Device for examining and / or processing a sample

Abstract

The present invention relates to a device (2400, 2600) for examining and / or processing a sample (400, 2010), comprising: (a) a scanning particle microscope (2410) for providing a beam of charged particles (840) which can be directed onto a surface of the sample (400, 2010); and (b) a scanning probe microscope (2470) with a deflectable probe (200, 500, 800, 900, 1000, 1100, 1200, 1300, 1500, 1600, 1640, 1670, 2600); (c) wherein a detection structure (230, 530, 1030, 1130, 133, 1530, 1630, 1690, 2630) is attached to the deflectable probe (200, 500, 800, 900, 1000, 1100, 1200, 1300, 1500, 1600, 1640, 1670, 2600) and (d) wherein the device is configured to determine a deflection of the probe by directing the beam of charged particles (240) onto the detection structure (230, 530, 1030).

Description

1. Technical area

[0001] The present invention relates to a device and a method for examining and / or processing a sample. In particular, the present invention relates to a device and a method for moving a particle of the sample. 2. State of the art

[0002] As a result of the growing integration density in the semiconductor industry, photolithography masks must image increasingly smaller structures on wafers. On the photolithography side, the trend toward increasing integration density is being addressed by shifting the exposure wavelength of photolithography devices to ever shorter wavelengths. Photolithography devices or lithography devices currently frequently use an ArF (argon fluoride) excimer laser as the light source, which emits at a wavelength of approximately 193 nm.

[0003] Particles from the environment can settle on photolithographic masks, photomasks, or simple masks and impair the imaging function of the masks. Particles are routinely removed from the surface by cleaning steps during mask manufacturing and during mask operation. In general, a particle can be present on a sample and negatively impact its function.

[0004] The decreasing structural dimensions of photolithographic masks are making cleaning processes increasingly difficult. Furthermore, the decreasing exposure wavelength makes increasingly smaller foreign or dirt particles adsorbed on the surface of the mask visible during the exposure process on a wafer.

[0005] The following are examples of some documents that investigate the movement of nanoparticles with the help of a nano- or micromanipulator, such as the measuring tip of a scanning probe microscope: HH Pieper: "Morphology and electric potential of pristine and gold covered surfaces with fluorite structure", Thesis, University of Osnabrück 2012; S. Darwich et al.: "Manipulation of gold colloidal nanoparticles with atomic force microscopy in dynamic mode: influence of particle - substrate chemistry and morphology, and operating conditions", Beilstein J. Nanotechnol., Vol. 2 (2011), pp. 85-98; HH Pieper et al.: "Morphology and nanostructure of CeO2(111) surfaces of single crystals and Si(111) supported ceria films", Phys. Chemistry Chemical Physics, Vol. 14, pp. 15361ff, 2013; E. Gallagher et al.: “EUVL mask repair: expanding options with nanomachining”, BACUS, Vol. 3, Issue 3 (2013), pp. 1-8; M. Martin et al.: „Manipulation of Ag nanoparticles utilizing noncontact atomic force microscopy“, Appl. Phys. Lett., Vol. 72, Nr. 11, Sept. 1998, S. 1505-1507; P.J. Durston et al.: „Manipulation of passivated gold clusters on graphite with the scanning tunneling microscope“, Appl. Phys. Lett., Vol. 72, Nr. 2, Jan. 1998, S. 176-178; R. Requicha: „Nanomanipulation with the atomic force microscope“, Nanotechnology Online, ISBN: 9783527628155; C. Baur et al.: „Nanoparticle manipulation by mechanical pushing: underlying phenomena and real-time monitoring“, Nanotechnology 9 (1998), S. 360-364; J.D. Beard et al.: „An atomic force microscope nanoscalpel for nanolithography and biological applications“, Nanotechnology 20 (2009), 445302, S. 1-10; US 6 812 460 B1; und US 8 696 818 B2.

[0006] The following documents cited as examples refer to the production of TEM samples using the in-situ lift-out method: J. Mayer et al.: “TEM sample preparation and FIB-induced damage”, MRS Bulletin, Vol. 32, May 2007, pp. 400-407; B. Myers: “TEM Sample Preparation with the FIB / SEM”, Nuance Center, Northwestern University - Evanston, 2009; M. Schaffer et al.: “Sample preparation for atomic STEM at low voltages by FIB”, Ultramicroscopy, Vol. 114, pp. 62-71 (2012); and US 2017 / 0 256 380 A1.

[0007] In the article “A novel AFM / STM / SEM system”, Rev. Sci. Instrum. 65 (9), pp. 2853-2954, Sept. 1994, the authors AV Ermakov and EL Garfunkel describe the use of an electron beam to detect oscillation of an AFM cantilever.

[0008] In the article "A Scanning Force Microscope Combined with a Scanning Electron Microscope for Multidimensional Data Analysis," Microscopy Microanalysis Microstructures, Vol. 8, pp. 393-402, 1997, Troyon et al. describe an atomic force microscope (SFM) for operation within a scanning electron microscope (SEM). This combined instrument enables conventional imaging with the SEM and the investigation of local topology and certain physical characteristics of the surface (friction, elasticity, etc.) with the SFM. The combination of the two microscopes is very attractive because they complement each other in terms of depth of field, lateral and vertical resolution, field of view, speed, and the ability to image insulating surfaces.

[0009] US patent US 4 440 475 A describes a combination of a scanning electron microscope and an optical microscope in which part of the optical light beam is guided in the column of the scanning electron microscope when the optical microscope is operating in the high-resolution mode.

[0010] US patent US 7 395 727 B2 describes a nano-manipulator that makes it possible to detect the placement of its tip on a sample surface.

[0011] Combining a scanning particle microscope and a scanning probe microscope in one device requires spatial separation of the two microscopes due to space constraints, making switching between the two microscopes complex and slow. If the two microscopes are located close to each other, a compromise in the performance of the two microscopes is necessary.

[0012] The present invention is therefore based on the problem of providing devices and a method which make it possible to improve the examination and / or processing of a sample. 3. Summary of the invention

[0013] The present invention is defined by the independent claim. Further embodiments are defined by the dependent claims. Embodiments described in the following description that are not covered by the claims are to be considered as examples that are helpful for understanding the invention.

[0014] According to one embodiment of the present invention, this problem is solved by the device according to claim 1. In a first embodiment, a device for examining and / or processing a sample comprises: (a) a scanning particle microscope for providing a beam of charged particles that can be directed onto a surface of the sample; and (b) a scanning probe microscope with a deflectable probe; (c) wherein a detection structure is attached to the deflectable probe.

[0015] By using a charged particle beam from a scanning particle microscope in combination with a detection structure attached to the probe of a scanning probe microscope, similar to a conventional light pointer system for determining the deflection of a scanning probe microscope probe, a device according to the invention can be constructed compactly. The interaction areas of the scanning probe microscope probe and the charged particle beam of the scanning particle microscope can overlap without having to compromise the performance of the two microscopes. Furthermore, it is possible to switch very quickly between an operating mode of the scanning particle microscope and an operating mode of the scanning probe microscope. In particular, the charged particle beam of the scanning particle microscope can be used to monitor the approach of the scanning probe microscope probe to a sample and / or the processing of the sample with the probe.

[0016] The scanning particle microscope may be configured to perform at least one element from the group: directing the charged particle beam toward the detection structure, performing a line scan of the charged particle beam across the detection structure, and scanning the charged particle beam across the detection structure.

[0017] The detection structure can have a material composition that differs from the material composition of the deflectable probe. A different material composition between the detection structure and the probe leads to a change in the secondary electron yield or a change in the backscattering coefficient for backscattered electrons, which enables detection of a deflection of the probe of the scanning probe microscope.

[0018] The detection structure can have a cylindrical, a conical, a rod-shaped or an n-cornered structure, where n ≥3.

[0019] The detection structure may be mounted on a front side of the probe and a measuring tip may be mounted on a back side of the probe.

[0020] The detection structure may comprise at least two separate, adjacent materials with different atomic numbers.

[0021] The at least two separate, adjacent materials of the detection structure may be separated along a longitudinal axis of the deflectable probe.

[0022] The detection structure may be designed to optimize emission of charged secondary electrons and / or backscattered electrons.

[0023] The detection structure may comprise a detection surface configured to optimize emission of charged secondary electrons and / or backscattered electrons.

[0024] The detection surface can be aligned so that it forms an angle of ±20° with the beam of charged particles when the probe is not deflected.

[0025] The detection surface can be designed to decouple a measurement signal generated by the detection surface from an impact surface of the charged particle beam onto the detection surface over a distance of at least 10, preferably at least 50, more preferably at least 100, and most preferably at least 500 beam diameters of the charged particle beam.

[0026] A detection surface fulfills at least two functions. Firstly, it optimizes the measurement signal generated by the charged particle beam. Secondly, the detection surface facilitates the alignment of the charged particle beam onto the probe. This is achieved, on the one hand, by deliberately defocusing the charged particle beam with respect to the detection surface and, on the other hand, by an alignment tolerance of the charged particle beam relative to the longitudinal axis of the probe. In the first embodiment described here, the charged particle beam is preferably directed as a fixed beam onto the detection surface of the probe.

[0027] The beam diameter of the charged particle beam is defined as the width at which the intensity has dropped to half of the maximum intensity, i.e. the FWHM (Full Width Half Maximum) width of the intensity distribution.

[0028] The detection area may comprise a width of 90%, preferably 50%, more preferably 30%, and most preferably 10% of the probe.

[0029] Similar to a focused light beam of a light pointer system, a charged particle beam in the described first embodiment utilizes a significant percentage of the detection area.

[0030] The detection area may have a size that allows detection of the deflection of the probe with a beam having a cross-sectional area of ​​more than 10 nm 2 , preferably 50 nm 2 , more preferably 100 nm 2 , and most preferably more than 500 nm 2 has.

[0031] The cross-sectional area of ​​a charged particle beam refers to the area of ​​the full width at half maximum (FWHM) of its intensity profile.

[0032] This embodiment allows for intentional defocusing of the charged particle beam with respect to the detection surface of the probe. This reduces the spatial dependence of the measurement signal induced by the charged particle beam on the detection surface.

[0033] The detection surface can be rectangular. Furthermore, the detection surface can be arranged at an angle of 60° to 90°, preferably 70° to 90°, more preferably 80° to 90°, and most preferably 85° to 90° relative to a surface of the probe.

[0034] By designing the detection surface in this way, an optical light pointer system of a conventional scanning probe microscope can be approximately simulated using a charged particle beam and a correspondingly arranged detector.

[0035] The detection structure and the probe can be manufactured as a single piece. However, it is also possible to manufacture the probe and the detection structure separately and then attach the detection structure to the probe in a second step, for example, by gluing. It is also possible to provide a recess in the probe into which the detection structure can be inserted.

[0036] The charged particle beam and a surface of the probe may encompass an angular range of 60° to 120°, preferably 70° to 110°, more preferably 80° to 100°, and most preferably 85° to 95°.

[0037] By arranging the probe essentially horizontally, the sample can also be positioned horizontally. This allows large samples, such as wafers or photolithographic masks, to be easily fixed and precisely positioned relative to a charged particle beam of a scanning particle microscope and / or a probe of a scanning probe microscope.

[0038] The term “essentially” here, as elsewhere in this application, means an indication of a measurand within its error tolerances when the measurand is measured using measuring instruments according to the prior art.

[0039] The detection structure can have a material composition optimized for the emission of secondary electrons. Materials with a high atomic number, such as gold, are advantageous for this purpose.

[0040] The detection surface may have a curvature. The curvature of the detection surface may be designed to linearize a measurement signal of the probe's deflection.

[0041] The deflection of a probe typically leads to a strong, particularly nonlinear, variation in the measurement signal of the detection surface. It is possible to compensate for this nonlinearity by appropriately designing a control system for probe oscillation. However, it is also possible to select the surface shape or curvature of the detection surface such that a nearly linear relationship exists between the deflection of the probe and the measurement signal generated by the detection surface arranged on the probe. The translational invariance of the charged particle beam across the detection surface is abandoned in this embodiment.

[0042] The scanning particle microscope can be designed to direct a fixed beam of charged particles onto the detection surface.

[0043] The detection structure may comprise at least one planar element and a normal vector of the planar element may be directed substantially parallel or antiparallel to the longitudinal axis of the deflectable probe.

[0044] The at least one planar element may comprise a rectangular structure that extends across a large portion of the probe's width. The large portion of the probe's width refers to a portion of the probe's width that is greater than 50% of the probe's width.

[0045] The detection structure can be attached to the back of the deflectable probe. A measuring tip can be attached to the detection structure.

[0046] The detection structure can comprise at least two planar elements arranged along the longitudinal axis of the deflectable probe. The at least two planar elements can be arranged parallel to each other. The at least two planar elements can have different heights. The at least two planar elements can comprise a rectangular structure.

[0047] The scanning particle microscope may be configured to scan the beam of charged particles along the longitudinal axis of the deflectable probe.

[0048] The detection structure and the measuring tip can be mounted on the same side of the deflectable probe. The detection structure and the measuring tip can be mounted on the back of the deflectable probe. The measuring tip can be attached to the detection structure.

[0049] The detection structure may comprise at least one marker.

