METHOD FOR PRODUCE CHEMICALLY ANCHORED POWDER MATERIALS IN SEMICONDUCTOR PACKAGES AND CORRESPONDING SEMICONDUCTOR PACKAGES

Abstract

Method for forming a semiconductor package, comprising the following: Forming a conversion coating solution (100) comprising a salt of a vanadate, a salt of a zirconate or both with a complexing agent; Cleaning a copper conductor frame (200), wherein the cleaned copper conductor frame (200) comprises copper oxide on an outer surface thereof; Immersion of the cleaned copper conductor frame (200) into the conversion coating solution (100); Flushing the copper conductor frame (200); and Forming an assembly by the following: Coupling a semiconductor die (600) with the copper conductor frame (200); Coupling the semiconductor die (600) with a lead of the copper conductor frame (200); Applying a potting compound (700) to at least part of the outer surface of the copper conductor frame (200); and Curing of the potting compound (700), wherein the adhesive strength at an interface between the potting compound (700) and at least part of the outer surface of the copper conductor frame (200) is increased relative to an identical assembly formed without immersion of the copper conductor frame (200) in the conversion coating solution (100).

Description

BACKGROUND

[0001] Semiconductor chips are often housed within semiconductor packages, which protect the chips from harmful environmental influences such as heat, moisture, and dirt. An encapsulated chip communicates with electronic devices outside the package via conductive elements, such as leads, exposed to the package surfaces. Inside the package, the chip can be electrically coupled to the conductive elements using any suitable technique. One such technique is flip-chip technology, in which the semiconductor chip (also called a "die") is flipped so that the device side of the chip (on which a circuit arrangement is formed) faces downwards. The device side is coupled to the conductive elements using, for example, solder pads.Another technique is wire bonding, in which the fixture side of the semiconductor chip is oriented upwards and coupled to the conductive elements using bond wires. DE 10 2018 118 544 A1 relates to adhesion-enhancing structures for a package. US 2003 / 0 137 032 A1 describes a prefabricated electrode frame for semiconductor devices and a manufacturing process. DE 10 2013 103 860 A1 teaches a chip package and a method for forming it. US 2021 / 0 210 419 A1 relates to a quad flat no-lead package with wettable flanges. SUMMARY

[0002] In examples, a process for forming a semiconductor package comprises: forming a conversion coating solution comprising a salt of a vanadate, a salt of a zirconate, or both with a complexing agent; cleaning a copper conductor frame, wherein the cleaned copper conductor frame comprises copper oxide on an outer surface thereof; immersing the cleaned copper conductor frame in the conversion coating solution; rinsing the copper conductor frame; and forming an assembly by coupling a semiconductor die to the copper conductor frame, coupling the semiconductor die to a lead of the copper conductor frame, applying a potting compound to at least a portion of the outer surface of the copper conductor frame, and curing the potting compound.The adhesive strength at an interface between the potting compound and at least part of the outer surface of the copper conductor frame is increased relative to an identical assembly formed without immersing the copper conductor frame in the conversion coating solution.

