Power semiconductor module and electronic device

Abstract

The application relates to a power semiconductor module and an electronic device. The application comprises a support frame, a base island and externally connected pins; the base island comprises a first surface for placing a chip and a second surface opposite to the first surface; the chip is arranged on the first surface and electrically connected to the pins; a heat dissipation reinforcing member is arranged outside the second surface of the support frame and spaced from the second surface by a first preset gap; the heat dissipation reinforcing member is made of a material with a heat conductivity greater than a first preset heat conductivity coefficient; the heat dissipation reinforcing member comprises a first side facing the support frame and a second side opposite to the first side; a plastic encapsulation body encapsulates the support frame and the heat dissipation reinforcing member and fixes them together; the first preset gap is filled with the plastic encapsulation body; the pins are at least partially exposed outside the plastic encapsulation body; and an outer surface of the second side of the heat dissipation reinforcing member is at least partially exposed outside the plastic encapsulation body. The technical scheme of the application can improve the external heat dissipation capacity of the power semiconductor module.

Description

Technical Field

[0001] This application relates to the field of semiconductor manufacturing, and in particular to a power semiconductor module and electronic device. Background Technology

[0002] Power semiconductor modules are industrial products assembled and encapsulated (or plastic-encapsulated) by combining power semiconductor devices (such as IGBTs and MOSFETs) according to their circuit functions. Their core functions are power conversion and control. By integrating multiple power devices, they achieve high voltage and high current carrying capacity and are widely used in new energy vehicles, photovoltaic power generation, industrial control, and other fields. Furthermore, with the development of intelligent control technology, power semiconductor modules are gradually evolving into intelligent power modules. Due to the intelligent control of intelligent power modules, their power density is also increasing, and localized heat generation is becoming more severe. Failures caused by overheating have become one of the bottlenecks in the development of intelligent power modules. Utility Model Content

[0003] In view of this, this application provides a power semiconductor module and an electronic device to solve at least one problem existing in the prior art.

[0004] To achieve the above objectives, the technical solution of this application is implemented as follows:

[0005] In a first aspect, embodiments of this application provide a power semiconductor module, including:

[0006] The support frame includes a base island and pins for external electrical connection; the base island includes a first surface for placing the chip and a second surface opposite to it.

[0007] A chip is disposed on the first surface and electrically connected to the pins;

[0008] A heat dissipation reinforcement is located outside the second surface of the support frame and spaced apart from the second surface by a first preset gap; the heat dissipation reinforcement is made of a material with a thermal conductivity greater than the first preset thermal conductivity coefficient; the heat dissipation reinforcement includes a first side facing the support frame and a second side opposite to it;

[0009] A molding compound covers the support frame and the heat dissipation reinforcement and fixes them together, with the molding compound filling the first preset gap; the pins are at least partially exposed outside the molding compound; and the outer surface of the second side of the heat dissipation reinforcement is at least partially exposed outside the molding compound.

[0010] In one optional embodiment, the first preset gap is greater than or equal to 0.5 mm.

[0011] In an optional embodiment, the first preset thermal conductivity is greater than or equal to 150 W / (m·K).

[0012] In an alternative embodiment, the heat dissipation reinforcement is made of copper or a copper alloy.

[0013] In one optional embodiment, the outer surface of the second side of the heat dissipation reinforcement is rectangular in shape, and its area is greater than or equal to 90% of the surface area of ​​the first surface.

[0014] In one optional embodiment, at least one end of the heat dissipation reinforcement in the circumferential direction is provided with a stepped structure in the thickness direction of the encapsulation, and at least one layer of the stepped structure is wrapped by the encapsulation.

[0015] In one alternative embodiment, the surface roughness of the heat dissipation reinforcement in contact with the molding compound is between Ra0.1μm and Ra2.0μm.

[0016] In one alternative embodiment, the outer surface of the second side of the heat dissipation reinforcement is formed with a stamped recess, so that the inward-facing surface of the heat dissipation reinforcement can more firmly abut against the encapsulated body.