[0050] The at least one marking can be designed to cause a change in position in an image of the scanning particle microscope upon a deflection of the probe, which makes it possible to determine the deflection of the probe.

[0051] In the first exemplary embodiment of a detection structure in the form of a detection surface described above, a defocused charged particle beam is typically fixedly positioned on the detection surface. In the second exemplary embodiment, a focused electron beam is scanned over a region of the probe in which the at least one marking is arranged on the probe. The deflection of the probe is detected via a lateral offset of the at least one marking in the image of the marking. It is an advantage of this exemplary embodiment of the detection structure that a detector within a column of the scanning particle microscope (i.e., an in-lens detector) can be used to detect the deflection of the probe. This enables a compact design of a device as described above. To analyze the sample and / or the probe or the deflection of the probe, the scanning particle microscope operates in scan mode.This means that the scanning particle microscope settings need only be changed slightly between scanning a sample or feature for photolithography and scanning the probe. This allows for rapid switching between scanning the feature and the probe.

[0052] The at least one marker may be formed as a tip and may be arranged on a surface of the probe onto which the beam of charged particles impinges on the probe. The at least one marker may comprise a material that is different from the material of the probe. In particular, the marker may comprise a material that optimizes a material contrast between the probe and the at least one marker.

[0053] As a result, imaging the marking results in not only a topology contrast but also a material contrast when imaging the marking or the area of ​​the probe that includes the marking.

[0054] The detection structure may comprise at least two markers of different heights. The at least two markers may be arranged on a line that runs substantially perpendicular to the longitudinal axis of the probe.

[0055] Two markers of different heights arranged on the probe allow the lateral displacement of the probe during its deflection to be determined via a differential measurement, thereby increasing the accuracy with which the probe deflection can be determined. In particular, a detection structure designed as two markers can avoid performing a reference measurement.

[0056] A device according to the invention may further comprise an optical light pointer system and the detection structure may comprise a reflection structure designed to reflect optical radiation of the optical light pointer system and the reflection structure may be arranged at an angle different from zero relative to a front side of the deflectable probe.

[0057] This embodiment enables the simultaneous or sequential examination and / or processing of a sample with a charged particle beam and the probe of a scanning probe microscope in a common or at least partially overlapping interaction area of ​​the scanning particle microscope and the scanning probe microscope with the sample. Furthermore, this embodiment allows a first tool to process the sample and the second tool to examine or monitor the processing process.

[0058] The reflective structure may comprise a mirror. The reflective structure may comprise a metal or a metallic coating layer. The reflective structure may comprise an angle between a front side of the probe in the range of 70° to 100°, preferably 75° to 95°, more preferably 80° to 90°, and most preferably 83° to 87°. The reflective structure may comprise an imaging function.

[0059] An interaction region of the scanning probe microscope and the interaction region of the scanning particle microscope can at least partially overlap.

[0060] Imaging the marker with the scanning particle microscope can be performed by scanning the beam of charged particles at a first frequency, wherein the first frequency is at least a factor of 5, preferably a factor of 10, more preferably a factor of 30, and most preferably a factor of 100 higher than an oscillation frequency of the probe. However, the first frequency can also be lower than the oscillation frequency of the probe.

[0061] A device according to the invention can further comprise a signal processing unit which is designed to image high oscillation frequencies of the probe by utilizing the stroboscopic effect.

[0062] The probe may have an aperture configured so that the charged particle beam can be directed onto the sample through the aperture. Furthermore, the aperture of the probe may be configured so that the charged particle beam can scan the sample through the aperture for imaging.

[0063] The size of the aperture is chosen so that the scanning range of the charged particle beam is not unnecessarily restricted. On the other hand, the width of the aperture, which runs perpendicular to the probe's longitudinal axis, is chosen so that the probe's mechanical stability is not compromised.

[0064] The opening can have any shape. Symmetrical openings, such as circular, triangular, rectangular, or square openings, are preferred.

[0065] This configuration enables a very good overlap between the interaction areas of the probe and the charged particle beam with a sample. In particular, this configuration can be used to determine, for example, the position of a particle present on a sample relative to the interaction area of ​​the probe with the particle. This is a significant advantage when manipulating the particle using the probe. Furthermore, with this embodiment of the probe, it is possible to switch very quickly and easily between examining the sample and examining the probe using the charged particle beam of the scanning particle microscope.

[0066] The probe can be designed to be electrically conductive to shield and / or compensate for electrostatic charging of the sample.

[0067] If electrically insulating samples, such as photolithographic masks, are examined and / or processed with a charged particle beam, the sample can become electrostatically charged. A shielding device in the form of a close-meshed net is often attached to the exit of the particle optics of a scanning particle microscope to protect a sample, such as a photolithographic mask, from electrostatic charging. If a probe of a scanning probe microscope is placed beneath the exit aperture of a scanning particle microscope, there is no space left for the scanning particle microscope's shielding device. By making the probe of the scanning probe microscope conductive, the probe can also partially assume the function of a shielding element. This is especially true if the probe has an opening for the passage of the charged particle beam.

[0068] If, when the probe is approached to a sample surface, it is determined that the sample has an electrostatic charge, the electrostatic charge of a sample can be compensated by applying a voltage to an electrically conductive probe, so that a safe examination of the sample surface using the probe is possible, even if the sample has an electrostatic charge.

[0069] The probe may be connected to a piezoelectric quadmorph piezo actuator configured to deflect the probe.

[0070] Tubular piezo actuators are often used to position the probe of a scanning probe microscope on a sample surface. However, this embodiment of a piezo actuator is unsuitable for a scanning probe microscope of a device according to the invention, since the exit aperture of the charged particle beam of the scanning particle microscope is typically at best a few millimeters away from the sample surface. A piezo actuator designed as a quadmorph actuator element optimally utilizes the limited space between the exit aperture of the charged particle beam and the sample without having to resort to mechanically unstable alternative solutions.

[0071] A device according to the invention may comprise a control unit configured to carry out a coordinate transformation between a coordinate system of the element for photolithography and the coordinate system of the probe in a time interval of < 50 µs, preferably < 10 µs, more preferably < 1 µs, and most preferably < 0.1 µs.

[0072] Scanning probe microscopes are typically designed so that the coordinate system of the piezo actuator and the coordinate system of the sample or the sample stage on which the sample is arranged are aligned with each other. However, due to the space limitations already mentioned when combining a scanning particle microscope and a scanning probe microscope, this is often not possible with an in-situ configuration of the two microscopes. The control unit of a device according to the invention has the ability to perform coordinate transformations virtually in real time, i.e., with minimal delay. This capability enables the device to respond quickly to a detected deflection of the probe. A limitation of the throughput of a device according to the invention, which is caused by its configuration, can be largely avoided.A fast coordinate transformation can be carried out in the control unit, for example in the form of an FPGA (Field Programmable Gate Array) or an ASIC (Application Specific Integrated Circuit).

[0073] The control unit can further be designed to carry out the method steps of the method according to the invention.

[0074] In a second embodiment, an apparatus for examining and / or processing a sample comprises: (a) a scanning particle microscope for providing a beam of charged particles that can be directed onto a surface of the sample; and (b) a scanning probe microscope with a deflectable probe and a light pointing system for detecting a deflection of the probe; (c) wherein the light pointing system is guided at least partially within a column of the scanning particle microscope.

[0075] This embodiment of a device according to the invention allows for a very compact realization of a combination of a scanning particle microscope and a scanning probe microscope, whose interaction areas overlap with a sample or an element for photolithography. Despite the compact design of the device according to the invention, the deflection of the scanning probe microscope probe can be detected using a proven light pointer system.

[0076] The scanning particle microscope may have at least one lens for the light pointing system at its exit aperture for the charged particle beam, with an opening for the passage of the charged particle beam. The lens for the light pointing system may be designed as an annular lens.

[0077] The scanning particle microscope may comprise a deflection mirror and a window of the light-pointing system. The deflection mirror may deflect optical radiation from the light-pointing system by substantially 90°. The deflection mirror may have an opening for the passage of the beam of charged particles.

[0078] This makes it possible to arrange the light source, which can be realized by a laser, for example, and the photodetector, which can be implemented in the form of a four-quadrant photodiode, for example, outside the scanning particle microscope.

[0079] The optical elements of the light pointer system arranged in the scanning particle microscope may have an optically substantially transparent and electrically conductive coating. The optically transparent and electrically conductive coating may comprise an indium tin oxide (ITO) layer.

[0080] By applying a conductive coating to the optical elements, i.e. the lenses and mirrors in the scanning particle microscope, electrostatic charging of the optical components by scattered electrons can be essentially prevented.

[0081] The device according to the invention can comprise a light source arranged outside the scanning particle microscope and configured to deflect the probe, wherein the optical intensity of the light source is partially guided within the scanning particle microscope. The light source for deflecting the probe can utilize the optical elements of the light pointing system in the scanning particle microscope. The light source can comprise a laser system. The light source can use a different wavelength range than the light source of the light pointing system.

[0082] By using the same optical elements within the scanning particle microscope for excitation of the deflection and detection of the deflection, a device according to the invention can be constructed compactly.

[0083] A device according to the invention can further comprise at least one first container for storing at least one precursor gas and at least one second container for storing at least one etching gas. Furthermore, a device according to the invention can comprise at least one third container for storing an additive gas. The additive gas can be admixed with the precursor gas or the etching gas as needed to support a local deposition reaction on the sample and / or the probe or a local etching reaction on the sample and / or the probe.

[0084] The gases stored in the containers enable a device according to the invention not only to examine a sample, for example a photolithographic mask and / or a wafer, but also to process it.

[0085] A device according to the invention can be configured to deposit a sacrificial tip on the probe of the scanning probe microscope. The sacrificial tip can be deposited on the probe of the scanning probe microscope using the beam of charged particles of the scanning particle microscope and one or more precursor gases stored in the first container.

[0086] To deposit the sacrificial tip, the charged particle beam can pass through the probe. The scanning probe microscope can also be configured to rotate the probe around its longitudinal axis.

[0087] The devices described above can further be configured to connect a particle present on the sample to the probe. Connecting the particle to the probe can be achieved by depositing material onto the probe and / or the particle using a deposition process induced by the beam of charged particles on the precursor gas.

[0088] To deposit the bonding material, the charged particle beam can be directed through the probe. Furthermore, to deposit the bonding material, the charged particle beam can be directed through the probe's opening.

[0089] Furthermore, the devices according to the invention can be configured to separate a particle connected to the probe from the probe. Separating the particle from the probe can be achieved by performing a local EBIE (Electron Beam Induced Etching) process.

[0090] By connecting a particle to the probe of a scanning probe microscope, the particle can be reliably removed even from hard-to-reach areas of a sample. In hard-to-reach areas, a sample cleaning process often cannot reach a particle.

[0091] The connecting material can form a partially detachable or a non-detachable connection between the probe and the particle.

[0092] It is advantageous if the connecting material forms a partially detachable connection between the probe or the sacrificial tip of the probe and the particle. In this case, the probe can be used to successively remove a number of particles. However, it is also possible for the connecting material to create a non-detachable connection between the probe and the particle. In this case, the probe loaded with a particle is replaced with a new one.

[0093] A precursor gas for depositing a bonding material onto the probe and / or onto the particle may comprise at least one element from the group: ethene (C2H4), styrene (C8H8), pyrene (C 16 H 10 ), hexadecane (C 16 H 34 ), liquid paraphines, formic acid (CH2O2), propionic acid (C3H6O2), and methyl methacrylate (C5H8O2).

[0094] It is advantageous if the bonding material has a high carbon content. A high carbon content of the bonding material allows for easy separation of the particle removed from the sample from the probe of the scanning probe microscope. Furthermore, bonding materials that predominantly or at least partially comprise carbon form volatile compounds when the bond between the probe and the particle is severed in an EBIE process, which can be easily removed from the reaction zone of the local process.

[0095] The material for connecting the probe and particle can be electrically conductive. A precursor gas for depositing an electrically conductive connecting material can comprise a metal carbonyl. A metal carbonyl can comprise at least one element from the group: chromium hexacarbonyl (Cr(CO)6), molybdenum hexacarbonyl (Mo(CO)6), tungsten hexacarbonyl (W(CO)6), dicobalt octocarbonyl (Co2(CO)8), triruthenium dodecarbonyl (Ru3(CO)) 12 ), and iron pentacarbonyl (Fe(CO)5).

[0096] An etching gas may include water vapor, hydrogen peroxide, xenon difluoride (XeF2), xenon dichloride (XeCl2), xenon tetrachloride (XeCl4), XNO, XNO2, XONO2, X2O, XO2, X2O2, X2O4 and X2O6, where X is a halogen, and nitrosyl chloride (NOCl).

[0097] The probe can have a measuring tip for examining the sample. The devices according to the invention can be designed to deposit a sacrificial tip onto the probe. Furthermore, the described devices can be designed to deposit the sacrificial tip onto the measuring tip of the probe.

[0098] For deposition of a sacrificial tip on the probe, it is advantageous for the tip of the sacrificial tip and the charged particle beam to be collinear. Therefore, it is advantageous for the probe to be rotatable about its longitudinal axis. To depose the sacrificial tip, the parameters of the charged particle beam typically need to be adjusted.