[0003] In examples, a semiconductor package comprises a die pad and a lead that are chemically bonded to a potting compound via a conversion coating of the die pad and lead with zirconate, vanadate or a combination thereof, or a co-deposited layer of copper and tungsten on the die pad and lead. BRIEF DESCRIPTION OF THE DRAWINGS Fig. Figure 1 is a schematic diagram illustrating the mixing of a zirconate salt, a vanadate salt or a combination thereof with one or more complexing agents to produce a conversion coating solution according to various examples. Fig. Figure 2 is a cross-sectional view of an unroughened copper conductor frame with a copper oxide layer according to various examples. Fig. Figure 3 is a cross-sectional view of an unroughened copper conductor frame with a thinned copper oxide layer according to various examples. Fig. Figure 4 is a schematic diagram illustrating the immersion of a copper conductor frame into a conversion coating solution according to various examples. Fig. Figure 5 is a cross-sectional view of a copper conductor frame with a conversion coating layer according to various examples. Fig. Figure 6 is a top view of a copper conductor frame with a conversion coating layer and a semiconductor die coupled to it, according to various examples. Fig. Figure 7 is a cross-sectional view of a copper conductor frame with a conversion coating layer and a potting compound adjacent to and chemically bonded to the conversion coating layer, according to various examples. Fig. Figure 8 is a cross-sectional view of a semiconductor package with a potting compound chemically anchored in a die pad and conductive terminals, according to various examples. Fig. Figure 9 is a flowchart of a process for manufacturing a semiconductor package with a potting compound chemically anchored in a die pad and conductive terminals, according to various examples. Fig. Figure 10 is a cross-sectional view of an unroughened copper conductor frame with a copper oxide layer according to various examples. Fig. Figure 11 is a cross-sectional view of an unroughened copper conductor frame with a thinned copper oxide layer according to various examples. Fig. Figure 12 is a cross-sectional view of a copper conductor frame with a copper-tungsten layer electroplated onto the copper conductor frame, according to various examples. Fig. Figure 13 is a top view of a copper conductor frame with an electroplated copper-tungsten layer and a semiconductor die coupled to it, according to various examples. Fig. Figure 14A shows a cross-sectional view of a copper conductor frame with an electroplated copper-tungsten layer coupled to it and a potting compound chemically anchored in the electroplated copper-tungsten layer according to various examples. Fig. Figure 14B shows a cross-sectional view of a semiconductor package with a potting compound chemically bonded to a die pad and conductive terminals, according to various examples. Fig. Figure 15 is a flowchart of a process for manufacturing a semiconductor package with a potting compound chemically anchored in a die pad and conductive terminals, according to various examples. Fig. Figure 16 is a graph illustrating the superior bond strength of the chemical anchoring technique described here relative to other approaches according to various examples. DETAILED DESCRIPTION

[0004] In a semiconductor package, a semiconductor die is generally coupled to a die pad (e.g., using a die fixing material), and the die is coupled to conductive elements (e.g., leads) using bond wires, conductive contact bumps, etc. The die pad and conductive elements are obtained from a conductor frame and are generally made of copper. During package manufacturing, a potting compound is applied to cover the die, the die pad, the conductive elements, the bond wires or conductive contact bumps, and any other components contained within the package. Accordingly, the potting compound is adjacent to the die pad and the conductive elements. The bond strength between the potting compound and the die pad, and between the potting compound and the conductive elements, depends on the roughness of the die pad / conductive elements, any mechanical anchoring, etc.These techniques often lead to delamination between the potting compound and the die pad, and between the potting compound and the conductive elements. Delamination can result in reduced structural and / or functional integrity of the housing.

[0005] This disclosure describes various examples of techniques for chemically anchoring a potting compound in a conductor frame, which is subsequently used to produce the die pad and conductive elements of a package. In one example, a conductor frame is immersed in a conversion coating solution. The conversion coating solution can be formed, for example, by mixing a zirconate salt with a complexing agent, a vanadate salt with a complexing agent, or a combination thereof. When the conductor frame is immersed in the conversion coating solution, the zirconate, vanadate, or combination thereof in the conversion coating solution forms chemical bonds with the copper in a copper oxide layer on a surface of the conductor frame.The resulting layer can be referred to as a conversion coating layer, and its surface contains free hydroxyl groups that bond with functional groups (e.g., hydroxides) in a potting compound when the potting compound is applied to the conversion coating layer and cured. In this way, the free hydroxyl groups in the conversion coating layer are incorporated into a backbone of the potting compound during curing. In other words, the potting compound is chemisorbed onto the conversion coating layer of the conductor frame. Consequently, the potting compound is chemically anchored within the conductor frame (e.g., the die pad and conductive elements).

