Manufacturing process for a semiconductor device and compression molding machine

Abstract

comprising a manufacturing process for a semiconductor device: • partial enclosure, with a positioning plate (11), a structural body (21) in which a connecting element (2, 2a, 2b) containing a metal powder is provided between a semiconductor element (1) and a base plate (3, 5, 10c), and exposure of the semiconductor element (1), the connecting element (2, 2a, 2b) and the base plate (3, 5, 10c) around the connecting element (2, 2a, 2b) from the positioning plate (11) in order to maintain a positional relationship between the semiconductor element (1) and the base plate (3, 5, 10c); • Placing the structural body (21) and the positioning plate (11) in a pocket element (13), maintaining the positioning relationship; • Sealing the pocket element (13) while one inside of the pocket element (13) is pressureless to form a semi-finished product (22); • Submerging, in a chamber, the semi-finished product (22) and a medium (16) which surrounds the semi-finished product (22); and • Heating the connecting element (2, 2a, 2b) by means of a heater (14d), while the semiconductor element (1), the connecting element (2, 2a, 2b) and the base plate (3, 5, 10c), which are exposed from the positioning plate (11), are isotropically pressurized by means of a piston (14c) via the medium (16) and the pocket element (13).

Description

Background of the invention; Field of the invention

[0001] The present invention relates to a manufacturing process for a semiconductor device and a compression molding machine. Description of the state of the art

[0002] A technique has been proposed for mounting an electronic component onto a printed circuit board using a fastener that has been sintered under pressure. For example, JP 2003-68 771 A proposes a technique for inserting a component to be joined and a fastener into a plastic cover, extracting air from the cover and sealing the cover, and subsequently heating the fastener to a sintering temperature while pressurizing the fastener in a chamber.

[0003] However, in the process of extracting air from the cover, in the process of pressurizing the connecting element in the chamber, and the like, it is likely that a positional deviation will occur between an insulating substrate and a semiconductor element, each of which is an element to be connected; and therefore there was a problem in that the quality of the semiconductor device would be affected.

[0004] US 2013 / 0203218A1 discloses a method for manufacturing a composite material and a power semiconductor module.

[0005] JP 2004- 311 820 A discloses a semiconductor device that can prevent the formation of cracks in the interconnect material due to different coefficients of thermal expansion between a base and a substrate equipped with a semiconductor element. Summary

[0006] The present disclosure was made in consideration of the problem described above, and it is an objective of the present disclosure to provide a technique capable of preventing positional deviation between a base plate, such as an insulating substrate, and a semiconductor element.

[0007] A manufacturing method for a semiconductor device according to the present disclosure comprises: partially enclosing, with a positioning plate, a structural body in which a connecting element containing a metal powder is provided between a semiconductor element and a base plate, and exposing the semiconductor element, the connecting element, and the base plate around the connecting element from the positioning plate in order to maintain a positional relationship between the semiconductor element and the base plate; placing the structural body and the positioning plate into a pocket element, whereby the positional relationship is maintained;Sealing the pocket element, wherein an inner side of the pocket element is pressureless to form a semi-finished product, placing the semi-finished product and a medium surrounding the semi-finished product in a chamber, and heating the connecting element by means of a heater, while the semiconductor element, the connecting element, and the base plate, which are exposed from the positioning plate, are isotropically pressurized by means of a piston via the medium and the pocket element.

[0008] This configuration is able to prevent positional deviations between the base plate and the semiconductor element.

[0009] These and other tasks, features, aspects and advantages of the present revelation will become clearer based on the following detailed description of the present revelation in conjunction with the accompanying figures. Brief description of the characters Fig. Figure 1 is a sectional view illustrating a configuration of a semiconductor device according to a first preferred embodiment. Fig. Figure 2 is a sectional view illustrating a process for manufacturing the semiconductor device according to the first preferred embodiment. Fig. Figure 3 is a sectional view illustrating a configuration of a compression molding machine used in the process for manufacturing the semiconductor device according to the first preferred embodiment. Fig. Figure 4 is a sectional view illustrating a process for manufacturing a semiconductor device according to a second preferred embodiment. Fig. Figure 5 is a sectional view illustrating a process for manufacturing a semiconductor device according to a third preferred embodiment. Fig. Figure 6 is a sectional view illustrating a process for manufacturing a semiconductor device according to a fourth preferred embodiment. Fig. Figure 7 is a sectional view illustrating a configuration of a semiconductor device according to a fifth preferred embodiment. Fig. Figure 8 is a top view and a sectional view illustrating a process for manufacturing the semiconductor device according to the fifth preferred embodiment. Fig. 9 and Fig. Figure 10 are sectional views, each illustrating a process for manufacturing the semiconductor device according to the fifth preferred embodiment. Description of preferred embodiments

[0010] Preferred embodiments are described below with reference to the accompanying figures. The features described in each of the following embodiments are purely illustrative, and not all features are necessarily required. Similar components in a multitude of embodiments are identified by identical or similar reference numerals in the following description, and mainly differing components are described. Furthermore, specific positions and directions such as "top," "bottom," "left," "right," "front," and "rear" in the following description do not necessarily correspond to positions and directions in an actual implementation. <Erste bevorzugte Ausführungsform>

[0011] Fig. Figure 1 is a sectional view illustrating a configuration of a semiconductor device according to a first preferred embodiment. The in Fig. One illustrated semiconductor device is, for example, a power semiconductor device.

