Optimization method for FIB-SEM double-beam synchronous controllable processing of flexible material

Abstract

The invention relates to an optimization method for FIB-SEM double-beam synchronous controllable processing of a flexible material and application of the optimization method. The optimization method for FIB-SEM double-beam synchronous controllable processing of the flexible material comprises a surface cleaning step, a scanning electron microscope imaging step, a double-beam centering adjustment step and an etching step, in the etching step, ion beam processing and electron beam imaging work at the same time, and in the etching step, ion beam processing and electron beam imaging work at the same time; and the electron beam is started after the preset processing pattern and before the ion beam starts processing, and is quickly turned off after the processing is completed. According to the optimization method for the FIB-SEM double-beam synchronous controllable processing of the flexible material, the situation that the performance of the material is reduced due to deformation caused by bombardment and heat generation of the high-energy particle beam can be avoided, and meanwhile the reliability of the etching process is kept.

Description

Technical Field

[0001] The present invention belongs to the field of high-energy beam micro-nano processing, and in particular relates to an optimization method for FIB-SEM dual-beam synchronous controllable processing of flexible materials. Background Art

[0002] With the rapid development of materials science and technology, the FIB (Focused Ion Beam) and SEM (Scanning Electron Microscope) dual-beam system provides a high-precision, high-resolution solution for micro-nano processing of materials. This system can not only realize the imaging of the microstructure of materials, but also perform precise etching, deposition and other processing operations on materials through ion beams, while the SEM is used to monitor the processing process in real time to ensure the processing accuracy. In addition, the FIB-SEM dual-beam system has become an important tool for realizing the processing of complex material structures due to its non-contact processing, high processing accuracy and strong controllability.

[0003] However, flexible materials have problems such as deformation and performance degradation during FIB-SEM processing. Therefore, how to optimize the method of dual-beam synchronous processing using a focused ion beam-scanning electron microscope system to achieve efficient and high-precision processing of materials while maintaining the original properties of the materials is of great significance to promoting the application of materials in the fields of flexible electronic devices, wearable devices, biomedical materials, etc. Summary of the invention

[0004] The inventors of the present application have found that when a focused ion beam-scanning electron microscope is used for dual-beam synchronous processing of flexible materials, the material will deform due to the irradiation of the high-energy charged particle beam, resulting in a decrease in the processing performance of the material. As for the cause of material deformation, the inventors of the present application have found that the deformation of some materials is due to the poor thermal conductivity of the material. During the processing, the heat brought by the ion beam accumulates on the surface of the material, causing the material to be heated and thermally deformed, thereby causing performance degradation.

[0005] In view of this problem, the inventors of the present application have found after repeated research and experiments that by adopting the method of synchronously and controllably processing flexible materials using a focused ion beam-scanning electron microscope dual beam of the present application, regulating the dual beam parameters and the processing process, and optimizing the processing method, high-quality processing of materials can be achieved, and the application expansion of the focused ion beam-scanning electron microscope dual beam system in more fields can be promoted. In particular, in the etching step, ion beam processing and electron beam imaging work simultaneously, and the electron beam imaging is turned on after the preset processing pattern and before the ion beam starts processing, and is quickly turned off after the processing is completed to perform focused ion beam etching processing. Since the local thermal effect of the electron beam is smaller than that of the ion beam, the electron beam imaging is turned on after the preset processing pattern and before the ion beam starts processing, which can reduce the initial stress accumulation inside the sample. When the ion beam is subsequently turned on for processing, due to the real-time monitoring and feedback of the electron beam, the processing process can be more accurately controlled, and the additional stress caused by improper processing that causes the material to be deformed by heat can be reduced, which can improve the quality of the formed pattern.

[0006] In order to achieve the above object, the present invention includes the following technical solutions.

