RADIANT-EMPLOYING COMPONENT AND METHOD FOR MANUFACTURING A RADIANT-EMPLOYING COMPONENT

Abstract

Radiation-emitting component (1) with - a carrier (2) which has a cavity (9), - a radiation-emitting semiconductor chip (3) arranged on a base surface bounding the cavity (9) and designed to generate primary electromagnetic radiation, and - a first reflector layer (6) arranged above a cover surface of the semiconductor chip (3), wherein - the carrier (2) is partially transparent to the primary electromagnetic radiation, - the support (2) has a side wall and a bottom, - the side wall has a cover surface that forms a cover surface of the support (2), and the bottom has a cover surface that forms the bottom surface bounding the cavity (9), - the top surface of the side wall and the top surface of the floor are connected to each other by at least one side surface of the support (2) which faces the cavity (9), - the top surface of the support (2) runs at an angle to the bottom surface of the support (2), - electromagnetic primary radiation escapes through at least one transparent side wall of the support (2), and - the semiconductor chip (3) is spaced away from at least one side surface that bounds the cavity (9).

Description

[0001] A radiation-emitting component is described. Furthermore, a method for manufacturing a radiation-emitting component is described.

[0002] German patent DE 10 2012 102 114 A1 describes a radiation-emitting semiconductor component, a lighting device, and a display device. German patent US 2012 / 0 012 872 A1 describes an LED package structure. German patent US 2015 / 0 369 997 A1 describes a light source module and a backlight unit comprising it. German patent US 2008 / 0 128 725 A1 describes a side-emitting LED.

[0003] One problem to be solved is to specify a radiation-emitting component that is particularly mechanically stable. Another problem to be solved is to specify a method for manufacturing such a radiation-emitting component.

[0004] This problem is solved by a radiation-emitting component according to claim 1 and a method according to claim 10. Further embodiments are the subject of the dependent claims.

[0005] A radiation-emitting component is specified. This radiation-emitting component is, for example, a component that emits electromagnetic radiation, particularly visible light, during operation. An example of a radiation-emitting component is a light-emitting diode (LED).

[0006] The radiation-emitting component has a principal plane of extension. The lateral directions are aligned parallel to the principal plane of extension, and the vertical direction is aligned perpendicular to the principal plane of extension.

[0007] The radiation-emitting component comprises a support structure with a cavity. The cavity penetrates the support structure, for example, partially, but not completely. The cavity is formed, for example, by at least one side wall and a bottom, each of which is part of the support structure. The at least one side wall and the bottom of the support structure are, for example, formed integrally.

[0008] For example, a top surface of the beam's base facing the cavity is planar. This top surface can be parallel to the main plane of the component. At least one side surface of the beam's side wall facing the cavity can be, for example, transverse or perpendicular to the top surface of the beam's base. This side surface can, for example, form an obtuse angle with the top surface of the beam's base. The obtuse angle between this side surface and the top surface of the base can be, for example, greater than 90° and less than 180°. Preferably, the angle is less than 135°.

[0009] Furthermore, at least one side surface facing the cavity can include at least one step. This means that at least one side surface of the beam can, for example, run parallel to the top surface of the beam's bottom surface in certain areas. Due to the at least one step, the cavity has, for example, a widening shape in the vertical direction, facing away from the top surface of the beam's bottom surface. This means that a cross-sectional area of ​​the cavity running parallel to the beam's bottom surface is smaller at a position below the at least one step, which is closer to the beam's bottom surface, than a cross-sectional area above the at least one step, which is farther away from the beam's bottom surface.If at least one side surface has, for example, two steps, then the cross-sectional area of ​​the cavity at the level of a first step, which is located closer to the bottom of the beam than a second step, is smaller than the cross-sectional area of ​​the cavity at the level of the second step. Each step has, for example, a horizontal surface that extends from the front edge of a step to the front edge of its buttress or riser and that runs, for example, parallel to the main extension plane of the component.

[0010] The substrate contains, for example, a plastic material such as epoxy or silicone, or a ceramic material, or is made of one of these materials. The substrate is, for example, a mechanically stabilizing component of the radiation-emitting component, which mechanically supports and carries other components of the component.

[0011] The radiation-emitting component comprises a radiation-emitting semiconductor chip located on the base surface defining the cavity and designed to generate primary electromagnetic radiation. The radiation-emitting semiconductor chip could, for example, be a volume emitter.