[0012] The in Fig. 1 The illustrated semiconductor device comprises a semiconductor element 1, connecting elements 2 and 4, an insulating substrate 3 which is a base plate, a heat dissipation plate 5, a metal wire 6, a housing 7, an adhesive 8, a sealing element 9, and an electrode 10.

[0013] The insulating substrate 3 includes an insulating section 3a, which is an insulating layer, and circuit structure components 3b. A material for the insulating section 3a is, for example, an inorganic ceramic material such as aluminum oxide (Al2O3), aluminum nitride (AlN), or silicon nitride (Si3N4).

[0014] The circuit structure components 3b are provided on both surfaces of the insulating section 3a. A material for the circuit structure components 3b is, for example, copper, aluminum, an alloy thereof, or the like, and it is preferably a material with high electrical conductivity and high thermal conductivity.

[0015] The semiconductor element 1 is mounted on the insulating substrate 3, with the connecting element 2 inserted between the semiconductor element 1 and the insulating substrate 3. The semiconductor element 1 is, for example, a power semiconductor element such as a metal-oxide-semiconductor field-effect transistor (MOSFET), an insulated-gate bipolar transistor (IGBT), a reverse-conducting IGBT (RC-IGBT), a Schottky diode (SBD), or a PN junction diode (PND). The material for the semiconductor element 1 can typically be silicon (Si), or it can be a wide-bandgap semiconductor such as silicon carbide (SiC), gallium nitride (GaN), or diamond. In the case where the material for the semiconductor element 1 is a wide-bandgap semiconductor, the semiconductor element 1 enables stable operation at high temperatures and voltages, and high-speed switching.

[0016] The semiconductor device comprises at least one semiconductor element 1. For example, a configuration comprising an IGBT and a diode connected antiparallel to the IGBT is defined as one unit. A one-element configuration comprising one unit, a two-element configuration comprising two units, a six-element configuration comprising six units, or the like, is applied to a circuit configuration of the semiconductor device. Depending on the specifications of the semiconductor device, it is determined which of the configurations is applied to the circuit configuration of the semiconductor device.

[0017] The connecting element 2 connects the semiconductor element 1 and the upper circuit structure part 3b of the insulating substrate 3. The connecting element 2 is, for example, a metal connecting element such as a sintered material formed from a metal powder such as nanosilver and nanocopper particles.

[0018] The insulating substrate 3 is mounted on the heat dissipation plate 5, with the connecting element 4 inserted between the insulating substrate 3 and the heat dissipation plate 5. The material for the heat dissipation plate 5 can be, for example, a metallic material such as copper, aluminum, or a copper-molybdenum alloy (CuMo), or it can be, for example, a composite material such as a silicon carbide-aluminum composite (AlSiC) or a silicon nitride-magnesium composite (MgSiC). Alternatively, the material for the heat dissipation plate 5 can be, for example, an organic material such as an epoxy resin, a polyimide resin, an acrylic resin, or a polyphenylene sulfide (PPS) resin.

[0019] The connecting element 4 connects the heat dissipation plate 5 and the lower circuit structure part 3b of the insulating substrate 3. A possible material for the connecting element 4 is, for example, a solder made of lead (Pb), tin (Sn), or the like, or of a solder alloy.

[0020] The housing 7 surrounds the lateral surfaces of the semiconductor element 1, the insulating material 3, and the heat dissipation plate 5. The material for the housing 7 can be any material that has electrical insulating properties, such as a polyphenylene sulfide (PPS) resin, a polybutylene terephthalate (PBT) resin, a polyethylene terephthalate-polybutylene terephthalate (PET-BET) resin, or the like.

[0021] The adhesive 8 bonds a peripheral edge section of the heat dissipation plate 5 to a lower section of the housing 7. A silicone-based adhesive is generally used as the adhesive 8. A material for the adhesive 8 could be, for example, an acrylic resin, an epoxy resin, or the like.

[0022] The electrode 10 is integrally provided with the housing 7. One end of the electrode 10 is positioned near the semiconductor element 1 with respect to the housing 7, and the other end of the electrode 10 is positioned opposite the semiconductor element 1 with respect to the housing 7. A material for the electrode 10 is, for example, a metal containing mainly copper (Cu), an alloy thereof, or the like. A plating layer of nickel (Ni) or the like is preferably provided on one surface of the electrode 10; however, the plating layer is not essential.

[0023] The metal wire 6 selectively connects the semiconductor element 1, the upper circuit structure part 3b, and the electrode 10. The metal wire 6 is, for example, a metal conductor made of aluminum (Al), copper (Cu), an alloy thereof, or the like.