[0007] On the one hand, the present invention provides an optimization method for FIB (focused ion beam)-SEM (scanning electron microscope) dual beam synchronous controllable processing of flexible materials, wherein the thermal conductivity of the material is less than 0.2 W / mK,

[0008] The method comprises the following steps:

[0009] Surface cleaning step: a step of cleaning the surface of the material by chemical or physical methods;

[0010] Scanning electron microscope imaging step: placing the material in a sample chamber of a FIB-SEM double-beam microscope, adjusting the acceleration voltage and beam current of the scanning electron microscope for surface imaging, selecting feature points / marks and adjusting electrical parameters of the objective lens to achieve clear imaging at different magnifications, and obtaining initial morphological information of the surface of the material;

[0011] Dual-beam centering adjustment step: on the basis of clear imaging of the material by scanning electron microscope, adjusting the acceleration voltage and beam current of the focused ion beam to perform ion beam imaging, finding characteristic points / marks and adjusting the electrical parameters of the electrostatic lens to achieve clear imaging at different magnifications, and then repeatedly switching the imaging windows of the focused ion beam and the scanning electron microscope to ensure that the characteristic points / marks are located at the center of the field of view of the FIB image and the SEM image at the same magnification, respectively, finding the junction point of the focused ion beam, the scanning electron microscope and the material, and achieving dual-beam centering adjustment;

[0012] Etching step: according to the preset processing pattern, adjust the focused ion beam scanning mode, dosage and processing time as well as the scanning mode of the scanning electron microscope, and use the scanning electron microscope to image the processing area to observe the processing process and morphology changes in real time while using the focused ion beam to perform etching processing;

[0013] In the etching step, ion beam processing and electron beam imaging work simultaneously, and electron beam imaging is turned on after the preset processing pattern and before the ion beam processing begins.

[0014] In the etching step, the electron beam imaging is quickly turned off after the ion beam processing is completed.

[0015] In some embodiments of the optimization method for FIB-SEM dual-beam synchronous controllable processing of flexible materials, preferably, in the aforementioned etching step, the operating voltage of the focused ion beam is 0.5kV to 30kV, and the operating beam current of the focused ion beam is controlled between 10pA and 100pA.

[0016] In some embodiments of the optimization method for FIB-SEM dual-beam synchronous controllable processing of flexible materials, preferably, in the aforementioned etching step, the working voltage of the electron beam is 0.5kV to 15kV, and the working beam current of the electron beam is 30pA to 10nA.

[0017] In some embodiments of the optimization method for FIB-SEM dual-beam synchronous controllable processing of flexible materials, preferably, the type of the aforementioned focused ion beam is gallium ions.

[0018] In some embodiments of the optimization method of FIB-SEM dual-beam synchronous controllable processing of flexible materials, preferably, it also includes: a step of gold plating the surface of the material before the aforementioned scanning electron microscope imaging step.

[0019] In some embodiments of the optimization method for FIB-SEM dual-beam synchronous controllable processing of flexible materials, preferably, the aforementioned material is a polymer.

[0020] In some embodiments of the optimization method for FIB-SEM dual-beam synchronous controllable processing of flexible materials, preferably, the aforementioned polymer is polydimethylsiloxane or polymethyl methacrylate.

[0021] On the other hand, the present invention also provides the use of the aforementioned FIB-SEM dual-beam synchronous controllable processing of flexible materials optimization method in material processing.

[0022] In the optimization method of the FIB-SEM dual-beam synchronous controllable processing of flexible materials of the present invention, in the etching step, the electron beam of the scanning electron microscope is raster-scanned before the ion beam etching is turned on and during the processing to perform focused ion beam etching. In this way, the performance degradation caused by the deformation of the material due to heat can be avoided, while the reliability of the etching process is maintained. In addition, the optimization method of the FIB-SEM dual-beam synchronous controllable processing of flexible materials of the present invention uses a scanning electron microscope to monitor the focused ion beam processing process in real time, and can dynamically adjust the processing parameters according to the real-time observation results to adapt to different sample processing requirements, and has strong flexibility. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0024] Figure 1 A flow chart of processing flexible materials in dual-beam synchronous working mode of an optimization method according to one embodiment of the present invention.

[0025] Figure 2 This is a scanning electron microscope image of the nano-grooves processed on polydimethylsiloxane in Example 1.

