Laser diode device

The innovative housing design for laser diode devices, using metallic or ceramic materials and a transparent cover with thermal management, addresses thermal coupling issues, achieving high optical output power and efficient heat dissipation for multiple chips.

DE102012103257B4Active Publication Date: 2026-01-29OSRAM OPTO SEMICON GMBH & CO OHG
View PDF 19 Cites 0 Cited by

Patent Information

Application Number
DE102012103257
Authority / Receiving Office
DE · DE
Patent Type
Patents
Current Assignee / Owner
Filing Date
2012-04-16
Publication Date
2026-01-29
Estimated Expiration
2032-04-16

AI Technical Summary

Technical Problem

Conventional laser diode devices suffer from poor thermal coupling between the laser diode chip and the package, leading to reduced optical output power, especially when multiple high-power chips are used, and existing housings unsuitable for high optical output power due to material incompatibility and inability to create a tight seal.

Method used

A housing design featuring a metallic or ceramic structure without plastic, with a transparent cover element, deflecting element, and thermal interface material to manage heat and radiation, allowing for efficient heat dissipation and sealing, and optionally incorporating luminescence or scattering elements for enhanced radiation distribution.

Benefits of technology

The design achieves high optical output power with efficient heat dissipation and sealing, enabling multiple laser diode chips to operate without significant efficiency loss, and allows for scalable optical output power by increasing chip count.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure 00000000_0000_ABST
    Figure 00000000_0000_ABST
Patent Text Reader

Abstract

Laser diode device with - comprising a housing (10) having a mounting surface (11) in a cavity (19) of the housing (10), - at least two laser diode chips (1) which, during operation, each emit electromagnetic radiation through a radiation emission surface (1a), - at least a cover element (20) which is at least partially transparent to the electromagnetic radiation generated by the laser diode chips (1) during operation, - a deflecting element (2) which directs at least part of the electromagnetic radiation generated by the laser diode chips (1) during operation towards the cover element (20), wherein - the radiation emission surfaces (1a) of the laser diode chips (1) run transversely or perpendicularly to the mounting surface (11) and / or to the cover element (20), - the cover element (20) is connected to the housing (10), and - the cover element (20) tightly seals the housing (10), - the housing (10) is entirely free of any plastic material and is formed with a metal, - the housing (10) is formed in one piece, - the cover element (20) has a frame (21) that surrounds a window element (22) in a frame-like manner, wherein the window element (22) is transparent to at least some of the electromagnetic radiation generated by the laser diode chips (1) during operation, - the edging (21) is connected to the housing (10) by welding, and - each laser diode chip (1) is uniquely assigned a heat conducting element (3) which is arranged between the mounting surface (11) and the respective laser diode chip (1).
Need to check novelty before this filing date? Find Prior Art

Description

[0001] A laser diode device is specified.

[0002] The publications WO 2004 / 107 511 A2 and WO 2010 / 069 282 A2 describe laser diode devices.

[0003] The publications DE 10 2008 063 634 A1, US 2005 / 0 214 979 A1, DE 10 2010 012 604 A1, US 2011 / 0 280 266 A1, US 2010 / 0 246 159 A1, DE 10 2005 036 266 A1, DE 10 2007 062 047 A1, DE 694 09 586 T2, JP 2004 - 179 559 A, JP 2011 - 44 454 A, and JP 2000 - 349 389 A describe laser diode devices.

[0004] The publication HC Bhedwar, HT Sawhill, “Cermaic multilayer package fabrication”, in Electronic materials handbook: volume 1: packaging; ASM International, 1989, pp. 260-469; ISBN 0871702851, describes ceramic multilayer packages.

[0005] One problem to be solved is to specify a laser diode device that is characterized by a particularly high optical output power.

[0006] According to at least one embodiment of the laser diode device, the laser diode device comprises a housing. The components of the laser diode device can be arranged in the housing.

