MAGNETIC FIELD DETECTION DEVICE AND CURRENT METER

Abstract

A magnetic field detection device (100) comprising: a first magnetoresistive effect element (11, 14 or 21, 24, 31, 34) having a magnetoresistive film (MR1, MR2, MR3 or MR4 or MRL1, MRR1, MRL2, MRR2, MRL3, MRR3, MRL4 or MRR4) extending in the direction of a first axis (W-axis or V-axis), and a first end part (11A, 12A, 13A or 14A), a second end part (11B, 12B, 13B or 14B) and an intermediate part (11C, 12C, 13C or 14C) between the first end part (11A, 12A, 13A or 14A) and the second end part (11B, 12B, 13B or 14B); and a conductor (6 or 60) having a first part (61UA or 61UB) and a second part (62UA or 62UB), each extending in the direction of a second axis (Y-axis) that is inclined with respect to the direction of the first axis (W-axis or V-axis), wherein the conductor is configured to apply an induction magnetic field (SF and RF) to the magnetoresistive film (MR1, MR2, MR3 or MR4 or MRL1, MRR1, MRL2, MRR2, MRR3, MRR3, MRL4 or MRR4) in a direction of a third axis (X-axis) orthogonal to the direction of the second axis (Y-axis) when a current flows through the conductor, wherein the first part (61UA or 61UB) overlaps the first end part (11A, 12A, 13A or 14A) in a fourth axis direction (Z-axis) that is orthogonal to both the second axis direction (Y-axis) and the third axis direction (X-axis), and wherein the second part (62UA or 62UB) overlaps the second end part (11B, 12B, 13B or 14B) in the fourth axis direction (Z-axis), wherein the conductor (6 or 60) comprises a helical coil wound around the first magnetoresistive effect element (11 or 14) while extending along the direction of the third axis (X-axis), wherein the magnetic field detection device (100) comprises a second element with magnetoresistive effect (12 or 13), wherein the helical coil (6 or 60) comprises: a first helical coil portion (6A) wound around the first magnetoresistive effect element (11 or 14) in a first winding direction (CD1) while the element extends along the direction of the third axis (X-axis); and a second helical coil portion (6B) wound around the second magnetoresistive effect element (12 or 13) in a second winding direction (CD2) opposite to the first winding direction (CD1) while the element extends along the direction of the third axis (X-axis), the second helical coil portion (6B) being connected in series with the first helical coil portion (6A).

Description

BACKGROUNDThe disclosure relates to a magnetic field detection device and a current detection apparatus each including a magnetoresistive effect element.Magnetic field detection apparatuses using magnetoresistive effect elements have been proposed. For example, Japanese Patent Publication No. 2016-1 118 discloses a magnetic field detection apparatus including a magnetoresistive effect element and a conductor in which a center line of the conductor in the direction of current flow and a center line of the magnetoresistive effect element in the direction of length are oriented in different directions from each other.Further prior art is U.S. patent application U.S. Pat. No. 2017 / 0 115 363 A1.SUMMARYA first magnetic field detection device according to an aspect of the disclosure includes a magnetoresistive effect element and a conductor. The magnetoresistive effect element includes a magnetoresistive film extending in a first axis direction and including a first end part, a second end part, and an intermediate part between the first end part and the second end part. The conductor includes a first part and a second part each extending in a second axis direction inclined with respect to the first axis direction. The conductor is configured to be supplied with a current and thereby generate an induction magnetic field that is applied to the magnetoresistive film in a third axis direction orthogonal to the second axis direction. Here, the first part and the second part respectively overlap the first end part and the second end part in a fourth axis direction orthogonal to both the second axis direction and the third axis direction.A second magnetic field detection device according to an aspect of the disclosure includes first and second magneto-resistive effect elements and first and second conductors. The first magnetoresistive effect element includes a first magnetoresistive film extending in a first axis direction. The first conductor includes a first part and a second part that each extend in a second axis direction inclined with respect to the first axis direction and that are adjacent to each other in a third axis direction different from both the first axis direction and the second axis direction. The second conductor includes a third part and a fourth part each extending in the second axis direction and being adjacent to each other in the third axis direction. The second magnetoresistive effect element includes a second magnetoresistive film extending in the first axis direction. The first magnetoresistive film includes a first end portion, a second end portion, and a first intermediate portion between the first end portion and the second end portion. The second magnetoresistive film includes a third end part, a fourth end part, and a second intermediate part between the third end part and the fourth end part. The first part and the second part of the first conductor respectively overlap the first end part and the second end part of the first magnetoresistive film in a fourth axis direction orthogonal to both the second axis direction and the third axis direction. The first part and the second part are each configured to be supplied with a first current and thereby generate a first induction magnetic field that is applied to the first end part and the second end part in the direction of the third axis. The third part and the fourth part of the second conductor respectively overlap the third end part and the fourth end part of the second magnetoresistive film in the direction of the fourth axis. The third part and the fourth part are each configured to be supplied with a second current and thereby generate a second induction magnetic field that is applied to the third end part and the fourth end part in the direction of the third axis.A current detection device according to an aspect of the disclosure includes a magnetoresistive effect element, a first conductor, and a second conductor. The magnetoresistive effect element includes a magnetoresistive film extending in a first axis direction and including a first end part, a second end part, and an intermediate part between the first end part and the second end part. The first conductor includes a first part and a second part each extending in a second axis direction inclined with respect to the first axis direction. The first conductor is configured to be supplied with a first current and thereby generate a first induction magnetic field that is applied to the magnetoresistive film in a first direction along a third axis direction orthogonal to the second axis direction. The second conductor is configured to be supplied with a second current and thereby generate a second induction magnetic field that is applied to the magnetoresistive film in a second direction opposite to the first direction. The first part and the second part respectively overlap the first end part and the second end part in a fourth axis direction orthogonal to both the second axis direction and the third axis direction.BRIEF DESCRIPTION OF THE DRAWINGSThe accompanying drawings are for further understanding of the technology and are included in and constitute a part of this specification. The drawings illustrate exemplary embodiments and together with the specification serve to explain the principles of the technology. FIG. 1 is a schematic planar diagram showing an example of the overall configuration of a current detection apparatus according to an example of the configuration of the disclosure. FIG. 2A is a perspective diagram illustrating an overall configuration example of a first current detection unit illustrated in FIG. 1. FIG. 2B is a perspective diagram illustrating an overall configuration example of a second current detection unit illustrated in FIG. 1. FIG. 3A is a planar diagram for explaining a detailed configuration of a first magnetoresistive effect element formed in a first element formation region illustrated in FIG. 2A. FIG. 3B is a schematic cross-sectional diagram illustrating a setting operation in the first current detection unit illustrated in FIG. 2A. FIG. 3C is a schematic cross-sectional diagram illustrating a reset operation in the first current detection unit illustrated in FIG. 2A. FIG. 3D is a first schematic cross-sectional diagram illustrating a current detection operation in the first current detection unit illustrated in FIG. 2A. FIG. 3E is a second schematic cross-sectional diagram illustrating the current detection operation in the first current detection unit illustrated in FIG. 2A. FIG. 3F is an explanatory diagram illustrating intensity distributions of a set magnetic field and a reset magnetic field to be applied to a first magnetoresistive film illustrated in FIG. 3A. FIG. 3G is a planar diagram for explaining a detailed configuration of a fourth magnetoresistive effect element formed in a formation region of the fourth element illustrated in FIG. 2A. FIG. 4A is a planar diagram for explaining a detailed configuration of a third magnetoresistive effect element formed in a formation region of the third element illustrated in FIG. 2B. FIG. 4B is a schematic cross-sectional diagram illustrating the setting operation in the second current detection unit illustrated in FIG. 2B. FIG. 4C is a schematic cross-sectional diagram illustrating the reset operation in the second current detection unit illustrated in FIG. 2B. FIG. 4D is a first schematic cross-sectional diagram illustrating the current detection operation in the second current detection unit illustrated in FIG. 2B. FIG. 4E is a second schematic cross-sectional diagram illustrating the current detection operation in the second current detection unit illustrated in FIG. 2B. FIG. 4F is a planar diagram for explaining a detailed configuration of a second magnetoresistive effect element formed in a second element formation region illustrated in FIG. 2B. FIG. 5A is a first enlarged schematic perspective view of a portion of a helical coil. FIG. 5B is a second enlarged schematic perspective view of the part of the helical coil. FIG. 6A is an exploded perspective view showing a stacked structure of the first magnetoresistive film illustrated in FIG. 3A. FIG. 6B is an exploded perspective view illustrating a stacked structure of a second magnetoresistive film illustrated in FIG. 4C. FIG. 6C is an exploded perspective view illustrating a stacked structure of a third magnetoresistive film illustrated in FIG. 4B. FIG. 6D is an exploded perspective view illustrating a stacked structure of a fourth magnetoresistive film illustrated in FIG. 4A. FIG. 7 is a circuit diagram of the current detection apparatus shown in FIG. 1. FIG. 8 is a first enlarged schematic perspective view of a part of a coil according to a modification example. FIG. 9 is a second enlarged schematic perspective view of the part of the coil according to the modification example. FIG. 10A is a schematic planar diagram illustrating an overall configuration example of a magnetic field detection device according to an example configuration of the disclosure. FIG. 10B is a circuit diagram of the magnetic field detection apparatus illustrated in FIG. 10A. FIG. 11A is a planar diagram for explaining a detailed configuration of a first element formation region illustrated in FIG. 10A. FIG. 11B is a cross-sectional diagram for explaining the detailed configuration of the first element formation region illustrated in FIG. 10A. FIG. 12 is a planar diagram for explaining a detailed configuration of a second element formation region illustrated in FIG. 10A. FIG. 13 is a planar diagram for explaining a detailed configuration of a formation region of the third element illustrated in FIG. 10A. FIG. 14 is a planar diagram for explaining a detailed configuration of a formation region of the fourth element illustrated in FIG. 10A.DETAILED DESCRIPTIONMagnetic field detection devices using magnetoresistive elements are required to be miniaturized and improved in detection accuracy. It is desirable to provide a magnetic field detection apparatus and a current detection apparatus that achieve high detection accuracy with small size.Hereinafter, some example embodiments and modification examples of the technology will be described in detail with reference to the accompanying drawings. Note that the following description refers to illustrative examples of the technology and should not be taken as limiting the technology. Factors including, but not limited to, numerical values, shapes, materials, components, positions of the components, and the manner in which the components are joined together are illustrative only and are not to be construed as limiting the technology. Moreover, elements in the following example embodiments that are not recited in a most general independent claim of the disclosure are optional and may be provided as needed. The drawings are schematic and are not intended to be drawn to scale. Like elements are denoted by the same reference numerals to avoid redundant descriptions. Note that the description is given in the following order. 