Power semiconductor control and converter, transformer and device including these

Abstract

Power component for controlling a high-voltage electrical current (16), wherein the power component comprises at least one power semiconductor (8) with current input, current output and control connection (6), an electrically conductive current input plate (1), and an electrically conductive current output plate (2), wherein the current input of the power semiconductor (8) is connected to the current input plate (1) and the current output of the power semiconductor (8) is connected to the current output plate (2), wherein the control connection (6) is arranged between the plates (1, 2), wherein a connection means for a control device (17) is included, by means of which the control connection (6) can be controlled, wherein the connection means enables the integration of the control device into the power component and / or the connection of the control device (17) to the power component.and wherein the current input plate (1) and the current output plate (2) are connected to each other in their edge region by means of an electrically non-conductive connecting element (3) such that the plates (1, 2) and the connecting element (3) form a housing for the at least one power semiconductor (8) and the control terminal (6) which are arranged between the plates (1, 2), and wherein positively engaging contact points are provided at the edge of the two plates (1, 2) and at the connecting element (3) to ensure a secure contact between the connecting element (3) and the plates (1, 2).

Description

Technical field

[0001] The invention relates to a power component with a power semiconductor, which can be operated by means of intelligent control. Power components are used to control high electrical currents, in particular electrical currents in the kA range, as required in industrial processes, high-performance machines and electric vehicles, or in resistance welding. State of the art

[0002] DE 10 2008 054 306 A1 discloses a resin-sealed semiconductor device and a manufacturing process for it. In this process, semiconductor elements of the semiconductor device are cast in resin.

[0003] US 2013 / 0134571 A1 describes a power module assembly in which two heat sinks form a housing for a power module and a control module, which are arranged between the heat sinks and electrically connected to metal coatings of the heat sinks. No bonding agent is present between the metal coatings.

[0004] DE 10 2010 038 154 A1 discloses a laminate electronic component and a method for its manufacture. The laminate electronic component can represent a half-bridge circuit. DE 198 28 664 A1 discloses a semiconductor arrangement with at least two semiconductor chips. DE 10 2011 015 327 A1 discloses an inverter arrangement, a method for manufacturing an inverter arrangement, and a method for operating an inverter arrangement. None of these documents describes a housing for the described semiconductors.

[0005] The starting point of the invention is an arrangement as shown in EP1921908B1. Fig. Figure 1 shows a schematic side view of a circuit arrangement with a typical power module. The power module and the printed circuit board are positioned between a heat sink and a pressing device. The goal is to use such power modules as universally as possible in a wide variety of applications. To this end, the power modules should be compact, easily replaceable, and configurable for specific applications.

[0006] The object of the invention is therefore to realize a power component that is as compact as possible and universally configurable and retrofittable for a wide variety of applications, in particular the applications mentioned above. Disclosure of the invention

[0007] The invention starts with a power component for controlling a high-voltage electrical current.

[0008] High-current applications refer to currents such as those used in resistance welding, for driving servo motors, operating high-performance machinery, or powering vehicles. These are typically currents in the single- or double-digit kiloampere range at voltages above 50 volts, preferably from three-phase networks. They are primarily used in applications requiring a DC link voltage or current rectification, such as inverters and converters for operating electric motors, including vehicle electric motors.

[0009] The power component comprises at least one power semiconductor with a current input, a current output, and a control connection. The power component further comprises an electrically conductive current input plate and an electrically conductive current output plate, wherein the current input of the power semiconductor is connected to the current input plate and the current output of the power semiconductor is connected to the current output plate, as claimed in claim 1. Suitable plate materials include, for example, copper or molybdenum. The current input plate and / or the current output plate can be formed in one piece or in multiple pieces. The control connection of the power semiconductor is arranged between the two plates, which are preferably aligned parallel to each other. The power component also includes a connection point for a control device by means of which the control connection can be controlled.

[0010] The connection option can be implemented via a connection device for a control unit. This connection device can be designed in such a way that the control unit can be integrated into the power component and / or that an external control unit can be connected to the power component.