[0024] The sealing element 9 is provided in a space within the housing 7 and seals an assembly of the components described above as a body to be sealed. A material for the sealing element 9 is, for example, an insulating resin such as a silicone gel or an epoxy resin. Although not illustrated, a control board, which is connected to the semiconductor element 1 by means of wiring, can also be provided within the sealing element 9. <herstellungsverfahren>

[0025] Fig. Figure 2 is a sectional view illustrating a process for manufacturing the semiconductor device according to the first preferred embodiment. Specifically, Fig. 2 a sectional view illustrating a process for forming a semi-finished product, which is a pressure-applied target product.

[0026] In step (1), a bonding element containing an organic solvent and a metal powder such as silver or copper is applied to the upper surface of an insulating substrate 3 by a dispensing or printing process. The bonding element is heated to approximately 100°C to 150°C. The organic solvent is then evaporated and removed, forming a bonding element 2 containing the metal powder. It should be noted that a minute amount of the organic solvent may remain in the bonding element 2.

[0027] Next, a lower section of the insulating substrate 3 is inserted into a recess of a first positioning plate 11a. The recess of the first positioning plate 11a is slightly larger than an outer shape of the insulating substrate 3.

[0028] In step (2), a second positioning plate 11b, which has a recess slightly larger than the outer shape of the insulating substrate 3 and a through-hole slightly larger than the outer shape of a semiconductor element 1, is attached to the configuration described in step (1). For example, after the semiconductor element 1 has been mounted on the connecting element 2, the semiconductor element 1 and the connecting element 2 can be inserted into the through-hole of the second positioning plate 11b, and an upper section of the insulating substrate 3 can be inserted into the recess of the second positioning plate 11b.Alternatively, for example, after the connecting element 2 has been placed on the side of the through-hole of the second positioning plate 11b and the upper section of the insulating substrate 3 has been inserted into the recess of the second positioning plate 11b, the semiconductor element 1 can be inserted into the through-hole and mounted on the connecting element 2.

[0029] The first positioning plate 11a and the second positioning plate 11b, described above, are able to maintain a positional relationship between the semiconductor element 1 and the insulating substrate 3; that is, they are able to prevent any change in the relative position between the semiconductor element 1 and the insulating substrate 3. Hereinafter, the composite structure consisting of the first positioning plate 11a and the second positioning plate 11b can be referred to as a positioning plate 11.

[0030] As described above, in step (2) a structural body 21, in which the connecting element 2 between the semiconductor element 1 and the insulating substrate 3 is provided, is partially enclosed by the positioning plate 11, and the semiconductor element 1, the connecting element 2, and the insulating substrate 3 around the connecting element 2 are free of the positioning plate 11. The positional relationship between the semiconductor element 1 and the insulating substrate 3 is therefore maintained. A material for the positioning plate 11 can contain at least one metal, one resin, and one carbon. This configuration is able to increase the heat resistance and mechanical strength of the positioning plate 11, enable repeated use of the positioning plate 11, and reduce the cost of manufacturing the semiconductor device.

[0031] In step (3), the structural body 21 and the positioning plate 11 are next placed in a pocket element 13, maintaining the positional relationship between the semiconductor element 1 and the insulating substrate 3. In the first embodiment, the pocket element 13 is a single resin pocket. A material for the resin pocket is, for example, polytetrafluoroethylene (PTFE) with a heat resistance of 200°C or more and ductility, or the like.

[0032] In step (4), the pocket element 13 is next sealed, whereby the interior of the pocket element 13 is degassed and pressureless, so that a semi-finished product 22 is formed. The semi-finished product 22 according to the first preferred embodiment comprises a structural body 21, the positioning plate 11, and the pocket element 13, with which the structural body 21 and the positioning plate 11 are hermetically covered.

[0033] Fig. Figure 3 is a cross-sectional view illustrating a configuration of a compression molding machine 14 used in the process for manufacturing the semiconductor device according to the first preferred embodiment. The compression molding machine 14 applies the semi-finished product 22, which is contained in the Fig. The compression molding machine 14, as illustrated in step (4), is formed as a pressurized target product. The machine has a chamber 14a, a support base 14b, a piston 14c, and a heater 14d.

[0034] Chamber 14a contains press molds 14a1 and 14a2 and has a space for accommodating the semi-finished product 22 and a medium 16. The medium 16 is, for example, a fluorine-based active liquid, or the like, which is usable at 250°C to 300°C.

[0035] The support base 14b is provided in a space within chamber 14a, and the semi-finished product 22 is mounted on the support base 14b, the semi-finished product 22 being surrounded by the medium 16. Since the semi-finished product 22 is hermetically sealed with the pocket element 13, the entry of the medium 16 into the pocket element 13 is prevented, even though the semi-finished product 22 is surrounded by the medium 16.

[0036] The piston 14c is movable up and down relative to the chamber 14a, with the medium 16 in the chamber 14a being hermetically sealed. As described above, in the semi-finished product 22, the semiconductor element 1, the connecting element 2, and the insulating substrate 3 are covered by the pocket element 13, while being exposed to the positioning plate 11 through the through-hole of the positioning plate 11. When the piston 14c pressurizes the medium 16, the medium 16 therefore pressurizes the semiconductor element 1, the connecting element 2, and the insulating substrate 3, which are exposed to the positioning plate 11, isotropically via the pocket element 13.

