MEMS DEVICE WITH ADJUSTING AND / OR SETTING FUNCTION

Abstract

The present disclosure relates to a MEMS device, in particular a vacuum-packed MEMS mirror device, and to a layer structure for such a MEMS device. The MEMS device comprises a frame structure 110 and a retaining and spring structure connected to the frame structure 110, which holds the movable element 170 movable relative to the frame structure 110 with respect to at least one axis A1, in particular pivotable about the at least one axis A1. The retaining and spring structure comprises at least one positioning section 181 with an actuator 601 configured to generate a static, quasi-static, and / or dynamic translational and / or rotational displacement, in particular positioning movement, of at least a part of the retaining and spring structure relative to the frame structure 110.

Description

[0001] The present disclosure relates to a MEMS device, in particular a MEMS mirror device. In particular, the present disclosure relates to such a MEMS device, in particular having a layer structure, a layer structure for such a MEMS device, and / or a method for producing such a MEMS device and / or such a layer structure for such a MEMS device. background

[0002] A generic MEMS device or a generic layer structure for a MEMS device is known, for example, from US 2009 / 0185253 A1, in particular a piezoelectrically driven MEMS device, as well as a generic method for producing a layer structure for such a MEMS device.

[0003] Other generic MEMS devices with corresponding layer structure and corresponding manufacturing processes are known, for example, from the following documents: The article “2D Scanning Micromirror with Large Scan Angle and Monolithically Integrated Angle Sensors Based on Piezoelectric Thin Film Aluminum Nitride” by K. Meinel et al, November 18, 2020, Sensors 2020, Vol. 20, 6599, describes resonantly piezoelectrically driven 2D micromirror devices for various applications, such as LIDAR scanners and laser scanner projectors.

[0004] The article “AlScN Piezoelectric MEMS Mirrors with Large Field of View for LiDAR Application” by Y. Liu et al, September 18, 2022, Micromachines 2022, Vol. 13, 1550, describes resonantly piezoelectrically driven 2D micromirror devices for various applications, such as LIDAR scanners.

[0005] The doctoral thesis "Development, Fabrication, and Characterization of Piezoelectric Micromirrors" by S. Gu-Stoppel, 2016, Books on Demand, Norderstedt, ISBN: 9783739239583, describes the background to the development of piezoelectrically driven 1D and 2D micromirrors for various applications, such as laser image projection. Several designs for different 1D and 2D micromirrors are presented and discussed.

[0006] US 2020 / 0386985 A1 describes 2D micromirror devices for various applications, such as LIDAR scanners.

[0007] US 2005 / 0099665 A1 describes a single-axis driven optical scanner comprising a substrate, a section which is spaced a predetermined height from the substrate and on the upper side of which an optical scanning surface is formed, a plurality of first drive comb electrodes extending from opposite sides of the section, and a first armature spaced a predetermined distance from the opposite sides of the section and fixed to the substrate and having a plurality of first fixed comb electrodes arranged on one side thereof alternately with the first drive comb electrodes, wherein at least one first bending spring is connected to one end.At a central portion of each of the other opposite sides of the portion, an inertia portion is arranged at a predetermined distance above the substrate, in which the other end of the first bending spring is connected to a central portion of one side thereof and a second armature is fixed on the substrate on opposite sides of the first armature, a second bending spring connecting the inertia portion and the second armature, and an inertia portion pulling unit for pulling the inertia portion in a direction opposite to the first bending spring.

[0008] US 2012 / 0275000 A1 describes an optical scanning device comprising: an oscillating mirror that reflects incident light; a first beam unit coupled to one end of the oscillating mirror; a second beam unit coupled to another end of the oscillating mirror; a first drive unit coupled to the first beam unit, disposed between the first beam unit and the first adjustment unit, and oscillating the oscillating mirror; and a first adjustment unit coupled to the first drive unit and adjusting a modulus of elasticity of the first beam unit by elastically deforming the first beam unit.

[0009] DE 10 2007 001 516 B3 describes a micromechanical component comprising an oscillation system having an oscillating body and an elastic suspension by means of which the oscillating body is suspended in a manner capable of oscillating. The elastic suspension has at least two spring beams. Furthermore, a device is provided for adjusting a resonant frequency of the oscillation system by changing the relative position of the at least two spring beams of the elastic suspension.

[0010] US 11,296,671 B2 describes a microelectromechanical system having at least one partially movable mass element suspended from a fixed support via one or more suspension units. Each suspension unit comprises first springs extending from the fixed support to the partially movable mass element and second springs also extending from the fixed support to the partially movable mass element. Each second spring is substantially parallel and adjacent to a first spring. The first springs are electrically isolated from the second springs, and the microelectromechanical system comprises a voltage source configured to apply a frequency-tuning voltage between the one or more first springs and the one or more second springs.

[0011] CN 110 040 680 A describes a MEMS microgravity sensor chip comprising a monocrystalline silicon substrate, a silicon dioxide insulating layer grown on the monocrystalline silicon substrate, a monocrystalline silicon structural layer bonded to the silicon dioxide insulating layer, and a MEMS acceleration sensor chip. The MEMS acceleration sensor chip comprises a chip frame, and four corners of the chip frame are each provided with a group of electrode anchor points. An electric heating drive unit consisting of V-shaped beams is connected between each group of electrode anchor points. The V-shaped beams are connected to a center arm, and the center arm is connected to a ground block via a limiting self-locking mechanism and a spring. The limiting self-locking mechanism is coordinated with the chip frame.With the exception of the electrode anchor points and the chip frame, the monocrystalline silicon substrate and the silicon dioxide insulating layer beneath the remaining part are corroded. An electrothermal effect is used to apply an axial displacement load to the spring.

[0012] US 2014 / 0049804 A1 describes a mirror device comprising a plurality of beams supporting a mirror portion, the mirror portion having a mirror on one surface, and the beams being driven in a torsional direction to cause the mirror portion to oscillate at a predetermined resonant frequency, thermally deformable materials being provided on the surfaces of the beams which deform due to heating, and a spring constant of the beams being adjusted such that thermal deformations of the thermally deformable materials cause the mirror portion to oscillate at the predetermined resonant frequency.

[0013] In the MEMS devices known in the prior art, a layered structure is usually provided, wherein the mechanically effective functional layer (often referred to as device layer) of the layered structure of the MEMS (Micro-Electro-Mechanical System) is formed by a supporting, non-piezoelectric layer (e.g. silicon) in which the movable or oscillating components, such as mirror-supporting support elements and the holding spring structure, are structured.

[0014] In particular, when structuring the mechanically effective functional layer of the layer structure of the MEMS, for example, the moving or oscillating bodies and the corresponding spring structure that holds the moving or oscillating bodies are formed or worked out in the functional layer.

[0015] Based on the generic MEMS devices and / or layer structures for MEMS devices known in the prior art, it is an object of the present disclosure to provide a MEMS device and / or a layer structure for a MEMS device with improved properties.

[0016] In particular, it is an object of the present disclosure to provide a MEMS device and / or a layer structure for a MEMS device with an improved design, in particular with regard to the design of the structuring of the mechanically active functional layer and / or the arrangement of the actuators, in order to improve the operating properties in particular based on the known MEMS devices.

[0017] In particular, it is an object of the present disclosure to provide a MEMS device and / or a layer structure for a MEMS device with an improved design, in particular with regard to the design of the structuring of the mechanically active functional layer and / or the arrangement of the actuators, in order to improve the operating properties of the MEMS device, particularly preferably with regard to one or more of the following aspects: • Improvement of the operating characteristics during operation, in particular in resonant operation and / or in non-resonant operation; • Improvement of the operating characteristics with regard to manufacturing-related process tolerances, particularly preferably by providing options or functions for static, quasi-static and / or dynamic compensation of any process tolerances, particularly in resonant operation and / or in non-resonant operation; • Improvement of the operating characteristics with regard to manufacturing-related symmetry errors, particularly preferably by providing options or functions for static, quasi-static and / or dynamic compensation of any process tolerance-related symmetry errors, particularly in resonant operation and / or in non-resonant operation; • Providing an adjustment and / or readjustment function for static, quasi-static and / or dynamic compensation of thermal influences during operation, in particular during resonant operation and / or non-resonant operation; • Providing an adjustment and / or readjustment function for static, quasi-static and / or dynamic adjustment and / or setting of the resonance frequency(ies), in particular in resonant operation and / or in non-resonant operation; • Providing an adjustment and / or readjustment function for static, quasi-static and / or dynamic adjustment and / or setting of the resonance frequency ratios in multi-axis MEMS devices, in particular in resonant operation and / or in non-resonant operation; • Providing a tuning range for a resonant frequency of the MEMS structure, in particular in resonant operation and / or in non-resonant operation; • Providing a tuning range for the resonance frequencies of the MEMS structure or the resonance frequency ratios in multi-axis MEMS devices, in particular in resonant operation and / or in non-resonant operation; • Avoidance or compensation of cross-coupling of the vibrations of the axes in multi-axis MEMS devices, especially in resonant operation and / or in non-resonant operation; and / or • Providing an adjustment and / or readjustment function for the static, quasi-static and / or dynamic influencing of higher and lower order mode structures and / or for the static, quasi-static and / or dynamic influencing of one or more vibration modes or eigenmodes of the MEMS structure absolutely and / or relative to one another (in particular for the static, quasi-static and / or dynamic adjustment and / or readjustment of the eigenforms and / or eigenfrequencies of the vibration modes of the MEMS structure absolutely and / or relative to one another), in particular in resonant operation of one or more vibration modes, and / or in non-resonant operation. Summary

[0018] The present disclosure relates to a MEMS device, in particular a MEMS mirror device, a layer structure for such a MEMS device and / or a method for producing such a MEMS device and / or such a layer structure for such a MEMS device.

[0019] In particular, to achieve one or more of the aforementioned objects, a MEMS device, in particular a MEMS mirror device and particularly preferably a vacuum-packed MEMS mirror device, a layer structure for such a MEMS device, and a method for producing such a MEMS device and / or a layer structure for such a MEMS device are proposed according to the independent claims. The dependent claims relate to some exemplary preferred embodiments.

[0020] According to a first aspect of the present disclosure, a MEMS device, in particular a MEMS mirror device or a vacuum-packed MEMS mirror device, is proposed in some embodiments.

[0021] According to the invention, the MEMS device comprises at least one frame structure (e.g., a rigid outer frame structure with an outer frame section, preferably closed on all sides), at least one movable element (e.g., a support section), and a holding and spring structure connected to the frame structure and holding the movable element movable relative to the frame structure with respect to at least one axis, in particular pivotable about the at least one axis. According to the invention, the holding and spring structure comprises at least one adjustment range section with at least one adjustment actuator.The at least one actuating actuator of the at least one actuating area section is configured to generate a force in a first direction and to generate a displacement, in particular an actuating movement, of at least a part of the holding and spring structure relative to the frame structure, wherein the at least one actuating area section of the holding and spring structure has an actuating area deformable in the first direction, which comprises one or more elongated and / or strip-shaped openings extending in the longitudinal direction transverse to the first direction.

[0022] According to preferred embodiments, the holding and spring structure may comprise at least one spring structure which preferably holds the at least one movable element rotatable and / or pivotable about at least one axis relative to the at least one frame structure.

[0023] According to preferred embodiments, the support and spring structure can comprise at least one or more drive actuators to drive an oscillation of the at least one movable element, preferably about at least one axis relative to the at least one frame structure. Preferably, the one or more control actuators according to preferred embodiments are provided additionally and / or independently (in particular independently controllable) from the one or more drive actuators for the oscillation of the at least one movable element.

[0024] According to preferred embodiments, the holding and spring structure may comprise at least one lever structure, which preferably holds the at least one spring structure.

[0025] According to preferred embodiments, the at least one spring structure may comprise a plurality of spring sections connected to the at least one movable element, which are preferably each held by at least one lever section of the at least one lever structure.

[0026] According to preferred embodiments, the at least one actuating actuator of the at least one actuating range section can be configured to generate a translational and / or rotational displacement, in particular an actuating movement, of at least a part of the holding and spring structure relative to the frame structure.

[0027] According to preferred embodiments, the at least one actuating actuator of the at least one actuating range section can be configured to generate a translational and / or rotational displacement, in particular an actuating movement, of at least part of the holding and spring structure relative to the frame structure in addition to oscillating movements driven by existing oscillating drives (e.g. drive actuators).

[0028] According to preferred embodiments, the at least one actuating actuator of the at least one actuating range section can be configured to generate the displacement, in particular actuating movement, of at least a part of the holding and spring structure relative to the frame structure, preferably in a direction parallel to a plane of the frame structure and / or with a component in a direction parallel to a plane of the frame structure.

[0029] According to preferred embodiments, the at least one actuating actuator of the at least one actuating range section can be configured to generate the displacement (e.g. translational and / or rotational), in particular actuating movement, of at least part of the holding and spring structure relative to the frame structure, preferably with at least one component in a direction parallel to a plane (e.g. parallel to the X / Y plane or with a component parallel to the X / Y plane) of the frame structure and / or with at least one component in a direction transverse, in particular perpendicular (e.g. in the Z direction or with a Z component), to the plane of the frame structure.

[0030] According to preferred embodiments, the at least one actuating actuator of the at least one actuating range section can be configured to generate the displacement (translational and / or rotational), in particular actuating movement, of at least a part of the holding and spring structure relative to the frame structure statically, quasi-statically and / or dynamically.

[0031] According to preferred embodiments, the at least one actuating actuator of the at least one actuating range section can be configured to generate the displacement (translational and / or rotational), in particular actuating movement, of at least part of the holding and spring structure relative to the frame structure in resonant operation and / or in at least partially non-resonant operation of the MEMS device, in which at least one axis of the MEMS device is operated non-resonantly.

[0032] According to preferred embodiments, the at least one actuating actuator of the at least one actuating range section can be configured to generate a (preferably translational and / or rotational) displacement, in particular an actuating movement, of at least part of the holding and spring structure relative to the frame structure, in particular for the static, quasi-static and / or dynamic compensation of manufacturing process tolerances or manufacturing-related process tolerances, in particular during resonant operation and / or during at least partially non-resonant operation; for the static, quasi-static and / or dynamic compensation of thermal influences, in particular during resonant operation and / or during at least partially non-resonant operation;for statically, quasi-statically and / or dynamically compensating for a process-tolerance-related symmetry error of the holding and / or spring structure, in particular during resonant operation and / or during at least partially non-resonant operation; for statically, quasi-statically and / or dynamically adjusting and / or resetting a resonant frequency of the movement of the movable element with respect to the at least one axis relative to the frame structure, in particular during resonant operation and / or during at least partially non-resonant operation; for tuning the resonant frequency of the movement of the movable element with respect to the at least one axis relative to the frame structure, in particular during resonant operation and / or during at least partially non-resonant operation;for statically, quasi-statically and / or dynamically adjusting and / or setting respective eigenforms and / or respective eigenfrequencies of one or more oscillation modes of an oscillation of the movable element with respect to the at least one axis relative to the frame structure, in particular in resonant operation and / or in at least partially non-resonant operation;

[0033] According to preferred embodiments, the at least one adjustment range section of the holding and spring structure can have the adjustment range deformable in the first direction, wherein the first direction extends in particular parallel to a plane of the frame structure and / or with at least one component in the direction parallel to the plane of the frame structure.