[0099] The sacrificial tip may have a length in the range of 50 nm to 10 µm, preferably 100 nm to 5 µm, more preferably 200 nm to 2 µm, and most preferably 500 nm to 1 µm. The sacrificial tip may have a cylindrical shape with a diameter in the range of 5 nm to 1000 nm, preferably 10 nm to 500 nm, more preferably 15 nm to 200 nm, and most preferably 20 nm to 100 nm.

[0100] The sacrificial tip of the probe may be carbon-based. A precursor gas for deposition of sacrificial tips may comprise at least one element of: ethene (C2H4), styrene (C8H8), pyrene (C 16 H 10 ), hexadecane (C 16 H 34 ), liquid paraphines, formic acid (CH2O2), propionic acid (C3H6O2), and methyl methacrylate (C3H8O2)

[0101] A sacrificial tip may be electrically conductive. A precursor gas for depositing an electrically conductive sacrificial tip may comprise a metal carbonyl. A metal carbonyl may comprise at least one element from the group: chromium hexacarbonyl (Cr(CO)6), molybdenum hexacarbonyl (Mo(CO)6), tungsten hexacarbonyl (W(CO)6), dicobalt octocarbonyl (Co2(CO)8), triruthenium dodecarbonyl (Ru3(CO) 12 ), and iron pentacarbonyl (Fe(CO)5).

[0102] The probe may comprise a cantilever with a measuring tip and a mounting area attached to the end of the cantilever opposite the measuring tip. The probe may be connected to a piezo actuator of the scanning probe microscope via its mounting area.

[0103] The charged particle beam may comprise at least one element from the group: an electron beam and an ion beam.

[0104] An electron beam used to probe a sample essentially does not damage a sample, such as a photolithography element. Furthermore, an electron beam-induced deposition process for depositing a sacrificial tip and / or bonding the sacrificial tip to a particle has the advantage of allowing precise localization of the deposition reaction. Furthermore, using an EBIE process to remove a particle from the probe or sacrificial tip can minimize damage to the probe or sacrificial tip.

[0105] The particle may have a diameter of 5 nm to 10 µm, preferably 10 nm to 5 µm, more preferably 15 nm to 20 µm, and most preferably 20 nm to 1 µm.

[0106] The sacrificial tip of the probe positioned to receive a particle may have a distance from the particle to be removed of 0 nm to 2000 nm, preferably 0 nm to 500 nm, more preferably 0 nm to 100 nm, and most preferably 0 nm to 50 nm.

[0107] The sample may comprise a photolithography element. The photolithography element may comprise at least one element from the group: a photolithographic mask, a nanoimprint lithography template, and a wafer. The photolithography mask may comprise a reflective or a transmissive mask. Furthermore, the photolithography mask may comprise any desired mask type.

[0108] The devices may comprise one or more displacement elements designed to perform a relative movement between the probe and the sample in three spatial directions.

[0109] Devices according to the invention may comprise a modified scanning electron microscope and at least one atomic force microscope.

[0110] The devices according to the invention may further comprise a detector for detecting X-ray radiation.

[0111] A particle on a sample, such as a photomask, can only be examined to a very limited extent. Firstly, particles are often located in hard-to-reach areas of the sample. Secondly, the on-site analysis options are very limited, as analyzing the particle should not alter the surrounding area of ​​the sample. Secondly, the analysis of the particle should not be distorted by the sample surrounding it. If particles are removed from the sample using a cleaning process, they are usually lost for analysis of their material composition.

[0112] In combination with the charged particle beam that excites the particle removed from the sample, the detector can be used to determine the material composition of the particle.

[0113] In one embodiment, the method for moving a particle on a sample comprises the following steps: (a) positioning a probe movable relative to the sample in a proximity of the particle to be moved; (b) using a charged particle beam of a scanning particle microscope, a light pointing system guided at least in part within the scanning particle microscope, or a light pointing system comprising a reflection structure arranged on a probe and arranged at a non-zero angle on a top surface of the probe to determine a deflection of the probe during positioning; and (c) moving the particle by moving the probe relative to the sample.

[0114] A charged particle beam from a scanning particle microscope can be used to examine a sample. A particle identified by the charged particle beam is then moved using the probe of a scanning probe microscope. This movement should release the particle from its anchorage or entanglement on the sample so that it can be removed from the sample in a cleaning process. It is also possible to move the particle with the probe to a location on the sample where the particle does not impair the function of the sample, for example, the element for photolithography. In a photomask, this could be, for example, the non-active region of a photomask or an absorbing pattern element.

[0115] To move the identified particle, the probe must be positioned on or near the particle. Moving the probe of a scanning probe microscope (SPM) closer to a sample surface is a risky process, as it can damage the sample and / or the probe. Therefore, monitoring this process is necessary.By using the charged particle beam of the scanning particle microscope that detected the particle, by using a light pointer system that at least partially guides the optical radiation within the scanning particle microscope, or by using a light pointer system that has a reflection structure on the probe of the scanning probe microscope that has a non-zero angle to the surface of the probe, the method according to the invention requires minimal effort for aligning the probe with respect to the identified particle and, on the other hand, enables the probe to be safely approached to a sample or a particle to be moved. Furthermore, the use of a light pointer system enables the forces exerted on a probe to be determined and thus controlled.

[0116] Positioning the probe relative to the sample may include determining a force acting between the probe and the sample.

[0117] By measuring the interaction between the probe and the sample, damage to the probe and / or the sample can be avoided when the probe approaches the surface of the sample.

[0118] The method according to the invention may further comprise the step of imaging the sample and / or the particle with the particle beam of the scanning particle microscope.

[0119] The described method may further comprise the step of switching between determining the deflection of the probe and imaging the sample.

[0120] A significant advantage of the described method is that the combination of a scanning particle microscope and a scanning probe microscope, whose interaction areas with a sample overlap, enables rapid switching between the operating modes of the individual microscopes. Thus, in addition to the approach process of the probe to a sample, the movement of a particle on a sample surface can also be monitored. This can at least partially remove the trial-and-error nature of the movement of a particle on a sample.

[0121] The method according to the invention may further comprise the step of connecting the probe to the particle. Connecting the probe to the particle may comprise the step of depositing material onto the probe and / or the particle.

[0122] In addition to moving a particle using the probe of a scanning probe microscope, it is also possible to bond the particle to the probe by depositing material on or between these two elements. After establishing a stable mechanical connection between the probe and the particle, the particle can be moved in a defined manner by performing a relative movement between the probe and the sample. In particular, the particle can be removed from the sample.

[0123] The method according to the invention may further comprise the step of analyzing the particle using the charged particle beam and an energy-dispersive detector for electromagnetic radiation. The charged particle beam may excite the particle, and the X-rays emitted by the particle may be analyzed by an energy-dispersive X-ray detector.

[0124] One advantage of connecting the probe to a particle is that the particle coupled to the probe can be subjected to an analysis of its material composition, which is unaffected by the sample environment. This makes it possible to at least partially determine the source(s) generating the particles. Particle analysis thus represents an important step toward eliminating these particle sources.

[0125] The described method may further comprise the step of removing the particle from the probe. Removing the particle from the probe may further comprise performing a local etching process induced by a charged particle beam.

[0126] By removing the particle from the probe, a probe loaded with a particle does not need to be replaced, but can be used to move or remove additional particles.

[0127] Determining the deflection of the probe may comprise: positioning the charged particle beam onto a detection surface mounted on the probe.

[0128] The described method may further comprise the step of: adjusting a cross-sectional area of ​​the charged particle beam so that the beam has a cross-sectional area of ​​more than 10 nm 2 , preferably 20 nm 2 , more preferably 50 nm 2 , and most preferably more than 100 nm 2 has.

[0129] As already explained above, in a first embodiment of the method according to the invention, the charged particle beam is intentionally defocused with respect to the detection surface mounted on the probe, thus reducing the spatial dependence of the measurement signal induced by the charged particle beam from the probe. Furthermore, in this embodiment, the charged particle beam is not scanned across the probe, but rather focused on a fixed position within the surface interaction area of ​​the probe.

[0130] Determining the deflection of the probe may comprise scanning the charged particle beam across the probe. In particular, determining the deflection of the probe may comprise scanning the charged particle beam across a region of the probe that has at least one marking.

[0131] The method according to the invention may further comprise the step of synchronizing the scanning of the charged particle beam via the probe with an oscillation of the probe.

[0132] The described method may further comprise the step of: performing a coordinate transformation between a coordinate system of the probe and the coordinate system of the sample in a time interval < 50 µs, preferably < 10 µs, more preferably < 1 µs, and most preferably < 0.1 µs.

[0133] The method according to the invention may further comprise the step of detecting X-rays originating from a particle with an energy-dispersive X-ray detector. 4. Description of the drawings

[0134] In the following detailed description, currently preferred embodiments of the invention are described with reference to the drawings, wherein Fig. 1 schematically shows a probe with a cantilever, a measuring tip and a mounting area; Fig. 2 schematically shows a section through a first embodiment with a probe with a detection surface and a detection structure; Fig. 3 shows the secondary electron yield as a function of the angle between an exciting electron beam and a detector; Fig. 4 in the upper part of the image (diagram 450) illustrates a schematic section through a probe having a detection surface oscillating over a sample surface, and in the lower part of the image (diagram 490) illustrates extreme positions of the detection surface during an oscillation of the probe of the upper part of the image as well as the associated secondary electron signal; Fig. 5 in the upper part of the diagram (diagram 550) the upper part of the Fig. 4, wherein the probe comprises a second embodiment of a detection structure and symbolizes in the lower part of the image (diagram 590) extreme positions of the detection structure during an oscillation of the probe of the upper part of the image as well as the associated backscattered electrons; Fig. 6 shows the secondary electron yield δ and the backscattering coefficient η as a function of the atomic number; Fig. Figure 7 schematically presents the time course of an approach process of a probe to a sample surface together with the associated secondary electron signal; Fig. Figure 8 shows a schematic section through a probe above a sample, the cantilever of the probe having a detection surface and an opening for the passage of a charged particle beam; Fig. 9 presents a schematic section through a probe above a sample, wherein the cantilever of the probe has a second embodiment of a detection structure and an opening for the passage of a charged particle beam; Fig. 10 shows a schematic section through a probe having a curved detection surface; Fig. 11 shows in the left part of the image a schematic section through a probe having a further embodiment of a detection structure in the form of a marker, and in the right part of the image illustrates the lateral offset of the marker in the image of the probe during its deflection; Fig. 12 the Fig. 11 is repeated, wherein the detection structure is designed in the form of two markers which are of different heights; Fig. 13 in the lower part of the image shows a further embodiment of a detection structure in the form of two planar elements which are arranged transversely to the longitudinal axis at a distance from one another along the longitudinal axis of the probe, and in the upper part of the image presents the measurement signal in a line scan of a charged particle beam over the two planar elements along the longitudinal axis of the probe; Fig. 14 the Fig. 13 reproduced at the time when the measuring tip of the probe touches the surface of the probe; Fig. 15 schematically shows side and front views of various embodiments of detection structures in the form of rectangular elements; Fig. 16 schematically illustrates side and front views of further embodiments of detection structures in combination with various measuring tips of probes: Fig. 17 illustrates a section through a signal processing unit for a scanning particle microscope and its connections to the probe drive of a scanning probe microscope and to the generator of the scanning signal for the charged particle beam of the scanning particle microscope; Fig. 18 schematically shows a nanomanipulator whose coordinate system is rotated relative to the coordinate system of the sample stage; Fig. 19 schematically shows the use of a quadmorph piezo actuator for positioning and deflecting a probe between an exit aperture of the column of a scanning electron microscope and a sample; Fig. Figure 20 shows a schematic section through a sacrificial tip attached to a measuring tip of a probe and positioned under the exit opening of the column of a scanning electron microscope in the vicinity of a particle present on a photomask; Fig. 21 schematically shows the connection of the particle of Fig. 20 with the sacrificial tip by performing a local deposition process; Fig. 22 schematically illustrates the process of removing the particle associated with the sacrificial tip from the photomask; Fig. 23 schematically illustrates the separation of the particle from the sacrificial tip by performing a local etching process; Fig. 24 shows a section through a combination of a scanning electron microscope and an atomic force microscope or an atomic force microscope; Fig. 25 shows a section through a combination of a scanning electron microscope and an atomic force microscope in which the radiation of a light pointer system for detecting the deflection of a probe of the atomic force microscope is partially guided in the column of the scanning electron microscope; Fig. 26 presents a schematic section through a combination of a scanning particle microscope, a scanning probe microscope and a light pointer system, wherein the light pointer system has a reflection structure arranged on the probe, which is arranged at an angle other than zero on the probe of the scanning probe microscope; Fig. 27 presents a section through a combination of a scanning electron microscope and a nanomanipulator in which the column of the scanning electron microscope is arranged rotated relative to the sample normal; Fig. 28 a flow diagram of a processing process of a sample with one of the devices of the Fig. 24 to 26; and Fig. 29 shows a flowchart of the method according to the invention. 5. Detailed description of preferred embodiments

[0135] In the following, currently preferred embodiments of devices according to the invention and of a method according to the invention for examining and / or processing a sample are explained in more detail using the example of a photolithographic mask. However, the use of the devices according to the invention and the method according to the invention is not limited to the examples discussed below. Rather, they can be used generally for examining and / or processing an element for photolithography. In particular, the devices and methods described in this application can be used for analyzing and / or modifying highly sensitive samples with structures in the nanometer range. For example, the devices according to the invention and the method according to the invention could be used for examining and / or modifying biological samples.

