Methods for manufacturing optoelectronic semiconductor components

Abstract

Method for manufacturing an optoelectronic semiconductor component (1) comprising the following steps: A) Providing a chip carrier (2) with electrical conductor structures (22) on a carrier top surface (20), B) Attaching at least one semiconductor chip (3) configured for light generation to at least one of the electrical conductor structures (22), C) Applying at least one sealing structure (4) to at least one of the electrical conductor structures (22) such that the sealing structure (4) completely encloses at least one contact area (24) in plan view, D) Producing a potting element (5) directly on the at least one semiconductor chip (3) and directly on the at least one sealing structure (4) by injection molding or compression molding, wherein the at least one sealing structure (4) seals the at least one contact area (24) against a material of the potting element (5) in an injection mold (61, 62).such that the at least one contact area (24) remains free from the potting compound (5), wherein the conductor structures (22) are electrical conductors and electrical contact surfaces, and wherein the contact area (24) comprises at least two of the electrical contact surfaces which are provided for external electrical contacting of the finished semiconductor component (1).

Description

A method for producing optoelectronic semiconductor components is specified.The publication US 2012 / 0 241 804 A1 relates to a method for producing a light-emitting component with a housing.The publication US 2011 / 0 024 861 A1 specifies a production method for a cast image sensor structure.The publication US 2014 / 0 175 502 A1 relates to an LED housing structure having a bank.The publication US 2015 / 0 290 887 A1 specifies an optical article and a production method.One object to be achieved is to specify optoelectronic semiconductor components which have a potting body which can be produced efficiently by means of injection molding or transfer molding.This object is achieved by a method having the features of the independent claim. Preferred developments are the subject matter of the dependent claims.According to at least one embodiment, the method serves for producing optoelectronic semiconductor components. The semiconductor components are preferably light-emitting diodes. The semiconductor components are thus configured in particular for generating radiation, specifically for generating visible light.According to at least one embodiment, a chip carrier is provided. The chip carrier is preferably the component which carries and mechanically stabilizes the finished semiconductor components. For example, the chip carrier is a ceramic substrate, a glass substrate or a semiconductor substrate. Likewise, printed circuit boards such as metal core boards or printed circuit boards may be used for the chip carrier.According to at least one embodiment, the chip carrier comprises electrical conductor structures on a carrier top side. The electrical conductor structures are, for example, electrical conductor tracks and / or electrical contact surfaces. The electrical conductor tracks allow interconnection within the semiconductor component. The electrical contact surfaces serve in particular for internal and / or external contacting of the semiconductor component. The conductor structures are preferably formed by one or more metallizations.According to at least one embodiment, the method comprises the step of attaching one or more semiconductor chips to at least one of the electrical conductor structures. For example, the at least one semiconductor chip is adhesively bonded or, preferably, soldered on in an electrically conductive manner. It is possible for there to be a one-to-one correspondence between the conductor structures and the semiconductor chips. For example, for each chip carrier for a finished semiconductor component, at least two or at least four and / or at most 16 or at most eight of the semiconductor chips are applied.The semiconductor chips may be flip chips in which electrical contacts are located on a single side, or chips with electrical contacts on main sides opposite one another. In the case of flip chips, the electrical contacts can face the carrier top side or else face away from the carrier top side. The at least one semiconductor chip is configured for generating radiation, preferably for generating light. For example, the at least one semiconductor chip emits blue light or white light during operation. In each of the semiconductor components, only semiconductor chips of identical construction or semiconductor chips different from one another can be installed, for example for generating light of different colors.According to at least one embodiment, at least one sealing structure is attached. The one or more sealing structures are partially or completely applied to the electrical conductor structures. In particular, the sealing structures are located completely on the carrier top side. The sealing structures are preferably permanent components, so that the sealing structures are present in the finished semiconductor components.According to at least one embodiment, the sealing structures surround at least one contact region completely all around, as seen in plan view of the carrier top side. The sealing structure forms a continuous frame around the contact area. In this case, the contact region contains a plurality of electrical contact surfaces for external electrical contacting of the finished semiconductor components.According to at least one embodiment, the method comprises the step of producing