Integrated Hall sensor device and method for measuring a magnetic field using an integrated Hall sensor device

Abstract

Integrated Hall sensor device for measuring a magnetic field with a semiconductor chip (2) which is aligned parallel to an xy-plane spanned by an x-axis and a y-axis of a three-dimensional Cartesian coordinate system; a first Hall sensor (3) for generating a first magnetic field measurement signal (MS1), which has a first vertical Hall element (4) which is designed on the semiconductor chip (2) such that, if it is mechanically stress-free, the first magnetic field measurement signal (MS1) depends on a component (MFKX) of the magnetic field acting parallel to the x-axis and is independent of a component (MFKY) of the magnetic field acting parallel to the y-axis; a second Hall sensor (5) for generating a second magnetic field measurement signal (MS2), which has a second vertical Hall element (6) which is designed on the semiconductor chip (2) such that, provided it is mechanically stress-free, the second magnetic field measurement signal (MS2) depends on the component (MFKY) of the magnetic field acting parallel to the y-axis and is independent of the component (MFKX) of the magnetic field acting parallel to the x-axis; a first voltage sensor (7) for measuring mechanical stresses in the semiconductor chip (2), wherein the first voltage sensor (7) is configured to generate a first shear stress measurement signal (SMS1) which corresponds to a first shear stress (SSP1) acting on the first vertical Hall element (4), which acts in a plane perpendicular to the x-axis and parallel to the y-axis; and an evaluation device (8) for determining one or more properties (EDM) of the magnetic field as a function of the first magnetic field measurement signal (MS1), as a function of the second magnetic field measurement signal (MS2) and as a function of the first shear stress measurement signal (SMS1).

Description

AREA OF INVENTION

[0001] Exemplary embodiments relate to an integrated Hall sensor device for measuring a magnetic field. Specifically, exemplary embodiments relate to an integrated Hall sensor device based on Hall sensors, each of which has a vertical Hall element. BACKGROUND

[0002] The magnetic field measurement signal of a vertical Hall sensor depends not only on the value of the magnetic field but also on its angular position relative to the sensor. When the sensor's vertical Hall element is exposed to a uniformly rotating magnetic field, the resulting signal exhibits a sinusoidal waveform along a time axis. However, an undesirable phase difference can occur between the actual phase of the magnetic field and the phase of the measurement signal. This can lead to inaccuracies in both determining the magnetic field value and its angular position.

[0003] From reference [5] an integrated Hall sensor device for measuring a magnetic field is known, comprising a semiconductor chip, a first Hall sensor, a second Hall sensor and an evaluation device.

[0004] The task to be solved is to improve an integrated Hall sensor device for measuring a magnetic field of the type described above. SUMMARY OF THE INVENTION

[0005] An integrated Hall sensor device for measuring a magnetic field is revealed. a semiconductor chip which is aligned parallel to an xy-plane spanned by an x-axis and a y-axis of a three-dimensional Cartesian coordinate system; a first Hall sensor for generating a first magnetic field measurement signal, which has a first vertical Hall element, which is designed on the semiconductor chip in such a way that, provided it is mechanically stress-free, the first magnetic field measurement signal depends on a component of the magnetic field acting parallel to the x-axis and is independent of a component of the magnetic field acting parallel to the y-axis; a second Hall sensor for generating a second magnetic field measurement signal, which has a second vertical Hall element, which is designed on the semiconductor chip in such a way that, provided it is mechanically stress-free, the second magnetic field measurement signal depends on the component of the magnetic field acting parallel to the y-axis and is independent of the component of the magnetic field acting parallel to the x-axis; a first stress sensor for measuring mechanical stresses in the semiconductor chip, wherein the first stress sensor is configured to generate a first shear stress measurement signal which corresponds to a first shear stress acting on the first vertical Hall element, which acts in a plane perpendicular to the x-axis and parallel to the y-axis; and an evaluation device for determining one or more properties of the magnetic field depending on the first magnetic field measurement signal, depending on the second magnetic field measurement signal and depending on the first shear stress measurement signal.

[0006] The Cartesian coordinate system can be left-handed or right-handed.

[0007] An integrated Hall sensor device is a Hall sensor device in which at least one Hall element and at least part of the evaluation electronics for evaluating signals from the Hall element are arranged on a chip, usually a few millimeters in size, made of a semiconductor material. This chip is also called a semiconductor chip. The Hall element and the evaluation electronics arranged on the semiconductor chip together form a Hall sensor.

[0008] Hall elements consist of thin, doped crystalline semiconductor layers with multiple electrodes. A current is applied through some of the electrodes, while a Hall voltage is measured through others. When such a Hall sensor is subjected to a magnetic field, it produces an output voltage proportional to the signed magnitude of the vector product of magnetic flux density and current. This is due to the Lorentz force acting on the moving majority charge carriers within the Hall element.

[0009] In vertical Hall sensors, the magnetic flux density is measured parallel to the surface of the semiconductor chip. Vertical Hall sensors are not necessarily constructed as thin films. Examples can be found in [4] (see there). Fig. 1c and Appendix C). Examples are also given in the following Fig. 7, Fig. 8, Fig. 9 and Fig. 10 to watch.

[0010] Vertical Hall sensors can consist of a single doped well or of several wells interconnected by contacts and conductive traces. A well can have 3, 4, 5, or more contacts. In plan view, a well typically has an elongated rectangular shape, but can also have a squat, nearly square shape or a ring shape. The present disclosure relates primarily to systems with vertical Hall sensors whose wells are made of single-crystal semiconductor material, in particular silicon, especially n-doped silicon (doped with As or P), and especially with dopant concentrations between 10^15 / cm³. 3 and 5*10^17 / cm 3The wells are usually electrically isolated from the rest of the chip by reverse-biased pn junctions or non-conductive dielectric layers (shallow or deep trench isolation), or by SOI (silicon-on-insulator) technology. The depth of the wells is typically between 15 µm and 2 µm.

[0011] The first Hall sensor is arranged on the semiconductor chip such that its first magnetic field measurement signal detects only the x-component of the magnetic field, but not the y-component, provided its first Hall element is mechanically stress-free. This feature is not to be understood in a mathematical sense, but rather in a technical one. It is known to those skilled in the art that, particularly at higher magnetic flux densities, a slight dependence on the y-component of the magnetic field is unavoidable for technical reasons. Within the framework of the proposed integrated Hall sensor device, it is sufficient if the first magnetic field measurement signal is independent of the y-component of the magnetic field under the condition µh x abs(B) < 0.1, where µh is the Hall mobility in units of m. 2 / V / s, where abs(B) is the magnitude of the magnetic flux density in units of T. This condition corresponds to a Hall angle of less than 5.7°.

[0012] The second Hall sensor is arranged on the semiconductor chip such that its second magnetic field measurement signal detects only the y-component of the magnetic field, but not the x-component, provided its second Hall element is mechanically stress-free. Analogous to the above, this feature is not to be understood in a mathematical sense, but in a technical one. It is known to those skilled in the art that, particularly at higher magnetic flux densities, a slight dependence on the x-component of the magnetic field is unavoidable for technical reasons. Within the framework of the proposed integrated Hall sensor device, it is sufficient if the second magnetic field measurement signal is independent of the x-component of the magnetic field under the condition µh × abs(B) < 0.1, where uh is the Hall mobility in units of m. 2 / V / s is, and where abs(B) is the magnitude of the magnetic flux density in the unit T.

[0013] The two vertical Hall elements are mechanically stress-free when they are not subjected to external mechanical forces. The two vertical Hall elements can be designed as described in [1].

[0014] The first voltage sensor can be a conventional voltage sensor, such as in Fig. 16.7 or Fig. 16.13 of the reference [2] or in Fig. 19 of the reference [3] described.