[0136] The Fig. 1 schematically presents an example of a probe 100 for a scanning probe microscope. The exemplary probe 100 comprises a cantilever 110 or a lever arm 110. The cantilever 110 is referred to below as a cantilever 110, as is common in the art. The cantilever 110 of the probe 100 has a measuring tip 120 at one end (the free end). The measuring tip 120 is attached to a rear side 125 of the cantilever 110 of the probe 100. The side opposite the measuring tip 120 is referred to below as the front side 115 or top side 115 of the probe 110. In the example of the Fig. 1, the measuring tip 120 has an elongated, thin tip with a small radius of curvature, which is designed for analyzing a sample surface, such as a mask or a wafer. At the end opposite the measuring tip 120 or the free end, the cantilever 110 of the probe 100 has a mounting area 130. Using the mounting area 130, the probe 100 can be connected to a piezo actuator that is built into a measuring head of a scanning probe microscope (in the Fig. 1 not shown).

[0137] By moving the mounting area 130, the cantilever 110 of the probe 100 can be moved. In particular, the cantilever 110 can be excited to oscillate. For this purpose, as already described above, the mounting area 130 of the probe 100 can be connected to a piezo actuator, which can excite the cantilever 110 to oscillate, for example, at or near the resonance frequency of the probe 100 (in the Fig. 1 not shown). An oscillation mode of the cantilever 110 can be used while the measuring tip 120 is approaching the surface of a sample and / or for scanning a sample in the region of a particle.

[0138] In the following, the term "sample" encompasses elements that have structural elements with dimensions in the micrometer and / or nanometer range on at least one of their surfaces. The structural elements include both intended structures and structural elements that should not be present on a sample, such as particles. A sample can, in particular, comprise elements for photolithography. Elements for photolithography include photolithographic masks, wafers, and / or templates for nanoimprint technology.

[0139] The cantilever 110 may have a bimorph structure, ie comprise two superimposed interconnected layers having different thermal expansion (in the Fig. 1 not shown). By depositing energy into the cantilever 110, it can be bent towards or away from the sample surface, depending on the embodiment. Energy can be introduced locally into the cantilever 110, for example, by irradiating it with a laser beam. Furthermore, it is possible to attach a resistor to the cantilever 110 in order to bend it towards or away from the sample surface by local heating (in the Fig. 1 not shown).

[0140] As already explained above, the probe 100 can be connected via the fastening area 130 to an actuator, for example in the form of a piezo actuator (in the Fig. 1 (not shown). The piezo actuator can deflect the cantilever 110 of the probe 100. In particular, the piezo actuator can move the measuring tip 120 toward a sample surface. Furthermore, the piezo actuator can excite the cantilever 110 of the probe 100 to oscillate. Preferably, the piezo actuator excites the cantilever 110 at or near a resonant frequency of the probe 100. The cantilever 110 can comprise a resistive element used to bend the cantilever 110 toward or away from the surface of the mask. Furthermore, an additional light source, whose light beam is partially guided within the scanning particle microscope, can be used to deflect the probe 100.

[0141] Furthermore, it is possible to deflect the cantilever 110 based on electrostatic forces and / or the inverse piezoelectric effect. Furthermore, magnetic fields (magnetostriction) can be used to bend the cantilever 110 toward or away from the sample surface.

[0142] The surface of the cantilever 110 of the probe 100, which is opposite the measuring tip 120, can be provided with a thin metallic reflective layer in order to increase the reflectivity of the surface of the cantilever 110 for a light beam acting as a light pointer (in the Fig. 1 not shown).

[0143] The Fig. Figure 2 shows, in the upper part of the image, a schematic section through a probe 200 with a cantilever 110 and a measuring tip 220 that is inclined relative to the measuring tip 120 of the probe 100. With this arrangement of the measuring tip 220, a charged particle beam can scan the tip 225 of the measuring tip 220. In particular, the charged particle beam can determine contact of the measuring tip 220 with a sample surface and / or a distance to a particle present on the sample surface.

[0144] On the front side 115 of the probe 200, which is opposite the back side 125 on which the measuring tip 120 is arranged, a detection structure 230 in the form of a detection surface 230 is attached. The detection surface 230 has, in the Fig. 2, the detection surface 230 has an angle of approximately 40° relative to the front surface 115 of the probe 200, which is opposite the rear surface 125 of the probe 200, which has the measuring tip 220. In an alternative embodiment, the detection surface 230 has an angle in the range of 80° to 88° relative to the front surface 115 of the probe 200.

[0145] The probe 200 and the detection surface 230 can be formed as a single piece. However, it is advantageous to manufacture the detection surface 230 from a material whose emissivity is optimized for secondary charged particles in the forward direction. Materials whose atoms have a high atomic number, such as tungsten, osmium, indium, platinum, or gold, are suitable for this purpose.

[0146] Diagram 250 of the Fig. Figure 2 shows an enlarged view of a charged particle beam 240 impinging on the detection surface 230 of the probe 200. A beam of charged particles 240 can comprise an electron beam and / or an ion beam. In the following considerations, without loss of generality, a charged particle beam 240 is restricted to an electron beam 240 and secondary charged particles 260 to secondary electrons 260 for reasons of simplicity. The following considerations can be carried out analogously for an ion beam impinging on the detection surface 230.

[0147] By interacting with the material of the detection surface 230, the electron beam 240 generates secondary electrons. The secondary electrons include scattered or backscattered electrons and secondary electrons (SE). The generated secondary electrons exhibit a broad energy spectrum. Typically, the spectrum of the secondary electrons has a peak in the range of a few electron volts (eV), followed by a broad background. For reasons of energy conservation, the maximum energy of a secondary electron is limited by the kinetic energy of the electron beam 240 impinging on the detection surface 230.

[0148] Secondary electrons are all secondary electrons whose kinetic energy is < 50 eV after leaving the detection surface. Their most probable energy lies in the energy range of 2 to 5 eV. Due to their low kinetic energy and thus their short range in the material of the detection surface 230, the SE originate from a thin surface layer with a thickness of 5 nm to 50 nm of the detection surface 230. The SE arise from the inelastic interaction of the electron beam 240 with the atomic shell of the material of the detection surface 230.

[0149] Generated secondary electrons with greater kinetic energy are called backscattered secondary electrons (BSE) or simply backscattered electrons (RE). The broad spectrum of BSE consists of electrons from the electron beam 240 that have lost part of their kinetic energy as a result of numerous scattering processes in the material of the detection surface 230. The diameter of the exit surface from the detection surface 230, as well as the penetration depth of the BSE, depend on the material of the detection surface 230 and the energy of the electron beam 240. Both are on the order of micrometers.

[0150] The following considerations refer to SE, ie secondary electrons with a kinetic energy < 50 eV. As shown in diagram 250 of the Fig. As illustrated in Figure 2, SEs can be emitted from the detection surface 230 in both the forward and backward directions. The SEs 260 exit the detection surface 230 in the forward direction when emitted from the surface of the detection surface 230 impinged upon by the primary charged particle beam 240. Conversely, the SEs 270 exit the detection surface 230 in the backward direction when emitted from the surface of the detection surface 230 opposite the impingement surface of the primary charged particle beam 240.

[0151] The material composition of the detection surface 230 is selected to maximize the emission rate of the secondary electrons (SE) 260 emitted in the forward direction and minimize the emission rate of the secondary electrons 270 emitted in the backward direction. For this purpose, it is advantageous to select a material for the detection surface 230 that has a large atomic number.

[0152] The secondary electron yield or SE yield δ is defined as the quotient of the number of emitted secondary electrons and the number of primary electrons of the electron beam 240. The dependence of the SE yield on the angle of incidence on the detection surface is approximately described by the formula (cf. AG Libinson: “Tilt dependence of the secondary electron emission at low excitation”, Scanning Vol. 21, pp. 23-26 (1998)): δSEδSE=1[cos θ]n where δ SE (0) denotes the SE yield of an electron beam incident perpendicularly on a sample, θ indicates the angle of rotation of the sample with respect to the horizontal orientation, ie θ =90° describes a grazing incidence of the electron beam on the sample and η denotes a material and energy dependent coefficient, which is typically in the range of 0.8 to 1.2.

[0153] The material composition, the material strength or thickness and the orientation of the detection surface 230 to the incident electron beam 240 can be optimized using the given formula so that for a given electron energy of the charged particle beam 240, a low-noise and low-distortion SE signal of the SE 260 emitted in the forward direction is obtained from the detection surface 230. The upper diagram of the Fig. Figure 2 schematically illustrates the trajectory of the SE 260 emitted in the forward direction from the detection surface 230. The SE 260 impinge on the entrance aperture 280 of the detection system 290 or the detector 290, which is designed to detect secondary electrons 270. For example, the detector 290 can be a combination of a scintillator and a photomultiplier, such as an Everhart-Thornley detector.

[0154] The Fig. The configuration schematically illustrated in Figure 2 comprising electron beam 240, detection surface 230, SE 260 and detector comprises an SE detector 290. It is also possible to use two or more SE detectors 290 to detect the SE 260.

[0155] Diagram 300 of the Fig. Figure 3 shows the SE signal strength as a function of the angle between the incident electron beam 240 and the detection surface 230. In this embodiment, unlike in the Fig. 2 - the detection surface 230 is almost perpendicular to the plane of the probe 200, or the beam axis of the incident electron beam 240 and the detection surface have only a small angle of less than 10°. Almost all secondary electrons are captured by the detection system 290, since a suction voltage is applied to the detection system 290. In the Fig. In the example shown in Figure 3, a grazing incidence of the electron beam 240 is chosen to optimize the angle dependence of the SE yield. As can be seen from the formula given above, the SE yield δ increases somewhat more than linearly in the specified small angle range, as expected.

[0156] The upper part of the Fig. 4 or diagram 450 shows the probe 200 of the Fig. 2, which oscillates above a sample 400, for example, an element 400 for photolithography. The oscillation of the probe 200 is symbolized by the double arrow 410. The oscillation of the probe 200 occurs around an axis that is perpendicular to the plane of the paper. The snapshot of the diagram 450 of the Fig. 4 shows the probe 200 or its measuring tip 220 at the time of closest approach between the probe 200 and the sample 400. In the context of the Fig. 1 describes various possibilities to excite a probe 100, 200 to oscillate.

[0157] The lower part of the Fig. 4 or the diagram 490 illustrates the orientation of the detection surface 230 of the probe 200 to the two extreme points, ie reversal points of the direction of movement of the measuring tip 220 of the probe 200. In the arrangement of the detection surface 230 symbolized above the double arrow 460, this has essentially the same orientation as the probe 200 of the Fig. 2. In this configuration, the SE yield is high due to the angle dependence given in Eq. 1. As shown in diagram 490 of the Fig. 4, the SE signal of the SE detector 290 has a maximum.

[0158] In the arrangement illustrated above the double arrow 470, the detection surface 230 has been rotated essentially horizontally due to the deflection of the probe 200. Due to the angular dependence of the SE yield, the SE yield is low in this position of the detection surface 230. The number of secondary electrons captured by the detection system is therefore much lower than for the configuration explained above.

[0159] Diagram 550 of the upper part of the Fig. Figure 5 schematically presents a second embodiment of a probe 500 having a detection structure 530. Similar to the Fig. 4, the probe 500 oscillates above the sample 400. This is again illustrated by the double arrow 410. In the Fig. In the example shown in Figure 5, the detection structure 530 has a rectangular structure 530 with two layers whose materials have different atomic numbers.

[0160] The Fig. Figure 6 presents the secondary electron yield δ as a function of the atomic number. The measured data for the SE yield 8 are from DB Wittry: “Optique des rayons X et microanalyse” (eds. R. Castaing, P. Deschamps, J. Philibert), Hermann, Paris, p. 185 (1966). The Fig. 6 shows the backscattering coefficient η for backscattered electrons as a function of atomic number. The measured data for the backscattering coefficient η are taken from the article "X-Ray Optics and Microanalysis," K.F.J. Heinrich, Proc. 4th Internat. Congress on X-Ray Optics and Microanalysis, eds. R. Castaing, P. Deschamps, and J. Philibert, Hermann, Paris, p. 1509 (1966). Both the SE yield δ and the coefficient for backscattered electrons (BSE) vary as a function of atomic number. To determine the deflection of probe 500, materials with the greatest possible atomic number are preferably used for the detection structure 530. For example, for a combination of a detection structure 530 made of carbon (Z=6) with one of the metals tantalum (Z=73), tungsten (Z=74), rhenium (Z=75), osmium (Z=76), indium (Z=77), platinum (Z=78), gold (Z=79), the quotient of the backscattering coefficients is significantly greater than five.

