Semiconductor device and method for manufacturing the semiconductor device

Abstract

Semiconductor device (100), exhibiting: - a substrate (14); - a resin casing (50) which surrounds a region directly above the substrate (14) in a planar view; - a semiconductor chip (18) which is provided in the region; and - an electrode (70) which has a first section (71) that is pulled out from an upper surface (52) of the resin housing (50) and a second section (72) that is provided below the upper surface (52) of the resin housing (50) and is to be inserted into the resin housing (50), and which is electrically connected to the semiconductor chip (18), where: - a first indentation (74) is formed above the first section (71) to the second section (72) in the electrode (70), - a first groove (54) is formed to expose a section which is formed in the second section (72) in the first indentation (74) on the upper surface (52) of the resin housing (50), - the first section (71) extends along the upper surface (52) of the resin casing (50) and - the first indentation (74) is designed in such a way that it increases a creepage distance between an adjacent conductive component (95) and the electrode (70).

Description

Background of the invention: Area

[0001] The present invention relates to a semiconductor device and a method for manufacturing the semiconductor device. background

[0002] JP 2009-277 959 A discloses a semiconductor device capable of preventing resin burrs from adhering to an external electrode. In the semiconductor device, an IGBT and an external electrode are electrically connected. A housing seals the IGBT such that a portion of the external electrode extends from it. The external electrode has a through-hole at the origin of the section extending from the housing. At least a portion of the through-hole is filled with a thermoplastic resin that forms the housing.

[0003] In a semiconductor device such as in JP 2009-277 959 A, if the external electrode has a notch, resin enters the notch when a resin housing is formed, so that a resin burr may occur.

[0004] US Patent 5,763,946 A relates to a semiconductor device with bent electrode leads. A housing has a top opening, several semiconductor elements, and electrode leads connected to the semiconductor elements. A cover element closing the opening has through-holes extending from the bottom to the top. The cover element is connected to the housing by inserting the electrode leads through the holes so that they protrude vertically from the top and then bending them over. The cover element has projections adjacent to the holes. Each of the vertically protruding electrode leads is bent more than 90° over a corresponding projection, with its bent corner portion resting on the edge of the projection and being held parallel to the top of the cover element by a spring-back effect.

[0005] JP H11-345 669 A discloses a molded part that reliably prevents a base part from breaking when an electrical conductor is bent. The proposed molded part includes an electrical conductor or busbar and is manufactured by pressing or inserting a portion of the conductive metal conductor into a resin base part. The base part 22 incorporates an insertion groove for a bending device to expose the electrical conductor pressed into a side wall. Summary

[0006] The present invention was made to solve the problem described above, and it aims to provide a semiconductor device capable of preventing resin burrs and a method for manufacturing them.

[0007] The features and advantages of the present invention can be summarized as follows.

[0008] The problem underlying the invention is solved according to the invention in a semiconductor device by the features of claim 1 and in a method for manufacturing a semiconductor device by the features of claim 9. Advantageous embodiments are the subject of the respective dependent claims.

[0009] According to a first aspect of the present disclosure, a semiconductor device comprises a substrate, a resin surrounding a region directly above the substrate in a planar view, a semiconductor chip provided in the region, and an electrode having a first section extending from an upper surface of the resin housing and a second section provided below the upper surface of the resin housing and to be inserted into the resin housing, and which is electrically connected to the semiconductor chip, wherein a first indentation is formed in the electrode above the first section extending to the second section, and wherein a first groove is formed in the first indentation on the upper surface of the resin housing to expose a section formed in the second section. According to the invention, the first section extends along the upper surface of the resin housing.The first indentation is designed in such a way that it increases the creepage distance between an adjacent conductive component and the electrode.

[0010] According to one aspect of the present invention, a method for producing a semiconductor device designed according to the invention comprises inserting an electrode, in which a notch is formed, into a metal mold such that part of the electrode is arranged in a space in the metal mold and that the notch is not arranged in the space, forming a resin housing into which the electrode is inserted by pouring resin into the space while the electrode is inserted in the metal mold, arranging the resin housing to surround a region directly above a substrate in a planar view, and arranging the semiconductor chip in the region.

