DETECTION DEVICE, IN PARTICULAR WITH CLAMPING SENSOR

Abstract

Detection device (1), comprising: a recognized element (2) that exhibits: a dielectric layer (4; 101) on which a linear conductor layer (5; 104) is formed; Conductor layers (6; 6_U, 6_D; 102, 103) arranged on the top and bottom surfaces of the dielectric layer (4; 101); a transmission channel, wherein a slot (7; 7_1 ~ 7_3; 105; 705) is formed in the transmission channel and on at least one (6_U; 102) of the conductor layers (6; 6_U, 6_D; 102, 103) which are arranged on the top and bottom sides, and a detection unit (3) configured to supply a high-frequency signal (8) to an input section (12) of the linear conductor layer (5; 104) and to generate an electric field around a slot section of the conductor layer (6_U; 102) on which the slot (7; 7_1 ~ 7_3; 105; 705) is formed, and to detect a change in the reflection coefficient at the input section (12), wherein the change is caused by a change in the electric field generated by interference with a detected object (10), where: the detection unit (3) is set up to detect standing waves at the input section (12) that differ in their phases.

Description

DESIGNATION OF THE INVENTION DETECTION DEVICE, IN PARTICULAR WITH CLAMPING SENSOR; CROSS-REFERENCE TO RELATED APPLICATION

[0001] The present application claims priority over Japanese patent application No. 2018-141246, which was filed on July 27, 2018, and the contents of which are hereby incorporated into this application by reference. TECHNICAL AREA OF INVENTION

[0002] The present invention relates to a detection device, in particular with a pinch sensor, for example a detection device that is mounted on a vehicle such as a motor vehicle. BACKGROUND OF THE INVENTION

[0003] Recently, systems with a sliding opening / closing element, such as an electric sliding door for a vehicle or an automatic door in general, have required a detection device to prevent a detected object, such as a human body, from becoming trapped. For example, Patent Document 1 (Japanese Patent Publication JP 2011-73636 A) and Patent Document 2 (Japanese Patent Publication JP 2009-85961 A) both disclose such a detection device. Patent Document 1 discloses a sensitive sensor that detects a change in the resistance values, etc., of a pinch sensor that is subjected to stress (pressure) due to a detected object in contact with the pinch sensor.Furthermore, patent document 2 discloses a capacitive sensor in which a pinch sensor has a conductor section whose capacitance is detected, and which detects a capacitive change attributable to a parasitic capacitance generated between this conductor section and the detected object. Patent document 3 (Japanese patent publication JP 2010-271088 A) does not disclose a detection device to prevent an object from being pinched, but rather a distance measuring device that obtains a distance to the object by means of radio waves. Further prior art is disclosed in the following publications: US 3 947 834 A, EP 1 790 995 A1, US 3 890 615 A, US 5 581 256 A, DE 101 17 516 A1, DE 10 2014 103 212 A1, DE 10 2014 109 399 A1 and US 4 862 061 A. SUMMARY OF THE INVENTION

[0004] In the case of a sensitive sensor, detection occurs after the load is applied, meaning the object is detected only after it has been clamped by the opening / closing element. In contrast, with a capacitive sensor, the object can be detected before it is subjected to the load. However, if a detected element is extended to increase the detection range, the inherent capacitance of the conductor segment being detected increases, while the parasitic capacitance associated with the detected object becomes relatively small. This makes it difficult to detect the change in capacitive load.

[0005] One object of the present invention is to provide a detection device with a large detection range that is able to detect a detected object before the pinch sensor is subjected to a load.

[0006] These and other tasks and novel features of the present invention will become apparent from the following detailed description in conjunction with the accompanying drawings.

[0007] The following is a summary of the invention disclosed in the present application.

[0008] That is to say, a detection device according to the present invention is specified in the accompanying patent claims.

[0009] In this process, the detected object interferes with the electric field generated around the slot section, and this interference alters the electric field, causing a change in the reflection coefficient at the input section of the linear conductor layer. This change in the reflection coefficient allows the object to be detected before a load is applied by sensing its proximity to or contact with it. Furthermore, the detected element is a transmission channel whose basic structure is a stripline configuration, so the length of the transmission channel has a lesser impact on the reflection coefficient at the input section. This enables detection over a large area in a contactless state.

[0010] The following is a brief description of the effects obtained through typical embodiments of the invention disclosed in the present application.