[0015] The evaluation unit is designed to determine one or more properties of the magnetic field as a function of the first magnetic field measurement signal, as a function of the second magnetic field measurement signal, and as a function of the first shear stress measurement signal. This can be expressed mathematically in a general way by the equation E=f(Voutx,Vouty,VsigmaXY) can be expressed as follows: E is the respective property of the magnetic field, Voutx is the value of the first magnetic field measurement signal, Vouty is the value of the second magnetic field measurement signal, and VsigmaXY is the value of the first shear stress measurement signal. A suitable function f can be determined, for example, through experiments or computational simulations.

[0016] The described integrated Hall sensor device is based on the understanding that measurement inaccuracies in devices of this type can be generated or amplified by variable mechanical stresses occurring during operation of the Hall sensor device. A further finding is that initial shear stresses acting on the first vertical Hall element, which operate in a plane perpendicular to the x-axis and parallel to the y-axis, account for a significant proportion of the measurement inaccuracies generated or amplified by variable mechanical stresses occurring during operation of the Hall sensor device.

[0017] In the described integrated Hall sensor device, such measurement inaccuracies are compensated, i.e., avoided or at least significantly reduced, so that the respective sought-after property of the magnetic field can be measured more accurately.

[0018] The described integrated Hall sensor device can be used, for example, in a magnetic angle sensor or in a gauss meter.

[0019] In exemplary embodiments, one or more properties of the magnetic field include a value for the x-direction component of the magnetic field. This value consists of a magnitude and a sign for the x-direction component of the magnetic field. This can be mathematically represented by the equation Bx=f1(Voutx,Vouty,VsigmaXY) The function f1 can be expressed as follows: Bx is the value of the component of the magnetic field acting in the x-direction, Voutx is the value of the first magnetic field measurement signal, Vouty is the value of the second magnetic field measurement signal, and VsigmaXY is the value of the first shear stress measurement signal. A suitable function f1 can be determined, for example, through experiments or computational simulations.

[0020] In exemplary embodiments, one or more properties of the magnetic field include a value for the component of the magnetic field acting in the y-direction. This value consists of a magnitude and a sign for the component of the magnetic field acting in the y-direction. This can be mathematically represented by the equation By=f2(Voutx,Vouty,VsigmaXY) can be expressed as follows: by By being the value of the component of the magnetic field acting in the y-direction, by Voutx being the value of the first magnetic field measurement signal, by Vouty being the value of the second magnetic field measurement signal, and by VsigmaXY being the value of the first shear stress measurement signal. A suitable function f2 can be determined, for example, through experiments or computational simulations.

[0021] In exemplary embodiments, one or more properties of the magnetic field include an angular orientation of the magnetic field in the xy-plane. This can be mathematically represented by the equation φ=f3(Voutx,Vouty,VsigmaXY) The function f3 can be expressed as follows: φ is the angular position of the magnetic field in the xy-plane, Voutx is the value of the first magnetic field measurement signal, Vouty is the value of the second magnetic field measurement signal, and VsigmaXY is the value of the first shear stress measurement signal. A suitable function f3 can be determined, for example, through experiments or computational simulations.

[0022] If the value of the component of the magnetic field acting in the x-direction and the value of the component of the magnetic field acting in the y-direction have already been determined, the angular position can be calculated according to the following equation: φ=f3(Voutx,Vouty,VsigmaXY)=arctan(By / Bx)

[0023] In exemplary embodiments, the integrated Hall sensor device comprises a second voltage sensor for generating a second shear stress measurement signal, which corresponds to a second shear stress acting on the second vertical Hall element, which acts in a plane perpendicular to the x-axis and parallel to the y-axis, wherein the evaluation device is designed to determine one or more properties of the magnetic field as a function of the first magnetic field measurement signal, as a function of the second magnetic field measurement signal, as a function of the first shear stress measurement signal and as a function of the second shear stress measurement signal.

[0024] The consideration of the second shear stress measurement signal can be mathematically described in general terms by the equation E=f4(Voutx,Vouty,VsigmaXY,VsigmaXY2) can be expressed as follows: E is the respective property of the magnetic field, Voutx is the value of the first magnetic field measurement signal, Vouty is the value of the second magnetic field measurement signal, VsigmaXY is the value of the first shear stress measurement signal, and VsigmaXY2 is the value of the second shear stress measurement signal. A suitable function f4 can be determined, for example, through experiments or computational simulations.

[0025] The second voltage sensor can be constructed analogously to the first voltage sensor described above. Such embodiments can further increase the measurement accuracy, particularly if the first vertical Hall element and the second vertical Hall element are subjected to significantly different shear stresses. This can be the case, for example, if the semiconductor chip is highly structured or if the first vertical Hall element and the second vertical Hall element are positioned far apart.

[0026] In exemplary embodiments, the evaluation device for determining the value of the component of the magnetic field acting in the x-direction is designed on the basis of a first linear combination of the first magnetic field measurement signal and the second magnetic field measurement signal. wherein the evaluation device is designed to determine a first coefficient of the first linear combination and / or a second coefficient of the first linear combination as a function of the first shear stress measurement signal.

[0027] The first linear combination has the form Bx=a×Voutx+b×Vouty on, where Voutx is the value of the first magnetic field measurement signal, where Vouty is the value of the second magnetic field measurement signal, where a is the first coefficient and b is the second coefficient.

[0028] The following applies: a=f5(VsigmaXY) where a is the first coefficient, and where VsigmaXY is the value of the first shear stress measurement signal; and / or b=f6(VsigmaXY) where b is the second coefficient, and where VsigmaXY is the value of the first shear stress measurement signal.

[0029] Suitable functions f5 and f6 can be determined, for example, through experiments or computational simulations.

[0030] The following generally applies: Voutx=Sxx ×Bx+Sxy×By and Vouty=Syy ×By+Syx×Bx where Voutx is the value of the first magnetic field measurement signal, where Vouty is the value of the second magnetic field measurement signal, where Sxx is the magnetic sensitivity of the first Hall sensor, where Sxy is the magnetic cross-sensitivity of the first Hall sensor, where Syy is the magnetic sensitivity of the second Hall sensor, where Syx is the magnetic cross-sensitivity of the second Hall sensor.

[0031] From (10) and (11) it follows Bx=Syy / (−Sxy×Syx+Sxx×Syy)×Voutx+−Sxy / (−Sxy×Syx+Sxx×Syy)×Vouty, so that in conjunction (7) a=Syy / (−Sxy×Syz+Sxx×Syy) and b=−Sxy / (−Sxy×Syz+Sxx×Syy) results.

[0032] It is true that both the magnetic cross-sensitivity Sxy of the first Hall sensor and the magnetic cross-sensitivity Syx of the second Hall sensor depend strongly on the value VsigmaXY of the first shear stress measurement signal.

[0033] The influence of the VsigmaXY value of the first shear stress measurement signal on the cross-sensitivities Sxy=f7(VsigmaXY) and Syx=f8(VsigmaXY) This can be compensated for using suitable functions f7 and f8. These functions can be determined, for example, through experiments or computational simulations. In many cases, both the magnetic cross-sensitivity Sxy of the first Hall sensor and the magnetic cross-sensitivity Syx of the second Hall sensor are proportional to the value VsigmaXY of the first shear stress measurement signal. The proportionality factor can be a constant factor, which can be determined through experiments or simulations, to a good approximation.

[0034] Furthermore, the magnetic sensitivity of the first Hall sensor Sxx and the magnetic sensitivity of the second Hall sensor Syy may, albeit to a lesser extent, depend on the value VsigmaXY of the first shear stress measurement signal.

[0035] The influence of the VsigmaXY value of the first shear stress measurement signal on the magnetic sensitivities Sxx=f9(VsigmaXY) and Syy=f10(VsigmaXY) can be achieved using suitable functions f9 and f 10 The functions can be compensated for (17) and (18). These functions can be determined, for example, through experiments or computational simulations.

