Hybrid metal oxide-semiconductor capacitor with improved phase matching

Abstract

An optical device (200, 300) comprising the following: a substrate (201,301); a heterogeneous metal oxide semiconductor MOS capacitor formed on the substrate, wherein the MOS capacitor comprises: an optical fiber (202, 302); a first cathode (204, 304) comprising a first material in which an optical waveguide is formed; an anode (206, 306) formed in the optical waveguide, the anode comprising a second material that differs from the first material; and a dielectric (218, 318) arranged between the first cathode and the anode, wherein the dielectric comprises an oxide of the first material and an oxide of the second material, where the heterogeneous MOS capacitor is defined between the anode and the first cathode; and a semiconductor component layer that is arranged between the substrate and the heterogeneous MOS capacitor and is formed in the optical waveguide, characterized by the fact that the optical waveguide (202, 302) comprises a first region and a second region that define a pn junction diode formed in the optical waveguide (202, 302).

Description

background

[0001] Optical transmitters use optical modulators to modulate optical carriers (light beams) with analog or digital signals for transmission through optical fibers. A typical optical transmitter based on wavelength division multiplexing uses multiple lasers, each operating at a different wavelength, to generate several different optical carriers. Each carrier passes through its own optical modulator, where it is modulated with a signal to be transmitted. The modulated carriers are then fed into an optical fiber via an optical multiplexer for transmission.

[0002] An example of a silicon-based optical modulator comprises a metal-oxide-semiconductor (MOS) capacitor adjacent to a silicon optical waveguide. A signal applied to the capacitor causes a charge to accumulate near its center. This charge accumulation alters the refractive index of the optical waveguide and its propagation loss. The change in refractive index causes a phase shift in a light beam propagating through the waveguide, thus phase modulating the light. When this phase shift is utilized in optical waveguide components such as Mach-Zehnder interferometers (MZI), ring resonators, or Fabry-Perot resonators (FP), the component converts the optical phase shift into an optical power change to achieve optical intensity modulation.

[0003] If analog or constant optical power reduction is desired, the optical modulator can be used as an optical attenuator instead of encoding an electrical signal into an optical signal.

[0004] Examples of optical devices are disclosed in documents US 9 612 503 B2 and US 2015 / 0 365 169 A1.

[0005] The invention is defined by independent claims 1 and 2; embodiments of the invention are the subject of dependent claims. Brief description of the drawings

[0006] The present revelation is described in detail according to one or more different examples with reference to the following figures. The figures and the description referring to them serve for illustration. The Fig. 1A and Fig. Figure 1B shows an example of a hybrid metal-oxide-semiconductor (MOS) ring resonator as an optical modulator. Fig. 1C shows simulated relationships between the optical modulator of the Fig. 1A and Fig. 1B applied voltage for different cathode materials, plotted against the change in modal refractive index and the change in FCA. Fig. Figure 2 shows an example of an optical device according to the implementations disclosed herein. Fig. Figure 3 shows a top view of an exemplary optical device according to the implementations disclosed herein. Fig. Figure 4 shows an example of an optical device not covered by the wording of the claims, which is integrated with a resistance element according to an implementation disclosed herein. Fig. Figure 5 shows an example of an optical device integrated with a positive-intrinsic-negative (PIN) junction diode element according to an implementation disclosed herein. Fig. Figure 6 shows an example of an optical device integrated with a positive-negative (PN) junction diode element according to an implementation disclosed herein. Fig. Figure 7 is a schematic representation of an exemplary optical device according to the implementations disclosed herein. Fig. Figure 8 is an example of a computer system that can be used to implement various features of the different optical devices of the present disclosure.

[0007] The figures are not exhaustive and do not limit the present revelation to the exact form that is revealed. Detailed description

[0008] Several examples described herein involve optical modulators that employ a heterogeneous MOS capacitor (MOSCAP) connected to an optical waveguide. Applying a bias voltage can induce charge accumulation and / or depletion in the MOSCAP. This accumulation and / or depletion alters the refractive index of the optical waveguide, causing a phase shift in a light beam propagating through the waveguide, thus phase-modulating the light beam. However, the phase shift induced in conventional MOSCAP designs is weak and inefficient. For example, the phase shift is weak because it relies on either carrier accumulation or carrier depletion, meaning that the phase shift depends on the presence or absence of carriers, which can be weak.

[0009] Accordingly, the present examples offer improved phase-shifting properties and thus improved efficiency in phase modulation. For example, these implementations provide an optical device in which a thin interfacial oxide (e.g., a dielectric material) is positioned between two dissimilar semiconductors (e.g., a cathode and an anode), forming a heterogeneous MOSCAP (referred to here as a heterogeneous or hybrid MOSCAP). In various examples, the dissimilar semiconductors include a first semiconductor made of a Group III-V material and a second semiconductor made of silicon, another Group IV material (e.g., germanium, silicon carbide, silicon germanium, etc.), or any semiconductor material exhibiting electrical conductivity and optical transparency.

[0010] The two semiconductors can be located in and on opposite sides of an optical waveguide.

[0011] The depletion or accumulation of charges within the capacitor (e.g., within the optical waveguide) alters the local refractive index of the optical waveguide by changing the density of free charge carriers. According to the implementations disclosed herein, the effect is enhanced by integrating a semiconductor device (e.g., a resistor, a PIN or PN junction diode) into the optical waveguide in combination with the MOSCAP. In some examples, the optical devices disclosed herein also integrate a light-emitting component into the optical device. The light-emitting component, e.g., a laser or another light-emitting diode, can be formed on the MOSCAP and adapted to generate light that can be injected into the optical waveguide.The injected light can then be phase-shifted and modulated based on changes in the local refractive index of the waveguide caused by charge accumulation and / or depletion within the MOSCAP.

[0012] Accordingly, the present disclosure provides various configurations for improving the phase-tuning efficiency of a hybrid MOSCAP microring laser. The improved phase-tuning efficiency leads to broader wavelength shifts, which can be used for direct high-speed modulation and / or alignment with resonator-based modulators. The MOSCAP structure itself, consisting of a thin dielectric layer between two semiconductor layers, exhibits low phase tuning due to plasma dispersion or charge carrier dispersion, which occur depending on the polarity. This phase tuning can be enhanced by heat, charge carrier injection, or additional plasma dispersion by independently and simultaneously biasing the integrated silicon device, which is integrated into the optical waveguide, for example, as a resistor, PN junction diode, or PIN junction diode.

[0013] Accordingly, the implementations disclosed here offer structures that improve the phase-shift efficiency of microring lasers and / or optical modulators according to the current state of the art. Furthermore, the implementations described here utilize a plurality of separate electrical contacts (also referred to here as electrodes) that can be independently biased to achieve not only a larger phase-shift range but also more complex functionality for tuning functions, for example, by independently biasing each electrical node.

[0014] The optical devices disclosed here can improve the phase shift and modulation used, for example, by photonic integrated circuits (PICs) for dense wavelength division multiplexing (DWDM), which implement a DWDM system, such as a transceiver. DWDM is an optical multiplexing technology used to increase bandwidth in existing fiber optic networks. The DWDM PIC architecture comprises photonic components fully integrated on a single manufacturing platform. Many optical components on the PIC can be implemented with higher performance and a smaller footprint by using the implementations disclosed here, which provide improved efficiency in phase shift and modulation.

[0015] It should be noted that the terms "optimize," "optimal," "improve," "increase," and the like, used here, can be interpreted as meaning to make or achieve performance as effective or perfect as possible. However, as any professional reading this document will recognize, perfection cannot always be achieved. Accordingly, these terms can also mean making or achieving performance as good or effective as possible or practical under the given circumstances, or making or achieving performance better than that which can be achieved with other settings or parameters.

[0016] The Fig. 1A and Fig. Figure 1B shows an exemplary optical hybrid MOS ring resonator modulator 100. Fig. 1A is a perspective view of the optical modulator 100 and Fig. 1B is a sectional view of the optical hybrid MOS modulator 100 along a path in Fig. 1A shown line A-A'.

[0017] The optical modulator 100 comprises an optical waveguide 102, a cathode 104, which consists of a first material and is formed within the optical waveguide 102, and an anode 106, which consists of a second material different from the first and is formed within the optical waveguide 102. The anode is adjacent to the cathode. A capacitor is defined between the anode and the cathode.