1. example embodiment (an example of a current detection device that detects a current flowing through a bus and includes a bridge circuit and a helical coil, the bridge circuit including four magnetoresistive effect elements, and the helical coil having a winding direction that inverts at an intermediate point along the coil) 2. examples of modifications[1. Example Configuration][Configuration of Current Detection Device 100]First, a configuration of a current detection device 100 according to an example embodiment of the disclosure will be described with reference to the figures. 1 to 7.FIG. 1 is a schematic planar diagram showing an example of an overall configuration of the current detection device 100. As illustrated in FIG. 1, the current detection device 100 may include a power line (a bus) 5 to be supplied with a signal current Im (Im 1, Im 2) to be detected, and a substrate 1 provided with current detection units 10A and 10B. The current detection unit 10A may include a magnetoresistive effect element 11 formed in an element formation region X 1, a magnetoresistive effect element 14 formed in an element formation region X 4, and a coil part 6A. The current detection unit 10B may include a magnetoresistive effect element 13 formed in an element formation region X 3, a magnetoresistive effect element 12 formed in an element formation region X 2, and a coil part 6B. The coil part 6A and the coil part 6B may be connected in series with each other to form a single helical coil 6. The helical coil 6 is configured to be supplied with a feedback current If (If 1, If 2), a set current Is, and a reset current Ir, all of which will be described in detail later. Note that the feedback current If, the adjustment current Is, and the reset current Ir may be supplied to the helical coil 6 at different timings.The magnetoresistive effect elements 11 to 14 in the present example embodiment may each correspond to a specific but non-limiting example of a "magnetoresistive effect element" according to an embodiment of the disclosure. Each of the magnetoresistive effect elements 11 and 14 may also correspond to a specific but non-limiting example of a "first magnetoresistive effect element" according to an embodiment of the disclosure, and each of the magnetoresistive effect elements 12 and 13 may also correspond to a specific but non-limiting example of a "second magnetoresistive effect element" according to an embodiment of the disclosure. Further, the helical coil 6 may correspond to a specific, but non-limiting example of a "conductor" and a "first conductor" according to an embodiment of the disclosure. The bus 5 may correspond to a specific, but non-limiting example of a "second conductor", according to an embodiment of the disclosure.[Current Detection Unit 10A]FIG. 2A is an enlarged perspective view of the current detection unit 10A illustrated in FIG. 1. As illustrated in FIG. 2A, the current detection unit 10A may have a configuration in which, for example, a lower wiring line 6LA, the substrate 1 having the magnetoresistive effect element 11 and the magnetoresistive effect element 14 arranged side by side in the Y-axis direction, and an upper wiring line 6U are stacked above the bus 5 in this order in the Z-axis direction. The upper wiring line 6U and the lower wiring line 6LA may form a part of the coil part 6A and may be connected in series with each other. FIG. 2A illustrates an example in which the lower wiring line 6LA includes eight lower wiring line patterns 61LA to 68LA, and the upper wiring line 6U includes two upper wiring line patterns 61A and 62U. However, in one aspect of the disclosure, the number of the lower wiring line patterns of the lower wiring line 6LA and the number of the upper wiring line patterns of the upper wiring line 6U are not limited to these numbers, and may be set to arbitrary numbers. The eight lower wiring line patterns 61LA to 68LA may be connected in parallel to a single power supply. The two upper wiring line patterns 61U and 62U may also be connected in parallel to the power supply. Since the upper wiring line 6U and the lower wiring line 6LA can be connected in series, for example, in a case where a setting current Is flows in the +Y direction through the upper wiring line 6U (the upper wiring line patterns 61U and 62U), a setting current Is can flow in the -Y direction through the lower wiring line 6LA (the eight lower wiring line patterns 61LA to 68LA). In a case where a reset current Ir flows through the upper wiring line 6Uin the -Y direction, a reset current Ir may flow through the lower wiring line 6LAin the +Y direction. Further, in a case where a signal current Im 1 in the +Y direction flows through the bus 5, a feedback current If 1 in the +Y direction may flow through the upper wiring line 6A and a feedback current If 1 in the -Y direction may flow through the lower wiring line 6LA. Further, in a case where a signal current Im 2 in the -Y direction flows through the bus 5, a feedback current If 2 in the -Y direction may flow through the upper wiring line 6A and a feedback current If 2 in the +Y direction may flow through the lower wiring line 6LA. Note that a reference sign If 1 in FIG. 1 indicates the direction of the feedback current flowing through the upper wiring line 6U and the lower wiring line 6LA. In FIG. 2A, an arrow denoted by JS 11 indicates the direction of magnetization JS 11 of a pinned magnetization layer S 11 (described later) of a magnetoresistive film MR 1 (described later) included in the magnetoresistive effect element 11, and an arrow denoted by JS 41 indicates the direction of magnetization JS 41 of a pinned magnetization layer S 41 (described later) of a magnetoresistive film MR 4 (described later) included in the magnetoresistive effect element 14.The upper wiring line patterns 61U and 62U and the lower wiring line patterns 61LA to 68LA may all extend in the Y-axis direction. The lower wiring line patterns 61LA to 64LA may be disposed opposite to the upper wiring line pattern 61U, and the magneto-resistive effect elements 11 and 14 are disposed between the upper wiring line pattern 61U and the lower wiring line patterns 61LA to 64LA in the Z-axis direction. The lower wiring line patterns 65LA to 68LA may be disposed opposite to the upper wiring line pattern 62U, and the magnetoresistive effect elements 11 and 14 are disposed between the upper wiring line pattern 62U and the lower wiring line patterns 65LA to 68LA in the Z-axis direction.Here, the upper wiring line pattern 61U may correspond to a specific but non-limiting example of a "first part" according to an aspect of the disclosure, and the upper wiring line pattern 62U may correspond to a specific but non-limiting example of a "second part" according to an aspect of the disclosure. Further, the lower wiring line patterns 61LA to 64LA may each correspond to a specific but non-limiting example of a "third part" according to an aspect of the disclosure, and the lower wiring line patterns 65LA to 68LA may each correspond to a specific but non-limiting example of a "fourth part" according to an aspect of the disclosure.[Current Detection Unit 10B]FIG. 2B is an enlarged perspective view of the current detection unit 10B illustrated in FIG. 1. As illustrated in FIG. 2B, the current detection unit 10B may have a structure in which, for example, a lower wiring line 6LB, the substrate 1 including the magnetoresistive effect element 13 and the magnetoresistive effect element 12 arranged side by side in the Y-axis direction, and the upper wiring line 6UB are stacked above the bus 5 in this order in the Z-axis direction. Note that the bus 5 and the substrate 1 may be common between the current detection unit 10A and the current detection unit 10B. The upper wiring line 6UB and the lower wiring line 6LB may form a part of the coil part 6B and may be connected in series with each other. FIG. 2B illustrates an example in which the lower wiring line 6LB includes eight lower wiring line patterns 61LB to 68LB, and the upper wiring line 6UB includes two upper wiring line patterns 61UB and 62UB. However, in one aspect of the disclosure, the number of the lower wiring line patterns of the lower wiring line 6LB and the number of the upper wiring line patterns of the upper wiring line 6UB are not limited to these numbers, and may be set to arbitrary numbers. The eight lower wiring line patterns 61LB to 68LB may be connected in parallel with the above-mentioned power supply. The two upper line patterns 61UB and 62UB may also be connected in parallel to the power supply.In FIG. 2B, an arrow having the sign JS 31 indicates the direction of magnetization JS 31 of a pinned magnetization layer S 31 (described later) of a magnetoresistive film MR 3 (described later) included in the magnetoresistive element 13, and an arrow having the sign JS 21 indicates the direction of magnetization JS 21 of a pinned magnetization layer S 21 (described later) of a magnetoresistive film MR 2 (described later) included in the magnetoresistive element 12.Since the coil part 6A and the coil part 6B can be coupled in series with each other, a set current Is and a reset current Ir supplied from the common power supply between the coil part 6A and the coil part 6B can flow through the coil part 6B. In the current detection unit 10B, however, the adjustment current Is and the reset current Ir may flow in the opposite direction to those in the current detection unit 10A. In a specific but non-limiting example, in a case where a setting current Is flows through the upper wiring line 6UB (the upper wiring line patterns 61UB and 62UB) in the -Y direction, a setting current Is may flow through the lower wiring line 6UB (the eight lower wiring line patterns 61UB to 68UB) in the +Y direction. In a case where a reset current Ir in the +Y direction flows through the upper wiring line 6UB (the upper wiring line patterns 61UB and 62UB), a reset current Ir in the -Y direction may flow through the lower wiring line 6UB (the eight lower wiring line patterns 61UB to 68UB). Further, in a case where a signal current Im 1 in the +Y direction flows through the bus 5, a feedback current If 1 in the +Y direction may flow through the upper wiring line 6UB and a feedback current If 1 in the -Y direction may flow through the lower wiring line 6LB. Further, in a case where a signal current Im 2 in the -Y direction flows through the bus 5, a feedback current If 2 in the -Y direction may flow through the upper wiring line 6UB and a feedback current If 2 in the +Y direction may flow through the lower wiring line 6LB. Note that reference character If 1 in FIG. 1 indicates the direction of the feedback current flowing through the upper wiring line 6UB and the lower wiring line 6LB.The upper wiring line patterns 61UB and 62UB and the lower wiring line patterns 61LB to 68LB may all extend in the Y-axis direction. The lower wiring line patterns 61LB to 64LB may be disposed opposite to the upper wiring line pattern 61UB, and the magnetoresistive effect elements 13 and 12 are disposed between the upper wiring line pattern 61UB and the lower wiring line patterns 61LB to 64LB in the Z-axis direction. The lower wiring line patterns 65LB to 68LB may be disposed opposite to the upper wiring line pattern 62UB, and the magnetoresistive effect elements 13 and 12 are disposed between the upper wiring line pattern 62UB and the lower wiring line patterns 65LB to 68LB in the Z-axis direction.Here, the upper wiring line pattern 61UB may correspond to a specific but non-limiting example of the "first part" according to an aspect of the disclosure, and the upper wiring line pattern 62UB may correspond to a specific but non-limiting example of the "second part" according to an aspect of the disclosure. Further, the lower wiring line patterns 61LB to 64LB may each correspond to a specific but non-limiting example of the "third part" according to an aspect of the disclosure, and the lower wiring line patterns 65LB to 68LB may each correspond to a specific but non-limiting example of the "fourth part" according to an aspect of the disclosure.