[0011] Other and further tasks, features and advantages of the invention will become clearer from the following description. Brief description of the characters Fig. Figure 1 is a cross-sectional view of a semiconductor device according to a first embodiment. Fig. Figure 2 is a perspective view illustrating the respective structures of the electrode and the resin housing according to the first embodiment. Fig. Figure 3 is a perspective view illustrating the electrode and resin housing according to the first embodiment as seen from a different angle. Fig. Figure 4 is a top view illustrating the respective structures of the electrode and the resin housing according to the first embodiment. Fig. Figure 5 is a diagram illustrating a condition in which a nut is attached to the resin housing according to the first embodiment. Fig. Figure 6 is a perspective view illustrating a state in which the electrode is folded according to the first embodiment. Fig. Figure 7 is a perspective view illustrating the state in which the electrode is folded according to the first embodiment, as seen from a different angle. Fig. Figure 8 is a top view illustrating a state in which the electrode is folded according to the first embodiment. Fig. 9, Fig. 10, Fig. 11, Fig. 12 to Fig. Figure 13 are diagrams, each illustrating the method for manufacturing the semiconductor device according to the first embodiment. Fig. Figure 14 is a perspective view illustrating the respective structures of an electrode and a resin housing according to a comparative example. Fig. Figure 15 is a perspective view illustrating a state in which the electrode is folded according to the comparison example. Fig. Figure 16 is a perspective view illustrating a state in which the resin burr in a semiconductor device according to the comparison example has been removed. Fig. Figure 17 is a perspective view illustrating a creepage distance between the electrode and a conductive component according to the comparison example. Fig. Figure 18 is a top view illustrating the creepage distance between the electrode and the conductive component according to the comparative example. Fig. Figure 19 is a perspective view illustrating a creepage distance between the electrode and a conductive component according to the first embodiment. Fig. Figure 20 is a top view illustrating the creepage distance between the electrode and the conductive component according to the first embodiment. Fig. Figure 21 is a diagram illustrating the width of the electrode according to the first embodiment. Fig. Figure 22 is a top view illustrating the respective structures of an electrode and a resin housing according to a second embodiment. Fig. Figure 23 is a cross-sectional view illustrating the respective structures of the electrode and the resin housing according to the second embodiment. Fig. Figure 24 is a top view illustrating the respective structures of an electrode and a resin housing according to a third embodiment. Fig. Figure 25 is a cross-sectional view illustrating the respective structures of an electrode and a resin housing according to a fourth embodiment. Description of the embodiments

[0012] Semiconductor devices and methods for manufacturing the semiconductor devices according to embodiments of the present invention are described with reference to the accompanying figures. Components that are identical or correspond to each other are identified by the same reference numerals, and their repeated description is omitted in some cases. First embodiment.

[0013] Fig. Figure 1 is a cross-sectional view of a semiconductor device 100 according to a first embodiment. The semiconductor device 100 has a base plate 10 and an insulating substrate 14, which is connected to an upper surface of the base plate 10 by means of a connecting material 12. The insulating substrate 14 has a conductive layer 14a, an insulating layer 14b which is provided on the conductive layer 14a, and a circuit pattern 14c which is provided on the insulating layer 14b. A semiconductor chip 18 is connected to the circuit pattern 14c by means of a connecting material 16.

[0014] The semiconductor device 100 has a resin housing 50 which surrounds a region directly above the base plate 10 or the insulating substrate 14 in a planar view. The semiconductor chip 18 is provided in the region directly above the base plate 10 or the insulating substrate 14. The region directly above the base plate 10 or the insulating substrate 14 is sealed by means of a sealing material 22. A cover 24 is provided on the sealing material 22.

[0015] Electrodes 70 and 80 are inserted into the resin housing 50. The resin housing 50 is also referred to as the insert housing. Electrodes 70 and 80 are electrically connected to the semiconductor chip 18 or the circuit pattern 14c via a wire 20.

[0016] The electrode 70 has a first section 71 and a second section 72. The first section 71 is a section that extends from an upper surface 52 of the resin housing 50. The second section 72 is a section that is provided below the upper surface 52 of the resin housing 50 and is to be inserted into the resin housing 50. The second section 72 extends downwards. In the present embodiment, a lower end of the second section 72 is connected to the semiconductor chip 18 via the wire 20.

[0017] Fig. Figure 2 is a perspective view illustrating the respective structures of the electrode 70 and the resin housing 50 according to the first embodiment. Fig. Figure 3 is a perspective view illustrating the electrode 70 and the resin housing 50 according to the first embodiment as seen from a different angle. Fig. Figure 4 is a top view illustrating the respective structures of the electrode 70 and the resin housing 50 according to the first embodiment. The electrode 70, for example, has a flat plate shape. A notch 74 is formed in the electrode 70 from the first section 71 to the second section 72. The notch 74 notches one side of the electrode 70.