[0026] Figure 3 This is a scanning electron microscope image of the nano-grooves processed on polydimethylsiloxane in Comparative Example 1.

[0027] Figure 4 This is a scanning electron microscope image of the nano-grooves processed on silicon in Reference Example 1.

[0028] Figure 5 This is a scanning electron microscope image of the nano-grooves processed on silicon in Reference Example 2. DETAILED DESCRIPTION

[0029] In order to enable those skilled in the art to better understand the solution of the present application, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present application.

[0030] The optimization method of the FIB-SEM dual-beam synchronous controllable processing of flexible materials disclosed in the present invention is aimed at materials with poor thermal conductivity. The thermal conductivity of such materials can be characterized by thermal conductivity. Materials with poor thermal conductivity refer to materials with a thermal conductivity of less than 0.2 W / mK.

[0031] The aforementioned material is a flexible material. Flexible materials have the characteristics of bendability, stretchability, light weight, and easy integration into various complex shapes, and are used in many fields such as electronics, medical treatment, energy, and environmental protection, so they are preferred.

[0032] Examples of the material of the aforementioned material include polymers and stretchable electronic elements, and polymers are preferred.

[0033] Examples of the polymer include polyvinyl alcohol, polyester, polyimide, polyethylene naphthalate, polydimethylsiloxane, polyurethane, poly(meth)acrylate, etc. When the material is a polymer, the polymer is preferably polydimethylsiloxane or polymethyl methacrylate in terms of processing accuracy, processing efficiency, and maintenance of material properties during processing.

[0034] The molecular weight of the polymer may be, for example, in the range of 500 to 100,000.

[0035] The disclosed FIB-SEM dual-beam synchronous controllable processing method for flexible materials is performed using a focused ion beam-scanning electron microscope system, such as Helios 5CX DualBeam, Helios5UX DualBeam, Helios 5HX DualBeam, TESCAN Amber, and other systems.

[0036] The type of ions in the aforementioned focused ion beam may be, for example, gallium ions.

[0037] The optimization method of FIB-SEM dual beam synchronous controllable processing of flexible materials disclosed in the present invention, the process is shown in Figure 1 , including a surface cleaning step, a scanning electron microscope imaging step, a dual beam centering adjustment step, and an etching step, etc. Each step is described below.

[0038] [Surface cleaning steps]

[0039] The step of cleaning the surface of a material by chemical or physical methods.

[0040] Examples of the chemical method include removal using a solvent such as acetone, alcohol, or deionized water, and acid or alkali treatment.

[0041] Examples of the physical method include ultrasonic cleaning and mechanical cleaning.

[0042] [Scanning Electron Microscope Imaging Steps]

[0043] In the scanning electron microscope imaging step, the material to be processed is placed in the sample chamber of the FIB-SEM dual-beam microscope, the acceleration voltage and beam current of the scanning electron microscope are adjusted for surface imaging, and feature points / marks are selected and the electrical parameters of the objective lens are adjusted for surface imaging to obtain the initial morphological information of the material surface.

[0044] In the aforementioned scanning electron microscope imaging step, by selecting appropriate acceleration voltage and beam current, surface imaging is performed, feature points / marks are selected and placed in the center of the field of view, and the objective lens is used to focus and adjust the contrast, brightness, astigmatism, etc. of the formed image, so as to perform high-resolution imaging of the sample and obtain a clear surface morphology image.

[0045] In the aforementioned scanning electron microscope imaging step, the aforementioned acceleration voltage may be adjusted to, for example, a range of 0.5 to 15 kV.

[0046] In the aforementioned scanning electron microscope imaging step, the aforementioned beam current is adjusted to, for example, a range of 30 pA to 10 nA.

[0047] For the aforementioned objective lens focusing parameters, the working distance can be set to, for example, 6 mm.