[0007] The housing has a cavity. The cavity can be designed, for example, as a recess or a cutout in a base body of the housing. The housing cavity is bounded at its bottom by a mounting surface of the housing. This mounting surface is intended for attaching components of the laser diode device to it. In addition to the bottom surface, the cavity can also be bounded by side surfaces that run perpendicular or at an angle to the mounting surface of the cavity. The housing cavity is designed to accommodate the components of the laser diode device.

[0008] According to at least one embodiment of the laser diode device, the laser diode device comprises a laser diode chip that emits electromagnetic radiation through a radiation emission surface during operation. The laser diode chip is specifically configured to emit electromagnetic radiation in the spectral range between UV and infrared radiation during operation. For example, the laser diode chip can be configured to emit UV radiation, blue light, green light, red light, or infrared radiation during operation. In particular, the laser diode chip is a laser diode chip based on a nitride compound semiconductor material.

[0009] In the present context, "based on nitride compound semiconductor material" means that a semiconductor layer sequence of the laser diode chip, or at least a part thereof, particularly preferably at least an active zone and / or a growth substrate wafer, is a nitride compound semiconductor material, preferably Al n Ga m In 1-n-m N is present or consists of, where 0 ≤ n ≤ 1, 0 ≤ m ≤ 1, and n+m ≤ 1. This material does not necessarily have to have a mathematically exact composition according to the formula above. Rather, it may, for example, contain one or more dopants as well as additional components. For the sake of simplicity, however, the formula above only includes the essential components of the crystal lattice (Al, Ga, In, N), even though these may be partially replaced and / or supplemented by small amounts of other substances.

[0010] The laser diode chip can, in particular, comprise an epitaxially grown sequence of semiconductor layers, including an active layer formed, for example, from AlGaInN and / or InGaN. The active layer is then configured to emit electromagnetic radiation from the spectral range of ultraviolet radiation to green light during operation. The laser diode chip can, for example, have a conventional pn junction, a double heterostructure, or a quantum well structure as its active layer, preferably a multiple quantum well structure. The term "quantum well structure" here has no bearing on the dimensionality of the quantization. It thus includes, among other things, quantum wells, quantum wires, and quantum dots, and any combination of these structures.

[0011] The laser diode chip is characterized in particular by a high optical output power. For example, the optical output power of the laser diode chip is at least 1 W, and in particular at least 3 W.

[0012] The laser diode chip includes a radiation emission surface. The radiation emission surface is the area of ​​the laser diode chip through which at least a large portion of the radiation emitted during operation exits the laser diode chip. The radiation emission surface is formed, for example, by part of a side face of the semiconductor layer sequence. In this case, the laser diode chip is specifically an edge-emitting laser diode chip.

[0013] According to at least one embodiment of the laser diode device, the laser diode device comprises a cover element that is at least partially transparent to the electromagnetic radiation generated by the laser diode chip during operation. That is, the radiation generated by the laser diode chip during operation exits the laser diode device through the cover element, preferably exclusively through the cover element. The cover element can have areas that are transparent to the electromagnetic radiation generated by the laser diode chip during operation and areas that are opaque to this radiation.

[0014] According to at least one embodiment of the laser diode device, the device comprises a deflecting element that directs at least a portion of the electromagnetic radiation generated by the laser diode chip during operation toward the cover element. The electromagnetic radiation emerges, for example, from the radiation emission surface of the laser diode chip and subsequently strikes the deflecting element. From the deflecting element, the radiation is guided to the cover element by optical refraction and / or reflection. That is, the deflecting element changes the main emission direction of the electromagnetic radiation generated by the laser diode chip during operation, for example, by an angle between 80° and 100°.