[0011] A pinch sensor and a detection device are provided, which have a large detection range and are able to detect the object before the pinch sensor is subjected to the load. BRIEF DESCRIPTION OF THE DRAWINGS Fig. Figure 1 is a block diagram showing a configuration of a detection device according to a first example; Fig. 2 is a characteristic curve field showing the characteristic curves of a pinch sensor according to a first example; Fig. 3A is a floor plan showing a configuration of the pinch sensor according to the first example; Fig. 3B is a sectional view showing the configuration of the pinch sensor according to the first example; Fig. Figure 4 is a perspective view showing the configuration of the pinch sensor according to the first example; Fig. 5 is a characteristic curve field showing the characteristic curves of the pinch sensor according to the first example; Fig. 6 is a characteristic curve field showing the characteristic curves of the pinch sensor according to the first example; Fig. Figure 7 is a characteristic curve field showing the characteristic curves of the pinch sensor according to the first example; Fig. 8 a block diagram showing the configuration of the pinch sensor according to the first example; Fig. Figure 9 is a perspective view showing a configuration of a pinch sensor according to a first modification example of the first example; Fig. Figure 10 is a perspective view showing a configuration of a pinch sensor according to a second modification example of the first example; Fig. 11 is a block diagram showing a configuration of the pinch sensor according to a second example as an embodiment of the invention; and Fig. Figure 12 is an explanatory illustration that explains the mounting of the detection device on a motor vehicle according to the first and second examples. DESCRIPTION OF PREFERRED EXECUTION FORMS

[0012] Examples of the underlying technology and embodiments of the present invention are described in detail below with reference to the accompanying drawings. It should be noted that components having the same function are consistently designated with the same reference numerals in the drawings used to describe the embodiments, and their repeated description is omitted. (First example)<Umriss der Detektionsvorrichtung>

[0013] First, a pinch sensor (hereinafter also referred to as the “detected element”) and a detection device are explained according to a first example. Fig. Figure 1 is a block diagram showing a configuration of a detection device according to the first example. The reference numeral 1 in Fig. 1 denotes a detection device. The detection device 1 comprises a pinch sensor 2 and a recognition unit 3, which is connected to the pinch sensor 2.

[0014] Although not particularly restricted, the pinch sensor 2 comprises: a linearly shaped conductor layer (hereinafter also referred to as the "linear conductor layer" or "linear conductor section") 5 extending in a DIR direction from one front side of the figure to its rear side; a dielectric layer (dielectric section) 4 configured to surround the linear conductor layer 5; and a conductor layer (conductor section) 6 configured to surround the dielectric layer 4. The conductor layer 6 extends in the DIR direction corresponding to the direction of the linear conductor layer 5. The linear conductor layer 5 is embedded in the dielectric layer 4 and spaced from the conductor layer 6 such that it is electrically isolated (separated) from the conductor layer 6.

[0015] A plurality of slots 7 are arranged on a top surface (upper side) of the conductor layer 6 along the DIR direction in which the conductor layer 6 extends. Due to the slots, the conductor layer 6 has openings, and the dielectric layer 4 is exposed at these openings. The pinch sensor 2 can be considered a transmission channel (transmission path) with a stripline structure. If the pinch sensor 2 is considered as such a channel, the linear conductor layer 5 can be considered the core conductor (core wire) of the transmission channel, and the conductor layer 6 with the plurality of slots arranged in the DIR direction in which the transmission channel extends can be considered an outer conductor arranged to sandwich the core conductor in the transmission channel.

[0016] In the same figure, the reference symbol 10 denotes a recognized object. In this figure, a hand is depicted as the recognized object 10. It is understood that the hand is only an example of the recognized object 10, and that the recognized object is not limited to it.

[0017] The detection unit 3 supplies one or more high-frequency signals 8 to an input section of the linear conductor layer 5 when it detects that the detected object 10 is in the vicinity of, or in contact with, the pinch sensor 2 (hereinafter, "near" includes "contact"). When the high-frequency signal 8 is supplied to the input section of the linear conductor layer 5, a reflected wave 9 is output from the input section of the linear conductor layer 5 to the detection unit 3.

[0018] Fig. Figure 2 is a characteristic curve field showing the characteristic curves of the pinch sensor 2 according to the first example. In the same figure, a transverse axis (horizontal axis) represents frequencies of the high-frequency signal 8, and a longitudinal axis (vertical axis) represents reflection coefficients (S11) based on a ratio of the high-frequency signal 8 to the reflected wave 9. Even if a frequency of the high-frequency signal 8 varies, for example, from a lower frequency to a higher frequency, the reflection coefficients (S11) are nearly constant, as shown by characteristic curve 20, when the detected object 10 is not near the pinch sensor 2. In contrast, the reflection coefficient varies significantly with a reflection frequency when the detected object 10 is near the pinch sensor 2, as shown by characteristic curve 21.The detection unit 3 according to the first example detects whether the reflection coefficient varies (changes) and, upon detection of the change, outputs a detection signal 11 indicating that the detected object 10 is nearby. <Umriss des Einklemmsensors>

[0019] Next, a pinch sensor will be explained, following the example from the first example. Fig. 3A and Fig. Figure 3B shows a floor plan and a section view, each illustrating a configuration of the pinch sensor according to the first example. Here, it presents... Fig. 3A shows a floor plan of the pinch sensor 2, and Fig. 3B shows a sectional view along line AA' of Fig. 3A.

