Organic light-emitting indicator device, having a head-mounted indicator, and method for manufacturing the same.

Abstract

Organic light-emitting display device (100), comprising: an insulating layer (117); first electrodes (121) which are arranged on the insulating layer (117) and are spaced apart from each other by a gap; a planarization layer (150) on the first electrodes (121); an organic light-emitting layer (130) on the first electrodes (121); and a second electrode (140) on the organic light-emitting layer (130), wherein the insulating layer (117) has a groove (T) in the gap between the first electrodes (121), wherein the organic light-emitting layer (130) has a first stack (130a) on the first electrodes (121), a charge-generating layer (130b) on the first stack (130a) and a second stack (130c) on the charge-generating layer (130b), wherein each of the stacks (130a, 130c) has a hole transport layer, at least one emitting material layer and an electron transport layer, the first stack (130a) has a discontinuous section in the trench (T), the planarization layer (150) has a first area (A1) that covers an edge section of an upper surface of each first electrode (121), and a second area (A2) that completely covers a side surface of each first electrode (121), and the first stack (130a), the charge generation layer (130b) and the second stack (130c) are arranged successively on the second area (A2) of the planarization layer (150).

Description

BACKGROUND OF THE INVENTION Area of ​​the invention

[0001] The present disclosure relates to an organic light-emitting display device and in particular to an organic light-emitting display device, a head-mounted display comprising the organic light-emitting display device, and a method for manufacturing the organic light-emitting display device. Description of the related prior art

[0002] As the information age progresses, display devices capable of processing and displaying large amounts of information have advanced rapidly. Recently, various display devices have been used, such as liquid crystal displays (LCDs), plasma display panels (PDPs), and organic light-emitting displays (OLEDs).

[0003] Of the various display devices, the OLED (optical emitting light) device offers advantages in viewing angle and contrast ratio compared to the LCD. Since an additional backlight unit is not required, the OLED device is lightweight, thin-profile, and consumes little power. Furthermore, the OLED device operates at a low DC voltage and has a fast response time. In particular, the OLED device has low manufacturing costs.

[0004] The OLED device comprises an anode, a bank layer that divides the anode, a high-hole transport layer (HTL) on the anode, an organic light-emitting layer (EML) on the HTL, an electron transport layer (ETL) on the EML, and a cathode on the EML. When a high voltage and a low voltage are applied to the anode and cathode, respectively, a hole and an electron move through the HTL and EML and combine to emit light.

[0005] Recently, a head-mounted display (HMD) using an OLED device was developed. The HMD can be a glass-type display for virtual reality (VR) or augmented reality (AR), where a focus is formed at close range to the user's eye. The user can wear the HMD as glasses or a helmet. A small, high-resolution OLED device can be used in the HMD. This small, high-resolution OLED device can be an organic light-emitting diode on silicon (OLEDoS) produced via a semiconductor process on a wafer. An anode is formed on an insulating layer covering a transistor formed on the wafer. Current flows through an organic light-emitting layer on the anode, but can also cause side leakage current that affects a neighboring pixel.Furthermore, due to a step between the anode and the insulating layer, the organic light-emitting layer is not uniformly formed at one edge of the anode. Therefore, the anode can be short-circuited with the cathode or a charge-generating layer of the organic light-emitting layer.

[0006] US patent US 8,981,352 B2 discloses a "display unit having a groove between organic EL [electroluminescence] devices". The display unit of US 8,981,352 B2 (e.g., Fig. 4 and Fig. 5) has a plurality of organic EL devices (10R, 10B, 10G) on a substrate (11) and an insulating film (20) provided between the organic EL devices. Each EL device contains a first electrode (13). The EL devices share a second electrode (cathode 15) and an organic layer (14) located between the first and second electrodes. The insulating film (20) contains a groove (30) located between the adjacent organic EL devices. The groove (30) locally reduces the thickness of the organic layer (14) and thus increases the electrical resistance of the organic layer (14) to suppress drive current loss between adjacent organic EL devices (columns 1 and 2, “Summary”).The organic layer (14) has a single EL stack of conventional layers (14A, 14B, 14C, 14D) between the insulating layer (20) and the second electrode (15): a hole injection layer (14A), a hole transport layer (14B), a light-emitting layer (14C), and an electron transport layer (14D).

[0007] EP 2 955 766 A1 describes an organic light-emitting display device comprising an anode, a cathode, a plurality of organic layers and a separating element, wherein the plurality of organic layers are arranged between the anode and the cathode, wherein at least one layer is separated to minimize leakage current into adjacent pixels, wherein the separating element is arranged between the adjacent pixels and is configured to separate the plurality of organic layers, and the at least one separated layer has a charge-generating layer. SUMMARY OF THE INVENTION

[0008] Accordingly, the present disclosure relates to an organic light-emitting display device, a head-mounted display comprising such device, and a method for manufacturing the same, which substantially eliminate one or more of the problems arising from limitations and disadvantages of the prior art.

[0009] In accordance with the present disclosure, as embodied and broadly described herein, the present disclosure provides an organic light-emitting display device according to claim 1, a head-mounted display comprising the organic light-emitting display device according to claim 11, and a method for manufacturing the same according to claim 12. In accordance with the present disclosure, as embodied and broadly described herein, the present disclosure provides an organic light-emitting display device that prevents a short circuit between an anode and a cathode or a charge-generating layer of an organic light-emitting layer and prevents lateral leakage current. The present disclosure further provides a head-mounted display comprising the organic light-emitting display device and provides a method for manufacturing the organic light-emitting display device.

[0010] In a first aspect, the present disclosure provides an organic light-emitting display device comprising: an insulating layer; first electrodes arranged on the insulating layer and spaced apart from each other by a gap; a planarization layer on the first electrodes; an organic light-emitting layer on the first electrodes; and a second electrode on the organic light-emitting layer, wherein the insulating layer has a trench in the gap between the first electrodes, and wherein the organic light-emitting layer has a first stack on the first electrodes, a charge-generating layer on the first stack, and a second stack on the charge-generating layer, and wherein each of the stacks has a hole-transport layer, at least one layer of emitting material, and an electron-transport layer, the first stack having a discontinuous section in the trench.The planarization layer has a first region that covers an edge section of a top surface of each first electrode, and a second region that completely covers a side surface of each first electrode, and the first stack, the charge generation layer, and the second stack are arranged sequentially on the second region of the planarization layer.

[0011] The interruption of the first stack in the trench minimizes leakage current between adjacent pixels, even if the second stack is uninterrupted. The second stack allows a second color of light to be emitted by the organic light-emitting layer. Both stacks can efficiently share a charge-generating layer.

[0012] At least one, or at least some, preferably all, of the layers of the second pile can extend uninterrupted across the trench.

[0013] The charge generation layer may have a discontinuous section in the trench to further reduce any leakage current between adjacent pixels.

[0014] In another aspect, the present disclosure provides a head-mounted display comprising: a display housing; a lens for the left eye and a lens for the right eye in the display housing; at least one organic light-emitting display device providing at least one image to the lens for the left eye and the lens for the right eye; and a headband connected to the display housing, wherein the at least one organic light-emitting display device comprises any one of claims 1 to 10.