[0012] A volume-emitting, radiation-emitting semiconductor chip, for example, has a substrate on which a semiconductor body is epitaxially grown or deposited. The substrate can be made of, for example, one of the following materials: sapphire, silicon carbide, or glass. Volume-emitting, radiation-emitting semiconductor chips emit the generated radiation not only through a single light-emitting surface but also through at least one side surface. For example, in a volume emitter, at least 30% of the emitted radiation exits through at least one side surface. The radiation-emitting semiconductor chip could, for example, be a light-emitting diode (LED) chip.

[0013] The semiconductor body of the radiation-emitting semiconductor chip is designed, for example, to generate the primary electromagnetic radiation. This semiconductor body is, for instance, an epitaxially grown semiconductor body. The semiconductor body can be based on a III-V compound semiconductor material. The semiconductor body includes an active region, which may comprise a quantum well structure or a multiple quantum well structure. The active region is designed, for example, to generate the primary electromagnetic radiation.

[0014] The radiation-emitting semiconductor chip comprises, for example, a bottom surface that faces a top surface of the radiation-emitting semiconductor chip and that are connected by at least one side surface. The bottom surface of the radiation-emitting semiconductor chip is, for example, arranged on the top surface of the bottom of the substrate.

[0015] The radiation-emitting component comprises a first reflector layer arranged above a top surface of the semiconductor chip. The first reflector layer covers the top surface of the radiation-emitting semiconductor chip completely. Furthermore, the first reflector layer can extend beyond the radiation-emitting semiconductor chip in lateral directions. The first reflector layer includes, for example, a bottom surface opposite a top surface, and these surfaces are connected by at least one side surface.

[0016] At least one side surface of the first reflector layer is, for example, in direct and immediate contact with at least one side surface of the substrate facing the cavity. Furthermore, the bottom surface of the first reflector layer, facing the top surface of the radiation-emitting semiconductor chip, can be in direct and immediate contact with at least one side surface of the substrate facing the cavity in certain areas. This is possible, for example, because at least one side surface of the substrate facing the cavity can have at least one step. That is, the bottom surface of the first reflector layer can be arranged, for example, on the at least one side surface of the substrate that runs parallel to it in certain areas.

[0017] The base surface of the first reflector layer can, for example, be in direct and immediate contact with the top surface of the radiation-emitting semiconductor chip. Alternatively, the first reflector layer can be arranged vertically spaced from the radiation-emitting semiconductor chip.

[0018] The first reflector layer is designed, for example, to reflect the primary electromagnetic radiation emitted during the operation of the radiation-emitting semiconductor chip. The primary radiation, which is coupled out from the top surface of the radiation-emitting semiconductor chip during operation, can be reflected, for example, towards at least one side surface of the substrate or towards at least one side wall of the substrate.

[0019] The first reflector layer can be formed, for example, by a plastic or silicone filled with radiation-scattering and / or radiation-reflecting particles. The particles of the first reflector layer are, for example, titanium oxide particles.

[0020] Alternatively, it is possible that the first reflector layer is only partially reflective and that a small proportion of the primary electromagnetic radiation emitted by the semiconductor chip, for example at most 15%, passes through the first reflector layer.

[0021] The substrate is partially transparent to primary electromagnetic radiation. For example, the substrate contains a transparent plastic material, such as an epoxy or silicone, or a transparent ceramic material, or consists of one of these materials.

[0022] The primary electromagnetic radiation emitted during the operation of the radiation-emitting semiconductor chip, which is reflected at the first reflector layer of at least one side wall of the substrate, can, for example, escape through the at least one transparent side wall of the substrate.

[0023] If the first reflector layer is reflective, the radiation-emitting component acts as a side emitter. However, it is also possible that the first reflector layer is only partially reflective. In this case, the primary electromagnetic radiation emitted by the radiation-emitting semiconductor chip is also coupled out through the top surface of the first reflector layer.

[0024] The semiconductor chip is spaced apart from at least one cavity-bounding surface. This cavity-bounding surface is, for example, the at least one surface of the substrate facing the cavity. The semiconductor chip is not, for example, in direct contact with this surface. Another material may be positioned between the semiconductor chip and this surface. This other material may be, for example, a solid, a liquid, a gas, or a gas mixture, such as air.