[0020] The conductor layer 6 comprises an upper (front, where the object can be detected) conductor layer (first conductor layer, first conductor section) 6_U and a lower (rear, where the object can be detected) conductor layer (second conductor layer, second conductor section) 6_D, which are configured such that the linear conductor layer 5 embedded in the dielectric layer 4 is positioned between them. The upper conductor layer 6_U has a plurality of slots arranged along the DIR direction. Fig. 3 are three slots 7_1 to 7_3 shown as examples.

[0021] Slots 7_1 to 7_3 are configured by openings formed in (on) the upper conductor layer 6_U. Therefore, the upper conductor layer 6_U is not separated (divided) by slots 7_1 to 7_3 and is unified by the respective surrounding sections of slots 7_1 to 7_3. Although not specifically limited to this, each of slots 7_1 to 7_3 has the same structure, which is why slot 7_1 will be explained below as an example.

[0022] The slot 7_1 is rectangular in plan view. The long sides 7_W1, 7_W2 of the slot 7_1 each correspond to a width 7W of the slot 7_1, and the short sides 7_L1, 7_L2 of the slot 7_1 each correspond to a length 7L of the slot 7_1. The slot 7_1 is configured such that the midpoints of the long sides 7_W1, 7_W2 overlap (are aligned with) a center line of the upper conductor layer 6_U (which coincides with the section line AA' in the same figure). Furthermore, a distance 7P between the slots corresponds to a distance between a center line 7C of the short sides 7_L1, 7_L2 of the slot 7_1 and a center line 7C of the short sides of the slot 7_2, which is adjacent to the slot 7_1.

[0023] In the first example, the short sides 7_L1, 7_L2 of each of the slots 7_1 to 7_3 are configured to extend along the DIR direction, and their long sides 7_W1, 7_W2 are configured to extend along a direction C-DIR orthogonal to the DIR direction. The distance 7P between adjacent slots below the slots has the same value as that between other adjacent slots. That is, each of the slots is configured such that its long side is orthogonal to the DIR direction of the pinch sensor 2, and its short side extends in the same direction as the DIR direction of the pinch sensor 2. On the lower conductor layer 6_D, however, no slot is formed, as shown in Fig. 3B shown.

[0024] In the same figure, reference numeral 12 denotes an input section of the linear conductor layer 5, and 13 denotes an output section of the linear conductor layer 5. In the first example, input section 12 corresponds to one end of the linear conductor layer 5, and output section 13 corresponds to the other end of the linear conductor layer 5. When the high-frequency signal 8 is applied to input section 12, it propagates towards output section 13. The high-frequency signal 8 is reflected by output section 13, and its reflected wave propagates in (along) the linear conductor layer 5 towards input section 12.

[0025] The propagation of the high-frequency signal 8 in the linear conductor layer 5 causes the linear conductor layer 5 to generate a magnetic field in which the positive or negative polarity alternates, and generates electric fields EFD8 that also alternately change. The generation of the alternating electric field EFD8 causes the generation of (positive and negative) potentials that change at one end of the slot 7_1, which in turn causes the generation of an electric field EFD7 around a section of the slot 7_1. Fig. Figure 3B illustrates the potentials and electric fields generated by the long sides 7_W1, 7_W2 of slot 7_1. Although slot 7_1 is explained here as an example, each of the other slots 7_2 to 7_3 also generates an electric field EFD7 along its slot section, similar to the above.

[0026] For example, if the dielectrically detected object 10 is located near slot 7_1, the electric field EFD7 generated at the section of slot 7_1 is subject to interference from (the detected object 10), causing a change in the electric fields EFD7. This change in the electric field EFD7 also causes a change in the electric field generated by the linear conductor layer 5. Therefore, the propagation characteristics of the linear conductor layer 5 vary, leading to a change in the reflection coefficients. This allows the proximity of the detected object 10 to be detected by the detection unit 3, as shown in Fig. 1 shown.

[0027] Since in Fig. If no slot is formed on the lower conductor layer 6_D, the propagation properties of the linear conductor layer 5 remain unchanged, even if the detected object 10 is near the lower conductor layer 6_D, and therefore the detected object 10 is not detected. This is an example where slots are formed on the upper conductor layer 6_U to detect the object 10 on its top side, but this example is not limited to this. That is, slots can be formed on the lower conductor layer 6_D, and slots can be formed on both the upper and lower conductor layers 6_U and 6_D. As long as slots are formed on at least one of the above conductor layers, the side on which the slots are formed can detect the object 10.