[0018] A groove 54 is formed on the upper surface 52 of the resin housing 50 to expose a section formed in the second section 72 in the notch 74. As shown in Fig. As illustrated in Figure 4 as a hatched area, the groove 54 is designed such that it covers a section in which the indentation 74 is formed in the electrode 70 in a planar view. A bottom section of the groove 54 is provided below the indentation 74. The groove 54 exposes an upper surface 72a of the second section 72, which forms the indentation 74. That is, the groove 54 exposes the entire indentation 74 from the resin housing 50.

[0019] Fig. Figure 5 is a diagram illustrating a state in which a nut 90 is attached to the resin housing 50 according to the first embodiment. A recess for receiving the nut 90 is formed on the upper surface 52 of the resin housing 50.

[0020] Fig. Figure 6 is a perspective view illustrating a state in which the electrode 70 is folded according to the first embodiment. Fig. Figure 7 is a perspective view illustrating the state in which the electrode 70 is folded according to the first embodiment, as seen from a different angle. Fig. Figure 8 is a top view illustrating the state in which the electrode 70 is folded according to the first embodiment. The first section 71 extends along the upper surface 52 of the resin housing 50, with the electrode 70 folded. At this point, a hole of the groove 90 and a through-hole formed in the first section 71 overlap. The electrode 70 has a bent section 76 which connects the first section 71 and the second section 72.

[0021] A method for manufacturing the semiconductor device 100 is then described. Fig. 9 and Fig. Figure 13 are diagrams, each illustrating the process for manufacturing the semiconductor device 100 according to the first embodiment. First, as in Fig. Figure 9 illustrates the preparation of a metal mold (step 1). The metal mold has an upper metal form 91 and a lower metal form 92. The metal mold is a mold for demolding resin and is made, for example, of a metal. The metal mold can be made of a material other than a metal.

[0022] Then, as in Fig. As illustrated in Figure 10, an electrode 70 is inserted into the metal mold (step 2). Then, as shown in Figure 10, an electrode 70 is inserted into the metal mold. Fig. As illustrated in Figure 11, the metal mold is closed (step 3). Consequently, a chamber 93 is formed, which is covered by the upper metal mold 91 and the lower metal mold 92. Part of the electrode 70 is located in the chamber 93 within the metal mold, and the indentation 74 is not located in the chamber 93. The indentation 74 is provided above the chamber 93. Subsequently, as shown in Fig. As illustrated in Figure 12, a resin 51 is poured into chamber 93 while the electrode 70 is inserted into the metal mold (step 4). Consequently, as shown in Figure 12, a resin 51 is poured into chamber 93 while the electrode 70 is inserted into the metal mold. Fig. Figure 13 illustrates the resin housing 50, into which the electrode 70 is inserted (step 5). Although the electrode 70 has been described as an example, the electrode 80 can be inserted into the metal mold in step 2.

[0023] The resin housing 50 is then positioned such that it surrounds a region directly above the insulating substrate 14 in a planar view. The semiconductor chip 18 is positioned in the region directly above the insulating substrate 14. The connection is then made via the wire 20, and the interior of the resin housing 50 is sealed using the sealing material 22. The lid 24 is placed on the sealing material 22.

[0024] Fig. Figure 14 is a perspective view illustrating the respective structures of an electrode 70 and a resin housing 150 according to a comparative example. Fig. Figure 15 is a perspective view illustrating a state in which the electrode 70 is folded according to the comparative example. A groove 54 is not formed in the resin housing 150 according to the comparative example. In such a configuration, resin 51a can enter a notch 74 in the electrode 70 when the resin housing 150 is formed. The resin 51a remains even after the electrode 70 has been bent, resulting in a resin burr. Accordingly, the resin burr must be removed. Fig. Figure 16 is a perspective view illustrating a state in which a resin burr has been removed from a semiconductor device according to the comparison example.

[0025] On the other hand, the groove 54 is formed on the upper surface 52 of the resin housing 50 to expose the section formed in the second section 72 in the indentation 74 in the electrode 70. This configuration allows the metal mold to be positioned around the indentation 74 when the resin housing 50 is formed, preventing resin from entering the indentation 74. This prevents the formation of a resin burr. In the method for manufacturing the semiconductor device 100 according to the present embodiment, the indentation 74 in the electrode 70 is not located in the space 93 in the metal mold into which the resin 51 is poured. Accordingly, it is possible to prevent the resin 51 from entering the indentation 74. Therefore, the resin burr can be prevented. As a result, the step for removing the resin burr can be omitted, and the manufacturing costs of the resin housing 50 can be reduced.

[0026] In the present embodiment, the notch 74 in the electrode 70 is exposed to the resin housing 50. Accordingly, it can be verified whether the electrode 70 is positioned correctly or not. The resin housing 50 can be formed using a general method for manufacturing the insert housing. Therefore, the need for new equipment for manufacturing the resin housing 50 can be avoided.