[Magnetoresistive Effect Element 11]FIG. 3A is a planar diagram for explaining a detailed configuration of the magnetoresistive effect element 11 formed in the element formation region X 1 of the current detection unit 10A. Further, FIGS. 3B to 3E are cross-sectional diagrams each illustrating a part of the current detection unit 10A. Note that FIG. 3A shows a plurality of magnetoresistive films MR 1 that form the magnetoresistive effect element 11 and the upper wiring line patterns 61A and 62U disposed over the magnetoresistive films MR 1, and omits other components.As illustrated in FIG. 3A, the magnetoresistive effect element 11 may include a plurality of magnetoresistive films MR 1 arranged in the Y-axis direction. The plurality of magnetoresistive films MR 1 may be coupled in series with each other and may each extend in a W-axis direction inclined with respect to both an X-axis direction and the Y-axis direction. Therefore, the plurality of magnetoresistive films MR 1 may each have shape anisotropy in the W-axis direction. An angle θ 1 formed between the W-axis direction and the Y-axis direction may be, for example, 45°. Each of the plurality of magnetoresistive films MR 1 includes a first end part 11A, a second end part 11B, and an intermediate part 11C between the first end part 11A and the second end part 11B. The first end part 11A and the second end part 11B may be portions each including a first end part 11AT and a second end part 11BT of the magnetoresistive film MR 1 that are opposed to each other in the W-axis direction. Further, in FIG. 3A, an arrow denoted by JS 13 indicates a magnetization direction of a magnetization free layer S 13 (described later) in an initial state in each magnetoresistive film MR 1. In a specific but non-limiting example, the direction of magnetization JS 13 of the free magnetization layer S 13 in the initial state may be substantially parallel to the direction of the W axis. Further, an arrow denoted by reference symbol JS 11 in FIG. 3A indicates the direction of magnetization JS 11 of the magnetization pinned layer S 11 (described later) in each magnetoresistive film MR 1. In a specific but non-limiting example, the direction of magnetization JS 11 may be substantially parallel to a direction of the V-axis perpendicular to the direction of the W-axis. The magnetoresistive films MR 1 may therefore be sensitive in the V-axis direction.Here, the direction of the W axis J 1 may correspond to a specific but non-limiting example of a "first axis direction" according to an embodiment of the disclosure. Here, the direction of the Y axis may correspond to a specific but non-limiting example of a "second axis direction" according to an embodiment of the disclosure. The direction of the X axis may correspond to a specific but non-limiting example of a "third axis direction" according to an embodiment of the disclosure. The direction of the Z axis may correspond to a specific but non-limiting example of a "direction of the fourth axis" according to an embodiment of the disclosure.The upper wiring line pattern 61U and the upper wiring line pattern 62U of the coil 6 respectively overlap the first end part 11A and the second end part 11B in the Z-axis direction. The lower wiring line patterns 61LA to 64LA of the helical coil 6 may respectively overlap the first end part 11A in the Z-axis direction. Also, the lower wiring line patterns 65LA to 68LA of the helical coil 6 may respectively overlap the second end part 11B in the Z-axis direction. In a specific but non-limiting example, the upper wiring line pattern 61U may overlap the first end 11AT in the first end part 11A in the Z-axis direction, and the upper wiring line pattern 62U may overlap the second end 11EA in the second end part 11B in the Z-axis direction.Thus, in the current detection unit 10A, as illustrated in FIGS. 3A and 3B, supplying a set current Is to the helical coil 6 causes a set magnetic field SF- in -X direction to be applied to the magnetoresistive film MR 1. As illustrated in FIG. 3C, supplying a reset current Ir to the helical coil 6 causes a reset magnetic field RF+in a +X direction to be applied to the magnetoresistive film MR 1. Further, as illustrated in FIG. 3D, in a case where a signal current Im 1 in the +Y direction flows through the bus 5, a signal magnetic field Hm 1 in the +X direction may be applied to the magnetoresistive film MR 1. In this case, supplying a feedback current If 1 to the helical coil 6 may cause a feedback magnetic field Hf 1 in the -X direction to be applied to the magnetoresistive film MR 1 to cancel the signal magnetic field Hm 1. Further, as illustrated in FIG. 3E, in a case where a signal current Im 2 in the -Y direction flows through the bus 5, a signal magnetic field Hm 2 in the -X direction may be applied to the magnetoresistive film MR 1. In this case, supplying a feedback current If2to the helical coil 6 may cause a feedback magnetic field Hf2in the +X direction to be applied to the magnetoresistive film MR 1 to cancel the signal magnetic field Hm2.It should be noted that the adjustment magnetic field SF (SF+, SF-) and the reset magnetic field RF (RF+, RF-) may correspond to a specific but non-limiting example of an "induction magnetic field" or a "first induction magnetic field", according to an aspect of the disclosure.As illustrated in FIG. 3F, the intensities (absolute values) of the adjustment magnetic field SF and the reset magnetic field RF applied to the first end part 11A and the second end part 11B, respectively, may be higher than the intensities (absolute values) of the adjustment magnetic field SF and the reset magnetic field RF applied to the intermediate part 11C. One reason for this is that the first end part 11A and the second end part 11B overlap the upper wiring line pattern 61U and the upper wiring line pattern 62U, respectively, in the Z-axis direction, while no upper wiring line patterns or no lower wiring line patterns overlap the intermediate part 11C in the Z-axis direction; in other words, the intermediate part 11C is farther from the upper wiring line patterns 61U and 62U and the lower wiring line patterns 61LA to 68LA of the helical coil 6 as compared with the first end part 11A and the second end part 11B. Note that FIG. 3F is an explanatory diagram illustrating the X-axis intensity distribution of the adjustment magnetic field SF and the reset magnetic field RF to be applied to the magnetoresistive film MR 1. In FIG. 3F, the horizontal axis represents the position (arbitrary units) in the X-axis direction, and the vertical axis represents the magnetic field strength (arbitrary units).[Magnetoresistive Effect Element 14]FIG. 3G is a planar diagram for explaining a detailed configuration of the magnetoresistive effect element 14 formed in the element formation region X 4 of the current detection unit 10A. Note that FIG. 3G shows a plurality of magnetoresistive films MR 4 that form the magnetoresistive effect element 14 and the upper wiring line patterns 61A and 62U that are disposed over the magnetoresistive effect films MR 4 and omits other components.As illustrated in FIG. 3G, the magnetoresistive effect element 14 may include a plurality of magnetoresistive films MR 4 arranged in the Y-axis direction. The plurality of magnetoresistive films MR 4 may be coupled in series with each other and each extend in the W-axis direction inclined with respect to both the X-axis direction and the Y-axis direction. Therefore, the plurality of magnetoresistive films MR 4 may each have shape anisotropy in the W-axis direction. Each of the plurality of magnetoresistive films MR 4 includes a first end part 14A, a second end part 14B, and an intermediate part 14C between the first end part 14A and the second end part 14B. Note that the first end part 14A and the second end part 14B may be portions each including a first end part 14AT and a second end part 14BT of the magnetoresistive film MR 4 that are opposite to each other in the W-axis direction. Further, in FIG. 3G, an arrow denoted by JS 43 indicates the magnetization direction of a magnetization free layer S 43 (described later) in an initial state in each magnetoresistive film MR 4. The direction of magnetization JS 43 of the initial state magnetization free layer S 43 may be substantially parallel to the direction of the W axis. Further, an arrow denoted by reference symbol JS 41 in FIG. 3G indicates the direction of magnetization JS 41 of the magnetization pinned layer S 41 (described later) in each magnetoresistive film MR 4. The direction of magnetization JS 41 may be substantially parallel to the direction of the V axis and orthogonal to the direction of the W axis. The magnetoresistive films MR 4 may therefore be sensitive in the V-axis direction.The upper wiring line pattern 61U and the upper wiring line pattern 62U of the coil 6 respectively overlap the first end part 14A and the second end part 14B in the Z-axis direction. The lower wiring line patterns 61LA to 64LA of the helical coil 6 may respectively overlap the first end part 11A in the Z-axis direction. Also, the lower wiring line patterns 65LA to 68LA of the helical coil 6 may respectively overlap the second end part 14B in the Z-axis direction. In a specific but non-limiting example, the upper wiring line pattern 61U may overlap the first end 14AT in the first end portion 14A in the Z-axis direction, and the upper wiring line pattern 62U may overlap the second end 14BT in the second end portion 14B in the Z-axis direction. Therefore, in the element 14 as in the magnetoresistive effect element 11, the supply of the adjusting current Is to the helical coil 6 causes the adjusting magnetic field SF- in the -X direction to be applied to the magnetoresistive film MR 4. Further, the supply of the restoring current Ir to the helical coil 6 causes the restoring magnetic field RF+in the +X direction to be applied to the magnetoresistive film MR 4.[Magnetoresistive Effect Element 13]FIG. 4A is a planar diagram for explaining a detailed configuration of the magnetoresistive effect element 13 formed in the element formation region X 3 of the current detection unit 10B. Further, FIGS. 4B to 4E are cross-sectional diagrams each illustrating a part of the current detection unit 10B. Note that FIG. 4A shows a plurality of magnetoresistive films MR 3 that form the magnetoresistive effect element 13 and the upper wiring line patterns 61UB and 62UB that are disposed over the magnetoresistive films MR 3 and omits other components.As illustrated in FIG. 4A, the magnetoresistive effect element 13 may include a plurality of magnetoresistive films MR 3 arranged in the Y-axis direction. The plurality of magnetoresistive films MR 3 may be coupled in series with each other and each extend in the W-axis direction inclined in both the X-axis direction and the Y-axis direction.Therefore, the plurality of magnetoresistive films MR 3 may each have shape anisotropy in the W-axis direction. Each of the plurality of magnetoresistive films MR 3 includes a first end part 13A, a second end part 13B, and an intermediate part 13C between the first end part 13A and the second end part 13B. Note that the first end part 13A and the second end part 13B may be portions each including a first end part 13AT and a second end part 13BT of the magnetoresistive film MR 3 that are opposed to each other in the W-axis direction. Further, in FIG. 4A, an arrow denoted by JS 33 indicates a magnetization direction of a magnetization free layer S 33 (described later) in an initial state in each magnetoresistive film MR 3. The direction of magnetization JS 33 of the initial state magnetization free layer S 33 may be substantially parallel to the direction of the W axis. Further, an arrow denoted by reference symbol JS 31 in FIG. 4A indicates the direction of magnetization JS 31 of the magnetization pinned layer S 31 (described later) in each magnetoresistive film MR 3. The direction of magnetization JS 31 may be substantially parallel to the direction of the V axis and orthogonal to the direction of the W axis. The magnetoresistive films MR 3 may therefore be sensitive in the V-axis direction.The upper wiring line pattern 61UB and the upper wiring line pattern 62UB of the coil 6 respectively overlap the first end portion 13A and the second end portion 13B in the Z-axis direction. The lower wiring line patterns 61LA to 64LA of the helical coil 6 may respectively overlap the first end part 13A in the Z-axis direction. Also, the lower wiring line patterns 65LA to 68LA of the helical coil 6 may respectively overlap the second end part 13B in the Z-axis direction. In a specific but non-limiting example, the upper wiring line pattern 61UB may overlap the first end 13AT in the first end portion 13A in the Z-axis direction, and the upper wiring line pattern 62UB may overlap the second end 13EA in the second end portion 13B in the Z-axis direction.Accordingly, in the current detection unit 10B, as illustrated in FIGS. 4A and 4B, supplying the adjustment current Is to the helical coil 6 causes the adjustment magnetic field SF+in the +X direction to be applied to the magnetoresistive film MR 3. As shown in FIG. 4C, the supply of the reset current Ir to the helical coil 6 causes the reset magnetic field RF- in the -X direction to be applied to the magnetoresistive film MR 3. Further, as illustrated in FIG. 4D, in a case where the signal current Im 1 in the +Y direction flows through the bus 5, the signal magnetic field Hm 1 in the +X direction may be applied to the magnetoresistive film MR 3. In this case, the supply of the feedback current If 1 to the helical coil 6 may cause the feedback magnetic field Hf 1 to be applied to the magnetoresistive film MR 3 in the -X direction to cancel the signal magnetic field Hm 1. Further, as illustrated in FIG. 4E, in a case where the signal current Im 2 flows through the bus 5 in the -Y direction, the signal magnetic field Hm 2 may be applied to the magnetoresistive film MR 3 in the -X direction. In this case, the supply of the feedback current If 2 to the helical coil 6 may cause the feedback magnetic field Hf 2 to be applied to the magnetoresistive film MR 3 in the +X direction to cancel the signal magnetic field Hm 2.