[0034] According to preferred embodiments, the at least one actuating actuator can be configured to generate the force in the first direction for stretching and / or compressing the actuating range in the first direction, in particular obliquely, transversely or parallel to the frame structure and / or parallel to a plane of the frame structure and / or with at least one component in the direction parallel to the plane of the frame structure.

[0035] According to preferred embodiments, the deformable adjustment region can be designed to be stiffer in a second direction transverse to the first direction than in the first direction, wherein the second direction preferably extends in particular parallel to a plane of the frame structure and / or with at least one component in the direction parallel to the plane of the frame structure.

[0036] According to preferred embodiments, the one or more openings of an opening pattern, in particular the one or more elongated and / or strip-shaped openings, can be formed in a functional layer of a layer structure of the MEMS device.

[0037] According to preferred embodiments, the at least one actuating actuator of the at least one actuating range section can be configured to generate a translational and / or rotational displacement, in particular actuating movement, of at least part of the holding and spring structure, in particular preferably relative to the frame structure in a direction oblique, transverse or parallel to the at least one axis.

[0038] According to preferred embodiments, the at least one adjustment range section can be connected to the frame structure (in particular preferably rigidly connected or anchored) and / or connected on a side facing away from the frame structure directly or indirectly, in particular via a lever section of a lever and / or holding structure, to a spring section of the holding and spring structure.

[0039] According to preferred embodiments, the at least one actuating actuator of the at least one actuating range section can be configured to generate a translational and / or rotational displacement, in particular actuating movement, of the at least one actuating range section on the side facing away from the frame structure, in particular obliquely, transversely or parallel to the frame structure and / or parallel to a plane of the frame structure and / or with at least one component in the direction parallel to the plane of the frame structure.

[0040] According to preferred embodiments, the MEMS device may preferably further comprise an actuator and / or sensor structure for driving and / or detecting an oscillation of the movable element with respect to the at least one axis relative to the frame structure, particularly preferably in at least partially non-resonant operation and / or in resonant operation.

[0041] According to preferred embodiments, at least a part of the actuator and / or sensor structure can be arranged in the region of the displaceable part of the holding and spring structure, in particular, for example, on respective lever sections of a lever and / or holding structure, which preferably holds a spring structure.

[0042] According to preferred embodiments, the holding and spring structure may comprise a lever structure with at least one lever section and / or a spring structure with at least one spring section.

[0043] According to preferred embodiments, the at least one lever section of the lever structure can be connected at one end to the at least one spring section of the spring structure and / or can be connected at an end facing away from the at least one spring section to the at least one adjustment range section.

[0044] According to preferred embodiments, the at least one actuating actuator of the at least one actuating range section can be configured to generate a translational and / or rotational displacement, in particular an actuating movement, of the at least one lever section of the lever structure and / or of the at least one spring section of the spring structure via a deformation of a deformable actuating range of the at least one actuating range section.

[0045] According to preferred embodiments, at least one activity section of the actuator and / or sensor structure for driving and / or detecting an oscillation of the movable element with respect to the at least one axis relative to the frame structure can be arranged on the at least one lever section of the lever structure.

[0046] According to preferred embodiments, the holding and spring structure can hold the movable element movable with respect to two axes relative to the frame structure, in particular pivotable about the two axes.

[0047] According to preferred embodiments, the at least one actuating actuator of the at least one actuating range section can be configured to generate a translational and / or rotational displacement, in particular an actuating movement, of at least a part of the holding and spring structure relative to the frame structure.

[0048] According to preferred embodiments, the at least one actuating actuator of the at least one actuating range section can be configured to generate the displacement, in particular actuating movement, of at least a part of the holding and spring structure relative to the frame structure in a direction parallel to a plane of the two axes and / or with a component in a direction parallel to the plane of the two axes.

[0049] According to preferred embodiments, the at least one actuating actuator of the at least one actuating range section can be configured to generate the displacement, in particular actuating movement, of at least a part of the holding and spring structure relative to the frame structure with at least one component in a direction parallel to a plane of the two axes and / or with at least one component in a direction transverse, in particular perpendicular, to the plane of the two axes.

[0050] According to preferred embodiments, the at least one actuating actuator of the at least one actuating range section can be configured to generate the displacement, in particular actuating movement, of at least a part of the holding and spring structure relative to the frame structure statically, quasi-statically and / or dynamically.

[0051] According to preferred embodiments, the at least one actuating actuator of the at least one actuating range section can be configured to generate the displacement, in particular actuating movement, of at least part of the holding and spring structure relative to the frame structure in the resonant operation of the two axes and / or in the at least partially non-resonant operation of the MEMS device, in which at least one axis of two axes is operated non-resonantly.

[0052] According to preferred embodiments, the at least one actuating actuator of the at least one actuating range section can be configured to control the displacement, in particular the actuating movement, of at least part of the holding and spring structure relative to the frame structure, in particular: for static, quasi-static and / or dynamic compensation of manufacturing process tolerances or manufacturing-related process tolerances, in particular during resonant operation and / or during at least partially non-resonant operation; for static, quasi-static and / or dynamic compensation of thermal influences, in particular during resonant operation and / or during at least partially non-resonant operation; for static, quasi-static and / or dynamic compensation of a process tolerance-related symmetry error of the holding and / or spring structure, in particular during resonant operation and / or during at least partially non-resonant operation;for statically, quasi-statically and / or dynamically adjusting and / or adjusting resonance frequencies of the movement of the movable element with respect to the two axes relative to the frame structure, in particular during resonant operation and / or during at least partially non-resonant operation; for statically, quasi-statically and / or dynamically adjusting and / or adjusting a ratio of the resonance frequencies of the movement of the movable element with respect to the two axes relative to the frame structure, in particular during resonant operation and / or during at least partially non-resonant operation; for statically, quasi-statically and / or dynamically compensating for cross-coupling of the movement of the movable element with respect to the two axes relative to the frame structure, in particular during resonant operation and / or during at least partially non-resonant operation;for tuning the resonance frequencies and / or the ratio of the resonance frequencies of the movement of the movable element with respect to the two axes relative to the frame structure, in particular during resonant operation and / or during at least partially non-resonant operation; and / or for statically, quasi-statically and / or dynamically adjusting and / or setting respective eigenforms and / or respective eigenfrequencies of one or more oscillation modes of an oscillation of the movable element with respect to one or more of the two axes relative to the frame structure, in particular during resonant operation and / or during at least partially non-resonant operation.

[0053] According to preferred embodiments, the at least one actuating actuator of the at least one actuating range section can be configured to generate a translational and / or rotational displacement, in particular an actuating movement, of at least part of the holding and spring structure relative to the frame structure with at least one component in the direction of a first axis of the two axes and / or with at least one component transverse to a second axis of the two axes.

[0054] According to preferred embodiments, the at least one actuating actuator of the at least one actuating range section can be configured to generate a translational and / or rotational displacement, in particular an actuating movement, of at least part of the holding and spring structure relative to the frame structure in the direction with at least one component oblique to the first axis of the two axes and / or with at least one component oblique to a second axis of the two axes.

[0055] According to preferred embodiments, the holding and spring structure can comprise a plurality of adjustment range sections, wherein each adjustment range section preferably comprises at least one respective adjustment actuator.

[0056] According to preferred embodiments, each of the at least one respective actuating actuator of the actuating range sections can be configured to generate a corresponding translational and / or rotational displacement, in particular actuating movement, of at least a part of the holding and spring structure relative to the frame structure.

[0057] According to preferred embodiments, the at least one actuating actuator of the at least one actuating range section can comprise a piezoelectric actuator, a magnetic actuator and / or an electrical, electromagnetic and / or electrostatic actuator, in particular with a capacitor and / or comb drive.

[0058] According to a second aspect of the disclosure, a layer structure for a MEMS device according to at least one of the above aspects is proposed.

[0059] According to preferred embodiments, the layered structure can comprise at least one structured functional layer, wherein the at least one structured functional layer preferably comprises the frame structure, the movable element, and the holding and spring structure with the at least one adjustment area section. In particular, the holding and spring structure with the at least one adjustment area section is preferably formed or structured in the at least one functional layer.

[0060] According to a third aspect of the present disclosure, in some embodiments, a method for producing a layer structure for a MEMS device, in particular for a MEMS mirror device or a vacuum-packed MEMS mirror device, is proposed, comprising providing a layer structure that comprises at least one functional layer and / or at least one actuator and / or sensor layer. Structuring the at least one actuator and / or sensor layer and / or the at least one functional layer, wherein the holding and / or spring structure and / or the at least one adjustment region section is formed in the functional layer during the structuring of the at least one functional layer.

[0061] Preferably, in the structuring of the at least one functional layer, at least one frame structure, at least one movable element and / or at least one holding and / or spring structure, which holds the at least one movable element preferably rotatable and / or pivotable at least about an axis relative to the at least one frame structure, is formed in the at least one functional layer.

[0062] According to a fourth aspect of the present disclosure, some embodiments propose a method for manufacturing a MEMS device, in particular a MEMS mirror device or a vacuum-packed MEMS mirror device. The layer structure described above can be used and incorporated into the MEMS device, which can be provided with further components and assembled with cover elements.

[0063] In operation, such MEMS devices can be configured according to some embodiments, in particular according to the above aspects, for periodic movements or oscillations about one or more axes in the frequency range from preferably approximately 1 Hz up to the kHz range, in embodiments preferably for frequencies substantially less than or equal to 200 kHz and particularly preferably for frequencies substantially greater than or equal to 1 kHz and / or substantially less than or equal to 100 kHz.

[0064] Further aspects and embodiments as well as advantages and more specific exemplary embodiments of the exemplary aspects and features described above can be found in the following descriptions and explanations of the attached figures, which are not to be construed as limiting in any way. Short description of the characters Fig. 1A shows an exemplary schematic top view of a layer structure for a generic MEMS device according to a background example; Fig. 1B shows an exemplary schematic sectional view of a layer structure for a MEMS device according to Fig. 1A; Fig. 2 shows an exemplary, schematic sectional view of a MEMS device with a layer structure according to Fig. 1A; Fig. 3 shows an exemplary schematic top view of a layer structure for a MEMS device according to some embodiments; Fig. 4A shows an exemplary, schematic plan view of a detailed view of an adjustment area of ​​the layer structure according to Fig. 3; Fig. 4B shows an exemplary, schematic sectional view of an adjustment area of ​​the layer structure according to Fig. 4A; Fig. 4C and Fig. 4D show the exemplary, schematic top view of the setting area according to Fig. 4A for the respective illustration of exemplary displacements; Fig. 5 shows an exemplary functional schematic representation of a layer structure for a MEMS device according to Fig. 3; Fig. 6 shows an exemplary schematic top view of a detailed view of an adjustment region of a layer structure for a MEMS device according to some further embodiments; Fig. 7 shows an exemplary schematic top view of a detailed view of an adjustment region of the layer structure for a MEMS device according to some further embodiments; Fig. 8 shows an exemplary schematic top view of a layer structure for a MEMS device according to some further embodiments; Fig. 9 shows an exemplary functional schematic representation of a layer structure for a MEMS device according to Fig. 8; Fig. 10 shows an exemplary schematic top view of a layer structure for a MEMS device according to some further embodiments; Fig. 11 shows an exemplary schematic top view of a layer structure for a MEMS device according to some further embodiments; Fig. 12 shows an exemplary functional schematic representation of a layer structure for a MEMS device according to Fig. 11; Fig. 13 shows an exemplary schematic top view of a layer structure for a MEMS device according to some further embodiments; Fig. 14 shows an exemplary functional schematic representation of a layer structure for a MEMS device according to Fig. 13; Fig. 15 shows an exemplary schematic top view of a detailed view of an adjustment region of the layer structure for a MEMS device according to some further embodiments; Fig. 16 shows an exemplary schematic top view of a detailed view of an adjustment region of the layer structure for a MEMS device according to some further embodiments; Fig. 17 shows an exemplary schematic top view of a detailed view of an adjustment region of the layer structure for a MEMS device according to some further embodiments; Fig. 18 shows an exemplary schematic top view of a layer structure for a MEMS device according to some further embodiments; Fig. 19A to 19D show the exemplary, schematic plan view of a detailed view of a setting area according to Fig. 18 for the respective illustration of exemplary shifts; and Fig. 20 shows an exemplary schematic top view of a detailed view of an adjustment region of the layer structure for a MEMS device according to some further embodiments. Detailed description of the figures and preferred embodiments

[0065] In the following, some examples or embodiments of the present disclosure are described in detail with reference to the accompanying figures. Identical or similar elements in the figures may be designated by the same reference numerals, but sometimes also by different reference numerals.

[0066] It should be emphasized, however, that the subject matter of the present disclosure is in no way limited or restricted to the exemplary embodiments and their embodiment features described below, but further comprises modifications of the exemplary embodiments, in particular those which are encompassed by modifications of the features of the described examples or by combination of one or more of the features of the described examples within the scope of protection of the independent claims.

[0067] With reference to some embodiments, exemplary layer structures are described, in particular in the sense of a layer structure for a MEMS device (see, for example, the exemplary MEMS device according to Fig. 2).

[0068] The term "layer structure" in the sense of the present disclosure describes an object (product), wherein a layer structure comprises at least one layer and preferably a plurality of layers, which can, for example, be built on top of one another, e.g. in the sense of a stack (layer stack) with a plurality of layers lying directly or indirectly on top of one another, wherein the respective layers can preferably be arranged according to the described exemplary embodiments and / or can preferably each be structured. In particular, a layer structure preferably comprises at least one structured functional layer and, in some embodiments, can preferably also comprise at least one structured actuator and / or sensor layer, which in some embodiments can comprise piezoelectric material.In further embodiments, it is alternatively or additionally possible to provide structured actuator and / or sensor sections on, at and / or in the functional layer, e.g. electromechanical drives / sensors, such as comb sections of one or more comb drives (comb drive).

[0069] A layer structure according to the present disclosure typically comprises, according to embodiments, at least one structured functional layer (e.g., at least one structured functional layer comprising silicon) and preferably at least one structured actuator and sensor layer (e.g., at least one piezoelectric layer formed from piezoelectric material or at least comprising piezoelectric material). In further embodiments, it is additionally or alternatively also possible to provide non-piezoelectric drives / sensors, e.g., electrostatic, electromagnetic, and / or thermal actuators and / or sensors. In further embodiments, it is alternatively or additionally possible to provide structured actuator and / or sensor sections on, at, and / or in the functional layer, e.g., electromechanical drives / sensors, such as comb sections of one or more comb drives.

[0070] Particularly preferably, in some preferred embodiments, the structured functional layer (e.g., at least one structured functional layer comprising silicon) comprises one (or more) layer(s) with a constant layer thickness in the entire region of the layer structure, wherein the structured functional layer is preferably completely open in selected regions (i.e., for example, continuously open from one side to the other side in one or more selected regions, e.g., completely open from the top side to the bottom side).