[0028] If a wavelength of the high-frequency signal 8 is shorter than any dimension (each of the short sides 7_L1, 7_L2 and the long sides 7_W1, 7_W2) of the slots 7_1 to 7_3, it can be assumed that the high-frequency signal 8 leaks from the slots 7_1 to 7_3 as an electrical wave(s). If the detected object 10 is near the slot, the variation in the reflection coefficients also makes it possible to detect whether the detected object 10 is near the slot. However, since unwanted electrical waves are emitted by the pinch sensor 2, each dimension of the slots 7_1 to 7_3 is preferably shorter than the wavelength of the high-frequency signal 8.

[0029] The lower conductor layer 6_D can also be connected to a predetermined voltage, such as an earth voltage Vs, or be in a potential-free state.

[0030] Next, a specific example of the pinch sensor 2 and a specific example of the detection unit 3 will be explained. <Erstes konkretes Beispiel des Einklemmsensors>

[0031] Fig. Figure 4 is a perspective view showing a configuration of the pinch sensor according to the first example. The pinch sensor 2 comprises: a dielectric layer 101; a front (upper) conductor layer 102; a rear (lower) conductor layer 103 formed on a bottom surface of the dielectric layer 101; and a linear conductor layer 104 embedded in the dielectric layer 101. In other words, the pinch sensor 2 comprises: the linear conductor layer 104; the front conductor layer 102, which faces the linear conductor layer 104; the rear conductor layer 103, which faces the linear conductor layer 104 and the front conductor layer 102; and a dielectric material located between the linear conductor layer 104, the front conductor layer 102, and the rear conductor layer 103.Furthermore, at least one or more openings are formed as slots 105 on one of the front and rear conductor layers 102, 103. Fig. Figure 4 shows an example in which a multitude of slots 105 are formed on (in) the front conductor layer 102.

[0032] The slots formed on the front conductor layer 102 each have the same structure. Each of the slots 105 has a rectangular shape when viewed from above, as shown in Fig. Figure 3 illustrates this. To give an example of a slot size of 105, a length (7L) of one short side (a length of the slot that 7_L1, 7_L2 of Fig. 3 corresponds) of the slot 105, which extends along the direction DIR in which the pinch sensor 2 extends, 1 mm, and a length (7W) of a long side (a width of the slot, which 7_W1, 7_W2 of Fig. 3 corresponds to) the length of slot 105, which is arranged orthogonally to the direction DIR in a direction C-DIR, is 15 mm. Furthermore, the distance between a center line between the long sides (7_W1, 7_W2) in the slot and a center line between these in the adjacent slot is 1.5 mm. That is, a distance (corresponds to 7P in Fig. 3) The distance between the slots is 2.5 mm. <messergebnisse>

[0033] The detected object 10 was a vessel filled with a phantom solution having the same dielectric constant (εr = ca. 38) as that of a human body model, and a change in reflection coefficients was measured in one case where the vessel was located near the in Fig. The clamping sensor 2 shown in Figure 4 was located in one case, and in another case where the container was not in its vicinity. The container had the following dimensions: 15 mm in length, 30 mm in width, and 15 mm in height.

[0034] Fig. Figure 5 is a characteristic curve field showing results measured using the pinch sensor according to the first example. Fig. 2 accordingly shows in Fig. Figure 5 shows a transverse axis representing frequencies of the high-frequency signal 8, and a longitudinal axis representing reflection coefficients. Furthermore, curve 21-1, represented in this figure by a solid line, is a characteristic curve showing a change in the reflection coefficients when the container serving as the detected object 10 was brought near the pinch sensor 2, and curve 20-1, represented by a dashed line, is a characteristic curve showing a change in the reflection coefficients when the container was not brought near the pinch sensor 2.

[0035] If the vessel (detected object) is not brought close, the reflection coefficient varies gently (gradually), as shown by curve 20-1 with an increase in the frequency of the radio frequency signal 8. When the vessel is brought close, the reflection coefficient increases with increasing frequency of the radio frequency signal 8. However, as shown by curve 21-1, the reflection coefficient varies significantly, by up to about 3 dB, when the frequency of the radio frequency signal 8 is in an ISM band of the 2.4 GHz zone.

[0036] Furthermore, a change in the reflection coefficients was measured under the condition that the length (7W) of the width (7_W1, 7_W2) of Fig. 3) the slot 105 is changed from 15 mm to 7.5 mm and the other conditions (the length of each slot and the distance between the slots) correspond to the conditions mentioned above. Fig. Figure 6 is a characteristic curve field showing the results measured when the length (7W) of the slot width is set to 7.5 mm.