[0015] In another aspect, the present disclosure provides a method for manufacturing an organic light-emitting display device, comprising: forming an insulating layer on a substrate; forming first electrodes on the insulating layer, the first electrodes being spaced apart from one another by a gap; forming a planarization layer on the first electrodes; forming an organic light-emitting layer on the first electrodes; forming a second electrode on the organic light-emitting layer and forming a trench in the insulating layer in the gap between the first electrodes, wherein the formation of an organic light-emitting layer comprises the formation of a first stack on the first electrodes, a charge-generating layer on the first stack and a second stack on the charge-generating layer, and wherein the formation of the first stack comprises the formation of a hole transport layer.comprising at least one emitting material layer and one electron transport layer and the formation of a discontinuous section of the first stack in the trench, and wherein the formation of the second stack comprises the formation of a hole transport layer, at least one emitting material layer and one electron transport layer, wherein the planarization layer has a first region covering an edge section of a top surface of each first electrode and a second region completely covering a side surface of each first electrode, and wherein the first stack, the charge generation layer and the second stack are arranged sequentially on the second region of the planarization layer.

[0016] It is understood that both the preceding general description and the following detailed description are exemplary and explanatory and are intended to provide a further explanation of the claimed embodiments. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The accompanying drawings, which are included to provide a further understanding of the disclosure and form part of this description, represent embodiments and, together with the description, serve to explain the principles of the disclosure. The drawings show: Fig. 1 A perspective view showing an organic light-emitting display device in which the invention can be implemented. Fig. 2 a cross-sectional view along a line II' of Fig. 1. Fig. 3A and Fig. 3B Enlarged views of section A of Fig. 2. Fig. 4 a flowchart showing a method for manufacturing an organic light-emitting display device according to the present disclosure. Fig. Sectional views 5A to 5H showing a method for manufacturing an organic light-emitting display device according to a first embodiment of the present disclosure. Fig. 6 a cross-sectional view showing an organic light-emitting display device according to another embodiment of the present disclosure. Fig. Figures 7A to 7D show cross-sectional views illustrating a method for manufacturing an organic light-emitting display device according to a second embodiment of the present disclosure. Fig. Sections 8A to 8E show cross-sectional views illustrating a method for manufacturing an organic light-emitting display device according to a third embodiment of the present disclosure. Fig. 9A and Fig. 9B Cross-sectional views showing a method for manufacturing an organic light-emitting display device according to a fourth embodiment of the present disclosure. Fig. Figure 10 presents photographs showing experimental results of a trench (sixth trench T) of an organic light-emitting display device according to one of the first to fourth embodiments of the present disclosure. Fig. 11 a graph showing experimental results of the sixth trench of an organic light-emitting display device according to one of the first to fourth embodiments of the present disclosure. Fig. 12 a graph showing simulation results of the sixth trench of an organic light-emitting display device according to one of the first to fourth embodiments of the present disclosure. Fig. 13 a top view showing an organic light-emitting display device according to one of the first to fourth embodiments of the present disclosure. Fig. 14A and Fig. 14B a perspective view and a top view showing a head-mounted display with an organic light-emitting display device according to one of the first to fourth embodiments of the present disclosure. Fig. 15 a top view showing a head-mounted display comprising an organic light-emitting display device according to one of the first to fourth embodiments of the present disclosure. Fig. Figure 16 is a cross-sectional view showing a head-mounted display comprising an organic light-emitting display device according to one of the first to fourth embodiments of the present disclosure. DETAILED DESCRIPTION OF PREFERRED EXECUTION FORMS

[0018] Some embodiments of the present disclosure are described in detail below with reference to the accompanying illustrative drawings. When designating elements of the drawings with reference numerals, identical elements are designated with the same reference numerals even if they are shown in different drawings. Furthermore, in the following description of the present disclosure, a detailed description of known functions and configurations contained herein is omitted if it might further obscure the subject matter of the present disclosure.

[0019] Since a shape, a size, a ratio, an angle and a number shown in the drawings to illustrate embodiments of the present disclosure are exemplary, the present disclosure is not limited to the content of the drawings.

[0020] In cases where a specific structural element is described as "possessing," "having," or "containing," other elements can be added, except when "only" is used. An element expressed as a singular entity has multiples, except in cases with a specific description.

[0021] When an element is constructed, the element contains an error area even without a specific description.

[0022] When a positional relationship between two parts is illustrated using "on", "above", "below" and "next to", at least one part can be positioned between the two parts, except in the case that uses "straight" and "direct".

[0023] If a temporal relationship is illustrated with "afterwards", "subsequently", "next" and "before", a case that is not sequential may be included, except for the case that uses "straight ahead" and "directly".

[0024] Although "first" and "second" can be used to illustrate different elements, the elements are not limited by the word. The word is used to distinguish one element from the others. Accordingly, a first element can be a second element and vice versa.

[0025] A relationship of “an X-axis direction”, “a Y-axis direction” and “a Z-axis direction” is not interpreted as a geometrically vertical relationship; the relationship can be interpreted to have a broad directionality within a range in which the present disclosure operates functionally.

[0026] The phrase "at least one" should be interpreted as including all combinations suggested by at least one related item. For example, "at least one by a first item, a second item, and a third item" can mean all combinations suggested by two or more of the first, second, and third items, as well as each of the first, second, and third items.

[0027] Features of different embodiments of the present disclosure can be combined or partially or completely integrated and can be technically communicated and controlled. The embodiments can be implemented independently or together.

[0028] Fig. Figure 1 is a perspective view showing an organic light-emitting display device according to a first embodiment of the present disclosure. Although Fig. 1. An organic light-emitting display (OLED) device as an organic light-emitting diode on silicon (OLEDoS) in which an organic light-emitting diode is formed on a wafer by a semiconductor process, the present disclosure is not limited to a particular type of OLED device.

[0029] In Fig. 1 comprises an organic light-emitting display (OLED) device 100 according to a first embodiment of the present disclosure, comprising a wafer substrate 110, first electrodes 121, an organic light-emitting layer 130, a second electrode 140 and an encapsulation layer 180.

[0030] The wafer substrate 110 can be a silicon wafer substrate formed using a semiconductor process. The wafer substrate 110 can have a gate line, a data line, and a transistor. The gate line and the data line can be arranged to cross each other. The gate line can be connected to a gate driver unit to receive a gate signal. The data line can be connected to a data driver unit to receive a data signal.

[0031] An area in which the first electrodes 121, the organic light-emitting layer 130, and the second electrode 140 are sequentially formed can be defined as a pixel. For example, the first electrodes 121 are spaced apart from each other by a gap equal to or less than approximately 0.7 µm. Since the first electrodes 121 are spaced apart on the wafer substrate 110, the pixel can be divided by the first electrodes 121. N transistors (N being a positive integer) can be arranged in the pixel, and a voltage is applied to the first electrode 121 according to the data signal of the data line when the gate signal of the gate line is applied to the N transistors.

[0032] The organic light-emitting layer 130 can be configured to cover the wafer substrate 110 and the first electrode 121. The organic light-emitting layer 130 can be a single layer formed across all pixels.

[0033] The second electrode 140 can be configured to cover the organic light-emitting layer 130. The second electrode 140 can be a common layer formed jointly across all pixels.