[0015] According to at least one embodiment of the laser diode device, the radiation emission surface of the laser diode chip is transverse or perpendicular to the mounting surface and / or the cover element. In other words, the laser diode chip emits its radiation in such a way that it is partially parallel to the mounting surface and / or the main plane of extension of the cover element. Furthermore, a portion of the radiation generated by the laser diode chip during operation is directed in such a way that it intersects the plane of the mounting surface. In particular, the radiation emission surface of the laser diode chip is not arranged parallel to the mounting surface. The electromagnetic radiation generated by the laser diode chip during operation is not directed away from the mounting surface, for example, in the direction of the cover element, immediately at the radiation emission surface.Rather, at least a large part of the radiation is deflected towards the cover element by the deflecting element of the laser diode device, which is arranged at a distance from the radiation exit surface.

[0016] According to at least one embodiment of the laser diode device, the cover element is connected to the housing. For example, the cover element is located at a distance from the mounting surface. The cover element, that is, its main plane of extension, can then run parallel to the mounting surface of the housing, at least in some places. The cover element closes off the housing, for example, at its top.

[0017] According to at least one embodiment of the laser diode device, the cover element tightly seals the housing. In particular, the cover element seals the housing tightly against atmospheric gases and / or moisture. Depending on the manufacturing capabilities, the cover element seals the housing hermetically. This means, for example, that the cover element completely covers the cavity of the housing and seals the cavity, and thus the components of the laser diode device within the cavity, such as the laser diode chip and the deflection element, tightly against the environment. The cavity can also be filled with a protective gas, for example, an inert gas, which is prevented from escaping the cavity by the tightly sealing cover element. Alternatively, the cavity can be evacuated.

[0018] In particular, the housing is preferably sealed so tightly that the leakage rate for incoming or outgoing gas is at most 5*10^(-8) Pa m^(3) / s.

[0019] According to at least one embodiment of the laser diode device, the laser diode device comprises a housing with a mounting surface in a cavity of the housing. The laser diode device further comprises at least one laser diode chip which emits electromagnetic radiation through a radiation emission surface during operation. The laser diode device also comprises at least one cover element which is at least partially transparent to the electromagnetic radiation generated by the laser diode chip during operation. The laser diode device further comprises a deflecting element which directs at least a portion of the electromagnetic radiation generated by the laser diode chip during operation towards the cover element, wherein the radiation emission surface of the laser diode chip is transverse or perpendicular to the mounting surface and / or the cover element, the cover element is connected to the housing, and the cover element tightly seals the housing.

[0020] According to at least one embodiment of the laser diode device, the device comprises at least two, preferably a plurality, laser diode chips. The laser diode chips can be of identical design. That is, the laser diode device then comprises, for example, exclusively identical laser diode chips. By mounting the laser diode chips on the mounting surface of the housing, they can be thermally bonded to the housing very effectively. This enables efficient dissipation of heat generated during operation.

[0021] Conventional laser diode devices, such as those housed in a TO package, suffer from relatively poor thermal coupling between the laser diode chip and the package, and consequently, the surrounding environment. For example, mounting two high-power laser diode chips (at least 1 W) in such a TO package results in a lower optical output than a single chip. This is because the two chips heat each other up so much that the electro-optical efficiency decreases disproportionately.

[0022] One solution to this problem could be the use of housings similar to those used for high-power LEDs. However, these housings require the laser diode chip to be overmolded with plastic. Therefore, these housings are unsuitable for high optical output power laser diode chips, as these plastics cannot withstand the optical power densities and / or the short wavelengths of the radiation generated by the laser diode chip during operation. Furthermore, it is not possible to create a tight seal around the laser diode chips within the housings using such plastics.

[0023] According to at least one embodiment of the laser diode device, the at least one laser diode chip is unencapsulated. This means that the cavity of the housing is not filled with a potting material, for example, a silicone-based plastic, but rather, in particular, the radiation emission surface of the laser diode chip borders the gas filling the cavity of the housing, for example, a protective gas or air. Furthermore, it is possible that the housing is entirely free of plastic material and is formed, for example, with metallic and / or ceramic materials.

