Multifunctional semiconductor device and electrical device with multifunctional semiconductor device

Abstract

A multifunctional semiconductor device (100) is described, comprising a semiconductor body (10) with at least two functional areas (31, 32, 33) and at least three electrical contact elements (21, 22, 23, 24) on at least one outer surface (28) of the semiconductor body (10) for electrically contacting the at least two functional areas (31, 32, 33, 34), wherein the at least two functional areas (31, 32, 33, 34) are monolithically integrated within the semiconductor body (10), the at least two functional areas (31, 32, 33, 34) have a first functional area (31) and a second functional area (32), the first functional area (31) is designed as a protective element against overvoltages, and the second functional area (32) is designed as a first sensor element for measuring at least one parameter.

Description

[0001] A multifunctional semiconductor device is described. In particular, a multifunctional semiconductor device is described that preferably provides a protective function, especially against overvoltages, for at least one other electronic device, as well as at least one sensor function with respect to at least one parameter of another electronic device and / or the environment. Furthermore, an electrical device incorporating the multifunctional semiconductor device is described.

[0002] For the safe operation of electronic components such as integrated circuits (ICs) and light-emitting diodes (LEDs), external protection against unwanted overvoltages is often required. These overvoltages can be caused, for example, by electrostatic discharges (ESD) or other interference, a phenomenon generally referred to as ESD protection. Therefore, it is common practice to mount an ESD protection element together with the electronic component to be protected in a housing or on another substrate.

[0003] Furthermore, for many applications, knowledge of one or more parameters of the electronic component and / or the environment may be desirable. For example, measuring the component temperature and / or the ambient temperature can be advantageous for achieving optimal power control. Additionally, some applications require a light sensor to control the emitted light power, for example, depending on the ambient light. Consequently, it may be necessary to install one or more discrete sensor components, such as a temperature sensor and / or a light sensor, in addition to an ESD protection element, which can lead to increased space requirements, greater complexity, and higher costs.

[0004] At least one function of certain embodiments is to specify a multifunctional semiconductor device. At least one function of further embodiments is to specify an electrical device with a multifunctional semiconductor device.

[0005] These problems are solved by the objects according to the independent claims. Advantageous embodiments and further developments of the objects are characterized in the dependent claims and are further described in the following description and drawings.

[0006] According to at least one embodiment, a multifunctional semiconductor device comprises a semiconductor body and electrical contact elements. The multifunctional semiconductor device can preferably be configured to have at least two functions, each of which is, in particular, an electrical, electronic, or optoelectronic function.

[0007] The multifunctional semiconductor device is particularly preferably formed essentially by the semiconductor body and the electrical contact elements. This can particularly mean that the at least two functions of the multifunctional semiconductor device are enabled exclusively or at least substantially by regions of the semiconductor body, which are therefore referred to below as functional regions, and a suitable electrical connection of the functional regions by means of the electrical contact elements. The semiconductor body is particularly preferably silicon-based. Alternatively, other semiconductor materials are also possible.

[0008] According to a further embodiment, the semiconductor body has at least two functional areas. For electrical contacting of the at least two functional areas, the multifunctional semiconductor device can have at least three electrical contact elements. Each of the functional areas is electrically contacted by means of at least two electrical contact elements. Here, at least two functional areas can, for example, also be contacted by the same electrical contact element. The at least three electrical contact elements can particularly preferably be formed by electrical contact surfaces, for example in the form of electrode layers, on an outer surface of the semiconductor body.Particularly preferred are all electrical contact elements of the multifunctional semiconductor device arranged on a bottom side of the semiconductor body, which allows the multifunctional semiconductor device to be mounted on a support such as a housing or a printed circuit board, so that the multifunctional semiconductor device can be mounted on a support and electrically connected using a surface mounting technique.