[0034] The encapsulation layer 180 can be configured to cover the second electrode 140. The encapsulation layer 180 can serve to prevent the penetration of oxygen and moisture into the organic light-emitting layer 130 and the second electrode 140.

[0035] Fig. 2 is a cross-sectional view along a line II' of Fig. 1 and Fig. 3A and Fig. 3B are enlarged views of section A of Fig. 2. For the sake of simplicity, it shows Fig. 2 (and Fig. 5H, Fig. 6 and Fig. 7D) the organic light-emitting layer 130 in the trench T as continuous. However, in embodiments of the present disclosure, at least one of the layers 130a and / or 130b in the organic light-emitting layer 130 in the trench T is interrupted, as shown in the enlarged views of the Fig. 3A or Fig. 3B is shown.

[0036] In the Fig. 2, Fig. 3A and Fig. 3B transistors 111 are formed on the wafer substrate 110. Each of the transistors 111 has an active layer 111a, a gate electrode 111b, a source electrode 111c, and a drain electrode 111d. Although each of the transistors 111 is of a top-gate type, in which the gate electrode 111b is located on the active layer 111a in Fig. 2 is designed, the embodiment is not based on Fig. 2 limited. Each of the transistors 111 can be a bottom-gate type, in which the gate electrode 111b is formed below the active layer 111a, or can be a double-gate type, in which the gate electrode 111b is formed on and below the active layer 111a.

[0037] The active layer 111a is formed on the wafer substrate 110. The active layer 111a can be a silicon-group semiconductor material or an oxide-group semiconductor material. A gate insulating layer 112 is formed on the active layer 111a. The gate insulating layer 112 can have a single-layer structure or a multi-layer structure made of an inorganic material such as silicon oxide (SiOx) and silicon nitride (SiNx). The gate electrode 111b is formed on the gate insulating layer 112.

[0038] The source electrode 111c is connected to the active layer 111a via a first trench 111e, and the drain electrode 111d is connected to the active layer 111a via a second trench 111f. The active layer 111a, the gate electrode 111b, the source electrode 111c, and the drain electrode 111d are isolated from each other by a first insulating layer 113. The first insulating layer 113 can have a single-layer or multi-layer structure of an inorganic material such as silicon dioxide (SiOx) and silicon nitride (SiNx).

[0039] A first metal layer 114a and a second metal layer 115a are formed on the first insulating layer 113. The first metal layer 114a is connected to the drain electrode 111d by a third groove 114b, and the second metal layer 115a is connected to the first metal layer 114a by a fourth groove 115b. The first and second metal layers 114a and 115a are insulated by a second insulating layer 117. The second insulating layer 117 can be a single-layer structure or a multi-layer structure made of an inorganic material such as silicon dioxide (SiOx) and silicon nitride (SiNx). The first metal layer 114a, the second metal layer 115a, and the second insulating layer 117 can be omitted.

[0040] First electrodes 121 are formed on the second insulating layer 117. Each of the first electrodes 121 is connected to the second metal layer 115a by a fifth groove 116. The first electrodes 121 can have a transparent conductive oxide (TCO) such as indium tin oxide (ITO) and indium zinc oxide (IZO).

[0041] The OLED device 100, for example, is of a top-emitter type, in which light is emitted from the organic light-emitting layer 130 to an upper section. A reflective electrode 122 can be arranged below each of the first electrodes 121 to reflect the light emitted from the organic light-emitting layer 130 to a lower section. The reflective electrode 122 can be made of a metallic material with a relatively high reflectivity, for example, silver (Ag).

[0042] A buffer electrode 123 can be arranged below the reflecting electrode 122. The buffer electrode 123 can have a double-layer structure of titanium (Ti) and titanium nitride (TiN). The buffer electrode 123 can be omitted.

[0043] The first electrodes 121, the reflecting electrode 122 and the buffer electrode 123 can have a vertical structure, wherein a side surface of the first electrodes 121, the reflecting electrode 122 and the buffer electrode 123 has a first angle θ1 of about 90 degrees with a top surface of the second insulating layer 117.

[0044] During the manufacturing of the OLED device (e.g. Fig. 5D and Fig. 6A) A step difference due to the first electrodes 121, the reflecting electrode 122, and the buffer electrode 123 can be planarized by means of a planarization layer 150 formed between the first electrodes 121. The planarization layer 150 can have a sixth trench T penetrating the planarization layer 150, and the second insulating layer 117 can be partially removed to coincide with the sixth trench T. The planarization layer 150 covers an edge section of the first electrode 121 in a first region A1 to prevent a short circuit between the first electrode 121 and the organic light-emitting layer 130, and can be formed on the second insulating layer 117 in a third region A3 to adjust the width of the sixth trench T.

[0045] The organic light-emitting layer 130 is formed on the first electrodes 121 and the planarization layer 150. The organic light-emitting layer 130 can comprise at least one hole injection layer (HIL), a hole transport layer (HTL), or an emitting material layer (EML), an electron transport layer (ETL), and an electron injection layer (EIL). When voltages are applied to the first electrode 121 and the second electrode 140, a hole moves through the HIL and the HTL to the emitting material layer, and an electron moves through the EIL and the ETL to the emitting material layer. The hole and the electron combine to emit light.

[0046] Organic light-emitting layer 130 can be a white-emitting layer to emit white-colored light. Organic light-emitting layer 130 can be a common layer formed across all pixels.

[0047] The organic light-emitting layer 130 has a tandem structure with at least two stacks 130a, 130c. For example, the organic light-emitting layer 130 has a first stack 130a, a charge-generating layer 130b, and a second stack 130c. Each of the at least two stacks 130a, 130c has a hole transport layer (HTL), at least one emitting material layer (EML), and an electron transport layer (ETL). For example, a first stack 130a is formed on a first electrode 121, a charge-generating layer (CGL) 130b is formed on the first stack 130a, and a second stack 130c is formed on the charge-generating layer 130b. Additionally, a second charge-generating layer can be formed on the second stack 130c, and another stack can be formed on the second charge-generating layer, and so on.

[0048] The charge-generating layer 130b is formed between the first and second stacks 130a, 130c. The charge-generating layer 130b can have an N-type charge-generating layer adjacent to a lower stack 130a and a P-type charge-generating layer above the N-type charge-generating layer adjacent to an upper stack 130c. The N-type charge-generating layer injects an electron into the lower stack 130a, and the P-type charge-generating layer injects a hole into the upper stack 130c. The N-type charge-generating layer can have an organic layer doped with an alkali metal such as lithium (Li), sodium (Na), potassium (K), and cesium (Cs), or an alkaline earth metal such as magnesium (Mg), strontium (Sr), barium (Ba), and radium (Ra). The P-type charge-generating layer can consist of an organic material with hole-transport capability that is doped with a dopant.

[0049] The organic light-emitting layer 130 can be formed by a deposition or a solution process. For example, the organic light-emitting layer 130 can be formed by an evaporation deposition process. The film formed by an evaporation process may exhibit poor step coverage. If the planarization layer 150 is not positioned between the first electrodes 121, the organic light-emitting layer 130 may have a relatively small thickness in the upper edge region of the first electrode 121. Since a strong electric field is generated between the first and second electrodes 121 and 140, the deterioration of the organic light-emitting layer 130 in the edge region may be accelerated. Step coverage refers to the ability of a film to cover a step or edge without a cut or break.