[Magnetoresistive Effect Element 12]FIG. 4F is a planar diagram for explaining a detailed configuration of the magnetoresistive effect element 12 formed in the element formation region X 2. Note that FIG. 4F shows a plurality of magnetoresistive films MR 2 that form the magnetoresistive effect element 12 and the upper wiring line patterns 61UB and 62UB that are disposed over the magnetoresistive films MR 2 and omits other components.As illustrated in FIG. 4F, the magnetoresistive effect element 12 may include a plurality of magnetoresistive films MR 2 arranged in the Y-axis direction. The plurality of magnetoresistive films MR 2 may be coupled in series with each other and each extend in the W-axis direction inclined in both the X-axis direction and the Y-axis direction. Therefore, the plurality of magnetoresistive films MR 2 may each have shape anisotropy in the W-axis direction. Each of the plurality of magnetoresistive films MR 2 includes a first end part 12A, a second end part 12B, and an intermediate part 12C between the first end part 12A and the second end part 12B. Note that the first end part 12A and the second end part 12B may be portions each including a first end part 12AT and a second end part 12BT of the magnetoresistive film MR 2 that are opposed to each other in the W-axis direction. Further, in FIG. 4F, an arrow denoted by JS 23 indicates a magnetization direction of a magnetization free layer S 23 (described later) in an initial state in each magnetoresistive film MR 2. The direction of magnetization JS 23 of the initial state magnetization free layer S 23 may be substantially parallel to the direction of the W axis. Further, an arrow denoted by reference symbol JS 21 in FIG. 4F indicates the direction of magnetization JS 21 of the magnetization pinned layer S 21 (described later) in each magnetoresistive film MR 2. The direction of magnetization JS 21 may be substantially parallel to the direction of the V axis and perpendicular to the direction of the W axis. The magnetoresistive films MR 2 may therefore be sensitive in the V-axis direction.The upper wiring line pattern 61UB and the upper wiring line pattern 62UB of the coil 6 respectively overlap the first end part 12A and the second end part 12B in the Z-axis direction. The lower wiring line patterns 61LA to 64LA of the helical coil 6 may respectively overlap the first end part 12A in the Z-axis direction. Also, the lower wiring line patterns 65LA to 68LA of the helical coil 6 may respectively overlap the second end part 12B in the Z-axis direction. In a specific but non-limiting example, the upper wiring line pattern 61UB may overlap the first end 12AT in the first end portion 12A in the Z-axis direction, and the upper wiring line pattern 62UB may overlap the second end 12EA in the second end portion 12B in the Z-axis direction. Accordingly, in the magnetoresistive effect element 12 as well as the magnetoresistive effect element 13, the energization of the bias current Is to the helical coil 6 causes the bias magnetic field SF+in the +X direction to be applied to the magnetoresistive film MR 2. Further, the supply of the restoring current Ir to the helical coil 6 causes the restoring magnetic field RF- to be applied to the magnetoresistive film MR2 in the -X direction.[Bus 5]The bus 5 may be a conductor extending in the Y-axis direction, for example, and is configured to be supplied with a signal current Im (Im 1, Im 2) detected by the current detection device 100. A material constituting the bus 5 may be a highly electrically conductive material such as Cu (copper). An alloy containing Fe (iron) or Ni (nickel) or stainless steel may also be used as a constituent material of the bus 5. A signal current Im 1 flowing through the inside of the bus 5, for example, in the +Y direction allows the bus 5 to generate a signal magnetic field Hm 1 around the bus 5. In this case, the generated signal magnetic field Hm1 is applied to the magnetoresistive effect elements 11 to 14 in the +X direction. A signal current Im2 flowing through the inside of the bus 5 in the -Y direction generates a signal magnetic field Hm2 applied to the magnetoresistive effect elements 11 to 14 in the -X direction.[Helical Coil 6]FIGS. 5A and 5B are enlarged schematic perspective views of a part of the coil 6. As illustrated in FIGS. 5A and 5B, the coil part 6A may be wound around the magnetoresistive effect elements 11 and 14 in a first winding direction CD 1 while extending in the X-axis direction, for example. The coil part 6B may be wound around the magnetoresistive effect elements 13 and 12 in a second winding direction CD 2 opposite to the first winding direction CD 1 while extending in the X-axis direction. A first end of the coil part 6A and a first end of the coil part 6A may be coupled to each other via a coupling part 6J. A terminal T 3 may be coupled to the coupling part 6J. The terminal T3 may be, for example, a frame ground (FG). A terminal T 1 may be coupled to a second end of the coil part 6A and a terminal T 2 may be coupled to a second end of the coil part 6B. Note that FIGS. 5A and 5B illustrate an example in which two current detection units 10A each corresponding to the coil part 6A and two current detection units 10B each corresponding to the coil part 6B are continuous. Further, in FIGS. 5A and 5B, the two upper wiring line patterns 61U and 62U are simplified into a single upper wiring line 6U, the eight lower wiring line patterns 61LA to 68LA are simplified into a single lower wiring line 6LA, the two upper wiring line patterns 61UB and 62UB are simplified into a single upper wiring line 6UB, and the eight lower wiring line patterns 61LB to 68LB are simplified into a single lower wiring line 6LB.The helical coil 6 may be an electric wiring line surrounding the magnetoresistive effect elements 11 to 14 while being electrically insulated from each of the magnetoresistive effect elements 11 to 14. A material constituting the helical coil 6 may be, for example, a highly electrically conductive material such as Cu (copper), as in the bus 5.As illustrated in FIG. 5A, the helical coil 6 may be configured such that the adjustment current Is and the reset current Ir are supplied from the power supply between, e.g., the terminal T 1 and the terminal T 2. Note that arrows in FIG. 5A indicate the adjusting current Is flowing from the terminal T 2 to the terminal T 1. The reset current Ir is to flow in the opposite direction to the direction indicated by the arrows in FIG. 5A, and thus flow from the terminal T 1 to the terminal T 2.As shown in FIG. 5B, the helical coil 6 may be configured to receive the feedback currents If 1 and If 2 from the power supply between the terminal T 1 and the terminal T 3 and between the terminal T 2 and the terminal T 3. Note that arrows in FIG. 5B indicate the feedback current If 1 flowing from the terminal T 3 to the terminal T 1 and also from the terminal T 3 to the terminal T 2. The feedback current If2 is to flow in the opposite directions to the directions indicated by the arrows in FIG. 5B, i.e., from the terminal T1 to the terminal T3 and also from the terminal T2 to the terminal T3.[Magnetoresistive films MR 1 to MR 4]The magnetoresistive films MR 1 and MR 3 may each have a resistance value that decreases when a signal magnetic field is applied in the +V direction and increases when a signal magnetic field is applied in the -V direction. The magnetoresistive films MR 2 and MR 4 may each have a resistance value that increases when a signal magnetic field is applied in the +V direction and decreases when a signal magnetic field is applied in the -V direction.FIG. 6A is an exploded perspective view showing a stacked structure of the magnetoresistive film MR 1. FIG. 6B is an exploded perspective diagram showing a stacked structure of the magnetoresistive film MR 2. FIG. 6C is an exploded perspective diagram illustrating a stacked structure of the magnetoresistive film MR 3. FIG. 6D is an exploded perspective diagram illustrating a stacked structure of the magnetoresistive film MR 4.As illustrated in FIGS. 6A to 6D, the magnetoresistive films MR 1 to MR 4 may each have a spin valve structure having a plurality of stacked functional films including magnetic layers. In a specific but non-limiting example, as illustrated in FIG. 6A, the magnetoresistive film MR 1 may have a configuration in which the magnetization pinned layer S 11, an intermediate layer S 12, and the magnetization free layer S 13 are sequentially stacked in the Z-axis direction. The pinned magnetization layer S 11 may have the magnetization JS 11 fixed in a +V direction. The intermediate layer S 12 may be a non-magnetic body. The magnetization free layer S 13 may have the magnetization JS 13 that varies depending on the magnetic flux density of the signal magnetic field. Each of the pinned magnetization layer S 11, the intermediate layer S 12, and the magnetization free layer S 13 may be a thin film extending in an X-Y plane. Accordingly, the orientation of magnetization JS 13 of the magnetization free layer S 13 may be rotatable in the X-Y plane.As illustrated in FIG. 6B, the magnetoresistive film MR 2 may have a configuration in which the magnetizable layer S 21, an intermediate layer S 22, and the magnetization free layer S 23 are stacked in order in the Z-axis direction. The pinned magnetization layer S 21 may have the magnetization JS 21 fixed in a -V direction. The intermediate layer S 22 may be a non-magnetic body. The magnetization free layer S 23 may have the magnetization JS 23 that varies depending on the magnetic flux density of the signal magnetic field. Each of the pinned magnetization layer S 21, the intermediate layer S 22, and the magnetization free layer S 23 may be a thin film extending in the X-Y plane. Accordingly, the orientation of magnetization JS 23 of the magnetization free layer S 23 may be rotatable in the X-Y plane.As illustrated in FIG. 6C, the magnetoresistive film MR 3 may have a configuration in which the magnetizable layer S 31, an intermediate layer S 32, and the magnetization free layer S 33 are stacked in order in the Z-axis direction. The pinned magnetization layer S 31 may have the magnetization JS 31 fixed in the +V direction. The intermediate layer S 32 may be a non-magnetic body. The magnetization free layer S 33 may have the magnetization JS 33 that varies depending on the magnetic flux density of the signal magnetic field. Each of the pinned magnetization layer S 31, the intermediate layer S 32, and the magnetization free layer S 33 may be a thin film extending in the X-Y plane. Accordingly, the orientation of magnetization JS 33 of the magnetization free layer S 33 may be rotatable in the X-Y plane.As illustrated in FIG. 6D, the magnetoresistive film MR 4 may have a configuration in which the pinned magnetization layer S 41, an intermediate layer S 42, and the Z-axis direction magnetization free layer S 43 are sequentially stacked. The pinned magnetization layer S 41 may have the magnetization JS 41 fixed in the -V direction. The intermediate layer S 42 may be a non-magnetic body. The magnetization free layer S 43 may have the magnetization JS 43 that varies depending on the magnetic flux density of the signal magnetic field. Each of the pinned magnetization layer S 41, the intermediate layer S 42, and the magnetization free layer S 43 may be a thin film extending in the X-Y plane. Accordingly, the orientation of magnetization JS 43 of the magnetization free layer S 43 may be rotatable in the X-Y plane.As described above, the pinned magnetization layers S 11 and S 31 in the magnetoresistive films MR 1 and MR 3 may have their respective magnetizations JS 11 and JS 31 in the +V direction, while the pinned magnetization layers S 21 and S 41 in the magnetoresistive films MR 2 and MR 4 may have their respective magnetizations JS 21 and JS 41 in the -V direction.Note that in the magnetoresistive films MR 1 to MR 4, the magnetization pinned layers S 11, S 21, S 31, and S 41, the intermediate layers S 12, S 22, S 32, and S 42, and the magnetization free layers S 13, S 23, S 33, and S 43 may each have a single layer structure or a multi-layer structure.The magnetization pin layers S 11, S 21, S 31, and S 41 may each include a ferromagnetic material such as cobalt (Co), cobalt-iron alloy (CoFe), or cobalt-iron-boron alloy (CoFeB). Optionally, the magnetoresistive films MR 1 to MR 4 may be provided with respective antiferromagnetic layers (not shown) adjacent to the pinned magnetization layers S 11, S 21, S 31, and S 41 and located on the opposite side to the intermediate layers S 12, S 22, S 32, and S 42. Such antiferromagnetic layers may each include an antiferromagnetic material such as a platinum-manganese alloy (PtMn) or an iridium-manganese alloy (IrMn). In the magnetoresistive films MR 1 to MR 4, the antiferromagnetic layers may be in a state in which a spin magnetic moment in the +V direction and a spin magnetic moment in the -V direction completely cancel each other, and may act to pin the orientations of the magnetizations JS 11 and JS 31 of the pinned magnetization layers S 11 and S 31 adjacent to the antiferromagnetic layers in the +V direction or the orientations of the magnetizations JS 21 and JS 41 of the pinned magnetization layers S 21 and S 41 adjacent to the antiferromagnetic layers in the -V direction.In a case where the spin valve structure serves as a magnetic tunnel junction (MTJ) film, the intermediate layers S 12, S 22, S 32, and S 42 may each be a nonmagnetic tunnel barrier layer containing magnesium oxide (MgO), for example, and may each be thin enough to pass a quantum mechanics-based tunnel current. The tunnel barrier layer containing MgO can be obtained by a method such as sputtering using a target containing MgO, oxidation treatment of a thin film of magnesium (Mg), or reactive sputtering of magnesium in an oxygen atmosphere. Further, an oxide or a nitride of aluminum (Al), tantalum (Ta), or hafnium (Hf), and MgO may be used to configure the intermediate layers S 12, S 22, S 32, and S 42. Note that the intermediate layers S 12, S 22, S 32, and S 42 may each include a platinum group element such as ruthenium (Ru) or gold (Au), or a non-magnetic metal such as copper (Cu). In such a case, the spin valve structure may serve as a giant magnetoresistive effect (GMR) film.The magnetization free layers S 13, S 23, S 33, and S 43 may be soft ferromagnetic layers and include substantially the same materials. The magnetization free layers S 13, S 23, S 33, and S 43 may be made of, for example, a cobalt-iron alloy (CoFe), a nickel-iron alloy (NiFe), or a cobalt-iron-boron alloy (CoFeB).