[0037] This means that the piston 14c isotropically pressurizes the semiconductor element 1, the connecting element 2, and the insulating substrate 3, which are exposed by the positioning plate 11, via the medium 16 and the pocket element 13. The isotropic pressure is, for example, in the range of 20 Pa or more up to 50 MPa or less. As described above, the isotropic pressurization of the connecting element 2 and its surroundings reduces the diameter of any gap (i.e., cavity) created in the connecting element 2. Furthermore, the isotropic pressure is applied to the connecting element 2 on a projection plane of the semiconductor element 1. This configuration is therefore able to suppress any coarse density inconsistencies between a region near a terminal end and a region near the center of the connecting element 2.This configuration is effective in a case where the area of ​​semiconductor element 1 is large.

[0038] The heater 14d is provided in chamber 14a. The heater 14d heats the connecting element 2, for example, by heating the inside of chamber 14a to a temperature in the range of 250°C or more to 300°C or less, during isotropic pressurization by the piston 14c.

[0039] In the compression molding machine 14 configured as described above, the semi-finished product 22 and the medium 16 surrounding the semi-finished product 22 are housed in chamber 14a. Subsequently, the heater 14d heats the connecting element 2, while the piston 14c is isotropically pressurized the insulating substrate 3, the connecting element 2, and the semiconductor element 1, which are exposed by the positioning plate 11, via the medium 16 and the pocket element 13. This operating mode of the compression molding machine 14 is capable of sintering the connecting element 2, which has cavities reduced in diameter and a uniform coarse density, and is therefore able to join the semiconductor element 1 and the insulating substrate 3 together by sintering with high quality and at low cost.

[0040] After completion of the joining process, the semi-finished product 22 is removed from chamber 14a, the seal of the pocket element 13 is released, the structure body 21 and the positioning plate 11 are removed from the pocket element 13, the arrangement of the positioning plate 11 is released, and the structure body 21 is removed from the positioning plate 11. Subsequently, the structure body 21, i.e., the semiconductor element 1, the sealing element 2, and the insulating substrate 3, are subjected to various processes such as a wire joining process and a sealing process, so that the components in Fig. 1 illustrated semiconductor device is completed. <Zusammenfassung der ersten bevorzugten Ausführungsform>

[0041] Typically, when an organic solvent evaporates and is removed from a bonding element applied to an insulating substrate 3, the formation of voids in the bonding element can be suppressed. However, the adhesion of the bonding element's surface is reduced, making positional misalignment between a semiconductor element 1 and the insulating substrate 3 likely. In contrast, according to the first preferred embodiment, the decompression process (i.e., the suction process) of the pocket element 13 and the pressurization process are carried out in the chamber 14a, while the positional relationship between the semiconductor element 1 and the insulating substrate 3 is maintained by the positioning plate 11.This configuration is able to eliminate positional deviation between the semiconductor element 1 and the insulating substrate 3, and is therefore able to align the semiconductor element 1 with the insulating substrate 3 with improved accuracy. As a result, the quality of the semiconductor device can be improved, and the cost of the semiconductor device can be reduced.

[0042] In the first preferred embodiment, the piston 14c isotropically pressurizes the semiconductor element 1, the connecting element 2, and the insulating substrate 3, which are exposed by the positioning plate 11, via the medium 16 and the pocket element 13. This configuration is capable of forming the connecting element 2, which has cavities with reduced diameter and a uniform coarse density. As a result, the heat dissipation and electrical resistance of the semiconductor device can be uniformly designed, thus extending the connection lifetime of the semiconductor device. This configuration also eliminates the need to provide a protective element on the upper surface of the semiconductor element 1 and therefore reduces the manufacturing costs of the semiconductor device.

[0043] Although not illustrated, not only the semiconductor element 1, but also other components can be mounted on the connecting element 2, and the other components and the insulating substrate 3 can be positioned by the positioning plate 11 in a similar manner to that of the semiconductor element 1. By means of this configuration, the other electrical components are also able to produce advantageous effects similar to those of the first semiconductor element 1. The same applies to other embodiments. <modifikationen>

[0044] In the first embodiment, the medium 16 is a silicone oil, a fluorine-based active liquid, or the like; however, the present disclosure is not limited thereto. For example, the medium 16 can be an inert gas such as argon or nitrogen. This configuration eliminates the need to provide a mechanism for dispensing the liquid medium 16 in chamber 14a and therefore allows for a reduction in the cost of the compression molding machine 14. This configuration is also able to prevent the liquid medium 16 from entering the pocket element 13 and is therefore able to improve the quality of the semiconductor device. <Zweite bevorzugte Ausführungsform>

[0045] Fig. Figure 4 is a sectional view illustrating a process for manufacturing a semiconductor device according to a second preferred embodiment.