[0050] In the first embodiment of the present disclosure, since the planarization layer 150 covers the step between the second insulating layer 117 and each first electrode 121, a short circuit between the first electrodes 121 and the charge-generating layer of the organic light-emitting layer 130, or between the first electrodes 121 and the second electrode 140, in the step region between the second insulating layer 117 and the first electrode 121, can be prevented. Since the planarization layer 150 is configured to cover the edge section of the first electrode 121 in the first region A1, a short circuit between the first electrode 121 and the organic light-emitting layer 130 can be prevented. The planarization layer 150, which contacts the edge section of the first electrode 121 in the first region A1, can have a width of approximately 0.1 µm or greater.In particular, as in . Fig. 3B, the width of the sixth trench T of the planarization layer 150 can be set by forming the planarization layer 150 on the second insulating layer 117 in the third area A3.

[0051] Since the organic light-emitting layer 130 has a poor step coverage property, the thickness of the organic light-emitting layer 130 at a side wall of the sixth trench T can be less than a thickness at a bottom surface of the sixth trench T, as shown in the Fig. 3A and Fig. Figure 3B shows that the sixth trench T can be divided into two parts within the planarization layer 150 and the second insulating layer 117. The first stack 130a and / or the charge-generating layer 130b of the organic light-emitting layer 130 can be configured to have a discontinuous section at the point where the sidewall and bottom surfaces of the sixth trench T meet, thereby increasing the resistance of the organic light-emitting layer 130. The discontinuous section can intersect (i.e., interrupt) the first stack 130a and / or the charge-generating layer 130b. More generally, discontinuity means that the thickness of the first stack 130a and / or the thickness of the charge-generating layer 130b is / are reduced compared to their respective thicknesses outside the sixth trench T.As a result, the influence on a neighboring pixel due to leakage current through the organic light-emitting layer 130 can be minimized. For example, the transmission of leakage current through the discontinuous part of the charge-generating layer 130b can be effectively prevented, the latter being particularly prone to allowing electrons to escape to neighboring (sub-)pixels.

[0052] Since, in the first embodiment of the present disclosure, the sixth trench T is formed in the planarization layer 150 and the second insulating layer 117, the path of the leakage current through the organic light-emitting layer 130 between adjacent pixels can be lengthened compared to an OLED device without the sixth trench T. Additionally, since the thickness of the organic light-emitting layer 130 on the sidewall surface of the sixth trench T is less than the thickness of the organic light-emitting layer 130 on the bottom surface of the sixth trench T, the resistance of the organic light-emitting layer 130 can increase, and the influence on the adjacent pixel due to a leakage current through the organic light-emitting layer 130 can be minimized.For example, the sixth trench T can have a width equal to or less than approximately 0.17 µm and a depth equal to or greater than approximately 0.5 µm (which can be measured from the upper surface of the planarization layer 150 to the bottom of trench T in the second insulating layer 117).

[0053] The second electrode 140 is arranged on the organic light-emitting layer 130. The second electrode 140 can be a common layer formed jointly across all pixels. The second electrode 140 can be a transparent conductive material such as indium tin oxide (ITO) and indium zinc oxide (IZO), or a semi-transparent conductive material such as magnesium (Mg), silver (Ag), and an alloy of magnesium and silver.

[0054] If the second electrode 140 has a semi-transparent conductive material, a microcavity effect can be achieved. The second electrode 140 can be formed by a physical vapor deposition (PVD) process, for example, sputtering. Since a film formed by a PVD process exhibits excellent step coverage, the second electrode 140 can have a uniform thickness, even with the sixth trench T, compared to the organic light-emitting layer 130.

[0055] A sealing layer 160 is formed on the second electrode 140. The sealing layer 160 can prevent the penetration of oxygen or moisture into the organic light-emitting layer 130 and the second electrode 140. For example, the sealing layer 160 can have at least one inorganic layer and at least one organic layer.

[0056] Color filters 171 and 172 are arranged on the sealing layer 160 to correspond to pixels P. For example, a red color filter can be arranged to correspond to a red pixel, a green color filter can be arranged to correspond to a green pixel, and a blue color filter can be arranged to correspond to a blue pixel.

[0057] A coating layer can be formed on the color filters 171 and 172 to planarize a step difference caused by the color filters 171 and 172. An encapsulation layer 180 can be formed on the color filters 171 and 172.

[0058] Fig. Figure 4 is a flowchart showing a method for manufacturing an organic light-emitting display device according to the present disclosure. Fig. Figures 5A to 5H are cross-sectional views showing a method for manufacturing an organic light-emitting display device according to a first embodiment of the present disclosure, and Fig. Figure 6 is a cross-sectional view showing an organic light-emitting display device according to another embodiment of the present disclosure. Fig. 5A to 5H correspond to line II' of Fig. 1 and Fig. 6 corresponds Fig. 5H. For the sake of simplicity, show Fig. 5H and Fig. 6 the organic light-emitting layer 130 in the trench T as continuous. However, in embodiments of the present disclosure, at least one of the layers 130a and / or 130b in the organic light-emitting layer 130 in the trench T is interrupted, as shown in the enlarged views of the Fig. 3A or 3B is shown.

[0059] In the Fig. 4 and Fig. 5A, the transistors 111 are formed on the wafer substrate 110 (S101). The active layer 111a of each of the transistors 111 is formed on the wafer substrate 110. The active layer 111a can be a semiconductor material of a silicon group or a semiconductor material of an oxide group.

[0060] The gate insulating layer 112 is formed on the active layer 111a. The gate insulating layer 112 can have a single-layer structure or a multi-layer structure made of an inorganic material such as silicon oxide (SiOx) and silicon nitride (SiNx).

[0061] The gate electrode 111b is formed on the gate insulating layer 112. The first insulating layer 113 is formed on the active layer 111a and the gate electrode 111b. The first insulating layer 113 can have a single-layer structure or a multi-layer structure made of an inorganic material such as silicon dioxide (SiOx) and silicon nitride (SiNx).

[0062] The first and second trenches 111e and 111f, which expose the active layer 111a, are formed in the first insulating layer 113. The source electrode 111c and the drain electrode 111d are formed on the first insulating layer 113. The source electrode 111c is connected to the active layer 111a via the first trench 111e, and the drain electrode 111d is connected to the active layer 111a via the second trench 111f.

[0063] The first insulating layer 113 is formed on the source electrode 111c and the drain electrode 111d. The third groove 114b, which exposes the drain electrode 111d, is formed in the first insulating layer 113. The first metal layer 114a is formed on the first insulating layer 113. The first metal layer 114a is connected to the drain electrode 111d by the third groove 114b.

[0064] The second insulating layer 117 is formed on the first metal layer 114a. The second insulating layer 117 can have a single-layer structure or a multi-layer structure made of an inorganic material such as silicon oxide (SiOx) and silicon nitride (SiNx).

