OPTOELECTRONIC COMPONENT AND METHOD FOR MANUFACTURING AN OPTOELECTRONIC COMPONENT

Abstract

Optoelectronic component (1) comprising an optoelectronic semiconductor chip (2), an optical element (3) and a chip carrier (5), wherein - the semiconductor chip (2) is arranged on the chip carrier (5), - the optical element (3) is arranged downstream of the semiconductor chip (2) in a radiation direction (7) of the semiconductor chip (2) and is attached to an optical carrier (12) by means of an adhesive layer (6), - a potting compound (4) forms a frame extending from the optical element (3) onto the optical carrier (12) around the optical element (3), the optical carrier (12) and the adhesive layer (6), - the potting compound (4) fixes the optical element (3) in its position relative to the semiconductor chip (2), - the optical carrier (12) and the chip carrier (5) are formed in one piece, and - the optical carrier (12) surrounds the semiconductor chip (2) at least partially from the side in the direction of emission (7).

Description

[0001] An optoelectronic component is described. Furthermore, a method for manufacturing an optoelectronic component is described.

[0002] Optoelectronic components comprising an optoelectronic semiconductor chip and an optical element are known from US 2010 / 0264438A1, US 9947844B1 and US 2018 / 0315907A1.

[0003] One of the tasks to be solved is to specify an optoelectronic component characterized by long durability and high mechanical robustness. Another task is to specify a method for manufacturing such a component.

[0004] These tasks are solved by an object having the features of independent claim 1 or by a method having the features of independent claim 6. Advantageous embodiments and further developments are the subject of the respective dependent claims.

[0005] The optoelectronic device comprises an optoelectronic semiconductor chip, an optical element, and a chip carrier. The semiconductor chip includes, for example, a sequence of semiconductor layers with an active zone. For example, the semiconductor layer sequence comprises a p-type semiconductor layer and an n-type semiconductor layer, with the active zone located between the p-type and n-type layers. The active layer serves to generate or absorb electromagnetic radiation. The active zone includes, in particular, at least one quantum well structure in the form of a single quantum well (SQW) or a multi-quantum well (MQW). Additionally, the active zone includes one, preferably several, secondary well structures. Examples of MQW structures are described in publication WO 01 / 39 282 A2, the disclosure of which is hereby incorporated by reference.

[0006] For example, during normal operation, electromagnetic radiation in the blue, green, or red spectral range, or in the UV or IR range, is generated in the active zone. In particular, it is possible that electromagnetic radiation in a wavelength range including the IR range and including the UV range is generated in the active zone.

[0007] For example, the semiconductor layer sequence is based on a III-V compound semiconductor material. For example, the semiconductor layer sequence is based on a nitride compound semiconductor material, such as Al. n In 1-n-m Ga m N, or on a phosphide compound semiconductor material, such as Al n In 1-n-m Ga m P, or on an arsenide compound semiconductor material, such as Al n In 1-n-m Ga mAs, where 0 ≤ n ≤ 1, 0 ≤ m ≤ 1, and m + n ≤ 1. The semiconductor layer sequence may contain dopants and additional components. For simplicity, however, only the essential components of the crystal lattice of the semiconductor layer sequence, namely Al, As, Ga, In, N, or P, are specified, even though these may be partially replaced and / or supplemented by small amounts of other substances.

[0008] In this and the following, a semiconductor chip is understood to be a separately handleable and electrically contactable element. A semiconductor chip is created, in particular, by singulating it from a wafer array. The semiconductor layer sequence of the semiconductor chip is, for example, continuous.

[0009] Alternatively, the semiconductor chip may comprise a multiple interconnected sequence of semiconductor layers. Separate sections of the semiconductor layer sequence are, for example, arranged on a common substrate. Each section of the semiconductor layer sequence preferably forms an emitter and is configured to emit electromagnetic radiation. The semiconductor chip thus comprises, for example, a multitude of emitters. The emitters are arranged, for example, in a so-called array.

[0010] The semiconductor chip is mounted on the chip carrier. The chip carrier has, for example, one or more metallizations on a surface facing the semiconductor chip. Alternatively or additionally, the chip carrier has one or more vias. In normal operation, the semiconductor chip is powered and controlled primarily via the chip carrier. The chip carrier is made, for example, of a fired ceramic, such as AlO or AlN.

[0011] Alternatively, the chip carrier can be formed, for example, with a conductor frame encapsulated in a plastic potting compound. The conductor frame may contain copper, for instance. Such chip carriers are referred to as QFN substrates.

[0012] The optical element is positioned downstream of the semiconductor chip in one of the semiconductor chip's emission directions. The emission direction of the semiconductor chip is, in particular, the direction in which the electromagnetic radiation emitted by the semiconductor chip exhibits its greatest intensity during normal operation.

