A silicon carbide device and a method for forming a silicon carbide device

DE102014104201B4Undetermined Publication Date: 2026-06-25INFINEON TECHNOLOGIES AG
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Patent Information

Authority / Receiving Office
DE · DE
Patent Type
Patents
Current Assignee / Owner
INFINEON TECHNOLOGIES AG
Filing Date
2014-03-26
Publication Date
2026-06-25

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Abstract

Silicon carbide device (100) comprising: a silicon carbide substrate (110); an inorganic passivation layer structure (120) that at least partially covers a major surface (112) of the silicon carbide substrate (110); and a molding compound layer (130) in direct contact with and adjacent to the inorganic passivation layer structure (120).
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