[0009] The semiconductor body can have internal conduction elements such as electrode layers, conductive traces, and / or electrical vias for the internal electrical interconnection of sub-regions of at least one of the functional areas. Particularly preferably, the semiconductor body can also be free of such conduction elements and, for example, be based entirely on or formed from a semiconductor material. Furthermore, the semiconductor body can have electrically insulating regions and / or layers, which are produced, for example, by suitable implantation, growth, and / or coating processes. Particularly preferably, the electrically insulating material of such electrically insulating regions and / or layers is also based on the semiconductor material of the semiconductor body.In the case of silicon as a semiconductor material, silicon oxide and / or silicon nitride, for example, can be suitable electrically insulating materials. Furthermore, a trench or trenches can be provided to isolate functional areas; these can be introduced into the semiconductor body in addition to or as an alternative to electrically insulating material. Such measures can be carried out, for example, using a process known as deep trenching.

[0010] The at least two functional regions are monolithically integrated within the semiconductor body. In other words, the functional regions are not formed by discrete components inserted into or mounted on the semiconductor body, but by one or more subregions of the semiconductor body itself. Specifically, each of the functional regions can have one or more subregions, each of which has a suitable doping. In other words, the at least two functional regions can be formed by doped subregions of the semiconductor body. Thus, one or more subregions can be present that are undoped or have n-type or p-type doping with a suitable doping concentration and one or more suitable dopants. Similarly, subregions with n-type doping, n-type doping, or p-type doping can be present. + -doping, of an n ++-doping, a p-doping, a p + -doping and / or a p ++ -Doping must be present. Due to the monolithic integration of all functions into the semiconductor body, the multifunctional semiconductor device can have an extremely small form factor. Particularly preferably, the multifunctional semiconductor device can have a volume of less than or equal to 0.01 mm². 3 exhibit.

[0011] According to another embodiment, the at least two functional areas have a first functional area and a second functional area. In other words, the semiconductor body can have at least a first and a second functional area.

[0012] The first functional area is particularly preferred as a protective element against overvoltages, i.e., as an ESD protection element. For example, the first functional area can be designed as a protection diode, such as a suppressor diode, perhaps in the form of a unidirectional or bidirectional TVS diode (TVS: "transient voltage suppressor").

[0013] Furthermore, the second functional area can be configured as a first sensor element. This first sensor element can be designed to measure at least one parameter, which could be, for example, temperature or light intensity. Accordingly, the first sensor element can be a temperature sensor or a light sensor.

[0014] Furthermore, the at least two functional areas can have a third functional area, and the third functional area can be designed as a second sensor element. For example, in this case, the first sensor element can be a temperature sensor and the second sensor element a light sensor.

[0015] A functional area configured as a temperature sensor can be either a PTC temperature sensor (PTC: "positive temperature coefficient") or an NTC temperature sensor (NTC: "negative temperature coefficient"), depending on the doping of one or more sub-areas. A functional area configured as a light sensor can, for example, be a photodiode and be used as an ambient light sensor or to measure the light power emitted by a light-emitting component.

[0016] Furthermore, the at least two functional areas can include at least one additional functional area, which may be configured, for example, as a passive electrical element. This passive electrical element could be, for instance, a resistor, which could be used as a series resistor. For example, a functional area configured as a temperature sensor and another functional area configured as a resistor could be connected to form a voltage divider circuit.

[0017] According to a further embodiment, an electrical device comprises a multifunctional semiconductor device and an electronic component. Preferably, at least the protection element of the multifunctional semiconductor device is interconnected with the electronic component. The multifunctional semiconductor device and the electronic component can preferably be mounted and interconnected on a common substrate such as a printed circuit board or a housing. The electronic component can, for example, be a light-emitting component such as a light-emitting diode or a laser diode. Furthermore, the electronic component can be an integrated circuit (IC).

[0018] The multifunctional semiconductor device described here combines overvoltage protection and sensor functions, such as temperature and / or light sensing, in a single, miniaturized element. Thanks to its at least two functional areas, this multifunctional semiconductor device can measure at least one parameter in addition to providing protection, thus eliminating the need for a separate sensor component. The miniaturized combination of functions within a single semiconductor device allows for placement in close proximity to the electronic component being protected and monitored.This results, for example, in a functional area of ​​the multifunctional semiconductor device used as a temperature sensor, in an advantageous minimization of the difference between the detected and actual component temperature, which can allow operation closer to the limit. In the case of a light-emitting electronic component, the small size of the multifunctional semiconductor device can prevent shading.