[0013] The optical element is configured, for example, for beam shaping. For instance, the optical element is configured to focus radiation emitted by the semiconductor chip during normal operation. Alternatively, the optical element is configured, for example, for beam expansion. Furthermore, it is possible that the optical element is configured for complex beam shaping, such as generating a dot pattern.

[0014] The optical element comprises, for example, a multitude of lenses arranged in an array. These lenses could be, for example, microlenses. In this case, the optical element is specifically a so-called microlens array. If the semiconductor chip has a multitude of emitters, the optical element is preferably a microlens array.

[0015] Alternatively, the optical element is formed with a single lens.

[0016] The optical element is formed, for example, with a glass, a polymer, or a composite of at least one polymer and at least one glass.

[0017] The optical element is attached to an optical substrate by means of an adhesive layer. This adhesive layer may consist of, for example, an epoxy-based or a silicone-based adhesive. Alternatively or additionally, the adhesive layer may be based on at least one other suitable polymer. For example, the adhesive layer may consist of an acrylate.

[0018] Viewed in the direction of radiation, a potting compound forms a frame around the optical element, extending at least partially across the adhesive layer onto the optical substrate. This frame encloses the optical element, the optical substrate, and the adhesive layer, at least partially. In particular, the frame completely encloses the optical element, the optical substrate, and the adhesive layer in the direction of radiation. The potting compound is, for example, in direct contact with the optical element, the optical substrate, and the adhesive layer. Specifically, the potting compound is in direct contact with the chip carrier. The potting compound is based, for example, on an epoxy or a silicone. For example, the potting compound comprises a base material in which a filler is embedded. The filler is, for example, SiO2.

[0019] The potting compound fixes the optical element in its position relative to the semiconductor chip. For example, the potting compound is bonded to the optical element, the optical substrate, the adhesive layer, and the chip carrier. In particular, the optical element is bonded to the chip carrier in such a way that its position can only be changed by destroying the bond, i.e., the potting compound. Since the semiconductor chip is itself mounted on the chip carrier, the potting compound fixes the optical element relative to the semiconductor chip.

[0020] The optoelectronic component comprises an optoelectronic semiconductor chip, an optical element, and a chip carrier. The semiconductor chip is mounted on the chip carrier. The optical element is positioned downstream of the semiconductor chip in one of its emission directions and is attached to the optical carrier by means of an adhesive layer. A potting compound forms a frame around the optical element, the optical carrier, and the adhesive layer, extending from the optical element onto the optical carrier. The potting compound secures the optical element in its position relative to the semiconductor chip.

[0021] The optoelectronic component described here is based on, among other things, the following technical characteristics. Existing optoelectronic components that require beam shaping usually use an optical substrate with an adhesively bonded optical element. However, this adhesive bond conventionally exhibits low reliability. Due to mismatched coefficients of thermal expansion between the optical substrate and the optical element, cracks can develop in the adhesive bond as a result of thermal aging effects. These aging processes reduce the adhesion between the components. In extreme cases, the optical element and / or the optical substrate can detach, resulting in the loss of the component's function. Therefore, the optical elements and / or the optical substrate are conventionally secured with a separate, secondary adhesive bond.

[0022] The optoelectronic component described here utilizes, among other things, the idea of ​​at least partially encasing the optical element and / or the optical substrate with a potting compound. This potting creates a metallurgical bond between the optical element, the optical substrate, and the chip carrier. As a result, the optical element and the optical substrate are fixed to the chip carrier, and the reliability of the optoelectronic component can be increased. Advantageously, additional securing mechanisms to prevent the optical element from falling out can be omitted.

[0023] According to at least one embodiment of the optoelectronic component or one of its embodiments described above, the side surfaces of the optical element are at least partially tilted towards the direction of emission. Side surfaces of the optical element are, in particular, those surfaces of the optical element that connect a front surface of the optical element facing away from the semiconductor chip with a rear surface of the optical element facing the semiconductor chip. For example, side surfaces or portions of side surfaces form an acute angle with the rear cross-sectional area of ​​the optical element. In particular, the front surface has a smaller cross-sectional area than the rear surface in a cross-section parallel to a principal plane of extension of the optical element. For example, the width of the optical element, measured perpendicular to the direction of emission, decreases in the direction of emission.In particular, the width of the optical element decreases continuously in the direction of emission. In a cross-section through the optical element along the direction of emission, the optical element is, for example, trapezoidal.

[0024] According to at least one embodiment of the optoelectronic component, or one of its embodiments described above, the potting compound is arranged on the side surfaces of the optical element. For example, the potting compound is arranged directly on the side surfaces. In the case of side surfaces of the optical element that are tilted towards the direction of emission, the potting compound allows the optical element to be fixed particularly well, thereby further increasing the robustness of the component.