[0161] Again referring to diagram 500 of the Fig. 5, an electron beam 240 is directed onto a layer of the detection structure 530. The electrons of the electron beam 240 emitted by the detection structure 530 are illustrated by the arrows 560. In the Fig. In the snapshot shown in Figure 5, the probe 500 or its measuring tip 220 is closest to the sample 400. The electron beam 240 is directed at layer 533 of the detection structure 530, which has a small atomic charge or atomic number. During one oscillation period, the electron beam 240 sweeps over the detection structure 530 twice and, at the reversal point with the maximum distance between the probe 500 and the sample 400, is directed at layer 536 of the detection structure 530 with a large atomic number.

[0162] The lower part of the Fig. 5 or the diagram 590 symbolizes the impact of the electron beam 240 on the detection structure 530 of the probe 500 at the two extreme points, i.e. reversal points of the direction of movement of the measuring tip 220 of the probe 500. In the configuration symbolized above the double arrow 560 between the electron beam 240 and the detection structure 530, the electron beam 240 impacts the layer 536 of the detection structure 530 with a large atomic number and the BSE signal caused by the emitted electrons 560 of the electron beam 240 has a maximum. As in the context of the diagram 550 of the Fig. 5, at this time the measuring tip 120 of the probe 500 has the maximum distance from the sample 400.

[0163] At the time indicated by the double arrow 570, the electron beam 240 is directed at layer 533 of the detection structure 530, whose material has a low atomic number. The backscattering coefficient η of the electrons 560 of the electron beam emitted by layer 533 is small, and a BSE detector registers only a small signal. At this time, the distance between the measuring tip 220 of the probe 500 and the sample 400 is minimal.

[0164] Diagram 700 of the Fig. Fig. 7 schematically shows the process of approaching a probe 200, 500 to a sample 400, which is carried out by irradiating the detection surface 230 or the detection structure 530 with an electron beam 240 and detecting the secondary electrons 260 with the detector 290, as in the context of Fig. 2, or the detection of the backscattered or emitted electrons 560. In the diagrams 720, 740 and 760 of the Fig. 7, the detection surface 230 or the detection structure 530 and the electron beam 240 are suppressed for reasons of clarity.

[0165] The diagram 720 represents a free oscillation of the probe 200, 500. The undisturbed oscillation of the probe 200, 500 is symbolized in the diagram 720 by the double arrow 710. The solid line 770 represents the time course of the average distance of the measuring tip 220 of the probe 200, 500 from the surface of the sample 400. The curve or oscillation 780 shows the SE signal 480 of the detector 290 or the BSE signal 580 of the backscattered electrons 560 as a function of time. The frequency of the undisturbed oscillation of the probe 200, 500 is typically in a range of 10 Hz to 10 MHz. In the Fig. In the example shown in Figure 7, the oscillation frequency is 45 kHz. The amplitude of the free oscillation of the probe is typically in the range of 5 nm to 5 µm. In the example of Fig. 7 the oscillation amplitude is about 200 nm.

[0166] Diagram 740 of the Fig. 7 presents a configuration in which the average distance between the measuring tip 120 and the sample 400 is linearly reduced, i.e., the probe 200, 500 is lowered onto the sample 400. As soon as the oscillation amplitude of the probe 200, 500 becomes less than twice the average distance 770, the probe 200, 500 begins to touch the surface of the sample 400 in each oscillation period. As the average distance between the measuring tip 220 of the probe 200, 500 and the surface of the probe 200, 500 decreases, the proportion of time during an oscillation period in which the measuring tip 220 is in contact with the sample 400 increases. As soon as the measuring tip 120 comes into contact with the sample 400 during an oscillation period, the amplitude of the curve 780 begins to decrease. If the measuring tip 220 of the probe 200, 500 no longer lifts off the surface of the probe 200, 500, the SE signal 480 or 500 disappears.the BSE signal 580, since essentially no change in the angular dependence of the SE yield and thus no change in the secondary electrons 260 detected per unit time occurs.

[0167] Diagram 760 of the Fig. 7 finally illustrates the state in which the measuring tip 120 of the probe 200, 500 no longer lifts off the surface of the sample 400.

[0168] The Fig. Figure 8 shows schematically a section through a probe 800 with a cantilever 810 and a measuring tip 220, which are arranged as in the Fig. 2, Fig. 4, Fig. 5 and Fig. 7 was positioned obliquely away from the mounting area 130 of the probe 800. The cantilever 810 of the probe 800 has a detection surface 230. Furthermore, the cantilever 810 of the probe 800 has an opening 820 through which the electron beam 840 can scan or scan the surface 830 of the sample 400 in the region of the tip 650 of the measuring tip 120. In contrast to the previous embodiments, a focused electron beam 840 is used to scan the sample surface 830. To detect the SE 260 emitted by the sample 400 and backscattered electrons (BSE) 560, the detector 290 or a second detector arranged in the column of the scanning particle microscope can be used (in the Fig. 8 not shown).

[0169] A sample 400, for example, a photolithographic mask 400, can be electrically insulating or at least comprise electrically insulating regions. Electrically insulating regions can become electrostatically charged upon irradiation with a charged particle beam, such as the electron beam 840. This distorts the image generated by the electron beam 840. By not attaching the measuring tip 220 and the detection surface 230 of the probe 800 to the free end of the cantilever 810, but rather by having the cantilever 810 have an opening 820 in the region of the tip 830 of the measuring tip 220, the cantilever 810 of the probe 800 can largely shield electrostatic charging of the sample surface 830 and thereby prevent a distorted image of the sample 400. In order for the probe 800 to act as an electrical shielding element, it is necessary that the cantilever 810 of the probe 800 is electrically conductive.

[0170] If the cantilever 810 is also designed to accept an electrical voltage, this can be used to examine an electrostatically charged sample 400 with the probe 800 of a scanning probe microscope. By applying an electrical voltage to the cantilever 810 of the probe 800, the electrostatic charge of the sample 400 can be largely compensated. This enables risk-free scanning of the sample 400 with the probe 800. Without compensation for the electrostatic charge of a sample 400, an electrical arcing may occur between the tip 830 of the measuring tip 120 and the sample 400, which may damage the measuring tip 120 and / or a sample 400 or even cause irreparable damage.

[0171] The Fig. 9 reproduces the Fig. 8 with the only difference that the probe 900 has the detection structure 530 instead of the detection surface 230. The function of the probes 800 and 900 is coupled to their positioning and the measuring tip 220 and is independent of the detection structure 230, 530 for detecting the deflection of the probe 800 and 900. Accordingly, the statements of Fig. 8 for the Fig. 9 as well.

[0172] The Fig. Figure 10 depicts a probe 1000 having a third embodiment of a detection structure in the form of a curved detection surface 1030. As expressed by Equation (1), the SE yield δ(θ) is strongly nonlinearly dependent on the angle θ at which the electron beam 240 impinges on the detection surface 230 of the probe 200. Despite this nonlinearity of the signal of the secondary electrons 260, the movement of the probe 200 in the z-direction, i.e., in the vertical direction, can be controlled in a closed control loop.

[0173] To facilitate the control of the z-motion of probe 200, a detection structure can be curved such that, despite a deflection or oscillation of probe 200, electron beam 1040 always impinges on curved detection surface 1030 at approximately the same or approximately the same angle. This means that the curvature of detection surface 1030 replicates the trajectory motion of the deflection of probe 1000 in the region of impact of electron beam 240. This results in a nearly linear relationship between the deflection of probe 1000 and the SE signal measured with detector 290 due to the largely compensated angular dependence of the SE yield. However, by implementing a detection structure in the form of a curved detection surface 1030, the translation invariance of the incident electron beam 1040 in the longitudinal direction of the probe 1000 across the curved detection surface 1030 must be abandoned.

[0174] The Fig. Figure 11 illustrates a further embodiment of a detection structure that makes it possible to detect a deflection of a probe 1100 of a scanning probe microscope using an electron beam 1140, generally using a charged particle beam 1140. In the Fig. 11, the detection structure 1130 has a marker 1130 in the form of a tip, which is applied to the surface opposite the measuring tip 120 of the cantilever 110 of the probe 1100. In the example of Fig. 11, the marker 1130 is positioned at essentially the same distance from the free end 1160 of the cantilever 110 of the probe 1100 as the measuring tip 120. However, this is not a prerequisite for the functionality of the marker 1130. However, it is advantageous to position the marker 1130 near the free end 1160 of the cantilever 110, as this maximizes the detected change in the marker 1130 upon deflection of the cantilever 110 of the probe 1100. To maximize the contrast of the image generated by the electron beam 1140 of the marker 1130, it is advantageous to use a different material for the marker 1130 than for the cantilever 110 of the probe 1100.

[0175] The right part of the Fig. 11 schematically shows the lateral displacement 1150 of the marking 1130 of the probe 1100 as a result of the deflection of the probe 1100. The deflection of the probe 1100 can be determined from the lateral displacement 1150 of the marking 1130 during imaging with an electron beam 1140. Unlike when using the detection surfaces 230, 1030 to determine the deflection, for imaging the marking 1130 with a scanning electron microscope, the electron beam 1140 is preferably guided in a focused manner over the region of the probe 1100 that has the marking 1130.

[0176] The Fig. Figure 12 presents a probe 1200 having a detection structure 1230 in the form of two markers 124 and 1260. The two markers 1240 and 1260 are again designed in the form of a tip, but they are of different heights. In the example of Fig. 12, the markings 124 and 1260 are arranged along a line on the probe 1200 that is perpendicular to the longitudinal axis of the probe 1200. This arrangement is not a prerequisite for the functioning of the markings 124 and 1260, but it facilitates the evaluation of the measurement signals in the event of a lateral displacement of the markings 1240 and 1260 as a result of a deflection of the probe 1200 when it is imaged by the electron beam 1140.

[0177] In the right part of the Fig. 12 shows the lateral displacement 1250 of the two differently high markings 124 and 1260. Compared to the Fig. 11 with only one marking 1130, the probe 1200 with the two markings 124 and 1260 enables a differential measurement to be carried out to determine a deflection of the probe 1200 in the image of the two markings 124 and 1260. This increases the measurement accuracy of determining the deflection of the probe 1200 in comparison with the probe 1100 of the Fig. 11.

[0178] The Fig. Figure 13 shows a further embodiment of a detection structure 1330 that makes it possible to detect a deflection of a probe 1300 of a scanning probe microscope using an electron beam, generally using a charged particle beam. The electron beam is in the Fig. 13 as well as in the following Fig. 14 is not shown. In the Fig. 13, the detection structure 1330 comprises two rectangular elements 1340 and 1360, which are mounted on the surface 115 opposite the measuring tip 220 of the cantilever 110 of the probe 1300 or the top side 115. The rectangular elements 1340, 1360 extend over the greater part of the width of the probe 1300. The surface normals of the rectangular elements 1340, 1360 are substantially parallel to the longitudinal axis of the probe 1300 and to the cantilever 110, respectively. In the example of Fig. 13, the two rectangular elements 1340, 1360 have different heights. However, this property is not required for their function as detection structure 1330. Furthermore, elements 1340 and 1360 having any thin or sheet-like structure can be used to produce a detection structure 1330.

[0179] Preferably, the rectangular, more generally sheet-shaped elements 1340, 1360 have a material composition that differs from that of the cantilever 110 or its surface. As a result, the electrons of an electron beam generate a material contrast in addition to the topology contrast. Materials with a high atomic number are preferred for the rectangular or sheet-shaped elements 1340, 1360. This applies in particular when backscattered electrons are used to detect the detection structure 1330 in the form of elements 1340 and 1360. However, it is also possible to produce the rectangular or sheet-shaped elements 1340, 1360 predominantly by deposition of carbon. In this embodiment, secondary electrons can be used to detect the detection structure 1330 in the form of elements 1340 and 1360. To detect the two elements 1340 and 1360, a line scan of an electron beam ora charged particle beam in the direction of the longitudinal axis of the probe 1300 is sufficient.

[0180] The upper part of the Fig. 13 presents the measurement signal during a line scan across the two elements 1340, 1360 of the detection structure 1330. As already explained above, secondary electrons 260 and / or backscattered electrons 560 can be used to detect the detection structure 1330. The curve 1380 of the measurement signal shows a peak each time the electron beam scans the elements 1340 and 1360 of the detection structure 1330 during a line scan. The two peaks are shown in the upper part of the Fig. 13 are essentially the same height, since the material composition of the rectangular or sheet-shaped elements 1340 and 1360 is essentially the same. However, this is not a prerequisite for the function of the detection structure 1330. Rather, it is possible to manufacture the two elements 1340 and 1360 of the detection structure 1330 from different materials.

[0181] The lower part of the Fig. 13 shows a snapshot of the oscillating probe 1300 at its zero crossing. Fig. 14 reproduces the Fig. 13 at the time when the measuring tip 120 of the probe 1300 is closest to the sample 400. In most operating modes of a scanning probe microscope, the measuring tip 120 is in mechanical contact with the surface 650 of the sample 400 at this time. Due to the curvature of the probe 1300 or of its cantilever 110, a line scan of an electron beam in the longitudinal direction of the cantilever 110 detects an apparent distance between the two elements 1340 and 1360, which is smaller than in the Fig. 13. Thus, the detection structure 1330 enables the detection of a deflection of the probe 1300 and thus the examination and / or processing of the sample 400 with the probe 1300 of a scanning probe microscope. An advantage of the detection structure 1330 is that, due to the two rectangular or sheet-shaped elements 1340 and 1360, it does not require a reference measurement.