[0019] Further advantages, advantageous embodiments and further developments result from the exemplary embodiments described below in conjunction with the figures. Fig. 1A and Fig. Figure 1B shows schematic representations of a multifunctional semiconductor device according to an exemplary embodiment. Fig. 2A and Fig. Figure 2B shows schematic representations of a multifunctional semiconductor device according to a further embodiment. Fig. Figures 3A to 3D show schematic representations of a multifunctional semiconductor device and an electrical device according to further embodiments, as well as resistance measurements on samples of functional areas. Fig. Figures 4A to 4C show schematic representations of a multifunctional semiconductor device and an electrical device according to further embodiments. Fig. 5A and Fig. Figure 5B shows schematic representations of an electrical device according to a further embodiment.

[0020] In the exemplary embodiments and figures, identical, similar, or similarly functioning elements may be designated with the same reference numerals. The depicted elements and their relative sizes are not to be considered to scale; rather, individual elements, such as layers, components, building elements, and areas, may be exaggerated for clarity and / or better understanding.

[0021] In the Fig. 1A and Fig. 1B is a multifunctional semiconductor device 100 according to an exemplary embodiment, shown in a schematic sectional view and a three-dimensional inverted view looking at a bottom surface 28. The following description applies equally to the Fig. 1A and Fig. 1B.

[0022] The multifunctional semiconductor device 100 comprises a semiconductor body 10 and electrical contact elements 21, 22, 23, by means of which the multifunctional semiconductor device 100 can be contacted externally. The electrical contact elements 21, 22, 23 are formed by electrical contact surfaces, in particular in the form of electrode layers, on the outer surface of the semiconductor body 10 formed by the underside 28. For example, the electrical contact elements 21, 22, 23 can be formed by one or more metal layers applied to the semiconductor body 10. Suitable metals for this purpose include, for example, aluminum, silver, copper, gold, as well as alloys and mixtures with one or more of these metals. As shown in Fig. As shown in Figure 1B, all electrical contact elements of the multifunctional semiconductor device 100 are particularly preferably arranged on the underside 28 of the semiconductor body 10, which allows the multifunctional semiconductor device 100 to be mounted on a substrate such as a housing or a printed circuit board. This enables simple assembly and electrical contacting, for example by means of SMT (surface-mount technology).

[0023] The multifunctional semiconductor device 100 according to this embodiment as well as according to the embodiments described below has at least two functions, each of the at least two functions being, in particular, an electrical, electronic, or optoelectronic function. As shown, the multifunctional semiconductor device 100 is essentially formed by the semiconductor body 10 and the electrical contact elements 21, 22, 23. In other words, the functions of the multifunctional semiconductor device 100 are realized exclusively or at least essentially by functional areas 31, 32 of the semiconductor body 10 and a suitable electrical connection of these by means of the electrical contact elements 21, 22, 23. The Fig. 1A and Fig. The multifunctional semiconductor device 100 shown in Figure 1B has a semiconductor body 10 with two functional areas 31, 32. For electrical contacting the at least two functional areas 31, 32, the multifunctional semiconductor device 100 has three electrical contact elements 21, 22, 23, wherein each of the functional areas 31, 32 is contacted by the electrical contact element 21.

[0024] Preferably, the semiconductor body 10 is based on a semiconductor material such as silicon. Alternatively, other semiconductor materials are also possible.

[0025] Although the semiconductor body 10 may have internal conduction elements such as electrode layers, conductive traces, and / or electrical vias for the internal electrical interconnection of sub-regions of at least one of the functional regions 31, 32, the semiconductor body 10 is particularly preferably free of such conduction elements and formed entirely or substantially entirely by the semiconductor material. This may include the semiconductor body 10 also having electrically insulating regions and / or layers (not shown), for example, to separate the functional regions 31, 32 from each other within the semiconductor body 10 and / or to provide a protective coating on the semiconductor body 10.