[0025] According to at least one embodiment of the optoelectronic component, or one of its embodiments described above, the front face of the optical element is free of the adhesive layer and the potting compound. This reduces any potential negative effects of the potting compound or the adhesive layer on the emission characteristics of the optoelectronic component.

[0026] The optical carrier and the chip carrier are formed as a single unit. In particular, the optical carrier is made of the same material as the chip carrier.

[0027] The optical carrier at least partially surrounds the semiconductor chip laterally in the direction of emission. In particular, the semiconductor chip is surrounded by the optical carrier in all directions perpendicular to the direction of emission. Preferably, the semiconductor chip is spaced apart from the optical carrier and / or the optical element. For example, the optical carrier together with the optical element, the adhesive layer, and the chip carrier form an enclosure that completely surrounds the semiconductor chip, in particular a closed housing for the semiconductor chip. Alternatively, it is possible that the optical carrier together with the optical element, the adhesive layer, and the chip carrier forms a housing that has one or more openings.

[0028] According to at least one embodiment of the optoelectronic component or one of its embodiments described above, the optical carrier has at least one recess on a side facing away from the semiconductor chip. In particular, the potting compound has at least one protrusion. For example, the recess of the optical carrier and the protrusion of the potting compound correspond to each other. In particular, the at least one protrusion of the potting compound engages with the at least one recess of the optical carrier. This means that the recess and the protrusion interlock according to a lock-and-key principle, and the protrusion, in particular, completely fills the recess. Preferably, the recess and the protrusion form a positive fit. Advantageously, this further increases the mechanical stability of the optoelectronic component.

[0029] According to at least one unclaimed embodiment of the optoelectronic component, the optical carrier is formed by the semiconductor chip; that is, the semiconductor chip also functions as the optical carrier. For example, the optical element is arranged on a surface of the semiconductor chip facing away from the chip carrier. In particular, only the adhesive layer is arranged between the optical element and the semiconductor chip.

[0030] According to at least one unclaimed embodiment of the optoelectronic component, the potting compound at least partially covers the flanks of the semiconductor chip. The flanks of the semiconductor chip are formed by surfaces that connect the surface of the semiconductor chip facing the chip carrier with the surface of the semiconductor chip facing the optical element. For example, flanks of the semiconductor chip are completely covered by the potting compound. For example, flanks of the semiconductor chip are directly covered by the potting compound. For example, all flanks of the semiconductor chip that are not in contact with the chip carrier or the adhesive layer are covered by the potting compound.

[0031] According to at least one embodiment of the optoelectronic component or one of its embodiments described above, the semiconductor chip is a surface-emitting diode chip or a surface-emitting laser diode chip.

[0032] If the semiconductor chip is a surface-emitting laser diode chip, it preferably has at least one vertically arranged resonator. This means, in particular, that a main orientation of the resonator is parallel to the emission direction. Such laser diode chips are also referred to as "vertical-cavity surface-emitting lasers," or VCSELs for short.

[0033] In particular, if the semiconductor chip comprises a plurality of emitters, each emitter is configured as a surface-emitting diode (SLED) or a surface-emitting laser diode (SLED) unit. Preferably, each SLED unit has a vertically oriented resonator. In other words, each emitter has a vertically oriented resonator and is configured to emit laser radiation during operation. In this case, the semiconductor chip is, for example, formed from an array of VSCELs, in other words, a VCSEL array.

[0034] In the case that the semiconductor chip is a surface-emitting diode (SLED) chip, the semiconductor chip is, for example, an SLED chip, such as a thin-film SLED chip. Examples of SLED chips, in particular thin-film SLED chips, are described in documents WO 01 / 39 282 A2, EP 0 905 797 A2, and WO 02 / 013 281 A1, the disclosure content of which is also included by reference.

[0035] Furthermore, a method for manufacturing an optoelectronic component is disclosed. The optoelectronic component described herein and its embodiments can be manufactured in particular by this method. That is to say, all features disclosed for the component are also disclosed for the method and vice versa.

[0036] In this process, a substrate with a multitude of recesses is provided. At least one optoelectronic semiconductor chip is placed in each of the recesses. For example, the semiconductor chips are arranged in the recess using silver conductive adhesives, silver sintering, or soldering. For example, side faces of the recesses, extending transversely to a principal plane of the substrate, project beyond the semiconductor chip placed in each recess.

[0037] In this method, incisions are formed in the substrate between the recesses, creating a plurality of optical carriers connected by a chip carrier. The optical carrier and the chip carrier are formed in one piece, and the optical carrier at least partially surrounds the semiconductor chip laterally in the direction of radiation. The chip carrier, in particular, extends parallel to a principal plane of extension of the substrate, and the optical carriers extend transversely, and in particular perpendicularly, to this principal plane of extension. The semiconductor chips mounted in the recesses are located, in particular, on the chip carrier. Preferably, the semiconductor chips are spaced apart from the optical carriers. The incisions are formed, for example, by sawing.