[0036] In exemplary embodiments, the evaluation device for determining the value of the component of the magnetic field acting in the x-direction is designed on the basis of a first linear combination of the first magnetic field measurement signal and the second magnetic field measurement signal. wherein the evaluation device is designed to determine a first coefficient of the first linear combination and / or a second coefficient of the first linear combination as a function of the first shear stress measurement signal and the second shear stress measurement signal.

[0037] The first linear combination is given by (7).

[0038] The following applies: a=f11(VsigmaXY,VsigmaXY2) where a is the first coefficient, where VsigmaXY is the value of the first shear stress measurement signal, and where VsigmaXY2 is the value of the second shear stress measurement signal; and / or b=f12(VsigmaXY,VsigmaXY2) where b is the second coefficient, where VsigmaXY is the value of the first shear stress measurement signal and where VsigmaXY2 is the value of the second shear stress measurement signal.

[0039] Suitable functions f 11 and f 12They can be determined, for example, through experiments or computer simulations.

[0040] Equations (10) to (14) apply analogously in this case as well. It follows that both the magnetic cross-sensitivity Sxy of the first Hall sensor and the magnetic cross-sensitivity Syx of the second Hall sensor depend strongly on the value VsigmaXY of the first shear stress measurement signal and strongly on the value Vsigma XY2 of the second shear stress measurement signal.

[0041] The influence of the value VsigmaXY of the first shear stress measurement signal and the value VsigmaXY2 of the second shear stress measurement signal on the cross-sensitivities Sxy=f13(VsigmaXY) and Syx=f14(VsigmaXY2) can be achieved using suitable functions f 13 and f 14 These factors must be taken into account. The functions can be determined, for example, through experiments or computational simulations.

[0042] In exemplary embodiments, the evaluation device for determining the component of the magnetic field acting in the y-direction is designed on the basis of a second linear combination of the first magnetic field measurement signal and the second magnetic field measurement signal. wherein the evaluation device is designed to determine a first coefficient of the second linear combination and / or a second coefficient of the second linear combination as a function of the first shear stress measurement signal.

[0043] The second linear combination has the form By=c×Voutx+d×Vouty on, where Voutx is the value of the first magnetic field measurement signal, where Vouty is the value of the second magnetic field measurement signal, where c is the first coefficient and d is the second coefficient of the second linear combination.

[0044] The following applies: c=f15(VsigmaXY) where c is the first coefficient, and where VsigmaXY is the value of the first shear stress measurement signal; and / or d=f16(VsigmaXY) where d is the second coefficient, and where VsigmaXY is the value of the first shear stress measurement signal.

[0045] From (10) and (11) it follows By=Syx / (~Sxy×Syx−Sxx×Syy)×Voutx+−Sxx / (Sxy×Syx−Sxx×Syy)×Vouty, so that in conjunction (21) c=Syx / (−Sxy×Syx−Sxx×Syy) and d=−Sxx / (Sxy×Syx−Sxx×Syy) results.

[0046] It is true that both the magnetic cross-sensitivity Sxy of the first Hall sensor and the magnetic cross-sensitivity Syx of the second Hall sensor depend strongly on the value VsigmaXY of the first shear stress measurement signal.

[0047] The influence of the VsigmaXY value of the first shear stress measurement signal on the cross-sensitivities Sxy and Syx can be taken into account using suitable functions f7 and f6. These functions can be determined, for example, through experiments or computational simulations.

[0048] In exemplary embodiments, the evaluation device for determining the value of the component of the magnetic field acting in the y-direction is designed on the basis of a second linear combination of the first magnetic field measurement signal and the second magnetic field measurement signal, wherein the evaluation device is designed to determine a first coefficient of the second linear combination and / or a second coefficient of the second linear combination as a function of the first shear stress measurement signal and the second shear stress measurement signal.

[0049] The following applies: c=f17(VsigmaXY,VsigmaXY2) where c is the first coefficient, where VsigmaXY is the value of the first shear stress measurement signal, and where VsigmaXY2 is the value of the second shear stress measurement signal; and / or d=f18(VsigmaXY,VsigmaXY2) where d is the second coefficient, where VsigmaXY is the value of the first shear stress measurement signal, and where VsigmaXY2 is the value of the second shear stress measurement signal.

[0050] Equations (26), (27) and (28) apply analogously. It follows that both the magnetic cross-sensitivity Sxy of the first Hall sensor and the magnetic cross-sensitivity Syx of the second Hall sensor depend strongly on the value VsigmaXY of the first shear stress measurement signal and strongly on the value VsigmaXY2.

[0051] The influence of the value VsigmaXY of the first shear stress measurement signal and the value VsigmaXY2 of the second shear stress measurement signal on the cross-sensitivities Sxy=f19(VsigmaXY) and Syx=f20(VsigmaXY2) can be achieved using suitable functions f 19 and f 20 These factors must be taken into account. The functions can be determined, for example, through experiments or computational simulations.

[0052] In exemplary embodiments, the integrated Hall sensor device has a first normal voltage sensor for generating a first normal voltage measurement signal, which corresponds to a first normal voltage in the semiconductor chip, acting in the x-direction, wherein the integrated Hall sensor device has a second normal voltage sensor for generating a second normal voltage measurement signal, which corresponds to a second normal voltage in the semiconductor chip, acting in the y-direction. wherein the evaluation device is designed to determine the first coefficient of the first linear combination and / or the second coefficient of the first linear combination as a function of the first normal voltage measurement signal and the second normal voltage measurement signal.

[0053] The consideration of the first normal voltage measurement signal and the second normal voltage measurement signal can be mathematically described in a general way by the equation E=f21(Voutx,Vouty,VsigmaXY,VsigmaXX,VsigmaYY) or by the equation E=f22(Voutx,Vouty,VsigmaXY,VsigmaXY2,VsigmaXX,VsigmaYY) expressed where E is the respective property of the magnetic field, where Voutx is the value of the first magnetic field measurement signal, where Vouty is the value of the second magnetic field measurement signal, where VsigmaXY is the value of the first shear stress measurement signal, where VsigmaXY2 is the value of the second shear stress measurement signal, where VsigmaXX is the value of the first normal stress measurement signal, and where VsigmaYY is the value of the second normal stress measurement signal. A suitable function f 21 or f 22 can be determined, for example, through experiments or computer simulations.

[0054] Equations (10) to (14) apply analogously here as well. However, it has been shown that both the magnetic cross-sensitivity Sxy of the first Hall sensor and the magnetic cross-sensitivity Syx of the second Hall sensor do not depend solely on the values ​​VsigmaXY and / or VsigmaXY2 of the first and second shear stress measurement signals, respectively. The magnetic cross-sensitivity Sxy of the first Hall sensor exhibits a dependence, albeit a weaker one, on the first normal stress, so that considering a value VsigmaXX of the first normal stress measurement signal when determining the magnetic cross-sensitivity Sxy of the first Hall sensor leads to a further improvement in measurement accuracy.Similarly, the magnetic cross-sensitivity Syx of the second Hall sensor shows a dependence on the second normal voltage, albeit a weaker one, so that taking into account the value Vsigma YY of the second normal voltage measurement signal when determining the magnetic cross-sensitivity Syx of the second Hall sensor leads to a further improvement in measurement accuracy.

[0055] The influence of the values ​​VsigmaXX and VsigmaYY of the first and second normal voltage measurement signals on the cross-sensitivity Sxy=f23(VsigmaXY,VsigmaXX,VsigmaYY) can be achieved using suitable functions f 23 These factors must be taken into account. The functions can be determined, for example, through experiments or computational simulations.