[0065] The fourth trench 115b, which exposes the first metal layer 114a, is formed in the second insulating layer 117. The second metal layer 115a is formed on top of the second insulating layer 117. The second metal layer 115a is connected to the first metal layer 114a by the fourth trench 115b.

[0066] The second insulating layer 117 is further formed on the second metal layer 115a. The fifth trench 116, which exposes the second metal layer 115a, is formed in the second insulating layer 117.

[0067] In the Fig. 4 and Fig. In step 5B, the first electrodes 121 are formed on the second insulating layer 117 (S102). The buffer metal layer 123a, the reflective metal layer 122a, and a first metal layer 121a are formed successively on the second insulating layer 117. The buffer metal layer 123a can have a double-layer structure of titanium (Ti) and titanium nitride (TiN). The reflective metal layer 122a can have a metallic material with a relatively high reflectivity, for example, silver (Ag). The first metal layer 121a can have a transparent conductive oxide (TCO) such as indium tin oxide (ITO) and indium zinc oxide (IZO).

[0068] A photoresist structure is formed on the first metal layer 121a, the reflective metal layer 122a, and the buffer metal layer 123a. The photoresist structure can be arranged in the pixels P.

[0069] In the Fig. 4 and Fig. In step 5C, the first electrodes 121, the reflective electrodes 122, and the buffer electrodes 123 are formed by dry etching the first metal layer 121a, the reflective metal layer 122a, and the buffer metal layer 123a outside the photoresist structure. Next, the photoresist structure is removed.

[0070] In the Fig. 4 and Fig. In step 5D, the planarization layer 150 is formed on the first electrodes 121 (S103). The planarization layer 150 fills a space between the first electrodes 121. A filler material layer 150a is formed on the second insulating layer 117 and the first electrode 121. For example, the filler material layer 150a can be one of acrylic resin, epoxy resin, phenolic resin, polyamide resin, or polyimide resin.

[0071] In the Fig. 4 and Fig. In 5E, the filler material layer 150a can be structured by a photolithographic process using a photomask PM to form the planarization layer 150. One step to form a photoresist layer and one step to form a photoresist structure corresponding to a mask structure are described in Fig. 5E omitted.

[0072] In Fig. 4 and Fig. 5F The filler layer 150a can be structured by direct exposure and direct etching according to a material property of the filler layer 150a without the photoresist structure. An etching material that can etch the filler layer 150a but cannot etch the first electrodes 121 can be selected for the etching step of the filler layer 150a. The planarization layer 150 has a second region A2 that covers a side surface of the first electrodes 121. The planarization layer 150 further has at least a first region A1 that covers an upper edge surface of the first electrodes 121 and a third region A3 that covers the second insulating layer 117. The third region A3 can have a width greater than that of the second region A2. The planarization layer 150 can be spaced apart from each other by the sixth trench T (S104).

[0073] In Fig. 4 and Fig. In 5G, the second insulating layer 117 is etched using the planarization layer 150 as an etching mask. Since an additional mask is not required, the manufacturing process is simplified. Furthermore, the manufacturing deviation is reduced, leading to a decrease in the defect rate and lower manufacturing costs. An etching material capable of etching the second insulating layer 117 but not the planarization layer 150 or the first electrodes 121 can be selected. For example, an etching solution for the second insulating layer 117 may differ from an etching solution for the filler layer 150a or from the photoresist structure of the filler layer 150a. The sixth trench T is formed in the second insulating layer 117 using the planarization layer 150 as an etching mask.The etching step for the second insulating layer 117 can be combined with the etching step for the filler layer 150a, and an etching material that can etch the second insulating layer 117 and the planarization layer 150 but cannot etch the first electrode 121 can be used for the combined step. The etching material can have different etch rates for the second insulating layer 117 and the planarization layer 150, and a relatively high etch rate for the second insulating layer 117. Since the sixth trench T is formed using the planarization layer 150 as an etching mask, a lower edge of the planarization layer 150 can coincide with an upper edge of the sixth trench T in the second insulating layer 117. The planarization layer 150 and the second insulating layer 117 can jointly form the sixth trench T (S105).

[0074] In Fig. 4 and Fig. 5H the organic light-emitting layer 130, the second electrode 140 and the sealing layer 160 are formed successively on the planarization layer 150, which has the sixth trench T (S106).

[0075] The organic light-emitting layer 130 is formed on the first electrodes 121 and the planarization layer 150. The organic light-emitting layer 130 can be formed by a deposition process or a solution process. If the organic light-emitting layer 130 is formed by a deposition process, it can be formed using an evaporation method.

[0076] Organic light-emitting layer 130 can be a white-emitting layer to emit white-colored light. Organic light-emitting layer 130 can be a common layer formed across all pixels.

[0077] If the organic light-emitting layer 130 is a white-emitting layer, it can have a tandem structure with at least two stacks 130a and 130c. Each of the at least two stacks has a hole transport layer (HTL), at least one emitting material layer (EML), and an electron transport layer (ETL). The charge-generating layer 130b is formed between the stacks 130a and 130c.

[0078] The charge-generating layer 130b can have an N-type charge-generating layer adjacent to a lower stack 130a and a P-type charge-generating layer above the N-type charge-generating layer adjacent to an upper stack 130c. The N-type charge-generating layer injects an electron into the lower stack 130a, and the P-type charge-generating layer injects a hole into the upper stack 130c. The N-type charge-generating layer can have an organic layer doped with an alkali metal such as lithium (Li), sodium (Na), potassium (K), and cesium (Cs), or an alkaline earth metal such as magnesium (Mg), strontium (Sr), barium (Ba), and radium (Ra). The P-type charge-generating layer can have an organic material with hole-transport capability doped with a dopant.

[0079] The organic light-emitting layer 130, formed by an evaporation process, may exhibit poor step coverage. As a result, the thickness of the organic light-emitting layer 130 at the sidewall surface of the sixth trench T may be less than the thickness of the light-emitting layer 130 at the bottom surface of the sixth trench T. Additionally, the first stack 130a and / or a charge-generating layer 130b of the organic light-emitting layer 130 may be configured to have a cleaved or interrupted section at the point where the sidewall and bottom surfaces of the sixth trench T meet, thereby increasing the resistance of the organic light-emitting layer 130. This may minimize the impact on a neighboring pixel due to leakage current through the organic light-emitting layer 130.

[0080] The second stack 130c of the organic light-emitting layer 130 can planarize the unevenness of the charge-generating layer 130b of the organic light-emitting layer 130, which corresponds to the sixth trench T, to form a flat upper surface in Fig. To have 5H. In Fig. 6. The second stack 130c of the organic light-emitting layer 130 cannot planarize the unevenness of the charge-generating layer 130b of the organic light-emitting layer 130, which corresponds to the sixth trench T, to have an uneven top surface.

[0081] The second electrode 140 is formed on the organic light-emitting layer 130. The second electrode 140 can be a common layer formed across the entire pixel. The second electrode 140 can consist of a transparent conductive oxide (TCO) such as indium tin oxide (ITO) and indium zinc oxide (IZO), or a semi-transparent conductive material such as magnesium (Mg), silver (Ag), and an alloy of magnesium and silver. If the second electrode 140 consists of a semi-transparent conductive material, a microcavity effect can be achieved.