[0182] The two lower left parts of the Fig. 15 show side views of the previously discussed probes 500 and 1300. The two lower right partial images 1555 show front views of the probes 500 and 1300. In addition, the upper left partial image 1505 presents a side view of a probe 1500 and the upper right partial image 1555 presents a front view of the probe 1500 with a detection structure 1530 on the front surface 115 of the probe 1500. The detection structure 1530 has a rectangular element that extends over most of the width of the probe 1500. The rectangular element of the detection structure 1530 tapers upwards. As already mentioned above in the context of Fig. 13, it is advantageous if the material composition of the detection structure 1530 of the probe 1500 and the cantilever 110 of the probe 1500 differ. Unlike the detection structure 1330 of the Fig. 13 requires the detection structure 1530 of the Fig. 15 in the form of a single rectangular element, a reference measurement in order to detect a deflection of the probe 1500 from the shift of the peak of a measurement signal of SE and / or BSE electrons caused by the detection structure 1530.

[0183] The Fig. 16 illustrates further embodiments of detection structures 1630 and 1690. Similar to the Fig. 15, the left sub-images 1605 present side views and the right sub-images 1655 provide front views of the probes 1600, 1640, and 1670. In the probe 1600 of the upper sub-image, the measuring tip 150 points toward the holding plate 130 of the probe 1600, unlike the measuring tips 220. The rectangular detection structure 1630 is mounted on the same surface 125 as the measuring tip 150. This configuration simplifies the manufacture of probe 1600 compared to the previously discussed embodiments of probes 200, 500, 800, 900, 1000, 1100, 1200, 1300, and 1500. Due to the inclination of the detection structure 1630, a line scan in the longitudinal direction of probe 1600 results in a broad maximum of the measurement signal from secondary and / or backscattered electrons. The width of the measurement signal varies periodically with the oscillation frequency of probe 1600.

[0184] In the configuration shown in the middle partial images 1605 and 1655, the detection structure 1630 shown in the upper partial images is deposited on the cantilever 110 of the probe 1640. The measuring tip 170 for the probe 1640 is then deposited on the detection structure 1630. Unlike the measuring tips 220 and 150, the measuring tip 170 is substantially perpendicular to the rear surface 125 of the cantilever 110 of the probe 1640. Similar to the probe 1600, for the probe 1640, the measuring tip 170 and the detection structure 1630 are mounted on the underside 125 of the cantilever 110 of the probe 1640, which facilitates the manufacture of the probe 1640. Furthermore, the configuration of the probe 1640 is advantageous because the bottom 125 of the cantilever 110 has a large distance to the surface 650 of the sample 400.

[0185] The lower parts 1605 and 1655 of the Fig. 16 again presented an embodiment of a probe 1670 in which a measuring tip 120 is attached to the rear side 125 of the cantilever 110 of the probe 1670. The cantilever 110 of the probe 1670 has a rod-shaped detection structure 1690 on the front side 115. Instead of a rod-shaped detection structure 1690, the probe 1670 can have detection structures that are formed in other shapes. For example, the detection structure 1690 can be formed in the shape of a cylinder or cone (in the Fig. 16 (not shown). Furthermore, it is possible to form the detection structure 1690 with any desired contour. Unlike the detection structure 1630, the detection structure 1690 is imaged by a planar scan across the front side 115 of the cantilever 110 of the probe 1670.

[0186] The diagram 1700 of the Fig. 17 schematically shows a section through a device with which a measurement can be made by exciting the oscillation of the probe 800, 900, 1670 during a scanning process. The heart of the device is the signal processing unit 1750. This receives measurement data from the scanning electron microscope 1710 via connection 1765. Using equivalent time sampling (ETS), the signal processing unit 1750 downclocks the measurement data from the scanning electron microscope 1710. This means that the measurement signal from the probe 800, 900, 1670 is recorded at a much lower frequency than the oscillation frequency of the probe 800, 900, 1670. For this purpose, the signal processing unit 1750 has a gated integrator and / or a boxcar averager.

[0187] The probe drive 1720 excites the probe 500, 800, 900, 1000, 1100, 1200, 1300, 1500, 1600, 1640, 1670 to oscillate via the connection 1715. In the Fig. In the example shown in Figure 17, this is probe 1200. Via connection 1725, probe drive 1720 transmits the excitation frequency to delay unit 1730. Delay unit 1730 transmits a trigger signal to deflection generator 1740 via connection 1735, which, via connection 1745, controls scanning 1780 of electron beam 1140 over markings 1240, 1260 over detection structure 1230.

[0188] Scanning probe microscopes are typically designed so that the coordinate system of the piezo actuator and the coordinate system of the sample stage 1110 are aligned. However, due to space constraints when combining a scanning particle microscope and a scanning probe microscope or a nanomanipulator, this is often not possible. The diagram 1800 of the Fig. Figure 18 shows a sample table 1810 with supports 1820 for holding a sample 400. The coordinate system of the sample table 1810 is represented by the reference numeral 1830. The sample 400 is processed by the tip 1850 of the processing head 1860 of the nanomanipulator 1840. Due to the space limitation by the scanning particle microscope used in the Fig. 18, the coordinate system 1870 of the nanomanipulator 1840 is rotated relative to the coordinate system 1830 of the sample stage 1810. To perform a fast coordinate transformation between the two coordinate systems 1830 and 1870, the control unit of the nanomanipulator 1840 can, for example, be equipped with an ASIC (application-specific integrated circuit) that can perform a coordinate transformation between the coordinate systems 1830 and 1870 in less than 10 µs. In an alternative embodiment, the coordinate transformation between the coordinate systems 1830 and 1870 can be performed using analog electronics. In both embodiments, the transformation time for the coordinate transformation is small enough not to delay, or not significantly delay, the control signal of a probe operated in a closed control loop.

[0189] The Fig. Figure 19 shows another possibility for optimally utilizing the limited space available when combining a scanning particle microscope and a scanning probe microscope. Typically, a probe 100, 200, 500, 800, 900, 1000, 1100, 1200, 1300, 1500, 1600, 1640, 1670 of a scanning probe microscope is positioned using a tubular piezo actuator. For example, the processing head 1860 of the nanomanipulator 1840 of the Fig. 18 also features a tubular piezo actuator. However, the tubular shape is unsuitable for use in a nanomanipulator 1840 or a scanning probe microscope when these devices are to be combined with a scanning probe microscope. As shown in the Fig. As illustrated in Figure 19, the column 1920 of a scanning particle microscope limits the space between the sample 400 and the column's exit aperture 1930 to a few millimeters. If a quadmorph piezo actuator 1910 is used instead of a tubular piezo actuator, the space between the sample 400 and the column 1920 can be optimally utilized.

[0190] The Fig. Figure 20 illustrates the processing of a sample under the difficult space constraints of a device that combines a scanning particle microscope and a scanning probe microscope or a nanomanipulator 1840 under the additional condition that the interaction surfaces of the two microscopes overlap on the sample. In the diagram 2000 of the Fig. 20, the sample is a photolithographic mask 2010 with a substrate 2020 and absorbing pattern elements 2030. A particle 2050 is present on the substrate 2020 of the mask 2010, which impairs the imaging properties of the mask 2010. Above the mask 2010, the exit aperture 1930 of the column 1920 of a scanning particle microscope is schematically shown.

[0191] In the Fig. In the example shown in Figure 20, a sacrificial tip 2040 is deposited on the measuring tip 120, 150, 170, 220 of the probe 100, 200, 500, 800, 900, 1000, 1100, 1200, 1300, 1500, 1600, 1640, 1670 or on the tip 1850 of the nanomanipulator 1840 (in the Fig. 20 (not shown). The sacrificial tip 2040 can be deposited on the measuring tip 120, 150, 170, 220, or the tip 1850 using a charged particle beam, for example, an electron beam, while providing a precursor gas. Carbon-containing precursor gases or metal carbonyls can be used as precursor gases.

[0192] The Fig. 21 repeats the configuration of the Fig. 20 after the sacrificial tip 2040 was positioned near or on the particle 2050. The column 1920 is in the Fig. 21 is omitted for clarity. After completion of the positioning process of the sacrificial tip 2040, a precursor gas 2150 is provided in the area of ​​the particle 2040. This is shown in the Fig. 21 is illustrated by the dashed arrow. Additionally, an electron beam 2140 is provided in the region of the particle 2050, which triggers a local deposition process of material 2160 onto the particle 2050 and the tip of the sacrificial tip 2040.

[0193] After connecting the particle 2050 to the tip of the measuring tip 2040, the particle 2050 is removed from the substrate 2020 of the mask 2010 by moving the probe 100, 200, 500, 800, 900, 1000, 1100, 1200, 1300, 1500, 1600, 1640, 1670 or the nanomanipulator 1840. The diagram 2200 of the Fig. 22 illustrates this step by the arrow 2250.

[0194] It is an advantage of the sacrificial tip 2040 deposited on the measuring tip 120, 150, 170, 220 or the tip 1850 that the particle 2050 removed from the mask 2010 can be removed from the sacrificial tip 2040 in an EBIE (Electron Beam Induced Etching) process. Fig. 23 illustrates the removal of the particle 2050 from the sacrificial tip 2040 by means of the electron beam 2340 and the etching gas 2350 (symbolized by the dashed arrow).

[0195] After completion of the EBIE process, the only slightly modified sacrificial tip 2040 is available for the removal of further particles. Before removing the particle 2050 from the sacrificial tip 2040, the material composition of the particle 2050 can be determined by irradiating it with the electron beam 2340 and analyzing the X-rays emitted by the particle 2050 in an energy-dispersive detector.

[0196] The Fig. Figure 24 shows a schematic section through some important components of a device 2400 with which a sample 400 or an element 2010 can be examined and / or processed for photolithography. A probe 200, 500, 800, 900, 1000, 1100, 1200, 1300, 1500, 1600, 1640, 1670 with a detection structure 230, 530, 1030, 1130, 1230, 1330, 1530, 1630, 1690 can be incorporated and used in the device 2400. The device 2400 comprises a modified scanning particle microscope 2410 in the form of a scanning electron microscope (SEM) 2410 and a scanning probe microscope 2470 in the form of an atomic force microscope (AFM) 2470.

[0197] In the SEM 2410 of the Fig. 24, an electron gun 2412 generates an electron beam 2415, which is reflected by the imaging elements arranged in the column 2417, which are arranged in the Fig. 24, is directed as a focused electron beam at location 2420 onto the sample 2422, which may include the sample 400 or a mask 2010. The sample 2422 is arranged on a sample table 2425 (or stage). The imaging elements of the column 2417 of the SEM 2410 can further rasterize or scan the electron beam 2415 across the sample 2422. The sample 2422 can be examined using the electron beam 2415 of the SEM 2410. The electron beam 2415 can further be used to induce a particle beam-induced deposition process and / or an EBIE process. Furthermore, the electron beam 2415 of the SEM 2410 can be used to analyze the particle 2050. In addition, the electron beam 2415 can be used to scan a probe 200, 500, 800, 900, 1000, 1100, 1200, 1300, 1500, 1600, 1640, 1670 of the scanning probe microscope 2470.

[0198] The electrons backscattered from the sample 2422 by the electron beam 2415 and the secondary electrons generated by the electron beam 2415 in the sample 2422 are registered by the detector 2427. Furthermore, the detector 2427 identifies the secondary electrons generated by scanning the marker(s) 1030, 1240, 1260, 1690 applied to the probe 1100, 1200, 1670. The detector 2427, which is arranged in the electron column 2417, is referred to as an "in-lens detector." The detector 2427 can be installed in the column 2417 in various embodiments. The detector 2427 can also be used to detect electrons backscattered from the sample 2422 or a probe 100, 200, 500, 800, 900, 1000, 1100, 1200, 1300, 1500, 1600, 1640, 1670 or a detection structure 230, 530, 1030, 1130, 1230, 1330, 1530, 1630, 1690 mounted on the probe 200, 500, 800, 900, 1000, 1100, 1200, 1300, 1500, 1600, 1640, 1670.The detector 2427 is controlled by the control device 2430 of the device 2400. Furthermore, the device 2400 includes the detection system 290 of the . Fig. 2. The detection system 290 is also controlled by the control device 2430.

[0199] The device 2400 includes a third detector 2435. The third detector 2435 is designed to detect electromagnetic radiation, particularly in the X-ray range. Thus, the detector 2435 enables the analysis of a particle 2050 excited by the electron beam 2415 to determine its material composition. During the analysis of the particle 2050, the sample stage 2425 is lowered and / or the sample 2422 is removed from the beam direction of the electron beam 2415. The detector 2435 is also controlled by the control device 2430.