[0038] In this process, optical elements are bonded to the optical substrate in such a way that an optical element is located in each recess. For example, an optical element is positioned downstream of each semiconductor chip in the direction of emission. This creates gaps between the optical elements. These gaps are arranged, for example, above the cutouts. This means that, in the direction of emission, starting from the chip substrate, the gaps follow the cutouts.

[0039] In this process, the incisions and, in some cases, the gaps are filled with a potting compound. The potting compound is applied, for example, by jetting or dispensing. It is applied in a liquid state and subsequently cured. In particular, after curing, the potting compound forms a strong, bonded connection with the optical element, the optical substrate, and the chip carrier.

[0040] According to at least one embodiment of the method or one of its embodiments described above, the spaces are not completely filled with the potting compound after filling. It is possible that a meniscus, in particular a concave meniscus, is formed when the liquid potting material is applied.

[0041] In this process, the composite material consisting of the chip carrier, semiconductor chips, optical carriers, and optical elements is separated along parting lines by the encapsulation. These parting lines run primarily along the incisions in the substrate. For example, the separation is achieved by sawing.

[0042] According to at least one embodiment of the method or one of its embodiments described above, the optical elements are bonded using an adhesive layer. The adhesive layer is cured, for example, photochemically. The adhesive layer is applied, for example, by stamping, dispensing, or jetting.

[0043] Preferably, the adhesive layer is cured without the application of heat. In other words, the adhesive layer is cured by cold curing. Cold curing takes place, for example, at room temperature. Alternatively, the adhesive layer can be cured by irradiation with ultraviolet radiation. Photochemical curing allows for a relatively simple hermetic seal of the recess in which the semiconductor chip is located.

[0044] Alternatively, the adhesive layer can be at least partially cured thermally. Furthermore, it is possible to cure the adhesive layer using a combination of thermal and photochemical curing. Such a combined curing method is known, for example, as "snap-cure".

[0045] According to at least one embodiment of the method or one of its embodiments described above, the potting compound is thermally cured. In particular, the potting compound is cured by the application of heat.

[0046] According to at least one embodiment of the method or one of its embodiments described above, the optical elements are provided in an optical assembly. The optical assembly is, for example, a glass wafer or an assembly of microlenses. In particular, the optical elements are produced from the optical assembly by sawing with a profiled saw blade. For example, the side surfaces of the optical elements are designed such that, after the optical elements are bonded in place, the side surfaces are tilted towards the direction of emission. The profiled saw blade has, for example, a V-shaped profile.

[0047] Alternatively, the optical elements can be produced from the optical assembly in such a way that they have a straight saw edge. This means, in particular, that the side surfaces of the optical elements are perpendicular or substantially perpendicular to the front and / or back of the optical elements.

[0048] According to at least one embodiment of the method or one of its embodiments described above, the provided substrate has a plurality of cavities between the recesses. In particular, incisions are formed in the substrate in the region of the cavities, so that the resulting optical carriers each have a recess in the region of the cavities. When forming the incisions, the cavities are opened. For example, the cavities are surrounded on all sides by the substrate.

[0049] According to at least one embodiment of the method or one of its embodiments described above, the incisions are first filled in the area of ​​the exposed cavities so that the recesses of the optical carriers are each completely filled with the potting compound. For example, the exposed cavities form a channel in a direction transverse, and in particular perpendicular, to the direction of emission, which is filled by utilizing capillary effects. Advantageously, air inclusions in the potting compound can be avoided by utilizing capillary effects. In particular, after the cavities have been filled, the remaining gaps and inclusions are filled with the potting compound.

[0050] According to at least one embodiment of the method or one of its embodiments described above, providing the substrate includes providing a base layer. A first layer is applied to the base layer. The first layer has first cavities. These first cavities form the recesses of the substrate. In particular, the first cavities completely penetrate the first layer. For example, in a top view of the base layer, the base layer is exposed in the first cavities.

[0051] According to at least one embodiment of the method or its embodiment described above, a second layer is arranged between the base layer and the first layer, the second layer having second and third cavities, wherein the second cavities and the first cavities are congruent in a top view of the base layer. For example, the second and third cavities each completely penetrate the second layer. In particular, the first and second cavities together form the recesses of the substrate, and the third cavities form the voids of the substrate.

[0052] The base layer, for example, is simply continuous. The first and second layers, for example, are each multiple interconnected.

[0053] According to at least one embodiment of the method or one of its embodiments described above, the base layer, the first layer, and the second layer of the substrate each comprise at least one ceramic layer. For example, the layers are at least partially joined together by firing. For instance, the base layer, the first layer, and the second layer are joined together in a single firing process. Alternatively, the base layer can be fired separately, and the first and second layers can be fired together. In this case, the base layer is joined to the first and second layers, for example, by adhesive bonding.