[0011] To integrate the control unit, a mounting device for the control unit can be provided between the two plates, for example, on a first component carrier arranged insulated between the plates, preferably essentially parallel to the plates. The mounting device can be a base or a recess on the component carrier, by means of which the components required for implementing the control unit / control unit connection can be arranged on the component carrier. The advantage here is that the power component can be implemented in a particularly compact form and that the control unit is protected from mechanical damage by the plates. Furthermore, a control unit can be easily retrofitted or installed in this way. The control unit can also be integrated into the component carrier during its manufacture.

[0012] However, it would also be conceivable to arrange the control device on the power component or component carrier in such a way that it is located outside the plates or only partially between the plates. The advantage here is that the control device is easily accessible. However, additional precautions would have to be taken for the mechanical protection of the control device. For example, a detachable plug connection could be provided by means of which the control device can be connected to the power component. Alternatively, the control device could be arranged on a second component carrier, which is connected to the first component carrier.

[0013] The connection could also be implemented as an industrial fieldbus interface (e.g., SERCOS, Profibus, and similar), thus enabling the connection of an external and / or internal control device to the power component via a fieldbus. This control device would then also need to have a compatible industrial fieldbus interface, e.g., an Ethernet interface for corresponding fieldbuses.

[0014] The power component can also include a combination of the aforementioned connection options, allowing for both an integrated solution and an external connection. Furthermore, an integrated control unit could communicate with an external control unit and / or a higher-level (process) control system via the fieldbus interface.

[0015] Connecting materials that are electrically conductive and enable metallurgical bonds can be used between the power semiconductor connections and the plates. Suitable joining processes include soldering or sintering, and possibly welding. The control connection is positioned between the two plates in such a way that it has no electrical contact with them and remains accessible.

[0016] The power semiconductor can be a current-controlled or voltage-controlled semiconductor, such as a bipolar transistor, an IGBT, a FET, a MOSFET, or similar device. The semiconductor can be controlled via the gate-source voltage. Semiconductors of other types are controlled according to their datasheets. Power semiconductors with a flat (metal) package are also suitable. The package protects the power semiconductor and, due to its flat shape, facilitates a flat connection to the plates. This improves the thermal conductivity of the overall assembly and reduces losses. The control connection is essentially located within the plates, parallel to them, and can be controlled independently of the current input or output.

[0017] The control device can be an integrated circuit, preferably one with sufficient processing power and memory to perform not only the control of the power semiconductor but also other higher-level tasks for operating the power component. External circuits such as drivers or fieldbus interfaces can also be included. However, these external circuits could also be integrated into the integrated circuit, thus requiring minimal or no external circuitry. Advantages of the invention

[0018] The connection means for linking and / or integrating a control unit ensures the feasibility of a compact and universally applicable power component which, when used with a preferably programmable control unit, can operate largely autonomously and is therefore easily configurable for a wide variety of applications. If a programmable control unit with sufficient computing power and memory is used, it can be easily reprogrammed or its functionality expanded for specific applications; program modules could be loaded or replaced. This could also be done via an internet connection or computer networks (e.g., cloud computing).

[0019] In a resistance welding application, for example, the power component could be optimized for the resistance welding process and controlled by a first control program. In an application for operating battery-powered electric vehicles, the power component could be optimized for this application by a second control program. If the power component is used in a power supply module, a corresponding third control program could be provided. All or individual control programs could be stored in the memory of the control unit and available for retrieval, or the control unit could be implemented in such a way that control programs can be easily loaded or modified, for example, via a fieldbus interface. The mechanical design of the power component simplifies its installation in mechanical component holders, such as those used for disc cells.This increases flexibility in industrial applications, because the power component according to the invention is easily replaceable or easily retrofitted.