[0018] In some examples, a substrate 101 consists of oxide grown on an underlying layer 108. A silicon layer 110 is formed on the substrate 101. A groove 112 separates the optical modulator 100 into two parts 114 and 116. The first part 114 comprises the anode 106. The optical waveguide 102 is formed in the anode 106. The cathode 104 is integrated into the second part 116. In various embodiments, the cathode 104 comprises a layer of a material from group III-V as the first layer. A MOS capacitor 124 is located between the cathode 104 and the anode 106.

[0019] A dielectric 118 is formed between the cathode 104 and the anode 106. The dielectric 118 can be an electrically insulating material formed between the cathode 104 and the anode 106 of the MOS capacitor 124, and the polarization of the dielectric 118 by an applied electric field can increase the surface charge of the MOS capacitor 224 for a given electric field strength. The dielectric 118 can consist of native oxides of the cathode or the anode, or of both, or of external dielectric materials such as high-k dielectrics or polymers, which can be formed by deposition, oxidation, wafer bonding, or other dielectric coating processes.

[0020] The cathode 104 can be made of negatively doped silicon and the anode 106 of positively doped silicon. A cathode electrode 120 is located on the cathode 104 and an anode electrode 122 is located on the anode 106. When a voltage is applied between the electrodes, charge carrier accumulation, depletion, or inversion can occur around the dielectric 118. Since the capacitor region overlaps with the optical waveguide, changes in charge carrier concentration can lead to changes in the waveguide's modal refractive index and to propagation losses. By biasing the voltage applied between the electrodes, the refractive index can be modulated accordingly, resulting in modulation of the optical intensity, modulation of the phase shift, and attenuation.

[0021] Light can be fed into the bus waveguide 105, from which a portion is branched off into the optical waveguide 102 (e.g., at least a portion of the light propagating in the bus waveguide 104 is transferred to the optical waveguide 102). The light propagating through the optical waveguide 102 is modulated, attenuated, and phase-shifted based on changes in the waveguide's modal refractive index induced by the bias voltage of the MOS capacitor 124. A portion of the modulated and attenuated light can then be branched off from the optical waveguide 102 into the bus waveguide 105 and output from the optical modulator 100 for downstream use.

[0022] Fig. For example, 1B contains a DC current source 126. The DC current source 126 acts as a signal source and has a negative terminal connected to the cathode electrode 120 and a positive terminal connected to the anode electrode 122. This results in a migration of negative charges from the cathode 104 to a side of the optical waveguide 102 adjacent to the cathode 104 and a migration of positive charges ("holes") from the anode 106 to an opposite side of the waveguide 102 (also referred to here as the accumulation mode). In other examples, the polarity of the DC current source 126 can be reversed. Reversing the polarity of the DC current source 126 causes a migration of negative charges from the waveguide 102 to the cathode electrode 120 and a migration of holes from the waveguide 102 to the anode electrode 122 (also referred to here as the depletion mode).

[0023] The MOS capacitor 124 forms at the interface between the group III-V material of the cathode 104 and the underlying capacitor portion of intrinsic silicon or another group IV material. A thin layer of silicon and group III-V oxides (e.g., the dielectric 118) forms naturally at this interface and serves as the dielectric for the capacitor. In some examples, this thin layer has a thickness in the nanometer range, e.g., a few nanometers thick. In some examples, no steps need to be taken to promote the formation of the dielectric 118. In other examples, the formation of the dielectric 118 can be stimulated, e.g., by increasing the temperature, by exposing the materials to an oxygen-rich atmosphere, or by another suitable technique.

[0024] In some examples, the group III-V material may include indium phosphide (InP). In other examples, the group III-V material may include gallium arsenide (GaAS) or other compounds of indium, gallium, phosphorus, and arsenic. Generally, the cathode and anode are formed from different materials, which may include II-VI semiconductor compounds or other materials. Metals may also be used.

[0025] As already mentioned, the MOS capacitor 124 is located inside the optical waveguide 102, so that charge carriers that accumulate / dissipate on both sides of the capacitor dielectric change the refractive index of the optical waveguide and the waveguide loss (e.g. loss or attenuation of the transmitted signal power in the waveform).

[0026] The MOS capacitor 124 can operate in accumulation, depletion, or inversion mode (e.g., accumulation of electrons at the dielectric layer in addition to the presence of holes). As described above, a DC voltage can be applied between the anode and cathode, causing a thin charge layer to accumulate, deplete, or invert on both sides of the dielectric layer 118. The resulting change in the density of free charge carriers causes a change in the refractive index n of the optical waveguide 102, which is reflected in a change in the effective refractive index of the optical mode (Δn). eff ) expresses itself. The extent of the change or modulation of the effective refractive index (Δn) eff ) and the associated change in optical losses (Δα) can be described as follows: Δneff=−q2λ028π2c2nε0(ΔNemce*+ΔNhmch*) Δα=−q3λ024π2c3nε0(ΔNemce*2μe+ΔNhmch*2μh)

[0027] where q is the electric charge applied to the cathode 104 and the anode 106, c is the speed of light in a vacuum, ε0 is the permittivity of free space, and n is the refractive index of the material, ΔN represents a change in the charge carrier density, such that ΔN e The change in charge carrier density with respect to electrons represents that ΔN h the change in charge carrier density with respect to holes, m* the relative effective mass of electrons (m* ce ) and holes (m* ch ) represents, µ h represents the mobility of the holes, µ e represents the mobility of the electrons and λ0 is the wavelength of free space.

[0028] The optical phase shift (Δφ) at the end of the capacitor depends on the magnitude of the voltage-induced Δneff, the device length L, and the optical wavelength λ. In this example, the optical phase shift can be calculated as Δφ = 2π Δn effLλ. Thus, the optical phase of the light in the optical waveguide 102 can be shifted based on the voltage-induced Δneff. In various examples, the waveguide loss in silicon and group III-V materials can change simultaneously with the carrier density, and controlling the change in waveguide loss can be used as an optical attenuator. For example, changes in waveguide loss can be controlled based on changes in carrier density, which can lead to attenuation of the waveguide losses. The attenuated waveguide losses can be used to modulate a signal.

[0029] As in Fig. As shown in Figure 1A, the optical module 100 can be an optical ring resonator modulator. In this case, the one shown in Fig. In Figure 1B, the trench 112 is provided as an annular trench that divides the optical modulator into a first and a second section 114 and 116, respectively. Similarly, the anode 106 is provided as an annular anode in the second part, while the cathode 104, the dielectric 118, and the silicon layer 116 in the first part have a cylindrical shape. The MOS capacitor 124 is defined by a boundary between the cathode and the anode.

[0030] Fig. 1C shows simulated relationships between the optical modulator 100 of the Fig. 1A and Fig. Figure 1B shows the applied voltage for various cathode materials, plotted against the change in the refractive index (Δneff) of the optical mode of the waveguide (left axis) and the change in free carrier absorption (FCA) (right axis). As indicated by pointer 130, the solid lines show the change in refractive index (Δneff) for each material (e.g., Si, InP, and GaAs). Similarly, pointer 140 indicates that the dashed lines represent the change in FCA for each material (e.g., Si, InP, and GaAs).

[0031] The optical modulator in the example, which is used to generate Fig. The 1C used contained a cathode 106 with a thickness of 150 nm, made of Si, InP or GaAS, as in Fig. Figure 1C shows the dielectric layer 118 to be 15 nm thick and made of dialuminous oxide (Al₂O₂). The anode 104 was made of silicon carbide (Si). The section of the anode 104 containing the waveguide 102 was 800 nm wide and 250 nm thick. This is an example configuration used to demonstrate the design shown in Figure 1C. Fig. To generate the simulated data shown in 1C. Other configurations are conceivable.

[0032] As described above, the depletion or accumulation of charges at the interface leads to a change in the density of free charge carriers, which alters the local refractive index of waveguide 102. In conventional systems, such as in Fig. However, as shown in 1C, this effect is weak, slow, and inefficient. For example, it shows Fig. 1C shows a weak change in the refractive index along the left y-axis (Δneff). The implementations disclosed here amplify the change in the refractive index, as for example in conjunction with the Fig. 4-6 described. Accordingly, the examples disclosed herein enhance this effect by, for example, improving the optical phase shift induced by the MOS capacitor by increasing the amount of change per applied voltage and / or shortening the time interval between the applied voltage and the induced change.