[0071] In further embodiments, in an exemplary layer structure, in addition to the at least one functional layer, one or more further layers or exemplary intermediate layers can preferably be provided and / or one or more of the described layers can be omitted in the exemplary embodiments described below.

[0072] In some embodiments, the corresponding layer structure comprises a structured functional layer 100 (device layer), which particularly preferably forms a mechanically effective, structured functional layer for a MEMS device.

[0073] The term “mechanically effective” in relation to a MEMS is to be understood in particular to mean that the mechanically effective layer(s) or the at least one mechanically effective functional layer (device layer) of the MEMS layer structure preferably forms the layer(s) which, according to their structuring, is / are designed or configured to execute a movement, in particular an oscillatory movement, in particular a one-, two- or three- or multi-dimensional oscillatory movement, e.g. preferably in such a way that one or more structures or bodies formed in the mechanically effective layer(s) or mechanically effective functional layer(s) can execute an oscillatory movement, in particular a one-, two- or three- or multi-dimensional oscillatory movement (e.g. about an oscillation / torsion axis or about two oscillation / torsion axes which are preferably transverse or in particular perpendicular to one another, particularly preferably e.g.for Lissajous scanning movements).

[0074] For this purpose, in some embodiments, the holding and / or spring structure for the movable structures or bodies of the mechanically active layer or mechanically active functional layer can preferably also be formed in this mechanically active layer or mechanically active functional layer.

[0075] In some embodiments, the spring structure may comprise springs, particularly preferably bending and / or torsion springs of various sizes and / or shapes, which preferably form at least one spring structure designed to hold a central, movable element in such a way that the central, movable element can execute a respective oscillating (oscillating) rotational or pivoting movement about the respective one or more oscillation and / or torsion axes about the corresponding axis (e.g. torsional oscillations).

[0076] Furthermore, an exemplary embodiment of the mechanically active layer(s) or mechanically active functional layer(s) can preferably influence and / or determine the resonance frequency(s) of the MEMS, the deflection amplitudes and / or any dynamic deformations (e.g. in a holding and / or spring structure formed in the mechanically active layer or mechanically active functional layer).

[0077] It should be noted that in the following exemplary embodiments, a mechanically effective functional layer 100 is described merely by way of example, which, by structuring the functional layer 100, forms one or more frame structures, one or more spring structures, one or more holding structures (e.g., one or more lever structures), and / or one or more movable elements / sections. In further exemplary embodiments, a plurality of functional layers can also be provided, each of which, individually or in combination, can form one or more frame structures, one or more spring structures, one or more holding structures (e.g., one or more lever structures), and / or one or more movable elements / sections.

[0078] First, a background example of a generic layer structure for a MEMS device is described below. Features and aspects of the background example are also applicable analogously to the embodiments described subsequently and are disclosed for these, unless any differences are explicitly noted.

[0079] Fig. 1A shows an exemplary, schematic top view of a generic layer structure 10 according to a background example, in particular for a MEMS device 20 (see, for example, the exemplary MEMS device according to Fig. 2).

[0080] The exemplary layer structure 10 according to Fig. 1A is embodied, by way of example, as a layered structure for a MEMS mirror device 20 (e.g., a MEMS mirror scanner or a micromirror device), in which a central, movable element, here, by way of example, a mirror 300 or a mirror support element (mirror support section 170) with mirror 300, can be held so as to be rotatable or pivotable about an axis A1 and, by way of example, can be driven in a rotatable or pivotable oscillating manner about the axis A1; e.g., here, an exemplary 1D micromirror or an exemplary 1D MEMS mirror device.

[0081] The exemplary layer structure 10 according to Fig. 1A is preferably designed so that an oscillating vibration of the central, movable element 170 (with mirror 300) about the axis A1 can be driven, particularly preferably an oscillating vibration of the central, movable element 170 (with mirror 300) about the axis A1 via an oscillating voltage applied to actuators of the actuator and / or sensor structure 200. In this case, the exemplary layer structure 10 can be designed, for example, preferably for operation at substantially the resonant frequency with respect to the axis A1 (so-called resonant operation of the axis A1), wherein the resonant frequency is, for example, in the range greater than or equal to substantially 1 kHz and / or less than or equal to substantially 100 kHz.

[0082] The exemplary white areas inside the layer structure 10 according to Fig. 1A (and in further representations) illustrate exemplary regions of the layer structure 10 in which the mechanically effective functional layer 100 has been structured, in particular such that these white regions are completely open in the layer thickness direction through the functional layer 100 (see, for example, the lateral sectional view of the layer structure along section line B - B according to Fig. 1B).

[0083] The exemplary structured functional layer 100 according to Fig. 1A includes, by way of example, an inner support section 170 (as an example of a central, movable element) on which, by way of example, the mirror 300 is arranged (e.g., as an applied mirror layer). Thus, the support section 170 with mirror 300 can also be referred to, by way of example, as a mirror support section 170. However, it should be noted that further examples without mirror 300 can also be provided. This also applies analogously to embodiments described later.

[0084] According to Fig. 1A, the mirror support section 170, which carries the mirror 300, is circular in plan view. Other shapes are also possible in further examples, e.g., oval, round, or angular, e.g., polygonal, rectangular, or square, or even a polygon with three or more corners, e.g., hexagonal. In further examples, any corners can also be rounded. This also applies analogously to the embodiments described later.

[0085] According to Fig. 1A, the mirror 300 arranged on the mirror support section 170 is, for example, circular in plan view. In examples, other shapes are also possible, e.g., oval, round, or angular, e.g., polygonal, rectangular, or square, or, for example, a polygon with three or more corners, e.g., hexagonal. In examples, any corners may also be rounded. In further examples, it is also possible to arrange several separate mirrors or mirror surfaces on the mirror support section 170. However, it should be noted that further examples without a mirror 300 can also be provided. This also applies analogously to embodiments described later.

[0086] In some exemplary embodiments, the mirror support element 170 (mirror support section 170) and / or the mirror 300 can have a width (e.g., a diameter in the case of an exemplary substantially circular shape) substantially greater than or equal to 0.2 mm and / or substantially less than or equal to 50 mm, particularly preferably a width (e.g., a diameter in the case of an exemplary substantially circular shape) substantially greater than or equal to 0.5 mm and / or substantially less than or equal to 20 mm. This applies analogously to embodiments described later.

[0087] The structured functional layer 100 according to Fig. 1A comprises, by way of example, on the outside a frame section 110 (exemplary outer frame structure) which, as seen in plan view, is closed on all sides (preferably rigid), which in this purely exemplary embodiment according to Fig. 1A, in a plan view, is designed to be rectangular or square, for example. In further examples, the frame section 110, which is closed on all sides, can also have other shapes in the interior and / or exterior area, such as round, oval, circular or ring-shaped, or polygonal, for example, also as a polygon with three or more corners, such as hexagonal. In further examples, any corners in the interior and / or exterior area of ​​the frame section can also be rounded. This also applies analogously to embodiments described later.

[0088] The mirror carrier section 170 of the structured functional layer 100 according to Fig. 1A is connected, for example, to the frame section 110 of the structured functional layer 100 via a spring structure 130 of the structured functional layer 100 and a lever structure 120 of the structured functional layer 100.

[0089] The spring structure 130 of the structured functional layer 100 according to Fig. 1A includes, for example, several (here according to Fig. 1A shows, by way of example, two spring sections 131 and 132. The spring sections 131 and 132 can be designed as bending and / or torsion springs of various shapes and sizes, e.g., as torsion springs, double torsion springs, single or multiple folded springs, double folded springs, and / or meander or serpentine springs. This applies analogously to the embodiments described later.

[0090] Preferably, the spring sections 131 and 132 have web widths substantially greater than or equal to 10 µm, in particular substantially greater than or equal to 20 µm, particularly preferably substantially greater than or equal to 40 µm. Preferably, the spring sections 131 and 132 have web widths substantially less than or equal to 200 µm, in particular substantially less than or equal to 100 µm, and particularly preferably substantially less than or equal to 80 µm. This applies analogously to embodiments described later.

[0091] The spring sections 131 and 132 of the spring structure 130 are connected, for example, to opposite sides of the mirror support section 170 in the direction of the axis A1, in particular to the inwardly facing ends (ie ends facing the mirror support section 170) of the respective spring sections 131 and 132 of the spring structure 130.

[0092] At the ends of the spring sections 131 and 132 facing away from the mirror support section 170, the spring structure 130 is connected, for example, to the lever sections 121 to 124 of the lever structure 120.

[0093] The lever structure 120 of the structured functional layer 100 according to Fig. 1A includes, for example, several (here according to Fig. 1A shows four lever sections 121 to 124.

[0094] Here, the (exemplarily upper) lever sections 122 and 124 merge into one another at the position of the intersection line with the axis A1, and the lever section 124 is, for example, the section (lever section) that is arranged on one (exemplarily left) side of the axis A1, and the lever section 122 is, for example, the section (lever section) that is arranged on the other (exemplarily right) side of the axis A1.

[0095] By way of example, the upper lever sections 122 and 124 are shown in plan view according to Fig. 1A on the opposite side relative to the axis A1 (ie in particular opposite in the transverse direction to the axis A1), and by way of example the upper lever sections 122 and 124 are formed axially symmetrically relative to the axis A1.

[0096] By way of example, the (exemplarily lower) lever sections 121 and 123 also merge into one another at the position of the intersection line with the axis A1, and the lever section 123 is the section (lever section) that is arranged on one (exemplarily left) side of the axis A1, and the lever section 121 is by way of example the section (lever section) that is arranged on the other (exemplarily right) side of the axis A1.

[0097] By way of example, the lower lever sections 121 and 123 are shown in plan view according to Fig. 1A on the opposite side relative to the axis A1 (ie in particular opposite in the transverse direction to the axis A1), and by way of example the lower lever sections 121 and 123 are formed axially symmetrically relative to the axis A1.

[0098] For example, the upper lever sections 122 and 124 are arranged relative to the mirror support section 170 and mirror 300, respectively, on the opposite side in the direction of the axis A1 than the lower lever sections 121 and 123.

[0099] The exemplary lever sections 121 to 124 of the lever structure 120 of the structured functional layer 100 according to Fig. 1A are each connected, by way of example, on an outwardly facing side to the inside of the frame section 110 (e.g. as an exemplary anchoring of the lever structure 120 to the frame section 110 of the structured functional layer 100).

[0100] In particular, the lever sections 121 to 124 of the lever structure 120 of the structured functional layer 100 are according to Fig. 1A, for example, are preferably rigidly connected to the frame section 110 on one side, in particular with the ends facing the frame section 110 or the ends facing away from the respective springs 131 and 132.

[0101] On the opposite side of the connection to the frame section 110, the lever sections 121 to 124 of the lever structure 120 of the structured functional layer 100 are each connected, for example, to one of the spring sections 131 and 132 of the spring structure 130 of the structured functional layer 100.

[0102] In particular, the lever sections 121 to 124 of the lever structure 120 of the structured functional layer 100 are according to Fig. 1A, for example, each with the ends facing away from the frame section 110 or the ends facing the respective springs 131 and 132, each connected to one of the spring sections 131 and 132 of the spring structure 130 of the structured functional layer 100.

[0103] Thus, the (lower) lever sections 121 and 123 of the lever structure 120 of the structured functional layer 100 are each connected, for example, to the (lower) spring section 131 of the spring structure 130 of the structured functional layer 100, and the (upper) lever sections 122 and 124 of the lever structure 120 are each connected, for example, to the (upper) spring section 132 of the spring structure 130.

[0104] The spring sections 131 and 132 of the spring structure 130 of the structured functional layer 100 are each connected, for example, to the mirror support section 170 of the structured functional layer 100, in particular, for example, on opposite sides of the mirror support section 170 in the direction of the axis A1.

[0105] The mirror support section 170 of the structured functional layer 100 is held, for example, via the spring sections 131 and 132 of the spring structure 130 and the lever sections 121 to 124 of the lever structure 120 on the outer frame section 110 of the structured functional layer 100, in particular, for example, pivotable about the axis A1.

[0106] In particular, the outer frame portion 110 of the structured functional layer 100 according to Fig. 1A shows, for example, the lever sections 121 to 124 of the lever structure 120, and the lever sections 121 to 124 of the lever structure 120 hold, for example, the spring sections 131 and 132 of the spring structure 130.

[0107] The spring sections 131 and 132 of the spring structure 130 themselves are not held directly on the frame section 110, for example, but indirectly via the lever structure 120, which is arranged between the frame structure of the frame section 110 and the spring structure 130. The spring sections 131 and 132 of the spring structure 130 hold the mirror support section 170 on the inside, for example.

[0108] In embodiments according to Fig. 1A, in particular an axis A1 is provided by way of example (e.g. for a one-dimensional oscillation about the axis A1, e.g. for a 1D micromirror MEMS device), and the mirror support section 170 with the exemplary mirror 300 is held pivotably about this axis A1 by way of example.

[0109] For example, the mirror support section 170 with the exemplary mirror 300 is indirectly held pivotably about the axis A1 on the frame structure 110 via the lever structure 120 and the spring structure 130, wherein the spring structure 130 holds the mirror support section 170 with the exemplary mirror 300 pivotably about the axis A1 and is indirectly held via the lever structure 120 on the frame structure 110, wherein the lever structure 120 is preferably rigidly connected to the frame structure 110 on the outside.

[0110] In particular, the frame section 110 of the structured functional layer 100 is preferably rigid, and the mirror support section 170 of the structured functional layer 100 is held pivotably about the axis A1 on the outer frame section 110 of the structured functional layer 100, for example via the spring sections 131 and 132 of the spring structure 130 and the lever sections 121 to 124 of the lever structure 120 (which may also be at least partially resilient, for example).

[0111] In particular, by way of example, the (upper) lever sections 122 and 124 of the lever structure 120 hold the (upper) spring section 132 of the spring structure 130 and, by way of example, the (lower) lever sections 121 and 123 of the lever structure 120 hold the (lower) spring section 131 of the spring structure 130. In some examples, the lever sections of the lever structure 120 have web widths substantially greater than or equal to 100 µm and in particular substantially greater than or equal to 200 µm, particularly preferably substantially greater than or equal to 500 µm. Preferably, the lever sections of the lever structure 120 have web widths substantially less than or equal to 10 mm, in particular substantially less than or equal to 1 mm, and particularly preferably substantially less than or equal to 800 µm. This applies analogously to embodiments described later.

[0112] In some examples, the lever sections of the lever structure 120 have a total area in plan view that is preferably substantially two to 50 times larger than the total area of ​​the spring sections of the spring structure 120 in plan view. This applies analogously to embodiments described later.

[0113] On the lever sections 121 to 124 of the lever structure 120, respective activity sections 211 to 214 of an actuator and / or sensor structure 200 of the layer structure 10 are formed, for example.