[0037] In Fig. Figure 6 shows the characteristic curve when the container (detected object) is brought close to the pinch sensor 2, also represented by a solid line 21-2, and the characteristic curve when the container is not brought close to the pinch sensor 2, represented by a dashed line 20-2. As in Fig. Figure 6 shows that the reflection coefficient in an ISM band of the 5 GHz zone exhibited a significant change of about 10 dB when the vessel was in its vicinity.

[0038] The detection of the significant change in the reflection coefficients makes it possible to recognize the proximity of the detected object 10 to the pinch sensor 2. <Positionserkennung des erkannten Objekts>

[0039] In the first example, the multitude of slots 105 on the front conductor layer 102 are arranged along the DIR direction in which the pinch sensor 2 extends. That is, the slots 105 are arranged consecutively along the DIR direction. The electric fields are generated around sections of the respective slots 105. However, the electric field(s) generated around sections of one or more slots approaching the detected object 10 are subject to interference from the detected object 10, leading to a change in the field(s). Furthermore, the electric field generated around the linear conductor layer 104 modifies and influences the electric field generated at a position corresponding to a section of the slot exposed to interference from the detected object 10, resulting in a change in the reflection coefficients.Therefore, the detection of the change in reflection coefficients makes it possible to determine the position near which the detected object 10 is located.

[0040] Fig. Figure 7 is a characteristic curve field showing the characteristic curves of the pinch sensor 2 according to the first example. Fig. 2 accordingly also represents in Fig. Figure 7 represents a transverse axis representing frequencies of the high-frequency signal 8, and a longitudinal axis represents reflection coefficients. In this figure, a solid line is a characteristic curve showing a change in reflection coefficients as the vessel (detected object 10) approaches a position 30 mm from the input section 12 of the linear conductor layer 104. Accordingly, a dashed line is a characteristic curve showing a change in reflection coefficients as the vessel approaches a position 60 mm from the input section 12, and a dash-dotted line is a characteristic curve showing a change in reflection coefficients as the vessel approaches a position 90 mm from the input section 12. These characteristic curves were determined from the measurement results using the [reference to be added]. Fig. 4 shown pinch sensor 2 received.

[0041] In Fig. Arrows labeled with reference numeral 30 indicate frequencies at which the reflection coefficients on the characteristic curve become wave crests at a distance of 30 mm. Arrows labeled with reference numeral 60 indicate frequencies at which the reflection coefficients on the characteristic curve become wave crests at a distance of 60 mm, and arrows labeled with reference numeral 90 indicate frequencies at which the reflection coefficients on the characteristic curve become wave crests at a distance of 90 mm.

[0042] When the frequency of the high-frequency signal 8 is changed within a certain range (from 3.0 GHz to 6.5 GHz in the figure), the number of wave crests and the number of wave troughs, at which the reflection coefficients change (transitions), differ depending on the position towards which the vessel approaches, as shown in Fig. 7 is shown. That is, in Fig. 7 is the number of wave crests caused at the position 30 mm away, four; the number of wave crests caused at the position 60 mm away is three; and the number of wave crests caused at the position 90 mm away is two.

[0043] The detection unit 3 changes the frequency of the high-frequency signal 8 only within a predetermined range and determines the number of wave crests and troughs, at which the reflection coefficients change, within this range of the changed frequency. This enables the detection unit 3 to determine the position to which the detected object 10 is approaching using the pinch sensor 2 and to output the determined position as a detection signal 11. Even if several detected objects 10 are essentially in the vicinity of the pinch sensor 2 simultaneously, the detection unit is able to determine the position of each detected object. <Konfiguration der Erkennungseinheit 3>

[0044] Fig. Figure 8 is a block diagram showing a configuration of a detection device according to the first example. The configuration of the pinch sensor 2 is omitted, as it has already been explained. The detection unit 3 comprises a variable frequency generation circuit 30, an impedance matching resistor element 31, a diode (envelope detection circuit) 32, a low-pass filter 33, an analog-to-digital converter circuit (hereinafter referred to as the A / D converter circuit) 34, and a computing circuit 35.

[0045] The variable frequency generation circuit 30 generates one or more high-frequency signals. The frequency of the generated high-frequency signal is variable. Although not specifically restricted, the variable frequency generation circuit 30 generates the high-frequency signal with a frequency dependent on a control signal CNT. The generated high-frequency signal is fed as a high-frequency signal 8 to the input section 12 of the linear conductor layer 5 (104) via an impedance matching resistor element 31, which matches the impedance between the variable frequency generation circuit 30 and the input section 12. A cathode of the diode 32 is connected to the input section 12 of the linear conductor layer 5 (104), and an anode of the diode 32 is connected to an input of the low-pass filter 33.