[0024] According to at least one embodiment of the laser diode device, the cover element has a frame that surrounds a window element. The frame is made of a different material than the window element. For example, the frame is made of a material that is opaque to the electromagnetic radiation generated by the at least one laser diode chip during operation. The window element, on the other hand, is made of a material that is transparent to at least some of the electromagnetic radiation generated by the laser diode chip during operation. The frame can, for example, be made of a metal such as stainless steel. The window element is made of a radiation-transparent material. For example, the material of the window element comprises or consists of one of the following materials: glass, sapphire, ceramic.The window element can be transparent, clear, or translucent milky.

[0025] Furthermore, it is possible that at least one additional material, such as a luminescence conversion material or a radiation-scattering material, is incorporated into the base material of the window element. In this case, the window element can exhibit radiation-scattering or radiation-converting properties.

[0026] According to at least one embodiment of the laser diode device, the bezel is connected to the housing by soldering or welding. For example, the housing, at least in the area where it borders the cover element, can be made of metal. In this case, the bezel and housing can be joined by welding. This allows for a particularly temperature-stable and tight connection between the two elements. Alternatively, the cover element and the housing can be joined by soldering, using either a metallic or glass solder as the joining medium.

[0027] According to at least one embodiment of the laser diode device, at least one of the following optical elements is attached to the cover element: Luminescence conversion element, lens, scattering element. It is particularly possible for several of these elements to be attached to the cover element. The elements can be attached to the side of the cover element facing the at least one laser diode chip, as well as to the side of the cover element facing away from the at least one laser diode chip. The elements can be attached directly or indirectly to the cover element. For example, a luminescence conversion element, on which a lens is in turn arranged, can be located on the side of the cover element facing away from the laser diode chip. The lens is then indirectly attached to the cover element, whereas the luminescence conversion element is attached directly to the cover element.

[0028] If the cover element includes a luminescence conversion material and / or a luminescence conversion element is attached to the cover element, the laser diode device can be configured to generate white light during operation. For example, in this case, the at least one laser diode chip generates blue light or UV radiation. The luminescence conversion material and / or the luminescence conversion element converts at least some of this light into electromagnetic radiation of longer wavelengths.

[0029] According to at least one embodiment of the laser diode device, the deflecting element is formed by or comprises at least one of the following optical elements: mirror, prism. That is, the deflection of the electromagnetic radiation generated by the at least one laser diode chip during operation towards the cover element can be achieved by reflection and / or optical refraction.

[0030] According to at least one embodiment of the laser diode device, the device comprises at least one thermal interface element arranged between the mounting surface of the housing and the at least one laser diode chip. The thermal interface element can, in particular, serve to widen or spread the heat flow generated during operation of the laser diode chip between the laser diode chip and the mounting surface, in order to achieve a large contact area for heat transfer from the laser diode chip to the housing. The housing can then be mounted directly onto a heat sink with its side facing away from the mounting surface. This allows for a particularly short path between the laser diode chip and the heat sink, enabling effective heat dissipation from the laser diode chip. The use of the thermal interface element ensures that the heat generated by the laser diode chip can be distributed over a particularly large area.This also makes it possible to use multiple laser diode chips in the same package without significantly degrading the thermal connection between the individual laser diode chips. In particular, this reduces the mutual heating of the laser diode chips.

[0031] The thermal interface material can also be used to reduce or compensate for thermal stresses between the laser diode chip and the housing, which can be caused, for example, by differing coefficients of thermal expansion. The thermal interface material can be attached to the laser diode chip and the mounting surface, for example, by soldering.

[0032] The heat conducting element can in particular be formed by or consist of at least one of the following materials: silicon carbide, boron nitride, copper tungsten, diamond, aluminum nitride.

[0033] Furthermore, it is possible that the thermal conductivity element is formed with an electrically conductive material and that the laser diode chip is electrically connected via the thermal conductivity element.