[0114] These activity sections 211 to 214 of the actuator and / or sensor structure 200 can, in preferred examples, be configured as and / or comprise actuators and / or sensors or actuator and / or sensor layers. This also applies analogously to the embodiments described later.

[0115] For the purposes of this disclosure, "activity sections" are, in particular, sections designed to convert electrical signals into mechanical movements (e.g., as an actuator) (e.g., to drive the oscillation(s) of the at least one movable element in one or more axes) and / or to convert mechanical movements into electrical signals (e.g., as a sensor) (e.g., to detect the oscillation(s) of the at least one movable element in one or more axes). This also applies analogously to embodiments described later.

[0116] In some preferred examples, the activity sections 211 to 214 of the actuator and / or sensor structure 200 can be formed from one or more structured piezoelectric layers and / or comprise piezoelectric or ferroelectric material. This also applies analogously to embodiments described later.

[0117] In further examples, it is additionally or alternatively possible to provide non-piezoelectric drives / sensors, e.g., electrostatic, electromagnetic, and / or thermal actuators and / or sensors. In further examples, it is alternatively or additionally possible to provide structured actuator and / or sensor sections on, at, and / or in the functional layer, e.g., electromechanical drives / sensors, such as comb sections of one or more comb drives. This also applies analogously to the embodiments described later.

[0118] In some preferred examples, exemplary piezoelectric activity sections 211 to 214 may comprise, for example, aluminum nitride (AlN), aluminum scandium nitride (AlScN), lead zirconate titanate (PZT), and / or niobium-doped PZT (PZT-Nb). The exemplary piezoelectric activity sections 211 to 214 may, for example, alternatively or additionally also comprise semi-crystalline polymer materials, such as PVDF (polyvinylidene fluoride (CF2-CH2)n). This also applies analogously to embodiments described later.

[0119] In Fig. 1A, the activity sections 211 to 214 of the actuator and / or sensor structure 200 are each formed, for example, as a respective contiguous layer section, particularly preferably as a respective contiguous layer section of a piezoelectric layer.

[0120] In further examples, however, the respective activity sections 211 to 214 of the actuator and / or sensor structure 200 can also be subdivided, for example, into two or more subsections, wherein any subsections can be formed as separate actuators and / or sensors or separate actuator and / or sensor layers, which, however, can preferably each be formed from the same structured piezoelectric layer and / or each comprise the same or different piezoelectric or ferroelectric materials. This also applies analogously to embodiments described later.

[0121] For the mechanical stabilization of the vibration system around the axis A1, the exemplary layer structure 10 according to Fig. 1A is designed as an example mirror-symmetrical (as an example axisymmetrical) with respect to the axis A1.

[0122] The mirror symmetry (axial symmetry) with respect to the axis A1 in examples according to Fig. 1A relates in particular to the mirror-symmetrical arrangement and shape of at least the inner regions of the structured functional layer 100, such as the mirror-symmetrical arrangement and shape of the mirror support section 170, the mirror-symmetrical arrangement and shape of the spring structure 130 (e.g. the mirror-symmetrical arrangement and shape of the spring sections 131 and 132), the mirror-symmetrical arrangement and shape of the lever structure 120 (e.g. the mirror-symmetrical arrangement and shape of the lever sections 121 to 124), and preferably also, by way of example, the mirror-symmetrical arrangement and shape of the drive and / or sensor structure 200 (e.g. the mirror-symmetrical arrangement and shape of the activity sections 211 to 214) and the mirror-symmetrical arrangement and shape of the connection or anchoring of the lever structure 120 to the frame section 110.

[0123] Thus, with the mirror-symmetrical design with respect to the axis A1, the pivoting or oscillation behavior of the mirror support section 170 (optionally with the mirror 300 arranged thereon) about this axis A1 can be advantageously structurally stabilized. This is to be distinguished in particular from designs in the prior art, whose MEMS structure has a rotational symmetry or a point symmetry with respect to the center of the mirror or the central movable element of the MEMS structure (see, for example, the embodiment according to Fig. 13 below).

[0124] Furthermore, the mirror symmetry (or axial symmetry) with respect to the axis A1 optionally applies, for example, in Fig. 1A also shows the mirror-symmetrical arrangement and shape of the open regions of the structured functional layer 100 and at least the internal arrangement and shape of the anchor and frame structure (frame section 110). The external shape of the frame section 110 is, for example, optionally also mirror-symmetrical with respect to the axis A1, but can have any desired shape in further examples. This also applies analogously to the embodiments described later.

[0125] In the exemplary top view according to Fig. 1A, the lever sections 121 to 124 of the lever structure 120 are each, by way of example, rectilinear (running straight) and, in particular, by way of example, strip-shaped. By way of example, the lever sections 121 to 124 of the lever structure 120 each run transversely to the axis A1 (i.e., in particular, by way of example, preferably substantially perpendicular to the axis A1).

[0126] The two (lower) lever sections 121 and 123 of the lever structure 120 are arranged opposite one another in a mirror-symmetrical manner with respect to the axis A1, for example, and are designed in a mirror-symmetrical manner with respect to the axis A1, for example.

[0127] On the side of the lever sections 121 and 123 facing the axis A1, the lever sections 121 and 123 are each connected, for example, to the corresponding spring section 131 of the spring structure 130, and on the side of the lever sections 121 and 123 facing away from the axis A1, the lever sections 121 and 123 are each connected (preferably rigidly) or anchored to the frame structure or the frame section 110, for example, in a mirror-symmetrical manner with respect to the axis A1.

[0128] The two (upper) lever sections 122 and 124 of the lever structure 120 are arranged opposite one another in a mirror-symmetrical manner with respect to the axis A1, for example, and are designed in a mirror-symmetrical manner with respect to the axis A1, for example.

[0129] On the side of the lever sections 122 and 124 facing the axis A1, the lever sections 122 and 124 are each connected, for example, to the corresponding spring section 132 of the spring structure 130, and on the side of the lever sections 122 and 124 facing away from the axis A1, the lever sections 122 and 124 are each connected (preferably rigidly) or anchored to the frame structure or the frame section 110, for example, in a mirror-symmetrical manner with respect to the axis A1.

[0130] The (lower) lever sections 121 and 123 of the lever structure 120 run opposite one another with respect to the axis A1, for example, essentially perpendicular to the axis A1 (in the transverse direction to the axis A1) and in particular, for example, coaxially or in alignment with one another (i.e., for example, with coaxially aligned center axes of the respective strip shapes of the lever sections 121 and 123 of the lever structure 120).

[0131] The (upper) lever sections 122 and 124 of the lever structure 120 (on the side opposite the (lower) lever sections 121 and 123 in the direction of the axis A1 with respect to the mirror support element 170) run, with respect to the axis A1, opposite one another, for example, essentially perpendicular to the axis A1 (in the transverse direction to the axis A1) and in particular, for example, coaxially or in alignment with one another (i.e., for example, with coaxially aligned center axes of the respective strip shapes of the lever sections 122 and 124 of the lever structure 120).

[0132] In further examples, the (optional) lever sections 121 to 124 can also have shapes other than a straight longitudinal extension. For example, the (optional) lever sections 121 to 124 can have a curved shape or at least one or more curved sections. Additionally or alternatively, in further examples, the lever sections can taper toward the spring sections. This also applies analogously to embodiments described later.

[0133] In Fig. 1A, the spring sections 131 and 132 of the spring structure 130 are designed, for example, as torsion springs, each extending, for example, along the axis A1.

[0134] In Fig. 1A, the spring sections 131 and 132 of the spring structure 130 (exemplarily designed as torsion springs) are designed, for example, to hold the mirror support element 170 in such a way that the mirror support element 170 can perform an oscillating pivoting or rotational movement about the corresponding axis A1 (e.g., torsional oscillations) about the axis A1 (here, for example, an exemplary torsion axis), e.g., for any 1D scanning movements of the mirror 300.

[0135] In this case, the preferably piezoelectric activity sections 211 to 214 of the actuator and / or sensor structure 200 can be used, for example, as respective piezo actuators for driving the oscillation of the mirror support section 170 or the mirror 300.

[0136] As an example, the layer structure 10 according to Fig. 1A, a contact 400 is provided, which includes exemplary conductor tracks 401 and 402 for contacting the activity sections 211 to 214 of the actuator and / or sensor structure 200. By way of example, the conductor tracks 401 are provided for contacting the activity sections 211 and 212, and by way of example, the conductor tracks 402 are provided for contacting the activity sections 213 and 214 of the actuator and / or sensor structure 200.

[0137] In this case, the conductor tracks 401 and 402 of the contact 400 can be connected, for example, to the respective top electrodes of the contact 400 (in Fig. 1A not shown; see e.g. Fig. 1B, reference numeral 400) of the preferably piezoelectric activity sections 211 to 214. This also applies analogously to the embodiments described later.

[0138] In addition, in some embodiments, a bottom electrode contact may preferably be provided (in Fig. 1A is not shown; this is exemplified with respect to Fig. 1B described below) to apply a (e.g., capacitive) voltage to the respective, preferably piezoelectric, active sections 211 to 214 of the actuator and / or sensor structure 200. This also applies analogously to embodiments described later.

[0139] For example, by applying an oscillating voltage to the preferably piezoelectric activity sections 211 and 212 of the actuator and / or sensor structure 200 and applying a preferably anti-phase oscillating voltage (phase shift, e.g., substantially 180°) to the preferably piezoelectric activity sections 213 and 214 of the actuator and / or sensor structure 200, the lever sections 121 and 122 of the lever structure 120 on one side of the axis A1 each bend in an oscillating anti-phase manner inversely to the lever sections 123 and 124 of the lever structure 120 on the opposite side of the axis A1, in particular such that the lever sections 121 and 122 of the lever structure 120 on one side of the axis A1 bend upwards (with respect to a direction orthogonal to the plane of the drawing),when the lever sections 123 and 124 of the lever structure 120 on the opposite side of the axis A1 bend downwards (with respect to the direction orthogonal to the plane of the drawing), and the lever sections 121 and 122 of the lever structure 120 on one side of the axis A1 bend downwards (with respect to the direction orthogonal to the plane of the drawing), when the lever sections 123 and 124 of the lever structure 120 on the opposite side of the axis A1 bend upwards (with respect to the direction orthogonal to the plane of the drawing).

[0140] For example, an oscillating or swinging pivoting movement of the mirror support element 170 or the mirror 300 about the axis A1 can be driven by the actuator and / or sensor structure 200 via the connection points or connecting sections to the spring sections 131 and 132 of the spring structure 130. In particular, the oscillating or swinging pivoting movement of the mirror support element 170 or the mirror 300 can preferably be excited essentially at the resonant frequency (so-called resonant operation of the axis A1). The resonant frequency of the layer structure 10 with respect to oscillations about the axis A1 is preferably in the range greater than or equal to essentially 1 kHz and / or less than or equal to essentially 100 kHz. This also applies analogously to the exemplary embodiments described later.

[0141] In Fig. 1A, the lever and spring structure 120 / 130 of the layered structure 10 with the actuator and / or sensor structure 200 formed on the lever structure 120 is thus preferably designed and configured, by way of example, to hold the mirror support element 170 in such a way that an oscillating pivoting or rotational movement about the corresponding axis A1 (e.g., torsional oscillations) of the mirror support element 170 about the axis A1 (here, for example, an exemplary torsional axis) can be driven, e.g., for any 1D scanning movements of the mirror 300, preferably in particular in resonant operation.

[0142] In addition or alternatively, it is possible, for example, that an oscillating voltage is applied to the preferably piezoelectric activity sections 211 and 212 of the actuator and / or sensor structure 200 and a preferably in-phase oscillating voltage (without phase shift) is applied to the preferably piezoelectric activity sections 213 and 214 of the actuator and / or sensor structure 200, so that the lever sections 121 and 122 of the lever structure 120 on one side of the axis A1 each bend in an oscillating in-phase manner with the lever sections 123 and 124 of the lever structure 120 on the opposite side of the axis A1, in particular such that the lever sections 121 and 122 of the lever structure 120 on one side of the axis A1 bend upwards (with respect to a direction orthogonal to the plane of the drawing),when the lever sections 123 and 124 of the lever structure 120 on the opposite side of the axis A1 bend upwards (with respect to the direction orthogonal to the plane of the drawing), and the lever sections 121 and 122 of the lever structure 120 on one side of the axis A1 bend downwards (with respect to the direction orthogonal to the plane of the drawing), when the lever sections 123 and 124 of the lever structure 120 on the opposite side of the axis A1 bend downwards (with respect to the direction orthogonal to the plane of the drawing).

[0143] Thus, via the connection points or connecting sections to the spring sections 131 and 132 of the spring structure 130, an oscillating or swinging translational movement of the mirror support element 170 or the mirror 300 perpendicular to the axis A1 (in the Z direction, ie perpendicular to the plane of the drawing of the Fig. 1A) are driven by the actuator and / or sensor structure 200. In particular, the oscillating or vibrating translational movement of the mirror support element 170 or the mirror 300 can preferably be excited essentially at the resonance frequency (resonance frequency of a translational oscillation mode) (so-called resonant operation of the axis A1). This can be particularly suitable for applications or operation related to interferometry.

[0144] Fig. 1B shows an exemplary, schematic sectional view of the layer structure 10 for a MEMS device 20 according to Fig. 1A. This is in Fig. 1B an exemplary sectional view along the section line B- B according to Fig. 1A.

[0145] The exemplary layer structure 10 according to the sectional view in Fig. 1B includes, as already mentioned in relation to Fig. 1A, the structured functional layer 100 is described by way of example, wherein in particular the structured areas of the central mirror support section 170, the lever sections 123 and 122 and the frame section 110 are shown on the left and right (cf. dashed section line B - B according to Fig. 1A).

[0146] The mirror layer (e.g., the mirror 300) is shown as an example on the mirror support section 170. Above the left frame section 110 in Fig. 1B shows an example of a section of the conductor track 402 of the contact 400.

[0147] The exemplary layer structure 10 according to the sectional view in Fig. 1B includes, as already mentioned in relation to Fig. 1A, the structured actuator and / or sensor layer 200 (actuator and / or sensor structure) is described by way of example, wherein in particular the structured regions of the activity sections 213 and 212 are shown (cf. dashed section line B - B according to Fig. 1A).

[0148] By way of example, the exemplary layer structure 10 according to the sectional view in Fig. 1B also shows further layers, e.g., a supporting, structured structural layer (e.g., a silicon substrate layer), several intermediate layers (e.g., insulation layers, passivation layers, or dielectric layers). Also shown as examples are top electrodes of an electrode layer above the activity sections 213 and 212, which, merely by way of example, can be formed from the same layer (e.g., a metallic electrode layer) as the mirror 300.

[0149] Furthermore, in further examples, a bottom electrode layer can be provided between the functional layer 100 and the actuator and / or sensor layer 200 (actuator and / or sensor structure). Here, the functional layer 100 itself can also be used as a bottom electrode, for example, in embodiments in which the functional layer comprises electrically conductive material (e.g., doped silicon) or is formed from such an electrically conductive material.