a potting body. The casting body is preferably produced by means of injection molding or transfer molding. In this case, the casting body is formed directly on the at least one semiconductor chip and directly on the sealing structure. That is, the sealing body touches both the semiconductor chip and the sealing structure.According to at least one embodiment, the production of the casting body takes place in an injection mold. The injection molding tool preferably comprises a plurality of parts, in particular two parts, which are mounted so as to be movable relative to one another. The casting tool is used to shape the casting body.According to at least one embodiment, the sealing structure in the injection mold seals the at least one contact region with respect to a material of the potting body during the production of the potting body. In other words, due to the sealing structure, the contact region remains free of the potting body. If the sealing structure were not present in the injection mold, the contact region would be covered by the potting body.In at least one embodiment, the method is configured for producing optoelectronic semiconductor components and comprises the following steps, in particular in the stated sequence: A) providing a chip carrier having electrical conductor structures on a carrier top side, B) attaching at least one semiconductor chip configured for generating light to at least one of the electrical conductor structures, C) applying at least one sealing structure on at least one of the electrical conductor structures, such that the sealing structure completely surrounds at least one contact region, as seen in plan view, D) generating a casting layer directly on the at least one semiconductor chip and directly on the at least one sealing structure by means of injection molding or transfer molding, wherein the at least one sealing structure seals the at least one contact region in an injection mold with respect to a material of the casting body, such that the at least one contact region remains free of the casting body.In contrast to the above-mentioned enumeration, method steps B) and C) can also be interchanged.When producing cast bodies in large-area products by means of injection molding or transfer molding, also referred to as molding, a sealing film is usually used for sealing in an injection mold. Such a method is also referred to as film assisted molding or FAM for short. However, sealing via sealing foils is difficult if different height levels occur, i.e. if potting bodies with different heights are to be produced in a component. This is due in particular to height tolerances occurring between the chip carrier and the semiconductor chips applied thereon and optionally of phosphor bodies.In order to achieve a sufficient seal in the case of cast bodies with different thicknesses, very thick sealing films must be used in conventional methods in order to be able to compensate for the height tolerances. In this case, a strong film deformation in the injection mold must be accepted, which leads to non-uniformly shaped component surfaces.In the method described here, instead of a very thick sealing film, the sealing structure is used in order to produce on at least one plane a sealing frame which seals the contact region with respect to the material of the casting body. Such a sealing frame formed by the sealing structure is also referred to as glob top. In particular, the sealing structure is compressed by a clamping force in the injection mold or presses itself into the sealing film, so that a seal of the contact region with respect to the remaining cavity to be filled with the material for the casting body is produced.Due to the elasticity of the sealing structure, in particular of the glob top, significantly higher tolerances can be compensated for than only by compressing a thick sealing film. Thus, semiconductor devices having uniformly shaped surfaces can be realized. Due to the efficient, particularly tight sealing by means of the sealing structure, additional reworking steps, such as the cleaning of surfaces, can be avoided. In addition, it is possible to reduce the complexity of the injection molding tool, since, for example, no or fewer movable tool inserts are required.Briefly, the method described herein is a film assisted molding having a sealing structure in the form of a glob top.According to at least one embodiment, in step D) a sealing foil is located between the injection mold and the semiconductor chip and between the injection mold and the sealing structure. The sealing film serves for sealing with respect to the material of the casting body.According to at least one embodiment, the sealing film in step D), in particular at the temperature used in step D), has an elastic modulus of at least 20 MPa or 30 MPa or 40 MPa. Alternatively or additionally, the modulus of elasticity of the sealing film is at most 90 MPa or 80 MPa or 70 MPa. In other words, a comparatively soft sealing film is used.According to at least one embodiment, the sealing film has a thickness of at least 10 μm or 20 μm or 30 μm immediately before step D). Alternatively or additionally, the thickness of the sealing film is at most 100 μm or 70 μm or 50 μm. That is, a comparatively thin sealing film is used.According to at least one embodiment, the sealing structure in step D) has a greater modulus of elasticity in places or in whole than the sealing film. In particular, the modulus of elasticity of the sealing structure in step D) is greater than that of the sealing film by at least a factor of 1.5 or 2 or 3. As a result, particularly dimensionally