[0017] In one alternative embodiment, the surface of the power semiconductor module on the side where the heat dissipation reinforcement is provided has a pin hole, so that in the molding process, a pin passes through the pin hole and abuts against the base island of the support frame.

[0018] Secondly, embodiments of this application provide an electronic device, including any of the power semiconductor modules described above.

[0019] The power semiconductor module and electronic device provided in this application include: a support frame, including a base island and pins for external electrical connection; the base island includes a first surface for placing a chip and a second surface opposite to it; a chip, disposed on the first surface and electrically connected to the pins; a heat dissipation reinforcement, located outside the second surface of the support frame and spaced apart from the second surface by a first preset gap; the heat dissipation reinforcement is made of a material with a thermal conductivity greater than the first preset thermal conductivity coefficient; the heat dissipation reinforcement includes a first side facing the support frame and a second side opposite to it; a molding compound, covering the support frame and the heat dissipation reinforcement and molding them together, the first preset gap being filled with the molding compound; the pins are at least partially exposed outside the molding compound; the outer surface of the second side of the heat dissipation reinforcement is at least partially exposed outside the molding compound. It can be seen that the power semiconductor module and electronic device of this application, provided with a heat dissipation reinforcement, improve the heat dissipation capacity of the power semiconductor module, and has a simple structure. Furthermore, the heat dissipation reinforcement is spaced apart from the second surface of the support frame by a first preset gap, enhancing electrical insulation. Therefore, the power semiconductor module and electronic device of this application can improve the heat dissipation capacity of the power semiconductor module, and has a simple structure and good insulation performance.

[0020] Additional aspects and advantages of this application will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of this application. Attached Figure Description

[0021] The accompanying drawings, which are included to provide a further understanding of this application and form part of this application, illustrate exemplary embodiments and are used to explain this application, but do not constitute an undue limitation of this application. In the drawings:

[0022] Figure 1 A schematic diagram of a power semiconductor module provided in an embodiment of this application;

[0023] Figure 2 for Figure 1 A schematic diagram of the upward projection (chip mounting surface);

[0024] Figure 3 for Figure 1 A top-view projection diagram (excluding the chip mounting surface).

[0025] Figure 4 A cross-sectional schematic diagram of a power semiconductor module provided in an embodiment of this application;

[0026] Figure 5 for Figure 4 A magnified view of a portion of point A in the middle.

[0027] Explanation of reference numerals in the attached figures:

[0028] 10. Support frame; 11. Base island; 111. First surface; 112. Second surface; 12. Pin; 13. Ejector pin hole; 20. Chip; 30. Heat dissipation reinforcement; 31. Stepped structure; 40. First preset gap; 50. Molded enclosure. Detailed Implementation

[0029] To make the technical solutions and beneficial effects of this application more obvious and understandable, the technical solutions in the embodiments of this application are clearly and completely described below by listing specific embodiments. Obviously, the embodiments of this application are not exhaustive, and the described embodiments are only some embodiments of this application, not all embodiments.

[0030] The exemplary embodiments disclosed in this application will now be described in more detail with reference to the accompanying drawings, providing detailed structures and steps to illustrate the technical solution of this application. Note that the drawings are not necessarily drawn to scale, and local features may be enlarged or reduced to more clearly show the details of the local features.

[0031] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application pertains. The terminology used herein is for the purpose of describing particular embodiments only and should not be construed as limiting the technical solutions of this application.

[0032] The following description provides numerous specific details to offer a more thorough understanding of this application. However, it will be apparent to those skilled in the art that this application can be practiced without one or more of these details. To clearly define the inventive concept of this application and avoid confusion with its content, technical features well-known in the art and conventionally understood by those skilled in the art are not elaborated upon. Specifically, this document does not fully list all features of actual embodiments, nor does it provide a detailed description of well-known functions and structures.