[0025] The radiation-emitting component comprises a substrate with a cavity, a radiation-emitting semiconductor chip arranged on a base surface bounding the cavity and configured to generate primary electromagnetic radiation, and a first reflector layer arranged over a top surface of the semiconductor chip. The substrate is partially transparent to electromagnetic radiation, and the semiconductor chip is spaced from at least one side surface bounding the cavity.

[0026] A radiation-emitting semiconductor chip mounted on a substrate can be covered by various encapsulations. A connection surface between these encapsulations extends, for example, in lateral directions. This bond can be easily damaged by shear forces acting in these lateral directions. Furthermore, such shear forces can cause displacements between the encapsulations. Heat can build up at these displacements during operation. This negatively impacts not only the mechanical stability but also the thermal stability of the radiation-emitting component.

[0027] One aspect of the radiation-emitting component described here is to arrange the radiation-emitting semiconductor chip and the encapsulation bodies, comprising reflector and conversion layers, within the cavity of the substrate. The substrate is transparent. Shear forces occurring in lateral directions thus do not act directly on the connection surfaces of the encapsulation bodies in these directions. The substrate's sidewalls absorb the shear forces and protect the encapsulation bodies from displacement. Furthermore, the various encapsulation bodies can be arranged within the substrate cavity without the use of complex molding processes. This advantageously allows for the efficient manufacturing of the radiation-emitting components.

[0028] According to at least one embodiment, the semiconductor chip and the first reflector layer are arranged within the cavity. That is, the radiation-emitting semiconductor chip and the first reflector layer do not project above the substrate in the vertical direction. For example, the top surface of the first reflector layer forms a cavity-bounding surface. Furthermore, the bottom surface of the cavity is partially formed by the bottom surface of the radiation-emitting semiconductor chip. This means that the bottom surface, the top surface, and at least one side surface completely enclose the radiation-emitting semiconductor chip and the first reflector layer.

[0029] Shear forces acting on the radiation-emitting component from lateral directions do not displace the first reflector layer in relation to the radiation-emitting semiconductor chip, as the shear forces are absorbed by the side wall of the substrate.

[0030] According to at least one embodiment, a conversion layer is arranged between the semiconductor chip and the first reflector layer and is configured to convert a portion of the primary radiation into secondary radiation. The conversion layer has, for example, a top surface opposite a bottom surface, which is connected via at least one side surface. The top surface of the conversion layer is, for example, in direct and immediate contact with the bottom surface of the first reflector layer in certain areas. The at least one side surface of the conversion layer is, for example, in direct and immediate contact with the at least one side surface of the substrate facing the cavity. Furthermore, the bottom surface of the conversion layer can, for example, be in direct and immediate contact with the top surface of the radiation-emitting semiconductor chip.The base surface of the conversion layer is, for example, flat and thus flush with the top surface of the radiation-emitting semiconductor chip. Alternatively, it is possible that at least one side surface of the radiation-emitting semiconductor chip is also covered by the conversion layer.

[0031] The base surface of the conversion layer can, for example, be in direct and immediate contact with at least one side surface of the beam facing the cavity in certain areas. This is possible because at least one side surface of the beam facing the cavity can have at least one step. That is, the base surface of the conversion layer can, for example, be arranged on at least one side surface of the beam that runs parallel to it in certain areas.

[0032] The conversion layer, for example, converts primary electromagnetic radiation into secondary electromagnetic radiation. The conversion layer comprises, for example, a matrix material into which phosphor particles are embedded. This matrix material can be, for example, a resin such as an epoxy or silicone, or a mixture of these materials, or a ceramic material. The phosphor particles give the conversion layer its wavelength-converting properties.

[0033] For the phosphor particles, one of the following materials is suitable, for example: rare-earth-doped garnets, rare-earth-doped alkaline earth sulfides, rare-earth-doped thiogallates, rare-earth-doped aluminates, rare-earth-doped silicates, rare-earth-doped orthosilicates, rare-earth-doped chlorosilicates, rare-earth-doped alkaline earth silicon nitrides, rare-earth-doped oxynitrides, rare-earth-doped aluminum oxynitrides, rare-earth-doped silicon nitrides, rare-earth-doped silalones, or quantum dots. These materials can also be used without a matrix material. The conversion layer can then consist of one of these materials.