stable sealing structures can be achieved, such that the material for the casting body can be processed at comparatively high pressures and / or with a comparatively high viscosity in step D).According to at least one embodiment, the sealing structure is made of an epoxy in places or in its entirety.According to at least one embodiment, the sealing film is made of polyethylene terephthalate, PET for short. Alternatively, the sealing film is made of an ethylene-tetrafluoroethylene copolymer, ETFE for short. Furthermore, it is possible for the sealing film to be composed of a plurality of layers, also of different materials.According to at least one embodiment, the sealing structure in step D) has a smaller modulus of elasticity in places or in total than the sealing film. For example, the modulus of elasticity of the sealing structure is lower than the modulus of elasticity of the sealing film by at least a factor of 1.25 or 1.5 or 2. In the case of comparatively soft sealing structures, which preferably have a relatively small thickness, a particularly tight sealing with respect to the sealing film can be achieved.According to at least one embodiment, the sealing structure is made of a silicone or a silicone-epoxy hybrid material in places or in its entirety.According to at least one embodiment, in step D) the sealing structure is compressed. In step D), in this case, in particular no deformation or no significant deformation of the sealing film takes place. For example, the deformation of the sealing film is at most 10% of the average thickness of the sealing film before compression. The sealing structure is deformed, for example, by at least 15% or 20% and / or by at most 30% or 25% of its average thickness.According to at least one embodiment, the sealing structure is pressed into the sealing film in step D). During this pressing in, a thickness of the sealing structure preferably changes only by at most 20% or 15% or 10% of an average thickness of the sealing structure and / or a thickness of the sealing film changes by at least 10% or 20% or 30%. In other words, less the sealing structure is then deformed, but mainly the sealing film.According to at least one embodiment, the sealing structure after step D) projects beyond the casting body in the direction away from the carrier top side. This applies in particular after complete production of the casting body and after removal of the semiconductor components from the injection mold. This protrusion results in particular from a deformation of the sealing structure and / or of the sealing film in step D).Alternatively, it is possible for the sealing structure and the casting body to terminate flush or approximately flush with one another in the direction away from the carrier top side. Approximately flush means, for example, a tolerance of at most 10 μm or 5 μm or 2 μm.According to at least one embodiment, a phosphor body is applied to the at least one semiconductor chip. The phosphor body is, for example, a potting body or a plate comprising at least one phosphor. Such platelets can be based on a comparatively soft material such as a silicone or from hard materials such as a glass or a ceramic. Such phosphor bodies may be located directly on a chip top side of the semiconductor chip facing away from the carrier top side. Furthermore, it is possible for such phosphor bodies to be adhesively bonded to the chip top side via a connecting means such as an adhesive, for example a glass or a silicone. It is possible for each semiconductor chip to be assigned its own phosphor body. Alternatively, a plurality or all of the semiconductor chips can be covered by a common phosphor body. The phosphor body contains one or more phosphors, preferably inorganic phosphors such as YAG:Ce or quantum dots.According to at least one embodiment, after step D), the chip top side of the at least one semiconductor chip facing away from the chip carrier or a body top side of the at least one phosphor body facing away from the chip carrier terminates flush with the potting body in the direction away from the carrier top side. This applies in particular with a tolerance of at most 10 μm or 5 μm or 2 μm.According to at least one embodiment, the potting body has a smaller height above the carrier top side at the sealing structure than at the semiconductor chip. In particular, one or more steps are formed in the casting body. It is thus possible that the sealing structure and the semiconductor chip, optionally together with the phosphor body, can have different heights and nevertheless each terminate flush or approximately flush with the potting body.According to at least one embodiment, the sealing structure is applied in places directly on the carrier top side, in particular on a base material of the chip carrier, and in places directly on the conductor structures. The sealing structure closes a gap between adjacent conductor structures in the direction parallel to the carrier top side, so that a sufficient seal with respect to the material of the casting body is achieved. A height of the conductor structures above the base material of the chip carrier is, for example, at least 20 μm or 40 μm and / or at most 100 μm or 80 μm or 60 μm.According to at least one embodiment, the sealing structure has an average thickness or height above the carrier top side of at least 50 μm or 100 μm or 150 μm. Alternatively or additionally, the average thickness or height of the sealing structure is at most 400 μm or 300 μm or 230 μm.According to at least one embodiment, the potting body and the sealing structure comprise materials different from one another, in