POWER DEVICE WITH SUPER INTERFACE AND SCHOTTKY DIODE AND METHOD

The integration of a Schottky diode into the unit cell of a power semiconductor device with a superjunction structure addresses the challenges of high forward voltage and slow reverse recovery, achieving significant performance improvements in power semiconductor devices.

DE102019115161B4Active Publication Date: 2026-07-02SEMICON COMPONENTS IND LLC
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Patent Information

Authority / Receiving Office
DE · DE
Patent Type
Patents
Current Assignee / Owner
SEMICON COMPONENTS IND LLC
Filing Date
2019-06-05
Publication Date
2026-07-02

AI Technical Summary

Technical Problem

Existing power semiconductor devices face challenges in achieving lower forward voltage (VF) and faster reverse recovery performance while maintaining reliability and efficiency, particularly in applications requiring high system efficiency and miniaturization.

Method used

Integration of a Schottky diode into the unit cell of a power semiconductor device with a superjunction structure, utilizing a Schottky interface between a pillar and a well to reduce forward voltage and enhance reverse recovery time, while maintaining a compact design.

Benefits of technology

The integrated Schottky diode reduces forward voltage by approximately 30% and reverse recovery time, improving energy efficiency and reducing dynamic switching problems, thereby enhancing the performance of power semiconductor devices in applications like inverters and DC-DC power conversion.

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Abstract

Power semiconductor device comprising: a semiconductor layer (104) having a first conductivity type (N); a groove (126) defined within the semiconductor layer, having an opening, a side wall, and a bottom; a pillar (122) provided below the groove (126) having a second conductivity type (P) different from the first conductivity type; a well (118) having the second conductivity type (P), provided above and spaced apart from the pillar (122); and a metal layer (130) provided above the side wall of the groove (126), the metal layer (130) contacting the semiconductor layer (104) via a gap (123) defining a distance between the well (118) and the pillar (122), thereby forming a Schottky interface of a Schottky diode; a first electrode (108) provided above a first side of the semiconductor layer;a second electrode (106) provided above a second side of the semiconductor layer, and a doping region (124) within the semiconductor layer (104) and between the well (118) and the pillar (122), wherein the doping region (124) has the first conductivity type (N) and a doping concentration greater than that of the semiconductor layer (104).
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