[0006] In other examples, a copper-tungsten layer is electroplated onto the copper oxide surface of the die pad and the conductive elements. The copper-tungsten is acidic and dissolves the copper oxide. The copper-tungsten layer adheres strongly to the conductor frame because both the copper-tungsten layer and the conductor frame are metallic. The copper-tungsten layer contains hydroxylated hydroxide groups that chemically bond with hydroxide groups in the potting compound during curing. In this way, the potting compound is chemically anchored to the conductor frame (e.g., the die pad and the conductive elements).

[0007] Fig. Figures 1-8 describe a process flow for manufacturing a semiconductor package with a potting compound chemically anchored in a die pad and conductive terminals, according to various examples. Fig. Figure 9 is a flowchart of a process 900 for manufacturing a semiconductor package with a potting compound chemically anchored in a die pad and conductive leads, according to various examples. Accordingly, Fig. 1-8 and 9 are described in parallel.

[0008] The process 900 begins by forming a conversion coating solution comprising a salt of a vanadate, a salt of a zirconate or both with a complexing agent (902). Fig. Figure 1 is a schematic diagram illustrating the mixing of a zirconate salt, a vanadate salt, or a combination thereof with one or more complexing agents to produce a conversion coating solution according to various examples. In particular, a conversion coating layer 100 is formed by mixing a zirconate salt 102 and one or more complexing agents 104, a vanadate salt 106 and one or more complexing agents 104, or a zirconate salt 102 and a vanadate salt 106 and one or more complexing agents 104. In the examples, the zirconate salt 102 is zirconium oxynitrate. In the examples, the vanadate salt 106 is vanadium oxynitrate. Other salts are provided. In the examples, one or more complexing agents 104 include ethylenediamine. In examples, one or more complexing agents contain ethylenediaminetetraacetic acid.Other complexing agents are provided. In some examples, the conversion coating solution 100 is an acid with a pH in the range of 1 to 4, where a pH above this range is disadvantageous because the solution can be difficult or dangerous to handle, and where a pH below this range is disadvantageous due to the resulting precipitation effects. In various examples, the relative concentrations of salts in the conversion coating solution 100 are as follows: 0% zirconate salt and 100% vanadate salt; 25% zirconate salt and 75% vanadate salt; 50% zirconate salt and 50% vanadate salt; 75% zirconate salt and 25% vanadate salt; and 100% zirconate salt and 0% vanadate salt. In some examples, the conversion coating solution 100 is an acid with a pH in the range of 1 to 4.

[0009] Method 900 involves cleaning a copper conductor frame, wherein the cleaned copper conductor frame contains copper oxide on an outer surface (904). Fig. Figure 2 is a cross-sectional view of an unroughened copper conductor frame 200 according to various examples. An unroughened copper conductor frame is one that has not been subjected to any special roughening process. The conductor frame 200 comprises a pure copper layer 202 (e.g., at least 100% copper, at least 99% copper, at least 98% copper, at least 95% copper) and a thin copper oxide layer 204 adjacent to the pure copper layer 202. Fig. Figure 3 is a cross-sectional view of the conductor frame 200 with a thinned copper oxide layer 206 according to various examples. The copper oxide layer 206 can be thinned by the cleaning process from step 904, for example, a deoxidation process. The cleaning (deoxidation) process is carried out using 10% sulfuric acid and is performed by immersion for no more than 30 seconds at room temperature. Immersion longer than this can be detrimental because it dissolves too much or all of the copper oxide layer 204.