[0150] It should be noted that in Fig. 1A and in other figures (e.g. Fig. 3, Fig. 8, Fig. 10, Fig. 11, Fig. 13 and Fig. 18) in plan views of exemplary embodiments of a respective layer structure for illustration purposes, essentially only the structured functional layer 100 and the structured actuator and / or sensor layer 200 (and possibly individual further aspects of the arrangement of the optional mirror 300 and an exemplary contact structure 400) are shown. Other possible features, such as any supporting structural layers, any one or more intermediate layers, any electrodes or electrode layers (e.g. top and / or bottom electrodes), are shown in Fig. 1A and in other figures (e.g. Fig. 3, Fig. 8, Fig. 10, Fig. 11, Fig. 13 and Fig. 18) are not shown, but can be used analogously to Fig. 1B can also be preferably provided in such embodiments.

[0151] Fig. 2 shows an exemplary, schematic sectional view of a MEMS device 20 with a layer structure 10 according to Fig. 1A.

[0152] Here, the layer structure according to Fig. 1B is closed from above with a translucent cover element 7 (e.g. a glass lid element) and from below with a base body element 8 (e.g. a base element), optionally preferably hermetically sealed under a vacuum atmosphere (e.g. vacuum encapsulation or vacuum-packed MEMS device).

[0153] In further exemplary embodiments, differently shaped cover elements or 3D-shaped cover elements are also possible (e.g., round, dome-shaped, square, angled, planar, etc.). The material of such cover elements is preferably translucent, e.g., glass or other optically transparent materials (e.g., for wavelengths of approximately 400-2500 nm), such as borosilicate glass (e.g., Borofloat® BF33 from SCHOTT).

[0154] Thus, a preferably vacuum-packed MEMS mirror device 20 (e.g., a MEMS mirror scanner, e.g., for laser projection or LIDAR applications) comprising the manufactured layer structure can be provided with piezoelectrically deflectable or controllable mirrors.

[0155] Analogously, further embodiments of MEMS devices, e.g. with a respective layer structure according to further figures (e.g. Fig. 3, Fig. 8, Fig. 10, Fig. 11, Fig. 13 and Fig. 18).

[0156] For example, all of the following layer structure examples can each be provided analogously in a corresponding MEMS device 20, e.g. by closing the respective exemplary layer structure from above with a translucent cover element 7 and from below with a base body element 8 (base element), optionally preferably hermetically sealed under a vacuum atmosphere (e.g. vacuum encapsulation or vacuum-packed MEMS device).

[0157] Fig. 3 shows an exemplary schematic top view of a layer structure 10 for a MEMS device 20 according to some embodiments.

[0158] By way of example, the layer structure 10 comprises Fig. 3 analogous to Fig. 1A a functional layer 100, which comprises, for example, the frame section 110 closed on the reverse. The inner MEMS structure of the functional layer 100 comprises, analogously to Fig. 1A shows, by way of example, the (optional) lever sections 121 to 124 of the lever structure 120 of the functional layer 100, the spring sections 131 and 132 of the spring structure 130 of the functional layer 100 and the inner support section 170 (mirror support section 170) of the functional layer 100, on which, by way of example, a mirror 300 is arranged.

[0159] By way of example, respective activity sections 211 to 214 of the actuator and / or sensor structure 200 of the layered structure 10 are again formed on the lever sections 121 to 124 of the lever structure 120. These activity sections 211 to 214 of the actuator and / or sensor structure 200 can, in preferred embodiments, be designed as and / or comprise actuators and / or sensors or actuator and / or sensor layers.

[0160] In contrast to the background example according to Fig. 1A and Fig. 1B are in some embodiments according to Fig. 3 the lever sections 121 to 124, on which the activity sections 211 to 214 of the actuator and / or sensor structure 200 are formed and / or arranged, are not directly rigidly connected or anchored to the outer frame structure of the frame section 110.

[0161] By way of example, the functional layer 100 comprises Fig. 3 further shows exemplary adjustment range sections 181 to 184 of an adjustment structure 180 of the layered structure 10 of the MEMS device. In particular, each of the adjustment range sections 181 to 184 of the functional layer 100 is arranged, by way of example, in the region of a respective anchoring of the inner MEMS structure to the outer frame structure of the frame section 110.

[0162] For example, each lever section 121 to 124 of the lever structure 120 of the functional layer 100 is not directly rigidly connected to the frame section 110 at the end facing away from the spring structure 130 of the functional layer 100, but rather to a respective one of the adjustment range sections 181 to 184 of the adjustment structure 180 of the functional layer 100. The respective adjustment range section 181 to 184 of the adjustment structure 180 of the functional layer 100 is, for example, rigidly connected to the frame section 110 on the side facing away from the corresponding lever section 121 to 124 of the lever structure 120.

[0163] On the side of the lever sections 121 and 123 facing the axis A1, the lever sections 121 and 123 are each connected, for example, to the corresponding spring section 131 of the spring structure 130, and on the side of the lever sections 121 and 123 facing away from the axis A1, the lever sections 121 and 123 are connected, for example, mirror-symmetrically with respect to the axis A1 to the respective adjustment range sections 181 and 183 of the adjustment structure 180.

[0164] On the side of the adjustment range sections 181 and 183 of the adjustment structure 180 which faces away from the axis A1 and / or the lever sections 121 and 123, the respective adjustment range sections 181 and 183 of the adjustment structure 180 are each connected (preferably rigidly) to the frame structure or the frame section 110 or anchored thereto (preferably rigidly).

[0165] On the side of the lever sections 122 and 124 facing the axis A1, the lever sections 122 and 124 are each connected, for example, to the corresponding spring section 132 of the spring structure 130, and on the side of the lever sections 122 and 124 facing away from the axis A1, the lever sections 122 and 124 are each connected, for example, mirror-symmetrically with respect to the axis A1, to the respective adjustment range sections 182 and 184 of the adjustment structure 180.

[0166] On the side of the adjustment range sections 182 and 184 of the adjustment structure 180 which faces away from the axis A1 and / or the lever sections 121 and 123, the respective adjustment range sections 182 and 184 of the adjustment structure 180 are each connected (preferably rigidly) to the frame structure or the frame section 110 or anchored thereto (preferably rigidly).

[0167] As an example, the layer structure 10 according to Fig. 3, a contact 400 is provided, which includes exemplary conductor tracks 411 to 414 for contacting the activity sections 211 to 214 of the actuator and / or sensor structure 200. By way of example, the conductor tracks 411 to 414 are each provided for contacting the corresponding activity sections 211 to 214.

[0168] For example, by applying an oscillating voltage to the preferably piezoelectric activity sections 211 and 212 of the actuator and / or sensor structure 200 via the conductor tracks 411 and 412 and by applying a preferably antiphase oscillating voltage (phase shift, for example, essentially 180°) to the preferably piezoelectric activity sections 213 and 214 of the actuator and / or sensor structure 200 via the conductor tracks 413 and 414, it is possible to Fig. 1A, an oscillating or swinging pivoting movement of the mirror support element 170 or the mirror 300 about the axis A1 can be driven by the actuator and / or sensor structure 200 via the connection points or connection sections to the spring sections 131 and 132 of the spring structure 130.

[0169] In particular, the oscillating or swinging pivoting movement of the mirror support element 170 or the mirror 300 of the respective oscillation mode can preferably be excited essentially at the corresponding resonance frequency (so-called resonant operation of the axis A1). The resonance frequency of the layer structure 10 with respect to oscillations about the axis A1 is preferably in the range greater than or equal to essentially 1 kHz and / or less than or equal to essentially 100 kHz. This also applies analogously to the embodiments described later.

[0170] In Fig. 3, the lever and spring structure 120 / 130 of the layer structure 10 with the actuator and / or sensor structure 200 formed on the lever structure 120 is thus preferably designed and configured, by way of example, to hold the mirror support element 170 in such a way that an oscillating pivoting or rotational movement about the corresponding axis A1 (e.g. torsional oscillations) of the mirror support element 170 about the axis A1 (here, for example, an exemplary torsional axis) can be driven, e.g. for any 1D scanning movements of the mirror 300, preferably in particular in resonant operation.

[0171] Furthermore, by excitation of the piezoelectric activity sections 211 to 214 in phase, it is possible to drive a translational mode of the oscillation of the mirror support element 170 or the mirror 300, particularly preferably also substantially resonantly, e.g., for interferometry applications. This applies analogously to further embodiments.

[0172] However, due to process tolerances in the manufacturing process of the layered structure, the respective resonance frequencies of the respective MEMS devices can fluctuate within the range of the process tolerances. Furthermore, process tolerances can lead to symmetry errors within the range of the process tolerances, which affect the vibration behavior in resonant and / or non-resonant operation. Furthermore, thermal influences can occur during operation of the MEMS device.

[0173] To compensate for such influences, the adjustment range sections 181 to 184 of the adjustment structure 180 of the functional layer 100 provide, for example, an adjustment or readjustment function which allows the resonance frequency of the MEMS structure to be readjusted and / or adjusted during operation and / or to statically, quasi-statically and / or dynamically compensate for any symmetry errors and / or thermal influences in resonant operation and / or in non-resonant operation by, for example, readjusting and / or adjusting the spatial position of the lever structure 120, for example by translational and / or rotational displacement.

[0174] By way of example, the adjustment range sections 181 to 184 of the adjustment structure 180 of the functional layer 100 according to Fig. 3 respective openings 501 to 504 in the functional layer 100, which form exemplary deformable adjustment regions of the functional layer 100.

[0175] Fig. 4A shows an exemplary, schematic plan view of a detailed view of the exemplary adjustment area 183 of the layer structure 10 according to Fig. 3. Fig. 4B shows an exemplary, schematic sectional view of an adjustment area of ​​the layer structure according to Fig. 4A. The other control areas 181, 182 and 184 according to Fig. 3 are provided as examples.

[0176] By way of example, the respective openings 501 to 504 in the adjustment area sections 181 to 184 of the adjustment structure 180 of the functional layer 100 are each elongated or strip-shaped and, by way of example, preferably extend substantially transversely to the lever sections 121 to 124 and / or, by way of example, preferably substantially parallel to the axial direction of the axis A1.

[0177] By way of example, the respective openings 501 to 504 in the adjustment area sections 181 to 184 of the adjustment structure 180 of the functional layer 100 preferably extend in Fig. 3, for example, preferably substantially parallel to the frame section 110 (or, for example, substantially tangentially in the case of some embodiments with at least partially arcuate frame sections) in the region of the anchoring of the respective adjustment area section 181 to 184 of the adjustment structure 180 of the functional layer 100.

[0178] By way of example, the adjustment range sections 181 to 184 of the adjustment structure 180 of the functional layer 100 according to Fig. 3 in the region of the respective openings 501 to 504 a respective adjustment region of the functional layer 100 which has a higher rigidity in the longitudinal direction of the openings 501 to 504 than in the direction transverse to the longitudinal direction of the openings 501 to 504 in the plane of the functional layer 100, in particular in the direction pointing to the respective lever sections 121 to 124 transverse to the longitudinal direction of the openings 501 to 504.

[0179] It should be noted that the present disclosure is not limited to adjustment range sections 181 to 184 of the adjustment structure 180, each with only one elongated or strip-shaped opening. Even with just one elongated or strip-shaped opening in each adjustment range, a spatial displacement or translational and / or rotational adjustment movement of the respective lever section 121 to 124 transverse to the one opening can be achieved. Furthermore, multiple openings per adjustment range are possible in further embodiments, for example, parallel longitudinal openings, as well as more complex opening patterns in the adjustment range.

[0180] Preferably, the opening pattern of the respective adjustment region in some embodiments with one or more openings in the respective adjustment region section 181 to 184 of the adjustment structure 180 is preferably such that the adjustment region sections 181 to 184 of the adjustment structure 180 of the functional layer 100 form, in the region of the respective one or more openings, a respective adjustment region of the functional layer 100 which has a higher rigidity in a first direction (preferably in the plane of the functional layer 100) than in a second direction transverse to the first direction (preferably in the plane of the functional layer 100), and thus preferably at least in the second direction (e.g. elastic orelastically resilient), in particular preferably with at least one component in a direction parallel to the plane of the frame 110 and / or preferably with at least one component parallel to the layer plane of the functional layer 100, in particular stretchable and / or compressible.

[0181] Fig. 4C and Fig. 4D show the exemplary, schematic top view of the adjustment area 183 according to Fig. 4A for the respective illustration of exemplary displacements, in particular by exemplary deformation of the adjustment range in the region of the opening 503, for example in the X direction.

[0182] The above-described adjustment range sections 181 to 184 of the adjustment structure 180 of the functional layer 100 advantageously enable, for example, a spatial displacement or translational adjustment movement of the connection points of the lever sections 121 to 124 on the respective adjustment range section 181 to 184 of the functional layer 100 in the X-direction by deformation, in particular stretching or compression, of the respective adjustment range in the region of the respective openings 501 to 504 on the respective adjustment range section 181 to 184 in the direction transverse to the longitudinal direction of the openings 501 to 504 (see, for example, arrows in Fig. 4C and Fig. 4D) or transverse to the axial direction of the axis A1 (e.g. X-direction).

[0183] The respective spatial displacement or actuating movement of the respective lever section 121 to 124 can, in some embodiments, be driven by one or more exemplary actuating actuators 601 to 604 (particularly preferably microactuators), particularly preferably by corresponding actuating actuators that, during operation of the MEMS device, can statically, quasi-statically, and / or dynamically generate a force driving the deformation or actuating movement. In some embodiments, such one or more actuating actuators can be arranged in the respective actuating area or, preferably, on, next to, above, and / or below the openings 501 to 504.

[0184] In some embodiments, such actuators may comprise microactuators and / or particularly preferably comprise magnetic actuators, piezoelectric actuators and / or electrical, electromagnetic and / or electrostatic actuators.

[0185] In some embodiments according to Fig. 3 and 4A to 4D, a respective capacitor (capacitive actuator) is provided as an exemplary actuator 601 to 604 at each of the openings 501 to 504, wherein respective capacitor plate sections 601a to 604a and 601b to 604b are arranged, for example, on opposite sides of the respective openings 501 to 504, which can be controlled via respective conductor tracks 401a to 404a and 401b to 404b of the contact 400.

[0186] An example is Fig. 4A the setting range of the setting range section 183 according to Fig. 3, including an exemplary sectional view according to Fig. 4B. By way of example, the adjustment area comprises the opening 503 formed in the functional layer 100, which extends, for example, longitudinally in the Y direction, for example parallel to the adjacent section of the rigid frame of the frame section 110.

[0187] By way of example, electrode sections 603a and 603b form capacitor plate sections of a capacitor on opposite sides of the opening 503 in the X direction (transverse to the longitudinal direction of the elongated, for example strip-shaped opening 503) for the exemplary formation of a control actuator 603. The electrode sections 603a and 603b can be electrically controlled, for example, via the conductor tracks 403a and 403b of the contact 400.

[0188] If, for example, a voltage of the same sign is applied to both electrode sections 603a and 603b, the electrode sections 603a and 603b are pressed apart in the X-direction by a repulsive electrical force, resulting in a deformation in the X-direction in which the lever section 123 is displaced inwards in the X-direction away from the frame section 110; see e.g. Fig. 4C.