[0034] According to at least one embodiment of the laser diode device, the laser diode device comprises at least two laser diode chips, each of which is uniquely assigned a thermal interface material. That is, in this case, not all laser diode chips are arranged on a common thermal interface material, but rather each laser diode chip is arranged on its own thermal interface material. In this case, the laser diode chips can be attached to their assigned thermal interface material before being mounted in the cavity of the housing and then attached to the mounting surface as a composite of laser diode chip and thermal interface material.

[0035] According to at least one embodiment of the laser diode device, the housing is formed from a metallic material. For example, the housing comprises a housing base body made of a metallic material. The housing may, for instance, comprise a housing base body made of a FeNiCo alloy and / or a WCu alloy. The housing base body may be covered, or partially covered, with a metallic layer, for example, of Ni / Au or Au. The housing may be a housing similar to a so-called butterfly housing. However, unlike conventional butterfly housings, the present housing has a cover element that closes off the housing cavity at one of its upper surfaces and is formed from a material that is at least partially radiolucent.

[0036] According to at least one embodiment of the laser diode device, the housing has at least one side wall. The side wall or side walls define the housing in a lateral direction, for example, parallel to the mounting surface. The side wall of the housing is inclined or perpendicular to the mounting surface. For example, the side wall of the housing connects the mounting surface to the cover element. In particular, the cover element can be attached to the side of the side wall facing away from the mounting surface.

[0037] According to at least one embodiment of the laser diode device, the side wall has at least one opening through which an electrical connection element is guided, to which the laser diode chip is electrically connected. If the housing, and thus also the side wall, is made of a metallic material, the electrical connection element, which passes through the opening into the cavity of the housing, is electrically insulated within the opening of the side wall.

[0038] The electrical connection element is, for example, a pin or pin made of an electrically conductive material, such as a metal, which protrudes from outside the housing through the opening into the cavity of the housing. There, in the housing cavity, the connection element can then be electrically connected to a laser diode chip, for example, by means of a connecting wire.

[0039] It is particularly possible that the number of connection elements is at least equal to the number of laser diode chips. For example, each laser diode chip is electrically connected to exactly one connection element. The laser diode device can then comprise, for example, ten, twelve, fourteen, or more connection elements and the same number of laser diode chips. However, it is also conceivable that the laser diode chips are connected in series within the housing, and then only two connection elements are needed for several laser diode chips, so that the number of connection elements is less than the number of laser diode chips.

[0040] According to at least one embodiment of the laser diode device, a beam-shaping optical element is arranged between the radiation output surface of the at least one laser diode chip and the deflecting element. The beam-shaping optical element can be, for example, a lens, such as a cylindrical lens. Furthermore, several beam-shaping optical elements can be arranged between the radiation output surface and the deflecting element, through which the electromagnetic radiation emitted by the laser diode chip during operation passes sequentially. The deflecting element(s) can be used, for example, for slow-axis and / or fast-axis collimation of the laser radiation. In this way, several laser diode chips can be arranged relatively close to one another in the housing of the laser diode device without the beam lobes of the individual laser diode chips overlapping within the housing.

[0041] If a diffusing element or a luminescence conversion element is used on the cover element, particularly uniform illumination of this element is desirable. In this case, it proves advantageous if the beam lobes overlap at least at their half-power width at the element. If the beam lobes are to be guided individually outside the housing, the beam lobes should overlap by no more than 10% at the point of exiting the housing.

[0042] All components of the laser diode device, if present—that is, the at least one laser diode chip, the at least one deflecting element, and the at least one beam-shaping optical element—can be attached to the mounting surface of the housing. The deflecting element and the beam-shaping optical element can, for example, be attached to the mounting surface by adhesive.

[0043] According to at least one embodiment of the laser diode device, the laser diode device comprises at least two laser diode chips, wherein the radiation emission surfaces of two of the laser diode chips face each other and at least one deflecting element is arranged between the two laser diode chips. The deflecting element is thus arranged between two facing laser diode chips. The deflecting element is designed such that laser radiation from one of the laser diode chips cannot reach the other.