[0010] Method 900 involves immersing the cleaned copper conductor frame in the conversion coating solution (906). Fig. Figure 4 is a schematic diagram illustrating the immersion of a conductor frame 200 into the conversion coating solution 100 according to various examples. Fig. Figure 5 is a cross-sectional view of the conductor frame 200 with a conversion coating layer 500 (comprising, for example, a copper vanadate, copper zirconate, or both) adjacent to the pure copper layer 202, as shown in various examples. Immersion of the purified copper conductor frame 200 in the conversion coating solution 100 leads to a condensation reaction between the zirconate, the vanadate, or both with the copper oxide. The conductor frame 200, as shown in Fig. Figure 4 shows only a single conductor frame, as opposed to a conductor frame strip, but the techniques described here can be extended to any number of conductor frames within a conductor frame strip. The complexing agents 104 make the zirconate and vanadate salts more reactive with the copper oxide layer on the surface of the conductor frame 200 by inducing a positive charge in the zirconium or vanadium atoms in the zirconate or vanadate salt, respectively. The complexing agents 104 can also stabilize such a positive charge to promote a reaction with copper. The zirconate or vanadate chemically bonds with copper atoms via the oxygen atoms in the copper oxide layer of the conductor frame 200.If both zirconate and vanadate are present in the conversion coating solution 100, the zirconate and vanadate compete for copper atoms in the copper oxide layer. This competition is influenced by the relative concentrations of zirconate and vanadate, as well as by the relative energy requirements of each for bond formation. For example, if zirconate has a higher concentration and lower energy requirements for bond formation, it can outcompete vanadate for copper atoms in the copper oxide layer. The formation of such bonds creates the conversion coating layer 500, which borders the pure copper layer 202.

[0011] Immersion of the conductor frame 200 in the conversion coating solution 100 can be carried out for 5 minutes or less, 4 minutes, 3 minutes, 2 minutes, or 1 minute. The immersion is performed at a temperature of 40°C, 35°C, 30°C, 25°C, or 20°C. In some examples, the immersion is performed at a temperature within 10-15°C of room temperature. In others, immersion is performed for 2 minutes at 30°C. The application of heat promotes the formation of the previously described chemical bonds between the zirconate, vanadate, and copper oxide layer. The copper conductor frame can then be rinsed, for example, with deionized water (908).

[0012] Method 900 includes coupling a semiconductor die with a die pad and leads of the conductor frame (910). Fig. Figure 6 is a top view of the copper conductor frame 200 with a conversion coating layer and a semiconductor die coupled to it, according to various examples. In particular, the conductor frame 200 is coated with the conversion coating layer (e.g., on all surfaces of the conductor frame 200 or on a subset of surfaces of the conductor frame 200). A semiconductor die 600 is coupled to a die pad 602. Wire bonding contact mounds 604 are formed on the semiconductor die 600 (e.g., on bond pads on a fixture side of the semiconductor die 600), and bond wires 606 are coupled to the wire bonding contact mounds 604 and to leads 608.

[0013] Method 900 involves forming an assembly by applying and curing a potting compound on at least a part of the outer surface of the die pad and the leads (912). Fig. Figure 7 is a cross-sectional view of the conductor frame 200 with the pure copper layer 202, the conversion coating layer 500, and a potting compound 700 (e.g., an epoxy) adjacent to and chemically bonded to the conversion coating layer, according to various examples. The potting compound 700 can, for example, be injected into a mold in which the conductor frame 200 is placed. When applied to the conductor frame 200, and in particular to the conversion coating layer 500, and then cured, functional groups (e.g., hydroxides) in the potting compound 700 chemically react with free hydroxyl (-OH) groups on the surface of the conversion coating layer 500. These free hydroxyl groups are produced when the copper oxide layer of the conductor frame bonds to the conversion coating solution, as previously described.In other words, the free hydroxyl groups on the surface of the conversion coating layer 500 bind to the backbone or framework of the potting compound 700 upon application and subsequent curing of the potting compound 700. It can be said that the potting compound 700 is thus chemically anchored in the conversion coating layer 500, the pure copper layer 202, or more generally, in the conductor frame 200.