[Bridge Circuit 7]The four magnetoresistive effect elements 11 to 14 may be bridged to a bridge circuit 7 as illustrated in FIG. 7. The magnetoresistive effect elements 11 to 14 may each be configured to detect a change in a signal magnetic field Hm (Hm 1, Hm 2) to be detected. As described above, the magnetoresistive effect elements 11 and 13 may each have a resistance value that decreases when the signal magnetic field Hm 1 is applied in the +V direction and increases when the signal magnetic field Hm 2 is applied in the -V direction. The magnetoresistive effect elements 12 and 14 may each have a resistance value that increases in the +V direction when the signal magnetic field Hm 1 is applied and decreases in the -V direction when the signal magnetic field Hm 2 is applied. Accordingly, the magnetoresistive effect elements 11 and 13 and the magnetoresistive effect elements 12 and 14 can output corresponding signals different in phase from each other by 180°, for example, in response to a change in the signal magnetic field Hm.As illustrated in FIG. 7, the bridge circuit 7 may have a configuration in which the series-connected magnetoresistive effect elements 11 and 12 and the series-connected magnetoresistive effect elements 13 and 14 are connected in parallel with each other. In a specific but non-limiting example, in the bridge circuit 7, one end of the magnetoresistive effect element 11 and one end of the magnetoresistive effect element 12 may be coupled to each other at a node P 1; one end of the magnetoresistive effect element 13 and one end of the magnetoresistive effect element 14 may be coupled to each other at a node P 2; another end of the magnetoresistive effect element 11 and another end of the magnetoresistive effect element 14 may be coupled to each other at a node P 3; and another end of the magnetoresistive effect element 12 and another end of the magnetoresistive effect element 13 may be coupled to each other at a node P 4. Here, the node P3 may be connected to a power supply Vcc and the node P4 may be connected to a ground terminal GND. The node P 1 may be connected to an output terminal Vout 1 and the node P 2 may be connected to an output terminal Vout 2. The output terminal Vout1 and the output terminal Vout2 may each be coupled to an input terminal of, for example, a difference detector 8. The difference detector 8, when a voltage is applied between the node P 3 and the node P 4, can detect a potential difference between the node P 1 and the node P 2 (i.e., a difference between voltage drops occurring at the magnetoresistive effect element 11 and the magnetoresistive effect element 14) and output the detected potential difference as the difference signal S to a calculation circuit 9.In FIG. 7, arrows denoted by reference numerals JS 11 and JS 31 schematically indicate the orientations of the magnetizations JS 11 and JS 31 of the pinned magnetization layers S 11 and S 31 in the magnetoresistive effect elements 11 and 13. Further, arrows with the signs JS 21 and JS 41 in FIG. 7 schematically indicate the orientations of the magnetizations JS 21 and JS 41 of the pinned magnetization layers S 21 and S 41 in the magnetoresistive effect elements 12 and 14. As illustrated in FIG. 7, the orientation of the magnetizations JS 11 and JS 31 and the orientation of the magnetizations JS 21 and JS 41 may be opposite to each other. In other words, FIG. 7 illustrates that the resistance value of the resistance magneto-resistive element 11 and the resistance value of the resistance magneto-resistive element 13 may change (e.g., increase or decrease) in the same direction in response to a change in the signal magnetic field Hm. FIG. 7 also illustrates that both the resistance value of the magnetoresistive effect element 12 and the resistance value of the magnetoresistive effect element 14 may change (e.g., decrease or increase) in response to the change in the signal magnetic field Hm in a direction opposite to the direction of the change in the resistance value of each of the magnetoresistive effect elements 11 and 13.A current I 10 from the power supply Vcc may be divided into a current I 1 and a current I 2 at the node P 3. The current I 1 or the current I 2 may be supplied to each of the magnetoresistive effect elements 11 to 14 constituting the bridge circuit 7. The signals e1 and e2 can be taken from the nodes P1 and P2 of the bridge circuit 7, respectively. The signals e1 and e2 can be supplied to the difference detector 8.[Operation and Operation of Current Detection Apparatus 100]In the current detection device 100 according to the present example embodiment, it is possible to detect changes in the signal magnetic fields generated by the signal currents Im 1 and Im 2 flowing through the bus 5 by calculating a potential difference V 0 at the calculation circuit 9.[Recognition Operation]First, consider a state of the current detection device 100 in which no signal magnetic field Hm is applied. Here, the respective resistance values of the magnetoresistive effect elements 11 to 14 when a current I 10 passes through the bridge circuit 7 are denoted by r 1 to r 4. The current I 10 from the power supply Vcc may be divided into two currents, i.e., the current I 1 and the current I 2 at the node P 3. Thereafter, the current I 1 flowing through the magnetoresistive effect element 11 and the magnetoresistive effect element 12 and the current I 2 flowing through the magnetoresistive effect element 14 and the magnetoresistive effect element 13 may combine to form a current I 1 at the node P 4. In such a case, a potential difference V between the node P3 and the node P4 is represented as follows.Further, a potential V1 at the node P1 and a potential V2 at the node P2 are shown as follows.Accordingly, the potential difference V0 between the node P1 and the node P2 is as follows.Here, starting from the equation (1), the following equation holds.For the bridge circuit 7, it is possible to determine an amount of resistance change by measuring the potential difference V0 between the node P2 and the node P1 represented by the above equation (3) upon application of the signal magnetic field Hm. Here, assume that the application of the signal magnetic field Hm results in changes in the respective resistance values R 1 to R 4 of the magnetoresistive effect elements 11 to 14 by the amounts of the changes ΔR 1 to ΔR 4. In other words, we assume that the respective resistance values R1 to R4 of the magneto-resistive elements 11 to 14 after application of the signal magnetic field Hm are as follows.In this case, the potential difference V0 upon application of the signal magnetic field Hm is given as follows from the equation (3).Since the current detection device 100 can be configured such that the resistance values R 1 and R 3 of the magnetoresistive effect elements 11 and 13 and the resistance values R 2 and R 4 of the magnetoresistive effect elements 12 and 14 have changes in the opposite direction to each other, the amount of change ΔR 4 and the amount of change ΔR 1 can cancel each other out, and also the amount of change ΔR 3 and the amount of change ΔR 2 can cancel each other out. In this case, when a comparison is made between before and after the application of the signal magnetic field, there is substantially no increase in denominators of respective terms of the equation (4). In contrast, an increase or decrease in the counters of the respective terms is exhibited because the amount of change ΔR 1 and the amount of change ΔR 4 always have opposite signs.Assume that all the magnetoresistive effect elements 11 to 14 have exactly the same characteristics, i.e., assume that r1=r2=r3=r4=R and that ΔR1=-ΔR2=ΔR3=-ΔR4=ΔR. In such a case, the equation (4) is expressed as follows.In this way, it is possible to measure the magnitudes of signal magnetic fields Hm by using the magnetoresistive effect elements 11 to 14 whose characteristic values such as ΔR / R are known, and this makes it possible to estimate the magnitudes of the signal currents Im 1 and Im 2 that generate the signal magnetic fields Hm. In some embodiments, current sensing device 100 may include a controller 70. The controller 70 may be, for example, a microcomputer. The controller 70 may include a central processing unit (CPU) configured to execute a control program for executing predetermined control processing. The controller 70 may be configured to sequentially control the magnitudes of the feedback currents If 1 and If 2 to generate feedback magnetic fields Hf 1 and Hf 2 having intensities that cancel out the signal magnetic fields Hm generated by the signal currents Im 1 and Im 2 flowing through the bus 5, in other words, to allow an output of the bridge circuit 7 to remain zero. In such a case, it can be assumed that the magnitudes of the feedback currents If 1 and If 2 are substantially equal to those of the signal currents Im 1 and Im 2 flowing through the bus 5.[Setting and Resetting Operations]In such a current detection device, the magnetizations of the free magnetization layers in the magnetoresistive effect elements can be selectively aligned once in a predetermined direction before an operation for detecting a signal magnetic field is performed. One reason for this is that this serves to increase the accuracy of detection of the signal magnetic field Hm. In a specific but non-limiting example, an external magnetic field of a known magnitude may be applied alternately in a predetermined direction and in a direction opposite thereto. Such processes are referred to as set and reset processes on the magnetization of a layer with free magnetization.In the current detection device 100 of the present example embodiment, the adjustment operation can be performed by supplying an adjustment current Is to the helical coil 6. The supply of the adjusting current Is to the helical coil 6 causes an adjusting magnetic field SF- and an adjusting magnetic field SF+ to be generated around the helical coil 6, respectively, as shown in FIGS. 3B and 4B. Thereby, in the current detection unit 10A, it is possible to apply the adjustment magnetic field SF- in the -X direction to the magnetoresistive films MR 1 and MR 4 of the effect magnetoresistive elements 11 and 14. As a result, the magnetizations of the magnetization free layers S 13 and S 43 of the magnetoresistive films MR 1 and MR 4 are oriented in the -W direction, and thus the adjustment operation is performed. In the current detection unit 10B, it is possible to apply the adjustment magnetic field SF+in the +X direction to the magnetoresistive films MR 2 and MR 3 of the magnetoresistive elements 12 and 13. Thereby, the magnetizations of the magnetization free layers S 23 and S 33 of the magneto-resistive films MR 2 and MR 3 are oriented in the +W direction, and thus the adjustment operation is performed. Further, the recovery can be performed by supplying the helical coil 6 with a recovery current Ir. The supply of the restoring current Ir to the helical coil 6 causes a restoring magnetic field RF+ and a restoring magnetic field RF- to be generated around the helical coil 6, respectively, as shown in FIGS. 3C and 4C. Consequently, in the current detection unit 10A, it is possible to apply the restoring magnetic field RF+in the +X direction to the magnetoresistive films MR 1 and MR 4 of the effect magnetoresistive elements 11 and 14. As a result, the magnetizations of the magnetization free layers S 13 and S 43 of the magneto-resistive films MR 1 and MR 4 are oriented in the +W direction, and thus the reset operation is performed. In the current detection unit 10B, it is possible to apply the restoring magnetic field RF- in the -X direction to the magnetoresistive films MR 2 and MR 3 of the effect magnetoresistive elements 12 and 13. Thereby, the magnetizations of the magnetization free layers S 23 and S 33 of the magneto-resistive films MR 2 and MR 3 are aligned in the -W direction, and the reset operation is performed.