[0046] Diode 32 detects the envelope of a standing (stationary) wave. That is, a waveform (propagating wave) of the high-frequency signal 8 and a reflected wave 9 are mixed in the input section 12. The frequency change of the high-frequency signal 8 causes the propagating wave and the reflected wave to coincide, and the moment of standing wave generation is created. The diode commutates this standing wave to output the standing wave envelope(s). The low-pass filter 33 outputs only one or more low-frequency components that are contained in one or more output signals from the diode. This results in the low-pass filter 33 outputting the standing wave envelope(s) with the high-frequency component(s) removed.

[0047] The A / D converter circuit 11 converts the envelope(s) of the standing wave output by the low-pass filter 33 into one or more digital signals and feeds them to the processing circuit 35. The processing circuit 35 compares a value (digital value) of the supplied standing wave with, for example, a reference value, and if the value exceeds the reference value, it outputs one or more detection signals 11 indicating that the detected object 10 has been detected.

[0048] The phase of the reflected wave 9 varies depending on the change in the reflection coefficients. Therefore, the detection unit 3 judges that the detected object 10 has been detected when the propagating wave and the reflected wave coincide and a large standing wave occurs that exceeds the reference value. When the position of the detected object 10 is determined, the detection unit 3 accordingly modifies the high-frequency signal 8 within a predetermined frequency range and then measures the frequency of the generated large standing waves, thereby determining the position of the detected object 10. That is, the in Fig. The detection unit 3 shown in Figure 8 detects a change in the size (change in amplitude) of the standing wave at the input section 12 as a change in the reflection coefficient of the input section 12. An example of the detection of the change in the reflection coefficient was explained using the standing wave that arises from mixing the high-frequency signal 8, which serves as the propagating wave, with the reflected wave 9, but the detection unit 3 can detect a change in the size (amplitude) of a mixing wave formed by the above mixing as a change in the reflection coefficient.

[0049] In Fig. Reference numerals 8 denote termination resistors 37 and 38. Termination resistors 37 and 38 are each connected between a ground value Vs and a switch 36. The switch 36 selects one of the termination resistors 37 or 38, or neither. That is, the switch 36 places the other end 13 of the linear conductor layer 5 (104) in an open state, in a state where it is connected to termination resistor 37, or in a state where it is connected to termination resistor 38. Although not specifically limited, termination resistor 37 has a value of 50 Ω, and termination resistor 38 has a value of 5 kΩ.

[0050] The above measurements of Fig. 2 and Fig. 5 to 7 were performed using the in Fig. The detection unit 3 shown in section 8 was used to measure the in Fig. The measurements shown in Figure 5 were carried out, for example, by connecting the terminating resistor element 37 to the end 13 via the switch 36. To measure the in Fig. The measurements shown in Figure 6 were carried out by connecting the terminating resistor element 38 to the end 13 via the switch 36. To measure the Fig. In the characteristic curves shown in 7, the end 13 was put into the open state by the switch 36.

[0051] The detection unit 3 can also contain the above switch 36 and the terminating resistor elements 37, 38. <Erstes Modifikationsbeispiel>

[0052] Fig. Figure 9 is a perspective view showing a configuration of a pinch sensor 2-1 according to a first modification example of the first example. Since Fig. 9 with Fig. Since 4 is comparable, the focus will mainly be on the difference between them.

[0053] In the first modification example, a multitude of vias 106 are formed on and within the dielectric layer 101, penetrating the dielectric layer 101, and conductor layers are embedded in the vias 106. This establishes an electrical and mechanical connection between the upper conductor layer 102 and the lower conductor layer 103. In this way, excessive deformation of the pinch sensor 2 during compression can be prevented. Furthermore, leakage of the electric field generated around the linear conductor layer 104 from one or more face(s) of the pinch sensor 2 can be reduced.

[0054] An example of the connection between the upper (front) conductor layer 102 and the lower (back) conductor layer 103 is shown by the conductor layer embedded in the vias 106. However, a configuration can be chosen in which the side surface(s) of the pinch sensor 2 exposed on the dielectric layer 101 is / are covered with one or more lateral conductor layers, and the upper conductor layer 102 and the lower conductor layer 103 are electrically and mechanically connected by the lateral conductor layer. <Zweites Modifikationsbeispiel>

[0055] Fig. Figure 10 is a perspective view showing a configuration of a pinch sensor 2-2 according to a second modification example of the first example. Since also Fig. 10 of Fig. 4 corresponds, the main focus is on the difference between them.

[0056] In the second modification example, the slots 705 comprise: slots (first slots) arranged on the upper conductor layer 102 along the DIR direction in which a pinch sensor 2-2 extends; and slots (second slots) arranged on the upper conductor layer 102 along the C-DIR direction orthogonal to the DIR direction. This prevents a length (7W) (each of the long sides 7_W1, 7_W2) from being formed in the width. Fig. 3A) of each slot increases. Since the width of each slot is reduced (shortened), it can be prevented that unwanted high frequencies leak from the slot, even if the frequency of the high-frequency signal 8 is increased.