[0200] The control device 2430 and / or the computer system 2440 can adjust the parameters of the electron beam 2415 to induce a deposition process or an EBIE process and to analyze the particle 2050. Furthermore, the control device 2430 of the device 2400 receives the measurement data from the detector 2427. The control device 2430 can generate images from the measurement data, which are displayed on a monitor 2437. Furthermore, the control device 2430 can receive measurement data from the secondary electrons 260 of the detection system 290 and display them on the monitor 2437 of the computer system 2440. Furthermore, the control device 2430 may include an ASIC that can perform a fast (< 10 µs) coordinate transformation between the coordinate system of the sample stage 2425 and the coordinate system of a probe 100, 200, 500, 800, 900, 1000, 1100, 1200, 1300, 1500, 1600, 1640, 1670.Furthermore, the computer system 2440 or the control unit may include a signal processing unit 1750 that coordinates the excitation of an oscillation of the probe 100, 200, 500, 800, 900, 1000, 1100, 1200, 1300, 1500, 1600, 1640, 1670 and the scanning of the electron beam 2415.

[0201] As already explained above, the electron beam 2415 of the modified SEM 2410 can be used to induce an electron beam-induced deposition process and an EBIE process. To perform these processes, the exemplary scanning electron microscope 2410 of the Fig. 24 three different storage containers 2445, 2450 and 2455.

[0202] The first reservoir 2445 stores a first precursor gas, for example, a metal carbonyl, such as chromium hexacarbonyl (Cr(CO)6), or a carbon-containing precursor gas, such as pyrene. Other carbon-containing precursor gases are specified above. With the aid of the precursor gas stored in the first reservoir 2445, a sacrificial tip 2040 or connecting material 2160 can be deposited onto the sacrificial tip 2040 and / or the particle 2050 in a local chemical reaction, wherein the electron beam 2415 of the SEM 2410 acts as an energy supplier to split the precursor gas stored in the first reservoir 2445 at the location where material is to be deposited. This means that by the combined provision of an electron beam 2415 and a precursor gas 2150, an EBID (Electron Beam Induced Deposition) process is carried out for the local deposition of a sacrificial tip 2040 and / or connecting material 2150.The modified SEM 2410, in combination with the first storage container 2445, forms a separation device.

[0203] An electron beam 2415 can be focused to a spot diameter of a few nanometers. This allows an EBID process to locally deposit bonding material 2150 with a spatial resolution in the low double-digit nanometer range.

[0204] In the in the Fig. In the device 2400 shown in Figure 24, the second reservoir 2450 stores an etching gas 2350 that enables the performance of a local electron beam induced etching (EBIE) process. Using an electron beam induced etching process, a particle 2050 can be removed from a sacrificial tip 2040. An etching gas 2350 can include, for example, xenon difluoride (XeF2), chlorine (Cl2), oxygen (O2), ozone (O3), water vapor (H2O), hydrogen peroxide (H2O2), nitrous oxide (N2O), nitrogen monoxide (NO), nitrogen dioxide (NO2), nitric acid (HNO3), ammonia (NH3), or sulfur hexafluoride (SF6). Thus, the modified SEM 2410, in conjunction with the second reservoir 2450, forms a separation device.

[0205] The third reservoir 2455 can store an additive gas that can be added as needed to the etching gas 2350 held in the second reservoir 2450 or to the precursor gas 2150 stored in the first reservoir 2445. Alternatively, the third reservoir 2455 can store a second precursor gas or a second etching gas.

[0206] Each of the reservoirs 2445, 2450 and 2455 has in the Fig. The scanning electron microscope 2410 shown in Figure 24 has its own control valves 2446, 2451, and 2456 to control the amount of the corresponding gas provided per unit of time, i.e., the gas flow rate at the point 2420 where the electron beam 2415 impinges on the sample 2422. The control valves 2446, 2451, and 2456 are controlled by the control device 2430. This allows the partial pressure ratios of the gas(es) provided at the processing location 2420 for performing an EBID and / or EBIE process to be adjusted within a wide range.

[0207] Furthermore, in the exemplary SEM 2410, the Fig. 24 Each reservoir 2445, 2450 and 2455 has its own gas supply system 2447, 2452 and 2457, which ends with a nozzle 2448, 2453 and 2458 near the point of impact 2420 of the electron beam 2415 on the sample 2422.

[0208] The reservoirs 2445, 2450 and 2455 may have their own temperature adjustment element and / or control element, which allows both cooling and heating of the respective reservoirs 2445, 2450 and 2455. This allows the storage and in particular the provision of the precursor gas and / or the etching gas(es) 2350 at the respective optimal temperature (in the Fig. 24 (not shown). The controller 2430 can control the temperature setting elements and the temperature control elements of the reservoirs 2445, 2450, 2455. During the EBID and EBIE processing operations, the temperature setting elements of the reservoirs 2445, 2450, and 2455 can also be used to adjust the vapor pressure of the precursor gas(es) 2150 stored therein by selecting an appropriate temperature.

[0209] The apparatus 2400 may include more than one reservoir 2445 for storing two or more precursor gases 2150. Furthermore, the apparatus 2400 may include more than one reservoir 2450 for storing two or more etching gases 1650.

[0210] The Fig. The scanning electron microscope 2410 shown in Figure 24 can be operated under ambient conditions or in a vacuum chamber 2460. To perform the EBID and EBIE processes, a negative pressure in the vacuum chamber 2460 relative to the ambient pressure is necessary. For this purpose, the SEM 2410 of the Fig. 24, a pump system 2462 for generating and maintaining a required negative pressure in the vacuum chamber 2460. When the control valves 2446, 2451 and 2456 are closed, a residual gas pressure of < 10 -4Pa. The pump system 2462 may comprise separate pump systems for the upper part of the vacuum chamber 2460 for providing the electron beam 2415 of the SEM 2410 and the lower part 2465 or the reaction chamber 2465 (in the Fig. 24 not shown).

[0211] In addition, the Fig. The exemplary device 2400 shown in FIG. 24 includes a scanning probe microscope 2470, which is embodied in the device 2400 in the form of an atomic force microscope (AFM) 2470 or an atomic force microscope (AFM) 2470. The scanning probe microscope 2470 can accommodate the probes 100, 200, 500, 800, 900, 1000, 1100, 1200, 1300, 1500, 1600, 1640, 1670. Furthermore, it is possible to use the AFM 2470 to examine the photomask 2010 and / or to analyze the particle 2050.

[0212] Of the scanning probe microscope 2470, the device 2400 is the Fig. 24 the measuring head 2475 is shown. The measuring head 2475 comprises a holding device 2480. By means of the holding device 2480 the measuring head 2475 is attached to the frame of the device 2400 (in the Fig. 24 not shown). A piezo actuator in the form of a quadmorph piezo actuator 1910 is attached to the holding device 2480 of the measuring head 2475, which enables a movement of the free end of the piezo actuator 1910 in three spatial directions (in the Fig. 24 not shown). A probe 200 is attached to the free end of the piezo actuator 1910. However, the quadmorph piezo actuator 1910 can also accommodate the probes 100, 500, 800, 900, 1000, 1100, 1200, 1300, 1500, 1600, 1640, 1670 (in the Fig. 24 not shown). The free end of the cantilever 110 of the probe 200 has the measuring tip 220 and a detection structure 230 in the form of the detection surface 230.

[0213] As in the Fig. 24 symbolized by arrows, the sample table 2425 can be moved by a positioning system 2427 in three spatial directions relative to the measuring head 2475 of the AFM 2470 and / or the impact point 2420 of an electron beam 2415. In the example of Fig. 24, the positioning system 2427 is designed in the form of several micromanipulators or displacement elements. The movement of the sample stage 2425 in the sample plane, ie in the xy-plane, which is perpendicular to the beam direction of the electron beam 2415, can be controlled by two interferometers (in the Fig. 24 not shown). In an alternative embodiment, the positioning system 2427 may additionally include piezo actuators (in the Fig. 24 (not shown). The positioning system 2427 is controlled by signals from the control device 2430. In an alternative embodiment, the control device 2430 does not move the sample stage 2425, but rather the holding device 2480 of the measuring head 2475 of the AFM 2470. It is further possible for the control device 2430 to perform a rough positioning of the sample 2422 or the mask 2010 in height (z-direction), and for the piezo actuator 1910 of the measuring head 2480 to perform a precise height adjustment of the AFM 2470. The control device 2430 can be part of a computer system 2440 of the device 2400.

[0214] The AFM 2470 can be used to position the probes 100, 200, 500, 800, 900, 1000, 1100, 1200, 1300, 1500, 1600, 1640, 1670 relative to a particle 2050. Furthermore, the AFM 2470 can be used to remove a probe 200, 500, 800, 900, 1000, 1100, 1200, 1300, 1500, 1600, 1640, 1670 loaded with a particle 2050 by moving it from the photolithographic mask 2010.

[0215] The Fig. Figure 25 shows a section through a device 2500, which can also be used for examining and / or processing an element for photolithography. Unlike the device 2400, the device 2500 does not require any modification of the probe 100 of a scanning probe microscope 2470. Instead of an electron beam 2415 as in the Fig. 24, the device 2500 uses a light pointer system 2550 to detect the deflection of the probe 100 of a scanning probe microscope 2470. The electron source 2412, or more generally a particle source, generates an electron beam 2415 or a charged particle beam, respectively. The two parts 2505 and 2515 of the beam optics focus the electron beam 2415 onto the exit aperture 2590 of the lens 2510. Located in the column 1920 of the device 2500 is the detector 2427, which in the context of Fig. 24 is explained.

[0216] The following describes the modifications made to a scanning electron microscope 2410 to partially guide the light pointer system 2550 within the column 1920 of a scanning electron microscope. The column 1920 of the scanning electron microscope has a window 2580 for coupling and uncoupling the optical radiation of the light pointer system 2550 into the vacuum environment within the column 1920. A lens 2510 is attached to the exit opening 1930 of the column 1920, which couples the radiation guided within the column 1920 out of the column 1920 and couples light reflected from the probe 100 into the column 1920.

[0217] The exemplary light pointer system 2550 of the Fig. 25 uses a laser system 2520, for example, a semiconductor laser, to direct light 2560 through the window 2580, via the deflection mirror 2530 and the lens 2510, onto the cantilever 110 of the probe 100. The light 2570 reflected by the probe 100 or the top side 115 of the cantilever 110 of the probe 100 is collected by the lens 2510 and directed onto the photodetector 2540 via the deflection mirror 2530 and the window 2580. The photodetector 2540 can be implemented, for example, as a four-quadrant photodiode. To prevent electrostatic charging by electrons scattered within the column 1920, the optical window 2580, the deflection mirror 2530 and the lens 2510 can be coated with an optically transparent and electrically conductive layer, for example an indium tin oxide layer.

[0218] The diagram 2605 of the Fig. 26 schematically shows a section through some components of a second embodiment of an optical light pointer system 2650 that enables the combination of a scanning particle microscope 2410 and a scanning probe microscope 2770 with an overlapping interaction region 2660 without negatively affecting the performance of the two tools 2410 and 2470. The scanning particle microscope is illustrated by the lower part 2515 of the beam optics of a scanning electron microscope 2410. At the exit 1930 of the beam optics 2515 or the column 1920, an electron beam 2415 leaves the scanning particle microscope 2410 and impinges on the sample 400 in the interaction region 2660.

[0219] A probe 2600 of a scanning probe microscope 2470 is positioned beneath the column 1920, the measuring tip 120 of which also interacts with the sample 400 in the interaction region 2660. On the front side 115 of the probe 2600, a reflection element 2630 is mounted on the probe 2600 at a non-zero angle to the surface of the cantilever 110. A light source of the light pointer system 2650, which is positioned in the Fig. 26 is not shown, radiates light or optical radiation 2610 via the lens 2670 onto the reflection element 2630. The reflection element 2630 reflects the optical radiation 2620 through the lens 2670 of the light pointer system 2650 onto the detection system of the light pointer system 2650, which is in the Fig. 26 is also suppressed. The reflection element 2630 may comprise a mirror. However, it is also possible for the reflection element 2630 to have a curved shape and thus, in addition to reflecting the optical radiation 2610, additionally image the reflected radiation 2620.

[0220] The reflection element 2630 can be arranged in an angular range of 50° to 85° against the surface 115 of the cantilever 110 of the probe 2600. In the Fig. In the example presented in Figure 26, the reflective element 2630 has an angle of approximately 75°. The reflective element 2630 may have a metal coating, such as a gold, silver, or aluminum coating.

[0221] The Fig. 27 shows a schematic section through a device 2700 that combines a scanning electron microscope 1710, 2410 and a nanomanipulator 1840 as well as the energy-dispersive detector for X-ray radiation 2435. In the device 2700, the column 1920 of the scanning electron microscope 1710, 2410 is tilted relative to the sample normal in order to create more space for processing the sample 400 with the nanomanipulator 1840. The components of the device 2700 are in the context of the discussion of Fig. 17 and Fig. 24 explains.

[0222] The flowchart 2800 of the Fig. 28 provides an overview of a machining process that can be performed on a sample 400 using one of the devices 2400 or 2700. The method begins at step 2805. In the first step 2810, the scanning electron microscope 2410 is switched to a force measurement mode, ie, the electron beam 240, 1040 is positioned on the detection surface 230, 530 of the probe 200, 500, 1000 or the electron beam 1140 is scanned over the marking(s) 1130, 1240, 1460 or the detection structures 1130, 1230, 1690 of the probe 1100, 1200, 1670. It is also possible to scan the electron beam in a line scan over the detection structures 1330, 1530, 1630, 1670 of the probes 1300, 1500, 1600, 1640.