[0056] The influence of the values ​​VsigmaXX and VsigmaYY of the first and second normal voltage measurement signals on the cross-sensitivity Syx=f24(VsigmaXY,VsigmaXX,VsigmaYY) or Syx=f25(VsigmaXY2,VsigmaXX,VsigmaYY) can be achieved using suitable functions f 24 or f 25 These factors must be taken into account. The functions can be determined, for example, through experiments or computational simulations.

[0057] The influence of the values ​​VsigmaXX and VsigmaYY of the first and second normal voltage measurement signals on the magnetic sensitivity Sxx=f26(VsigmaXX,VsigmaYY) can be achieved using suitable functions f 26 These factors must be taken into account. The functions can be determined, for example, through experiments or computational simulations.

[0058] The influence of the values ​​VsigmaXX and VsigmaYY of the first and second normal voltage measurement signals on the magnetic sensitivity Syy=f27(VsigmaXX,VsigmaYY) can be achieved using suitable functions f 27These factors must be taken into account. The functions can be determined, for example, through experiments or computational simulations.

[0059] In exemplary embodiments, the integrated Hall sensor device has a first normal voltage sensor for generating a first normal voltage measurement signal, which corresponds to a first normal voltage in the semiconductor chip, acting in the x-direction, wherein the integrated Hall sensor device has a second normal voltage sensor for generating a second normal voltage measurement signal, which corresponds to a second normal voltage in the semiconductor chip, acting in the y-direction. wherein the evaluation device is designed to determine the first coefficient of the second linear combination and / or the second coefficient of the second linear combination as a function of the first normal voltage measurement signal and the second normal voltage measurement signal.

[0060] Equations (26), (27) and (28) apply in this case, as do equations (35), (36), (37), (38) and (39) analogously.

[0061] In exemplary embodiments, the integrated Hall sensor device comprises a first normal voltage sensor for generating a first normal voltage measurement signal, which corresponds to a first normal voltage acting on the first vertical Hall element in the semiconductor chip, acting in the x-direction, wherein the integrated Hall sensor device comprises a second normal voltage sensor for generating a second normal voltage measurement signal, which corresponds to a second normal voltage acting on the first vertical Hall element in the semiconductor chip, acting in the y-direction. wherein the integrated Hall sensor device includes a third normal voltage sensor for generating a third normal voltage measurement signal, which corresponds to a third normal voltage acting on the second vertical Hall element in the semiconductor chip, which acts in the x-direction, wherein the integrated Hall sensor device includes a fourth normal voltage sensor for generating a fourth normal voltage measurement signal, which corresponds to a fourth normal voltage acting on the second vertical Hall element in the semiconductor chip, which acts in the y-direction, wherein the evaluation device is designed to determine the first coefficient of the first linear combination and / or the second coefficient of the first linear combination as a function of the first normal voltage measurement signal and the second normal voltage measurement signal, and wherein the evaluation device is designed to determine the first coefficient of the second linear combination and / or the second coefficient of the second linear combination as a function of the third normal voltage measurement signal and the fourth normal voltage measurement signal.

[0062] The consideration of the first normal voltage measurement signal, the second normal voltage measurement signal, the third normal voltage measurement signal and the fourth normal voltage measurement signal can be mathematically described in a general way by the equation E=f28(Voutx,Vouty,VsigmaXY,VsigmaXX,VsigmaYY,VsigmaXX2,VsigmaYY2) or by the equation E=f29(Voutx,Vouty,VsigmaXY,VsigmaXY2,VsigmaXX,VsimgaYY,VsigmaXX2,VsigmaYY2) expressed where E is the respective property of the magnetic field, where Voutx is the value of the first magnetic field measurement signal, where Vouty is the value of the second magnetic field measurement signal, where VsigmaXY is the value of the first shear stress measurement signal, where VsigmaXY2 is the value of the second shear stress measurement signal, where VsigmaXX is the value of the first normal stress measurement signal, where VsigmaYY is the value of the second normal stress measurement signal, where VsigmaXX2 is the value of the third normal stress measurement signal, and where VsigmaYY2 is the value of the fourth normal stress measurement signal. A suitable function f 28 or f 29 can be determined, for example, through experiments or computer simulations.

[0063] The influence of the values ​​VsigmaXX and VsigmaYY of the first and second normal voltage measurement signals on the cross-sensitivity Sxy=f30(VsigmaXY,VsigmaXX,VsigmaYY) can be achieved using suitable functions f27 These factors must be taken into account. The functions can be determined, for example, through experiments or computational simulations.

[0064] The influence of the values ​​VsigmaXX2 and VsigmaYY2 of the third and fourth normal voltage measurement signals on the cross-sensitivity Syx=f31(VsigmaXY, VsigmaXX2, VsigmaYY2) or Syx=f32(VsigmaXY2, VsigmaXX2, VsigmaYY2) can be achieved using suitable functions f 31 or f 32 These factors must be taken into account. The functions can be determined, for example, through experiments or computational simulations.

[0065] The influence of the values ​​VsigmaXX and VsigmaYY of the first and second normal voltage measurement signals on the magnetic sensitivity Sxx=f33(Vsigma XX, VsigmaYY) can be achieved using suitable functions f 33 These factors must be taken into account. The functions can be determined, for example, through experiments or computational simulations.

[0066] The influence of the values ​​VsigmaXX2 and VsigmaYY2 of the third and fourth normal voltage measurement signals on the magnetic sensitivity Syy=f34(Vsigma XX2, VsigmaYY2) can be achieved using suitable functions f 34 These factors must be taken into account. The functions can be determined, for example, through experiments or computational simulations.

[0067] In exemplary embodiments, a temperature sensor is formed on the semiconductor chip to generate a temperature measurement signal, wherein the temperature measurement signal corresponds to a temperature of the semiconductor chip. wherein the evaluation device is designed to determine the first coefficient of the first linear combination and / or the second coefficient of the first linear combination as a function of the temperature measurement signal.

[0068] The consideration of the temperature measurement signal can be mathematically described in a general way by the equation E=f35(Voutx,Vouty,VsigmaXY,VT) can be expressed as follows: E is the respective property of the magnetic field, Voutx is the value of the first magnetic field measurement signal, Vouty is the value of the second magnetic field measurement signal, VsigmaXY is the value of the first shear stress measurement signal, and VT is the value of the temperature measurement signal. A suitable function f can be determined, for example, through experiments or computational simulations.

[0069] Equations (10) to (14) apply analogously in this case as well. It follows that both the magnetic cross-sensitivity Sxy of the first Hall sensor and the magnetic cross-sensitivity Syx of the second Hall sensor also depend on the value VT of the temperature measurement signal.

[0070] The influence of the VT value of the temperature measurement signal on the cross-sensitivities Sxy=f36(VsigmaXY,VT) and Sxy=f37(VsigmaXY,VT) or Syx=f38(VsigmaXY2,VT) can be achieved using suitable functions f 36 , f 37 or f 38 These factors must be taken into account. The functions can be determined, for example, through experiments or computational simulations.

[0071] Furthermore, the magnetic sensitivity of the first Hall sensor Sxx and the magnetic sensitivity of the second Hall sensor Syy are, albeit to a lesser extent, dependent on the value VT of the temperature measurement signal.

[0072] The influence of the VT value of the temperature measurement signal on the magnetic sensitivities Sxx and Syy Sxx=f39(,VT) and Syy=f40(,VT) can be achieved using suitable functions f 39 and f 40 These can be compensated for. The functions can be determined, for example, through experiments or computational simulations.

[0073] In exemplary embodiments, a temperature sensor is formed on the semiconductor chip to generate a temperature measurement signal, wherein the temperature measurement signal corresponds to a temperature of the semiconductor chip. wherein the evaluation device is designed to determine the first coefficient of the second linear combination and / or the second coefficient of the second linear combination as a function of the temperature measurement signal.