[0046] In the second preferred embodiment, steps (1) to (4) are carried out, which are similar to those in the first preferred embodiment with regard to Fig. 2 are described. A structural body 21 and a positioning plate 11 are therefore hermetically covered with a resin pocket 13a, as described in Fig. 4 illustrates. As in Fig. As illustrated in Figure 4, the structural body 21, the positioning plate 11, and the resin pocket 13a are next placed in another resin pocket 13b, and the resin pocket 13a is hermetically covered by the resin pocket 13b.

[0047] In the second preferred embodiment, a pocket element 13 corresponds to the two nested resin pockets 13a and 13b. A material for the respective resin pockets 13a and 13b is, for example, polytetrafluoroethylene (PTFE) with a heat resistance of 200°C or more and ductility, or the like. It should be noted that the pocket element 13 can correspond to three or more nested resin pockets. <Zusammenfassung der zweiten bevorzugten Ausführungsform>

[0048] According to the second preferred embodiment described above, the pocket element 13 corresponds to a plurality of nested resin pockets. This configuration is able to prevent the entry of a medium 16 into the pocket element 13 in a case where a semi-finished product 22, as in Fig. Figure 3 illustrates that it is surrounded by the medium 16, and is therefore able to improve the quality of the semiconductor device. <Dritte bevorzugte Ausführungsform>

[0049] Fig. Figure 5 is a sectional view illustrating a process for manufacturing a semiconductor device according to a third preferred embodiment. Specifically, the sections shown in Figure 5 correspond to the sections shown in Figure 5. Fig. 5 illustrated steps, each with steps (3) and (4), which in the first preferred embodiment with reference to Fig. 2 are described.

[0050] As in Fig. As illustrated in Figure 5, in the third preferred embodiment, a pocket element 13 comprises two or more metal foils 13c that are joined together. That is, the pocket element 13 does not necessarily have to have a pocket shape from the outset. A material with good thermal and electrical conductivity is used for the metal foils 13c. When joining the metal foils 13c together, for example, a heat-resistant adhesive 13d such as a silicone adhesive, an epoxy adhesive, or a polyimide adhesive can be used, or welding, high-temperature brazing, ultrasonic bonding, or the like can be used. <Zusammenfassung der dritten bevorzugten Ausführungsform>

[0051] According to the third preferred embodiment described above, the pocket element 13 contains two or more metal foils 13c bonded together. This configuration is capable of stably heating and cooling a semi-finished product 22 during, before, and after a process carried out using the compression molding machine 14, which is located in Fig. Figure 3 illustrates this, and it is therefore able to improve the quality of a connecting element 2 that undergoes heat treatment. This configuration is also able to suppress electrostatic destruction of a gate oxide layer and the like of a semiconductor element 1, which can occur when a resin pocket is used as the pocket element 13, and it is therefore able to reduce the cost of the semiconductor device. <Vierte bevorzugte Ausführungsform>

[0052] Fig. Figure 6 is a sectional view illustrating a process for manufacturing a semiconductor device according to a fourth preferred embodiment. Specifically, the following correspond to the sections shown in Figure 6. Fig. The 6 illustrated steps each with steps (1) and (2) as described in the first preferred embodiment with reference to Fig. 2 are described.

[0053] As in Fig. As illustrated in Figure 6, a positioning plate 11 is configured to maintain positional relationships between semiconductor elements 1 and insulating substrates 3 of a plurality of structural bodies 21. That is, a first positioning plate 11a has a plurality of recesses, and a second positioning plate 11b has a plurality of recesses and a plurality of through-holes. A manufacturing method according to the fourth preferred embodiment is similar to the manufacturing method according to the first preferred embodiment, except that the plurality of structural bodies 21 is integrated into the positioning plate 11. <Zusammenfassung der vierten bevorzugten Ausführungsform>

[0054] According to the fourth preferred embodiment described above, the positioning plate 11 maintains the positional relationships between the semiconductor elements 1 and the insulating substrates 3 of the plurality of structural bodies 21. This configuration is able to apply the manufacturing process described in the first preferred embodiment to the plurality of structural bodies 21 and is therefore able to increase productivity. <Fünfte bevorzugte Ausführungsform>

[0055] Fig. Figure 7 is a sectional view illustrating a configuration of a semiconductor device according to a fifth preferred embodiment. The in Fig. Figure 7 illustrates a semiconductor device comprising a semiconductor element 1, connecting elements 2a and 2b, an insulating substrate 3, a heat dissipation plate 5, a metal wire 6, a sealing element 9, and electrodes 10a and 10b.

[0056] The insulating substrate 3 comprises an insulating section 3a and a metal layer 3c, which is provided on an upper surface of the insulating section 3a. A material for the insulating section 3a can be, for example, an organic material such as an epoxy resin, a polyimide resin, an acrylic resin, or a polyphenylene sulfide (PPS) resin, or it can be, for example, an inorganic ceramic material such as aluminum oxide (Al₂O₃), aluminum nitride (Al₃N₄), or silicon nitride (Si₃N₄). A material for the metal layer 3c is, for example, copper, aluminum, an alloy thereof, or the like.

[0057] The heat dissipation plate 5 is mounted on the insulating substrate 3. The material for the heat dissipation plate 5 is similar to the material for the heat dissipation plate 5 according to the first preferred embodiment.