[0033] In the implementations disclosed here, a MOS capacitor modulator is combined with a silicon device integrated into the optical waveguide, configured to improve the efficiency of the optical phase shift by increasing the changes in charge carrier concentration in the waveguide, e.g. by integrating a resistor element, a PIN junction diode and / or a PN junction diode into the optical waveguide.

[0034] Fig. Figure 2 shows an example of an optical device according to the implementations disclosed herein. The implementations shown here are described as MOS capacitor lasers (MOSCAP) and, in particular, as microlasers with a hybrid optical MOS modulator. The optical device 200 can be a cross-sectional representation of the optical device 300. Fig. 3 along line BB'.

[0035] The optical device 200 comprises an optical waveguide 202, a first cathode 204 comprising a first material and a portion of which is formed in the optical waveguide 202, and an anode 206 comprising a second material that differs from the first material and is formed in the optical waveguide 202. The anode 206 is adjacent to the cathode 204 within the optical waveguide 202. A capacitor 224 is arranged between the anode 206 and the cathode 204.

[0036] In various examples, a BOX layer 201 containing an oxide is grown on a substrate 208, e.g., a diverse oxide such as a silicon dioxide layer. A silicon device layer 210 and the anode 206 are also formed on the BOX layer 201. The cathode 204 is formed above the silicon device layer 210 opposite the BOX layer 201 and spans a trench 212 formed between the silicon device layer 240 and the capacitor 224. In various embodiments, the cathode 204 comprises a layer of group III-V material as the first material, such as indium phosphide (InP), gallium arsenide (GaAS), or other compounds of indium, gallium, phosphorus, and arsenic. The cathode 204 can be formed by deposition, wafer bonding, monolithic growth, or other fabrication methods. The anode 206 can contain silicon or another material of group IV as a second material, e.g.Germanium, silicon carbide, silicon germanium, and so on. Capacitor 224 can be a MOSCAP located between cathode 204 and anode 206.

[0037] A dielectric 218 (also referred to here as an interface layer) is formed between the cathode 204 and the anode 202 and in the waveguide 202. The dielectric 218 can consist of native oxides of the cathode or the anode, or of both, or of external dielectric materials such as high-k dielectrics or polymers, which can be formed by deposition, oxidation, wafer bonding, or other dielectric coating processes.

[0038] The MOSCAP 224 forms at the interface between the first material of the cathode 204 and the underlying optical waveguide made of semiconductor material (e.g., silicon or another Group IV material). A thin layer of silicon and III-V oxides (e.g., the dielectric 218) forms at this interface and serves as the dielectric for the capacitor. In some cases, the dielectric layer 218 can have a thickness in the nanometer range; for example, it can be a few nanometers thick. In some cases, no steps are necessary to promote the formation of the dielectric 218. In other cases, the formation of the dielectric 218 can be induced, for example, by increasing the temperature, exposing the materials to an oxygen-rich atmosphere, or using another suitable technique.

[0039] The cathode 204 can comprise negatively doped silicon (e.g., an n-doped semiconductor layer) and the anode 206 can comprise positively doped material (e.g., a p-doped semiconductor layer). In some embodiments, the anode 206 comprises a highly positively doped material, which, for example, has a higher charge carrier concentration (e.g., holes or electrons) than the cathode 204. In one example, the anode 206 can be a material with a doping concentration of approximately 1 e²⁰ cm⁻¹. -3 include. In some examples, the silicon component layer 210 can comprise a heavily doped material, e.g., the silicon component layer 210 can comprise a material with a doping of approximately 1 e20 cm⁻¹. -3The circuit comprises a contact electrode 220 (also referred to as electrode 220) located on the cathode 204 and a contact electrode 222 (also referred to as electrode 222) located on the anode 206. When a bias voltage is applied to electrodes 220 and 222, charge carrier accumulation, depletion, or inversion can occur around the dielectric 220, as described in more detail below. Since the capacitor region overlaps with the optical waveguide, changes in charge carrier concentration can lead to changes in the waveguide's modal refractive index and propagation losses. By biasing the voltage applied between electrodes 220 and 222, the refractive index can be modulated accordingly, resulting in modulation of the optical intensity, attenuation, and an optical modal phase shift (e.g., a shift in the wavelength transmitted by the waveguide 202).

[0040] Light passing through the optical waveguide 202 (e.g. orthogonal to Fig. 2) As the light propagates, it is modulated, attenuated, and phase-shifted based on changes in the waveguide's modal refractive index induced by the bias of the MOSCAP 224. A portion of the modulated and attenuated light can then be tapped from the optical waveguide 202 into the bus waveguide 205 via a channel between the trench 212 and the BOX layer 201, and output downstream by the optical device 200 for use. The BOX layer 201 can be provided to limit the optical mode in the vertical direction (e.g., into the layers provided on the BOX layer 201).

[0041] As already mentioned, the MOS capacitor is formed inside the optical waveguide 202, so that charge carriers accumulating / disappearing on both sides of the capacitor dielectric change the refractive index of the optical waveguide and the propagation loss.

[0042] The MOS capacitor can operate in accumulation, depletion, or inversion mode. As described above, a DC voltage can be applied between anode 206 and cathode 204, causing a thin charge layer to accumulate, deplete, or invert on both sides of the dielectric layer 218. The resulting change in the density of free charge carriers causes a change in the refractive index n of the waveguide 202, which is reflected in a change in the effective refractive index of the optical mode (Δn). eff ) is reflected. The extent of the change or modulation of the effective refractive index (Δn) eff) and the associated change in optical losses (Δa) can be described as shown above in equations 1 and 2. The voltage-induced Δneff also causes an optical phase shift of the light propagating in the optical waveguide 202, as described above.

[0043] To enhance the change in the effective refractive index and the optical phase shift in the optical waveguide 202, the silicon device layer 210 is formed on the BOX layer 201 and in the waveguide 202. The silicon device layer 210 comprises the anode 206 and a second cathode 240, which includes a third material formed in the bus waveguide 205. The third material can be silicon or another material of group IV, which may be the same as or different from that of the cathode 204. The second cathode 240 is also formed in the optical waveguide 202 and thus forms the channel through which a portion of the light traversing the waveguide 202 can be tapped into the bus waveguide 205. The second cathode 240 is formed in the silicon device layer 210 and overlaps with the trench 212.

[0044] As mentioned previously, the change in the effective modal refractive index and phase shift caused by the bias applied to the MOS capacitor is small and is improved by the implementations disclosed here through the use of the silicon component layer 210. As described above, for example, the implementations disclosed here enable an improvement in phase tuning efficiency, resulting in wider wavelength shifts that can be used for direct high-speed modulation and / or alignment with resonator-based modulators. For example, the second cathode 240 can comprise a doped material that can be positively or negatively doped (e.g., an n-doped semiconductor layer or a p-doped semiconductor layer), and the optical waveguide 202 can comprise intrinsically doped material or positively and / or negatively doped material (e.g.,an n-doped semiconductor layer or a p-doped semiconductor layer). The second cathode 240 can consist of heavily doped material of both polarities (e.g., 210 can be a material with a doping of approximately 1 e20 cm). -3 (include). A contact electrode 234 is arranged on the cathode 240. When a bias voltage is applied between the electrodes 234 and 222, an increase in charge carrier accumulation, depletion, or inversion can occur within the optical waveguide 202, due to the doped materials of the silicon component layer 210, as described in more detail below. Because of the silicon component layer 210 formed in the optical waveguide 202, the change in charge carrier concentration can amplify the changes in the waveguide's modal refractive index and the propagation losses caused by the bias voltage of the MOSCAP 224.

[0045] In various examples, the dielectric 218 is formed between the cathode 240 and the cathode 204. In the example in Fig. In the second example shown, the dielectric 218 extends continuously from the cathode 204 to the optical waveguide 202, so that it overlaps with the trench 212. In another example, the dielectric 218 may not be present within the trench 212.

[0046] In this case, two dielectrics 218 can be formed, a first dielectric between the optical waveguide 202 and the cathode 204 and a second between the cathode 240 and the cathode 204.