[0074] Equations (26), (27) and (28) apply in this case, as do equations (47), (48), (49), (50), (51) and (52) analogously.

[0075] Furthermore, an angle measuring device with an integrated Hall sensor device of the described type and with a magnet rotatable about a z-axis of the coordinate system for generating the magnetic field is disclosed, wherein the integrated Hall sensor device is designed and arranged to detect an angular position of the magnet on the basis of the angular position of the magnetic field generated by the magnet.

[0076] Furthermore, a method for measuring a magnetic field using an integrated Hall sensor device comprising a semiconductor chip which is aligned parallel to an xy-plane spanned by an x-axis and a y-axis of a three-dimensional Cartesian coordinate system is disclosed, wherein the method comprises the following steps: Generating a first magnetic field measurement signal by means of a first Hall sensor, which has a first vertical Hall element, which is designed on the semiconductor chip such that, provided it is mechanically stress-free, the first magnetic field measurement signal depends on a component of the magnetic field acting parallel to the x-axis and is independent of a component of the magnetic field acting parallel to the y-axis; Generating a second magnetic field measurement signal using a second Hall sensor, which has a second vertical Hall element, which is designed on the semiconductor chip in such a way that, provided it is mechanically stress-free, the second magnetic field measurement signal depends on the component of the magnetic field acting parallel to the y-axis and is independent of the component of the magnetic field acting parallel to the x-axis; Measuring mechanical stresses in the semiconductor chip using a first stress sensor, wherein the first stress sensor is configured to generate a shear stress measurement signal which corresponds to a first shear stress acting on the first vertical Hall element, which acts in a plane perpendicular to the x-axis and parallel to the y-axis; and Determining one or more properties of the magnetic field, using an evaluation device, as a function of the first magnetic field measurement signal, as a function of the second magnetic field measurement signal and as a function of the first shear stress measurement signal. BRIEF DESCRIPTION OF THE FIGURES

[0077] Exemplary embodiments of the present invention are described below with reference to the accompanying figures. Fig. Figure 1 shows a first embodiment of an integrated Hall sensor device in a schematic top view; Fig. Figure 2 shows a second embodiment of an integrated Hall sensor device in a schematic top view; Fig. Figure 3 shows a third embodiment of an integrated Hall sensor device in a schematic top view; Fig. Figure 4 shows a fourth embodiment of an integrated Hall sensor device in a schematic top view; Fig. Figure 5 shows a fifth embodiment of an integrated Hall sensor device in a schematic top view; Fig. Figure 6 shows a sixth embodiment of an integrated Hall sensor device in a schematic top view; Fig. Figure 7 shows an example of a first vertical Hall element in a first operating state in a schematic three-dimensional representation; Fig. Figure 8 shows the example of a first vertical Hall element in a second operating state in a schematic three-dimensional representation; Fig. Figure 9 shows exemplary excitation streamlines in a first vertical Hall element subjected to shear stress in a schematic top view; Fig. Figure 10 shows exemplary excitation streamlines in a second vertical Hall element subjected to shear stress in a schematic top view; and Fig. Figure 11 shows the use of an integrated Hall sensor device in a magnetic angle measuring device. DETAILED DESCRIPTION OF THE FIGURES

[0078] In the description below, identical or equivalent elements, or elements with the same or equivalent function, are designated by identical or equivalent reference symbols.

[0079] The features described serve to explain exemplary embodiments of the present invention in more detail. However, it is apparent to those skilled in the art that exemplary embodiments of the present invention can also be implemented by omitting individual features described below. Furthermore, features of the various exemplary embodiments described below can be combined with one another unless explicitly stated otherwise.

[0080] Fig. Figure 1 shows a first embodiment of an integrated Hall sensor device 1 in a schematic top view. The integrated Hall sensor device for measuring a magnetic field comprises a semiconductor chip 2 which is aligned parallel to an xy-plane spanned by an x-axis and a y-axis of a three-dimensional Cartesian coordinate system; a first Hall sensor 3 for generating a first magnetic field measurement signal MS1, which has a first vertical Hall element 4, which is designed on the semiconductor chip 2 such that, if it is mechanically stress-free, the first magnetic field measurement signal MS1 depends on a component MFKX of the magnetic field acting parallel to the x-axis and is independent of a component MFKY of the magnetic field acting parallel to the y-axis; a second Hall sensor 5 for generating a second magnetic field measurement signal MS2, which has a second vertical Hall element 6, which is designed on the semiconductor chip 2 such that, provided it is mechanically stress-free, the second magnetic field measurement signal MS2 depends on the component MFKY of the magnetic field acting parallel to the y-axis and is independent of the component MFKX of the magnetic field acting parallel to the x-axis; a first stress sensor 7 for measuring mechanical stresses in the semiconductor chip 2, wherein the first stress sensor 7 is configured to generate a first shear stress measurement signal SMS1, which corresponds to a first shear stress SSP1 acting on the first vertical Hall element 4, which acts in a plane perpendicular to the x-axis and parallel to the y-axis; and an evaluation device 8 for determining one or more properties EDM of the magnetic field as a function of the first magnetic field measurement signal MS1, as a function of the second magnetic field measurement signal MS2 and as a function of the first shear stress measurement signal SMS1.

[0081] Further illustrated Fig. 1 a method for measuring a magnetic field using an integrated Hall sensor device 1, which comprises a semiconductor chip 2 which is aligned parallel to an xy-plane spanned by an x-axis and by a y-axis of a three-dimensional Cartesian coordinate system, wherein the method comprises the following steps: Generating a first magnetic field measurement signal MS1 by means of a first Hall sensor 3, which has a first vertical Hall element 4, which is designed on the semiconductor chip 2 such that, if it is mechanically stress-free, the first magnetic field measurement signal MS1 depends on a component MFKX of the magnetic field acting parallel to the x-axis and is independent of a component MFKY of the magnetic field acting parallel to the y-axis; Generating a second magnetic field measurement signal MS2 by means of a second Hall sensor 5, which has a second vertical Hall element 6, which is designed on the semiconductor chip 2 such that, provided it is mechanically stress-free, the second magnetic field measurement signal MS2 depends on the component MFKY of the magnetic field acting parallel to the y-axis and is independent of the component MFKX of the magnetic field acting parallel to the x-axis; Measuring mechanical stresses in the semiconductor chip 2 using a first stress sensor 7, wherein the first stress sensor 7 is configured to generate a first shear stress measurement signal SMS1, which corresponds to a first shear stress SSP1 acting on the first vertical Hall element 4, which acts in a plane perpendicular to the x-axis and parallel to the y-axis; and Determining one or more properties EDM of the magnetic field, using an evaluation device 8, as a function of the first magnetic field measurement signal MS1, as a function of the second magnetic field measurement signal MS2 and as a function of the first shear stress measurement signal SMS1.

[0082] At the Fig. It is assumed that the first shear stress SSP1 acts on the vertical Hall elements 4 and 6 in the same way. In this case, only the first stress sensor 7 is required.

[0083] Fig. Figure 2 shows a second embodiment of an integrated Hall sensor device 1 in a schematic top view.

[0084] In exemplary embodiments, one or more properties EDM of the magnetic field include a value BEX of the component MFKX of the magnetic field acting in the x-direction.

[0085] In exemplary embodiments, the evaluation device 8 for determining the value BEX of the component MFKX of the magnetic field acting in the x-direction is designed on the basis of a first linear combination of the first magnetic field measurement signal MS1 and the second magnetic field measurement signal MS2, wherein the evaluation device 8 is designed to determine a first coefficient of the first linear combination and / or a second coefficient of the first linear combination as a function of the first shear stress measurement signal SMS1.