[0058] The semiconductor element 1 is mounted on the heat dissipation plate 5, with the connecting element 2a being inserted between the semiconductor element 1 and the heat dissipation plate 5. The material for the semiconductor element 1 is similar to that used for the semiconductor element 1 according to the first preferred embodiment.

[0059] The connecting element 2a connects the semiconductor element 1 and the heat dissipation plate 5. A material for the connecting element 2a is similar to the material for the connecting element 2 according to the first preferred embodiment.

[0060] The electrode 10a is mounted on the semiconductor element 1, with the connecting element 2b inserted between the electrode 10a and the semiconductor element 1. The electrode 10b is connected to the semiconductor element 1 via the metal wire 6. The material for the electrode 10a and the electrode 10b is similar to the material for the electrode 10 according to the first preferred embodiment. The material for the connecting element 2b is similar to the material for the connecting element 2 according to the first preferred embodiment. The material for the metal wire 6 is similar to the material for the metal wire 6 according to the first preferred embodiment.

[0061] The sealing element 9 seals an assembly of the aforementioned components as a body to be sealed. A material for the sealing element 9 is, for example, an insulating resin such as an epoxy resin. Although not illustrated, a control board, which is connected to the semiconductor element 1 by means of wiring, can be provided within the sealing element 9. <herstellungsverfahren>

[0062] Fig. Figure 8 is a top view and a sectional view illustrating a process for manufacturing the semiconductor device according to the fifth preferred embodiment. Fig. Figure 9 is a sectional view illustrating a process for manufacturing the semiconductor device according to the fifth preferred embodiment. Specifically, the following correspond in Fig. 8 illustrated steps, each with steps (1) and (2) as described in the first preferred embodiment with reference to Fig. 2 are described, and one in Fig. Step 9, illustrated, corresponds to step (4), which in the first embodiment refers to Fig. 2 is described.

[0063] In step (1), as in step (1) described in the first preferred embodiment, a connecting element containing an organic solvent and a metal powder such as silver or copper is applied to an upper surface of a heat dissipation plate 5 by a dispensing or printing process, and the organic solvent is volatilized and removed, forming a connecting element 2a containing the metal powder. Subsequently, a semiconductor element 1 is mounted on the connecting element 2a.Furthermore, a connecting element containing an organic solvent and a metal powder such as silver or copper is applied to an upper surface of the semiconductor element 1 by a dispensing process or a printing mask process, and the organic solvent is evaporated and removed, so that a connecting element 2b containing the metal powder is formed.

[0064] In step (2), the next step is as described in Fig. Figure 8 illustrates how the heat dissipation plate 5 is inserted into a recess of a first positioning plate 11a. The recess of the first positioning plate 11a is slightly larger than the outer shape of the heat dissipation plate 5. Next, a second positioning plate 11b, which has a through-hole slightly larger than the outer shape of the semiconductor element 1, is placed. A metal plate 10c, serving as electrodes 10a and 10b, is then mounted on the first positioning plate 11a and the connecting element 2b. A pin 11a1, provided on the first positioning plate 11a, is inserted into a hole formed in the metal plate 10c.

[0065] The second positioning plate 11b can be divided into a multitude of parts, as shown in the top view of Fig. Figure 8 illustrates this configuration. This configuration is able to facilitate the attachment and removal of the second positioning plate 11b to and from a section below the metal plate 10c.

[0066] The first positioning plate 11a and the second positioning plate 11b, described above, are able to maintain a positional relationship under the semiconductor element 1, the heat dissipation plate 5, and the metal plate 10c. Hereinafter, the composite structure of the first positioning plate 11a and the second positioning plate 11b can be referred to as a positioning plate 11.

[0067] In step (2) described above, a structural body 21, in which the connecting element 2a between the semiconductor element 1 and the heat dissipation plate 5 is provided, is partially enclosed by the positioning plate 11, and the semiconductor element 1, the connecting element 2a, and the heat dissipation plate 5 surrounding the connecting element 2a are free of the positioning plate 11. The positional relationship between the semiconductor element 1 and the heat dissipation plate 5 is therefore maintained. It should be noted that the material for the positioning plate 11 is similar to the material of the positioning plate 11 according to the first preferred embodiment.

[0068] In step (3), as in step (3) described in the first embodiment, the structural body 21 and the positioning plate 11 are placed in a pocket element 13, maintaining the positional relationship between the semiconductor element 1 and the heat dissipation plate 5.

[0069] In step (4), the next step is as described in Fig. Figure 9 illustrates how, in step (4) described in the first embodiment, the pocket element 13 is sealed, wherein the interior of the pocket element 13 is degassed and pressureless, so that a semi-finished product 22 is formed.

[0070] Then, using the in Fig. Figure 3 illustrates the compression molding machine 14, as in the first embodiment. In this configuration, the heater 14d heats the connecting element 2a while the piston 14c isotropically pressurizes the heat dissipation plate 5, the connecting element 2a, and the semiconductor element 1, which is exposed by the positioning plate 11, via a medium 16 and the pocket element 13. This configuration is capable of sintering the connecting element 2a, which has cavities reduced in diameter and a uniform coarse density, and is therefore able to join the semiconductor element 1 and the heat dissipation plate 5 together by sintering with high quality and low cost.