[0047] In addition, the optical device 200 includes, in various examples, an optional light-emitting section configured to generate light that is injected into the optical waveguide 202. The light generated by the light-emitting section can be modulated based on the bias of the MOSCAP 224 and the second cathode 240, and a portion of the modulated light can be tapped into the bus waveguide 205. If the light-emitting section is not included in the optical device 200, the light can be received from the bus waveguide 205 and tapped into the optical waveguide 202 as described above. The tapped light can then be modulated based on the bias of the MOSCAP 224 and the second cathode 240 and then output into the bus waveguide 205.

[0048] The light-emitting section can be a light-emitting diode, a laser diode, or similar. In the Fig. In the example shown in Figure 2, the optical device 200 comprises an optical gain material 232 (or laser gain material in the case of a laser diode) formed on the cathode 204. The optical gain material 232 can, for example, comprise quantum dots (QD) or quantum wells (QW). A doped semiconductor layer 230 is formed between the optical gain material 232 and a highly doped semiconductor layer 228. The semiconductor layers 230 and 228 can consist of silicon or another material of Group IV. In various examples disclosed herein, the material can be described as low- or lightly doped if dopants are added on the order of one dopant atom per 100 million atoms. Conversely, if many more dopants are added, on the order of one atom per ten thousand atoms, the material can be described as highly doped.In a clear example, the semiconductor layer 230 can be between 5e17 and 5e18 cm. -3 be doped, the semiconductor layer 230 can be between 5e17 and 5e18 cm² -3 be doped, the silicon component layer 210 and the anode 206 can be approximately 1e20 cm² -3 be doped, and the highly doped semiconductor layer 228 can be between 5e18 and 5e19 cm² -3 be endowed.

[0049] The doped semiconductor layer 230 can comprise positively doped silicon (e.g., a p-doped semiconductor layer), and the highly doped semiconductor layer 228 can also comprise positively doped silicon (e.g., a highly p-doped semiconductor layer). An electrode 226 can be formed on the highly doped semiconductor layer 228 opposite the doped semiconductor layer 230. When a bias voltage is applied between the electrodes 226 and 220, the change in charge carrier concentration leads to stimulated emission in the optical gain material 230, thereby generating light. The generated light traverses the layers and is received by the waveguide 202, which is then modulated according to the bias voltage of the MOSCAP and the silicon device layer 210. A portion of the modulated light is branched off into the waveguide 205 and used downstream.Controlling the width of the trench 212 changes the amount of light from the optical waveguide 202 that is injected into the waveguide 205 (e.g., a greater width results in a smaller percentage of the light being injected into the waveguide).

[0050] Accordingly, by biasing the voltage applied between electrodes 226 and 220, light emission is generated by the optical device 200 and injected into the optical waveguide 202. The light can then be modulated and attenuated by changing the refractive index of the optical waveguide 202 by biasing a voltage applied to the capacitor region, which can be amplified by biasing the silicon layer region. For example, phase shifting and modulation via separate electrical contacts (e.g., applying a bias voltage between electrode 220 and electrode 222 while simultaneously applying a bias voltage between electrode 234 and electrode 222) in the implementations described here allows not only non-return-to-zero (NRZ) modulation with a larger optical modulation amplitude (OMA) with two synchronous electrical NRZ signals, but also pulse amplitude modulation (e.g.,PAM4) with two separate electrical NRZ signals. For example, independent bias voltages at each electrode contact pair allow for separate modulation. As an example, the MOSCAP 224 and the second cathode 240 can be biased independently to generate different modulations of the phase shift characteristics. Furthermore, the bias voltage of the light-emitting section can enable modulation of the output light amplitude along with phase shift modulation. A clear example is biasing the voltage at electrodes 226 and 220 of the light-emitting section to effect amplitude modulation of the light (e.g., different light intensity), while simultaneously biasing the MOSCAP 224 and the second cathode 240 to effect phase shift modulation.

[0051] Fig. Although Figure 2 shows that the optical device 200 includes the light-emitting section, the present disclosure is not limited to this. For example, the optical device 200 need not include the light-emitting section and can receive light from an external source, for example, similar to the optical modulator 100 described above. Even if certain materials are described as negatively or positively doped, the disclosure is not limited to this, and the polarity of the doping can be reversed. While in the example above the cathode 204 was described as negatively doped and the anode 206, layer 230, and layer 228 as positively doped, the polarity of each layer can be reversed such that the cathode 204 is positively doped and the anode 206, layer 230, and layer 228 are negatively doped.

[0052] Fig. Figure 3 shows a top view of an exemplary optical device according to the implementations disclosed herein. The optical device 300 of Fig. Figure 3 shows a microlaser with an optical hybrid MOS modulator having a ring-shaped structure, e.g., a microring laser with an optical hybrid MOS modulator (here generally referred to as a MOSCAP microring laser or simply a MOSCAP laser). In an illustrative example, optical device 300 is an example of optical device 200, which has a ring-shaped or circular structure in the top view. Optical device 200 in Fig. 2 can, for example, be a representation of a cross-section of the optical device 300 along line BB'. Accordingly, the reference numerals in Fig. 3 identical reference symbols in Fig. 2 correspond. For example, the reference numeral 302 can be in Fig. 3 the optical fiber 202 from Fig. 2 correspond to the reference symbol 305 to the bus waveguide 205, etc. The elements and structures of Fig. 3 exhibit the same properties and characteristics as described above in connection with Fig. 2 were described, with the exception of those described here with reference to Fig. 3 outlined.

[0053] The optical device 300 is formed on a BOX layer 301 and a silicon component layer 310 thereon. An annular cathode 304 is formed on the top surface of the silicon component layer 310 with a thin dielectric (e.g., similar to dielectric 218) between them (not shown) and spans a trench (not shown). The silicon component layer 310 is formed within the bus waveguide 305 and the optical waveguide 302. The silicon component layer 310 comprises a cylindrical anode 306, an annular 302, and an annular cathode 340. The cylindrical anode 306, on which an electrode 322 is formed, is enclosed by the annular optical waveguide 302 and the annular cathode 340. The waveguide 305 is formed within the cathode 340. A MOS capacitor is defined between the cathode 304 and the anode 306 using the dielectric formed between the cathode 304 and the anode 306.

[0054] In the illustrative example of Fig. In the following example, a cylindrically shaped electrode 322 is formed on the anode 306; electrodes 320a and 320b (together electrodes 320) are formed on the cathode 304; and electrodes 334a and 334b ​​(together electrodes 334) are formed on the cathode 340. The cathode 304 can have one electrode 320a, one electrode 320b, or both, as desired. Each electrode 320 can be partially ring-shaped and partially encircle the anode 306. In another example, the electrodes 320 can be integrated as a single electrode 320 that runs ring-shaped around the anode 306. Similarly, the cathode 340 can have one electrode 334a, one electrode 334b, or both, as desired. Each electrode 334 can be partially ring-shaped and partially encircle the anode 306. In another example, the electrodes 334 can be integrated as a single electrode 334 with a ring-shaped form that surrounds the anode 306.

[0055] Furthermore, optical device 300, similar to optical device 200, includes a light-emitting section consisting of an annular optical gain material located beneath electrode 326, which surrounds anode 306. A doped semiconductor layer is formed between the optical gain material and a highly doped semiconductor layer located beneath electrode 326, as described in connection with Fig. 2 described.

[0056] During operation, the light propagates in a circular direction around the ring-shaped resonator in the optical waveguide 302. A portion of the light is then branched off from the optical waveguide 302 into the bus waveguide 305, which is then output to downstream devices.

[0057] As indicated above, the modulation and attenuation due to the bias applied to the capacitor region can be improved by incorporating the silicon device layer described herein (e.g., silicon device layer 210 and / or 310) formed in an optical waveguide (e.g., waveguide 202 and / or 302). In particular, a silicon device layer according to the implementations described herein can be doped such that it causes a change in the charge carrier concentration in the waveguide in response to applied voltages. For example, silicon device layer 210 (see Fig. 2) comprise a strongly positively doped material (e.g. silicon or similar) which, in an embodiment not covered by the wording of the claims, integrates a resistance element into the optical waveguide 202 (or 302).