[0086] In exemplary embodiments, one or more properties EDM of the magnetic field alternatively or additionally include a value BEY of the component MFKY of the magnetic field acting in the y-direction.

[0087] In exemplary embodiments, the evaluation device 8 for determining the value BEY of the component MFKY of the magnetic field acting in the y-direction is designed on the basis of a second linear combination of the first magnetic field measurement signal MS1 and the second magnetic field measurement signal MS2, wherein the evaluation device 8 is designed to determine a first coefficient of the second linear combination and / or a second coefficient of the second linear combination as a function of the first shear stress measurement signal SMS1.

[0088] Fig. Figure 3 shows a third embodiment of an integrated Hall sensor device 1 in a schematic top view.

[0089] In exemplary embodiments, one or more properties EDM of the magnetic field alternatively or additionally include an angular position WIL of the magnetic field in the xy-plane.

[0090] Fig. Figure 4 shows a fourth embodiment of an integrated Hall sensor device 1 in a schematic top view.

[0091] In exemplary embodiments, the integrated Hall sensor device 1 comprises a second voltage sensor 9 for generating a second shear stress measurement signal SMS2, which corresponds to a second shear stress SSP2 acting on the second vertical Hall element 6, which acts in a plane perpendicular to the x-axis and parallel to the y-axis, wherein the evaluation device 8 is designed to determine one or more properties of the magnetic field EDM as a function of the first magnetic field measurement signal MS1, as a function of the second magnetic field measurement signal MS2, as a function of the first shear stress measurement signal SMS1 and as a function of the second shear stress measurement signal SMS2.

[0092] In exemplary embodiments, the evaluation device 8 for determining the value BEX of the component MFKX of the magnetic field acting in the x-direction is designed on the basis of a first linear combination of the first magnetic field measurement signal MS1 and the second magnetic field measurement signal MS2, wherein the evaluation device 8 is designed to determine a first coefficient of the first linear combination and / or a second coefficient of the first linear combination as a function of the first shear stress measurement signal SMS1 and the second shear stress measurement signal SMS2.

[0093] In exemplary embodiments, the evaluation device 8 for determining the value BEY of the component MFKY of the magnetic field acting in the y-direction is designed on the basis of a second linear combination of the first magnetic field measurement signal MS1 and the second magnetic field measurement signal MS2, wherein the evaluation device 8 is designed to determine a first coefficient of the second linear combination and / or a second coefficient of the second linear combination as a function of the first shear stress measurement signal SMS1 and the second shear stress measurement signal SMS2.

[0094] At the Fig. 4 It is assumed that the first shear stress SSP1 acting on the first vertical Hall element 4 and the second shear stress SSP2 acting on the second vertical Hall element 6 are significantly different, so that they are measured separately by means of the stress sensor 7 and 9.

[0095] Fig. Figure 5 shows a fifth embodiment of an integrated Hall sensor device 1 in a schematic top view.

[0096] In exemplary embodiments, the integrated Hall sensor device 1 has a first normal voltage sensor 10 for generating a first normal voltage measurement signal NSM1, which corresponds to a first normal voltage NS1 in the semiconductor chip 2, which acts in the x-direction, and wherein the integrated Hall sensor device 1 is configured as a second normal voltage sensor 11 for generating a second normal voltage measurement signal NSM2, which corresponds to a second normal voltage NS2 in the semiconductor chip 2, which acts in the y-direction. wherein the evaluation device 8 is designed to determine the first coefficient of the first linear combination and / or the second coefficient of the first linear combination as a function of the first normal voltage measurement signal NSM1 and the second normal voltage measurement signal NSM2.

[0097] In exemplary embodiments, the integrated Hall sensor device 1 has a first normal voltage sensor 10 for generating a first normal voltage measurement signal NSM1, which corresponds to a first normal voltage NS1 in the semiconductor chip 2, which acts in the x-direction, and wherein the integrated Hall sensor device 1 is configured as a second normal voltage sensor 11 for generating a second normal voltage measurement signal NSM2, which corresponds to a second normal voltage NS2 in the semiconductor chip 2, which acts in the y-direction. wherein the evaluation device 8 is designed to determine the first coefficient of the second linear combination and / or the second coefficient of the second linear combination as a function of the first normal voltage measurement signal NSM1 and of the second normal voltage measurement signal NSM2.

[0098] In exemplary embodiments, a temperature sensor 12 is provided on the semiconductor chip 2 for generating a temperature measurement signal TMS, wherein the temperature measurement signal TMS corresponds to a temperature of the semiconductor chip 2. wherein the evaluation device 8 is designed to determine the first coefficient of the first linear combination and / or the second coefficient of the first linear combination as a function of the temperature measurement signal TMS.

[0099] In exemplary embodiments, a temperature sensor 12 is provided on the semiconductor chip 2 for generating a temperature measurement signal TMS, wherein the temperature measurement signal TMS corresponds to a temperature of the semiconductor chip 2. wherein the evaluation device 8 is designed to determine the first coefficient of the second linear combination and / or the second coefficient of the second linear combination as a function of the temperature measurement signal TMS.

[0100] Fig. Figure 6 shows a sixth embodiment of an integrated Hall sensor device 1 in a schematic top view. The integrated Hall sensor device 1 of the Fig. Component 6 additionally includes a power supply 13. Furthermore, a modulator 14 is provided, which modulates a supply voltage or a supply current VS of the power supply 13. The first Hall element 4 is supplied by the modulator 14 with a first modulated supply voltage MV1. The second Hall element 6 is supplied analogously by the modulator 14 with a second modulated supply voltage MV2. A first demodulator 15 is connected downstream of the first Hall element 4, which provides the first magnetic field measurement signal MS1. Furthermore, a second demodulator 16 is connected downstream of the second Hall element 6, which provides the second magnetic field measurement signal MS21.

[0101] Modulation and demodulation of the supply voltage VS serve to balance the Hall elements 4 and 6. For example, the modulated supply voltages MV1 and MV2 can be periodically reversed. Similarly, the inputs and outputs of Hall elements 4 and 6 can be periodically swapped. This allows the implementation of the known spinning current Hall probe method, which eliminates the zero-point error of the Hall elements in the signal.

[0102] The demodulators 15 and 16 may include downstream preamplifiers and / or analog-to-digital converters.

[0103] The magnetic field measurement signals MS1 and MS2 can therefore be analog or digital signals. Furthermore, they can be voltage signals or current signals.

[0104] Furthermore, the integrated Hall sensor device 1 includes an angle detection stage 17, which, for example using an arctangent function, determines the angular position WIL of the magnetic field in the xy-plane from the value of the component of the magnetic field acting in the x-direction BEX and the value of the component of the magnetic field acting in the y-direction BEY. The angle detection stage 17 can use the CORDIC algorithm (Coordinate Rotation Digital Computer) for this purpose.

[0105] In other embodiments, the angle detection stage 17 can be integrated into the evaluation unit 8. In this case, it is possible to first determine an uncorrected angular position of the magnetic field in the xy-plane based on the uncorrected magnetic field measurement signals MS1 and MS2, disregarding the mechanical shear stresses and the normal stresses. Then, a correction angle can be determined based on the shear stresses and / or the normal stresses, with which the uncorrected angular position can be corrected to determine the angular position WIL of the magnetic field in the xy-plane.

[0106] The voltage sensors 7 and 9, as well as the standard voltage sensors 10 and 11, can be operated continuously or intermittently. In the latter case, energy can be saved. Since mechanical stresses do not typically change in the microsecond or millisecond range, it may be sufficient to generate only one measurement per sensor per second. Alternatively, environmental conditions, such as temperature, can also be taken into account when selecting the operating mode. For example, the number of measurements per unit of time can be increased in the case of significant temperature changes.