[0082] The second electrode 140 can be formed by a physical vapor deposition (PVD) process such as sputtering. Since a film formed by a PVD process exhibits excellent step coverage, the second electrode 140 can have a uniform thickness even with the sixth trench T, compared to the organic light-emitting layer 130.

[0083] The sealing layer 160 is formed on the second electrode 140. The sealing layer 160 can prevent the penetration of oxygen or moisture into the organic light-emitting layer 130 and the second electrode 140. For example, the sealing layer 160 can have at least one inorganic layer and at least one organic layer.

[0084] Color filters 171 and 172 are formed on the sealing layer 160 (S107). Color filters 171 and 172 correspond to pixels. For example, a red color filter can be arranged to correspond to a red pixel, a green color filter can be arranged to correspond to a green pixel, and a blue color filter can be arranged to correspond to a blue pixel. A coating layer can be formed on color filters 171 and 172 to planarize any step difference caused by the color filters 171 and 172. The encapsulation layer 180 can be attached to color filters 171 and 172.

[0085] Fig. Figures 7A to 7D are cross-sectional views showing a method for manufacturing an organic light-emitting display device according to a second embodiment of the present disclosure. Fig. 7A to 7D correspond to a line II' of Fig. 1. For the sake of simplicity, it states Fig. 7D shows the organic light-emitting layer 130 in the trench T as continuous. However, in embodiments of the present disclosure, at least one of the layers 130a and / or 130b in the organic light-emitting layer 130 in the trench T is interrupted, as shown in the enlarged views of the Fig. 3A or Fig. 3B is shown.

[0086] The steps for forming the transistors 111, the first and second metal layers 114a and 115a, the first electrodes 121 and the filler layer 150a of the second embodiment are the same as the steps of the Fig. 5A to 5D of the first embodiment.

[0087] In Fig. 7A The filler material layer 150a is structured by a photolithographic process using a photomask PM with three permeabilities to form a final shape at a contact section of the planarization layer 150 and the second insulating layer 117. The planarization layer 150 has the first region A1, which covers the upper edge surface of the first electrodes 121, the second region A2, which covers the side surface of the first electrodes 121, and the third region A3, which contacts the second insulating layer 117 and is connected to the second region A2. The width of the third region A3 can be greater than the width of the second region A2. The width of the sixth trench T can be precisely adjusted by forming the third region A3 with a greater width.Since the mask structure has different permeabilities, the second and third areas A2 and A3 can be designed to have different thicknesses.

[0088] One step to form a photoresist layer and one step to form a photoresist structure corresponding to a mask structure are in Fig. 7A omitted. The filler layer 150a can be structured by direct exposure and direct etching according to a material property of the filler layer 150a without the photoresist structure. An etching material that can etch the filler layer 150a but cannot etch the first electrodes 121 can be selected for the step of etching the planarization layer 150a. The planarization layer 150a has a second region A2 that covers a side surface of the first electrodes 121. The planarization layer 150a can further have at least one first region A1 that covers an upper edge face of the first electrodes 121a and a third region A3 that covers the second insulating layer 117. The third region A3 can have a width greater than that of the second region A2. The planarization layer 150a can be spaced apart from each other by the sixth trench T.

[0089] In Fig. 7B the filler material layer 150a is etched to make the planarization layer 150 similar Fig. to form 5G.

[0090] In Fig. 7C is the sixth trench T in the second insulating layer 117 using the planarizing layer 150 as an etching mask similar to Fig. 5H trained.

[0091] In Fig. 7D the organic light-emitting layer 130, the second electrode 140, the sealing layer 160, the color filters 171 and 172 and the encapsulation layer 180 are sequentially placed on the planarization layer 150 with the sixth trench T similar to Fig. 5H and Fig. 5I formed. The organic light-emitting layer 130 exhibits a step difference due to the sixth trench T and the third area A3 of the planarization layer 150.

[0092] The first stack 130a and / or a charge-generating layer 130b of the organic light-emitting layer 130 can be configured to have a cleaved or interrupted section at the location where the sidewall surface and the bottom surface of the sixth trench T meet, in order to increase the resistance of the organic light-emitting layer 130. Consequently, the impact on an adjacent pixel due to leakage current through the organic light-emitting layer 130 can be minimized.

[0093] Fig. Figures 8A to 8E are cross-sectional views showing a method for manufacturing an organic light-emitting display device according to a third embodiment of the present disclosure. Fig. 8A to 8E correspond to a line II' of Fig. 1.

[0094] The steps for forming the transistors 111, the first and second metal layers 114a and 115a, the first electrodes 121 and the filler layer 150a of the third embodiment are the same as the steps of the Fig. 5A to 5D of the first embodiment.

[0095] In Fig. In 8A, the filler material layer 150a is formed according to a step difference between the first electrodes 121 and the second insulating layer 117. Although the filler material layer 150a on the first electrodes 121 and the filler material layer 150a on the second insulating layer 117 are formed as in the Fig. 5F and Fig. 7B can be structured by an etching step, the filler layer 150a on the first electrodes 121 and the filler layer 150a on the second insulating layer 117 can be structured using different photomasks.

[0096] In Fig. 8B is a first photomask PM1 arranged above the filler material layer 150a. The first photomask PM1 can have a mask structure corresponding to the first electrodes 121.

[0097] In Fig. 8C the filler material layer 150a on the first electrodes 121 is structured to expose the first electrode 121.

[0098] In Fig. 8D is a second photomask PM2 arranged above the filler material layer 150a. The second photomask PM2 has a mask structure that corresponds to the second insulating layer 117 between the first electrodes 121.

[0099] In Fig. In step 8E, the filler layer 150a and the second insulating layer 117 are structured to form the sixth trench T. Since the photoresist structure covers the first electrodes 121, the first electrodes 121 are protected by the photoresist structure while the filler layer 150a and the second insulating layer 117 are structured. Additionally, a further optimized etching material can be used for the step of etching the second insulating layer 117. The etching material for structuring the filler layer 150a on the first electrode 121 can differ from the etching material for structuring the filler layer on the second insulating layer 117. Since the second insulating layer 117 and the planarization layer 150 together form the sixth trench T, a lower edge of the planarization layer 150 can coincide with an upper edge of the sixth trench T in the second insulating layer.The planarization layer 150 and the second insulation layer 117 can jointly have the sixth trench T.

[0100] Fig. 9A and Fig. Figure 9B are cross-sectional views showing a method for manufacturing an organic light-emitting display device according to a fourth embodiment of the present disclosure. Fig. 9A and Fig. 9B corresponds to a line II' of Fig. 1.

[0101] The steps for forming the transistors 111, the first and second metal layers 114a and 115a, the first electrodes 121 and the filler layer 150a of the fourth embodiment are the same as the steps of the Fig. 5A to 5D of the first embodiment. A step for structuring the filler material layer 150a on the first electrodes 121 of the fourth embodiment is the same as the step of Fig. 8B of the third embodiment.

[0102] In Fig. 9A is a photomask PM arranged over the filler material layer 150a. The photomask PM can have a mask structure corresponding to the second insulating layer 117 between the first electrodes 121. The mask structure can have a width smaller than the gap spacing between the second regions A2 of the planarization layer 150, which covers the side surface of the first electrodes 121.

