Three-level power semiconductor module and arrangement thereof

Abstract

Three-level power semiconductor module (1) with a housing (2), preferably frame-like, with a switching device (3), with a first, a second and a third DC voltage connection element (40, 42, 44), and with an AC voltage connection element (50) wherein the respective connection surfaces (400, 420, 440) of the DC connection elements (40, 42, 44) have the same normal direction (N), are arranged next to each other in projection in normal direction (N) and wherein the third contact surface (440) of the third DC connection element (44) lies in a first plane (E1) and the second contact surface (420) of the second DC connection element (42) is considered in the normal direction (N) in a second plane (E2) parallel to the first, wherein the first contact surface (400) of the first DC connection element (40) is considered in the normal direction (N) in a third plane (E3) parallel to the first and second respectively.

Description

[0001] The invention describes a three-level power semiconductor module comprising a housing, preferably frame-like, a switching device, a first, a second, and a third DC voltage connection element, and an AC voltage connection element, wherein the respective connection surfaces of the DC voltage connection elements have the same normal direction and are arranged next to each other in projection in the normal direction. The invention further describes an arrangement comprising a plurality of such three-level power semiconductor modules.

[0002] DE 10 2017 115 883 A1 discloses a submodule and an arrangement thereof, wherein the submodule comprises a switching device with a substrate and conductive traces arranged thereon. The submodule has a first and a second DC voltage conductive trace and, electrically connected thereto, a first and a second DC voltage connection element, as well as an AC voltage conductive trace and, electrically connected thereto, an AC voltage connection element. The submodule further comprises an insulating body that encloses the switching device in a frame-like manner. The first DC voltage connection element rests with a first contact section on a first support body of the insulating body, and the AC voltage connection element rests with a second contact section on a second support body of the insulating body.A first clamping device is configured to extend, electrically insulated, through a first recess of the first support body and to form an electrically conductive clamping connection between the first DC voltage connection element and an associated first DC voltage connection element, and a second clamping device is configured to extend, electrically insulated, through a second recess of the second support body and to form an electrically conductive clamping connection between the AC voltage connection element and an associated AC voltage connection element.

[0003] DE 10 2018 112 552 A1 discloses an assembly and a power semiconductor device. The assembly comprises a plastic molded body and a plurality of load connection elements of the power semiconductor device, wherein each load connection element is designed as a planar metal molded body with a first and a second main surface opposite it, and with a first and a second secondary surface opposite it, wherein these secondary surfaces connect the main surfaces, and with a connection section, wherein the plastic molded body forms a plurality of grooves 20 and for this purpose has a base body, a first and a second edge body and a separating body, wherein each load connection element is arranged in an associated groove with at least a substantial section without being materially bonded.that the first and second main surfaces and the first secondary surface face the inside of the channel and wherein the height of the separating body is greater than the width of the adjacent load connection element which has the smaller width.

[0004] DE 10 2020 111 528 A1 discloses a power electronic arrangement with a plurality of single-phase power semiconductor modules and with a multi-phase power semiconductor module, wherein the respective single-phase power semiconductor module has a first housing of at least a frame-like nature, two first DC voltage connection elements, a first AC voltage connection element, first auxiliary connection elements and a first switching device, wherein the multi-phase power semiconductor module has a second housing of at least a frame-like nature, two second DC voltage connection elements, at least two second AC voltage connection elements, second auxiliary connection elements and a second switching device, wherein the first and second DC voltage connection elements each form a stack in a section of their path and at the connection sections and are of the same design.wherein all power semiconductor modules are arranged in a row in the direction of the normal vectors of their respective first long sides and wherein the first and second DC voltage terminal elements of all power semiconductor modules are arranged on the same, the first, narrow side.

[0005] In light of the aforementioned prior art, the invention is based on the objective of presenting a three-level power semiconductor module with three DC connection elements.