[0027] Fig. Figure 17 is a perspective view illustrating a creepage distance d1 between the electrode 70 and a conductive component 95 according to the comparative example. Fig. Figure 18 is a top view illustrating the creepage distance d1 between the electrode 70 and the conductive component 95 according to the comparative example. The conductive component 95 is, for example, a product fastening screw for attaching a semiconductor device 100 to a product. The notch 74 in the electrode 70 is designed to ensure a suitable creepage distance d1 from an adjacent conductive component 95. That is, the notch 74 in the electrode 70 is designed to increase the creepage distance d1 between the adjacent conductive component 95 and the electrode 70.

[0028] Fig. Figure 19 is a perspective view illustrating a creepage distance d2 between the electrode 70 and a conductive component 95 according to the first embodiment. Fig. Figure 20 is a top view illustrating the creepage distance d2 between the electrode 70 and the conductive component 95 according to the first embodiment. In the present embodiment, the groove 54 is formed in the resin housing 50. Accordingly, the creepage distance d2 between the electrode 70 and the conductive component 95 can be larger than the creepage distance d1 in the comparative example.

[0029] Fig. Figure 21 is a diagram illustrating the width W1 of the electrode 70 according to the first embodiment. In the present embodiment, the creepage distance d2 between the electrode 70 and the conductive component 95 can be kept large, as described above. Thus, the width W1 of the electrode 70 can be increased. Consequently, the electrode 70 can dissipate heat easily, and the generation of heat by the electrode 70 during product use can be reduced.

[0030] The semiconductor device 100 according to the present embodiment can be used in all situations, such as energy generation, energy transmission, and efficient energy use or reproduction. The semiconductor chip 18 can, for example, be an IGBT (insulated-gate bipolar transistor) or a diode. The number of semiconductor chips 18 contained in the semiconductor device 100 is not limited. The structure of the semiconductor device 100 is not limited to what is shown in Fig. Figure 1 illustrates this. For example, the semiconductor chip 18 and the electrodes 70 and 80 can be directly connected to each other without the wire 20.

[0031] The semiconductor chip 18 is, for example, made of silicon or a wide-bandgap semiconductor. Examples of wide-bandgap semiconductors include silicon carbide, a gallium nitride-based material, or diamond. When the semiconductor chip 18 is made of a wide-bandgap semiconductor, a high current density is assumed. In the present embodiment, the width of the electrode 70 is increased, which reduces heat generation even when the current density of the semiconductor chip 18 is high.

[0032] These modifications can be appropriately applied to semiconductor devices and methods for manufacturing semiconductor devices according to the following embodiments. Meanwhile, the main differences between the semiconductor devices and methods for manufacturing semiconductor devices according to the following embodiments and the first embodiment are explained, as they exhibit numerous similarities to the first embodiment. Second embodiment.

[0033] Fig. Figure 22 is a top view illustrating the respective structures of an electrode 70 and a resin housing 250 according to a second embodiment. Fig. Figure 23 is a cross-sectional view illustrating the respective structures of the electrode 70 and the resin housing 250 according to the second embodiment. In the present embodiment, the structure of a groove formed on an upper surface 52 of the resin housing 250 differs from that in the first embodiment. Other structures are similar to those in the first embodiment.

[0034] In addition to a groove 54, a groove 256 is formed on the upper surface 52 of the resin housing 250. The groove 256 exposes a section on the opposite side of a section in which a notch 74 is formed in the electrode 70 in a width direction. The groove 256 also exposes a section on the side of another adjacent electrode 70. That is, the grooves 54 and 256 are each formed to provide access to both sides of the electrode 70 on the upper surface 52 of the resin housing 250.

[0035] As in Fig. As illustrated in Figure 23, a creepage distance d4 between adjacent electrodes 70 is longer in a case where the slots 256 exist than a creepage distance d3 between adjacent electrodes 70 in a case where the slots 256 do not exist. Accordingly, the width W1 of the electrode 70 can be further increased, and the generation of heat by the electrode 70 during product use can be reduced. Third embodiment.

[0036] Fig. Figure 24 is a top view illustrating the respective structures of an electrode 70 and a resin housing 50 according to a third embodiment. In the present embodiment, in a lateral direction of the electrode 70, a length W3 of a section covered by the resin housing 50 corresponds, in a bending section 76, to half or more of a width W2 of the bending section 76. Consequently, when the resin housing 50 is manufactured, the bending process of the electrode 70 can be simplified. A stress acting on the resin housing 50 can be prevented when the electrode 70 is bent. Fourth embodiment.