[0103] In Fig. 9B, the planarization layer 150 and the second insulating layer 117 can be structured such that the planarization layer 150 can contact the third region A3, which contacts the second insulating layer 117 and is connected to the second region A2. Since an influence due to the process deviation compared to the third embodiment of Fig. Since the influence of defective pixels is reduced from 8A to 8D, the sixth trench has a uniform width, and the step coverage of the organic light-emitting layer 130 and the second electrode 140 is effectively adjusted in subsequent processes. Because the second insulating layer 117 and the planarizing layer 150 together form the sixth trench, a lower edge of the planarizing layer 150 can coincide with an upper edge of the sixth trench T in the second insulating layer 117. The planarizing layer 150 and the second insulating layer 117 can share the sixth trench T.

[0104] Fig. 10 presents photographs showing experimental results of the sixth trench of an organic light-emitting display device according to one of the first to fourth embodiments of the present disclosure.

[0105] In Fig. The sixth trench T in the second insulating layer 117 and the planarization layer 150 can have widths of approximately 0.19 µm, approximately 0.17 µm, and approximately 0.15 µm, respectively. If the sixth trench has a width of approximately 0.19 µm, the organic light-emitting layer 130 and the second electrode 140 can form within the sixth trench T, and the second electrode 140 (cathode) may be cut or interrupted. As a result, the second electrode 140 may be open through subpixels, exhibiting a relatively high resistance, and the organic light-emitting display device may fail to be driven due to positional misalignment. If the sixth trench has a width of approximately 0.17 µm to approximately 0.15 µm, the organic light-emitting layer 130 is partially cut, so that part of the organic light-emitting layer 130 and the second electrode 140 contact each other.As a result, deterioration due to the sixth trench with a width of approximately 0.19 µm is prevented.

[0106] Fig. Figure 11 is a graph showing experimental results of the sixth trench of an organic light-emitting display device according to one of the first to fourth embodiments of the present disclosure.

[0107] In Fig. The sixth trench T in the second insulating layer 117 and in the planarizing layer 150 can have depths of approximately 0.3 µm, approximately 0.4 µm, and approximately 0.5 µm, respectively. If the sixth trench T has a depth of less than approximately 0.5 µm, the current increases at a voltage less than approximately 0 V. Although the diode of the organic light-emitting layer 130 should be switched off at a voltage less than approximately 0 V, the diode of the organic light-emitting layer 130 is switched on due to a leakage current through the side surface. The leakage current can be prevented by cutting or interrupting the organic light-emitting layer 130 if the sixth trench T has a depth greater than approximately 0.5 µm.Since the resistance of the organic light-emitting layer 130 increases through the formation of the first stack 130a and / or a charge-generating layer 130b of the organic light-emitting layer 130 in the sixth trench T, the influence on a neighboring pixel due to leakage current through the organic light-emitting layer 130 can be minimized. As a result, it is preferred that the sixth trench has a depth of more than approximately 0.5 µm.

[0108] Fig. Figure 12 is a graph showing simulation results of the sixth trench of an organic light-emitting display device according to one of the first to fourth embodiments of the present disclosure.

[0109] In Fig. 12. The sixth trench T in the second insulating layer 117 and the planarization layer 150 can have depths of approximately 0.3 µm, approximately 0.5 µm, and approximately 1.0 µm, respectively. While the second electrode 140 is formed continuously on the sixth trench T with depths of approximately 0.3 µm and approximately 0.5 µm, the second electrode 140 is cut or interrupted in the sixth trench T with a depth of approximately 1.0 µm. When the second electrode 140 is cut or interrupted, its resistance increases, as in the experiments with the sixth trench T at different widths, and the organic light-emitting indicator device cannot be driven due to a positional deviation. As a result, it is preferred that the sixth trench has a depth equal to or less than approximately 1.0 µm.

[0110] Fig. Figure 13 is a top view showing an organic light-emitting display device according to one of the first to fourth embodiments of the present disclosure.

[0111] In Fig. 13. The sixth groove T can be formed on one side between the first electrodes 121 or can be formed on four sides of each of the first electrodes 121. If each of the first electrodes 121 has a shape other than a rectangular shape, the sixth groove T can be formed on all sides of each of the first electrodes 121.

[0112] Fig. 14A and Fig. Figures 14B are a perspective view and a top view showing a head-mounted display comprising an organic light-emitting display device according to one of the first to fourth embodiments of the present disclosure.

[0113] In Fig. 13A and Fig. 13B comprises a head-mounted display HMD comprising an organic light-emitting display device, a display housing 10, a left eye lens 20a, a right eye lens 20b and a headband 30.

[0114] The display housing 10 accommodates a display device and provides an image of the display device to the lens for the left eye 20a and the lens for the right eye 20b. The display device can be an organic light-emitting diode (OLED) display device according to any one of the first to fourth embodiments of the present disclosure.

[0115] The display housing 10 can be configured to deliver the same image to the lens for the left eye 20a and the lens for the right eye 20b. Alternatively, the display housing 10 can be configured to deliver one image for the left eye and one image for the right eye to the lens for the left eye 20a and the lens for the right eye 20b, respectively. The head-mounted display HMD of Fig. 14A and Fig. 14B can be applied to a virtual reality (VR) device.

[0116] The headband 30 can be attached to the display housing 10. Although the headband 30 is designed to support the top and side surfaces of a user's head in Fig. The shape of the headband 30 is not limited to enclosing the device. The headband 30 is used to attach the head-mounted display to a user's head. In another embodiment, the headband 30 can have a glass or helmet shape.

[0117] Fig. Figure 15 is a top view showing a head-mounted display comprising an organic light-emitting display device according to one of the first to fourth embodiments of the present disclosure.

[0118] In Fig. Device 15 comprises a head-mounted display (HMD) comprising a display housing 10, a left-eye lens 20a, a right-eye lens 20b, a left-eye organic light-emitting diode (OLED) device 11, a right-eye organic light-emitting diode (OLED) device 12, and a headband 30. The left-eye OLED device 11 and the right-eye OLED device 12 can be positioned in front of the left-eye lens 20a and the right-eye lens 20b, respectively, within the display housing 10. The left-eye OLED device 11 and the right-eye OLED device 12 can display an image for the left eye and an image for the right eye, respectively.The image for the left eye, displayed by the left eye OLED device 11, is transmitted through the left eye lens 20a to a user's left eye LE, and the image for the right eye, displayed by the right eye OLED device 12, is transmitted through the right eye lens 20b to a user's right eye LE.

[0119] A magnifying lens can further be arranged between the left eye lens 20a and the left eye OLED device 11, and between the right eye lens 20b and the right eye OLED device 12. The left and right images displayed by the left eye OLED device 11 and the right eye OLED device 12 can be magnified and transmitted to the user. The HMD of Fig. 15 can be applied to an Augmented Reality (AR) device.

[0120] Fig. Figure 16 is a cross-sectional view showing a head-mounted display comprising an organic light-emitting display device according to one of the first to fourth embodiments of the present disclosure.