[0020] According to claim 1, the plates are connected to each other at their edges by means of an electrically non-conductive connecting element, the plates and connecting element forming a housing. Suitable connecting elements include, for example, resins. Materials made of hard or soft plastic are also suitable. The housing formed by the plates and the connecting element surrounds and protects the components enclosed by the power component plates from external influences, in particular the power semiconductor and, in the integrated version, also the control unit. This is particularly advantageous in harsh environmental conditions, such as those frequently encountered in industrial environments. Splash protection in accordance with the IP protection classes is also very easily achieved.

[0021] If the power semiconductor and / or the control device are arranged on a component carrier, this component carrier can preferably be positioned substantially parallel between the two plates, with the control connection being connected to a conductor track encompassed by the component carrier. The component carrier can preferably be a printed circuit board (PCB). The component carrier can have vias (e.g., vertical interconnect accesses) to the plates.

[0022] Preferably, an arrangement is implemented comprising a power component and a control unit, wherein the control unit is connected to the power component via the connection means. In the case of an integrated solution, the control unit is at least partially, and preferably completely, encompassed by the power component. In the case of a non-integrated solution, the control unit is mechanically / electrically arranged on the power component or, preferably, connected to the power component via a fieldbus interface.

[0023] The control device preferably comprises a control pulse generator and preferably also a power supply for powering the control pulse generator. If the power semiconductor and the control device are arranged on a common component carrier, the transmission of the control pulses can be effected by means of conductor tracks attached to the component carrier.

[0024] Preferably, a fast driver stage is provided between the output of the control pulse generation and the control terminal of the power semiconductor to decouple the control pulse generation from the control terminal of the power semiconductor, thus enabling the power semiconductor to be driven in the shortest possible time. The driver stage can be integrated into the control device or arranged separately from the control device, for example, on a common component carrier. This arrangement ensures largely autonomous operation of the power component.

[0025] When the control unit is integrated into the power component, it can be used without any additional higher-level measures; only the power supply needs to be ensured. Depending on the application, this can be achieved using a DC voltage source or by tapping into a transformer coil and rectifying the tapped voltage. The latter is particularly useful, for example, when the power component is used together with a transformer.

[0026] Preferably, the control device and / or the power component is configured to output a status signal indicating the operating state of the power semiconductor, the power component, or the control device. This makes it possible to report a power component-specific operating state to a higher-level process controller. Depending on the type of operating state, this process controller can then initiate appropriate measures, such as fault detection, initiating cooling measures in case of overheating, and the like. The status signal can be transmitted via a proprietary interface or a standard interface (e.g., a fieldbus interface).

[0027] The control unit preferably comprises a computing unit for processing logic signals that may be required for the operation of the power semiconductor and / or for executing programs suitable for the operation of the power component, such as implementing lifetime monitoring. This allows for the consideration and comparison with reference values ​​of temperatures, voltages (including forward voltages), and currents occurring within the power semiconductor during operation. Suitable reference values ​​include, for example, specified values ​​with tolerance bands or reference values ​​determined on new power semiconductors.

[0028] The results of these operating modes could also be further processed by a process control system using the aforementioned status signal. Specifically, lifetime monitoring would allow for the early initiation of measures to ensure the continued and safe operation of the system.

[0029] Preferably, especially for the realization of the aforementioned lifetime monitoring, the control device and / or the power component includes a detection means for detecting and / or monitoring measured values, in particular values ​​relating to the semiconductor temperature and / or the semiconductor current and / or the semiconductor forward voltage and / or the semiconductor input voltage.

[0030] In addition, the aforementioned measures are preferably extended by including short-circuit monitoring and / or undervoltage monitoring for the power supply and / or the control pulse generation in the control unit and / or the power component. Depending on the application, it could also be provided that external voltages, such as a transformer voltage and / or a rectifier voltage and / or an intermediate circuit voltage, are additionally monitored and / or evaluated. Besides monitoring the power semiconductor or the power component itself, external application components could thus also be easily monitored by the control unit with respect to the power component. Application components are understood to be application-specific components, e.g., the welding transformer in a resistance welding application.

[0031] A particularly desirable feature of the control device is avalanche monitoring. This can be used to switch on the power semiconductor before the avalanche energy exceeds a predefined threshold. This controlled avalanche behavior protects the power semiconductor from damage caused by overvoltages, especially when high currents and short transit times occur.