[0057] The above example describes a configuration where slots of the same size and spacing are formed on (in) the conductor layer; however, the second modification example is not limited to this. That is, the number of slots can be one. Furthermore, the size of the slots can differ if multiple slots are formed on the conductor layer, and the spacing between adjacent slots can differ from the spacing between other adjacent slots. If the plurality of slots are arranged along the DIR direction, as in the example above, the configuration can be further modified. Fig. As shown in Figure 4, it is desirable, however, to determine the size and spacing of the slots and the frequency of the high-frequency signal 8 such that the slots lie (fall) within a wavelength range of the high-frequency signal 8. (Second example (execution form))

[0058] A second example, representing an embodiment of the invention, provides a configuration of a detection device capable of determining each position of a plurality of detected objects when the detected objects approach a pinch sensor essentially simultaneously. Fig. Figure 11 is a block diagram showing a configuration of a detection device according to the second example (of the embodiment). Fig. 11 with Fig. Since 8 is comparable, the main focus will be on the difference between them. The terminating resistor elements 37, 38 and the switch 36, which are in Fig. The numbers shown in section 8 are omitted. Fig. 11.

[0059] In the detection device, which is in Fig. As shown in section 11, the comparisons were as follows: Fig. 8. A diode, a low-pass filter, and an A / D converter circuit were added. Fig. 11 The reference symbols 32_1, 33_1, 34_1 correspond to the diode 32, the low-pass filter 33 and the A / D converter circuit 34 respectively, which are in Fig. 8 explained. A cathode of the diode 32_1 is connected to a terminal N1, which connects the input section 12 to the impedance matching resistor element 31.

[0060] A cathode of diode 32_2, added in the second example (of the embodiment), is connected to a terminal N2, which is only a predetermined distance PDF from terminal N1 on a wiring LL. The additional low-pass filter 33_2 and the additional A / D converter circuit 34_2 are connected between an anode of diode 32_2 and a computing circuit 35.

[0061] In the second example (of the embodiment), diode 32_2 outputs an envelope of a standing wave with a delay time of only a predetermined distance PDF compared to diode 32_1. This provides the computing circuit 35 with digital signals from two standing waves whose phase difference corresponds to the predetermined distance PDF.

[0062] For example, a case is explained in which two detected objects (hereinafter referred to as the first detected object and the second detected object) are located near the pinch sensor at essentially the same time. Since the position of the first detected object differs from the position of the second detected object, the periodic characteristic of a standing wave caused by the first detected object differs from the periodic characteristic of a standing wave caused by the second detected object. This makes it possible to detect that multiple detected objects are present. Furthermore, a phase difference between the standing wave detected at connection point N1 and the standing wave detected at connection point N2 allows the position of each detected object to be determined.The computing circuit 35 performs such processing through an operation and outputs the detection signal 11.

[0063] Furthermore, patent document 3 discloses a distance measuring device that obtains a distance by detecting two standing waves using one or more electric waves. However, patent document 3 does not disclose the generation of one or more electric fields using one or more slits, nor the detection of a detected object and the determination of its position based on a change in reflection coefficients. <kalibrierung>

[0064] In the first and second examples (of the embodiment), the proximity of the detected object is determined by the change in the reflection coefficient. It is desirable to perform a calibration to determine the proximity of the detected object based on the change in the reflection coefficient. That is, before the actual use of the detection device 1, the detected object is moved to a position relative to the clamping sensor 2 that is judged to be close, and a change in the reflection coefficient at this time is set as a reference value. During actual use of the detection device 1, the detection of the object is carried out in such a way as to determine when the reflection coefficient exceeds the change in the reference value. Therefore, the reference value of the reflection coefficient must be determined beforehand through calibration.

[0065] For example, if the in Fig. When the detection unit 3 shown in Figure 8 is used, the reference value for the reflection coefficient is determined as follows. Calibration is performed before the actual use of the detection device 1. In a calibration process, the detected object is moved to a position where it is judged that the detected object is nearby, the frequency of the high-frequency signal 8 is varied, and a digital value corresponding to a standing wave is determined and held as the reference value. The held reference value is set in the computing circuit 35, and the computing circuit 35 compares the reference value set in the computing circuit 35 with a digital value obtained from the A / D converter circuit 34 before actual use. <anwendungsbeispiel>

[0066] Next, an application example for the use of the detection device 1, as described in the first and second examples (of embodiment), will be explained. This example describes the installation of the detection device 1 in a motor vehicle. Fig. Figure 12 is an explanatory illustration to explain a vehicle mounting of the detection device according to the first and second examples (of the embodiment).