[0026] The two functional areas 31, 32 are monolithically integrated within the semiconductor body 10, such that they are not formed by discrete components inserted into or mounted on the semiconductor body 10. Specifically, the functional areas 31, 32 are formed by one or more sub-areas of the semiconductor body 10 itself. That is, each of the functional areas 31, 32 comprises one or more sub-areas, each of which may be appropriately doped. In other words, the at least two functional areas 31, 32 can be formed by doped and / or undoped sub-areas of the semiconductor body 10. Due to the monolithic integration of all functions into the semiconductor body 10, the multifunctional semiconductor device 100 can have an extremely small form factor.The multifunctional semiconductor device 100 is particularly preferably able to have a length and width of less than or equal to 0.5 mm and a height of less than or equal to 0.2 mm and a volume of less than or equal to 0.05 mm. 3 and preferably of less than or equal to 0.01 mm 3 exhibit.

[0027] In the illustrated embodiment, the semiconductor body 10 has an n-doped region 51, on which, for example, a p-doped region 52 may be present in the form of a layer on the upper surface opposite the lower surface 28. Within the n-doped region 51, which has a base doping, subregions 11, 12, 13, 14, 15, 16 are provided, which have the same or a different doping as the base doping and which, depending on the embodiment, form the functional regions 31, 32, either alone or together. A different doping, which may mean, for example, a different dopant and / or a different dopant concentration, can be produced, for example, by suitable growth processes, in particular mask-based processes, and / or implantation techniques.

[0028] The one associated with the Fig. The structures of the functional areas shown in Figure 1B and the corresponding additional figures are not to be understood as limiting. Alternative configurations to the geometries and dopings shown are also possible in order to realize other functions and / or performance parameters.

[0029] In the Fig. 1A and Fig. In the embodiment shown in Figure 1B, the semiconductor body 10 has a first functional area 31 and a second functional area 32, wherein the first functional area 31 is designed as a protective element against overvoltages in the form of an ESD protection element. As shown in Figure 1B, the semiconductor body 10 has a first functional area 31 and a second functional area 32, wherein the first functional area 31 is designed as a protective element against overvoltages in the form of an ESD protection element. Fig. As indicated in 1A, the first functional area 31 is configured as a protection diode and, in particular, as a suppressor diode in the form of a bidirectional TVS diode. For this purpose, the n-doped area 51 with the base doping is in contact with electrical contact elements 21 and 22. +-doped sub-areas 11, 12 were introduced, which are separated from each other by a sub-area 13 with the basic doping.

[0030] The second functional area 32 is designed as a first sensor element. In the illustrated embodiment, the sensor element is a light sensor, as shown in Fig. 1A is indicated. The light sensor can, for example, be a photodiode and is designed, for example, as an ambient light sensor or for measuring the light power emitted by a light-emitting component. For this purpose, the second functional area 32, for example, has, as shown in Fig. 1B indicates a p + -doped area 14 in contact with the electrical contact element 23 and an n +The doped region 15 is in contact with the common electrical contact element 21, between which a sub-region 16 with the basic doping is arranged. Alternatively, other diode configurations are also possible.

[0031] By connecting the electrical contact elements 21 and 22 of the first functional area 31 with an electrical component, the latter can be protected from overvoltages, while a photodiode signal of the second functional area 32 can be tapped at the electrical contact elements 21 and 23 at the same time.

[0032] The figures described below show modifications and further developments of the exemplary embodiment of the Fig. 1A and Fig. Figure 1B is shown. Therefore, the following description is limited to differences from previous embodiments. Features not explicitly described may therefore be designed according to the previous description.