[0121] In Fig.Figure 16 features a head-mounted display comprising a display housing 10, a left-eye lens 20a, a right-eye lens (not shown), a reflector plate 13, and an OLED device 14. The OLED device 14 projects an image toward the reflector plate 13, and the reflector plate 13 reflects the image from the OLED device 14 toward the left-eye lens 20a and the right-eye lens. As a result, the image from the OLED device 14 is transmitted through the left-eye lens 20a to the left eye LE of a user and through the right-eye lens to the right eye of a user. If a semi-mirror is used as the reflector plate 13, the display housing 10 can have a thin profile.

[0122] Additionally, a magnifying lens can be arranged between the lens for the left eye 20a and the reflection plate 13, and between the lens for the right eye and the reflection plate 13. The image from the OLED device 14 can be magnified and transmitted to the user.

[0123] Consequently, in an organic light-emitting display device according to one embodiment of the present disclosure, since a planarization layer is formed between first electrodes to fill a step between an insulating layer and each first electrode, a short circuit between the first electrode and a charge-generating layer or a second electrode in the step region between the insulating layer and the first electrode is prevented. Because the planarization layer partially covers an upper edge surface of the first electrode, the generation of a strong electric field between the first and second electrodes is prevented, and deterioration of an organic light-emitting layer is prevented. A short circuit between the first electrode and the organic light-emitting layer is prevented.

[0124] Because a trench is formed in the planarization layer, the path of a leakage current between adjacent pixels through the organic light-emitting layer can be longer compared to an OLED device without a trench. Since the planarization layer is designed to have a relatively large width in the area where it and the insulating layer are in contact, the width of the trench in the insulating layer can be adjusted. Because the thickness of the organic light-emitting layer at a side wall of the trench is less than the thickness at the bottom of the trench, the resistance of the organic light-emitting layer can be increased, and the impact of a leakage current through the organic light-emitting layer on an adjacent pixel can be minimized.Since the first stack 130a and / or a charge-generating layer 130b of the organic light-emitting layer can be configured to have at least one cut or interrupted section at a position where the sidewall surface and the bottom surface of the trench meet, the resistance of the organic light-emitting layer can be increased and the influence on an adjacent pixel due to a leakage current through the organic light-emitting layer can be minimized.

[0125] It is obvious to the person skilled in the art that various modifications and variations can be made in an organic light-emitting display device, a head-mounted display containing such device, and a method for manufacturing the same, within the scope of the attached claims.

Claims

[1] Organic light-emitting display device (100) comprising: an insulating layer (117); first electrodes (121) which are arranged on the insulating layer (117) and are spaced apart from each other by a gap; a planarization layer (150) on the first electrodes (121); an organic light-emitting layer (130) on the first electrodes (121); and a second electrode (140) on the organic light-emitting layer (130), wherein the insulating layer (117) has a groove (T) in the gap between the first electrodes (121), wherein the organic light-emitting layer (130) has a first stack (130a) on the first electrodes (121), a charge-generating layer (130b) on the first stack (130a) and a second stack (130c) on the charge-generating layer (130b), wherein each of the stacks (130a, 130c) has a hole transport layer, at least one emitting material layer and an electron transport layer, the first stack (130a) has a discontinuous section in the trench (T), the planarization layer (150) has a first area (A1) that covers an edge section of an upper surface of each first electrode (121), and a second area (A2) that completely covers a side surface of each first electrode (121), and the first stack (130a), the charge generation layer (130b) and the second stack (130c) are arranged successively on the second area (A2) of the planarization layer (150). [2] Organic light-emitting display device according to claim 1, wherein at least one or at least some, preferably all, layers of the second stack (130c) extend continuously over the trench (T). [3] Organic light-emitting display device according to claim 1 or 2, wherein the charge-generating layer (130b) has a discontinuous section in the trench (T). [4] Organic light-emitting display device according to any one of claims 1 to 3, wherein the width of the gap between the first electrodes (121) is equal to or less than 0.7 µm. [5] Organic light-emitting display device according to any one of claims 1 to 4, wherein the width of the trench (T) is equal to or less than 0.17 µm. [6] Organic light-emitting display device according to any one of claims 1 to 5, wherein the depth of the trench (T) is equal to or greater than 0.5 µm and equal to or less than 1.0 µm. [7] Organic light-emitting display device according to any one of claims 1 to 6, wherein the first stack (130a) and the charge generation layer (130b) are arranged sequentially on a side wall surface of the trench (T), and wherein both the first stack (130a) and the charge generation layer (130b) are interrupted at an edge section of a bottom surface of the trench (T), and the second stack (130c) completely fills the trench (T). [8] Organic light-emitting display device according to claim 7, wherein a width of the first region (A1) of the planarization layer (150) is equal to or greater than 0.1 µm. [9] Organic light-emitting display device according to claim 1, wherein the planarization layer (150) has a third area (A3) which contacts the insulating layer (117) and is connected to the second area (A2). [10] Organic light-emitting display device according to claim 9, wherein a width (W2) of the third area (A3) is greater than a width (W1) of the second area (A2). [11] Head-mounted display (HMD) comprising: a display housing (10); a lens for the left eye (20a) and a lens for the right eye (20b) in the display housing (10); at least one organic light-emitting display device which delivers at least one image to the lens for the left eye (20a) and the lens for the right eye (20b); and a headband (30) connected to the display housing (10), wherein the at least one organic light-emitting display device has the features of any one of claims 1 to 10. [12] Method for producing an organic light-emitting display device (100), comprising: Forming an insulating layer (117) on a substrate (110); Forming first electrodes (121) on the insulating layer (117), wherein the first electrodes (121) are spaced apart from each other by a gap; Formation of a planarization layer (150) on the first electrodes (121); Formation of an organic light-emitting layer (130) on the first electrodes (121); Forming a second electrode (140) on the organic light-emitting layer (130) and Forming a trench (T) in the insulating layer (117) in the gap between the first electrodes (121), wherein the formation of an organic light-emitting layer (130) exhibits: Formation of a first stack (130a) on the first electrodes (121), a charge-generating layer (130b) on the first stack (130a) and a second stack (130c) on the Charge generation layer (130b), the formation of the first stack (130a) shows: the formation of a hole transport layer, at least one emitting material layer and an electron transport layer and the formation of a discontinuous section of the first stack (130a) in the trench (T) and the formation of the second stack (130c) shows: the formation of a hole transport layer, at least one emitting material layer and an electron transport layer, wherein the planarization layer (150) comprises a first region (A1) covering an edge section of an upper surface of each first electrode (121), and a second area (A2) that completely covers one side surface of each first electrode (121), and the first stack (130a), the charge generation layer (130b) and the second stack (130c) are arranged successively on the second area of ​​the planarization layer (150). [13] Method according to claim 12, wherein the formation of the second stack (130c) comprises the formation of at least one or at least some, preferably all, layers of the second stack (130c) as an uninterrupted layer or continuous layers across the trench (T). [14] Method according to claim 12 or 13, wherein the formation of a charge-generating layer (130b) comprises the formation of an interrupted section of the charge-generating layer (130b) in the trench (T). [15] Method according to any one of claims 12 to 14, wherein a width of the trench (T) is set by forming the planarization layer (150) on the insulating layer (117).

Images