[0034] According to at least one embodiment, a second reflector layer completely surrounds at least one side face of the semiconductor chip. The second reflector layer is, for example, in direct and immediate contact with the at least one side face of the substrate that faces the cavity. Furthermore, a top surface of the second reflector layer, opposite a bottom surface, can be in direct and immediate contact with the bottom surface of the conversion layer. The bottom surface of the second reflector layer can, for example, be in direct and immediate contact with the bottom surface of the substrate.

[0035] The second reflector layer can be formed, for example, by a plastic or silicone filled with radiation-scattering and / or radiation-reflecting particles. The particles in the second reflector layer are, for example, titanium oxide particles.

[0036] Alternatively, it is possible that the second reflector layer is only partially reflective and that a small proportion, for example at most 15%, of the primary electromagnetic radiation emitted by the semiconductor chip passes through the second reflector layer.

[0037] The first and second reflector layers are designed, for example, to reflect a portion of the primary electromagnetic radiation. The first and second reflector layers preferably exhibit a reflectivity of at least 90% for primary electromagnetic radiation generated in the active region.

[0038] According to at least one embodiment, the second reflector layer is in direct contact with at least one side face of the semiconductor chip. If, for example, the radiation-emitting semiconductor chip is a volume-emitting semiconductor chip, the primary electromagnetic radiation emitted during operation, which exits from at least one side face of the semiconductor body, is reflected back and can, for example, be reflected towards the conversion layer. That is, the primary electromagnetic radiation that is reflected from at least one side face of the semiconductor body towards the top face of the semiconductor body and enters the conversion layer from the top face of the semiconductor body is partially converted into secondary radiation.The first reflective layer reflects the primary and secondary electromagnetic radiation again, so that the primary radiation enters the conversion layer again and can be partially converted again.

[0039] The primary and secondary radiation reflected at the first reflector layer can, for example, be reflected again at the top surface of the second reflector layer. This means that the primary and secondary radiation are directed by the first and second reflector layers, for example, towards at least one side surface of the substrate facing the cavity. This advantageously increases the light extraction from at least one side wall of the substrate.

[0040] According to at least one embodiment, the carrier has at least two contact surfaces on a base surface, and the semiconductor chip is electrically contacted via these at least two contact surfaces. The at least two contact surfaces are, for example, integrated into the base surface of the carrier. Each contact surface has a top surface opposite a base surface, and these surfaces are connected by at least one side surface. The top surface and the base surface of the at least two contact surfaces are, for example, flush with the top surface and the base surface of the base of the carrier. The base surface of the radiation-emitting semiconductor chip is, for example, electrically connected to the top surface of one contact surface. The top surface of the radiation-emitting semiconductor chip is, for example, electrically connected to the top surface of another contact surface by means of a wire connection.The contact surfaces may, for example, contain or be made of a metal. The metal could be, for example, silver or copper.

[0041] Alternatively, the radiation-emitting semiconductor chip could be a flip chip. This type of chip might have, for example, two contact pads on its base. These two contact pads are then each located on the top surface of a contact pad. Each contact pad is electrically connected to another contact pad.

[0042] A top surface of the beam is inclined to a bottom surface of the beam. The top surface of the beam is, for example, the top surface of at least one side wall of the beam. The bottom surface of the beam is, for example, defined by the bottom surface of the beam. The bottom surface of the beam is essentially parallel to the principal plane of extension. The top surface of the beam is, for example, inclined to the bottom surface of the beam. An angle between the top surface of the beam facing the bottom surface of the beam and the bottom surface of the beam facing the top surface of the beam can, for example, be greater than 0° and less than 90°. Preferably, the angle is less than 45°.

[0043] Areas of the first reflector layer are, for example, arranged on the inclined top surface of the support and are in direct and immediate contact with it. The top surface of the first reflector layer is, for example, flat. That is, the base surface of the first reflector layer has the same slope as the top surface of the support. In addition, the top surface of the first reflector layer is flush with the top surface of the support where the radiation-emitting component has its greatest vertical extent.

[0044] The first reflector layer completely covers the substrate. This prevents primary and secondary electromagnetic radiation from escaping through the substrate's surface. The angled surface protects the radiation-emitting component against shear forces acting in lateral directions. For example, if a force acts laterally on the radiation-emitting component, it does not act parallel to a junction between at least one side wall of the substrate and the first reflector layer. Advantageously, this protects the radiation-emitting component from damage caused by shear forces.