[0033] In the Fig. 2A and Fig. 2B is a multifunctional semiconductor device 100 according to a further embodiment shown, in which, in contrast to the embodiment of the Fig. 1A and Fig. 1B the second functional area 32, and thus the first sensor element, is designed as a temperature sensor. Depending on the doping of one or more sub-areas, the temperature sensor can be a PTC temperature sensor or an NTC temperature sensor. In the illustrated embodiment, an n-doped sub-area 17 is provided in the semiconductor body 10 in contact with the electrical contact elements 21 and 23, which allows a suitable temperature dependence of the electrical resistance measurable between the electrical contact elements 21, 23.

[0034] Furthermore, it may also be possible to provide a passive electrical element, for example an electrical resistor, by means of a suitable doping such as p-doping between the electrical contact elements 21 and 23, which can be used as a series resistor, as in connection with the Fig. 3A to 3D are shown in a corresponding further embodiment. The views of the Fig. 3A and Fig. 3B correspond to those in the Fig. 1A and Fig. 1B as well as in the Fig. 2A and Fig. Views shown in 2B. The semiconductor body 10 thus has a further functional region 34, which is formed by a subregion 18 with p-doping.

[0035] In this embodiment, the second functional area 32 is now formed between the electrical contact elements 22, 23, as in the previous embodiment. This means that the second functional area 32, configured as a temperature sensor, and the further functional area 34, configured as an electrical resistor, are connected to form a voltage divider circuit. Thus, in the Fig. In the multifunctional semiconductor component 100 shown in 3A and 3B, a series resistor advantageous for reading the temperature sensor is integrated into the multifunctional semiconductor component 100.

[0036] In Fig. Figure 3C shows resistance measurements on semiconductor samples using temperature sensors. The horizontal axis represents the sample number N, while the vertical axis represents the electrical resistance value R. Three measurements were performed on each of the samples N, resulting in the three graphs A, B, and C shown: Graph A represents the initial resistance measurements on all samples N at a temperature of 25°C. Graph B represents resistance measurements after heating the samples N to a temperature of 100°C. Graph C represents resistance measurements after subsequently cooling the samples N back to a temperature of 25°C. The near-complete overlap of graphs A and C indicates good reproducibility.

[0037] In Fig. In a 3D equivalent circuit diagram, an electrical device 1000 is shown, in which the [device] in conjunction with the Fig. 3A and Fig. The multifunctional semiconductor device 100 described in Figure 3B is interconnected with an electronic device 200 to enable a protective function through the first functional area 31 and simultaneously a temperature measurement through the second functional area 32 in conjunction with the further functional area 34. The electronic device 200 can, for example, be a light-emitting device such as a light-emitting diode or a laser diode. Furthermore, the electronic device 200 can be an integrated circuit (IC).

[0038] In the Fig. 4A to 4C are as described in the Fig. 3A, Fig. Figures 3B and 3D of the previous embodiment show schematic representations of the multifunctional semiconductor device 100 and the electrical device 1000 according to further embodiments. In comparison to the previously described embodiment, the semiconductor body 10 now additionally has a third functional area 33, which is configured as a second sensor element. For example, the second sensor element can be a light sensor, as in connection with the Fig. 1A and Fig. 1B is described. Accordingly, the semiconductor body 10 has doped sub-regions 14 and 15 which are in electrical contact with another electrical contact element 24 and the electrical contact element 21 and which together with the sub-region 16 form a photodiode.

[0039] Thus, in addition to the advantage of the benefits associated with the Fig. In the embodiments described in 3A to 3D, a light sensor is additionally integrated into the multifunctional semiconductor component 100, so that the electrical component 200 can be operated in a light intensity-controlled manner.

[0040] In the Fig. 5A and Fig. Figure 5B shows further embodiments of the electrical device 1000 in which the multifunctional semiconductor component 100 and the electrical component 200 are mounted and interconnected on a common carrier 300. The common carrier 300 can, for example, be a printed circuit board as shown in Figure 5B. Fig. 5A indicated or a housing like in Fig.5B is indicated. Due to the at least two functional areas of the multifunctional semiconductor device 100, at least one parameter can be measured with the same semiconductor device 100 that forms the protective element for the electronic component 200, thus eliminating the need for an additional sensor in the form of a separate component. The miniaturized combination of functions in a single element allows for placement very close to the electronic component 200 to be protected and monitored, resulting in little to no shadowing from the multifunctional semiconductor device 100. The electronic component 200 can therefore be protected against overvoltages and simultaneously operated with temperature and / or light intensity control.