particular materials from different material classes, such as a silicone for the potting body and an epoxy for the sealing structure. Alternatively, it is possible for the sealing structure and the casting body to be based on the same material, for example each on a silicone.According to at least one embodiment, the casting body is formed white. In particular, the casting body has a high reflectivity for visible light. Alternatively, the casting body can be transparent. The sealing structure may have a different color or the same color as the potting body. For example, it is possible for the sealing structure to have a specifically different color than the potting body, for example black or gray, in order to form positioning marks or other markings.According to at least one embodiment, a thickness of the conductor structures above the carrier top side is at least 10% or 20% of an average thickness of the sealing structure. Alternatively or additionally, the conductor structures have a thickness of at most 40%, or 30%, or 25% of the average thickness of the sealing structure. In other words, the conductor structures are relatively thick compared to the sealing structure.According to at least one embodiment, the sealing structure is applied in step C) as a paste or as a liquid. The application can be effected by printing, doctoring or by means of pasty recording. Curing preferably takes place after the application of the sealing structure, so that the sealing structure in step D) has a greater hardness than in the originally applied state.According to at least one embodiment, the casting body is restricted to a region above the carrier top side. Side surfaces and a carrier underside of the chip carrier opposite the carrier upper side are preferably free of the potting body. It is possible that the entire carrier top side is covered by the potting body together with the contact region, the sealing structure and the at least one semiconductor chip. In particular, in a plan view of the finished semiconductor components, only the luminescent bodies, the casting body, the sealing structure and the contact region can be seen.According to at least one embodiment, the sealing structure has a width decreasing monotonically or strictly monotonically in the direction away from the carrier top side. Viewed in cross section, the sealing structure appears, for example, triangular or parabolic or semicircular. Alternatively or additionally, it is possible for the casting body to cover the sealing structure in places, as seen in plan view, in particular starting from a point of greatest thickness of the sealing structure in the direction away from the contact region.According to at least one embodiment, the method comprises the step of singulating into the semiconductor components. During the separation, in particular the chip carrier and the casting body are cut through, for example, by sawing. The finished semiconductor components have, for example, on side surfaces, singulating tracks on the chip carrier and on the potting body. The contact region is preferably not affected by such a separation, preferably just as little as the sealing structure.Furthermore, a semiconductor component produced by such a method is specified. Features of the method therefore also apply to the completely produced semiconductor component and vice versa.A method described here and a semiconductor component described here are explained in more detail below with reference to the drawing on the basis of exemplary embodiments. Identical reference numerals indicate identical elements in the individual figures. However, no references to scale are shown here; rather, individual elements may be represented with exaggerated size for better understanding.The following are shown: FIG. 1 shows schematic perspective representations of method steps of a method described here for producing optoelectronic semiconductor components described here, FIGS. 2 and 7 are schematic sectional representations of method steps of a method described here, and FIGS. 3 to 6 show schematic sectional representations of exemplary embodiments of optoelectronic semiconductor components described here.FIG. 1 illustrates a method for producing optoelectronic semiconductor components 1. According to FIG. 1A, a chip carrier 2 is provided. A plurality of electrical conductor structures 22 are located on a carrier top side 20 of the chip carrier 2. The conductor structures 22 are preferably formed by one or more metallizations. For sufficient current-carrying capacity, the conductor structures 22 have a thickness of between 40 μm and 60 μm, for example. In particular, the conductor structures 22 comprise copper, gold, silver, tin, platinum, chromium, aluminum and / or palladium.FIG. 1B shows that a plurality of semiconductor chips 3, in particular light-emitting diode chips, are applied to the conductor structures 22. The light-emitting diode chips 3 are electrically connected in series, for example. Furthermore, the semiconductor chips 3 are preferably each provided with a phosphor body 32. In this case, there is preferably a one-to-one association between semiconductor chips 3 and luminescent bodies 32.Optionally, the phosphor bodies 32 have a cutout in a corner region. In each of these recesses, a bonding wire 35 is attached, which electrically connects the semiconductor chips 3 to the conductor structures 22. Electrical contacts of the semiconductor chips 3 are located, for example, on main sides of the semiconductor chips 3 lying opposite one another.Furthermore, it can be seen in FIG. 1B that a plurality of gaps 25 are located between the