[0014] Method 900 includes trimming and shaping the leads (e.g. to form a wing shape) (914). Fig. Figure 8 is a cross-sectional view of a semiconductor package 800 with the potting compound 700 chemically anchored in the die pad 602 and the conductive terminals 608 (e.g., leads), according to various examples. The semiconductor die 600 is coupled to the die pad 602 by a die mounting layer 802. The conversion coating layer 500 is present on part or all of the die pad 602 and / or part or all of the conductive terminals 608. The potting compound 700 is chemically anchored, as described above. Fig. 8. As shown in Figure 8, the chemical anchoring techniques described here can be extended to any and all types of semiconductor packages where a potting compound is adjacent to a copper layer and delamination is undesirable.

[0015] Fig. 10-14B form a process flow for manufacturing a semiconductor package with a potting compound that is chemically anchored in a die pad and conductive terminals, according to various examples. Fig. Figure 15 is a flowchart of a process 1500 for manufacturing a semiconductor package with a potting compound chemically anchored in a die pad and conductive leads, according to various examples. Accordingly, Fig. 10-14B and 15 are now described in parallel.

[0016] Method 1500 includes cleaning a copper conductor frame, wherein the cleaned copper conductor frame contains copper oxide on an outer surface (1502). Fig. Figure 10 is a cross-sectional view of an unroughened copper conductor frame 1000 with a copper oxide layer according to various examples. In particular, the conductor frame 1000 includes a pure copper layer 1002 and a copper oxide layer 1004 adjacent to the pure copper layer 1002. Fig. Figure 11 is a cross-sectional view of an unroughened copper conductor frame 1000 with the pure copper layer 1002 and a thinned copper oxide layer 1100 adjacent to the pure copper layer 1002, according to various examples.

[0017] Method 1500 involves co-deposition of copper and tungsten onto the copper conductor frame (1504). Fig. Figure 12 is a cross-sectional view of the copper conductor frame 1000 with a copper-tungsten (CuW) alloy layer 1200 electroplated onto the copper conductor frame 1000, according to various examples. The copper-tungsten layer 1200 is acidic and has a pH value in the range of 1 to 4. In some examples, the copper-tungsten layer 1200 has a pH value of 3. The acidic pH of the copper-tungsten layer 1200 dissolves the copper oxide layer 1100 ( Fig. 11) during electroplating. The copper-tungsten layer 1200 adheres strongly to the pure copper layer 1002 because the two layers are metallic.

[0018] Method 1500 involves coupling a semiconductor die with a die pad and leads (1506). Fig. Figure 13 is a top view of a copper conductor frame 1000 with an electroplated copper-tungsten layer and a semiconductor die coupled to it, according to various examples. In particular, the copper conductor frame 1000 includes a semiconductor die 1300 coupled to a die pad 1302. Wire bonding spheres 1304 are coupled to a fixture side (e.g., bond pads on a fixture side) of the semiconductor die 1300. Bonding wires 1306 are coupled to the wire bonding spheres 1304 and the leads 1308.

[0019] Method 1500 involves forming an assembly by applying and curing a potting compound on at least a part of the outer surface of the die pad and the leads with the copper-tungsten co-deposited thereon (1508). Fig. Figure 14A shows a cross-sectional view of a copper conductor frame with an electroplated copper-tungsten layer coupled to it and a potting compound chemically anchored in the electroplated copper-tungsten layer, according to various examples. Specifically, the copper conductor frame 1000 includes the pure copper layer 1002 and the electroplated copper-tungsten layer 1200, which is adjacent to and coupled with the copper conductor frame 1000. During the potting compound injection process, the copper-tungsten layer 1200 is exposed to water vapor in the ambient air, causing it to hydroxylate and forming hydroxide groups within the copper-tungsten layer 1200. In some examples, a hydroxylated form of tungsten is formed within the copper-tungsten layer 1200.When the potting compound 1400 is applied to the copper-tungsten layer 1200 and cured, the hydroxide groups in the potting compound 1400 chemically bond to hydroxide groups in the copper-tungsten layer 1200.