[0044] The optically active surfaces of the deflection element are arranged, for example, symmetrically about a central axis, relative to which the laser diode chips are also arranged symmetrically on both sides of the deflection element. For example, the laser diode device comprises a single deflection element extending along this central axis. The laser diode chips can then be arranged symmetrically or offset from each other to the left and right of the deflection element.

[0045] The laser diode device includes: - a housing comprising a mounting surface in a cavity of the housing, - at least two laser diode chips that emit electromagnetic radiation through a radiation emission surface during operation, - at least a covering element that is at least partially transparent to the electromagnetic radiation generated by the laser diode chips during operation, - a deflecting element that directs at least part of the electromagnetic radiation generated by the laser diode chips during operation towards the cover element, wherein - the radiation emission surfaces of the laser diode chips run transversely or perpendicularly to the mounting surface and / or to the cover element, - the cover element is connected to the housing, and - the cover element tightly seals the housing, - the entire housing is free of any plastic material and is made of metal, - the housing is made in one piece, - the cover element has a frame that surrounds a window element, wherein the window element is transparent to at least some of the electromagnetic radiation generated by the laser diode chips during operation, - the edging is connected to the housing by welding, and - each laser diode chip is uniquely assigned a thermal conductivity element that is located between the mounting surface and the respective laser diode chip.

[0046] The laser diode device described here will be explained in more detail below using exemplary embodiments and the associated figures. The Fig. Figure 1A shows a schematic perspective view of a first embodiment of a laser diode device described herein. The Fig. Figure 1B shows a corresponding schematic sectional view. The Fig. 2, Fig. 3, Fig. 4, Fig. 5 and Fig. Figure 6 shows schematic sectional views of further embodiments of the laser diode devices described here.

[0047] Identical, similar, or similarly effective elements in the figures are marked with the same reference symbols. The figures and the relative sizes of the elements depicted within them are not to be considered to scale. Rather, individual elements may be exaggerated for clarity and / or to improve representation.

[0048] In the Fig. Figure 1A shows a first embodiment of a laser diode device described herein in a schematic perspective view. Fig. Figure 1B shows a corresponding sectional view along the section line A-A'.

[0049] The laser diode device comprises a housing 10. In this case, the housing 10 is made of a metal. The housing 10 has a cavity 19 in which the components of the laser diode device are arranged.

[0050] Fourteen nitride-based laser diode chips 1 are mounted in the cavity 19 of the housing 10 on the mounting surface 11 of the housing. A thermal conducting element 3 is arranged between the mounting surface 11 and each laser diode chip 1, with each laser diode chip 1 being uniquely assigned a thermal conducting element 3.

[0051] The laser diode chips 1 each have radiation emission surfaces 1a through which the electromagnetic radiation generated during operation exits the laser diode chips 1. The laser diode chips 1 are arranged in two rows on both sides of a single optical deflection element 2. The optical deflection element 2 is a deflection mirror having two mirrored surfaces, each facing the radiation emission surfaces 1a of the laser diode chips 1. The radiation generated by the laser diode chips 1 during operation is reflected by the optical deflection element 2 towards a cover element 20.

[0052] The laser diode chips 1 can be attached to the thermal interface material 3 by means of a solder material. The thermal interface material 3, in turn, is attached to the mounting surface 11 on its side facing away from the associated laser diode chip 1 by means of a solder material.

[0053] The housing 10 has side walls 12 which define the cavity 19 in which the components of the laser diode device are arranged in a lateral direction.

[0054] The housing 10 is formed in one piece and, in addition to the mounting surface 11 and the side walls 12, has a fastening device 16, which in this case is designed as a projection on two sides of the housing. The fastening device 16 can have openings 18 by means of which the housing 10 is arranged and fastened, for example by screws or rivets, to a heat sink (not shown) on the underside of the housing 10 facing away from the mounting surface 11.

[0055] In the present embodiment, the housing wall 12 has a plurality of openings 13. A connecting element 14 is guided through each opening 13 from outside the housing into the housing cavity. The connecting elements 14 are designed as metallic pins or studs that are electrically insulated and mounted in the housing wall. That is, the connecting elements are each electrically insulated from the housing 10.