[0006] This problem is solved according to the invention by a three-level power semiconductor module with a housing, preferably frame-like, with a switching device, with a first, a second and a third DC voltage connection element, and with an AC voltage connection element, wherein the respective connection surfaces of the DC voltage connection elements have the same normal direction, are arranged next to each other in projection in the normal direction, and wherein the third connection surface of the third DC voltage connection element lies in a first plane and the second connection surface of the second DC voltage connection element lies in a second plane parallel to the first when viewed in the normal direction, and wherein the first connection surface of the first DC voltage connection element lies in a third plane parallel to the first and second planes when viewed in the normal direction.

[0007] It is preferred if all connecting surfaces lie next to each other in projection in the normal direction, but not in series.

[0008] It can be advantageous if a first conductor section of the first DC connection element, immediately adjacent to the first connection surface, is at least partially aligned with the third connection surface of the third DC connection element in the normal direction. Thus, the first and third DC connection elements form a stack in this area. It can also be advantageous if a second conductor section of the second DC connection element, immediately adjacent to the second connection surface, is at least partially aligned with the third connection surface of the third DC connection element in the normal direction. Thus, the second and third DC connection elements also form a stack in this area.

[0009] It may be preferred if all DC voltage connection elements are arranged on a first narrow side of the housing. It is particularly preferred if, in addition, the AC voltage connection element is arranged on a second narrow side of the housing.

[0010] It is particularly advantageous if the DC voltage connection elements and the AC voltage connection element are designed as metal foil or metal sheet, with a thickness of preferably 300µm to 2000µm, particularly preferably 500µm to 1500µm.

[0011] It can be advantageous if the housing has on its first narrow side a first and a second support surface each for the first and second DC voltage connection element and a third support surface for the third DC voltage connection element.

[0012] Furthermore, it may be preferable if a centrally arranged mounting recess extends through the switching device.

[0013] In a first embodiment, it may be advantageous if the first DC connection element is provided to be connected to a high potential, the second DC connection element is provided to be connected to a low potential, and the third DC connection element is provided to be connected to an intermediate potential.

[0014] In a second embodiment, it may be advantageous if the first DC connection element is provided to be connected to a high potential, the third DC connection element is provided to be connected to a low potential, and the second DC connection element is provided to be connected to an intermediate potential.

[0015] In a third embodiment, it may be advantageous if the second DC connection element is provided to be connected to a high potential, the third DC connection element is provided to be connected to a low potential, and the first DC connection element is provided to be connected to an intermediate potential.

[0016] The problem is further solved by a power electronic arrangement with a plurality of the above-mentioned three-level power semiconductor modules, wherein all three-level power semiconductor modules are arranged next to each other in a row with their long sides and wherein preferably the DC connection elements of all power semiconductor modules are also arranged in a row.

[0017] It can be advantageous if all respective DC connection elements are connected in the correct polarity to common, respective assigned DC supply elements of a DC supply device.

[0018] It may be preferable for all three-level power semiconductor modules to share a common driver. It may be advantageous if each of the three-level power semiconductor modules is at least partially covered by the driver.

[0019] It is understood that the various embodiments of the invention can be implemented individually or in any combination to achieve improvements. In particular, the features mentioned and explained above and below can be used not only in the combinations specified, but also in other combinations or individually, without departing from the scope of the present invention and regardless of whether they are disclosed within the context of the three-level power semiconductor module or the arrangement.

[0020] Further explanations of the invention, advantageous details and features, will become apparent from the following description of the invention contained in the Fig. 1 to 7 schematically illustrated embodiments of the invention, or of respective parts thereof. Fig. 1 and Fig. Figure 2 shows sections of the DC connection elements and a housing of a three-level power semiconductor module. Fig. Figure 3 shows this three-level power semiconductor module in a three-dimensional view. Fig. Figure 4 shows a top view of this three-level power semiconductor module. Fig. Figure 5 shows an arrangement thereof. Fig. Figure 6 shows a section of the DC connection elements and a housing of a three-level power semiconductor module according to the invention. Fig. Figure 7 shows this three-level power semiconductor module according to the invention in a three-dimensional view.