[Example Effects of Current Detection Device 100]In the present exemplary embodiment, for example, in the magnetoresistive effect element 11, the upper wiring line pattern 61A and the upper wiring line pattern 62U of the helical coil 6 respectively overlap the first end part 11A and the second end part 11B in the Z-axis direction. As a result, the intensities (absolute values) of the adjustment magnetic field SF- and the reset magnetic field RF+ to be applied to the first end part 11A and the intensities (absolute values) of the adjustment magnetic field SF- and the reset magnetic field RF+ to be applied to the second end part 11B may be higher than the intensities (absolute values) of the adjustment magnetic field SF- and the reset magnetic field RF+ to be applied to the intermediate part 11C. Thereby, the adjustment magnetic field SF and the reset magnetic field RF generated by the helical coil 6 can be effectively applied to the first end part 11A and the second end part 11B of the magnetoresistive film MR 1. The direction of magnetization JS 13 of the magnetization free layer S 13 is thereby adjusted and reset uniformly and sufficiently throughout the magneto-resistive film MR 1. Similar work is also available for the magnetoresistive effect elements 12 to 14. Consequently, according to the current detection device 100 of the present example embodiment, it is possible to achieve high accuracy of current detection even with reduced dimensions.Moreover, in some embodiments, instead of a conductor wide enough to overlap the entire magnetoresistive film, the helical coil 6 may be provided that overlaps only the respective portions (the first end parts 11A to 14A and the second end parts 11B to 14B) of the magnetoresistive films. Thereby, for example, the upper wiring line patterns 61U, 61UB, 62A, and 62UB can be small in width. Thereby, a current value to be supplied to the coil 6 in order to obtain the predetermined adjustment magnetic fields SF and reset magnetic fields RF and the predetermined feedback magnetic fields Hf 1 and Hf 2 can be kept small.Further, in some embodiments, a branching part may be formed in some portions of the helical coil 6. In a specific but non-limiting example, the upper wiring line 6U may be configured by the two upper wiring line patterns 61U and 62U coupled in parallel with each other, and the lower wiring line 6LA may be configured by the eight lower wiring line patterns 61LA to 68LA coupled in parallel with each other. Such embodiments make it possible to arrange a larger number of magnetoresistive films MR 1 to MR 4 than the number of turns of the helical coil 6 in the Y-axis direction, as compared with a case of using a helical coil that does not include such a branching part. This contributes to higher integration.Moreover, in some embodiments, the spiral coil 6 in which the coil part 6A and the coil part 6B are wound in opposite directions as illustrated in FIGS. 5A and 5B may be used integrally. Thereby, it is possible to form, within a narrower range, the plurality of magnetoresistive effect elements 11 to 14 including the magnetoresistive films MR 1 to MR 4, the magnetoresistive films MR 1 to MR 4 including two pairs of magnetoresistive films that are opposite to each other with respect to the setting / resetting direction for the magnetization directions of the respective magnetization free layers. Moreover, the use of the single helical coil 6 including the integrated coil parts 6A and 6B enables a reduction in the number of terminals for current supply as compared with a case where two helical coils are provided. This contributes to higher integration.Further, in some embodiments, the setting / resetting direction for the magnetization free layers S 13 and S 43 of the magneto-resistive films MR 1 and MR 4 and the setting / resetting direction for the magnetization free layers S 23 and S 33 of the magneto-resistive films MR 2 and MR 3 may be opposite. By configuring the bridge circuit 7 with the magnetoresistive effect elements including pairs of magnetoresistive films in which the magnetization directions of the respective magnetization free layers are opposite to each other upon setting or resetting, it is possible to reduce the noise resulting from an unwanted disturbance magnetic field and reduce the error resulting from the voltage distortion.[2. Modification Examples]The technology has been described above with reference to the example embodiment. However, the technology is not limited thereto and may be modified in various ways. For example, in the above example embodiment, four magneto-resistive effect elements are used to form a full bridge circuit. However, in some embodiments of the disclosure, for example, two magneto-resistive effect elements may be used to form a half bridge circuit. Further, the plurality of magnetoresistive films may be identical or different in shape and dimensions from each other. The dimensions of the devices and the arrangement of the devices are illustrative only and are not limited thereto. In the above example embodiment, the current detection device including the helical coil 6 has been described, the winding direction of which is reversed at an intermediate point along the coil; however, the technology is not limited thereto. In some embodiments of the disclosure, the current detection apparatus may include a helically wound coil wound in one direction, such as a helically wound coil 60 illustrated in the figures. 8 and 9, for example. FIGS. 8 and 9 are enlarged schematic perspective views of a part of the coil 60 as a modification example of the coil 6, and correspond to FIGS. 5A and 5B, respectively. The helical coil 60 may include a coil part 60A and a coil part 60B. As illustrated in FIGS. 8 and 9, the coil part 60A may be wound around the magnetoresistive effect elements 11 and 14 in the first winding direction CD 1 while extending in the X-axis direction, for example. The coil part 60B may be wound around the magnetoresistive effect elements 13 and 12 in the first winding direction CD 1, extending in the X-axis direction. A first end of the coil part 60A and a first end of the coil part 60B may be coupled to each other via a coupling part 60J. The terminal T 3 can be coupled to the coupling part 60J. The terminal T3 may be, for example, a frame ground (FG). The terminal T 1 may be coupled to a second end of the coil part 60A and the terminal T 2 may be coupled to a second end of the coil part 60B. As shown in FIG. 8, the helical coil 60 may be configured to receive the feedback currents If 1 and If 2 between, e.g., the terminal T 1 and the terminal T 2 from the power supply. Note that in FIG. 8, arrows indicate the feedback current If 1 flowing from the terminal T 2 to the terminal T 1. The feedback current If2 is to flow in the opposite direction to the direction indicated by the arrows in FIG. 8, and thus flow from the terminal T1 to the terminal T2.As shown in FIG. 9, the helical coil 60 may be configured to receive the adjustment current Is and the reset current Ir from the power supply between the terminal T 1 and the terminal T 3, and between the terminal T 2 and the terminal T 3. Note that in FIG. 9, arrows indicate the adjusting current Is flowing from the terminal T 3 to the terminal T 1 and also from the terminal T 3 to the terminal T 2. The reset current Ir is intended to flow in the opposite direction to the directions indicated by the arrows in Fig. 9, i.e. from the terminal T1 to the terminal T3 and also from the terminal T2 to the terminal T3.In the present modification example, the setting and resetting operations can be performed by alternately applying the setting current Is and the resetting current Ir between the terminal T1 and the terminal T3, and between the terminal T2 and the terminal T3. Further, the application of the feedback currents If1 and If2 between the terminal T1 and the terminal T2 enables the measurement of the signal currents Im1 and Im2 when the signal currents Im1 and Im2 flowing through the bus 5 are detected.In the above example embodiment, the current detection apparatus that detects a change in signal current flowing through a conductor has been described; however, the applications of the technology are not limited thereto. The technology is also applicable to, for example, an electromagnetic compass that detects earth magnetism, such as a magnetic field detection device 200 according to an example embodiment of the disclosure illustrated in the figures. 10A and 10B. The magnetic field detection device 200 illustrated in FIGS. 10A and 10B may be a two-axis magnetic field detection compass configured to detect, for example, a change in the magnetic field in the Y-axis direction and a change in the magnetic field in the Z-axis direction. FIG. 10A is a schematic planar diagram showing an example of an overall configuration of the magnetic field detection device 200. FIG. 10B is a circuit diagram illustrating a circuit configuration example of the magnetic field detection device 200.As illustrated in FIG. 10A, the magnetic field detection device 200 may include two magnetic field detection units AR 2 and AR 3 on a substrate 2.As illustrated in FIG. 10B, in the magnetic field detection device 200, a bridge circuit 7L including four magneto-resistive effect elements 21 to 24 may be formed in the magnetic field detection unit AR 2, and a bridge circuit 7R including four magneto-resistive effect elements 31 to 34 may be formed in the magnetic field detection unit AR 3. For the magnetic field detection unit 200, it is possible to detect changes in the magnetic field in the Y-axis direction and the Z-axis direction by using the two bridge circuits 7L and 7R. The magnetoresistive effect elements 21 to 24 and 31 to 34 are configured to detect a change in a signal magnetic field to be detected. Here, the magnetoresistive effect elements 21, 23, 31, and 33 may each have a resistance value that decreases when a signal magnetic field is applied in the +Y direction or a signal magnetic field is applied in a +Z direction, and increases when a signal magnetic field is applied in the -Y direction or a signal magnetic field is applied in a -Z direction. The magnetoresistive effect elements 22, 24, 32, and 34 may each have a resistance value that increases upon application of a signal magnetic field in the +Y direction or a signal magnetic field in the +Z direction, and decreases upon application of a signal magnetic field in the -Y direction or a signal magnetic field in the -Z direction. Accordingly, in response to a change in the signal magnetic field, the magnetoresistive effect elements 21, 23, 31, and 33 and the magnetoresistive effect elements 22, 24, 32, and 34 can output signals different in phase from each other by 180°, for example. The signals extracted by the bridge circuit 7L may flow into a difference detector 8L, and the signals extracted by the bridge circuit 7R may flow into a difference detector 8R. A difference signal SL from the difference detector 8L and a difference signal SR from the difference detector 8R may both be incorporated into the arithmetic circuit 9.The magnetic field detection unit AR 2 may have substantially the same configuration as the current detection device 100 described in the above example embodiment, except that: the bus 5 is not provided; the element formation regions YZ 1 and YZ 4 are provided instead of the element formation regions X 1 to X 4; and a helical coil C 2 is provided instead of the helical coil 6. The helical coil C 2 may have substantially the same structure as the helical coil 6, and may include the coil parts C 2A and C 2B. The respective upper wiring lines in the coil parts C 2A and C 2B may be branched into four upper wiring lines, respectively, which are coupled in parallel with each other, and may be configured such that an adjustment current IC 2 in the +Y direction may flow therethrough.The magnetic field detection unit AR 3 may have substantially the same configuration as the current detection device 100 described in the above example embodiment, except that: the bus 5 is not provided; the element formation regions YZ 3 and YZ 2 are provided instead of the element formation regions X 1 to X 4; and a helical coil C 3 is provided instead of the helical coil 6. The helical coil C 3 may have substantially the same structure as the helical coil 6, and may include the coil parts C 3A and C 3B. The respective upper wiring lines in the coil parts C 3A and C 3B may be branched into four upper wiring lines, respectively, which are coupled in parallel with each other, and may be configured such that a reset current IC 3 in the -Y direction may flow therethrough. FIG. 11A is a planar diagram for explaining a detailed configuration of the magnetoresistive effect elements 21 and 31 formed in the element formation region YZ 1. FIG. 11B is a cross-sectional view taken along the line XIB-XIB in FIG. 