[0189] If, for example, a voltage of opposite sign is applied to both electrode sections 603a and 603b, the electrode sections 603a and 603b are pulled together in the X-direction by an attractive electrical force, resulting in a deformation in the X-direction in which the lever section 123 is displaced outwards in the X-direction towards the frame section 110; see e.g. Fig. 4D.

[0190] For example, according to Fig. 4C and Fig. 4D, a spatial displacement or, for example, a translational actuating movement of the lever section 123 toward or away from the axis A1 (e.g., in the X direction) can be generated. Analogous actuating movements of the other lever sections 121, 122, and 124 of the lever structure 120 can be carried out via the actuating actuators 601, 602, and 604 of the respective actuating range sections 181, 182, and 184, e.g., uniformly to readjust or adjust the resonant frequency or individually to compensate for any tolerance-related symmetry errors.

[0191] This allows the resonant frequency of the MEMS structure to be adjusted or readjusted during operation by adjusting the lever sections 121 to 124 of the lever structure 120, for example, transversely to the axial direction of axis A1. Thus, by adjusting all lever sections 121 to 124 in the same way (e.g., by applying the same control voltages to all actuators O1 to O4), the resonant frequency of the oscillation of the support section 170 about axis A1 can be adjusted or tuned during operation.

[0192] The inventors discovered that the resonant frequency of the MEMS structure can be actively lowered and / or increased during operation in a range essentially from approximately 1 to 5%, in particular even up to ±10%. This allows for the compensation of any process tolerances and also enables application-optimized tuning of the oscillation during resonant operation. Furthermore, by individually adjusting the respective lever sections 121 to 124, any process-related symmetry errors during operation of the respective MEMS device can be compensated. Furthermore, by dynamically adjusting the respective lever sections 121 to 124, any thermal influences during operation can be compensated.

[0193] For example, the actuating movement can be set statically, e.g., with a displacement maintained statically during operation, or even quasi-statically. This applies analogously to the embodiments described later.

[0194] Quasi-static dynamic adjustment or adjustment here means that the actuating movement of one or more actuating ranges can be variably adjusted over time during operation of the MEMS device, e.g., for variably compensating for time-dependent thermal influences. The change in the displacement position is preferably slow compared to the resonance frequency in resonant operation and / or to the driven oscillation in non-resonant operation (e.g., with a frequency of substantially 1 / 10 of the respective oscillation frequency or less, or with a rate of change of substantially 1 / 10 of the rate of change of the corresponding oscillation amplitude or less). This applies analogously to the embodiments described later.

[0195] In further embodiments, it is additionally or alternatively possible to vary the actuating movements dynamically, for example, with change rates in the range of the change rate of the corresponding oscillation amplitude and / or with a frequency greater than 1 / 10 of the oscillation frequency, for example, to dynamically compensate for angle-dependent manufacturing tolerances in an angle-dependent manner, possibly dynamically in the range of the oscillation frequency (e.g., with or without static, quasi-static, and / or dynamic phase shift). This applies analogously to the embodiments described later.

[0196] According to Fig. 3 and Fig. 4A, the adjustment ranges of the adjustment range sections 181 to 184 of the functional layer 100 comprise, by way of example, further (optional) spring sections 181a to 184a and 181b to 184b.

[0197] According to Fig. 4A, the adjustment range of the adjustment range section 183 of the functional layer 100 comprises, for example, further (optional) spring sections 183a and 183b, which are designed, for example, as bending springs 183a and 183b. These spring sections 183a and 183b are arranged, for example, in a direction transverse to the displacement direction on opposite sides of the adjustment range of the adjustment range section 183 of the functional layer 100 and can, for example, hold the lever section 123 from both sides in order to guide the displacement of the lever section 123.

[0198] Furthermore, the (optional) spring sections 183a and 183b can lead any conductor tracks of the contact into the actuating area or to the lever sections, here, for example, the conductor tracks 403b to the movable electrode 603b of the capacitor of the exemplary actuating actuator 603 and the conductor track 413 to the activity section 213 of the sensor and actuator structure 200 for driving the oscillation of the movable element 170 / 300. Merely as an example, on both sides in Fig. 4A, three optional spring sections 183a and 183b are provided.

[0199] In further embodiments, only one or two or even more than three spring sections 183a and 183b may be provided. Such (optional) spring sections 183a and 183b may also be provided as meander springs, spiral springs, and / or single- or multiply-folded springs or free-form spring sections.

[0200] Fig. 5 shows an exemplary functional schematic representation of a layer structure 10 for a MEMS device 20 according to Fig. 3.

[0201] Fig. 5 shows, by way of example, the preferably rigid frame structure (e.g., frame section 110), which is preferably closed on all sides, and the centrally held movable element (e.g., the support section or mirror support section 170). The centrally held movable element is held in a swingable manner, for example, via the lever sections 121 to 124 of the lever structure 120 and the spring sections 131 and 132 of the spring structure 130.

[0202] The respective sections 212 to 224 of the actuator and / or sensor structure 200 are each assigned to one of the lever sections 121 to 124 of the lever structure 120 and are schematically functionally represented as capacities in Fig. 5 shown.

[0203] Here, Fig. 5, the lever sections 121 to 124 of the lever structure 120 are also functionally schematically illustrated as spring symbols, as these are attached or connected to the frame structure on one side via the exemplary adjustment range sections 181 to 184, but can bend during operation (e.g., oscillating bending when driving the vibration in an oscillating manner by applying a correspondingly oscillating voltage to the sections 212 to 224 of the actuator and / or sensor structure 200). Thus, a springy effect can also be exerted functionally on the lever sections 121 to 124 of the lever structure 120 (preferably with a higher torsional and / or spring stiffness compared to the preferably softer spring sections 131 and 132 of the spring structure 130 with comparatively low torsional and / or spring stiffness).

[0204] An exemplary advantage results from the fact that the lever sections 121 to 124 of the lever structure 120 already experience a deflection during operation at the connection points to the respective spring sections 131 and 132 of the spring structure 130, which deflection is passed on to the spring sections 131 and 132 of the spring structure 130 and is further amplified at the spring sections 131 and 132 by their own torsional and / or spring movement, so that the deflection passed on to the element to be deflected (e.g., the inner support section or the mirror support element 170) can be significantly amplified. This can be referred to as deflection amplification or "amplitude amplification". Consequently, with the same power consumption, significantly larger deflection amplitudes can be achieved without increased stress on the springs, or it is possible to reduce the power consumption required for desired deflection amplitudes.

[0205] This advantageously provides the possibility of achieving higher deflection amplitudes of the carrier section 170 with the same power consumption, or of achieving consistent deflection amplitudes even at lower power consumption, particularly compared to conventional MEMS designs with actuators arranged on or at the frame structure and / or on the springs. In the case of consistent deflection amplitudes of the carrier section 170 with even lower power consumption, the spring sections of the spring structure 130 experience less deformation, so that the spring sections of the spring structure 130 are better protected against stress and / or experience less wear with a lower risk of breakage, or have a longer service life.

[0206] Examples are the respective lever sections 121 to 124 in Fig. 5 are not anchored rigidly on the outside directly to the rigid frame structure 110, but rather via the respective adjustment range sections 181 to 184. The adjustment range sections 181 to 184 are shown here as spring sections in the X direction, for example, in order to schematically illustrate the deformation potential in the X direction. In the Y direction, the adjustment range sections 181 to 184 are shown as rigid, functionally schematic, for example. The actuators 601 to 604 are shown here as capacitors, for example.

[0207] An example is Fig. 5 an exemplary basic concept in which an inner holding and spring structure (here, for example, the lever structure 120 and the spring structure 130) holds the movable element 170 and an oscillation of the movable element 170 with respect to the axis A1 can be driven relative to the outer frame structure 110 via actuators provided on the inner holding and spring structure (here, for example, the actuators 211 to 214), in particular preferably in a resonant oscillation mode, such as a pivoting oscillation about the axis A1. In contrast to generic MEMS structures, however, the inner holding and spring structure is not directly rigidly anchored on the outside to the outer frame structure, but comprises additional adjustment areas in the area of ​​the anchoring, which enable displacement orEnable adjustment movement of the anchoring of the inner holding and spring structure relative to the frame structure 110, in particular parallel to the plane of the frame structure 110 (here, for example, parallel to the X / Y plane or, for example, in the X direction).

[0208] It should be noted that this is not limited to the fact that a translational displacement or adjusting movement can be driven in the X / Y plane, but that in further embodiments a translational and / or rotational displacement or adjusting movement can be generated in the respective adjusting range, which comprises at least one component parallel to the plane of the frame or the X / Y plane.

[0209] It should also be noted that this is not limited to the actuators 601 to 604 being designed as capacitors. In particular, the actuators 601 to 604 can be designed as magnetic, piezoelectric, electrical, electromagnetic, and / or electrostatic microactuators.

[0210] Fig. 6 shows an exemplary, schematic top view of a detailed view of an adjustment area of ​​a layer structure 10 for a MEMS device 20 according to some further embodiments. This corresponds, for example, to the structure according to Fig. 4A, wherein the actuator 603 is designed, for example, as a comb drive with static comb drive electrodes 603a and movable comb drive electrodes 603b on opposite sides of the opening 503 of the actuating area.

[0211] Fig. 7 shows an exemplary, schematic top view of a detailed view of an adjustment area of ​​the layer structure for a MEMS device according to some further embodiments. This corresponds, for example, to the structure according to Fig. 4A, wherein the actuator 603 is designed, for example, as a piezoelectric microactuator acting in the X-direction or transversely to the longitudinal direction of the opening 503.

[0212] In the following, exemplary embodiments are described with regard to actuators designed as capacitors, wherein, analogously to the above embodiments, the respective actuators 601 to 604 are designed as magnetic, piezoelectric (e.g. according to Fig. 6), electrical, electromagnetic and / or electrostatic microactuators can be formed, including the possibility of a comb drive according to Fig. 6. In addition, different actuators can be provided at different control ranges.

[0213] In the following, exemplary further embodiments are described with respect to exemplary 2D MEMS designs with two axes A1 and A2. In some preferred embodiments, the exemplary layer structure 10 (e.g., according to Fig. 8 to 14 and 18) are each preferably designed so that oscillating vibrations of the central, movable element about the axes A1 and / or A2 can be driven separately from one another and / or together, particularly preferably the oscillating vibration of the central, movable element about the axes A1 and / or A2 via an oscillating voltage applied to actuators of the actuator and / or sensor structure 200.

[0214] Here, the exemplary layer structure is preferably designed for operation at substantially the resonant frequency with respect to axis A1 (so-called resonant operation) and / or for operation at substantially the resonant frequency with respect to axis A2. In preferred embodiments, the resonant frequencies of both axes A1 and A2 are preferably in the range greater than or equal to substantially 1 kHz and / or less than or equal to substantially 100 kHz. This applies analogously to the embodiments described later.

[0215] In these embodiments, an oscillating or swinging pivoting movement of the mirror support element 170 or the mirror 300 about two axes A1 and A2, which are aligned transversely to one another, can therefore preferably be driven by the actuator and / or sensor structure 200. This applies analogously to the embodiments described later.

[0216] In particular, the oscillating or swinging pivoting movement of the mirror support element 170 or the mirror 300 about two axes A1 and A2 can preferably be excited essentially at least in one of the axes A1 and A2 at the respective resonant frequency (so-called resonant operation with one resonantly driven axis or bi-resonant operation with both resonantly driven axes). This applies analogously to the embodiments described later.

[0217] In further embodiments, the layer structure 10 can also be designed for a quasi-static excitation in one or both axes A1 and / or A2, e.g., for an oscillation far below the actual resonant frequency(ies) of the axes A1 and / or A2. This applies analogously to the embodiments described later.

[0218] In some embodiments, the resonant frequency of the respective layer structure 10 with respect to vibrations about the first axis A1 is preferably in the range greater than or equal to substantially 1 kHz and / or less than or equal to substantially 100 kHz. Preferably, the resonant frequency of the respective layer structure 10 with respect to vibrations about the second axis A2 in preferred embodiments is in the range greater than or equal to substantially 1 kHz and / or less than or equal to substantially 100 kHz. This applies analogously to embodiments described later.

[0219] Preferably, the resonant frequency of the respective layer structure 10 with respect to vibrations about the fast axis of the axes A1 and A2 in some embodiments is essentially an integer multiple (e.g., N = 1, 2, 3, 4, 5, ...) of the resonant frequency of the respective layer structure 10 with respect to vibrations about the slow axis of the axes A1 and A2. Here, the A1 axis can be the fast or the slow axis if the A2 axis is the slow or the fast axis. This applies analogously to the embodiments described later. The case N = 1 means, in particular, by way of example, that the layer structure 10 has essentially the same resonant frequency in both axes A1 and A2. Thus, the ratio of the resonant frequencies of the respective layer structure 10 with respect to vibrations about the axes A1 and A2 (or A2 and A1) in preferred embodiments is essentially a (positive) integer (e.g., N = 1, 2, 3, 4, 5, ...).) or a (positive) rational number, preferably e.g. an inverse of a (positive) integer number, e.g. essentially 1 / 1, 1 / 2, 1 / 3, 1 / 4, ... etc. This applies analogously to embodiments described later.

[0220] In contrast to the preceding embodiments with only one axis A1, the following embodiments have two axes A1 and A2, which are aligned transversely, in particular perpendicularly, to each other. Furthermore, for structural stabilization of the two axes A1 and A2, the respective axes are separated from each other by providing separate spring structures 130 (as an exemplary outer spring structure 130 for axis A1) and 160 (as an exemplary inner spring structure for axis A2). This applies analogously to the embodiments described later.

[0221] By way of example, the following exemplary embodiments have a central frame section 140, which, as seen in plan view, is closed on all sides. The central frame section 140 can be pivotably held on the outside about the axis A1 by the spring sections of the (outer) spring structure (and optionally via an optional outer lever structure 120), similar to the mirror support section 170 in the preceding exemplary embodiments. This applies analogously to the exemplary embodiments described later.

[0222] The mirror support section 170 can be pivotally mounted on the central frame section 140 about the axis A2 via the exemplary inner spring structure 160 (and possibly via an optional inner lever structure). In particular, the mirror support section 170 can be pivotally mounted on the central frame section 140 about the axis A2 via the exemplary inner spring structure 160; see, for example, embodiments according to Fig. 8 to 12 and 18. In further embodiments, the mirror support section 170 can be pivotally supported on the central frame section 140 about the axis A2 indirectly via the exemplary inner spring structure 160 and directly via an inner lever structure; see, for example, Fig. 13 and Fig. 14.

[0223] The exemplary layer structure 10 according to Fig. 8 to 14 and 18 is embodied, by way of example, as a layered structure 10 for a MEMS mirror device 20, in which a central, movable element, here, by way of example, a mirror 300, can be held so as to be rotatable or pivotable about two axes A1 and A2, respectively, and can be driven in an oscillating manner, by way of example, so as to be rotatable or pivotable about the axes A1 and A2, respectively; e.g., a 2D micromirror or a 2D MEMS mirror device. This applies analogously to the embodiments described later.