[0071] In the fifth preferred embodiment, not only the connecting element 2a but also the connecting element 2b is positioned, pressurized, and heated in a similar manner to that used for connecting element 2a. This configuration is capable of sintering connecting element 2b, which has cavities reduced in diameter and a uniform coarse density, and is therefore capable of joining the semiconductor element 1 and the metal plate 10c by sintering with high quality and at low cost.

[0072] After completion of the joining process, the semi-finished product 22 is removed from chamber 14a, the seal of the pocket element 13 is released, the structural body 21 and the positioning plate 11 are removed from the pocket element 13, the positioning plate 11 is detached, and the structural body 21 is removed from the positioning plate 11. Subsequently, the structural body 21, i.e., the semiconductor element 1, the connecting elements 2a and 2b, and the heat dissipation plate 5 are subjected to a wire joining process and a sealing process.

[0073] Fig. Figure 10 is a sectional view illustrating a sealing process, which is a process for manufacturing the semiconductor device according to the fifth preferred embodiment. As shown in Fig. As illustrated in Figure 10, after the heat dissipation plate 5, to which the semiconductor element 1 is connected, and the insulating substrate 3 have been placed in a cavity of a mold 23, a heat-resistant insulating resin 9a is poured into the cavity by a piston 24 before curing. Next, the heat-resistant insulating resin 9a is cured, sealing the semiconductor element 1 and the like, thus forming a sealing element 9. Subsequently, various processes are carried out, such as a cutting process to form the electrodes 10a and 10b from the metal plate 10c, so that the Fig. Figure 7 illustrates the semiconductor device being completed. <Zusammenfassung der fünften bevorzugten Ausführungsform>

[0074] According to the fifth preferred embodiment described above, a decompression process (i.e., a suction process) of the pocket element 13 and the pressurization process 14a are performed, while the positional relationship between the semiconductor element 1 and the heat dissipation plate 5 is maintained by the positioning plate 11. This configuration is able to prevent positional deviation between the semiconductor element 1 and the heat dissipation plate 5 and is therefore able to align the semiconductor element 1 with the heat dissipation plate 5 with improved accuracy. As a result, the quality of the semiconductor device can be improved, and the cost of the semiconductor device can be reduced.

[0075] According to the fifth preferred embodiment, the piston 14c isotropically pressurizes the semiconductor element 1, the connecting element 2a, and the heat dissipation plate 5, which are exposed by the positioning plate 11, via the medium 16 and the pocket element 13. This configuration is capable of forming the connecting element 2a, which has cavities with reduced diameter and a uniform coarse density. As a result, the heat dissipation and electrical resistance of the semiconductor device can be uniformly designed, thus extending the connection lifetime of the semiconductor device. This configuration also eliminates the need to provide a protective element on the upper surface of the semiconductor element 1 and therefore reduces the manufacturing costs of the semiconductor device.

[0076] According to the fifth preferred embodiment, not only the connecting element 2a, but also the connecting element 2b is positioned, pressurized, and heated in a manner similar to that used for connecting element 2a. This configuration is capable of performing the processing of connecting element 2b in parallel with the processing of connecting element 2a, and is therefore able to reduce the cost of manufacturing the semiconductor device.

[0077] It should be noted that each of the preferred embodiments and each of the modifications can be freely combined, and each of the preferred embodiments and each of the modifications can be modified or omitted as appropriate.

[0078] The following section describes various aspects of the present revelation together as supplementary remarks. (Supplementary Note 1)

[0079] comprising a method for manufacturing a semiconductor device: partially surrounded, with a positioning plate, a structural body in which a connecting element containing a metal powder is located between a semiconductor element and a base plate is provided, and exposing the semiconductor element, the connecting element, and the base plate around the connecting element from the positioning plate to maintain a positional relationship between the semiconductor element and the base plate; Placing the structural body and the positioning plate in a pocket element while maintaining the positional relationship; Sealing the pocket element while one inside of the pocket element is pressureless to form a semi-finished product; Placing the semi-finished product and a medium surrounding the semi-finished product in a chamber; and Heating the connecting element by means of a heater, while the semiconductor element, the connecting element, and the base plate, which are exposed by the positioning plate, are isotropically pressurized by means of a piston via the medium and the pocket element. (Supplementary Note 2)

[0080] Method for manufacturing a semiconductor device according to Supplementary Note 1, wherein the pocket element is a single resin pocket or a plurality of nested resin pockets. (Supplementary Note 3)

[0081] Method for manufacturing a semiconductor device according to Supplementary Note 1, wherein the pocket element contains two or more metal foils connected to each other. (Supplementary Note 4)

[0082] Manufacturing method for a semiconductor device according to one of the supplementary notes 1 to 3, wherein the positioning plate collectively maintains the positional relationships between the semiconductor elements and the base plates of a plurality of structural bodies. (Supplementary Note 5)