[0048] [Double beam centering adjustment steps]

[0049] In the dual-beam centering adjustment step, first, select the appropriate acceleration voltage and beam current of the focused ion beam (also called "FIB") to image the aforementioned material, place the selected feature points / marks at the center of the field of view of the FIB image, adjust the condenser parameters and the focusing parameters of the objective lens, and adjust the contrast, brightness, astigmatism, etc. of the formed image, and observe the effect of the focused ion beam on the surface of the material to obtain a clear FIB image. Then, switch the imaging windows of the focused ion beam and the scanning electron microscope (also called "SEM") back and forth to ensure that the feature points / marks are located at the center of the field of view of the FIB image and the SEM image at the same magnification, find the junction of the focused ion beam, the scanning electron microscope and the material, and achieve dual-beam centering adjustment.

[0050] By adjusting the acceleration voltage, beam current, condenser parameters and objective lens focusing parameters of the focused ion beam, high-resolution imaging can be performed, so that the effect of the focused ion beam on the material surface can be obtained, providing a basis for the dual-beam alignment adjustment described later.

[0051] Then, the dual beam centering adjustment is performed by switching the imaging windows of the FIB and SEM back and forth. The aforementioned "dual beam centering adjustment" means selecting feature points for ion beam system imaging, selecting a suitable aperture, adjusting the condenser voltage, and adjusting the objective lens voltage for focusing, thereby adjusting the contrast, brightness, astigmatism, etc. of the formed image to make the focused ion beam image clear.

[0052] During the aforementioned "dual beam centering adjustment", it is necessary to carefully observe the images in the two windows, find the junction of FIB, SEM and material, and make the feature points / marks at the same magnification be located at the center of the field of view of the FIB image and the SEM image respectively. The aforementioned dual beam centering adjustment is the key to ensure the accuracy of dual beam synchronous processing.

[0053] The acceleration voltage of the aforementioned focused ion beam can be adjusted to, for example, 30 kV.

[0054] The beam current of the aforementioned focused ion beam can be adjusted to a range of, for example, 10 pA to 100 pA by selecting a suitable aperture and adjusting the condenser parameters.

[0055] For the aforementioned objective lens focusing parameters, for example, the working distance can be set to 12 mm.

[0056] [Etching steps]

[0057] During the etching step, the focused ion beam processing mode, dosage, processing time and scanning mode of the scanning electron microscope are adjusted according to the preset processing pattern. The processing area is imaged using a scanning electron microscope to observe the processing process and morphology changes in real time while the focused ion beam is used for etching.

[0058] In the usual operation process, after the aforementioned "double beam centering adjustment step" is completed, in the process of etching processing using a focused ion beam, a general scanning electron microscope will use a single scan to avoid the electron beam emitted from the scanning electron microscope from having an adverse effect on the etching process. However, the inventors of the present application unexpectedly discovered during the research process that by working simultaneously with ion beam processing and electron beam imaging in the etching step, the electron beam imaging is turned on after the preset processing pattern and before the ion beam starts processing. Moreover, in the etching step, the electron beam imaging is quickly turned off after the ion beam processing is completed. Thus, not only can the scanning electron microscope be used to observe the etching process in real time, but the local thermal effect of the electron beam is relatively small relative to the ion beam. After the preset processing pattern and before the ion beam starts processing, the electron beam imaging is turned on to reduce the initial stress accumulation inside the sample. When the ion beam is subsequently turned on for processing, due to the real-time monitoring and feedback of the electron beam, the processing process can be more accurately controlled, and the additional stress caused by improper processing can be reduced to cause the material to be deformed by heat, so that the quality of the formed pattern can be improved. After further research, the inventors of the present application and others found that the aforementioned effect is particularly obvious, especially when the thermal conductivity of the material to be processed is poor. The inventors of the present application analyzed that the reason why the accuracy of the formed graphics can be improved is that the local thermal effect of the electron beam is smaller than that of the ion beam, which reduces the initial stress accumulation inside the sample; in addition, due to the real-time feedback and monitoring of the electron beam, the additional stress generated by improper processing is reduced, which causes the material to deform due to heat, thereby improving the quality of the processed graphics.