[0107] Fig. Figure 7 shows an example of a first vertical Hall element 4 in a first operating state in a schematic three-dimensional representation. The first vertical Hall element 4 comprises a Hall effect region 18, which is arranged above an embedded layer 19. The Hall effect region 18 and the embedded layer 19 are arranged in an isolation trench 20.

[0108] The first vertical Hall element 4 has 5 contacts C1 to C5 and 4 terminals T1 to T4. Contacts C1 and C5 are connected to terminal T1. Furthermore, contact C2 is connected to terminal T2, contact C3 to terminal T3, and contact C4 to terminal T4.

[0109] In the operating state of the Fig. 7. Terminals T1 and T3 serve as inputs for an excitation current, so that the excitation current lines EST run between contacts C1 and C3 and between contacts C5 and C3. The polarity of the excitation current can be changed periodically. An external magnetic field deflects the charge carriers of the excitation current, so that an electrical signal dependent on the magnetic field is generated at terminals T2 and T4, which serve as outputs.

[0110] Fig. Figure 8 shows the example of a first vertical Hall element 4 in a second operating state in a schematic three-dimensional representation.

[0111] In the operating state of the Fig. Terminals T2 and T4 serve as inputs for the excitation current, so that the excitation current lines EST run between contacts C2 and C4. The polarity of the excitation current can be periodically reversed. An external magnetic field deflects the charge carriers of the excitation current, resulting in an electrical signal at terminals T1 and T3 that is dependent on the magnetic field.

[0112] The control of the operating states as well as the polarity of the excitation current can be controlled by the modulator 14.

[0113] The second vertical Hall element 6 can be set up and operated in the same way.

[0114] Fig. Figure 9 shows exemplary excitation streamlines EST in a first vertical Hall element 4 subjected to shear stress in a schematic top view. Without shear stress, the excitation streamlines EST would be mirror-symmetrical about an axis of symmetry of the first vertical Hall element 4 running parallel to the y-axis. In this case, the first vertical Hall element 4 would respond exclusively to the x-component MFKX of an external magnetic field.

[0115] However, due to the acting shear stress, in the Fig. 9 The excitation streamlines EST are rotated slightly clockwise. This causes the first vertical Hall element 4 to respond, at least to a small extent, to the y-component MFKY of the external magnetic field, resulting in measurement inaccuracies. The disclosed integrated Hall sensor device 1 compensates for such measurement inaccuracies, so that they can either be avoided or at least reduced.

[0116] Fig. Figure 10 shows exemplary excitation streamlines in a second vertical Hall element subjected to shear stress in a schematic top view. Without shear stress, the excitation streamlines EST would be mirror-symmetric about an axis of symmetry of the second vertical Hall element 6 running parallel to the x-axis. In this case, the second vertical Hall element 6 would respond exclusively to the y-component MFKY of an external magnetic field.

[0117] However, due to the acting shear stress, in the Fig. 10 The excitation streamlines EST are rotated slightly counterclockwise. This causes the first second Hall element 6 to respond, at least to a small extent, to the x-component MFKX of the external magnetic field, resulting in measurement inaccuracies. The disclosed integrated Hall sensor device 1 compensates for such measurement inaccuracies, so that they can either be avoided or at least reduced.

[0118] Such a slight twisting or bending of the current flow lines due to the mechanical shear stress resulting from the piezoresistive effect occurs in all the aforementioned embodiments of vertical Hall elements. It is therefore not specific to the design of the vertical Hall elements in the Fig. Limited to 7 to 10 (e.g., to exactly 5 contacts).

[0119] The Fig. 9 and Fig. 10 are derived from finite element simulations, which can also be used to calculate the functions mentioned above. 1-40can be calculated.

[0120] Fig. Figure 11 shows the use of an integrated Hall sensor device 1 in a magnetic angle measuring device 21.

[0121] The angle measuring device 21 comprises an integrated Hall sensor device 1 of the type described above and a magnet 24 rotatable about a z-axis of the coordinate system for generating the magnetic field, wherein the integrated Hall sensor device 1 is designed and arranged for detecting an angular position of the magnet 24 on the basis of the angular position WIL of the magnetic field generated by the magnet 24.

[0122] The Hall sensor device 1 is, for example, arranged on a circuit board 22. The magnet 24 is attached at one end to a rotatable shaft 23. The magnet 24 is designed and arranged such that a magnetic field is generated in the area of ​​the integrated Hall sensor device 1, which rotates around the z-axis with the shaft 23 in a plane oriented parallel to the xy-plane.

[0123] Although specific embodiments of the invention are illustrated and described herein, it is apparent to those skilled in the art that the illustrated and described specific embodiments can be replaced by a multitude of alternative and / or equivalent embodiments without departing from the subject matter of the present invention. This patent application intends to cover all adaptations or variations of the described specific embodiments. Therefore, it is intended that the invention is limited exclusively to the subject matter of the appended claims and their equivalents. Reference directory: [1] Ausserlechner U., “Hall Effect Devices with Three Terminals: Their Magnetic Sensitivity and Offset Cancellation Scheme,” Journal of Sensors, vol. 2016, Article ID 5625607, 16 pages, 2016. https: / / doi.org / 10.1155 / 2016 / 5625607. [2] Motz M., Ausserlechner U., „Electrical Compensation of Mechanical Stress Drift in Precision Analog Circuits“. In: Baschirotto A., Harpe P., Makinwa K. (eds) Wideband Continuous-time ΣΔ ADCs, Automotive Electronics, and Power Management. Springer, Cham, 2017. [3] Ausserlechner U., „An Analytical Theory of Piezoresistive Effects in Hall Plates with Large Contacts“, Advances in Condensed Matter Physics, vol. 2018, Article ID 7812743, 24 pages, 2018. https: / doi.org / 10.1155 / 2018 / 78 12743. [4] Ausserlechner, U., „An Analytical Theory of the Signal-to-Noise Ratio of Hall Plates with Four Contacts and a Single Mirror Symmetry“, Journal of Applied Mathematics and Physics, vol. 6, no. 10, pages 2032-2066, 2018. [5] DE 20 2014 004 425 U1 [6] US 2018 / 0 017 636 A1 [7] Schurig E: „Highly Sensitive Vertical Hall Sensors in CMOS Technology“, Series in Microsystems, vol. 17, pages 51-52, 54, 78, 2005. [8] Poletkin K. (Editor) et al.: „Magnetic Sensors and Devices: Technologies and Applications“, Series: Devices,Circuits, and Systems, CRC Press, S. 201-203, 2018.

