of claim 5, wherein, The closed-loop optical waveguide structure is located outside the perimeter of the optical waveguide loop.

7. A semiconductor photonic device, characterized in that, include: Spectrometer structure; An optical waveguide circuit, adjacent to the beam splitter structure, includes: The first branch is coupled to the first output of the beam splitter structure at the first end of the optical waveguide circuit; and The second branch is coupled to the second output of the beam splitter structure at the first end of the optical waveguide circuit, wherein the first branch and the second branch are coupled together at the second end of the optical waveguide circuit opposite to the first end; The first optical resonator structure is adjacent to the first branch of the optical waveguide circuit; A first closed-loop optical waveguide structure is adjacent to the first optical resonator structure, wherein the first closed-loop optical waveguide structure has a first length; A first photodetector structure is optically coupled to the first closed-loop optical waveguide structure; a second optical resonator structure is adjacent to the first branch of the optical waveguide loop. A second closed-loop optical waveguide structure is adjacent to the second optical resonator structure, wherein the second closed-loop optical waveguide structure has a second length different from the first length; and The second photodetector structure is optically coupled to the second closed-loop optical waveguide structure.

8. The semiconductor photonic device of claim 7, wherein, The first closed-loop optical waveguide structure is closer to the first end of the optical waveguide loop than the second closed-loop optical waveguide structure; and The first length of the first closed-loop optical waveguide structure is greater than the second length of the second closed-loop optical waveguide structure.

9. The semiconductor photonic device of claim 7, wherein, Also includes: The third optical resonator structure is adjacent to the optical waveguide circuit and the second branch; A third closed-loop optical waveguide structure is adjacent to the third optical resonator structure, wherein the first closed-loop optical waveguide structure has a third length; as well as a third photodetector structure optically coupled to the third closed-loop optical waveguide structure.

10. The semiconductor photonic device of claim 7, wherein, wherein the first closed-loop optical waveguide structure comprises: a main section, the first photodetector structure being at the main section; and one or more extension sections optically coupled to the main section.

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