[0224] Here, the layer structure is preferably designed, by way of example, for two-dimensional Lissajous scanning movements of the central support section 170 or the mirror support section 170 with optional mirror 300, e.g., for laser scanners and / or laser projection scanners with Lissajous scanning operation. This applies analogously to the embodiments described later.

[0225] In the following, exemplary embodiments are described with respect to exemplary 2D MEMS designs with two axes A1 and A2, in which the drive structures (e.g., the actuator and / or sensor structure 200) are provided externally on the outer lever structure 120 in order to drive both axes A1 and A2 from the outside.

[0226] In these embodiments, the inner lever structure and / or inner activity sections arranged on the inner lever structure can advantageously be omitted. This results in the advantage that no conductor tracks for inner activity sections need to be provided on the spring sections, nor do any activity sections (such as piezo structures) need to be provided on the springs. Thus, the stress effect on the spring sections can advantageously be further reduced.

[0227] Fig. 8 shows an exemplary schematic top view of a layer structure 10 for a MEMS device 20 according to some further embodiments.

[0228] In some embodiments according to Fig. 8, the frame section 100 of the functional layer 100, the adjustment range sections 181 to 184 of the adjustment structure 180 of the functional layer 100, the lever sections 121 to 124 of the lever structure 120 of the functional layer 100 and the activity sections 211 to 214 of the actuator and / or sensor structure 200 are exemplary analogous to Fig. 3 trained.

[0229] In addition, respective actuating actuators 610 to 604 are formed on the actuating area sections 181 to 184 of the actuating structure 180 of the functional layer 100, for example, which Fig. 8 exemplary analogue Fig. 3 or Fig. 4A (and in further embodiments also analogous Fig. 6 and Fig. 7 may be trained).

[0230] The exemplary structured functional layer 100 according to Fig. 8 comprises, for example, an inner mirror support section 170 (as an exemplary central, movable element), on which, for example, the mirror 300 is arranged (e.g., as an applied mirror layer).

[0231] The structured functional layer 100 according to Fig. 8 comprises, for example, an outer frame section 110 (outer frame structure) which is, as seen in plan view, closed on all sides (preferably rigid).

[0232] The structured functional layer 100 according to Fig. 8 comprises, for example, an inner frame section 140 (inner frame and / or holding structure) which is closed on the inside as seen in plan view and which, in this purely exemplary embodiment, is Fig. 8 is designed in a top view, for example, round or circular or ring-shaped.

[0233] In further embodiments, the inner frame section 140, which is closed on all sides, can also have other shapes in the interior and / or exterior areas, such as oval or angular, e.g., polygonal, e.g., a polygon with three or more corners, e.g., rectangular, square, hexagonal, etc. In further embodiments, any corners in the interior and / or exterior areas of the inner frame section can also be rounded. This also applies analogously to the embodiments described above and below.

[0234] The inner frame section 140 preferably has a web width substantially greater than or equal to 20 µm, in particular substantially greater than or equal to 30 µm, particularly preferably substantially greater than or equal to 40 µm. The inner frame section 140 preferably has a web width substantially less than or equal to 200 µm, in particular substantially less than or equal to 100 µm, and particularly preferably substantially less than or equal to 80 µm. This applies analogously to the above and below exemplary embodiments.

[0235] The mirror carrier section 170 of the structured functional layer 100 according to Fig. 8 is connected, for example, via an inner spring structure 160 of the structured functional layer 100 to the inner frame section 140 of the structured functional layer 100. The inner spring structure 160 of the structured functional layer 100 according to Fig. 8 includes, for example, several (here according to Fig. 8 shows, by way of example, two spring sections 161 and 162. The spring sections 161 and 162 of the inner spring structure 160 of the structured functional layer 100 can be designed as bending and / or torsion springs of various shapes and sizes, e.g., as torsion springs, double torsion springs, single or multiple folded springs, double folded springs, and / or meander or serpentine springs. This also applies analogously to the exemplary embodiments described above and below.

[0236] Preferably, the spring sections 161 and 162 have web widths substantially greater than or equal to 10 µm, and in particular substantially greater than or equal to 20 µm, particularly preferably substantially greater than or equal to 40 µm. Preferably, the spring sections 161 and 162 have web widths substantially less than or equal to 200 µm, in particular substantially less than or equal to 100 µm, and particularly preferably substantially less than or equal to 80 µm. This applies analogously to embodiments described later.

[0237] The spring sections 161 and 162 of the inner spring structure 160 are connected, for example, to opposite sides of the mirror support section 170 in the direction of the axis A2, in particular to the inwardly facing ends of the respective spring sections 161 and 162 of the inner spring structure 160.

[0238] At the ends of the spring sections 161 and 162 facing away from the mirror support section 170, the inner spring structure 160 is connected, for example, to the inner frame section 140.

[0239] The inner frame section 140 of the structured functional layer 100 according to Fig. 8 is connected, for example, via an outer spring structure 130 of the structured functional layer 100 to the lever structure 120 of the structured functional layer 100. The outer spring structure 130 of the structured functional layer 100 according to Fig. 8 includes, for example, several (here according to Fig. 8 example two) spring sections 131 and 132 (exemplarily analogous Fig. 3).

[0240] The spring sections 131 and 132 can be designed as bending and / or torsion springs of various shapes and sizes, e.g., as torsion springs, double torsion springs, single or multiple folded springs, double folded springs, and / or meander or serpentine springs. Preferably, the spring sections 131 and 132 have web widths substantially greater than or equal to 10 µm, in particular substantially greater than or equal to 20 µm, particularly preferably substantially greater than or equal to 40 µm. Preferably, the spring sections 131 and 132 have web widths substantially less than or equal to 200 µm, in particular substantially less than or equal to 100 µm, and particularly preferably substantially less than or equal to 80 µm. This applies analogously to embodiments described later.

[0241] The spring sections 131 and 132 of the outer spring structure 130 are connected, for example, to opposite sides of the inner frame section 140 in the direction of the axis A1, in particular to the inwardly facing ends of the respective spring sections 131 and 132 of the outer spring structure 130.

[0242] At the ends of the spring sections 131 and 132 facing away from the inner frame section 140, the outer spring structure 130 is connected, for example, to the (outer) lever structure 120 (e.g. analogous Fig. 3). The lever structure 120 of the structured functional layer 100 according to Fig. 8 includes, for example, several (here according to Fig. 8 example four) lever sections 121 to 124 (e.g. analogous Fig. 3).

[0243] The lever sections 121 to 124 of the lever structure 120 of the structured functional layer 100 according to Fig. 6 are each connected indirectly to the frame section 110 on one side via the respective adjustment range sections 181 to 184 (e.g. as an exemplary anchoring of the lever structure 120 via the respective adjustment range sections 181 to 184 to the frame section 110 of the structured functional layer 100; e.g. analogous Fig. 3).

[0244] On the opposite side to the frame section 110, the lever sections 121 to 124 of the lever structure 120 of the structured functional layer 100 are each connected, for example, to one of the spring sections 131 and 132 of the outer spring structure 130 of the structured functional layer 100 (e.g. analogous Fig. 3).

[0245] By way of example, the functional layer 100 comprises the adjustment range sections 181 to 184 of the adjustment structure 180 of the layered structure 10 of the MEMS device. In particular, by way of example, each of the adjustment range sections 181 to 184 of the functional layer 100 is arranged on a respective anchoring of the inner MEMS structure to the outer frame structure of the frame section 110.

[0246] For example, each lever section 121 to 121 of the lever structure 120 of the functional layer 100 is not directly rigidly connected to the frame section 110 at the end facing away from the spring structure 130 of the functional layer 100, but rather to a respective one of the adjustment range sections 181 to 184 of the adjustment structure 180 of the functional layer 100. The respective adjustment range section 181 to 184 of the adjustment structure 180 of the functional layer 100 is rigidly connected to the frame section 110 on the side facing away from the corresponding lever section 121 to 124 of the lever structure 120.

[0247] On the side of the lever sections 121 and 123 facing the axis A1, the lever sections 121 and 123 are each connected, for example, to the corresponding spring section 131 of the spring structure 130, and on the side of the lever sections 121 and 123 facing away from the axis A1, the lever sections 121 and 123 are connected, for example, mirror-symmetrically with respect to the axis A1 to the respective adjustment range sections 181 and 183 of the adjustment structure 180. On the side of the adjustment range sections 181 and 183 of the adjustment structure 180 which faces away from the axis A1 and / or the lever sections 121 and 123, the respective adjustment range sections 181 and 183 of the adjustment structure 180 are each connected (preferably rigidly) to the frame structure or the frame section 110 or anchored thereto (preferably rigidly).

[0248] On the side of the lever sections 122 and 124 facing the axis A1, the lever sections 122 and 124 are each connected, for example, to the corresponding spring section 132 of the spring structure 130, and on the side of the lever sections 122 and 124 facing away from the axis A1, the lever sections 122 and 124 are each connected, for example, mirror-symmetrically with respect to the axis A1, to the respective adjustment range sections 182 and 184 of the adjustment structure 180. On the side of the adjustment range sections 182 and 184 of the adjustment structure 180 which faces away from the axis A1 and / or the lever sections 121 and 123, the respective adjustment range sections 182 and 184 of the adjustment structure 180 are each connected (preferably rigidly) to the frame structure or the frame section 110 or anchored thereto (preferably rigidly).

[0249] The spring sections 131 and 132 of the outer spring structure 130 of the structured functional layer 100 are each connected, for example, to the inner frame section 140 of the structured functional layer 100, in particular, for example, on opposite sides of the inner frame section 140 in the direction of the axis A1.

[0250] The inner frame section 140 of the structured functional layer 100 is held, for example, via the spring sections 131 and 132 of the outer spring structure 130, the lever sections 121 to 124 of the lever structure 120 and the adjustment range sections 181 to 184 of the adjustment structure 180 on the outer frame section 110 of the structured functional layer 100, in particular, for example, pivotable about the axis A1.

[0251] In particular, the outer frame portion 110 of the structured functional layer 100 according to Fig. 8, the respective lever sections 121 to 124 of the lever structure 120 hold, for example, indirectly via the adjustment range sections 181 to 184 of the adjustment structure 180 arranged therebetween, and the lever sections 121 to 124 of the lever structure 120 hold, for example, the spring sections 131 and 132 of the outer spring structure 130. The spring sections 131 and 132 of the outer spring structure 130 hold, for example, the inner frame section 140.

[0252] The inner frame section 140 of the structured functional layer 100 is, for example, connected on the inside on one side to the spring section 161 of the inner spring structure 160 of the structured functional layer 100 and on the opposite side with respect to the axis A2 to the spring section 162 of the inner spring structure 160.

[0253] The spring sections 161 and 162 of the inner spring structure 160 of the structured functional layer 100 are each connected, for example, to the mirror support section 170 of the structured functional layer 100, in particular, for example, on opposite sides of the mirror support section 170 in the direction of the axis A2.

[0254] The mirror support section 170 of the structured functional layer 100 is held, for example, via the spring sections 161 and 162 of the inner spring structure 160 on the inner frame section 140 of the structured functional layer 100, in particular, for example, pivotable about the axis A2.

[0255] In particular, the inner frame portion 140 holds, for example, the spring portions 161 and 162 of the inner spring structure 160. The spring portions 161 and 162 of the inner spring structure 160 hold, for example, the mirror support portion 170.

[0256] In embodiments according to Fig. 8, in particular an axis A1 (e.g. for an oscillation about the axis A1) and a further axis A2 (e.g. for an oscillation about the axis A2) are provided, e.g. for a 2D micromirror MEMS device, and the mirror support section 170 with the exemplary mirror 300 is held pivotably about these axes A1 and A2, respectively.

[0257] In particular, the frame section 110 of the structured functional layer 100 is preferably rigid, and the inner frame section 140 of the structured functional layer 100 is held pivotably about the axis A1 on the outer frame section 110 of the structured functional layer 100, for example, via the spring sections 131 and 132 of the outer spring structure 130, the lever sections 121 to 124 of the lever structure 120 (which may also be at least partially resilient, for example), and the adjustment range sections 181 to 184 of the adjustment structure 180.

[0258] On the lever sections 121 to 124 of the lever structure 120, respective activity sections 211 to 214 of an actuator and / or sensor structure 200 of the layered structure 10 are formed, for example. In preferred embodiments, these activity sections 211 to 214 of the actuator and / or sensor structure 200 can be designed as and / or comprise actuators and / or sensors or actuator and / or sensor layers.

[0259] For the mechanical stabilization of the vibration system around the axes A1 and A2, the exemplary layer structure 10 according to Fig. 8 is designed, for example, to be mirror-symmetrical with respect to the axis A1 and mirror-symmetrical with respect to the axis A2.

[0260] This means in particular that the exemplary layer structure 10 according to Fig. 8 in plan view, by way of example, has a double mirror- or axisymmetric symmetry (so-called quadrant symmetry), in particular in the sense that each quadrant of the exemplary layer structure 10 according to Fig. 8 is doubly mirror-symmetrical or axially symmetrical, namely particularly preferably in relation to its two adjacent quadrants in relation to reflection relative to the axis A1 (for example horizontal mirror symmetry in Fig. 8) and in relation to reflection relative to the axis A2 (example vertical mirror symmetry in Fig. 8).

[0261] Thus, with the double mirror-symmetric (or quadrant-symmetric) design with respect to the axes A1 and A2, the pivoting or oscillation behavior of the mirror support section 170 (optionally with the mirror 300 arranged thereon) about these two axes A1 and A2 can be advantageously structurally stabilized in embodiments.

[0262] This is to be distinguished in particular from 2D designs in the prior art, whose MEMS structure has a rotational symmetry or a point symmetry with respect to the center of the mirror or the central movable element of the MEMS structure, e.g. in which quadrants are not symmetrically related to each other by mirroring, but by 90° rotation around the center (see e.g. exemplary embodiments according to Fig. 13).

[0263] By applying, for example, an oscillating voltage to the preferably piezoelectric activity sections 211 and 212 of the actuator and / or sensor structure 200 and a preferably anti-phase oscillating voltage (phase shift, for example, substantially 180°) to the preferably piezoelectric activity sections 213 and 214 of the actuator and / or sensor structure 200, the lever sections 121 and 122 of the lever structure 120 on one side of the axis A1 each bend in an oscillating anti-phase manner inversely to the lever sections 123 and 124 of the lever structure 120 on the opposite side of the axis A1, in particular such that the lever sections 121 and 122 of the lever structure 120 on one side of the axis A1 bend upwards (with respect to a direction orthogonal to the plane of the drawing),when the lever sections 123 and 124 of the lever structure 120 on the opposite side of the axis A1 bend downwards (with respect to the direction orthogonal to the plane of the drawing), and the lever sections 121 and 122 of the lever structure 120 on one side of the axis A1 bend downwards (with respect to the direction orthogonal to the plane of the drawing), when the lever sections 123 and 124 of the lever structure 120 on the opposite side of the axis A1 bend upwards (with respect to the direction orthogonal to the plane of the drawing).