[0067] In Fig. In Figure 12, reference numeral 40 denotes a motor vehicle. A left side of the figure represents a right side face of the motor vehicle 40, and a right side of the figure represents a left side face of the motor vehicle 40. A transmission channel (transmission path) is arranged (installed) as a body of the pinch sensor 2 at a right rear door 41_R and a left rear door 41_L of the motor vehicle 40. In this case, the body of the pinch sensor 2 has: a sensor section 2_R, 2_L in which the slots are formed; and a transmission channel section 2_N in which no slot is formed. The sensor section 2_R is arranged at the corresponding right rear door 41_R, and the sensor section 2_L is arranged at the corresponding left rear door 41_L.The transmission channel section 2_N is a section that electrically connects the sensor sections 2_R and 2_L and is installed in the vehicle of the motor vehicle 40.

[0068] Before a human body etc. is trapped by at least one of the right rear door 41_R and the left rear door 41_L, the detection unit 3 recognizes the human body etc. as a detected object and notifies a driver of the detection by means of the detection signal 11.

[0069] According to the first and second examples (of the embodiment), by changing the capacitance, the transmission channel with the lower loss than the pinch sensor 2 can be used instead of detecting the object. This allows the body of the pinch sensor 2 to be used for both the right and left doors. Furthermore, according to the first and second examples (of the embodiment), determining whether pinching occurs at one of the rear doors can also be done using the body of the pinch sensor, since determining the position of the detected object is also possible.

[0070] Furthermore, in an area (section) where the detection of the detected object is not required, the transmission channel section is formed instead of the slot, thus preventing unnecessary notification of the driver.

[0071] Additionally, the above body of the anti-pinch sensor 2 can also be arranged (installed) on the doors 42_R, 42_L on the driver's seat and passenger's seat sides.

[0072] The invention has been described in detail above with reference to examples and one embodiment. However, it is understood that the present invention is not limited to this and that various modifications and alterations are possible to an extent that does not deviate from the subject matter of the claims. Fig. Figure 4, for example, represents the case of a linear conductor layer whose cross-section is rectangular, but the linear conductor layer can have a circular or oval cross-section.< / anwendungsbeispiel> < / kalibrierung> < / messergebnisse>

Claims

[1] Detection device (1) comprising: a recognized element (2) which has: a dielectric layer (4; 101) on which a linear conductor layer (5; 104) is formed; Conductor layers (6; 6_U, 6_D; 102, 103) arranged on the top and bottom sides of the dielectric layer (4; 101); a transmission channel, wherein a slot (7; 7_1 ~ 7_3; 105; 705) is formed in the transmission channel and on at least one (6_U; 102) of the conductor layers (6; 6_U, 6_D; 102, 103) arranged on the top and bottom sides, and a detection unit (3) configured to supply a high-frequency signal (8) to an input portion (12) of the linear conductor layer (5; 104) and to generate an electric field around a slot portion of the conductor layer (6_U; 102) on which the slot (7; 7_1 ~ 7_3; 105; 705) is formed, and to detect a change in the reflection coefficient at the input portion (12), the change being caused by a change in the electric field generated by interference with a detected object (10), where: the detection unit (3) is arranged to detect standing waves at the input section (12) which differ from one another in their phases. [2] Detection device according to claim 1, wherein the transmission channel has, as a slot (7; 7_1 ~ 7_3; 105; 705), a plurality of slots (7_1 - 7_3; 105; 705) from which the slot (7; 7_1 - 7_3; 105; 705) is composed, and the slots (7_1 - 7_3; 105; 705) extend along an extending direction of the linear conductor layer (5; 104) and comprise a plurality of first slots (7_1 - 7_3; 105; 705) formed on the conductor layer (6_U; 102). [3] Detection device according to claim 2, wherein the conductor layers (6; 6_U, 6_D; 102, 103) arranged on the top and bottom sides are electrically connected to one another. [4] A detection device according to claim 2, wherein the slits (7_1 - 7_3; 105; 705) comprise a plurality of second slits (705) formed in a direction orthogonal to the extending direction of the linear conductor layer (5; 104). [5] A detection device according to claim 1, wherein the detection unit (3) comprises a wiring (LL) connected to the input section (12) and an envelope detection circuit (32_1, 32_2) that detects envelopes of standing waves at a plurality of connection points (N1, N2) whose positions on the wiring (LL) are different from each other. [6] A detection device according to claim 2, wherein the transmission channel is common to a plurality of doors (41_R, 41_L) of a vehicle, and the plurality of first slits (7_1 - 7_3; 105; 705) are formed at portions on the transmission channel corresponding to the respective doors (41_R, 41_L). [7] A detection device according to claim 1, wherein the change in the reflection coefficient is judged on the basis of a reference value obtained by calibration.

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