[0056] Each connection element 14 is electrically connected to an associated laser diode chip 1 in the housing cavity 19 by means of a connecting wire 15. The laser diode chips 1 in the housing cavity 19 can be individually controlled via the connection elements 14.

[0057] The housing cavity 19 is covered by the cover element 20 at a distance from the mounting surface 11. The cover element 20 includes a frame 21 made of a metallic material. The frame 21 surrounds a window element 22. The frame 21 is opaque to the electromagnetic radiation generated by the laser diode chips 1 during operation; the radiation can only exit the housing 10 through the window element 22. In this case, the window element 22 is, for example, made of glass.

[0058] The frame 21 is connected to the side walls 12 of the housing in a connection area 23 at a contact surface 17, which limits the side walls 12 at the top of the housing. The connection can be made, for example, by a metallic solder, a glass solder, or a weld, with the connection area 23 then being designed accordingly.

[0059] An optional scattering element 32 is arranged on the side of the cover element 20 facing the light-emitting diode chips 1. This element is designed to diffusely scatter the electromagnetic radiation generated by the laser diode chips 1 during operation. This ensures that the electromagnetic radiation exiting the cover element 20 is homogeneously distributed across the surface of the window element 22 and exits the housing 10 uniformly.

[0060] The cover element 20 seals the housing tightly. In particular, the housing can be hermetically sealed, so that the laser diode chips 1 are protected against atmospheric gases and moisture.

[0061] The housing 10 can be a type of butterfly housing, whereby, unlike conventional housings of this type, the cover element 20 on the top of the housing is designed to be radiation-permeable.

[0062] In this arrangement, the heat generated during operation in the laser diode chip 1 is spread out via the thermal conducting element 3, allowing it to be transferred over a large area to the mounting surface 11 of the housing 10. From there, the heat is dissipated to the environment via a relatively short thermal conduction path. This makes it possible to arrange a large number of laser diode chips in a single housing without the efficiency of any individual laser diode chip being significantly reduced by the heat generated by the surrounding laser diode chips.

[0063] This describes a laser diode device that can have an optical output power of several watts, the optical output power being easily scalable by increasing the size of the housing and adding more laser diode chips.

[0064] In contrast to the exemplary embodiment of the Fig. 1A and Fig. 1B shows the schematic sectional view of the Fig. Figure 2 shows an embodiment in which laser diode chips are arranged side by side in a single row within the housing. The emitted light is reflected by the single deflecting element, in this case a deflecting mirror, to the cover element 20.

[0065] In connection with the Fig. Figure 3 shows an embodiment in which a beam-shaping optical element 4, in this case a cylindrical lens, is arranged between the radiation-emitting surface 1a of the laser diode chips 1 and the deflecting element 2. The beam-shaping optical element 4 serves to collimate the radiation. In this way, the laser diode chips 1 can be arranged as close together as possible without the beam lobes of the individual laser diode chips overlapping within the housing.

[0066] In connection with the Fig. 4 shows an embodiment in which the embodiment of Fig. 1A and Fig. 1B around the beam-shaping optical elements 4 of the exemplary embodiment of the Fig. 3 is added. The beam-shaping optical elements 4 are arranged between the radiation emission surfaces 1a and the deflecting element 2. The beam-shaping optical elements 4 can extend parallel to the deflecting element 2 on both sides of it. In this way, a particularly space-saving arrangement of the laser diode chips 1 in the housing is possible without the beam lobes of the individual laser diode chips overlapping within the housing.

[0067] In connection with the Fig. Figure 5 shows an embodiment based on a schematic sectional view, in which, unlike the embodiment of the Fig. 1A and Fig. 1B Each of the two rows of laser diode chips 1 is assigned its own optical deflecting element 2. Optical elements, in this case lenses 31, are arranged on the side of the cover element 20 facing away from the laser diode chips 1, which ensure beam shaping outside the housing. The scattering element 32 is omitted.