[0054] Furthermore, it is possible that both the base layer and the first and / or second layer are formed from several ceramic sublayers.

[0055] According to at least one embodiment of the method or one of its embodiments described above, the base layer is formed with a conductor frame. The base layer is bonded to the first layer and the second layer. For example, the conductor frame of the base layer is encapsulated with a plastic potting compound. The first layer and / or the second layer are, for example, ceramic layers and comprise, for example, AlO and / or AlN. The first layer and / or the second layer are, in particular, fired. For example, the first and second layers are bonded together by firing. The first layer and / or the second layer are subsequently bonded to the base layer, for example, by adhesive bonding.

[0056] Furthermore, an unclaimed method for manufacturing an optoelectronic component is described, in which the optical carrier is formed by the semiconductor chip.

[0057] In the unclaimed method, the semiconductor chip is arranged on a chip carrier. The optical element is bonded to a surface of the semiconductor chip facing away from the chip carrier. Subsequently, the potting compound is applied to the carrier such that the flanks of the semiconductor chip and the side surfaces of the optical element are covered by the potting compound. A front surface of the optical element facing away from the carrier is, in particular, free of the potting compound. An adhesive layer is applied between the semiconductor chip and the optical element, for example, by means of stamping or dispensing. The potting compound is applied, for example, using a film-assisted molding (FAM) process.

[0058] Further advantages and beneficial embodiments and developments of the optoelectronic component and the method become apparent from the following exemplary embodiments, which are presented in conjunction with the schematic drawings. Identical, similar, and functionally identical elements are designated with the same reference numerals in the figures. The figures and the relative sizes of the elements depicted in the figures are not necessarily to scale. Rather, individual elements may be exaggerated for clarity and / or to improve comprehensibility.

[0059] They show: Fig. 1, Fig. 2 to Fig. 3 Exemplary embodiments and examples of the optoelectronic component in sectional view perpendicular to its main extension plane, Fig. 4, Fig. 5 to Fig. 6 different process stages of a first embodiment of a method for manufacturing an optoelectronic component using sectional views, Fig. 7 to 12 and 16 different process stages of a second embodiment of a method for manufacturing an optoelectronic component using sectional views, Fig. 13, Fig. 14 to Fig. 15 different stages of a process for producing a substrate using top views of the substrate.

[0060] The optoelectronic component 1 of the Fig. The component 1 comprises an optoelectronic semiconductor chip 2. The optoelectronic semiconductor chip 2 is arranged on a chip carrier 5. The semiconductor chip 2 is, for example, adhered to the chip carrier 5 by means of a silver conductive adhesive. The semiconductor chip 2 is, for example, configured to generate electromagnetic radiation. The semiconductor chip 2 comprises, for example, a sequence of semiconductor layers based on a III-V compound semiconductor material with an active zone. In intended operation, electromagnetic radiation is generated, particularly in the active zone, and emitted by the semiconductor chip 2 in the direction of radiation 7.

[0061] The semiconductor chip 2 is, for example, a light-emitting diode chip, or LED for short, or a laser diode chip, preferably a surface-emitting laser diode chip, or VCSEL for short.

[0062] Downstream of the semiconductor chip 2 in a radiation direction 7 is an optical element 3. The optical element 3 is, for example, a glass lens or a microlens array and is designed for beam shaping, in particular for beam expansion.

[0063] The optical element 3 is bonded to an optical carrier 12 by an adhesive layer 6. The adhesive layer 6 comprises, for example, a silicone-based adhesive. The optical carrier 12 and the chip carrier 5 are formed integrally. The chip carrier 5 and the optical carrier 12 are formed, for example, from a ceramic material such as AlO or AlN. The semiconductor chip 2 is spaced apart from the optical carrier 12 and the optical element 3.

[0064] The optoelectronic component 1 of the Fig. 1 further comprises a potting compound 4, which forms a frame extending from the optical element 3 onto the optical carrier 12, surrounding the optical element 3, the optical carrier 12, and the adhesive layer 6. The potting compound 4 also extends onto the chip carrier 5. The potting compound 4 thus secures the optical element 3 in its position relative to the semiconductor chip 2. The potting compound 4 is located directly adjacent to the optical element 3, the adhesive layer 6, the optical carrier 12, and the chip carrier 5.

[0065] To achieve a stronger fixation, the side surfaces 8 of the optical element 3 are at least partially tilted towards the direction of emission 7. In particular, the side surfaces 8 form an acute angle 10 with the rear surface 11 of the optical element 3 facing the semiconductor chip 2.