[0033] The applicant of this application discovered during research and development that, in order to improve heat dissipation and reduce losses, there are two common improvement schemes in related technologies: one is to weld the module frame to the copper-clad ceramic substrate; the other is to use insulating adhesive to attach thermally conductive copper sheets to the non-chip mounting surface of the frame. However, these two methods have the following drawbacks:

[0034] 1) The first method has the disadvantages of complex procedures and high costs;

[0035] 2) The second method exists, but the insulation effect is uncontrollable, and insulation failure is likely to occur under high voltage.

[0036] Therefore, based on further research and development by the applicant, the following technical solution was proposed.

[0037] To address the technical problems in related technologies, embodiments of this application provide a power semiconductor module. (See reference...) Figures 1-5 The power semiconductor module includes:

[0038] The support frame 10 includes a base island 11 and pins 12 for external electrical connection; the base island 11 includes a first surface 111 for placing the chip 20 and a second surface 112 opposite to it.

[0039] Chip 20 is disposed on the first surface 111 and is electrically connected to the pin 12;

[0040] The heat dissipation reinforcement 30 is located outside the second surface 112 of the support frame 10 and is spaced apart from the second surface 112 by a first preset gap 40; the heat dissipation reinforcement 30 is made of a material with a thermal conductivity greater than the first preset thermal conductivity coefficient; the heat dissipation reinforcement 30 includes a first side facing the support frame 10 and a second side opposite to it.

[0041] A molding compound 50 covers the support frame 10 and the heat dissipation reinforcement 30 and fixes them together. The molding compound 50 is filled in the first preset gap 40. The pins 12 are at least partially exposed outside the molding compound 50. The outer surface of the second side of the heat dissipation reinforcement 30 is at least partially exposed outside the molding compound 50.

[0042] It should be noted that, for ease of description, the base island 11 and pin 12 are collectively referred to as the support frame 10. Understandably, different names may be used in other technical documents.

[0043] The base island 11 is the part on the frame used to mount the chip 20. It is the basic platform for mounting and fixing the chip 20, providing physical support for the chip 20 and ensuring the stability of the chip 20 during subsequent packaging and use.

[0044] Specifically, the first surface 111 can also be called the chip mounting surface, and the second surface 112 can also be called the non-chip mounting surface.

[0045] Understandably, chip 20 can be one or more. Furthermore, chip 20 here can be interpreted broadly as any electronic component that generates heat during operation.

[0046] Understandably, compared to ordinary plastics or resins, the encapsulated body 50 of this embodiment also has a stronger heat dissipation capacity for better heat dissipation.

[0047] Understandably, the heat dissipation reinforcement 30 can be made of metal, with a heat dissipation capacity greater than that of the encapsulation 50, i.e., a first preset thermal conductivity greater than that of the encapsulation 50. Understandably, since the heat dissipation reinforcement 30 requires better thermal conductivity, it is necessary to use a metal material, which in turn necessitates the provision of the encapsulation 50 to enhance insulation.

[0048] The outer surface of the second side of the heat dissipation reinforcement 30 is at least partially exposed to the encapsulation body 50, in order to take advantage of the strong thermal conductivity of the heat dissipation reinforcement 30.

[0049] The power semiconductor module of this application embodiment can improve the heat dissipation capability of the power semiconductor module, and has a simple structure and good insulation performance.

[0050] In some embodiments of this application, the first preset gap 40 is greater than or equal to 0.5 mm.

[0051] This provides sufficient insulation distance. It's understandable that in some cases, other sizes of gaps could also be used.

[0052] exist Figure 4 In the middle, the width of the first preset gap 40 is marked as W1.

[0053] In some embodiments of this application, the first preset thermal conductivity is greater than or equal to 150 W / (m·K).

[0054] Understandably, with a thermal conductivity of 150 W / (m·K), similar to that of aluminum, this configuration can further enhance the heat dissipation capacity of the heat dissipation reinforcement 30.

[0055] In some embodiments of this application, the heat dissipation reinforcement 30 is made of copper or a copper alloy.