[0020] Method 1500 includes trimming and shaping of leads (e.g. into a wing shape) (1510). Fig. Figure 14B is a cross-sectional view of a semiconductor package 1450 with the potting compound 1400 chemically anchored in the die pad 1302 and the conductive terminals 1308 (e.g., leads), according to various examples. The semiconductor die 1300 is coupled to the die pad 1302 by a die mounting layer 1452. The copper-tungsten layer 1200 is present on part or all of the die pad 1302 and / or part or all of the conductive terminals 1308. The potting compound 1400 is chemically anchored, as described above. Although Fig. Figure 14B shows a wing-style package (e.g., a dual inline package (DIP)), the chemical anchoring techniques described here can be extended to any and all types of semiconductor packages where a potting compound is adjacent to a copper layer and delamination is undesirable.

[0021] Fig. Figure 16 is a graph of 1600 test data illustrating the superior bond strength of the chemical anchoring technique described here relative to other approaches, using various examples. The y-axis represents bond strength in Newtons per mm². 2 (N / mm 2 A reference technique using single-sided rough nickel plating from Shinko (Ref.-SSRN) to increase the bond strength between a housing potting compound and other components in the housing produces an average measured bond strength of approximately 1 N / mm². 2An unroughened copper conductor frame (NR-Cu) produces an average measured bond strength of approximately 1.2 N / mm². 2 A smooth pre-plated ladder frame (PPF) finish produces an average measured bond strength of approximately 1.2 N / mm². 2 Other SSRN techniques produce an average measured bond strength of approximately 1.9 N / mm². 2 A technique involving roughening on bare copper produces an average measured bond strength of approximately 3 N / mm². 2 A brown oxide produces an average measured adhesive strength of approximately 2.6 N / mm². 2 However, the chemical anchoring techniques described here consistently produce superior bond strength, with the conversion coating technique achieving an average bond strength of approximately 4.5 N / mm². 2produced and where the electroplating technique achieves an average adhesive strength of approximately 3.9 N / mm² 2 produced.

[0022] Unless otherwise stated, "approximately", "about", or "essentially" before a value means ±10 percent of the stated value. Modifications to the described examples are possible, and other examples are possible within the scope of the claims.