[0045] According to at least one embodiment, the carrier has a reflective part and a transparent part. The base of the carrier is, for example, reflective for the primary radiation emitted by the semiconductor chip. The at least one side wall of the carrier is, for example, transparent for both primary and secondary radiation. The parts can, for example, be formed integrally.

[0046] According to at least one embodiment, the reflective part of the carrier comprises a side wall and a base, and a top surface of the side wall of the reflective part of the carrier extends obliquely to a base surface of the base of the reflective part of the carrier, the parts being formed integrally. That is, the base of the carrier and a portion of the at least one side wall of the carrier are designed to reflect the primary radiation emitted by the radiation-emitting semiconductor chip. The reflective base of the carrier and the at least one reflective side wall of the carrier are integrally connected.

[0047] The top surface of at least one reflective side wall is, for example, inclined to the bottom surface of the support. The angle between the top surface of the reflective part of the support and the bottom surface of the support can be, for example, greater than 0° and less than 90°. Preferably, the angle is less than 45°.

[0048] According to at least one embodiment, a top surface of the transparent part of the support is inclined to the bottom surface of the base of the reflective support. A further part of at least one side wall of the support is, for example, transparent to primary and secondary radiation and is arranged on the reflective part of the side wall of the support.

[0049] The top surface of the transparent part of the support is, for example, the top surface of the transparent part of at least one side wall of the support. This top surface is, for example, inclined to the bottom surface of the support. An angle between the top surface of the transparent part of the support facing the bottom surface of the support and the bottom surface of the support facing the top surface of the transparent part of the support can, for example, be greater than 0° and less than 90°. Preferably, the angle is less than 45°.

[0050] A bottom surface opposite the top surface of at least one side wall of the transparent part preferably has the same slope and is in direct and immediate contact with the sloped top surface of at least one reflective side wall of the support. The two slopes are, for example, of the same magnitude.

[0051] The support structure, for example, is not formed in one piece. Due to the angled connection of at least one reflective and transparent side wall of the support, the radiation-emitting component is protected against shear forces acting in lateral directions. For instance, if a force acts laterally on the radiation-emitting component, it does not act parallel to a connecting surface of the at least one reflective and transparent side wall of the support. Advantageously, the radiation-emitting component is thus protected against damage from shear forces.

[0052] Furthermore, a method for manufacturing a radiation-emitting component is disclosed. The method is preferably suitable for manufacturing a radiation-emitting component as described herein. That is to say, a radiation-emitting component as described herein can be manufactured using the described method or is manufactured using the described method. All features disclosed in connection with the radiation-emitting component are therefore also disclosed in connection with the method, and vice versa.

[0053] The process includes the step of providing a substrate that has a cavity. The cavity can be created, for example, by removing material from the substrate. Alternatively, the cavity can be created as a recess, for example, using a suitable casting process.

[0054] It is possible that, as a first step, a base of the support, which is, for example, reflective, is provided. In a next step, at least one side wall of the support, which is, for example, transparent, is applied to a section of the top surface of the reflective base of the support.

[0055] Alternatively, in a first process step, a reflective base of the support and a reflective portion of at least one side wall of the support are provided. In a subsequent step, for example, the remaining reflective portion of at least one side wall of the support is then applied to a top surface of the reflective at least one side wall of the support.

[0056] The at least one transparent side wall is applied to the reflective base or to the at least one reflective side wall, for example, by means of a spraying or casting process.

[0057] The process comprises the step of depositing a radiation-emitting semiconductor chip onto the substrate at a base surface that defines the cavity, with the semiconductor chip being spaced apart from a side surface that also defines the cavity. The substrate includes, for example, at least two contact surfaces that contain or consist of a metal. The semiconductor chip also includes at least two contact surfaces that contain or consist of a metal. The contact surfaces can be attached to each contact surface, for example, by gluing, bonding, or soldering. This connection secures the semiconductor chip to the substrate.

[0058] The process includes the step of applying a first reflector layer over the semiconductor chip.