[0068] In connection with the Fig. Figure 6 describes an embodiment in more detail with reference to a schematic sectional view, in which a luminescence conversion element 30 is arranged on the outer side of the cover element 20 facing away from the laser diode chips 1. Such a luminescence conversion element 30 can also be used, for example, in the embodiments of Fig. 1A, Fig. 1B, Fig. 2, Fig. 3 and Fig.4. By means of the luminescence conversion element 30, it is possible, for example, for the laser diode device to be set up to emit white light, which is, for example, mixed light composed of a converted portion of the electromagnetic radiation generated by the laser diode chips 1 during operation and the electromagnetic radiation generated during operation.

Claims

[1] Laser diode device with - comprising a housing (10) having a mounting surface (11) in a cavity (19) of the housing (10), - at least two laser diode chips (1) which, during operation, each emit electromagnetic radiation through a radiation emission surface (1a), - at least a cover element (20) which is at least partially transparent to the electromagnetic radiation generated by the laser diode chips (1) during operation, - a deflecting element (2) which directs at least part of the electromagnetic radiation generated by the laser diode chips (1) during operation towards the cover element (20), wherein - the radiation emission surfaces (1a) of the laser diode chips (1) run transversely or perpendicularly to the mounting surface (11) and / or to the cover element (20), - the cover element (20) is connected to the housing (10), and - the cover element (20) tightly seals the housing (10), - the housing (10) is entirely free of any plastic material and is formed with a metal, - the housing (10) is formed in one piece, - the cover element (20) has a frame (21) that surrounds a window element (22) in a frame-like manner, wherein the window element (22) is transparent to at least some of the electromagnetic radiation generated by the laser diode chips (1) during operation, - the edging (21) is connected to the housing (10) by welding, and - each laser diode chip (1) is uniquely assigned a heat conducting element (3) which is arranged between the mounting surface (11) and the respective laser diode chip (1). [2] Laser diode device according to the previous claim, wherein the at least two laser diode chips (1) are unencapsulated. [3] Laser diode device according to one of the preceding claims, wherein the cover element (20) closes the housing (10) so tightly that the leakage rate is at most 5*10^(-8) (Pa*m^3) / s. [4] Laser diode device according to the previous claim, wherein the frame (21) is formed with a metal and the window element (22) comprises or consists of one of the following materials: glass, sapphire, ceramic. [5] Laser diode device according to one of the preceding claims, wherein at least one of the following optical elements is attached to the cover element (20): Luminescence conversion element (30), lens (31), scattering element (32). [6] Laser diode device according to one of the preceding claims, wherein the deflecting element (2) is formed by or comprises one of the following optical elements: mirror, prism. [7] Laser diode device according to one of the preceding claims, comprising a plurality of laser diode chips (1), wherein the housing (10) has at least one side wall (12) which extends obliquely or perpendicularly to the mounting surface (11), wherein the side wall (12) has a plurality of openings (13) through which an electrical connection element (14) is guided, with which an associated laser diode chip (1) is electrically connected. [8] Laser diode device according to one of the preceding claims, in which a beam-shaping optical element (4) is arranged between the radiation output surface (1a) of the laser diode chips (1) and the deflecting element (2). [9] Laser diode device according to one of the preceding claims wherein - the radiation emission surfaces (1a) of two of the laser diode chips (1) are facing each other and the deflecting element (2) is arranged between the two radiation emission surfaces (1a). [10] Laser diode device according to the previous claim comprising exactly one deflecting element (2).

Citation Information

Patent Citations

  • Package for a laser diode device, laser diode device and method of manufacturing a laser diode device

    DE102005036266A1

  • compact case

    DE102007062047A1

  • Light source and projector with at least one such light source

    DE102008063634A1

  • Semiconductor laser light source

    DE102010012604A1

  • arrangement

    DE19838518A1