[0041] The features and embodiments described in connection with the figures can be combined with one another according to further embodiments, even if not all combinations are explicitly described. Furthermore, the embodiments described in connection with the figures can alternatively or additionally include further features as described in the general section.

[0042] The invention is not limited to the description provided by means of the exemplary embodiments. Rather, the invention encompasses every new feature as well as every combination of features, which in particular includes every combination of features in the claims, even if that feature or combination itself is not explicitly stated in the claims or exemplary embodiments. Reference symbol list 10 semiconductor bodies 11, 12, 13, 14 Sub-area 15, 16, 17, 18 Sub-area 21, 22, 23, 24 Contact element 28 Underside 31, 32, 33 functional area 41 functional area 51 n-doped area 52 p-doped area 100 Multifunctional semiconductor components 200 electronic components 300 carriers 1000 electrical devices A, B, C Graph

Claims

[1] Multifunctional semiconductor component (100), comprising - a semiconductor body (10) with at least two functional regions (31, 32, 33), - at least three electrical contact elements (21, 22, 23, 24) on at least one outer side (28) of the semiconductor body (10) for electrically contacting the at least two functional regions (31, 32, 33, 34), wherein - the at least two functional regions (31, 32, 33, 34) are monolithically integrated within the semiconductor body (10), - the at least two functional areas (31, 32, 33, 34) have a first functional area (31) and a second functional area (32), - the first functional area (31) is designed as a protective element against overvoltages and - the second functional region (32) is designed as a first sensor element for measuring at least one parameter. [2] Multifunctional semiconductor component (100) according to claim 1, wherein the at least two functional regions (31, 32, 33, 34) comprise doped partial regions (11, 12, 13, 14, 15, 16, 17) of the semiconductor body (10). [3] Multifunctional semiconductor device (100) according to claim 1 or 2, wherein the first sensor element is a light sensor. [4] Multifunctional semiconductor device (100) according to claim 1 or 2, wherein the first sensor element is a temperature sensor. [5] Multifunctional semiconductor component (100) according to claim 1 or 2, wherein the at least two functional regions (31, 32, 33, 34) have a third functional region (33) and the third functional region (33) is designed as a second sensor element. [6] Multifunctional semiconductor device (100) according to claim 5, wherein the first sensor element is a temperature sensor and the second sensor element is a light sensor. [7] Multifunctional semiconductor device (100) according to claim 3 or 6, wherein the light sensor is a photodiode. [8] Multifunctional semiconductor component (100) according to one of claims 4 to 6, wherein the temperature sensor is a PTC temperature sensor or an NTC temperature sensor. [9] Multifunctional semiconductor component (100) according to one of the preceding claims, wherein the at least two functional regions (31, 32, 33, 34) have at least one further functional region (34) which is designed as a passive electrical element. [10] Multifunctional semiconductor device (100) according to claim 9, wherein the passive electrical element is a resistor. [11] Multifunctional semiconductor component (100) according to claim 10, wherein the temperature sensor and the resistor are connected to form a voltage divider circuit. [12] Multifunctional semiconductor component (100) according to one of the preceding claims, wherein the semiconductor body (10) is based on silicon. [13] Multifunctional semiconductor component (100) according to one of the preceding claims, wherein all electrical contact elements (21, 22, 23, 24) of the multifunctional semiconductor component (100) are arranged on an underside (28) of the semiconductor body (10). [14] Multifunctional semiconductor component (100) according to one of the preceding claims, wherein the multifunctional semiconductor component (100) has a volume of less than or equal to 0.01 mm 3 has. [15] Electrical device (1000), comprising - a multifunctional semiconductor component (100) according to one of the preceding claims and - an electronic component (200), wherein - at least the protective element of the multifunctional semiconductor component (100) is connected to the electronic component (200).

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