[0066] In normal operation, radiation emitted by the optoelectronic component 1 is emitted, in particular, via a front surface 9. The front surface 9 of the optical element 3 faces the rear surface 11. The front surface 9 is free of the encapsulation 4 and / or the adhesive 6. This reduces the influence of the adhesive layer 6 and / or the encapsulation 4 on the emission properties of the optoelectronic component 1.

[0067] The optoelectronic component 1 of the Fig. 2 exhibits essentially the same characteristics as component 1 of the Fig. 1, with the difference that the optical carrier 12 has a recess 13 on a side facing away from the semiconductor chip 2. The potting compound 4 has a protrusion 14 that engages in the recess 13. The protrusion 14 and the recess 13 correspond to each other. The protrusion 14 completely fills the recess 13. This further increases the mechanical stability of the optoelectronic component 1.

[0068] In the case of the optoelectronic component 1 according to the example of the Fig. The optical carrier 12 is formed by the semiconductor chip 2. The semiconductor chip 2 is arranged on a chip carrier 5. An optical element 3 is arranged on a side of the semiconductor chip 2 facing away from the chip carrier 5. An adhesive layer 6 is located between the semiconductor chip 2 and the optical element 3. The semiconductor chip 2 has, for example, the same features as the semiconductor chip 2 of the Fig. 1 and Fig. 2.

[0069] As in the exemplary embodiments of the Fig. 1 and Fig. 2 The optical element 3 is configured for beam shaping and has side surfaces 8 which, viewed in a radiation direction 7, are tilted towards the radiation direction 7. The front surface 9 of the optical element 3, which faces away from the semiconductor chip 2, is free of a potting compound 4 and the adhesive layer 6.

[0070] The potting compound 4 is formed in particular with the same materials as the potting compound 4 of the exemplary embodiments of the Fig. 1 and Fig. 2 and completely surrounds the semiconductor chip 2 in directions perpendicular to the direction of radiation. Furthermore, essentially all outer surfaces of the semiconductor chip 2 that are not covered by the chip carrier 5 or the adhesive layer 6 are covered by the potting compound 4, in particular directly covered.

[0071] The chip carrier 5 serves, in its intended operation, to supply power to and control the semiconductor chip 2. For example, the chip carrier 5 has one or more metallizations on a side facing the semiconductor chip 2, which are located in the Fig. 3 are not shown. Furthermore, it is possible that the chip carrier 5 has at least one via, which is also shown in the Fig. 3 is not shown. The semiconductor chip 2 of the Fig. 3 is powered and controlled during normal operation, for example via the chip carrier 5 and via a bond wire 15.

[0072] In particular, the chip carrier 5 of all embodiments is like the chip carrier of the Fig. 3 is set up for electrical contacting of the semiconductor chip 2.

[0073] In the procedure according to the Fig. 4, Fig. 5 to Fig. 6 A substrate 16 with a plurality of recesses 17 is provided. Optoelectronic semiconductor chips 2 are arranged in the recesses 17 (see Fig. 4) The semiconductor chips 2 are arranged in the recesses 17, for example, by means of silver conductive adhesives or silver sintering. Incisions 18 are formed between the recesses 17. The recesses 17 and incisions 18 are separated by optical carriers 12. The optical carriers 12 are mechanically connected to each other by a chip carrier 5. For example, the substrate 16 is sawn in the area of ​​the incisions 18.

[0074] Subsequently, an adhesive layer 6 is applied to the optical carriers 12, for example by means of stamps or dispensing (see Fig. 5) Optical elements 3 are applied to the adhesive layer 6 and the adhesive layer 6 is cured. Gaps 28 are formed between the optical elements 3, which are arranged in the direction of emission 7 above the cutouts 18. As in Fig. As can be seen in Figure 5, the incisions 18 and the spaces 28 are subsequently filled with a potting compound 4. For example, a liquid potting compound is introduced into the spaces 28 and incisions 18, for example by jetting or dispensing. The potting compound is then thermally cured, for example, to form the potting compound 4. The potting compound 4 consists, for example, of an epoxy or silicone filled with SiO2.

[0075] Subsequently, the chip carrier 5 is completely cut through by the potting compound 4 along separation lines 19 (see Fig. 6) The dividing lines 19 run in the incisions 18 and the spaces 28. The cutting is carried out, for example, by sawing. The cutting creates a plurality of optoelectronic components 1. The optoelectronic components 1 are, for example, each a component 1 according to the embodiment of the Fig. 1.

[0076] The method according to a second embodiment, as described in the Fig. 7, Fig. 8, Fig. 9 to Fig. As illustrated in 10, it essentially comprises the same steps and features as the procedure of Fig. 4, Fig. 5 to Fig. 6. In contrast to the procedure of Fig. 4, Fig. 5 to Fig. 6 the provided substrate 16 comprises a plurality of cavities 20 (see Fig. 7) The cavities 20 are, in particular, completely surrounded by the substrate 16. During the formation of the incisions 18, the cavities 20 are opened (see Fig. 8) After forming the incisions 18, the optical carriers 12 are each formed with a recess 13.