[0059] After completing the aforementioned dual-beam centering adjustment steps, the FIB processing mode, dosage, processing time, and SEM scanning mode are adjusted according to the preset processing pattern. The purpose is to optimize the dual-beam processing parameters according to the requirements and sample characteristics to ensure the controllability and processing quality of the processing process. By adjusting the aforementioned parameters, the FIB and SEM are kept synchronized so that the two can work closely together during the processing process.

[0060] By operating ion beam processing and electron beam imaging simultaneously in the etching step, the electron beam imaging is turned on after the preset processing pattern and before the ion beam processing begins, and the electron beam imaging is quickly turned off after the ion beam processing is completed in the etching step. In this way, the material can be prevented from being deformed due to heat, thereby causing performance degradation, while maintaining the reliability of the etching process.

[0061] The shape of the aforementioned processed pattern is not particularly limited, and may be, for example, a nanowire, a nanogroove, a nanohole, or the like.

[0062] In the aforementioned etching step, the working voltage of the focused ion beam may be, for example, 0.5 kV to 30 kV, and the working beam current of the focused ion beam may be controlled to be, for example, between 10 pA and 100 pA.

[0063] In addition, in the aforementioned etching step, the operating voltage of the electron beam may be, for example, 0.5 to 15 kV, and the operating beam current of the electron beam may be, for example, between 30 pA and 10 nA.

[0064] In some embodiments, the optimization method of FIB-SEM dual beam synchronous controllable processing of flexible materials further includes: before the scanning electron microscope imaging step, the surface of the material is plated with a conductive material. The conductive material can be gold or carbon, preferably gold.

[0065] The aforementioned conductive material plating step can be performed by methods such as ion sputtering, magnetron sputtering, etc. The conductive material plating step can enhance the conductivity of the material. In particular, when the conductivity of the material itself is poor, the conductive material plating step is preferably performed.

[0066] The present disclosure is further described in detail below in conjunction with the embodiments. It is to be understood that the described embodiments are only a part of the embodiments of the present disclosure, rather than all of the embodiments. Based on the embodiments in the present disclosure, all other embodiments obtained by ordinary technicians in the field without creative work are within the scope of protection of the present disclosure.

[0067] Example

[0068] Embodiment 1:

[0069] Material: Polydimethylsiloxane, brand: Dow Corning, model: 184; thermal conductivity: 0.15W / mK.

[0070] Focused ion beam-scanning electron microscope dual beam system: TESCAN Amber, TESCAN

[0071] Ion beam parameters: acceleration voltage 30 kV, beam current 50 pA, raster scanning;

[0072] Electron beam parameters: acceleration voltage 10 kV, beam current 3 nA, raster scanning.

[0073] The above materials were ultrasonically cleaned with acetone, alcohol, and deionized water in turn to ensure cleaning. Then, a small ion sputtering device was used to gold-plate the surface of the polydimethylsiloxane film under the conditions of a plasma current of 10 mA and a working time of 50 s to improve the conductivity of the sample and reduce the local charge accumulation effect that may occur during FIB processing.

[0074] The above-mentioned material to be processed is fixed to the sample stage by conductive glue, and the sample stage is placed in the sample chamber of the focused ion beam-electron beam dual beam microscope for scanning electron microscope imaging. The electron beam acceleration voltage is selected as 10kV, and the beam current is selected as 3nA. Surface imaging is performed, and feature points / marks are selected and placed in the center of the field of view. The objective lens is used to focus and the contrast, brightness, and astigmatism of the formed image are adjusted, so that high-resolution imaging of the sample can be performed to obtain a clear surface morphology image. In addition, the working distance is set to 6mm, and the clarity and resolution of the imaging can be ensured by focusing with the objective lens and adjusting the contrast, brightness, and astigmatism of the formed image.

[0075] In the dual-beam centering adjustment, first, switch to the ion beam imaging window, select the ion beam acceleration voltage as 30kV, select the appropriate aperture and adjust the condenser parameters to make the ion beam current 50pA, place the selected feature points / marks in the center of the FIB image field of view, adjust the objective lens focusing parameters to image the selected feature points / marks, and adjust the contrast, brightness, astigmatism, etc. of the formed image to make the focused ion beam image clear. Then, switch back and forth between the imaging windows of the focused ion beam and the scanning electron microscope, and perform dual-beam centering adjustment to find the junction of the focused ion beam, the scanning electron microscope, and the material. And make sure that the feature points / marks are located at the center of the field of view of the FIB image and the SEM image at the same magnification.