11A as viewed in the arrow direction. In the element formation region YZ 1, as illustrated in FIG. 11A, on a surface of the substrate 2, inclined surfaces 2L and 2R each extending in the V-axis direction may be formed. The direction of the V axis may form an angle θ 2 with the direction of the Y axis. The inclined surfaces 2L and 2R may both be inclined with respect to the X-Y plane. The inclined surface 2L and the inclined surface 2R may also be inclined to each other. A plurality of magnetoresistive films MRL 1 and a plurality of magnetoresistive films MRR 1 each extending in the V-axis direction may be formed on the inclined surface 2L and the inclined surface 2R, respectively. The plurality of magnetoresistive films MRL 1 may be coupled in series to each other to form magnetoresistive effect element 21. The plurality of magnetoresistive films MRR 1 may be coupled in series to each other to form magnetoresistive effect element 31. Note that FIG. 11A illustrates the plurality of magnetoresistive films MRL 1 constituting the magnetoresistive effect element 21, the plurality of magnetoresistive films MRR 1 constituting the magnetoresistive effect element 31, and an upper wiring line pattern C 2UA disposed above and omits other components.The direction of the V axis may correspond to a specific but non-limiting example of a "first axis direction" according to an embodiment of the disclosure. The inclined surface 2L may correspond to a specific but non-limiting example of a "first surface" according to an embodiment of the disclosure. The inclined surface 2R may correspond to a specific but non-limiting example of a "second surface" according to an embodiment of the disclosure.FIG. 12 is a planar diagram for explaining a detailed configuration of the magnetoresistive effect elements 22 and 32 formed in the element formation region YZ 2. In the element formation region YZ 2, the inclined surfaces 2L and 2R each extending in the V-axis direction may also be formed on the surface of the substrate 2. The V-axis direction may form the angle θ 2 with the Y-axis direction. A plurality of magnetoresistive films MRL 2 and a plurality of magnetoresistive films MRR 2 each extending in the V-axis direction may be formed on the inclined surface 2L and the inclined surface 2R, respectively. The plurality of magnetoresistive films MRL 2 may be coupled in series to each other to form magnetoresistive effect element 22. The plurality of magnetoresistive films MRR 2 may be coupled in series to each other to form magnetoresistive effect element 32.FIG. 13 is a planar diagram for explaining a detailed configuration of the magnetoresistive effect elements 23 and 33 formed in the element formation region YZ 3. In the element formation region YZ 3, the inclined surfaces 2L and 2R each extending in the V-axis direction may also be formed on the surface of the substrate 2. The V-axis direction may form the angle θ 2 with the Y-axis direction. A plurality of magnetoresistive films MRL 3 and a plurality of magnetoresistive films MRR 3 each extending in the V-axis direction may be formed on the inclined surface 2L and the inclined surface 2R, respectively. The plurality of magnetoresistive films MRL 3 may be coupled in series to each other to form magnetoresistive effect element 23. The plurality of magnetoresistive films MRR 3 may be coupled in series to each other to form magnetoresistive effect element 33.FIG. 14 is a planar diagram for explaining a detailed configuration of the magnetoresistive effect elements 24 and 34 formed in the element formation region YZ 4. In the element formation region YZ 4, the inclined surfaces 2L and 2R each extending in the V-axis direction may also be formed on the surface of the substrate 2. The V-axis direction may form the angle θ 2 with the Y-axis direction. A plurality of magnetoresistive films MRL 4 and a plurality of magnetoresistive films MRR 4 each extending in the V-axis direction may be formed on the inclined surface 2L and the inclined surface 2R, respectively. The plurality of magnetoresistive films MRL 4 may be coupled in series to each other to form the magnetoresistive effect element 24. The plurality of magnetoresistive films MRR 4 may be coupled in series to each other to form magnetoresistive effect element 34.Note that the combination of the aforementioned magnetic field detection device 200 with a magnetic field detection unit (which is simply referred to as a magnetic field detection unit AR 1) configured to detect a change in a magnetic field in the X-axis direction makes it possible to implement a triaxial magnetic field detection compass that detects changes in a magnetic field in triaxial directions. The magnetic field detection unit AR 1 included herein may be a unit having substantially the same structure as the current current detection device 100 described in the above example embodiment except that the bus 5 is not provided.Moreover, the technology includes any possible combination of some or all of the various embodiments and the modifications described and incorporated herein.It is possible to achieve at least the following configurations from the above embodiments and modification examples of the disclosure.(1) A magnetic field detection device including:a magnetoresistive effect element including a magnetoresistive film extending in a first axis direction and including a first end part, a second end part, and an intermediate part between the first end part and the second end part; anda conductor having a first part and a second part each extending in a second axis direction inclined with respect to the first axis direction, the conductor being configured to be supplied with a current and thereby generate an induction magnetic field applied to the magnetoresistive film in a third axis direction orthogonal to the second axis direction,the first part and the second part respectively overlap the first end part and the second end part in a fourth axis direction orthogonal to both the second and third axis directions.(2) The magnetic field detection device according to (1), wherein an intensity of the induction magnetic field to be applied to the first end part and an intensity of the induction magnetic field to be applied to the second end part are higher than an intensity of the induction magnetic field to be applied to the intermediate part.(3) The magnetic field detection device according to (1) or (2), wherein the first part and the second part are coupled in parallel with each other.(4) The magnetic field detection device according to any one of (1) to (3), wherein the one of the conductors further includes:a plurality of third parts each extending in the second axis direction, the third parts being disposed opposite to the first part, the magnetoresistive effect element being disposed between the first part and the third parts in the fourth axis direction; anda plurality of fourth parts each extending in the second axis direction, the fourth parts being disposed opposite to the second part, the magnetoresistive effect element being disposed between the second part and the fourth parts in the fourth axis direction; andthe current is configured to flow through the first part and the second part in a first direction along the second axis direction, respectively, and to flow through the third part and the fourth part in a second direction opposite to the first direction, respectively.(5) The magnetic field detection device according to any one of (1) to (4), wherein the conductor includes a helical coil wound around the magnetoresistive effect element while extending in the direction of the third axis.(6) The magnetic field detection device according to (5), wherein a plurality of the magnetoresistive effect elements include a first magnetoresistive effect element and a second magnetoresistive effect element, and the helical coil includes:a first helical coil part wound around the first magnetoresistive effect element in a first winding direction while extending along the third axis direction; anda second helical coil part wound around the second magnetoresistive effect element in a second winding direction opposite to the first winding direction while extending along the third axis direction, the second helical coil part being connected in series with the first helical coil part.(7) The magnetic field detection device according to any one of (1) to (6), wherein the first end part and the second end part each include a first end and a second end of the magnetoresistive film that are opposite to each other in the first axis direction, the first part overlaps the first end in the first end part in the fourth axis direction, and the second part overlaps the second end in the second end part in the fourth axis direction.(8) The magnetic field detection device according to any one of (1) to (5), wherein a plurality of the magnetoresistive effect elements include a first magnetoresistive effect element including a first free magnetization layer and a second magnetoresistive effect element including a second free magnetization layer, and the conductor is configured to generate the induction magnetic field to cause magnetization of the first free magnetization layer and magnetization of the second free magnetization layer to be oriented in opposite directions.(9) A magnetic field detection device including: a first magnetoresistive effect element including a first magnetoresistive film extending in a first axis direction; a first conductor having a first part and a second part each extending in a second axis direction inclined with respect to the first axis direction and being adjacent to each other in a third axis direction that is different from both the first axis direction and the second axis direction; a second conductor having third and fourth parts each extending in the second axis direction and being adjacent to each other in the third axis direction; and a second magnetoresistive effect element including a second magnetoresistive film extending in the first axis direction, the first magnetoresistive film including a first end part, a second end part and a first intermediate part between the first end part and the second end part, the second magnetoresistive film includes a third end part, a fourth end part, and a second intermediate part between the third end part and the fourth end part, the first part and the second part of the first conductor respectively overlap the first end part and the second end part of the first magnetoresistive film in a fourth axis direction orthogonal to both the second axis direction and the third axis direction, and are each configured to be supplied with a first current and thereby generate a first induction magnetic field applied to the first end part and the second end part in the third axis direction, and the third part and the fourth part of the second conductor respectively overlap the third end part and the fourth end part of the second magnetoresistive film in the fourth axis direction, and are each configured to be supplied with a first current, supplying them with a second current, thereby generating a second induction magnetic field applied to the third end part and the fourth end part in the third axis direction.(10) The magnetic field detection device according to (9), further comprising a substrate having a first surface and a second surface, wherein the first surface is parallel to the first axis direction and inclined with respect to the second axis direction and the third axis direction, the second surface is parallel to the first axis direction and inclined with respect to the first surface, wherein the first magnetoresistive effect layer is provided on the first surface, and the second magnetoresistive film is provided on the second surface.(11) A current detection device including: a magnetoresistive effect element including a magnetoresistive film extending in a first axis direction and including a first end part, a second end part, and an intermediate part between the first end part and the second end part; a first conductor having a first part and a second part each extending in a second axis direction inclined with respect to the first axis direction, the first conductor being configured to be supplied with a first current and thereby generate a first induction magnetic field applied to the magnetoresistive film in a first direction along a third axis direction orthogonal to the second axis direction; a second conductor configured to be supplied with a second current and thereby generate a second induction magnetic field applied to the magnetoresistive film in a second direction opposite to the first direction, the first part and the second part respectively overlap the first end part and the second end part in a fourth axis direction orthogonal to both the second and third axis directions.(12) The current detection device according to (11), further including a controller configured to control a magnitude of the first current to generate the first induction magnetic field with an intensity that cancels out the second induction magnetic field.The magnetic field detection device according to at least one aspect of the disclosure provides high detection accuracy with small size.