[0032] All these measures serve to ensure the smooth operation of the performance component according to the invention, either by means of a higher-level process monitoring system or by means of the control device itself.

[0033] Preferably, the control device or power component includes a fieldbus interface for connecting it to an industrial fieldbus, or the control device or power component is suitable for establishing a communication connection with higher-level devices (e.g., process control) via a fieldbus.

[0034] The aforementioned status signals and comparison and monitoring results could thus also be transmitted to external devices via the fieldbus. Connecting additional components to the control unit could also be achieved in this way. Using the fieldbus interfaces, actual values ​​such as voltages, currents, temperatures, and all other measurable values ​​in the power component or power semiconductor could be read and processed, essentially in real time, by a higher-level system (control, process control, etc.). An industrial fieldbus encompasses all devices that enable data exchange between multiple bus participants, for example, based on the Ethernet standard, preferably in real time. Wireless connectivity is also conceivable.

[0035] The control device is particularly preferably configured to control several power semiconductors independently of one another, in particular a first power semiconductor independently of a second power semiconductor or a second power semiconductor independently of a first power semiconductor. If several power semiconductors are present, the aforementioned fieldbus interface can also be used to read out, process, and take into account the measured values ​​for the other power semiconductors separately and independently of each other, and to control the control inputs of each individual power semiconductor.

[0036] The control device can therefore also be configured to take into account the operating state of a second power semiconductor during the generation of the control pulses for controlling a first power semiconductor.

[0037] This measure would enable operation even without a higher-level control system, which typically coordinates the operation of power semiconductors. In this case, the control unit now coordinates the control pulses for the control inputs of a first power semiconductor, depending on the operating states of at least one other existing power semiconductor. This makes completely autonomous operation of the power component possible even without a higher-level control system.

[0038] Especially in rectifier applications, the control device could include means for realizing a comparison of a transformer voltage and / or a rectifier voltage or the blocking voltage, for example with reference voltages or with the voltages among themselves or with additional voltages derived from the voltages.

[0039] This would allow a short circuit in the transformer or rectifier branch to be detected easily and quickly and reported to a higher-level system, for example, via the aforementioned status output and / or a fieldbus connection. Alternatively, the control unit itself could initiate appropriate measures, such as shutting down a defective power semiconductor or rectifier branch.

[0040] For resistance welding applications, the forward voltage of the power semiconductor (e.g., MOSFET) or the switch-on time could be recorded. This would allow conclusions to be drawn at any time regarding the status of the welding gun (gun open / closed or contact yes / no).

[0041] It is also advantageous to store application-specific data in a memory unit included with the control device or the power component. In the aforementioned application, for example, data relevant to the welding process or data from the welding gun could be stored in the memory and kept readily available for retrieval. It would also be conceivable to store data from the power component itself in the integrated memory, so that the power component can be easily identified by a higher-level system by reading the data. This would also make an electronic nameplate for the assembly feasible.

[0042] Preferably, a transformer is equipped with a rectifier as described above, wherein the rectifier is connected to a secondary winding of the transformer and is encompassed by or arranged on the transformer.

[0043] This arrangement offers the advantage, for example in resistance welding applications, that a welding transformer for resistance welding already includes an intelligent rectifier and can be offered as a kit for resistance welding systems. Similar kits, with or without a transformer, are suitable for other applications, such as power supply modules for servo motors or electric vehicles.

[0044] The supply module operates as an inverter or converter and can include a power component according to the patent claims for generating an intermediate circuit DC voltage, which can then be inverted.

[0045] The solution according to the invention can also be used to implement a complete drive device with control unit and supply module. The use of the solution according to the invention for operating machines for the manufacture or processing of products is also conceivable. Character description Fig. Figure 1 schematically shows a first embodiment. Fig. Figure 2 schematically shows another embodiment. Fig. Figure 3 shows functional blocks of a first control device. Fig. Figure 4 shows functional blocks of a second control device. Fig. Figure 5 shows a supply module application. Fig. Figure 6 shows a resistance welding application.