[0076] Switch to the ion beam window, the processing pattern is preset to a nano-groove with a length of 10μm and a depth of 0.5μm, and the ion beam processing method is raster scanning. Turn on the electron beam for imaging, and then turn on the ion beam for etching. While using the focused ion beam for etching, use the scanning electron microscope to image the processing area to observe the processing process and morphological changes in real time.

[0077] Figure 2 The scanning electron microscope image of the nano-grooves obtained by processing on the polydimethylsiloxane is shown in FIG. Figure 2 It can be seen that the etching pattern obtained by the etching process is consistent with the preset processing pattern, indicating that high-quality nano-grooves are formed on the material by etching.

[0078] Comparative Example 1:

[0079] Material: polydimethylsiloxane, brand Dow Corning, model 184, thermal conductivity 0.15W / mK;

[0080] Ion beam parameters: acceleration voltage 30 kV, beam current 50 pA, raster scanning;

[0081] Electron beam parameters: acceleration voltage of 10 kV, beam current of 3 nA, raster scanning.

[0082] In Comparative Example 1, the above-mentioned materials, ion beam parameters and electron beam parameters were used, and in the etching process step, the ion beam was turned on for etching, and then the electron beam was turned on for imaging.

[0083] Figure 3 The scanning electron microscope image of the nano-grooves obtained by the aforementioned etching process is shown. Figure 3 It can be seen that the nano-grooves formed by the etching process are obviously "cracked" and are formed into a "rugby ball" shape that is wide in the middle and thin at both ends.

[0084] Reference Example 1:

[0085] Material: Silicon, Zhongjing Keyi, model 100N silicon wafer single polishing, thermal conductivity 148W / mK.

[0086] Processing pattern: nano-grooves with a length of 10 μm and a depth of 0.5 μm.

[0087] Ion beam parameters: acceleration voltage 30 kV, beam current 50 pA, raster scanning;

[0088] Electron beam parameters: acceleration voltage 10 kV, beam current 3 nA, raster scanning.

[0089] The processing was performed in the same manner as in Example 1 except for the above-mentioned materials, ion beam parameters, and electron beam parameters.

[0090] Figure 4 This is a scanning electron microscope image of the nano-grooves obtained by the above processing.

[0091] Reference Example 2:

[0092] Material: Silicon, Zhongjing Keyi, model 100N silicon wafer single polishing, thermal conductivity 148W / mK.

[0093] Processing pattern: nano-grooves with a length of 10 μm and a depth of 0.5 μm.

[0094] Ion beam parameters: acceleration voltage 30 kV, beam current 50 pA, raster scanning;

[0095] Electron beam parameters: acceleration voltage 10 kV, beam current 3 nA, raster scanning.

[0096] The processing was performed in the same manner as in Comparative Example 1 except for the above-mentioned materials, ion beam parameters, and electron beam parameters.

[0097] Figure 5 This is a scanning electron microscope image of the nano-grooves obtained by the above processing.

[0098] from Figure 2 and Figure 3 From the comparison, it can be seen that when processing on materials with poor thermal conductivity, the method of the present application adopts the method in which ion beam processing and electron beam imaging work simultaneously during etching processing, and electron beam imaging is turned on after the preset processing pattern and before the ion beam starts processing, and is quickly turned off after the processing is completed. The shape of the nano-groove obtained by processing is consistent with the preset shape, and the processing quality is high. However, for the method of Comparative Example 1 in which ion beam processing and electron beam imaging work simultaneously during etching processing, electron beam imaging is turned on after the ion beam processing starts, and is quickly turned off after the processing is completed, the shape of the nano-groove obtained by processing has obvious defects.

