SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD

Abstract

Semiconductor device comprising: a trench structure (150) extending from a first surface (101) into a silicon carbide semiconductor body (100), the trench structure (150) having parallel first stripe regions (161) and parallel second stripe regions (162) intersecting the first stripe regions (161), and portions of the silicon carbide semiconductor body (100) between the first and second stripe regions (161, 162) forming first and second mesa regions (190); a gate electrode (155) formed in the trench structure (150) and extending down to a bottom of the trench structure (150); a gate dielectric (153) between the gate electrode (155) and body regions (120) of transistor cells (TC) formed in the first mesa regions of the semiconductor body (100), the first mesa regions having source zones (110) of the transistor cells; a shielding region (140) adjoining the bottom of the trench structure (150) and forming a first pn junction (pn1) with a drift structure (130) in the semiconductor body (100), wherein the second mesa regions have diode regions (127) of a conductivity type of the shielding region (140), and wherein the diode regions (127) each extend along the trench structure (150) from the first surface (101) to the shielding region (140) and connect the shielding region (140) to a first load electrode (310) on the first surface (101); and a field dielectric (159), wherein a portion of the field dielectric (159) separates the shielding region (140) and the gate electrode (155), and wherein the field dielectric (159) has a greater thickness than the gate dielectric (153).

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