[0223] Then, in step 2820, the measuring tip 120, 150, 170, 220 of the probe 100, 200, 500, 800, 900, 1000, 1100, 1200, 1300, 1500, 1600, 1640, 1670 is brought closer to the sample 400, and the deflection of the probe 100, 200, 500, 800, 900, 1000, 1100, 1200, 1300, 1500, 1600, 1640, 1670 is monitored by means of the electron beam 240, 1140. After completion of the approach process, at step 2825 the electron beam of the scanning electron microscope 2410 is focused on the sample 400 and an image of the area around the measuring tip 120, 150, 170, 220 is acquired by scanning the sample 400.

[0224] At decision block 2830, a decision is made as to whether the machining process of the sample 400 is force-controlled, ie, the electron beam 240 is directed at the detection surface 230, 1030 of the probe 200, 800, 1000 or the marking 1130, 1240, 1260 of the probe 1100, 1200, or image-controlled, ie, the electron beam 840 scans over the sample 400 during machining.

[0225] If the force-controlled mode is used, the scanning electron microscope 2410 is switched back to the force measurement mode at step 2835. At step 2840, the sample 400 is processed by the measuring tip 220 of the probe 200, 800, 900, 1000. During the processing 2840 of the sample 400, for example, the particle 2050 can be moved on the sample 400 and / or, as in the context of Fig. 20 to 22, are removed from the sample 400. In step 2845, the sample 400 is scanned again with the electron beam 840 to verify whether the processing was successful. In step 2860, the resulting SEM image is displayed by the monitor 2437 of the device 2400, 2500, 2700.

[0226] If a decision is made at decision block 2830 to monitor the machining process using image control, the scanning electron microscope is switched to imaging mode at step 2850, i.e., the electron beam 840 scans over the sample 400 during the machining process. At step 2855, the machining of the sample 400 is performed, and at step 2860, the image captured of the sample 400 after completion of the machining process is displayed on the monitor 2437 of the device 2400, 2500, or 2700. The machining process finally ends at block 2865.

[0227] Finally, flowchart 2900 shows the Fig.29 schematically illustrates essential steps in the process of moving a particle 2050 from an element 400, 2010 for photolithography. The method begins at step 2910. At step 2920, a probe 100, 200, 500, 800, 900, 1000, 1100, 1200, 1300, 1500, 1600, 1640, 1670 movable relative to the sample 400 or the element 2010 for photolithography is positioned near the particle 2050 to be moved. In the next step 2930, a charged particle beam 240, 1140 of a scanning particle microscope 2410, a light pointer system 2550, 2650, which is at least partially guided in the scanning particle microscope 2410, or a light pointer system 2650, which comprises a reflection structure 2630 arranged on a probe 2600, which is arranged at a non-zero angle on a front side 115 of the probe 2600, is used to determine a deflection of the probe 100, 200, 500, 800, 900, 1000, 1100, 1200, 1300, 1500, 1600, 1640, 1670 during positioning.Next, at step 2940, the particle 2050 is moved relative to the sample 400, 2010 by moving the probe 100, 200, 500, 800, 900, 1000, 1100, 1200, 1300, 1500, 1600, 1640, 1670. Finally, the method ends at step 2950.

[0228] Further examples: 1. Device (2400, 2600) for examining and / or processing a sample (400, 2010), the device (2400, 2600) comprising: a scanning particle microscope (2410) for providing a beam of charged particles (840) that can be directed onto a surface of the sample (400, 2010); and b. a scanning probe microscope (2470) with a deflectable probe (200, 500, 800, 900, 1000, 1100, 1200, 1300, 1500, 1600, 1640, 1670, 2600); c. wherein a detection structure (230, 530, 1030, 1130, 1230, 1330, 1530, 1630, 1690, 2630) is attached to the deflectable probe (200, 500, 800, 900, 1000, 1100, 1200, 1300, 1500, 16oo, 1640, 1670, 2600). 2. Device (2400) according to the preceding embodiment, wherein the scanning particle microscope (2410) is designed to carry out at least one element from the group: directing the beam of charged particles (240) onto the detection structure (230, 530, 1030), carrying out a line scan of the beam of charged particles over the detection structure (1330, 1530, 1630), and scanning the beam of charged particles (1140) over the detection structure (1130, 1230, 169o). 3. Device (2400, 2600) according to one of the preceding embodiments, wherein the detection structure (230, 530, 1030, 1130, 1230, 1330, 1530, 1630, 1690, 2630) has a material composition that is different from the material composition of the deflectable probe (200, 500, 800, 900, 1000, 1100, 1200, 1300, 1500, 1600, 1640, 1670, 2600). 4. Device (2400) according to one of the preceding embodiments, wherein the detection structure (530, 1130, 1230, 1530, 1690) has a cylindrical, a conical, a rod-shaped or an n-cornered structure, where n ≥3. 5. Device (2400) according to one of the preceding embodiments, wherein the detection structure (530) comprises at least two separate, adjacent materials (533, 536) with different atomic numbers. 6. Device (2400) according to one of the preceding embodiments, wherein the detection structure (230, 1030) comprises a detection surface (230, 1030) which is designed to optimize an emission of charged secondary electrons (260) and / or backscattered electrons (560). 7. Device (2400) according to one of the embodiments 1-5, wherein the detection structure (530, 1330, 1530, 1630) comprises at least one planar element (530, 1330, 1530, 1630) and wherein a normal vector of the planar element (530, 1330, 1530, 1630) is directed substantially parallel to the longitudinal axis of the deflectable probe (500, 1300, 1500, 1600). 8. Device (2400) according to the preceding embodiment, wherein the detection structure (1330) comprises at least two planar elements (1340, 136o) arranged along the longitudinal axis of the deflectable probe (1300). 9. Device (2400) according to one of the preceding embodiments, wherein the detection structure (1130, 1230, 1690) comprises at least one marking (1130, 1240, 1260, 1690). 10. Device (2600) according to embodiment 1, further comprising an optical light pointer system (2650), wherein the detection structure (2630) comprises a reflection structure (2630) which is designed to reflect optical radiation of the optical light pointer system (2650), and wherein the reflection structure (2630) is arranged at an angle different from zero with respect to a front side (115) of the deflectable probe (2600). 11. Device (2400, 2600) according to one of the preceding embodiments, wherein the probe (800, 900) has an opening (820) which is designed so that the beam of charged particles (840) can be directed onto the sample (400, 2010) through the opening (820). 12. Device (2400, 2600) according to one of the preceding embodiments, wherein the probe (200, 500, 800, 900, 1000, 1100, 1200, 1500, 1600, 1670, 2600) is designed to be electrically conductive for shielding and / or compensating an electrostatic charge of the sample (400, 2010). 13. Device (2500) for examining and / or processing a sample (400, 2010), the device comprising: a scanning particle microscope (2410) for providing a beam of charged particles (840) that can be directed onto a surface of the sample (400, 2010); and b. a scanning probe microscope (2470) with a deflectable probe (100) and a light pointer system (2550) for detecting a deflection of the probe (100); c. wherein the light pointer system (2550) is guided at least partially in a column (1920, 2417) of the scanning particle microscope (2410). 14. Device (2500) according to the preceding embodiment, wherein the scanning particle microscope (2410) has at its exit opening (1930) for the beam of charged particles (2415) at least one lens (2510) for the light pointer system (2550) with an opening (2590) for the passage of the beam of charged particles (2415). 15. Device (2500) according to embodiment 12 or 13, wherein the scanning particle microscope (2410) has a deflection mirror (2530) and a window (2580) of the light pointer system (2550). 16. Device (2500) according to one of embodiments 12-14, wherein optical elements (2510, 2530, 2580) of the light pointer system (2550) arranged in the scanning particle microscope (2410) have an optically substantially transparent and electrically conductive coating. 17. Device (2400, 2500, 2600) according to one of the preceding embodiments, further comprising a detector (2435) for detecting X-radiation. 18. Method (2900) for moving a particle (2050) on the sample (400, 2010) for photolithography, comprising the following steps: a. positioning (2920) a probe (100, 200, 500, 800, 900, 1000, 1100, 1200, 1300, 1500, 1600, 1640, 1670, 2600) which is movable relative to the sample (400, 2010) in a vicinity of the particle (2050) to be moved; b. Using (2930) a charged particle beam (240, 1040, 1140) of a scanning particle microscope (2410), a light pointer system (2550) that is at least partially guided in the scanning particle microscope (2410), or a light pointer system (2650) that comprises a reflection structure (2630) arranged on a probe (2600) that is arranged at a non-zero angle on a top side (115) of the probe (2600), to determine a deflection of the probe (100, 200, 500, 800, 900, 1000, 1100, 1200, 1300, 1500, 1600, 1640, 1670, 2600) during positioning; and c. Moving (2940) the particle (2050) by moving the probe (100, 200, 500, 800, 900, 1000, 1100, 1200, 1300, 1500, 1600, 1640, 1670, 2600) relative to the sample (400, 2010). 19. Method (2900) according to the preceding embodiment, further comprising the step of: imaging the sample (400, 2010) and / or the particle (2050) with the particle beam (840, 2415) of the scanning particle microscope (2410). 20. The method (2900) according to embodiment 17 or 18, further comprising the step of: connecting the probe (100, 200, 500, 800, 900, 1000, 1100, 1200, 1300, 1500, 1600, 1640, 1670, 2630) to the particle (2050). 21. A computer program comprising instructions which, when executed by a computer system, cause the device (2400, 2500, 2600) according to any one of embodiments 1 to 16 to carry out the method steps according to any one of embodiments 17 to 19.

Claims

[1] Device (2400, 2600) for examining and / or processing a sample (400, 2010), the device (2400, 2600) comprising: a scanning particle microscope (2410) for providing a beam of charged particles (840) that can be directed onto a surface of the sample (400, 2010); and b. a scanning probe microscope (2470) with a deflectable probe (200, 500, 800, 900, 1000, 1100, 1200, 1300, 1500, 1600, 1640, 1670, 2600); c. wherein a detection structure (230, 530, 1030, 1130, 1230, 1330, 1530, 1630, 1690, 2630) is attached to a front side (115) of the deflectable probe (200, 500, 800, 900, 1000, 1100, 1200, 1300, 1500, 1600, 1640, 1670, 2600) and a measuring tip (120) is attached to a rear side (125) of the deflectable probe (200, 500, 800, 900, 1000, 1100, 1200, 1300, 1500, 1600, 1640, 1670, 2600); d. wherein the device is arranged to determine a deflection of the probe by directing the beam of charged particles (240) onto the detection structure (230, 530, 1030). [2] Device (2400) according to the preceding claim, wherein the scanning particle microscope (2410) is configured to perform at least one element from the group: performing a line scan of the charged particle beam over the detection structure (1330, 1530, 1630), and scanning the charged particle beam (1140) over the detection structure (1130, 1230, 1690). [3] Device (2400, 2600) according to one of the preceding claims, wherein the detection structure (230, 530, 1030, 1130, 1230, 1330, 1530, 1630, 1690, 2630) has a material composition that is different from the material composition of the deflectable probe (200, 500, 800, 900, 1000, 1100, 1200, 1300, 1500, 1600, 1640, 1670, 2600). [4] Device (2400) according to one of the preceding claims, wherein the detection structure (530, 1130, 1230, 1530, 1690) has a cylindrical, a conical, a rod-shaped or an n-cornered structure, where n ≥3. [5] Device (2400) according to one of the preceding claims, wherein the detection structure (530) comprises at least two separate, adjacent materials (533, 536) with different atomic numbers. [6] Device (2400) according to one of the preceding claims, wherein the detection structure (230, 1030) comprises a detection surface (230, 1030) which is designed to optimize an emission of charged secondary electrons (260) and / or backscattered electrons (560). [7] Device (2400) according to one of claims 1-5, wherein the detection structure (530, 1330, 1530, 1630) comprises at least one planar element (530, 1330, 1530, 1630) and wherein a normal vector of the planar element (530, 1330, 1530, 1630) is directed substantially parallel to the longitudinal axis of the deflectable probe (500, 1300, 1500, 1600). [8] Device (2400) according to the preceding claim, wherein the detection structure (1330) comprises at least two planar elements (1340, 1360) arranged along the longitudinal axis of the deflectable probe (1300). [9] Device (2400) according to one of the preceding claims, wherein the detection structure (1130, 1230, 1690) comprises at least one marking (1130, 1240, 1260, 1690). [10] The device (2600) of claim 1, further comprising an optical light pointer system (2650), wherein the detection structure (2630) comprises a reflection structure (2630) configured to reflect optical radiation of the optical light pointer system (2650), and wherein the reflection structure (2630) is arranged at a non-zero angle relative to a front side (115) of the deflectable probe (2600). [11] The device (2400, 2600) of any preceding claim, wherein the probe (800, 900) has an aperture (820) configured to direct the beam of charged particles (840) onto the sample (400, 2010) through the aperture (820). [12] Device (2400, 2600) according to one of the preceding claims, wherein the probe (200, 500, 800, 900, 1000, 1100, 1200, 1500, 1600, 1670, 2600) is designed to be electrically conductive for shielding and / or compensating an electrostatic charge of the sample (400, 2010).

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