[0046] Fig. Figure 1 shows a resistance welding diode with several semiconductors 8. The aforementioned resistance welding diode includes a component carrier 9 in the form of a printed circuit board between the two plates 1 and 2. Each semiconductor 8 has a metal housing 7, which is connected to the current input of the semiconductor 8. Preferably, a housing 7 is used that protects the semiconductor 8 at least on one side. The opposite current output 14 of the semiconductor 8 is freely accessible without a housing 7. A control connection 6 is also shown. However, semiconductors 8 without their own housing 7 are also conceivable. It is important that these semiconductors 8 have large-area current inputs and / or current outputs in order to reduce losses and power density. In addition, these semiconductors 8 must be suitable for transmitting high currents in the kA range.A copper plate 1 is provided as the electrically conductive current input plate 1, and a copper plate 2 is also provided as the electrically conductive current output plate 2. Alternatively, molybdenum could also be used. The selected materials should exhibit good electrical and thermal conductivity and a similar coefficient of thermal expansion to silicon. The thickness of the plates 1, 2 can be, for example, in the millimeter range (e.g., 2 mm). In the embodiment shown here, the current input of several MOSFET components 8 is connected to the current input plate 1, and the current output of the components 8 is connected to the current output plate 2. Both copper plates 1, 2 are aligned parallel and at a small distance from each other. This makes the arrangement very compact. The current input is directly and electrically connected to the current input plate 1 by soldering or sintering. For this purpose, solder 15 or sintering paste 15 is applied over the entire area of ​​the current input of the semiconductor package 7.The inner surface of the current input plate 1, facing the outside of the semiconductor package 7, is coated with a lacquer 10, which repels solder 15 or sintered material 15, except for the contact points for the semiconductor package 7. The current output is electrically connected to the current output plate 2 indirectly via electrical connections 14 (vias - vertical through-holes through the printed circuit board 9) by soldering and / or sintering and / or by copper domes (not shown), which may be part of the current output plate 2. A lacquer 10 may also be provided here. The gate 6 of the components 8 is accessible between plates 1 and 2, so that it can be controlled by a control device. The connection means (not shown) for the control device may be provided on the component carrier 9 and may be completely or partially surrounded by plates 1 and 2.The connection device enables the integration of the control unit into the power component. Alternatively or additionally, the connection device can also provide the option of connecting a non-integrated or only partially integrated control unit to the power component, for example via a fieldbus.

[0047] The control unit is capable of controlling the control inputs of all semiconductors 8, preferably by means of a driver (not shown), either together or separately. The control unit is also capable of controlling individual semiconductors 8 depending on the state of other semiconductors 8.

[0048] The copper plates 1, 2, arranged parallel and flush with each other at their edges, are connected at least at their edges by means of an electrically non-conductive plate connector 3, so that the copper plates 1, 2 together with the connector 3 form a housing for the components 6, 7, 8, 9 arranged between the plates 1, 2. The connector 3 can be a potting compound, but alternatively it can also be made of a plastic (e.g., a hard plastic or a soft plastic). The advantage is the resulting mechanical strength of the arrangement with improved thermal conductivity and reduced thermal expansion, and the resulting better protection of the connection points 14, 15 and the semiconductors 8.

[0049] Using the connecting element 3, an arrangement can be realized which, depending on the application, also meets the IP protection ratings required for its use. According to the detailed section of the Fig. 1 (see bottom left) Interlocking contact points can be provided at the edges of both copper plates 1, 2 and on the connecting element 3, ensuring a secure connection between the connecting element 3 and the plates 1, 2. This eliminates the need for large-area potting of both plates and simplifies manufacturing by requiring only a few assembly steps.