conductor structures 22, in which gaps the carrier top side 20 is locally exposed. In these gaps 25, for example, there is a height difference of approximately 50 μm.According to FIG. 1C, a sealing structure 4 is applied, for example as a paste, which is subsequently cured and / or dried, also referred to as a glob top. The sealing structure 4 extends with a constant or approximately constant height above the carrier top side 20 all around in a closed path around a contact region 24. The contact region 24 contains, for example, two electrical contact surfaces for external electrical contacting of the finished semiconductor component 1. the gaps 25 shown in FIG. 1B are preferably also sealed by the sealing structure 4. For example, the sealing structure is made black and made of an epoxy.According to FIG. 1D, a casting body 5 is produced. The potting body 5 terminates flush or approximately flush with a body top side 33 of the luminescent bodies 32 facing away from the chip carrier 2 and with the sealing structure 4. The sealing structure 4 prevents the contact region 24 from being contaminated with material of the potting body 5 during the production of the potting body 5.Optionally, the potting body 5 has a step between the contact region 24 and the fluorescent bodies 32. By means of this step, for example, a height difference of at least 50 μm or 100 μm and / or of at most 300 μm or 200 μm is bridged. This is due in particular to the comparatively low thickness of the sealing structure of approximately 100 μm + / - 50 μm. In contrast, the semiconductor chips 3 together with the phosphor bodies 32 have a thickness of approximately 200 μm to 300 μm, for example.In FIG. 2, the step of manufacturing the sealing body 5 is illustrated. The casting body 5 is produced by injection molding or transfer molding, also referred to as molding, in an injection mold having an upper part 61 and a lower part 62. For sealing, a sealing foil 66 is used between the upper part 61 and the chip carriers 2. The sealing film 66 is made of, for example, ETFE or PET with a thickness of approximately 50 μm. The sealing foil 66 is placed directly on the body top sides 33 and directly on the sealing structure 4. In this case, the sealing structure 4 is preferably deformed in order to compensate for thickness tolerances. In particular, the sealing structure 4 has a greater elasticity, i.e. a smaller modulus of elasticity, than the semiconductor chips 3 together with the luminescent bodies 32.Optionally, the chip carrier 2 has the conductor structures 22 both on the carrier top side 20 and on an opposite carrier bottom side. Electrical vias can be formed in the carrier 2, which extend from the carrier top side 20 to the carrier bottom side. The carrier 2 is preferably free of electrical plated-through holes, so that the conductor structures 22 on the carrier bottom side serve only for fastening and for heat dissipation.A further exemplary embodiment is illustrated in FIG. 3. The semiconductor component 1 does not have a phosphor body in this example. The potting body 5 terminates flush with the chip top side 30 and with the sealing structure 4, with a tolerance of a few micrometers. In particular, the tolerance is at most 10% or 5% of an average thickness of the sealing structure 4 and / or of the semiconductor chips 3, as can also apply in all other exemplary embodiments.Viewed in cross section, it is possible for the sealing structure 4 to lie completely on the conductor structures 22 outside the gaps 25, compare FIG. 1B.In the exemplary embodiment of FIG. 4, the sealing structure 4, viewed in cross section, also lies outside the gaps only partially on the conductor structures 22. The body top sides 33 terminate flush with the casting body 5. The sealing structure 4 is made of a soft material such as a silicone, for example, and protrudes beyond the finished casting body 5.According to FIG. 5, the body top side 33 terminates flush with the casting body 5. Optionally, it is possible, as in all other exemplary embodiments, for the phosphor body 32 to project laterally beyond the associated semiconductor chip 3.The sealing structure 4 is approximately the same height as the semiconductor chip 3 together with the phosphor body 32, and the sealing body 5 protrudes slightly beyond it by the sealing structure 4.It can be seen in FIG. 6 that the phosphor body 32 protrudes slightly beyond the potting body 5. As in all other exemplary embodiments, it is possible for the semiconductor chip 3 to be designed as a flip chip with electrical contact pads facing the carrier 2.During the production of the casting body 5, the sealing structure 4 has been pressed together, so that a side of the sealing structure 4 facing away from the carrier top side 20 is pressed flat and runs approximately parallel to the carrier top side 20.In FIG. 7, further configurations of the sealing structure 4 are optionally illustrated. The sealing structures 4 shown in FIG. 7 can be used accordingly in all other exemplary embodiments.According to FIGS. 7A and 7B, the sealing structure 4 is composed of a plurality of parts. For example, see FIG. 7A, a comparatively hard region 4A is present, for example made of an epoxy, which is covered by a thin, softer region 4B in the direction away from the carrier top side 20.As in all other exemplary embodiments, it is possible that the sealing structure 4 is not round or semicircular or parabolic, as seen in cross section, but rectangular, see FIG. 7A.According to FIG. 7B, the sealing structure 4 is composed of three partial regions 4 a, 4 b, 4 c. For example, the partial regions 4 a, 4 care formed