[0021] Fig. 1 and Fig. Figure 2 shows sections of the DC connection elements and a housing of a three-level power semiconductor module in three orthogonal views. Fig. Figure 1 shows, for the sake of clarity, only a part of the housing 2 and only one DC voltage connection element 42, whose connection surface 420 defines a normal direction N. Fig. Figure 2 shows all DC connection elements 40, 42, 44, whose connection surfaces 400, 420, 440 all have the same normal direction N (here the z-direction), as does the associated housing 2.

[0022] In each case, the section view above the top view follows line BB, and the section view next to the top view follows line AA.

[0023] The housing 2 is designed as an insulating material, in particular a plastic housing, and has on its first narrow side 20, cf. Fig. 3 or Fig. 5, each with a first and a second support surface 200, 220. The first DC voltage connection element 40 is arranged on the first support surface 200 and the second DC voltage connection element 42 is arranged on the second support surface 220, these support surfaces 200, 220 also being oriented in the normal direction N. The first and second DC voltage connection elements 40 and 42 are each arranged on one of these support surfaces 200, 220. Their respective connection surfaces 400, 420 thus lie in a second plane E2 and are arranged side by side there.

[0024] The housing 2 further comprises a third support surface 240 for the third DC voltage connection element 44, this third support surface 240 also being oriented in the normal direction N. The third DC voltage connection element 44 rests on this third support surface 240, so that its third connection surface 440 is also oriented in the normal direction N. Thus, all connection surfaces 400, 420, 440 of the DC voltage connection elements 40, 42, 44 are oriented in the normal direction N. In addition, the support surface 240 of the third DC voltage connection element 44 is set back in the negative y-direction and arranged in a first plane E1 to the second parallel plane E2, which is arranged in the negative normal direction N, and thus also in the negative z-direction, above the second plane E2.Due to this design of the housing 2 and this arrangement of the DC connection elements 40,42,44, all three connection surfaces 400,420,440 of the three DC connection elements 40,42,44 lie next to each other, but not in a row.

[0025] Thus, a first conductor section 402 of the first DC voltage connection element 40, immediately adjoining the first connection surface 400, aligns section by section with the third connection surface 440 of the third DC voltage connection element 44 in the normal direction N. Simultaneously and symmetrically to this, a second conductor section 422 of the second DC voltage connection element 42, immediately adjoining the second connection surface 420, aligns section by section with the third connection surface 440 of the third DC voltage connection element 44 in the normal direction N.

[0026] This design results in a low-inductance design for both the combination of the first and third DC connection element 40,44 and the combination of the second and third DC connection element 42,44.

[0027] Naturally, the housing 2 or additional insulating elements in conjunction with the housing 2 are designed in such a way that the respective DC connection elements are arranged to be sufficiently electrically isolated from each other.

[0028] Fig. Figure 3 shows this three-level power semiconductor module in a three-dimensional schematic view. A substantially cuboid-shaped housing 2 is depicted, with all DC voltage connection elements 40, 42, 44 arranged on its first narrow side 20, while the AC voltage connection element 50 is arranged on a second narrow side 22. This design allows for a very space-saving arrangement of several three-level power semiconductor modules side by side, cf. Fig. 5.

[0029] The specific design and arrangement of the DC connection elements 40, 42, 44 corresponds to that according to Fig. 2.

[0030] The DC terminal elements 40,42,44 and the AC terminal element 50 of this three-level power semiconductor module are designed as sheet metal with a thickness of 1mm.

[0031] Fig. Figure 4 shows a schematic top view of this three-level power semiconductor module. The switching device inside the housing 2 is shown purely for illustrative purposes and without any detailed design. Its electrical connection is provided by the terminals shown in Fig. The AC 50 and DC voltage connection elements 40, 42, 44 described in section 3 are used for controlling the switching device. Auxiliary connection elements arranged on a longitudinal side 20, 22 of the housing 2 and protruding from it in the normal direction N serve to control the switching device; these auxiliary connection elements are designed in particular as control connection elements.