[0050] The current 16 generated during operation of the arrangement can be controlled by means of the control terminals 6 and thus flow in the specified direction from the current input plate 1 to the current output plate 2. The heat 5 generated by the semiconductors 6 during operation, on the other hand, can be dissipated in both directions from the current input plate 1 and the current output plate 2, and thus from the semiconductors 8 themselves. This behavior is indicated by the arrows 5 shown in the figure. This behavior is particularly advantageous in resistance welding, where very high currents are used and a correspondingly large amount of heat loss must be dissipated.

[0051] The image shows four semiconductors 8. The current inputs of these semiconductors are connected to each other via copper plate 1. Likewise, the current outputs are connected to each other via VIAS 14 and / or via copper domes (not shown) enclosed by copper plate 2, using copper plate 2.

[0052] The Fig. 2 reveals a similar arrangement as already shown in Fig. 1 shown. The same reference numerals denote the same features, unless otherwise indicated in the description and / or the drawing. The main difference to Fig. One difference is that the current inputs (e.g., top or bottom of the semiconductors 8) and the current outputs (e.g., top or bottom of the semiconductors 8) are directly connected to the copper plates 1, 2 by means of soldering or sintering (no vias, housings, etc. are used here). The control connections 6 are accessible via conductive traces, e.g., on a film or on a rigid substrate 9, and can be controlled by means of a control device 17. Another difference from Fig. 1 consists in the fact that both copper plates 1, 2 are each connected to an additional cooling plate 11 permeated with cooling channels 18. These cooling plates 11 could also be used in the case of the Fig. One known variant can be used. Alternatively, only one cooling plate 11 could be arranged on the power input plate 1 or on the power output plate 2. In principle, both variants ( Fig. 1 and Fig. 2) Alternatively, a power input plate 1 and / or a power output plate 2 with an integrated cooling channel 18 can be used, thus eliminating the need for separate additional cooling plates 11. The possible variants depend primarily on the power requirements of the application.

[0053] In the right-hand edge of the image, a printed circuit board (PCB) section 12 protrudes from the assembly by means of a recess in the connecting element 3 (not shown). The PCB section 12 could also be implemented as a second PCB (not shown), which could be mechanically and / or electrically connected to the first PCB 9 by means of a connector 13. This PCB 12, protruding from the assembly, includes the control unit 17 for controlling the semiconductors 8 connected in parallel between the plates 1 and 2. The connecting element 3 seals the entire assembly, at least partially, all around. The assembly is potted in the area of ​​the recess, so that the potting compound, together with the surrounding connecting element, forms a protective seal for the assembly against adverse external influences.Using suitable miniature components, it is also possible to mount the control unit 17 on the first circuit board 9, so that it too is completely enclosed by the boards 1, 2 and the connecting element 3. This variant is recommended for series production of the assembly. Alternatively or additionally, the integration of suitable mechanical and / or electrical interfaces, for example for a fieldbus, is conceivable (not shown).

[0054] Here too, a circuit board 9 that is as thin as possible is recommended, so that the mechanical properties are just sufficient to support the semiconductors and to stabilize the arrangement, the heat dissipation is optimal and the mechanical stresses in the board 9 are minimal when heated.

[0055] Fig. Figure 3 shows a rough schematic of the functional blocks of the control device according to the invention (e.g. reference numeral 17 in Fig. 2) for rectifier circuits. This can include a power supply 313 itself, or be connected to one. The power supply 313 can ensure the supply of all or individual components of the power component, for example by means of a DC / DC converter 316 to generate a galvanically isolated DC voltage for the functions of the power semiconductor and / or by means of a bootstrap circuit 314 from a transformer voltage and / or by means of a transformer auxiliary winding 315.

[0056] The control unit comprises a control pulse generator 319 as its central functional unit, which can be supplied by the previously described power supply 313. The control pulses can preferably be forwarded to a driver module 32, which can control the control inputs of the power semiconductors 31a, 31b of a half-bridge shown here only as an example. This arrangement is not limited to controlling only two power semiconductors 31a, 31b.

[0057] The control unit can also be configured to output a status signal for the operating state of the power semiconductor by means of a status message device 318. Additionally, a computing unit 33 for processing logic signals and / or for implementing lifetime monitoring for the power semiconductor can be included.