[0058] As an example, the silicon device layer 210 can comprise a strongly negatively doped material (e.g., silicon or the like) that integrates a positive-intrinsic-negative (PIN) junction element into the optical waveguide 202 (or 302), the optical waveguide being an intrinsically doped region. In another example, the silicon device layer 210 can comprise a first region of a strongly negatively doped material (e.g., silicon or the like) and a second region of a negatively doped material (e.g., silicon or the like) that integrates a positive-negative (PN) junction diode element into the optical waveguide 202 (or 302). Further details of each implementation are given below with reference to the Fig. 4, Fig. 5 to Fig. 6 described.

[0059] Fig. Figure 4 shows an example, not covered by the wording of the claims, for an optical device 400 according to an implementation disclosed herein. Fig. Figure 4 shows an optical device 400, which corresponds to the optical device 200. Fig. 2 and / or the optical device 300 of Fig. 3 is similar or the same, so that the same reference numbers are in Fig. 4 the same elements from Fig. 2. As with optical devices 200 and 300, optical device 400 comprises a capacitor section and an optical light-emitting section, as shown above in conjunction with the Fig. 2 and Fig. 3 described.

[0060] Furthermore, the optical device 400 includes a silicon component layer 410, which is similar to the silicon component layer 210 of the optical device 200, except that the optical waveguide 402 is integrated with a resistive element. For example, the silicon component layer 410 can be essentially the same as the silicon component layer 210 of Fig. The two are similar, except that the cathode 440 comprises a highly positively doped material, such as silicon or another group IV material. Furthermore, the waveguide 402 contains an intrinsically doped material (e.g., silicon or another group IV material) between and in contact with the cathode 440 and the anode 206. In this implementation, as mentioned above, the anode 206 comprises a highly positively doped material. Accordingly, changes in the charge carrier concentration in the waveguide 402 result in a high-resistance region, which generates heat due to charge flow between the highly doped contacts of the waveguide 402. Thus, a resistive element is integrated into the waveguide 402.

[0061] In the Fig. In the example shown in Figure 4, a current source 450 is electrically coupled between electrodes 222 and 220 and between electrodes 222 and 234. The current source 450 can be a DC source whose negative terminal is connected to electrodes 220 and 234 and whose positive terminal is connected to electrode 222. The current source 450 can be controlled, for example, by a control device (e.g., in the form of a...) Fig. (as described in section 8) are controlled to apply a bias voltage between the respective electrodes. That is, a bias voltage can be applied between electrodes 222 and 234 simultaneously with a bias voltage between electrodes 222 and 220. While this is in Fig. While example 4 shows a single current source 450, multiple current sources can also be used instead. For instance, a first current source can be used to apply a first bias voltage to electrodes 222 and 220, and a second current source can be used to apply a second bias voltage to electrodes 222 and 234. In this way, the bias voltage at the respective electrodes can be controlled simultaneously and independently.

[0062] If a voltage is present between electrodes 222 and 220 according to the diagram in Fig. When the example shown in section 4 is applied (e.g., power source 450), negative charges and holes accumulate around the interface layer 218. As shown in Fig. As shown in Figure 4, for example, negative charges migrate from the cathode 204 towards the waveguide 402 and holes (positive charges) migrate from the anode 206 to the waveguide 402. The charge accumulation and the change in charge carrier concentration lead to changes in the refractive index of the waveguide and the propagation loss, as described above.

[0063] If a voltage is present between electrodes 234 and 222 according to the diagram in Fig. As shown in example 4, when applied, positive charge flows through the optical device, generating heat in the waveguide 402. As shown in Fig. As shown in Figure 4, holes (e.g., positive charges) migrate from the heavily positively doped anode 206 into the intrinsically doped waveguide 402. The charge flow in the waveguide 402 leads to a resistance region that generates heat. This heat generation increases the effective refractive index of the waveguide as follows: −∇⋅(k∇T)=Q

[0064] The thermal effect is modeled by the steady-state heat equation (Poisson equation), shown in Eq. 3. K is the thermal conductivity coefficient, Q is the total charge (e.g., the charge carrier concentration) of the heat source, and T is the temperature. The thermal effect can be numerically simulated for a given structure. Once the gradient of T is determined, the thermo-optic coefficient of a material (dn / dT) can be used to calculate the change in the refractive index, which is defined by dn.

[0065] Accordingly, the change in the effective refractive index can be amplified by the generation of heat in the waveguide 402 by the integrated resistive element. For example, an increased temperature can cause an additional and faster change in the effective refractive index in conjunction with the change in the refractive index caused by the bias of the capacitor section.

[0066] In another example, the polarity of the power source 450 can be reversed. Reversing the polarity of the power source causes negative charges to migrate from waveguide 402 to electrode 220 and holes to migrate from waveguide 402 to electrode 222. Similarly, reversing the polarity of the power source causes hole charges to migrate from waveguide 402 to electrode 222, thereby reducing the resistance and lowering the temperature.

[0067] Furthermore, the optical phase (Δφ) also changes depending on the temperature as follows: Δφ=2πLHλ0dndTΔT where L H where ΔT is a thermal length of the waveguide 402, dn / dT is a thermo-optic coefficient that depends on the material from which the waveguide 402 is formed (e.g., indicating a change in the refractive index with response to temperature), ΔT is the temperature change of the waveguide 402, and λ0 is the free-space wavelength. Thus, the biasing of the electrodes 234 and 222 improves the phase shift of the optical mode in the waveguide 202 by amplifying the changes induced by the MOSCAP 224.

[0068] Furthermore, with regard to the optional light-emitting section, when a voltage is applied between electrodes 226 and 220 according to the [reference to be added] Fig. As shown in example 4, when a current source 460 is applied (e.g., via a current source 460), negative charge and holes accumulate in the optical amplification material 232, resulting in a pump source function. As shown in Fig. As shown in Figure 4, for example, a negative terminal of the power source 460 (which can be a DC source) can be connected to electrode 220 and a positive terminal to electrode 226. Accordingly, negative charges migrate from cathode 204 to the optical gain material 232, and holes (positive charges) migrate from the highly doped semiconductor layer 228 through the doped semiconductor layer 230 to the optical gain material 232. The accumulation of charges and holes leads to energy transition states that generate stimulated emissions, resulting in optical gain from which light can be emitted. The emitted light propagates through cathode 204 into waveguide 402. A portion of the light in waveguide 402 can then be diverted from waveguide 402 into bus waveguide 205 via a channel between trench 212 and BOX layer 201.The light can be modulated according to the bias voltage applied to the electrodes, as explained above.

[0069] A non-restrictive advantage of the optical device 400 is that, since the waveguide 402 is intrinsically doped, the optical loss is kept low, although with increased heating below the laser structure, which may possibly decrease the wall-plug efficiency.

[0070] Fig. Figure 5 shows an example of an optical device 500 according to an implementation disclosed herein. Fig. Figure 5 shows an optical device 500, which corresponds to the optical device 200. Fig. 2 and / or the optical device 300 of Fig. 3 is similar, so that the same reference signs are used in Fig. 5 the same elements from Fig. 2. As with optical devices 200 and 300, optical device 500 comprises a capacitor section and an optical light-emitting section, as shown above in conjunction with Fig. 2 and Fig. 3 explained.

[0071] Additionally, the optical device 500 includes a silicon component layer 510, which is similar to the silicon component layer 210 of the optical device 200, except that the optical waveguide 502, which is similar to the waveguide 202, is integrated with a PIN junction diode element. For example, the silicon component layer 510 can be substantially similar to the silicon component layer 210 of Fig. The two implementations are similar, except that the cathode 540 comprises a strongly negatively doped material, such as silicon or another group IV material. Furthermore, the optical waveguide 502 is an intrinsically doped semiconductor material (e.g., silicon or another group IV material) located between and in contact with the cathode 540 and the anode 206. In this implementation, the anode 206, as mentioned above, comprises a strongly positively doped material. Accordingly, the combination of the cathode 540, the intrinsically doped waveguide 502, and the anode 206 functions as a PIN junction diode and can inject carriers and holes into the waveguide 502. The injection of charge carriers and holes can also cause a temperature change (e.g., increased heat).