[0056] Understandably, copper or copper alloys have a thermal conductivity of over 200 W / (m·K), which can further improve the heat dissipation capacity of the heat dissipation reinforcement 30.

[0057] In some embodiments of this application, the outer surface of the second side of the heat dissipation reinforcement 30 is rectangular in shape, and its area is greater than or equal to 90% of the surface area of ​​the first surface.

[0058] Understandably, a rectangular shape is easier to manufacture and has lower costs. Since heat dissipation capacity is largely related to the first surface of the base island, a larger first surface allows for more chips to be mounted. Therefore, the area of ​​the outer surface of the second side of the heat dissipation reinforcement 30 is set in relation to the surface area of ​​the first surface.

[0059] Thermal simulation tests show that, under the same conditions, the chip temperature of the power semiconductor module in this embodiment is significantly lower than that of the power semiconductor module in the prior art. Specific test data are shown in Table 1.

[0060] Table 1

[0061]

[0062] As shown in Table 1, in the heat dissipation simulation test, the chip 20 of the power semiconductor module in the prior art has more high-temperature areas and a higher maximum temperature. The average and maximum temperatures of the chip 20 in the power semiconductor module of the prior art are significantly higher than those of the power semiconductor module in the embodiment of this application. For example, the lowest temperature in the prior art is 136.03°C, the highest temperature is 154.30°C, and the average temperature is approximately 144.96°C. In the embodiment of this application, the lowest temperature is 117.19°C, the highest temperature is 124.47°C, and the average temperature is approximately 120.87°C.

[0063] In some embodiments of this application, at least one end of the heat dissipation reinforcement 30 in the circumferential direction is provided with a stepped structure 31 in the thickness direction of the encapsulation body 50, and at least one layer of the stepped structure 31 is wrapped by the encapsulation body 50.

[0064] Thus, due to the stepped structure 31, i.e. the steps, the encapsulated body 50 can penetrate deeper into the heat dissipation reinforcement 30, making the position between the heat dissipation reinforcement 30 and the encapsulated body 50 more stable and secure.

[0065] In some embodiments of this application, the surface roughness of the heat dissipation reinforcement 30 in contact with the molding compound 50 is between Ra0.1μm and Ra2.0μm.

[0066] Due to the rough surface, the resistance between the contact surfaces of the encapsulation 50 and the heat dissipation reinforcement 30 is greatly increased, further improving the positional stability between the heat dissipation reinforcement 30 and the encapsulation 50.

[0067] In some embodiments of this application, the outer surface of the second side of the heat dissipation reinforcement 30 has a stamped recess (not shown in the figure) so that the inward surface of the heat dissipation reinforcement 30 can more firmly abut against the encapsulated body 50.

[0068] Understandably, this also makes the relative positional relationship between the molding compound 50 and the heat dissipation reinforcement 30 more stable.

[0069] In some embodiments of this application, the surface of the power semiconductor module with heat dissipation reinforcement 30 is provided with a pin hole 13 so that a pin can pass through the pin hole 13 to abut against the base island 11 of the support frame 10 during the molding process.

[0070] In this way, by setting the ejector pin hole 13, the ejector pin can abut against the base island 11 during the molding process, making the position of the heat dissipation reinforcement 30 and the molding body 50 more stable in the molding process, and improving the positional stability of the heat dissipation reinforcement 30 after molding.

[0071] Understandably, the ejector pin hole 13 penetrates the heat dissipation reinforcement 30, so that the ejector pin can pass through the heat dissipation reinforcement 30 and the first preset gap 40 to directly abut against the base island 11.

[0072] This application also provides an electronic device, which includes the power semiconductor module described above.

[0073] Electronic devices include housings, circuit boards, etc., and power semiconductor modules can be mounted on the circuit boards. Because power semiconductor modules have strong heat dissipation capabilities and good insulation properties, they can reduce the thermal load on electronic devices, thereby improving the overall insulation and safety of the electronic devices.

[0074] The electronic device of this application embodiment can improve the heat dissipation capability of the power semiconductor module, and has a simple structure and good insulation performance.