[0059] For example, the material for the first reflector layer is introduced into the cavity. This material is typically in a flowable form. In this case, the material is cured after application. Furthermore, the material for the first reflector layer can be applied using methods such as spraying, screen printing, or doctor blade application.

[0060] According to at least one embodiment, the method comprises the step of applying a second reflector layer after the semiconductor chip has been applied, wherein the second reflector layer covers a side surface of the semiconductor chip.

[0061] For example, a material for the second reflector layer is introduced into the cavity. This material is typically in a flowable form. In this case, the material is cured after application. Furthermore, the material for the second reflector layer can be applied using methods such as spraying, screen printing, or doctor blade application.

[0062] The second reflector layer, for example, does not cover the top surface of the radiation-emitting semiconductor chip. This means that the top surface of the radiation-emitting semiconductor chip is essentially free of the second reflector layer. Essentially free means that, due to the manufacturing process, small amounts of the second reflector layer are present on the top surface of the radiation-emitting semiconductor chip.

[0063] According to at least one embodiment, the method comprises the step of applying a conversion layer to the semiconductor chip and to the second reflector layer after the second reflector layer has been applied.

[0064] A conversion material for the conversion layer is introduced into the cavity. This conversion material is typically in a flowable form. In this case, the conversion material is cured after application to form the conversion layer. Furthermore, the conversion material can be applied using methods such as spraying, screen printing, or doctor blade application.

[0065] The following section provides a more detailed explanation of the radiation-emitting component and the method described here, using exemplary embodiments and the associated figures.

[0066] They show: Fig. 1. Schematic sectional views of an exemplary embodiment of a radiation-emitting component described here, Fig. 2A, Fig. 2B, Fig. 2C, Fig. 2D and Fig. 2E Schematic sectional views of process steps of an embodiment of a process described here for the manufacture of a radiation-emitting component, Fig. 3 schematic sectional views of an exemplary embodiment of a radiation-emitting component described here, Fig. 4A, Fig. 4B, Fig. 4C, Fig. 4D, Fig. 4E and Fig. 4F Schematic sectional views of process steps of an embodiment of a process described here for the manufacture of a radiation-emitting component, Fig. 5 schematic sectional views of an exemplary embodiment of a radiation-emitting component described here, Fig. 6A, Fig. 6B, Fig. 6C, Fig. 6D, Fig. 6E and Fig. 6F Schematic sectional views of process steps of an embodiment of a process described herein for the manufacture of a radiation-emitting component.

[0067] Identical, similar, or similarly effective elements in the figures are marked with the same reference symbols. The figures and the relative sizes of the elements depicted within them are not to be considered to scale. Rather, individual elements may be exaggerated for clarity and / or to improve representation.

[0068] The schematic sectional view of the Fig. Figure 1 shows an embodiment of a radiation-emitting component described here.

[0069] The radiation-emitting component 1 comprises a support 2, which has a cavity 9. The support 2 has, for example, a bottom and a side wall. The bottom 2a and the side wall 2b of the support 2 are formed in one piece. A side surface of the side wall 2b of the support 2, which faces the cavity 9, has two steps 22. The bottom 2a of the support 2 comprises a top surface and an opposing bottom surface. Two contact surfaces 7 are incorporated into the bottom 2a of the support 2. The contact surfaces 7 also have a top surface opposite a bottom surface, which are connected to each other via a side surface. The top surfaces of the contact surfaces 7 are flush with the top surface of the bottom 2a of the support 2. The bottom surfaces of the contact surfaces 7 are also flush with the bottom surface of the bottom 2a of the support 2.

[0070] Furthermore, the radiation-emitting component 1 comprises a radiation-emitting semiconductor chip 3. The semiconductor chip 3 has a top surface opposite a bottom surface, which are connected to each other via a side surface. The bottom surface of the semiconductor chip 3 is positioned on the top surface at one of the contact surfaces 7 and electrically connected to it. The radiation-emitting semiconductor chip 3 can be energized via these contact surfaces from the bottom surface of the radiation-emitting semiconductor chip 3. Additionally, the top surface of the radiation-emitting semiconductor chip is electrically connected to the top surface of the other contact surface 7 by means of a bond wire 8.