[0037] Fig.Figure 25 is a cross-sectional view illustrating the respective structures of an electrode 470 and a resin housing 50 according to a fourth embodiment. In the present embodiment, the structure of the electrode 470 differs from that in the first embodiment. Other structures are similar to those in the first embodiment. In addition, a notch 478 is formed within the bending section 76 in the electrode, in addition to a notch 74. The notch 478 is also referred to as an embossing. If the notch 478 has been formed in the electrode 470 beforehand, the bending process of the electrode 470 can be easily carried out. When the electrode 470 is bent, a stress acting on the resin housing 50 can be prevented.

[0038] Meanwhile, the technical features described in each embodiment can be combined in a suitable manner for use.

[0039] In the semiconductor device according to the present invention, the first groove is formed on the upper surface of the resin housing to expose the section formed in the second section at the first notch in the electrode. This configuration makes it possible to arrange a metal mold around the first notch when the resin housing is formed and to prevent resin from entering the first notch. This prevents the formation of a resin burr.

[0040] In the methods for manufacturing the semiconductor device according to the present invention, the indentation of the electrode is not located in the space in the metal mold into which the resin is poured. Accordingly, it is possible to prevent the resin from entering the indentation. This prevents the formation of a resin burr.

Claims

[1] Semiconductor device (100), exhibiting: - a substrate (14); - a resin casing (50) which surrounds a region directly above the substrate (14) in a planar view; - a semiconductor chip (18) which is provided in the region; and - an electrode (70) which has a first section (71) that is pulled out from an upper surface (52) of the resin housing (50) and a second section (72) that is provided below the upper surface (52) of the resin housing (50) and is to be inserted into the resin housing (50), and which is electrically connected to the semiconductor chip (18), where: - a first indentation (74) is formed above the first section (71) to the second section (72) in the electrode (70), - a first groove (54) is formed to expose a section which is formed in the second section (72) in the first indentation (74) on the upper surface (52) of the resin housing (50), - the first section (71) extends along the upper surface (52) of the resin casing (50) and - the first indentation (74) is designed in such a way that it increases a creepage distance between an adjacent conductive component (95) and the electrode (70). [2] Semiconductor device (100) according to claim 1, wherein the first groove (54) exposes an upper surface (72a) of the second section (72) which forms the first indentation (74). [3] Semiconductor device (100) according to one of the preceding claims, wherein a second groove (256) which exposes a section on the opposite side of a section in which the first notch (74) is formed in a width direction of the electrode (70) is formed in the electrode (70) on the upper surface (52) of the resin housing (250). [4] Semiconductor device (100) according to one of claims 1 and 2, wherein a groove (256) is formed to expose a section on the side of another adjacent electrode (70) in the electrode (70) on the upper surface (52) of the resin housing (250). [5] Semiconductor device (100) according to any one of the preceding claims, wherein: - the first section (71) extends along the upper surface (52) of the resin casing (50), - the second section (72) is inserted into the resin housing (50) in such a way that it extends downwards, - the electrode (70) has a bending section (76) which connects the first section (71) and the second section (72), and - a length of a section which is covered by the resin housing (50) in the bending section (76) corresponds to half or more of a length of the bending section (76) in the width direction of the electrode (70). [6] Semiconductor device (100) according to any one of the preceding claims, wherein: - the first section (71) extends along the upper surface (52) of the resin casing (50), - the second section (72) is inserted into the resin housing (50) in such a way that it extends downwards, - the electrode (470) has a bending section (76) which connects the first section (71) and the second section (72), and - a second indentation (478) is formed within the bending section (76) in the electrode (470). [7] Semiconductor device (100) according to one of the preceding claims, wherein the semiconductor chip (18) is formed by means of a semiconductor with a wide band gap. [8] Semiconductor device (100) according to claim 7, wherein the wide bandgap semiconductor is silicon carbide, a gallium nitride-based material or diamond. [9] Method for manufacturing a semiconductor device (100), wherein: - the semiconductor device (100) is designed according to one of the preceding claims and - the procedure exhibits: - Inserting an electrode (70) in which a notch (74) is formed into a metal form (91, 92) such that part of the electrode (70) is arranged in a space (93) in the metal form (91, 92) and the notch (74) is not arranged in the space (93); - Forming a resin housing (50) into which the electrode (70) is inserted by filling resin (51) into the space (93) while the electrode (70) is inserted into the metal form (91, 92); - Arranging the resin casing (50) to surround a region directly above a substrate (14) in a planar view; and - Arranging a semiconductor chip (18) in the region.

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