[0032] A three-level power semiconductor module typically has three different DC potentials: a high potential, a low potential, and an intermediate potential. The high and low potentials can be equal in magnitude but opposite in sign, while the intermediate potential can be at the base potential. These three potentials can be connected to any of the DC terminal elements 40, 42, and 44.

[0033] Fig. Figure 5 shows an arrangement in which three three-level power semiconductor modules 1 are arranged side by side with their long sides 24. The DC connection elements 40, 42, 44 of all three-level power semiconductor modules 1 are arranged on the same, first, narrow side 20.

[0034] Also shown are three DC supply elements 80, 82, 84, which are arranged in a section-by-section stack and form the DC supply line 8 of a capacitor assembly (not shown). For clarity, the DC supply elements 80, 82, 84 are spaced apart from the three-level power semiconductor modules 1. Each DC supply element 80, 82, 84 is connected with correct polarity to its respective associated DC terminal element 40, 42, 44.

[0035] Naturally, both the DC connection elements 40,42,44 and the DC supply line elements 80,82,84 have an insulation device 60,88 for the electrical isolation of the elements of different polarity.

[0036] Furthermore, two of the DC voltage supply elements 82, 84 have recesses designed and intended to allow a laser beam acting from the negative normal direction N to act on a DC voltage supply element 80, 82 arranged below. A laser weld connection of this type creates a permanent, metallurgical bond between each DC voltage supply element 82, 84 and its associated DC terminal element 42, 44.

[0037] Each three-level power semiconductor module 1 further comprises auxiliary connection elements 72, each arranged along one or both longitudinal sides 24. These auxiliary connection elements 72 serve as the electrically conductive connection to a driver device 70 common to all power semiconductor modules 2, 4. This driver device partially covers all three-level power semiconductor modules 1.

[0038] Each of the components 1 has a centrally arranged mounting recess 6 that extends through the switching device and further components following in the normal direction N. In this mounting recess 6, a section of a fastening device 60, in particular a screw, is arranged, which fixes the respective three-level power semiconductor module 1 to a cooling device (not shown), preferably a liquid cooling device.

[0039] Fig. Figure 6 shows a section of the DC voltage connection elements 40, 42, 44 and a housing 2 of a three-level power semiconductor module 1 according to the invention, the respective views being as shown in Fig. 2 are selected. A significant difference from the first embodiment is the fully stacked arrangement of the DC voltage connection elements 40, 42, 44, whereby each of the respective assigned connection surfaces 400, 420, 440 lies on its own level E1, E2, E3.

[0040] Thus, the first connection surface 400 of the first DC voltage connection element 40, viewed in the normal direction N, lies in the third plane E3, which is parallel to the first and second planes. Likewise, all connection surfaces 400, 420, 440 lie side by side in a row when projected in the normal direction N.

[0041] This causes a second conductor section 422 of the second DC voltage connection element 42, immediately adjoining the second connection surface 420, to align section by section in the normal direction N with the third connection surface 440 of the third DC voltage connection element 44. Likewise, a conductor section 402 of the first DC voltage connection element 40, immediately adjoining the first connection surface 400, align section by section in the normal direction N with the second connection surface 420 of the second DC voltage connection element 42. A conductor section 442 of the third DC voltage connection element 44, immediately adjoining the third connection surface 440, aligns section by section in the normal direction N with the first and second conductor sections 402, 422 of the first and second DC voltage connection elements 42.

[0042] Fig. Figure 7 shows this three-level power semiconductor module 1 according to the invention in a three-dimensional view. A substantially cuboid housing 2 is shown, with all DC voltage connection elements 40, 42, 44 arranged on its first narrow side 20, while the AC voltage connection element 50 is arranged on a second narrow side 22. The specific design and arrangement of the DC voltage connection elements 40, 42, 44 corresponds to that shown in Figure 7. Fig. 6.

[0043] In this second embodiment of the three-level power semiconductor module 1, it is preferred, but not necessary, if the intermediate potential is provided for this purpose to be connected to the second DC voltage connection element 42.