[0058] Likewise, a sensing device 36 may be included for acquiring and / or monitoring measured values, in particular for acquiring temperatures, voltages on components, transformers and / or rectifiers and / or semiconductors, or for acquiring currents on or in the installed components. In general, the sensing device 36 is intended to ensure the acquisition of all conceivable and measurable actual values ​​that may occur during the operation of the power component. Additionally, short-circuit monitoring and / or undervoltage monitoring 38 for the power supply 313 and / or the control pulse generation 319 may be provided. Likewise, avalanche monitoring 39 and a second additional temperature monitoring 310 may be provided.

[0059] These measures enable intensive monitoring of the power component's internal processes. For example, the power component can use the control unit to transmit its own operating status in real time to higher-level systems or make it available for retrieval as part of an application-specific condition monitoring system. A function block 317 for fault generation or the generation of fault signals can effectively complement the aforementioned monitoring. Cooling media can be monitored, and the functions of temperature switches can be implemented based on this monitoring.

[0060] Also shown is a function block 37, which enables the identification of the power component, as well as a function block 312 for providing or storing application-specific data, e.g., welding gun data, and a function block 311 for providing or storing application-specific data, e.g., welding data such as welding process data. It may also include a function that enables the targeted querying of such data.

[0061] Communication of monitoring results is facilitated by a separate fieldbus interface 34, or one integrated into the power component or control unit, for connecting the control unit or power component to an industrial fieldbus. This fieldbus interface 34 is preferably based on the Ethernet standard, such as the SERCOS fieldbus, or on a wireless fieldbus standard. The power component or control unit can be connected to a higher-level controller via the fieldbus interface 34 using a connection 35. Process data (identification data, temperatures, actual current values, actual voltage values, and the like) or the aforementioned collected data and / or the data of multiple power semiconductors can be transmitted or retrieved without extensive wiring.

[0062] The control device can also be configured to optionally consider the operating state of further power semiconductors 321 when controlling a first power semiconductor 31a and / or 31b. The control device can be configured to control the control terminals of several power semiconductors 321, 31a, 31b independently of one another and preferably to initiate temperature-dependent switching operations 320. The control device described here is particularly suitable for implementing power converters of all types, especially those based on full-bridge circuits, half-bridge circuits, or center-tap circuits.

[0063] The functional blocks shown in this figure can be fully or partially, or in any combination, encompassed by the power component and / or the control unit, depending on the application, for example, also in the form of programs executable on a computer. Some functional blocks, such as the driver 32 and / or power supply 313 or the fieldbus interface 34, can also be implemented as additional external components for the control unit. Preferably, however, all components described here are encompassed by an integrated circuit that represents the control unit.

[0064] The integrated circuit with / without external circuitry is preferably mounted on the board described in the Fig. 1 and Fig. The component carriers 9 shown in the 2 are arranged and are preferably provided between the plates 1, 2.

[0065] Fig. Figure 4 shows a rough schematic of the functional blocks of the control device according to the invention, which is designed for the purpose of controlling an inverter. The associated inverter is in Fig. 5 shown. The function blocks shown here correspond to those in Fig. The three explained function blocks have identical reference symbols. Their descriptions are detailed within the context of... Fig. 3 referenced. Reference numbers 51a to f are at Fig. 5 explained.

[0066] Fig. Figure 5 shows a section of a power supply module for a three-phase servomotor 524, preferably with position sensing (not shown). The power semiconductors used in the three half-bridges 51a,d and 51b,e and 51c,f shown can be powered by the power components according to the invention. Fig. 1 and Fig. 2. The half-bridges can be implemented with a corresponding description. They can be connected to a DC link (+ / -).

[0067] Fig. Figure 6 shows, as an application example, a resistance welding system comprising a welding controller 60, a welding gun 61 with a welding transformer 62, and a rectifier 63. The rectifier 63 and the transformer 62 form a compact unit separate from the gun 61 because the rectifier 63 is typically mounted on the transformer 62 before it is attached to the gun 61. As claimed, the transformer 62 or rectifier 63 comprises the solution according to the invention and is connected to the welding controller 60 via a wired Ethernet connection 64 using the SERCOS III protocol. Wireless solutions would also be conceivable.