[0072] As in Fig. In Figure 4 above, a power source 550 is electrically coupled between electrodes 222 and 220 and between electrodes 222 and 234. The power source 550 can be a DC source whose negative terminal is connected to electrodes 220 and 234 and whose positive terminal is connected to electrode 222. The power source 550 can be, for example, controlled by a control device (e.g., in the form of a...) Fig. (as described in section 8) are controlled to apply a bias voltage between the respective electrodes. That is, a bias voltage can be applied between electrodes 222 and 234 simultaneously with a bias voltage between electrodes 222 and 220. While this is in Fig. While the example shown in Figure 5 uses a single current source 550, multiple current sources can also be used instead. For example, a first current source can be used to apply a first bias voltage to electrodes 222 and 220, and a second current source can be used to apply a second bias voltage to electrodes 222 and 234. In this way, the bias voltage at the respective electrodes can be controlled simultaneously and independently.

[0073] If a voltage is present between electrodes 222 and 220 according to the diagram in Fig. As shown in the example 5, the particles accumulate, similar to the optical device 400 in Fig. 4 above, negative charge and holes around the interface layer 218. The accumulation of charge and the change in charge carrier concentration lead to changes in the waveguide refractive index and propagation loss, as described above.

[0074] If a voltage is present between electrodes 234 and 222 according to the diagram in Fig. As shown in example 5, positive and negative charges accumulate in the optical waveguide 502. As in Fig. As shown in Figure 5, negative charges migrate from the cathode 540 into the optical waveguide 502, and holes (positive charges) migrate from the anode 206 into the optical waveguide 502. The change in charge carrier concentration and distribution in the silicon layer 510 leads to additional changes in the modal refractive index of the waveguide and the propagation loss. The change in the refractive index is, for example, the result of a plasma dispersion effect in the waveguide 502. The extent of the change can be determined by experimental results, as shown below for a silicon waveguide: Δn(@λ0=1310nm)=−2.98×10−22×ΔN1.016−1.25×10−18×ΔP0.835 Δn(@λ0=1550nm)=−5.4×10−22×ΔN1.011−1.53×10−18×ΔP0.838 where Δn is the change in the refractive index, and ΔN and ΔP are the changes in the density of free electrons (e.g., negative charge) and holes (e.g., positive charge), respectively. Equations 5 and 6 show that the accumulation of holes causes a larger refractive shift than the accumulation of electrons. Accordingly, one approach to improving the phase shift efficiency is to increase the accumulation of holes inside waveguide 502, as shown in Fig. Figure 5 shows another approach to improving the efficiency of the phase shift is to increase the total density of free carriers in the waveguide 502; however, this could lead to increased optical loss due to free carrier absorption.

[0075] Furthermore, the accumulation of charge carriers and holes in the waveguide 502 can lead to a temperature increase (e.g., generating heat). As mentioned above in connection with Fig. As described in section 4, heat generation can improve the refractive index change and the efficiency of the phase shift.

[0076] In another example, the polarity of the power source 550 can be reversed. Reversing the polarity of the power source causes negative charges to migrate from waveguide 502 to electrode 220 and holes to migrate from waveguide 502 to electrode 222. Similarly, reversing the polarity of the power source causes holes to migrate from waveguide 502 to electrode 222 and electrons to migrate from waveguide 502 to electrode 234.

[0077] Furthermore, the optional light-emitting section of Fig. 5 as above in connection with Fig. 3 described. For example, if a voltage (e.g., via the current source 560) is applied between electrodes 226 and 220 according to the diagram in Fig. In the example shown in section 5, negative charge and holes accumulate in the optical amplification material 232, resulting in a function as a pump source from which light can be emitted and propagate into the waveguide 502.

[0078] Fig. Figure 6 shows another example of an optical device 600 according to an implementation disclosed herein. Fig. Figure 6 shows an optical device 600, which corresponds to the optical device 200. Fig. 2 and / or the optical device 300 of Fig. 3 is similar, so that the reference signs in Fig. 6 the same elements from Fig. 2. As with optical devices 200 and 300, optical device 600 thus comprises a capacitor section and an optical light-emitting section, as shown above in conjunction with Fig. 2 and Fig. 3 explained.

[0079] Furthermore, the optical device 600 includes a silicon component layer 610, which is similar to the silicon component layer 210 of the optical device 200, except that the optical waveguide 602, which is similar to the waveguide 202, is integrated with a PN junction diode element. For example, the silicon component layer 610 can be compared to the silicon component layer 510 of Fig. 5. Similar, e.g., the cathode 640 is a strongly negatively doped material and the anode 206 is a strongly positively doped material. In the example of Fig. However, waveguide 602 comprises a first region 605 with a positively doped material (e.g., silicon or another group IV material) and a second region 615 with a negatively doped material (e.g., silicon or another group IV material). Furthermore, a third region 620, comprising a lightly doped material, is arranged between the anode 206 and waveguide 602. Accordingly, waveguide 602, similar to waveguide 202, incorporates a PN junction diode that can alter the charge carrier concentration within waveguide 602. This change in charge carrier concentration can also cause a temperature change (e.g., increased heat).

[0080] Similar to the previous examples, a current source 650 is electrically coupled between electrodes 222 and 220 and between electrodes 222 and 234. The current source 650 can be a DC source whose negative terminal is connected to electrodes 220 and 234 and whose positive terminal is connected to electrode 222. The current source 650 can be, for example, controlled by a control device (e.g., in the form of a...) Fig. (as described in section 8) are controlled to apply a bias voltage between the respective electrodes. That is, a bias voltage can be applied between electrodes 222 and 234 simultaneously with a bias voltage between electrodes 222 and 220. While this is in Fig. While the example shown in Figure 6 uses a single current source 650, multiple current sources can also be used instead. For example, a first current source can be used to apply a first bias voltage to electrodes 222 and 220, and a second current source can be used to apply a second bias voltage to electrodes 222 and 234. In this way, the bias voltage at the respective electrodes can be controlled simultaneously and independently.

[0081] Similar to the previous examples, when a voltage is applied between electrodes 222 and 220, the following accumulates according to the diagram in Fig. In the example shown in Figure 6, negative charge and holes are present around the interface layer 218. The accumulation of charge and the change in charge carrier concentration lead to changes in the waveguide refractive index and propagation loss, as described above.

[0082] If a voltage is present between electrodes 234 and 222 according to the diagram in Fig. When the example shown in section 6 is applied, the distribution of positive and negative charges in the optical waveguide 602 changes. For example, as in Fig. Figure 6 shows negative charges from the second region 615 to the cathode 340 and holes (positive charges) from the first region 605 to the anode 206. The change in charge carrier concentration and distribution in the waveguide 602 leads to additional changes in the modal refractive index of the waveguide and in propagation losses. The change in the refractive index is, for example, the result of a plasma dispersion effect in the waveguide 602. The extent of the change can be determined, as shown above, from the experimental results of equations 5 and 6.

[0083] As shown in equations 5 and 6, holes cause a larger refractive shift than electrons. One way to improve the phase shift efficiency is therefore to introduce more holes into the optical waveguide 602 by modifying the offset PN junction. Fig. 6 is used. A second possibility is to increase the overall density of free charge carriers in the optical waveguide 602, but this is accompanied by optical losses due to the absorption of free charge carriers. One method to overcome the optical loss is to use different transition shapes. For example, L- and U-shaped PN junctions can improve the overlap between the carrier exchange region and the optical mode to increase the efficiency of the phase shift.

[0084] In another example, the polarity of the power source 650 can be reversed. Reversing the polarity of the power source causes negative charges to migrate from waveguide 602 to electrode 220 and holes to migrate from waveguide 602 to electrode 222. Similarly, reversing the polarity of the power source causes holes to migrate from electrode 222 towards the first region 605 and electrons to migrate from electrode 234 towards the second region 615.

[0085] Furthermore, the optional light-emitting area of Fig. 6 as above in connection with Fig. 3 described. For example, if a voltage (e.g., via the current source 660) is applied between electrodes 226 and 220 according to the diagram in Fig. In the example shown in 6, negative charge and holes accumulate in the optical amplification material 232, resulting in a function as a pump source from which light can be emitted and propagate into the waveguide 502.