[0075] It should be noted that the various embodiments or implementation methods in this document can be described in a progressive manner, with each embodiment focusing on the differences from other embodiments. Similar or identical parts between embodiments can be referred to mutually. It should be understood that in the various embodiments of this application, the embodiment numbers are merely for descriptive purposes and do not represent the superiority or inferiority of the embodiments.

[0076] Understandably, without conflict, the technical features in the technical solutions described in each embodiment can be arbitrarily combined to form new embodiments. For example, each structure in each embodiment can be implemented as an independent embodiment, and the structures can be arbitrarily combined; some or all of the structures in different embodiments can be arbitrarily combined. Each step in each embodiment can be implemented as an independent embodiment, and the steps can be arbitrarily combined; the order of the steps can be arbitrarily interchanged; some or all of the steps in different embodiments can be arbitrarily combined. Furthermore, regarding the table in the embodiments, each element, each row, or each column in the table can be implemented as an independent embodiment.

[0077] In this document, when the terms "embodiment," "implementation," or "example" are used, it means that the specific features described in connection with these implementations or examples are included in at least one implementation, embodiment, or example of this application. It should be noted that the illustrative expressions of the above terms do not necessarily refer to the same implementation, embodiment, or example. Furthermore, the specific features described, such as structures or steps, can be appropriately combined in any one or more implementations, embodiments, or examples.

[0078] In some embodiments, prefixes such as "first" and "second" are used merely to distinguish different descriptive objects and do not impose restrictions on the position, order, priority, or value of the descriptive objects. The description of the descriptive objects is based on the context of the claims or embodiments, and the use of prefixes does not constitute unnecessary limitations. For example, the numerical value of the descriptive object is not limited by ordinal numbers and can be one or more. For instance, in "first device," the numerical value of "device" can be one or more. Furthermore, objects modified by different prefixes can be the same or different. For example, if the descriptive object is "device," then "first device" and "second device" can be the same device or different devices, and their types can be the same or different. Describing "first" does not necessarily imply the existence of "second," and discussing "second" does not necessarily imply the existence of "first."

[0079] In some embodiments, unless otherwise stated, elements expressed in the singular form, such as “a,” “the,” “the,” “the,” “the,” “the,” etc., can mean “one and only one,” or “one or more,” “at least one,” etc. For example, when using articles such as “a,” “an,” “the,” etc. in translation, the noun following the article can be understood as either a singular or a plural expression. In some embodiments, “multiple” refers to two or more.

[0080] In some embodiments, the terms “at least one of”, “one or more”, “a plurality of”, “multiple”, etc., may be used interchangeably.

[0081] In some embodiments, the notation "at least one of A and B", "A and / or B", "A in one case, B in another", "A in one case, B in another", etc., may include the following technical solutions depending on the situation: in some embodiments, A (A is executed regardless of B); in some embodiments, B (B is executed regardless of A); in some embodiments, execution is selected from A and B (A and B are selectively executed); in some embodiments, both A and B are executed. The same applies when there are more branches such as A, B, C, etc.

[0082] In some embodiments, the notation "A or B" may include the following technical solutions, depending on the situation: in some embodiments, A (execution of A regardless of B); in some embodiments, B (execution of B regardless of A); in some embodiments, selective execution from A and B (A and B are selectively executed). The same applies when there are more branches such as A, B, and C.

[0083] In some embodiments, unless otherwise expressly defined, the terms "installation," "connection," "linking," "fixing," "setting," etc., should be interpreted broadly. For example, "connection" can be a fixed connection, a detachable connection, or an integral part; it can be a mechanical connection, an electrical connection, or a communication connection; it can be a direct connection or an indirect connection through an intermediate medium; it can also refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this embodiment according to the specific circumstances.