[0077] By filling the incisions 18 with the casting compound 4, the casting compound 4 has bulges 14 that correspond to the recesses 13 (see Fig. 9) After the chip carrier 5 has been completely cut through, a plurality of optoelectronic components 1 are created according to the embodiment shown in the Fig. 2 (see Fig. 10).

[0078] Fig. Figure 11 illustrates a process step in which a plurality of optical elements 3 are produced from an optical assembly. For example, an optical assembly is cut with a profiled saw blade so that each of the optical elements 3 has inclined side surfaces 8. In particular, the optical elements 3 of all embodiments can be produced from an optical assembly.

[0079] Fig. Figure 12 illustrates a process step in which a potting compound 4 is introduced into a recess 18, wherein optical carriers 12 have recesses 13. In a first step, a liquid potting compound is poured into the area of ​​the recesses 13 (see Figure 12). Fig. 12A). Capillary forces are utilized to reduce air inclusions in the potting compound 4. Subsequently, the remaining incision 18 and a space 28 located above the incision 18 are filled with the potting compound 4 (see Fig. 12B).

[0080] In the Fig. 13, Fig. 14 to Fig. Figure 15 illustrates how a substrate is created, which is used, for example, in the Fig. 7 is provided. First, a base layer 21, for example made of a ceramic material such as AlN or AlO, is provided (see Fig. 13). The base layer comprises, for example, several ceramic sub-layers, also called green bodies.

[0081] A second layer 24 is then applied (see Fig. 14) The second layer 24, for example, is made of a ceramic material such as AlO or AlN and comprises, for example, several ceramic sublayers. These sublayers are, in particular, congruent with respect to the second layer 24 when viewed from above.

[0082] The second layer 24 has second cavities 25 and third cavities 26. The second and third cavities 25, 26 completely penetrate the second layer 24. In a top view of the base layer 21, as shown in the Fig. 14 shown, in the first and second cavities 25, 26 the basic layer 21 can be seen.

[0083] Subsequently, a first layer 22 is applied to the second layer 24, so that the second layer 24 is arranged between the base layer 21 and the first layer 22 (see Fig. 15) The first layer 22 has first cavities 23 which, in plan view of the base layer 21, are congruent with the second cavities 25 of the second layer 24. Thus, the base layer 21 is recognizable in the first cavities 23. The first cavities 23 completely penetrate the first layer 22. The first layer 22 is formed, for example, with the same material as the second layer 24 and / or the base layer 21. The first layer 22, like the second layer 24, comprises, for example, a plurality of sublayers which are congruent in plan view of the first layer 22.

[0084] Subsequently, the base layer 21 and the first and second layers 22, 24 are joined together, for example by firing (see Fig. 15). It is possible that all three layers 21, 22, 24 are joined together in a common firing process and that these are joined together to form a single-piece substrate 16.

[0085] Alternatively, it is possible, for example, for the first layer 22 and the second layer 24 to be separately bonded together by firing and then applied to the base layer 21. In this case, the base layer 21 is fired independently of the first and second layers 22, 24. The firing of the base layer 21 takes place, for example, before the application of the second layer 24 (see Fig. 14) In this case, the first and second layers 22, 24 can be made of a material different from that of the base layer 21. For example, the first and second layers 22, 24 are made of AlO, and the base layer 21 is made of AlN. Advantageously, ceramic layers made of AlO are less expensive to produce.

[0086] By combining the base layer 21, the first layer 22, and the second layer 24, a substrate 16 is created, which can be used, for example, in the Fig. Figure 7 shows a cross-sectional view. The first cavities 23 and the second cavities 25 together form recesses 17 in the substrate 16, 17. The third cavities 26 form the voids 20.

[0087] Fig. Figure 16 illustrates in top view of the substrate. Fig. Figure 8 illustrates the process step in the sectional view. Fig.16 can be seen that the incisions 18 in the substrate 16, with which the optical carriers 12 are formed and the cavities 20 are opened, run along grid lines of a regular rectangular grid.