Claims

[1] Three-level power semiconductor module (1) with a housing (2), preferably frame-like, with a switching device (3), with a first, a second and a third DC voltage connection element (40, 42, 44), and with an AC voltage connection element (50) wherein the respective connection surfaces (400, 420, 440) of the DC connection elements (40, 42, 44) have the same normal direction (N), are arranged next to each other in projection in normal direction (N) and wherein the third contact surface (440) of the third DC connection element (44) lies in a first plane (E1) and the second contact surface (420) of the second DC connection element (42) is considered in the normal direction (N) in a second plane (E2) parallel to the first, wherein the first contact surface (400) of the first DC connection element (40) is considered in the normal direction (N) in a third plane (E3) parallel to the first and second respectively. [2] Three-level power semiconductor module according to claim 1, wherein all connection surfaces (400, 420, 440) are located next to each other in projection in the normal direction (N), but not in series. [3] Three-level power semiconductor module according to one of the preceding claims, wherein a first conductor section (402) of the first DC terminal element (40) immediately adjoining the first terminal surface (400) is aligned at least partially in the normal direction (N) with the third terminal surface (440) of the third DC terminal element (44). [4] Three-level power semiconductor module according to one of the preceding claims, wherein a second conductor section (422) of the second DC terminal element (42) immediately adjoining the second terminal surface (420) is aligned at least partially in the normal direction (N) with the third terminal surface (440) of the third DC terminal element (44). [5] Three-level power semiconductor module according to one of the preceding claims, wherein all DC connection elements (40, 42, 44) are arranged on a first narrow side (20) of the housing (2). [6] Three-level power semiconductor module according to one of the preceding claims, wherein the AC voltage connection element (50) is arranged on a second narrow side (22) of the housing (2). [7] Three-level power semiconductor module according to one of the preceding claims, wherein the DC voltage connection elements (40, 42, 44) and the AC voltage connection element (50) are formed as metal foil or metal sheet, with a thickness of preferably 300µm to 2000µm, particularly preferably 500µm to 1500µm. [8] Three-level power semiconductor module according to one of the preceding claims, wherein the housing (2) has on its first narrow side (20) a first and a second support surface (200,220) each for the first and second DC connection element (40,42) and a third support surface (240) for the third DC connection element (44). [9] Three-level power semiconductor module according to one of the preceding claims, wherein a centrally arranged mounting recess (6) extends through the switching device. [10] Three-level power semiconductor module according to any one of claims 1 to 9, wherein the first DC voltage connection element (40) is provided to be connected to a high potential, wherein the second DC voltage connection element (42) is provided to be connected to a low potential and wherein the third DC voltage connection element (44) is provided to be connected to an intermediate potential. [11] Three-level power semiconductor module according to any one of claims 1 to 9, wherein the first DC voltage connection element (40) is provided to be connected to a high potential, wherein the third DC voltage connection element (44) is provided to be connected to a low potential and wherein the second DC voltage connection element (42) is provided to be connected to an intermediate potential. [12] Three-level power semiconductor module according to any one of claims 1 to 9, wherein the second DC voltage connection element (42) is provided to be connected to a high potential, wherein the third DC voltage connection element (44) is provided to be connected to a low potential and wherein the first DC voltage connection element (40) is provided to be connected to an intermediate potential. [13] Power electronic arrangement (10) comprising a plurality of three-level power semiconductor modules according to any one of the preceding claims, wherein all three-level power semiconductor modules (1) are arranged side by side in a row with their long sides (24) and wherein preferably the DC connection elements (40,42,44) of all power semiconductor modules (1) are also arranged in a row. [14] Power electronic arrangement according to claim 13, wherein all respective DC connection elements (40, 42, 44) are connected in a polarity-correct manner to common, respective associated DC supply elements (80, 82, 84) of a DC supply device (8). [15] Power electronic arrangement according to one of claims 13 or 14, wherein all three-level power semiconductor modules (1) have a common driver device (70). [16] Power electronic arrangement according to claim 15, wherein each of the three-level power semiconductor modules (1) is at least partially covered by the driver device (70).

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