[0083] Manufacturing method for a semiconductor device according to one of the supplementary notes 1 to 4, wherein the base plate is at least one consisting of an insulating substrate, a heat dissipation plate, and a metal plate. (Supplementary Note 6)

[0084] Manufacturing method for a semiconductor device according to one of the supplementary notes 1 to 5, wherein a material for the positioning plate includes at least one made of a metal, a resin, or carbon. (Supplementary Note 7)

[0085] Manufacturing process for a semiconductor device according to one of the supplementary notes 1 to 6, wherein the medium is a silicone oil or an inert gas. (Supplementary Note 8)

[0086] Compression molding machine for applying pressure to a target product, the pressure application target product is formed by: Partially enclosing, with a positioning plate, a structural body in which a connecting element containing a metal powder is provided between a semiconductor element and a base plate, and exposing the semiconductor element, the connecting element, and the base plate around the connecting element from the positioning plate to maintain a positional relationship between the semiconductor element and the base plate; Placing the structural body and the positioning plate in a pocket element while maintaining the positional relationship; and Sealing the pocket element while one inside of the pocket element is pressureless, the compression molding machine has: a chamber in which the pressurization target product and a medium surrounding the pressurization target product are housed; a piston which isotropically pressurizes the semiconductor element, the connecting element, and the base plate, which are exposed by the positioning plate, via the medium and the pocket element; and a heater which heats the connecting element during isotropic pressure application by the piston.

[0087] While the revelation has been shown and described in detail, the preceding description is illustrative in all aspects and not limiting. It is therefore understood that numerous modifications and variations can be conceived.< / herstellungsverfahren> < / modifikationen> < / herstellungsverfahren>

Claims

[1] comprising a manufacturing process for a semiconductor device: • partial enclosure, with a positioning plate (11), a structural body (21) in which a connecting element (2, 2a, 2b) containing a metal powder is provided between a semiconductor element (1) and a base plate (3, 5, 10c), and exposure of the semiconductor element (1), the connecting element (2, 2a, 2b) and the base plate (3, 5, 10c) around the connecting element (2, 2a, 2b) from the positioning plate (11) in order to maintain a positional relationship between the semiconductor element (1) and the base plate (3, 5, 10c); • Placing the structural body (21) and the positioning plate (11) in a pocket element (13), maintaining the positioning relationship; • Sealing the pocket element (13) while one inside of the pocket element (13) is pressureless to form a semi-finished product (22); • Submerging, in a chamber, the semi-finished product (22) and a medium (16) which surrounds the semi-finished product (22); and • Heating the connecting element (2, 2a, 2b) by means of a heater (14d), while the semiconductor element (1), the connecting element (2, 2a, 2b) and the base plate (3, 5, 10c), which are exposed from the positioning plate (11), are isotropically pressurized by means of a piston (14c) via the medium (16) and the pocket element (13). [2] Manufacturing method for a semiconductor device according to claim 1, wherein the pocket element (13) is a single resin pocket or a plurality of nested resin pockets (13a, 13b). [3] Manufacturing method for a semiconductor device according to claim 1, wherein the pocket element (13) comprises two or more metal foils (13c) which are connected to each other. [4] Manufacturing method for a semiconductor device according to one of claims 1 to 3, wherein the positioning plate (11) collectively maintains the positional relationships between the semiconductor elements (1) and the base plates (3, 5, 10c) of a plurality of structural bodies (21). [5] Manufacturing method for a semiconductor device according to any one of claims 1 to 4, wherein the base plate (3, 5, 10c) is at least one consisting of an insulating substrate (3), a heat dissipation plate (5) and a metal plate (10c). [6] Manufacturing method for a semiconductor device according to any one of claims 1 to 5, wherein a material for the positioning plate (11) comprises at least one of a metal, a resin and carbon. [7] Manufacturing method for a semiconductor device according to any one of claims 1 to 6, wherein the medium (16) is a silicone oil or an inert gas. [8] Compression molding machine (14) for applying pressure to a target product, wherein • the pressure-applied target product is formed by: ◯ partial enclosure, with a positioning plate (11), a structural body (21) in which a connecting element (2, 2a, 2b) containing a metal powder is provided between a semiconductor element (1) and a base plate (3, 5, 10c), and exposure of the semiconductor element (1), the connecting element (2, 2a, 2b) and the base plate (3, 5, 10c) around the connecting element (2, 2a, 2b) from the positioning plate (11) in order to maintain a positional relationship between the semiconductor element (1) and the base plate (3, 5, 10c); • Placing the structural body (21) and the positioning plate (11) in a pocket element (13), maintaining the positioning relationship; and ◯ Sealing the pocket element (13) while one inside of the pocket element (13) is pressureless, • the compression molding machine features: ◯ a chamber (14a) in which the pressurization target product and a medium (16) surrounding the pressurization target product are housed; ◯ a piston (14c) which isotropically pressurizes the semiconductor element (1), the connecting element (2, 2a, 2b) and the base plate (3, 5, 10c), which are exposed by the positioning plate (11), via the medium (16) and the pocket element (13); and ◯ a heater (14d) which heats the connecting element (2, 2a, 2b) during isotropic pressure application by the piston (14c).

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