[0099] In addition, from Figure 4 and Figure 5 From the comparison, it can be seen that for silicon with good thermal conductivity, whether it is reference example 1 of the method of the present application in which ion beam processing and electron beam imaging work simultaneously during etching processing, electron beam imaging is turned on after the preset processing pattern and before the ion beam starts processing, and is quickly turned off after the processing is completed, or reference example 2 of the method in which ion beam processing and electron beam imaging work simultaneously during etching processing, electron beam imaging is turned on after the ion beam starts processing, and is quickly turned off after the processing is completed, the shapes of the processed nanogrooves are consistent with the preset shapes.

[0100] The present disclosure is not limited to the above-mentioned embodiments. For ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principles of the present disclosure, and these improvements and modifications are also considered to be within the scope of protection of the present disclosure. The contents not described in detail in this specification belong to the prior art known to professional and technical personnel in this field.

[0101] The above description is only the preferred embodiment of the present application and is not intended to limit the present application. For those skilled in the art, the present application may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. An optimization method for FIB-SEM dual-beam synchronous controllable processing of flexible materials, characterized in that: The thermal conductivity of the material is below 0.2 W / mK, The method comprises the following steps: Surface cleaning step: a step of cleaning the surface of the material by chemical or physical methods; Scanning electron microscope imaging step: placing the material in a sample chamber of a FIB-SEM double-beam microscope, adjusting the acceleration voltage and beam current of the scanning electron microscope for surface imaging, selecting feature points / marks and adjusting electrical parameters of the objective lens to achieve clear imaging at different magnifications, and obtaining initial morphological information of the surface of the material; Dual-beam centering adjustment step: on the basis of clear imaging of the material by scanning electron microscope, adjusting the acceleration voltage and beam current of the focused ion beam to perform ion beam imaging, finding characteristic points / marks and adjusting the electrical parameters of the electrostatic lens to achieve clear imaging at different magnifications, and then repeatedly switching the imaging windows of the focused ion beam and the scanning electron microscope to ensure that the characteristic points / marks are located at the center of the field of view of the FIB image and the SEM image respectively at the same magnification, finding the junction point of the focused ion beam, the scanning electron microscope and the material, and achieving dual-beam centering adjustment; Etching steps: switch to the ion beam window to preset the processing pattern, adjust the focused ion beam scanning mode, dosage and processing time as well as the scanning mode of the scanning electron microscope, use the scanning electron microscope to image the processing area to observe the processing process and morphology changes in real time, and use the focused ion beam to perform etching processing; In the etching step, ion beam processing and electron beam imaging work simultaneously, and electron beam imaging is turned on after the preset processing pattern and before the ion beam processing begins. In the etching step, the electron beam imaging is quickly turned off after the ion beam processing is completed.

2. The optimization method for FIB-SEM dual-beam synchronous controllable processing of flexible materials according to claim 1, wherein: In the etching step, the working voltage of the focused ion beam is 0.5 kV to 30 kV, and the working beam current of the focused ion beam is controlled between 10 pA and 100 pA.

3. The optimization method for FIB-SEM dual-beam synchronous controllable processing of flexible materials according to claim 1, wherein: In the etching step, the working voltage of the electron beam is 0.5 kV to 15 kV, and the working beam current of the electron beam is 30 pA to 10 nA.

4. The optimization method for FIB-SEM dual-beam synchronous controllable processing of flexible materials according to claim 1, wherein: The type of the focused ion beam is gallium ions.

5. The optimization method for FIB-SEM dual-beam synchronous controllable processing of flexible materials according to claim 1, further comprising: The step of gold plating the surface of the material is performed before the scanning electron microscope imaging step.

6. The optimization method for FIB-SEM dual-beam synchronous controllable processing of flexible materials according to claim 1, wherein: The material is a polymer.

7. The optimization method for FIB-SEM dual-beam synchronous controllable processing of flexible materials according to claim 6, wherein: The polymer is polydimethylsiloxane or polymethyl methacrylate.

8. Use of the optimization method for FIB-SEM dual-beam synchronous controllable processing of flexible materials according to any one of claims 1 to 7 in material processing.

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