[0086] The Fig. Although Figures 4-6 show optical devices with a light-emitting section, the present disclosure is not limited to these. For example, the optical devices described above need not contain the light-emitting section and can receive light from an external source, for example, similar to the optical modulator 100 described above. Furthermore, although the various materials are described as negatively or positively doped, the implementations described here are not limited to this, and the polarity of the doping can be reversed. While in the example above the cathode 204 was described as negatively doped and the anode 206, layer 230, and layer 228 as positively doped, the polarity of each layer can be reversed such that the cathode 204 is positively doped and the anode 206, layer 230, and layer 228 can be negatively doped.Similarly, if the doping polarity is switched, the polarity of the doping of the second cathode (e.g. cathodes 440, 540 and 640) and of the optical waveguide (e.g. optical waveguides 402, 502 and 602) is also switched.

[0087] Fig. Figure 7 is a schematic diagram of an exemplary optical device according to the implementations disclosed herein. Fig. Figure 7 shows an optical device 700 comprising a hybrid MOS capacitor 720, a semiconductor device 730 and an optional light-emitting section 710.

[0088] The hybrid MOS capacitor 720 can be configured to, for example, modulate the optical intensity and attenuate it by biasing a voltage applied to the hybrid MOS capacitor 720 to cause a change in the effective refractive index or a change in the optical phase. The hybrid MOS capacitor 720 can, for example, be implemented as anode 206, cathode 204, and interface layer 218 in contact with the waveguide 202, as described above in the context of the Fig. 2-6 described.

[0089] The semiconductor device 730 can be configured to amplify the modulation and attenuation induced by the capacitor 720, for example, based on the bias of a voltage applied to the semiconductor device 730, which induces additional changes in the effective refractive index and / or changes in the optical phase. In an example not covered by the wording of the claims, the semiconductor device 730 can be implemented as a resistive element, e.g., by means of the waveguide 402, which is connected to the anode 206 and the silicon component layer 410, as described above in connection with Fig. 4 described.

[0090] In another example, the semiconductor device 730 can be implemented as a PIN junction diode element, e.g. by the waveguide 502, which is connected between the anode 206 and the silicon device layer 510, as above in connection with Fig. 5 described. In yet another example, the semiconductor device 730 can be implemented as a PN junction diode element, e.g. by the waveguide 602 between the anode 206 and the cathode 640, as described above in connection with Fig. 6 described.

[0091] The light-emitting section 710 can be configured to emit light, e.g., laser light, based on the bias of a voltage applied to the light-emitting section 710 to induce electrical states in an optical gain material. The light-emitting section 710 can, for example, be implemented as a highly doped semiconductor layer 228, a doped semiconductor layer 230, an optical gain material 232, and a cathode 204, as described above in the context of the Fig. 2-6 described.

[0092] In addition to improving the modulation and phase shift of the MOSCAP ring resonator, the examples described here can also offer a wider range and more complex functionality for tuning. By applying phase shift and modulation via separate electrical contacts (e.g., applying a bias voltage between electrodes 220 and 222 while simultaneously applying a bias voltage between electrodes 234 and 222), the implementations described here can achieve not only non-return-to-zero (NRZ) modulation with a larger optical modulation amplitude (OMA) using two synchronous electrical NRZ signals, but also pulse amplitude modulation (e.g., PAM4) using two separate electrical NRZ signals. For example, the bias voltages applied independently to each electrode pair enable separate modulation. Thus, for example...The MOSCAP 720 and the semiconductor device 730 can be biased independently to produce different modulations of the phase shift characteristics. Furthermore, biasing the light-emitting section 710 can enable modulation of the output light amplitude along with phase shift modulation. An illustrative example is biasing the voltage across electrodes 226 and 220 of the light-emitting section 710 to produce amplitude modulation of the light (e.g., by changing the light intensity), while simultaneously biasing the MOSCAP 720 and the semiconductor device 730 to produce phase shift modulation. Accordingly, PAM4 modulation can be achieved by the voltage applied in conjunction with the... Fig. Examples 2-6 described can be achieved.

[0093] Fig. Figure 8 shows a block diagram of an example Computer System 800, in which various embodiments of the system described here can be implemented. The Computer System 800 comprises a bus 802 or other communication mechanism for transmitting information, and one or more hardware processors 804 coupled to the bus 802 for processing information. The hardware processor(s) 804 can be, for example, one or more general-purpose microprocessors. As described above, the Computer System 800 can be implemented to control the power sources described above (e.g., one or more of the power sources 450, 460, 550, 560, 650, and 660).

[0094] The Computer System 800 also includes a main memory 806, such as random access memory (RAM), a cache, and / or other dynamic memory devices connected to the 802 bus to store information and instructions to be executed by the 804 processor. The 806 main memory can also be used to store temporary variables or other intermediate information during the execution of instructions to be carried out by the 804 processor. Such instructions, stored in memory media accessible to the 804 processor, make the Computer System 800 a specialized machine, adapted to perform the operations specified in the instructions.

[0095] The Computer System 800 also includes a read-only memory (ROM) 808 or other static storage device connected to the 802 bus to store static information and instructions for the 804 processor. A storage device 810, such as a magnetic disk, an optical disk, or a USB flash drive, etc., is provided and connected to the 802 bus to store information and instructions.

[0096] The Computer System 800 can be connected via the bus 802 to a display 812, e.g., a liquid crystal display (LCD) (or a touchscreen), to show information to a computer user. An input device 814, including alphanumeric and other keys, is coupled to the bus 802 to transmit information and command selections to the processor 804. Another type of user input device is the cursor control 816, such as a mouse, trackball, or cursor direction keys, for transmitting directional information and command selections to the processor 804 and for controlling cursor movement on the display 812. In some embodiments, the same directional information and command selections as with the cursor control can be implemented by receiving touches on a touchscreen without a cursor.

[0097] The Computer System 800 can include a user interface module for implementing a graphical user interface, which can be stored in a mass storage device as executable software code that is executed by the computer device(s). This and other modules can include components such as software components, object-oriented software components, class components and task components, processes, functions, attributes, procedures, subroutines, segments of program code, drivers, firmware, microcode, circuits, data, databases, data structures, tables, arrays, and variables.

[0098] In general, the terms "component," "engine," "system," "database," "data store," and the like, as used here, can refer to logic embodied in hardware or firmware, or to a collection of software instructions that may have entry and exit points and are written in a programming language such as Java, C, or C++. A software component may be compiled and linked into an executable program, installed in a dynamic link library, or written in an interpreted programming language such as BASIC, Perl, or Python. It is understood that software components may be invoked by other components or by themselves, and / or may be invoked in response to detected events or interruptions. Software components configured to run on computer devices may be stored on a computer-readable medium, such as...Software code may be provided on a compact disc, digital video disc, flash drive, magnetic disk, or other tangible medium, or as a digital download (and may initially be stored in a compressed or installable format that must be installed, decompressed, or decrypted before execution). Such software code may be stored partially or entirely in memory within the executing computer device for execution by the computer device. Software instructions may be embedded in firmware, such as an EPROM. Furthermore, the hardware components may consist of interconnected logic units such as gates and flip-flops, and / or programmable units such as programmable gate arrays or processors.

[0099] The Computer System 800 can implement the techniques described herein using custom hard-wired logic, one or more ASICs or FPGAs, firmware, and / or program logic which, in combination with the Computer System, causes or programs the Computer System 800 to be a special-purpose machine. According to one embodiment, the techniques described herein are executed by the Computer System 800 in response to the execution of one or more sequences of instructions from the main memory 806 by the Processor(s) 804. Such instructions may be read into the main memory 806 from another storage medium, such as the Storage Device 810. The execution of the instruction sequences contained in the main memory 806 causes the Processor(s) 804 to perform the process steps described herein.In alternative embodiments, hard-wired circuits can be used instead of, or in combination with, software instructions.

[0100] The term "non-transitory media" and similar terms as used here refer to all media that store data and / or instructions that cause a machine to operate in a particular way. Such non-transitory media can include non-volatile and / or volatile media. Non-volatile media include, for example, optical or magnetic disks, such as the Storage Device 810. Volatile media include dynamic storage, such as the Main Memory 806. Common forms of non-transitory media include, for example, floppy disks, hard disks, solid-state drives, magnetic tapes or other magnetic data storage media, CD-ROMs, other optical data storage media, physical media with hole patterns, RAM, PROM and EPROM, FLASH-EPROM, NVRAM, other memory chips or cartridges, and their networked versions.