Claims

[1] Method for forming a semiconductor package comprising: Forming a conversion coating solution (100) comprising a salt of a vanadate, a salt of a zirconate or both with a complexing agent; Cleaning a copper conductor frame (200), wherein the cleaned copper conductor frame (200) comprises copper oxide on an outer surface thereof; Immersion of the cleaned copper conductor frame (200) into the conversion coating solution (100); Flushing the copper conductor frame (200); and Forming an assembly by the following: Coupling a semiconductor die (600) with the copper conductor frame (200); Coupling the semiconductor die (600) with a lead of the copper conductor frame (200); Applying a potting compound (700) to at least part of the outer surface of the copper conductor frame (200); and Curing of the potting compound (700), wherein the adhesive strength at an interface between the potting compound (700) and at least part of the outer surface of the copper conductor frame (200) is increased relative to an identical assembly formed without immersion of the copper conductor frame (200) in the conversion coating solution (100). [2] Method according to claim 1, wherein the complexing agent comprises ethylenediaminetetraacetic acid EDTA, ethylenediamine or a combination thereof. [3] Method according to claim 1, wherein the conversion coating solution (100) further comprises an acid. [4] Method according to claim 1, wherein the immersion comprises immersing the copper conductor frame (200) in the conversion coating solution (100) for less than or equal to about 5, 4, 3, 2 or 1 minute(s). [5] Method according to claim 1, wherein the immersion is effected at an immersion temperature of less than or equal to about 35, 30 or 25 °C. [6] Method according to claim 1, wherein immersion of the cleaned copper conductor frame (200) in the conversion coating solution (100) provides a conversion-coated copper conductor frame (200) comprising free hydroxyl groups on the outer surface. [7] Method according to claim 6, wherein the potting compound (700) is chemisorbed onto the conversion-coated copper conductor frame (200). [8] Method according to claim 6, wherein the conversion-coated copper conductor frame (200) comprises zirconia of copper, vanadate of copper or both on the outer surface. [9] Method according to claim 6, wherein at least a part of the free hydroxyl groups is incorporated into a backbone of the potting compound (700) during curing. [10] Method according to claim 6, wherein the potting compound (700) comprises an epoxy and comprises free hydroxyl groups. [11] Method according to claim 1, wherein the rinsing comprises rinsing with deionized water. [12] Method according to claim 1, wherein the immersion of the purified copper conductor frame (200) into the conversion coating solution (100) leads to a condensation reaction between the zirconate, the vanadate or both with the copper oxide. [13] Method for forming a semiconductor package comprising the following: Co-deposition of copper and tungsten onto a copper conductor frame (200); and Forming an assembly by the following: Coupling a semiconductor die (600) with the copper conductor frame (200); Coupling the semiconductor die (600) with a lead of the copper conductor frame (200); Applying a potting compound (700) to at least a part of an outer surface of the copper conductor frame (200) with the copper and tungsten co-deposited thereon; and Curing of the potting compound (700), wherein the adhesive strength at an interface between the potting compound (700) and at least part of the outer surface of the copper conductor frame (200) is increased relative to an identical assembly formed without co-deposition of the copper and tungsten onto the copper conductor frame (200). [14] Method according to claim 13, wherein the co-deposition comprises electroplating a layer of a copper-tungsten CuW alloy onto the copper conductor frame (200). [15] Method according to claim 13, wherein the copper conductor frame (200) is a non-roughened copper conductor frame (200). [16] Method according to claim 13, wherein the curing causes the formation of a chemical bond between the copper conductor frame (200) and the potting compound (700). [17] Method according to claim 13, wherein the outer surface of the copper conductor frame (200) with the copper and tungsten co-deposited thereon comprises free hydroxyl groups which are incorporated into a backbone of the potting compound (700) during curing. [18] Method according to claim 17, wherein the potting compound (700) comprises an epoxy. [19] Semiconductor package comprising the following: a potting compound (700); a copper die pad with a first conversion coating layer (100) adjacent to the potting compound (700), wherein the first conversion coating layer (100) consists of a copper vanadate, a copper zirconate or a combination thereof, wherein the first conversion coating layer (100) also consists of first hydroxyl groups bonded to a framework of the potting compound (700); a conductive element exposed to an outer surface of the potting compound (700), wherein the conductive element is adjacent to the potting compound (700) and has a second conversion coating layer (100), wherein the second conversion coating layer (100) consists of a copper vanadate, a copper zirconate, or a combination thereof, and wherein the second conversion coating layer (100) also consists of second hydroxyl groups bonded to the framework of the potting compound (700); and a semiconductor die coupled to the copper die pad and to the conductive element. [20] Semiconductor package according to claim 19, wherein the copper die pad and the conductive element are non-roughened copper components. [21] Semiconductor housing according to claim 19, wherein the potting compound (700) comprises an epoxy. [22] Semiconductor package comprising the following: a potting compound (700); a copper die pad coupled to a first electroplated copper-tungsten layer, wherein the first electroplated copper-tungsten layer is adjacent to the potting compound (700) and includes first hydroxide groups bonded to second hydroxide groups in the potting compound (700); a conductive element exposed to an outer surface of the potting compound (700), wherein the conductive element is coupled to a second electroplated copper-tungsten layer, the second electroplated copper-tungsten layer being adjacent to the potting compound (700) and including third hydroxide groups bonded to fourth hydroxide groups in the potting compound (700); and a semiconductor die (600) coupled to the copper die pad and to the conductive element. [23] Semiconductor housing according to claim 22, wherein the potting compound (700) comprises an epoxy.

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