from soft material and the region 4 bis formed from a relatively hard material. As a result, the gaps 25, see FIG. 1B, can be closed efficiently and a good tightness with respect to the sealing film can be achieved. At the same time, the sealing structure 4 is deformed only slightly overall in the injection mold 61, 62.In the configuration of FIG. 7C, the sealing structure 4 has not only one, but two maxima, as seen in cross section. This makes it possible to achieve a secure seal with respect to the sealing film 66.Unless otherwise indicated, the components shown in the figures preferably follow one another directly in the sequence indicated. Layers that do not touch each other in the figures are spaced apart from each other. Insofar as lines are drawn parallel to one another, the corresponding surfaces are likewise oriented parallel to one another. Likewise, unless otherwise indicated, the relative thickness ratios, length ratios and positions of the illustrated components with respect to one another are correctly reproduced in the figures.List of reference characters1 Optoelectronic semiconductor component 2 Chip carrier 20 Carrier top side 22 Electrical conductor structure 24 Contact region 25 Gap 3 Semiconductor chip 30 Chip top side 32 Phosphor body 33 Body top side 35 Bonding wire 4 Sealing structure 5 Casting body 61 Injection molding tool, upper part 62 Injection molding tool, lower part 66 Sealing foil

Claims

Method for producing an optoelectronic semiconductor component (1), comprising the following steps: A) providing a chip carrier (2) having electrical conductor structures (22) on a carrier top side (20), B) attaching at least one semiconductor chip (3) which is configured for generating light to at least one of the electrical conductor structures (22), C) applying at least one sealing structure (4) to at least one of the electrical conductor structures (22), such that the sealing structure (4) completely surrounds at least one contact region (24), viewed in plan view, D) producing a casting body (5) directly on the at least one semiconductor chip (3) and directly on the at least one sealing structure (4) by means of injection molding or transfer molding, wherein the at least one sealing structure (4) seals the at least one contact region (24) with respect to a material of the casting body (5) in an injection molding tool (61, 62), such that the at least one contact region (24) remains free of the potting body (5), wherein the conductor structures (22) are electrical conductor tracks and electrical contact surfaces, and wherein the contact region (24) comprises at least two of the electrical contact surfaces which are configured for the external electrical contacting of the finished semiconductor component (1).Method according to the preceding claim, wherein in step D) between the injection mould (61) and the semiconductor chip (3) and the sealing structure (4) there is a sealing film (66) which has a modulus of elasticity at the temperature used in step D) of between 20 MPa and 90 MPa inclusive and a thickness of between 20 μm and 100 μm inclusive.Method according to the preceding claim, wherein the sealing structure (4) in step D) has, at least in places, an elasticity modulus which is greater than the sealing film (66) by at least a factor of 2.Method according to the preceding claim, wherein the sealing structure (4) is at least in places made of an epoxy and the sealing film (66) is made of polyethylene terephthalate or of an ethylene-tetrafluoroethylene copolymer.Method according to one of Claims 2 to 4, wherein the sealing structure (4) in step D) has, at least in places, an elasticity modulus which is lower than the sealing film (66) by at least a factor of 1.5.Method according to the preceding claim, wherein the sealing structure (4) is made at least in places from a silicone.Method according to one of Claims 2 to 6, wherein, in step D), the sealing structure (4) is pressed into the sealing film (66).Method according to the preceding claim, wherein the sealing structure (4) after step D) projects beyond the casting body (5) in the direction away from the carrier top side (20).Method according to one of the preceding claims, further comprising applying a phosphor body (32) to a chip top side (30) of the semiconductor chip (3) facing away from the chip carrier (2), wherein after step D) a body top side (33) of the phosphor body (32) facing away from the chip carrier (2) terminates flush with the potting body (5) in the direction away from the carrier top side (20), with a tolerance of at most 5 μm.Method according to one of the preceding claims, wherein the potting body (5) has a smaller height above the carrier top side (20) at the sealing structure (4) than at the semiconductor chip (3).Method according to one of the preceding claims, wherein the sealing structure (4) is applied in places directly on the carrier top side (20) and in places directly on the conductor structures (22), so that gaps (25) between adjacent conductor structures (22) are closed by the sealing structure (4) in the direction parallel to the carrier top side (20).Method according to the preceding claim, wherein a thickness of the conductor structures (22) above the carrier top side (20) is between 10% and 30% inclusive of an average thickness of the sealing structure (4).Method according to one of claims 1 to 6, wherein in step D) the sealing structure (4) is compressed.Method according to one of the preceding claims, wherein the sealing structure (4) is first applied as a paste in step C) and is subsequently cured.

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