[0101] Non-transitory media differ from transmission media but can be used in conjunction with them. Transmission media are involved in the transfer of information between non-transitory media. Examples of transmission media include coaxial cables, copper and fiber optic cables, including the wires that make up the 802 bus. Transmission media can also take the form of sound or light waves, such as those generated in radio and infrared data communication.

[0102] The Computer System 800 also includes a Communications Interface 818, which is connected to the 802 bus. The Communications Interface 818 provides a two-way data communication connection to one or more network connections, which are connected to one or more local area networks (LANs). For example, the Communications Interface 818 could be an ISDN (Integrated Services Digital Network) card, a cable modem, a satellite modem, or a modem to establish a data communication connection to a corresponding type of telephone line. Another example: The Network Interface 818 could be a LAN (Local Area Network) card to establish a data communication connection to a compatible LAN (or a WAN component for communication with a WAN). Wireless connections can also be implemented.In each of these implementations, the 818 communication interface sends and receives electrical, electromagnetic, or optical signals that transmit digital data streams representing various types of information. The 818 communication interface can be communicatively coupled to one or more power sources (e.g., one or more of the 450, 460, 550, 560, 650, and 660 power sources). Fig. 4-6).

[0103] A network connection typically enables data communication across one or more networks to other data devices. For example, a network connection might establish a link across a local area network to a host computer or to data devices operated by an Internet service provider (ISP). The ISP, in turn, provides data communication services across the worldwide packet data communication network, now commonly referred to as the "Internet." Both the local area network and the Internet use electrical, electromagnetic, or optical signals to transmit digital data streams. The signals across the various networks, the signals on the network link, and the 818 communication interface that transmit digital data to and from the Computer System 800 are examples of transmission media.

[0104] The Computer System 800 can send messages and receive data, including program code, via the network(s), network connection, and communication interface 818. In the Internet example, a server could transmit requested code for an application program via the Internet, the ISP, the local network, and communication interface 818.

[0105] The received code can be executed by the processor 804 as soon as it is received and / or stored in the memory device 810 or other non-transitory memory for later execution. Accordingly, the computer system 800 can be configured to control the bias voltage applied between the contact electrodes by sending instructions to one or more power sources via the communication interface(s) 818, in accordance with the instructions stored in the main memory 806 and / or ROM 808.

[0106] Each of the processes, procedures, and algorithms described in the preceding sections can be embodied in code components and fully or partially automated by them, which are executed by one or more computer systems or computer processors with computer hardware. The one or more computer systems or computer processors can also be operated in such a way as to support the execution of the corresponding operations in a cloud computing environment or as Software as a Service (SaaS). The processes and algorithms can be partially or fully implemented in application-specific circuits. The various features and procedures described above can be used independently or combined in various ways.Various combinations and subcombinations are said to fall within the scope of this disclosure, and certain procedure or process blocks may be omitted in some implementations. The procedures and processes described herein are also not restricted to a particular order, and the associated blocks or states may be executed in other suitable orders, in parallel, or otherwise. Blocks or states may be added to or removed from the disclosed examples. The execution of certain operations or processes may be distributed across computer systems or computer processors, not just on a single machine, but distributed across a number of machines.

[0107] A circuit like the one used here can be implemented in any form of hardware, software, or a combination thereof. For example, one or more processors, controllers, ASICs, PLAs, PALs, CPLDs, FPGAs, logic components, software routines, or other mechanisms can be implemented to form a circuit. In the implementation, the various circuits described here can be implemented as discrete circuits, or the described functions and features can be partially or completely distributed across one or more circuits.Even if various features or functional elements are individually described or claimed as separate circuits, these features and functions may be shared by one or more common circuits, and such a description is not intended to require or imply that separate circuits are necessary to implement these features or functions. If a circuit is implemented wholly or partly in software, such software may be implemented to operate with a computer or processing system capable of performing the functionality described with respect to it, such as the Computer System 800.

[0108] As used herein, the term "or" can be understood in both an inclusive and an exclusive sense. Furthermore, the singular description of resources, processes, or structures is not to be understood as excluding the plural. Conditional expressions such as "may," "could," "might," or "can," unless expressly stated otherwise or understood differently in context, are generally intended to express that certain embodiments include certain features, elements, and / or steps, while other embodiments do not.

[0109] Unless explicitly stated otherwise, the terms and expressions used in this document, as well as their variations, are to be understood as open rather than restrictive. Adjectives such as "conventional," "traditional," "normal," "standard," "known," and terms with similar meanings are not to be understood as limiting the described subject matter to a specific period or to an item available at a particular time, but should be understood as encompassing conventional, traditional, normal, or standard technologies that may be available or known now or at any time in the future.The presence of expansive words and phrases such as "one or more", "at least", "but not limited to" or similar phrases in some cases is not to be understood as implying that the narrower case is intended or required when such expansive phrases are not present.

Claims

[1] An optical device (200, 300) comprising the following: a substrate (201,301); a heterogeneous metal oxide semiconductor MOS capacitor formed on the substrate, wherein the MOS capacitor comprises: an optical fiber (202, 302); a first cathode (204, 304) comprising a first material in which an optical waveguide is formed; an anode (206, 306) formed in the optical waveguide, the anode comprising a second material that differs from the first material; and a dielectric (218, 318) arranged between the first cathode and the anode, wherein the dielectric comprises an oxide of the first material and an oxide of the second material, where the heterogeneous MOS capacitor is defined between the anode and the first cathode; and a semiconductor component layer that is arranged between the substrate and the heterogeneous MOS capacitor and is formed in the optical waveguide, characterized by , that the optical waveguide (202, 302) comprises a first region and a second region that define a pn junction diode formed in the optical waveguide (202, 302). [2] An optical device (200, 300) comprising the following: a substrate (201,301); a heterogeneous metal oxide semiconductor MOS capacitor formed on the substrate, wherein the MOS capacitor comprises: an optical fiber (202, 302); a first cathode (204, 304) comprising a first material in which an optical waveguide is formed; an anode (206, 306) formed in the optical waveguide, the anode comprising a second material that differs from the first material; and a dielectric (218, 318) arranged between the first cathode and the anode, wherein the dielectric comprises an oxide of the first material and an oxide of the second material, where the heterogeneous MOS capacitor is defined between the anode and the first cathode; and a semiconductor component layer that is arranged between the substrate and the heterogeneous MOS capacitor and is formed in the optical waveguide, characterized by , that the semiconductor device layer comprises a third material that is charged oppositely to the anode (206, 306), wherein the semiconductor device layer, the optical waveguide (202, 302) and the anode define a PIN junction diode. [3] Optical device (200, 300) according to claim 1 or 2, further comprising a light-emitting diode arranged on the heterogeneous MOS capacitor opposite the substrate (201, 301). [4] Optical device (200, 300) according to claim 3, wherein the light-emitting diode comprises an optical amplification material (232) formed on the first cathode (204, 304) opposite the dielectric (218, 318). [5] Optical device (200, 300) according to claim 1 or 2, wherein the optical device has a micro-ring shape. [6] Optical device (200, 300) according to claim 1, wherein the semiconductor device layer comprises a second cathode (240, 340) comprising a third material and in which optical waveguides (202, 302) are formed, wherein the anode (206, 306) and the second cathode each comprise dopants of opposite polarity and wherein the first region comprises dopants of the same polarity as the anode and the second region comprises dopants of the same polarity as the second cathode. [7] Optical device (200, 300) according to claim 2, wherein the semiconductor component layer comprises a second cathode (240, 340) comprising a third material and in which an optical waveguide (202, 302) is formed, wherein the anode (206, 306) and the second cathode each comprise dopants of opposite polarity and wherein the optical waveguide is intrinsically doped. [8] Optical device (200, 300) according to one of claims 1 or 2, wherein the first material comprises a material of group III-V. [9] Optical device (200, 300) according to one of claims 1 or 2, wherein the second material comprises a material of group IV. [10] Optical device (200, 300) according to one of claims 1 or 2, wherein the semiconductor component layer comprises a material of group IV.

Images