[0084] In some embodiments, the terms “center,” “longitudinal,” “lateral,” “length,” “width,” “thickness,” “height,” “up,” “down,” “front,” “rear,” “left,” “right,” “vertical,” “horizontal,” “top,” “bottom,” “inner,” “outer,” “clockwise,” and “counterclockwise” indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only used for the purpose of simplifying the description of this application and do not indicate that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. That is, they should not be construed as limitations on this application.

[0085] In some embodiments, unless otherwise expressly defined, "above" or "below" the second feature can mean that the first and second features are in direct contact, or indirect contact via an intermediate medium, or that they are not in contact, but simply indicate that the horizontal level of the first feature is higher than that of the second feature. Furthermore, "above" or "below" the second feature can mean that the first feature is directly above or diagonally above, directly below, or diagonally below the second feature.

[0086] In some embodiments, spatial relation terms such as “upper” and “lower” may be used for convenience of description to describe the relationship of one element or feature shown in the figures to other elements or features. It should be understood that, in addition to the orientation shown in the figures, spatial relation terms are intended to also include different orientations of the device in use and operation. For example, if the device in the figures is flipped, the description of an element or feature “below” other elements or features will change it to “upper” other elements or features. Therefore, the exemplary terms “upper” and “lower” can include both upper and lower orientations. The device may also be otherwise oriented (rotated 90 degrees or otherwise), and the spatial descriptive terms used herein will be interpreted accordingly.

[0087] It should be understood that the above embodiments are exemplary and are not intended to encompass all possible implementations of the technical solutions of this application. Various modifications and changes can be made to the above embodiments without departing from the scope of this application. Similarly, the various technical features of the above embodiments can be arbitrarily combined to form other embodiments of this application that may not be explicitly described. Therefore, the above embodiments only illustrate several implementations of this application and do not limit the scope of protection of this patent application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.

Claims

1. A power semiconductor module, characterized by, include: The support frame includes a base island and pins for external electrical connection; the base island includes a first surface for placing the chip and a second surface opposite to it. A chip is disposed on the first surface and electrically connected to the pins; A heat dissipation reinforcement is located outside the second surface of the support frame and spaced apart from the second surface by a first preset gap; the heat dissipation reinforcement is made of a material with a thermal conductivity greater than the first preset thermal conductivity coefficient; the heat dissipation reinforcement includes a first side facing the support frame and a second side opposite to it; A molding compound covers the support frame and the heat dissipation reinforcement and fixes them together, with the molding compound filling the first preset gap; the pins are at least partially exposed outside the molding compound; and the outer surface of the second side of the heat dissipation reinforcement is at least partially exposed outside the molding compound.

2. The power semiconductor module according to claim 1, characterized in that The first preset gap is greater than or equal to 0.5 mm.

3. The power semiconductor module according to claim 1, characterized in that The first preset thermal conductivity is greater than or equal to 150 W / (m·K).

4. The power semiconductor module according to claim 1, characterized in that The heat dissipation reinforcement is made of copper or copper alloy.

5. The power semiconductor module according to claim 1, characterized in that, The outer surface of the second side of the heat dissipation reinforcement is rectangular in shape, and its area is greater than or equal to 90% of the surface area of ​​the first surface.

6. The power semiconductor module according to claim 4, characterized in that At least one end of the heat dissipation reinforcement has a stepped structure in the thickness direction of the encapsulation, and at least one layer of the stepped structure is encapsulated by the encapsulation.

7. The power semiconductor module according to claim 4, characterized in that The surface roughness of the heat dissipation reinforcement in contact with the molding compound is between Ra0.1μm and Ra2.0μm.

8. The power semiconductor module according to claim 1, characterized in that The outer surface of the second side of the heat dissipation reinforcement has a stamped recess, so that the inward-facing surface of the heat dissipation reinforcement can more firmly abut against the encapsulated body.

9. The power semiconductor module according to any one of claims 1 to 8, characterized in that The power semiconductor module has a pin hole on one side of the heat dissipation reinforcement component, so that a pin can pass through the pin hole to abut against the base island of the support frame during the molding process.

10. An electronic device, comprising: Includes the power semiconductor module according to any one of claims 1-9.

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