Claims

A magnetic field detection device (100) comprising: a first magnetoresistive effect element (11, 14 or 21, 24, 31, 34) having a magnetoresistive film (MR1, MR2, MR3 or MR4 or MRL1, MRR1, MRL2, MRR2, MRL3, MRR3, MRL4 or MRR4) extending in a direction of a first axis (W axis or V axis), and a first end part (11A, 12A, 13A or 14A), a second end part (11B, 12B, 13B or 14B), and an intermediate part (11C, 12C, 13C or 14C) between the first end part (11A, 12A, 13A or 14A) and the second end part (11B, 12b, 13b or 14B); and a conductor (6 or 60) having a first part (61U or 61UB) and a second part (62A or 62UB) each extending in a direction of a second axis (Y axis) inclined with respect to the direction of the first axis (W axis or V axis), wherein the conductor is configured to apply an induction magnetic field (SF and RF) to the magnetoresistive film (MR1, MR2, MR3 or MR4 or MRL1, MRR1, MRL2, MRR2, MRR3, MRR3 when current passes through the conductor, mrl4 or MRR4) in a third axis direction (X axis) orthogonal to the second axis direction (Y axis), wherein the first part (61U or 61UB) overlaps the first end part (11A, 12A, 13A or 14A) in a fourth axis direction (Z axis) orthogonal to both the second axis direction (Y axis) and the third axis direction (X axis), and wherein the second part (62U or 62UB) overlaps the second end part (11B, 12B, 13B or 14B) in the fourth axis direction (Z axis), wherein the conductor (6 or 60) includes a helical coil, which is wound around the first magnetoresistive effect element (11 or 14) while extending along the third axis (X-axis) direction, the magnetic field detection device (100) having a second magnetoresistive effect element (12 or 13), the helical coil (6 or 60) comprising: a first helical coil part (6A) wound around the first magnetoresistive effect element (11 or 14) in a first winding direction (CD1) while the element extends along the third axis (X-axis) direction; and a second helical coil part (6B) wound around the second magnetoresistive effect element (12 or 13) in a second winding direction (CD2) opposite to the first winding direction (CD1) while the element extends along the direction of the third axis (X axis), the second helical coil part (6B) being connected in series with the first helical coil part (6A).The magnetic field detection device (100) according to claim 1, wherein the first magnetoresistive effect element (11, 14, 21, 24, 31, 34) is disposed with respect to the first part (61A or 61UB) and the second part (62U or 62UB) such that an intensity of the induction magnetic field (SF and RF) applied to the first end part (11A, 12A, 13A or 14A) and an intensity of the induction magnetic field (SF and RF) applied to the second end part (11B, 12B, 13B or 14B) is higher than an intensity of the induction magnetic field (SF and RF) applied to the intermediate part (11C, 12C, 13c or 14C).The magnetic field detection device (100) according to claim 1 or 2, wherein the first part (61U or 61UB) and the second part (62U or 62UB) are connected in parallel to the power supply.The magnetic field detection device (100) according to any one of claims 1 to 3, wherein the conductor (6 or 60) further comprises: a plurality of third parts (61LA, 62LA, 63LA, and 64LA or 61LB, 62LB, 63LB, and 64LB) each extending in the direction of the second axis (Y axis), the third parts being disposed opposite to the first part (61U or 61UB), wherein the first magnetoresistive effect element (11, 14) is disposed between the first part (61U or 61UB) and the third parts (61LA, 62LA, 63LA, and 64LA or 61LB, 62LB, 63lb and 64LB) are arranged in the direction of the fourth axis (Z axis); and a plurality of fourth parts (65LA, 66LA, 67LA and 68LA or 65LB, 66LB, 67LB and 68LB) respectively extending in the direction of the second axis (Y axis), the fourth parts being arranged opposite to the second part (62A or 62UB), wherein the first magnetoresistive effect element (11 or 14) is interposed between the second part (62U or 62UB) and the fourth parts (65LA, 66LA, 67LA and 68LA, or 65LB, 66LB, 67 lband 68LB) are arranged in the fourth axis (Z axis) direction, and the conductor is configured such that a current flows through each of the first parts (61U or 61UB) and the second parts (62U or 62UB) in a first direction along the second axis (Y axis) direction and flows through each of the third parts (61LA, 62LA, 63LA, and 64LA, or 61LB, 62B, 63LB, and 64LB) and the fourth parts (65LA, 66LA, 67LA, and 68LA, or 65LB, 66L, 67LB, and 68LB) in a second direction opposite to the first direction.The magnetic field detection device (100) according to any one of claims 1 to 4, wherein the first end part (11A, 12A, 13A, or 14A) includes a first end (11AT, 12AT, 13AT, or 14AT) of the magnetoresistive film (MR1, MR2, MR3, or MR4), the second end part (11B, 12B, 13B, or 14B) includes a second end (11BT, 12BT, 13BT, or 14BT) of the magnetoresistive film (MR1, MR2, MR3, or MR4), the first end (11AT, 12AT, 13AT, or 14AT), and the second end (11BT, 12BT, 13bt or 14EA) are opposed to each other in the direction of the first axis (W axis), the first part (61A or 61UB) overlaps the first end (11AT, 12AT, 13AT or 14AT) in the first end part (11A, 12A, 13A or 14A) in the direction of the fourth axis (Z axis), and the second part (62U or 62UB) overlaps the second end (11EA, 12BT, 13BT or 14EA) in the second end part (11B, 12B, 13B or 14B) in the direction of the fourth axis (Z axis).The magnetic field detection device (100) according to any one of claims 1 to 4, wherein the first magnetoresistive effect element (11 or 14) includes a first free magnetization layer (S13 or S43), wherein the magnetic field detection device (100) includes a second magnetoresistive effect element (12 or 13) including a second free magnetization layer (S23 or S33), and the conductor (6) is configured to generate the induction magnetic field (SF and RF) that causes a magnetization (JS13 or JS43) of the first free magnetization layer (S13 or S43) and a magnetization (JS23 or JS33) of the second free magnetization layer (S23 or S33) to be oriented in opposite directions.A magnetic field detection device (100 or 200) comprising: a first magnetoresistive effect element (11 or 14, 21 or 24 and 31 or 34) having a first magnetoresistive film (MR1 or MR4, MRL1 or MRL4 and MRR1 or MRR4) extending in a direction of a first axis (W axis or V axis); a first conductor (6 or 60) having a first part (61U or 61UB) and a second part (62A or 62UB) each extending in a second axis direction (Y axis) inclined with respect to the first axis direction (W axis or V axis) and being adjacent to each other in a third axis direction (X axis) different from both the first axis direction (W axis or V axis) and the second axis direction (Y axis); a second conductor (5) having a third part and a fourth part which extend in the second axis (Y axis) direction, respectively, and which are adjacent to each other in the third axis (X axis) direction; and a second magnetoresistive effect element (12 or 13, 22 or 23, and 32 or 33) having a second magnetoresistive film (MR2 or MR3, MRL2 or MRL3 and MRR2 or MRR3) which extends in the first axis (W axis or V axis) direction, wherein the first magnetoresistive film (MR1 or MR4, MRL1 or MRL4 and MRR1 or MRR4) has a first end part (11A or 14A), a second end portion (11B or 14B) and a first intermediate portion (11C or 14C) between the first end portion and the second end portion, the second magnetoresistive film (MR2 or MR3, MRL2 or MRL3 and MRR2 or MRR3) comprises a third end portion (12A or 13A), a fourth end portion (12B or 13B) and a second intermediate portion (12C or 13C) between the third end portion and the fourth end portion, the first portion (61A or 61UB) of the first conductor (6 or 60) comprises the first end portion (11A or 14A) of the first magnetoresistive film (MR1 or MR4, mrl1 or MRL4 and MRR1 or MRR4) overlap in a fourth axis direction (Z axis) orthogonal to both the second axis direction (Y axis) and the third axis direction (X axis), the second part (62A or 62UB) of the first conductor (6 or 60) overlaps the second end part (11B or 14B) of the first magnetoresistive film (MR1 or MR4, mrl1 or MRL4 and MRR1 or MRR4) are overlapped in the fourth axis direction (Z axis), and the first part (61U or 61UB) and the second part (62U or 62UB) of the first conductor (6 or 60) are each configured to be supplied with a first current and thereby generate a first induction magnetic field (SF and RF) applied to the first end part (11A or 14A) and the second end part (11B or 14B) in the third axis direction (X axis), and the third part of the second conductor (5) generates the third end part (12A or 13A) of the second magnetoresistive film (MR2 or MR3, mrl2 or MRL4 and MRR2 or MRR4) overlap in the fourth axis (Z axis) direction, the fourth part of the second conductor (5) overlaps the fourth end part (12B or 13B) of the second magnetoresistive film (MR2 or MR3, MRL2 or MRL4 and MRR2 or MRR4) in the fourth axis (Z axis) direction, and the third part and the fourth part of the second conductor (5) are each configured to be supplied with a second current and thereby generate a second induction magnetic field, applying to the third end part (12A or 13A) and the fourth end part (12B or 13B) in the third axis (X axis) direction, the conductor (6 or 60) having a helical coil wound around the first magnetoresistive effect element (11 or 14) while extending along the third axis (X axis) direction, the magnetic field detection device (100) having a second magnetoresistive effect element (12 or 13), the helical coil (6 or 60) comprising: a first helical coil part (6A) wound around the first magnetoresistive effect element (11 or 14) in a first winding direction (CD1) while the element extends along the third axis (X axis) direction; and a second helical coil part (6B) wound around the second magnetoresistive effect element (12 or 13) in a second winding direction (CD2) opposite to the first winding direction (CD1) while the element extends along the direction of the third axis (X axis), the second helical coil part (6B) being connected in series with the first helical coil part (6A).The magnetic field detection device (200) according to claim 7, further comprising a substrate (2) on the surface of which a first surface region (2L) and a second surface region (2R) are formed, the first surface region (2L) being parallel to the direction of the first axis (V axis) and being inclined with respect to the direction of the second axis (Y axis) and the direction of the third axis (X axis), the second surface region (2R) being parallel to the direction of the first axis (V axis) and being inclined with respect to the first surface region (2L), wherein the first magnetoresistive film (MRL1 or MRL3 and MRR1 or MRR3) is provided on the first surface region (2L), and the second magnetoresistive film (MRL2 or MRL4 and MRR2 or MRR4) is provided on the second surface region (2R).A current sensing device (100) comprising: a first magnetoresistive effect element (11, 12, 13 or 14) having a magnetoresistive film (MR1, MR2, MR3 or MR4) extending in a direction of a first axis (W axis) and having a first end portion (11A, 12A), 13A or 14A), a second end portion (11B, 12B, 13B or 14B), and an intermediate portion (11C, 12C, 13C or 14C) between the first end portion (11A, 12A, 13A or 14A) and the second end portion (11B, 12B, 13B or 14B); a first conductor (6 or 60) having a first part (61U or 61UB) and a second part (62A or 62UB) each extending in a second axis (Y axis) direction inclined with respect to the first axis (W axis) direction, the first conductor (6) being configured to be supplied with a first current and thereby configured to generate a first induction magnetic field (SF and RF) applied to the magnetoresistive film (MR1, MR2, MR3 or MR4) in a first direction along a third axis (X axis) direction orthogonal to the second axis (Y axis) direction; and a second conductor (5) configured to:, in that it is supplied with a second current and thereby generates a second induction magnetic field that is applied to the magnetoresistive film (MR 1, MR 2, MR 3, or MR 4) in a second direction opposite to the first direction, the first part (61A or 61UB) overlapping the first end part (11A, 12A, 13A, or 14A) in a fourth axis direction (Z axis) that is orthogonal to both the second axis direction (Y axis) and the third axis direction (X axis), the second part (62U or 62UB) overlapping the second end part (11B, 12B, 13B, or 14B) in a fourth axis direction (Z axis), wherein the conductor (6 or 60) has a helical coil wound around the first magnetoresistive effect element (11 or 14) while extending along the third axis (X-axis) direction, the magnetic field detection device (100) having a second magnetoresistive effect element (12 or 13), the helical coil (6 or 60) comprising: a first helical coil part (6A) wound around the first magnetoresistive effect element (11 or 14) in a first winding direction (CD1) while the element extends along the third axis (X-axis) direction; and a second helical coil part (6B) wound around the second magnetoresistive effect element (12 or 13) in a second winding direction (CD2) opposite to the first winding direction (CD1) while the element extends along the direction of the third axis (X axis), the second helical coil part (6B) being connected in series with the first helical coil part (6A).The current sensing device (100) of claim 9, further comprising a controller (70) configured to control a magnitude of the first current to generate the first induction magnetic field (SF and RF) with an intensity cancelling the second induction magnetic field.

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