[0088] Unless otherwise indicated, the components shown in the figures preferably follow one another in the specified order. Layers that do not touch each other in the figures are preferably spaced apart. Where lines are drawn parallel to each other, the corresponding surfaces are preferably also aligned parallel to each other. Likewise, unless otherwise indicated, the relative positions of the drawn components to each other are realistically represented in the figures. Reference symbol list 1 optoelectronic component 2 optoelectronic semiconductor chip 3 optical element 4 potting 5 chip carriers 6 adhesive layers 7. Direction of radiation 8 Side surface of the optical element 9 Front of the optical element 10 angles 11 Back side of the optical element 12 optical carriers 13 recess 14 Bulge 15 Bond wire 16 Substrat 17. Extraction of the substrate 18 cut 19 Dividing line 20 cavities 21 Base layer 22 first shift 23 first cavity 24 second shift 25 second cavity 26 third cavity 28 Space between optical elements

Claims

Optoelectronic component (1) comprising an optoelectronic semiconductor chip (2), an optical element (3) and a chip carrier (5), wherein: - the semiconductor chip (2) is arranged on the chip carrier (5), - the optical element (3) is arranged downstream of the semiconductor chip (2) in a radiation direction (7) of the semiconductor chip (2) and is attached to an optical carrier (12) by means of an adhesive layer (6), - a potting compound (4) forms a frame extending from the optical element (3) onto the optical carrier (12) around the optical element (3), the optical carrier (12) and the adhesive layer (6), - the potting compound (4) fixes the optical element (3) in its position relative to the semiconductor chip (2), - the optical carrier (12) and the chip carrier (5) are formed in one piece, and - the optical carrier (12) at least partially surrounds the semiconductor chip (2) laterally in the radiation direction (7). Optoelectronic component (1) according to claim 1, wherein the side surfaces (8) of the optical element (3) are at least partially tilted towards the direction of emission (7) when viewed from this direction, and the potting compound (4) is arranged on the side surfaces (8) of the optical element (3). Optoelectronic component (1) according to one of the preceding claims, wherein a front side (9) of the optical element (3) is free from the adhesive layer (6) and the potting compound (4). Optoelectronic component (1) according to one of the preceding claims, wherein - the optical carrier (12) has at least one recess (13) on a side facing away from the semiconductor chip (2), - the potting compound (4) has at least one protrusion (14) which engages in the at least one recess (13) of the optical carrier (12). Optoelectronic component (1) according to one of the preceding claims, wherein the semiconductor chip (2) is a surface-emitting light-emitting diode chip or a surface-emitting laser diode chip. Method for manufacturing an optoelectronic device (1) comprising the following steps: - providing a substrate (16) with a plurality of recesses (17); - placing at least one semiconductor chip (2) in each recess (17); - forming incisions (18) in the substrate (16) between the recesses (17) such that a plurality of optical carriers (12) connected by a chip carrier (5) are formed, wherein the optical carrier (12) and the chip carrier (5) are formed in one piece, and the optical carrier (12) at least partially surrounds the semiconductor chip (2) laterally in the direction of emission (7); - adhering optical elements (3) to the optical carriers (12) such that an optical element (3) is located on each recess (17) and spaces (28) are formed between the optical elements (3) above the incisions (18); - filling the incisions (18) and partially the spaces (28) with a casting (4);- Cutting through the encapsulation (4) of the assembly comprising chip carrier (5), semiconductor chips (2), optical carrier (12) and optical elements (3) along separation lines (19) running in the incisions (18). Method according to claim 6, wherein the optical elements (3) are bonded with an adhesive layer (6) which is photochemically cured, and the potting compound (4) is thermally cured. Method according to claim 6 or 7, wherein the optical elements (3) are provided in an optical assembly, and the optical elements (3) are produced from the optical assembly by sawing with a profiled saw blade in such a way that, after the optical elements (3) are glued on, side surfaces (8) of the optical elements (3) are tilted towards the direction of emission (7). Method according to one of claims 6 to 8, wherein - the provided substrate (16) has a plurality of cavities (20) between the recesses (17), - the formation of incisions (18) in the substrate (16) in the area of ​​the cavities (20) takes place, such that the resulting optical carriers (12) each have a recess (13) in the area of ​​the cavities (20). Method according to claim 9, wherein the filling of the incisions (18) with the potting compound (4) comprises the following steps: - Filling the spaces (28) with the potting compound (4) in the area of ​​the exposed cavities (20) so that the recesses (13) of the optical carriers (12) are each completely filled with the potting compound (4), - Filling the remaining inclusions (18) with the potting compound (4). Method according to any one of claims 6 to 10, wherein the provision of the substrate (16) comprises the following steps: - providing a base layer (21); - applying a first layer (22) having first cavities (23) to the base layer (21), wherein the first cavities (23) form the recesses (17) of the substrate (16). Method according to claim 11, wherein - a second layer (24) is arranged between the base layer (21) and the first layer (22), which has second (25) and third cavities (26), wherein the second cavities (25) and the first cavities (23) are congruent in plan view of the base layer (21), - the first (23) and second cavities (25) form the recesses (17) of the substrate (16), - the third cavities (26) form voids (20) of the substrate (16). Method according to claim 11 or 12, wherein the layers (21, 22, 24) of the substrate (16) are ceramic layers and the layers (21, 22, 24) are at least partially joined by firing.

Images