[0068] All in the Fig. 1, Fig. 2, Fig. 3, Fig. 4, Fig. 5 to Fig.The features shown in Figure 6 can also be combined in modified form to realize alternative embodiments. Alternative embodiments may also include additional features mentioned in the description that are not shown or mentioned in the figure description. The application examples shown here are not intended to limit the applications that can be realized using the invention. For example, a power component according to the invention can be integrated into a wide variety of rectifier applications and electronic circuits (full bridge, half bridge, center-tap circuit).

Claims

[1] Power component for controlling a high-voltage electric current (16), wherein the power component comprises at least one power semiconductor (8) with a current input, current output and control terminal (6), an electrically conductive current input plate (1) and an electrically conductive current output plate (2), wherein the current input of the power semiconductor (8) is connected to the current input plate (1) and the current output of the power semiconductor (8) is connected to the current output plate (2), wherein the control terminal (6) is arranged between the plates (1, 2), wherein a connection means for a control device (17) is included, by means of which the control terminal (6) can be controlled, wherein the connection means enables the integration of the control device into the power component and / or the connection of the control device (17) to the power component,and wherein the current input plate (1) and the current output plate (2) are connected to each other in their edge region by means of an electrically non-conductive connecting element (3) such that the plates (1, 2) and the connecting element (3) form a housing for the at least one power semiconductor (8) and the control terminal (6) which are arranged between the plates (1, 2), and wherein positively engaging contact points are provided at the edge of the two plates (1, 2) and at the connecting element (3) to ensure a secure contact between the connecting element (3) and the plates (1, 2). [2] Power component according to claim 1, wherein a control device (17) is connected by means of the connection means, which includes a control pulse generation (319), wherein the control device (17) includes or is connected to a power supply (313, 314, 315, 316), and wherein the power supply (313, 314, 315, 316) is also provided for supplying the control pulse generation (319). [3] Power component according to claim 2, wherein the control device (17) or the power component is configured to output a status signal for the operating state of the power component or the power semiconductor (8) or the control device (17). [4] Power component according to one of the preceding claims 2 or 3, wherein the control device (17) comprises a computing device (33) for processing logic signals and / or for executing programs such as condition monitoring or lifetime monitoring for the power semiconductor. [5] Power component according to any one of the preceding claims 2 to 4, wherein the control device (17) includes a detection means (36) for detecting and / or monitoring measured values, in particular with regard to temperatures and / or currents and / or voltages at or in the power semiconductor (8) or power component or at other components included by the power component. [6] Power component according to any one of the preceding claims 2 to 5, wherein the control device (17) includes a short-circuit monitoring and / or an undervoltage monitoring (38). [7] Performance component according to one of the preceding claims 2 to 6, wherein the control device (17) includes an avalanche monitoring system (39). [8] Power component according to any one of the preceding claims 2 to 7, wherein the control device (17) or the power component provides a fieldbus interface (34) for connecting the control device (17) or the power component to an industrial fieldbus, preferably a fieldbus based on the Ethernet standard, such as the SERCOS fieldbus or a wireless fieldbus. [9] Power component according to one of the preceding claims, wherein the control device (17) is configured to control the control terminals of several power semiconductors (8) independently of each other. [10] Power component according to one of the preceding claims, wherein the control device (17) is configured to take into account the operating state of a second power semiconductor (8) when controlling a first power semiconductor (8). [11] Power converter, in particular rectifier, comprising a power component according to any of the preceding claims. [12] Transformer, in particular a welding transformer for resistance welding, with a power converter according to claim 11, wherein the power converter is connected to a secondary winding of the transformer. [13] Device, in particular equipment, automation component, machine or vehicle, in particular electric vehicle, resistance welding device, power supply module for servo motors, comprising a transformer according to claim 12 and / or a power converter according to claim 11.

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