Claims

[1] Integrated Hall sensor device for measuring a magnetic field with a semiconductor chip (2) which is aligned parallel to an xy-plane spanned by an x-axis and a y-axis of a three-dimensional Cartesian coordinate system; a first Hall sensor (3) for generating a first magnetic field measurement signal (MS1), which has a first vertical Hall element (4) which is designed on the semiconductor chip (2) such that, if it is mechanically stress-free, the first magnetic field measurement signal (MS1) depends on a component (MFKX) of the magnetic field acting parallel to the x-axis and is independent of a component (MFKY) of the magnetic field acting parallel to the y-axis; a second Hall sensor (5) for generating a second magnetic field measurement signal (MS2), which has a second vertical Hall element (6) which is designed on the semiconductor chip (2) such that, provided it is mechanically stress-free, the second magnetic field measurement signal (MS2) depends on the component (MFKY) of the magnetic field acting parallel to the y-axis and is independent of the component (MFKX) of the magnetic field acting parallel to the x-axis; a first voltage sensor (7) for measuring mechanical stresses in the semiconductor chip (2), wherein the first voltage sensor (7) is configured to generate a first shear stress measurement signal (SMS1) which corresponds to a first shear stress (SSP1) acting on the first vertical Hall element (4), which acts in a plane perpendicular to the x-axis and parallel to the y-axis; and an evaluation device (8) for determining one or more properties (EDM) of the magnetic field as a function of the first magnetic field measurement signal (MS1), as a function of the second magnetic field measurement signal (MS2) and as a function of the first shear stress measurement signal (SMS1). [2] Integrated Hall sensor device according to claim 1, wherein the one or more properties (EDM) of the magnetic field comprise a value (BEX) of the x-direction component (MFKX) of the magnetic field. [3] Integrated Hall sensor device according to claim 1 or 2, wherein the one or more properties (EDM) of the magnetic field comprise a value (BEY) of the component (MFKY) acting in the y-direction of the magnetic field. [4] Integrated Hall sensor device according to one of claims 1 to 3, wherein one or more properties (EDM) of the magnetic field comprise an angular position (WIL) of the magnetic field in the xy-plane. [5] Integrated Hall sensor device according to one of claims 1 to 4, wherein the integrated Hall sensor device (1) comprises a second voltage sensor (9) for generating a second shear stress measurement signal (SMS2) which corresponds to a second shear stress (SSP2) acting on the second vertical Hall element (6) which acts in a plane perpendicular to the x-axis and parallel to the y-axis, wherein the evaluation device (8) is configured to determine one or more properties of the magnetic field (EDM) as a function of the first magnetic field measurement signal (MS1), as a function of the second magnetic field measurement signal (MS2), as a function of the first shear stress measurement signal (SMS1) and as a function of the second shear stress measurement signal (SMS2). [6] Integrated Hall sensor device according to one of claims 2 to 5, wherein the evaluation device (8) for determining the value (BEX) of the x-direction acting component (MFKX) of the magnetic field is configured on the basis of a first linear combination of the first magnetic field measurement signal (MS1) and the second magnetic field measurement signal (MS2), wherein the evaluation device (8) is configured for determining a first coefficient of the first linear combination and / or a second coefficient of the first linear combination as a function of the first shear stress measurement signal (SMS1). [7] Integrated Hall sensor device according to claim 5, wherein the evaluation device (8) for determining the value (BEX) of the x-direction acting component (MFKX) of the magnetic field is configured on the basis of a first linear combination of the first magnetic field measurement signal (MS1) and the second magnetic field measurement signal (MS2), wherein the evaluation device (8) is configured for determining a first coefficient of the first linear combination and / or a second coefficient of the first linear combination as a function of the first shear stress measurement signal (SMS1) and the second shear stress measurement signal (SMS2). [8] Integrated Hall sensor device according to one of claims 3 to 7, wherein the evaluation device (8) is configured for determining the value (BEY) of the component (MFKY) acting in the y-direction of the magnetic field on the basis of a second linear combination of the first magnetic field measurement signal (MS1) and the second magnetic field measurement signal (MS2), wherein the evaluation device (8) is configured for determining a first coefficient of the second linear combination and / or a second coefficient of the second linear combination as a function of the first shear stress measurement signal (SMS1). [9] Integrated Hall sensor device according to one of claims 5 to 7, wherein the evaluation device (8) for determining the value (BEY) of the component (MFKY) acting in the y-direction of the magnetic field is configured on the basis of a second linear combination of the first magnetic field measurement signal (MS1) and the second magnetic field measurement signal (MS2), wherein the evaluation device (8) is configured for determining a first coefficient of the second linear combination and / or a second coefficient of the second linear combination as a function of the first shear stress measurement signal (SMS1) and the second shear stress measurement signal (SMS2). [10] Integrated Hall sensor device according to claim 6 or 7, wherein the integrated Hall sensor device (1) comprises a first normal voltage sensor (10) for generating a first normal voltage measurement signal (NSM1) which corresponds to a first normal voltage (NS1) in the semiconductor chip (2) which acts in the x-direction, and wherein the integrated Hall sensor device (1) is configured as a second normal voltage sensor (11) for generating a second normal voltage measurement signal (NSM2) which corresponds to a second normal voltage (NS2) in the semiconductor chip (2) which acts in the y-direction, wherein the evaluation device (8) is configured for determining the first coefficient of the first linear combination and / or the second coefficient of the first linear combination as a function of the first normal voltage measurement signal (NSM1) and of the second normal voltage measurement signal (NSM2). [11] Integrated Hall sensor device according to one of claims 8 or 9, wherein the integrated Hall sensor device (1) comprises a first normal voltage sensor (10) for generating a first normal voltage measurement signal (NSM1) which corresponds to a first normal voltage (NS1) in the semiconductor chip (2) which acts in the x-direction, and wherein the integrated Hall sensor device (1) is configured as a second normal voltage sensor (11) for generating a second normal voltage measurement signal (NSM2) which corresponds to a second normal voltage (NS2) in the semiconductor chip (2) which acts in the y-direction, wherein the evaluation device (8) is configured for determining the first coefficient of the second linear combination and / or the second coefficient of the second linear combination as a function of the first normal voltage measurement signal (NSM1) and of the second normal voltage measurement signal (NSM2). [12] Integrated Hall sensor device according to claim 6 or 7, wherein a temperature sensor (12) for generating a temperature measurement signal (TMS) is formed on the semiconductor chip (2), wherein the temperature measurement signal (TMS) corresponds to a temperature of the semiconductor chip (2), wherein the evaluation device (8) is designed to determine the first coefficient of the first linear combination and / or the second coefficient of the first linear combination as a function of the temperature measurement signal (TMS). [13] Integrated Hall sensor device according to one of claims 8 or 9, wherein a temperature sensor (12) for generating a temperature measurement signal (TMS) is formed on the semiconductor chip (2), wherein the temperature measurement signal (TMS) corresponds to a temperature of the semiconductor chip (2), wherein the evaluation device (8) is designed to determine the first coefficient of the second linear combination and / or the second coefficient of the second linear combination as a function of the temperature measurement signal (TMS). [14] Angle measuring device with an integrated Hall sensor device (1) according to one of claims 4 to 13 and with a magnet (24) rotatable about a z-axis of the coordinate system for generating the magnetic field, wherein the integrated Hall sensor device (1) is designed and arranged for detecting an angular position of the magnet (24) on the basis of the angular position (WIL) of the magnetic field generated by the magnet (24). [15] Method for measuring a magnetic field using an integrated Hall sensor device (1) comprising a semiconductor chip (2) which is aligned parallel to an xy-plane spanned by an x-axis and a y-axis of a three-dimensional Cartesian coordinate system, the method comprising the following steps: Generating a first magnetic field measurement signal (MS1) by means of a first Hall sensor (3) which has a first vertical Hall element (4) which is designed on the semiconductor chip (2) such that, if it is mechanically stress-free, the first magnetic field measurement signal (MS1) depends on a component (MFKX) of the magnetic field acting parallel to the x-axis and is independent of a component (MFKY) of the magnetic field acting parallel to the y-axis; Generating a second magnetic field measurement signal (MS2) by means of a second Hall sensor (5) which has a second vertical Hall element (6) which is designed on the half-liter chip (2) such that, provided it is mechanically stress-free, the second magnetic field measurement signal (MS2) depends on the component (MFKY) of the magnetic field acting parallel to the y-axis and is independent of the component (MFKX) of the magnetic field acting parallel to the x-axis; Measuring mechanical stresses in the semiconductor chip (2) by means of a first stress sensor (7), wherein the first stress sensor (7) is configured to generate a first shear stress measurement signal (SMS1) which corresponds to a first shear stress (SSP1) acting on the first vertical Hall element (4), which acts in a plane perpendicular to the x-axis and parallel to the y-axis; and Determining one or more properties (EDM) of the magnetic field, using an evaluation device (8), as a function of the first magnetic field measurement signal (MS1), as a function of the second magnetic field measurement signal (MS2) and as a function of the first shear stress measurement signal (SMS1).

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