[0071] A second reflector layer 4 completely surrounds at least one side surface of the radiation-emitting semiconductor chip 3. This at least one side surface of the radiation-emitting semiconductor chip 3 is in direct and immediate contact with the second reflector layer 4. Furthermore, the second reflector layer 4 is in direct and immediate contact with the top surface of the base 2a of the carrier 2 and the top surfaces of the contact surfaces 7. Additionally, at least one side surface of the side wall 2b of the carrier 2, which faces the cavity 9, is in partial direct and immediate contact with the second reflector layer 4. One top surface of the second reflector layer 4 is flush with a first step.

[0072] A conversion layer 5 is arranged above the top surface of the second reflector layer 4 and the top surface of the radiation-emitting semiconductor chip 3. The conversion layer 5 is in direct and immediate contact with the top surface of the second reflector layer 4 and the top surface of the radiation-emitting semiconductor chip 3. Furthermore, the conversion layer 5 is in direct and immediate contact in certain areas with the side surface of the side wall 2b of the carrier 2, which faces the cavity 9. One top surface of the conversion layer 5 is flush with a second stage.

[0073] A first reflector layer 6 is arranged above the conversion layer 5. The first reflector layer 6 is in direct contact with the top surface of the conversion layer 5. Furthermore, the first reflector layer 6 is in direct contact in certain areas with the side surface of the side wall 2b of the carrier 2, which faces the cavity 9. A top surface of the first reflector layer 6 is flush with a top surface of the side wall 2b of the carrier 2. The first reflector layer 6, the conversion layer 5, the radiation-emitting semiconductor chip 3, and the second reflector layer 4 are arranged within the cavity 9.

[0074] In connection with the Fig. Figures 2A to 2E represent an embodiment of a manufacturing process for a radiation-emitting component described herein, in accordance with the previous embodiment.

[0075] According to Fig. In a first process step, the transparent support 2, which has the cavity 9, is provided. The base 2a of the support comprises two contact surfaces 7. The side wall 2b and the base 2a of the support 2 are formed in one piece.

[0076] According to Fig. In the next process step 2B, the radiation-emitting semiconductor chip 3 is positioned on a base surface that bounds the cavity 9. The semiconductor chip 3 is positioned with its base surface against the top surface of a contact surface 7 and electrically connected. The top surface of the semiconductor chip 3 is electrically connected to the top surface of another contact surface 7 by means of a wire connection 8.

[0077] According to Fig. In the next process step, a second reflective layer 4 is arranged laterally to the side of the radiation-emitting semiconductor chip 3 and on a bottom surface that bounds the cavity 9. The top surface of the second reflective layer 4 is flush with the top surface of the radiation-emitting semiconductor chip 3.

[0078] According to Fig. In the next process step, a conversion layer 5 is arranged over the second reflection layer 4 and the radiation-emitting semiconductor chip 3.

[0079] According to Fig. In the next process step, a first reflector layer 6 is arranged above the conversion layer 5.

[0080] The schematic sectional view of the Fig. Figure 3 shows an embodiment of a radiation-emitting component described herein. In contrast to the embodiment shown in the Fig. As shown in Figure 1, the support 2 has a reflective base 2c and a transparent side wall 2d.

[0081] In connection with the Fig. Figures 4A to 4F represent an embodiment of a manufacturing process for a radiation-emitting component described herein, in accordance with the previous embodiment.

[0082] According to Fig. In a first process step, 4A provides the reflective base 2c of the support 2. This comprises two contact surfaces 7.

[0083] According to Fig. In the next process step, a transparent side wall 2d is applied to the reflective base 2c of the support 2. The transparent side wall 2d can be applied by means of a casting process.

[0084] According to Fig. 4C to 4F are further process steps analogous to those in Fig. 2B to 2E are shown.

[0085] The schematic sectional view of the Fig. Figure 5 shows an embodiment of a radiation-emitting component described herein. In contrast to the embodiment shown in the Fig. As shown in Figure 3, the support 2 has a reflective base 2c and a side wall that is partially reflective. The reflective base 2c and the reflective part of the side wall are formed in one piece. Furthermore, the top surface of the reflective part of the side wall is inclined relative to the top surface of the base of the support 2. A transparent side wall 2d is arranged above the reflective part of the side wall. This side wall also has a top surface that is inclined relative to the top surface of the base of the support 2.

[0086] In connection with the Fig. Figures 6A to 6F illustrate an embodiment of a manufacturing process for a radiation-emitting component described herein, as described in the previous embodiment. Fig. 6A to 6F are further procedural steps analogous to those in Fig. 4A to 4F are shown. Reference symbol list 1 radiation-emitting component 2 carriers 2a Bottom of the support 2b Side wall of the support Level 22 2c reflective base of the carrier 2D transparent side wall of the carrier 3 radiation-emitting semiconductor chip 4 second reflector layer 5 Conversion layer 6 first reflector layer 7 Contact area 8 wire connection 9 Cavity

Claims

[1] Radiation-emitting component (1) with - a carrier (2) which has a cavity (9), - a radiation-emitting semiconductor chip (3) arranged on a base surface bounding the cavity (9) and designed to generate primary electromagnetic radiation, and - a first reflector layer (6) arranged above a cover surface of the semiconductor chip (3), wherein - the carrier (2) is partially transparent to the primary electromagnetic radiation, - the support (2) has a side wall and a bottom, - the side wall has a cover surface that forms a cover surface of the support (2), and the bottom has a cover surface that forms the bottom surface bounding the cavity (9), - the top surface of the side wall and the top surface of the floor are connected to each other by at least one side surface of the support (2) which faces the cavity (9), - the top surface of the support (2) runs at an angle to the bottom surface of the support (2), - electromagnetic primary radiation escapes through at least one transparent side wall of the support (2), and - the semiconductor chip (3) is spaced away from at least one side surface that bounds the cavity (9). [2] Radiation-emitting component (1) according to the preceding claim, wherein the semiconductor chip (3) and the first reflector layer (6) are arranged within the cavity (9). [3] Radiation-emitting component (1) according to one of the preceding claims, in which a conversion layer (5) is arranged between the semiconductor chip (3) and the first reflector layer (6) and is configured to convert part of the primary radiation into secondary radiation. [4] Radiation-emitting component (1) according to one of the preceding claims, wherein a second reflector layer (4) completely surrounds at least one side surface of the semiconductor chip (3). [5] Radiation-emitting component (1) according to the previous claim, wherein the second reflector layer (4) is in direct contact with at least one side surface of the semiconductor chip (3). [6] Radiation-emitting component (1) according to one of the preceding claims, wherein the carrier (2) has at least two contact surfaces (7) on a bottom surface and the semiconductor chip (3) is electrically conductively contacted via the at least two contact surfaces (7). [7] Radiation-emitting component (1) according to one of the preceding claims, wherein the carrier (2) has a reflective part and a transparent part. [8] Radiation-emitting component (1) according to the preceding claim, wherein - the reflective part of the carrier (2) comprises a side wall and a bottom, and - a top surface of the side wall of the reflective part of the carrier (2) runs obliquely to a bottom surface of the bottom of the reflective part of the carrier (2), the parts being formed integrally together. [9] Radiation-emitting component according to one of the previous two claims, wherein a top surface of the transparent part of the support (2) extends obliquely to the bottom surface of the bottom of the reflecting support (2). [10] Method for manufacturing a radiation-emitting component (1) comprising the following steps: - Providing a carrier (2) having a cavity (9), - Applying a radiation-emitting semiconductor chip (3) to the support (2) at a bottom surface bounding the cavity (9), wherein the semiconductor chip (3) is spaced apart from a side surface bounding the cavity (9), and - Applying a first reflector layer (6) over the semiconductor chip (3), wherein - the carrier (2) is partially transparent to the primary electromagnetic radiation, - the support (2) has a side wall and a bottom, - the side wall has a cover surface that forms a cover surface of the support (2), and the bottom has a cover surface that forms the bottom surface bounding the cavity (9), - the top surface of the side wall and the top surface of the floor are connected to each other by at least one side surface of the support (2) which faces the cavity (9), - the top surface of the support (2) runs at an angle to the bottom surface of the support (2), - electromagnetic primary radiation escapes through at least one transparent side wall of the support (2), and - the semiconductor chip (3) is spaced away from at least one of the side surfaces bounding the cavity (9). [11] Method according to the previous claim, wherein after the application of the semiconductor chip (3) a second reflector layer (4) is applied, the second reflector layer (4) covering a side surface of the semiconductor chip (3). [12] Method according to the previous claim, wherein after the application of the second reflector layer (4) a conversion layer (5) is applied to the semiconductor chip (3) and to the second reflector layer (4).

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