[0264] For example, an oscillating or swinging pivoting movement of the inner frame section 140 about the axis A1 can be driven by the actuator and / or sensor structure 200 via the spring structure 130.

[0265] For example, by applying an oscillating voltage to the preferably piezoelectric activity sections 211 and 213 of the actuator and / or sensor structure 200 and applying a preferably anti-phase oscillating voltage (phase shift, e.g., substantially 180°) to the preferably piezoelectric activity sections 212 and 214 of the actuator and / or sensor structure 200, the lever sections 121 and 123 of the lever structure 120 on one side of the axis A2 each bend in an oscillating anti-phase manner inversely to the lever sections 122 and 124 of the lever structure 120 on the opposite side of the axis A2, in particular such that the lever sections 121 and 123 of the lever structure 120 on one side of the axis A2 bend upwards (with respect to the direction orthogonal to the plane of the drawing),when the lever sections 122 and 124 of the lever structure 120 on the opposite side of the axis A2 bend downwards (with respect to the direction orthogonal to the plane of the drawing), and the lever sections 121 and 123 of the lever structure 120 on one side of the axis A2 bend downwards (with respect to the direction orthogonal to the plane of the drawing), when the lever sections 122 and 124 of the lever structure 120 on the opposite side of the axis A2 bend upwards (with respect to the direction orthogonal to the plane of the drawing).

[0266] Thus, via the spring structure 130, the inner frame section 140 and the inner spring structure 160, an oscillating or swinging pivoting movement of the mirror support section 170 about the axis A2 can be driven by the actuator and / or sensor structure 200. This also applies analogously to the other embodiments, in particular according to Fig. 10, Fig. 11 and Fig. 18.

[0267] For improved transmission of the external vibration to the inner axis A2, the inner frame section 140 is not completely rigid in preferred embodiments, but rather is slightly resilient or elastically deformable, in particular elastically bendable about the axis A2. This also applies analogously to the other embodiments, in particular according to Fig. 10, Fig. 11 and Fig. 18.

[0268] As already described above, an oscillation about the axis A1 can be driven, for example, by applying an in-phase alternating voltage to the activity sections 211 and 212 of the actuator and / or sensor structure 200 and an alternating voltage in antiphase thereto to the activity sections 213 and 214 of the actuator and / or sensor structure 200. In addition, an oscillation about the axis A2 can be driven, for example, by applying an in-phase alternating voltage to the activity sections 211 and 213 of the actuator and / or sensor structure 200 and an alternating voltage in antiphase thereto to the activity sections 212 and 214 of the actuator and / or sensor structure 200. This also applies analogously to the further exemplary embodiments, in particular according to Fig. 10, Fig. 11 and Fig. 18.

[0269] Both axes A1 and A2 can be driven simultaneously at the same or different frequencies by applying these two alternating voltages modulated one above the other (i.e., by applying an individual alternating voltage to each activity section 211 to 214, in which both alternating voltages for the axes A1 and A2 are applied modulated one above the other). This also applies analogously to the other embodiments, in particular according to Fig. 10, Fig. 11 and Fig. 18.

[0270] In particular, the oscillating or swinging pivoting movement of the mirror support element 170 or of the mirror 300 can preferably be excited essentially with the resonance frequency of the axis A1 (so-called resonant operation of the axis A1), excited essentially with the resonance frequency of the axis A2 (so-called resonant operation of the axis A2), or driven in both axes A1 and A2 with the respective resonance frequency of the respective axis A1 and A2. The other axis or both axes can also be designed for quasi-static operation in further embodiments, i.e., for operation well below the respective resonance frequency. This also applies analogously to the further embodiments, in particular according to Fig. 10, Fig. 11 and Fig. 18.

[0271] In embodiments according to Fig. 8, the holding, lever and spring structure 180 / 120 / 130 / 140 / 160 of the layered structure 10 with the actuator and / or sensor structure 200 formed on the lever structure 120 is thus preferably designed and configured, by way of example, to hold the mirror support element 170 in such a way that an oscillating pivoting or rotational movement about the corresponding axes A1 and A2 of the mirror support element 170 about the axes A1 and A2 (here, for example, exemplary torsion axes in each case) can be driven, in particular with independent, targeted control of the individual axes, e.g., for any 2D scanning movements of the mirror 300, preferably in particular in resonant or preferably bi-resonant operation, e.g., for any 2D Lissajous scanning movements. This also applies analogously to the further exemplary embodiments, in particular according to Fig. 10, Fig. 11 and Fig. 18.

[0272] Furthermore, the layer structure 10 can be Fig. 6 exemplary analogue Fig. 2 can be sealed from above with a translucent cover element 7 (e.g., a glass lid element) and from below with a base body element 8 (e.g., a base element), optionally preferably hermetically sealed under a vacuum atmosphere (e.g., vacuum encapsulation or vacuum-packed MEMS device). This also applies analogously to the other embodiments.

[0273] In further embodiments, differently shaped cover elements or 3D-shaped cover elements are also possible (e.g., round, dome-shaped, square, angled, planar, etc.). The material of such cover elements is preferably translucent, e.g., glass or other optically transparent materials (e.g., for wavelengths of approximately 400-2500 nm), such as borosilicate glass (e.g., Borofloat® BF33 from SCHOTT). This also applies analogously to the other embodiments.

[0274] Thus, a preferably vacuum-packed MEMS mirror device 20 (e.g., a MEMS mirror scanner, e.g., for 2D laser projection or 2D LIDAR applications) comprising the manufactured layer structure can be provided with piezoelectrically deflectable or controllable mirrors (in particular for any 2D scanning movements of the mirror 300, preferably in particular in resonant or preferably bi-resonant operation, e.g., for any 2D Lissajous scanning movements).

[0275] However, due to process tolerances in the manufacturing process of the layered structure, the respective resonance frequencies of the respective MEMS devices can fluctuate within the range of the process tolerances. Furthermore, process tolerances can lead to symmetry errors within the range of the process tolerances, which influence the vibration behavior during resonant operation. Furthermore, cross-coupling of the vibration around the two axes can occur during operation of the MEMS device. Furthermore, thermal influences can occur during operation of the MEMS device.

[0276] To compensate for such possible influences, the adjustment range sections 181 to 184 of the adjustment structure 180 of the functional layer 100 provide, for example, an adjustment and / or readjustment function which allows the resonance frequencies and / or the ratio of the resonance frequencies of the MEMS structure to be readjusted and / or adjusted during operation or to compensate for any symmetry errors and / or thermal influences and / or to compensate for cross-coupling of the oscillations about the two axes by readjusting and / or adjusting the spatial position of the lever structure 120, for example by translational and / or rotational displacement.

[0277] Examples include Fig. 8 adjustment range sections 181 to 184 are formed in the functional layer 100, which are exemplary analogous to Fig. 4A and in further embodiments also analogous Fig. 6 and Fig. 7 can be provided.

[0278] This enables analog Fig. 4C and Fig. 4D, the resonant frequency of the MEMS structure can be adjusted or readjusted during operation by adjusting the lever sections 121 to 124 of the lever structure 120 relative to the frame structure 110, for example, transversely to the axial direction of axis A1 or in the direction of axis A2. Thus, by adjusting all lever sections 121 to 124 in the same way, the resonant frequencies of the oscillation of the support section 170 about the axes A1 and A2 and / or the ratio of the resonant frequencies of the oscillation of the support section 170 about the axes A1 and A2 can be adjusted or tuned during operation.

[0279] It should be noted that this is not limited to the fact that a translational displacement or actuating movement can be driven in the X / Y plane, but that in further exemplary embodiments, a translational and / or rotational displacement or actuating movement can be generated in the respective actuating range, which preferably includes at least one component parallel to the plane of the frame or the X / Y plane. It should also be noted that this is not limited to the actuating actuators 601 to 604 being designed as capacitors. In particular, the actuating actuators 601 to 604 can be designed as magnetic, piezoelectric, electrical, electromagnetic, and / or electrostatic microactuators.

[0280] The inventors have discovered that a displacement or adjusting movement of the lever sections 121 to 124 of the lever structure 120 in the direction parallel to the XY plane of the two axes A1 and A2 (or at least with a component in the direction parallel to the XY plane of the two axes A1 and A2) can influence or adjust the resonance frequencies of the axes, wherein the resonance frequencies can also be shifted differently, so that a readjustment or adjustment of the ratio of the resonance frequencies can also be made possible.

[0281] In particular, the inventors discovered that the resonance frequencies of the MEMS structure can be actively reduced and / or increased during operation in a range essentially from approximately 1 to 5%, in particular even up to ±10%, wherein the ratio of the resonance frequencies of the MEMS structure can also be actively reduced and / or increased during operation in a range essentially from approximately 1 to 5%, in particular even up to ±10%. This enables the compensation of any process tolerances and also enables application-optimized tuning of the oscillations during resonant operation. Furthermore, by individually adjusting the respective lever sections 122 to 124, any process-related symmetry errors during operation can be compensated and / or cross-coupling of the oscillation about both axes A1 and A2 can be compensated.Furthermore, any thermal influences during operation can be compensated for by dynamically adjusting the respective lever sections 121 to 124.

[0282] The actuating movement can be adjusted statically, e.g., with a displacement held statically during operation, or quasi-statically. Quasi-static dynamic adjustment or adjustment here means that the actuating movement of one or more actuating ranges can be dynamically adjusted during operation of the MEMS device, e.g., for dynamic compensation of time-dependent thermal influences, whereby the change in the displacement position is slow compared to the excited resonant frequency during resonant operation (e.g., with a frequency of essentially 1 / 10 of the excited resonant frequency or less, or with a rate of change of essentially 1 / 10 of the rate of change of the excited oscillation amplitude or less).

[0283] Fig. 9 shows an exemplary functional schematic representation of a layer structure for a MEMS device according to Fig. 8 (analogous to Fig. 5).

[0284] Fig. 9 shows, by way of example, the preferably rigid outer frame structure (e.g., outer frame section 110), which is preferably closed on all sides, and the centrally held movable element (e.g., the support section or mirror support section 170). The centrally held movable element is held so as to be swingable in two axes A1 and A2, for example, via the adjustment range sections 181 to 184 of the adjustment structure 180, the lever sections 121 to 124 of the lever structure 120, the spring sections 131 and 132 of the outer spring structure 130, the inner frame section 140, and the spring sections 161 and 162 of the inner spring structure 160.

[0285] The respective sections 211 to 214 of the actuator and / or sensor structure 200 are each assigned to one of the lever sections 121 to 124 of the lever structure 120 and are schematically functionally represented as capacities in Fig. 9 (analog Fig. 5). Fig. 9 also shows, by way of example, the lever sections 121 to 124 of the lever structure 120, functionally schematically represented as spring symbols (analogous Fig. 5).

[0286] Furthermore, Fig. 9, the inner frame section 140 is also functionally schematically illustrated as a spring symbol, since, however, in some embodiments it can also bend at least partially elastically during operation (e.g., oscillating bending when driving the oscillation in an oscillating manner by applying a correspondingly oscillating voltage to the sections 212 to 224 of the actuator and / or sensor structure 200). Thus, for example, a springy effect can also be exerted functionally on the inner frame section 140 (preferably with a higher spring stiffness compared to the preferably softer spring sections of the spring structures 130 and / or 160). In embodiments, this can also be referred to as a near-gimbal configuration (since the inner frame section 140 is not rigid or not completely rigid).

[0287] This results in the advantage that the lever sections 121 to 124 of the lever structure 120 already experience a deflection during operation at the connection points to the respective spring sections 131 and 132 of the spring structure 130, which is passed on to the spring sections 131 and 132 of the spring structure 130 and is further amplified at the spring sections 131 and 132 by their own spring movement. A further advantage results in that the inner frame section 140 already experiences a deflection during operation due to its own bending, which is passed on to the spring sections 161 and 162 of the inner spring structure 160 and is further amplified at the spring sections 161 and 162 by their own spring movement.

[0288] This advantageously provides the possibility of achieving higher deflection amplitudes of the carrier section 170 in two axes A1 and A2 with the same power consumption, or of achieving consistent deflection amplitudes in two axes A1 and A2 even with lower power consumption, particularly compared to conventional MEMS designs with actuators arranged on or at the frame structure and / or on the springs. In the case of consistent deflection amplitudes of the carrier section 170, even with lower power consumption, they experience less deformation, so that the spring sections of the outer and inner spring structures 130 / 160 are better protected against stress and / or experience less wear with a lower risk of breakage or have a longer service life.

[0289] Examples are the respective lever sections 121 to 124 in Fig. 9 are not anchored rigidly on the outside directly to the rigid frame structure 110, but rather via the respective adjustment range sections 181 to 184. The adjustment range sections 181 to 184 are shown here as spring sections in the X direction, for example, in order to schematically illustrate the deformation potential in the X direction. In the Y direction, the adjustment range sections 181 to 184 are shown as rigid, functionally schematic, examples. The actuators 601 to 604 are shown here as capacitors, for example.

[0290] An example is Fig. 9 shows an exemplary basic concept in which an inner holding and spring structure (here, for example, the lever structure 120 and the spring structures 130 and 160) holds the movable element 170, and a 2D oscillation of the movable element 170 relative to the outer frame structure 110 can be driven with respect to the axes A1 and A2 via actuators provided on the inner holding and spring structure (here, for example, the actuators 211 to 214). In contrast to generic MEMS structures, however, the inner holding and spring structure is not directly rigidly anchored to the outer frame structure on the outside, but rather comprises additional adjustment areas in the anchoring region, which enable a displacement or adjustment movement of the anchoring of the inner holding and spring structure relative to the frame structure 110, in particular parallel to the plane of the frame structure 110 (here, for example, parallel to the X / Y plane or, for example, in the X direction).

[0291] It should be noted that this is not limited to the fact that a translational displacement or adjusting movement can be driven in the X / Y plane, but that in further embodiments a translational and / or rotational displacement or adjusting movement can be generated in the respective adjusting range, which comprises at least one component parallel to the plane of the frame or the X / Y plane.

[0292] It should also be noted that this is not limited to the actuators 601 to 604 being designed as capacitors. In particular, the actuators 601 to 604 can be designed as magnetic, piezoelectric, electrical, electromagnetic, and / or electrostatic microactuators.

[0293] Fig. 10 shows an exemplary schematic top view of a layer structure 10 for a MEMS device 20 according to some further embodiments.

[0294] In some embodiments according to Fig. 10, the frame section 100 of the functional layer 100, the adjustment range sections 181 to 184 of the adjustment structure 180 of the functional layer 100, the lever sections 121 to 124 of the lever structure 120 of the functional layer 100 and the activity sections 211 to 214 of the actuator and / or sensor structure 200 are exemplary analogous to Fig. 3 trained.

[0295] In addition, respective actuating actuators 601 to 604 are formed on the actuating area sections 181 to 184 of the actuating structure 180 of the functional layer 100, which are arranged in Fig. 10 exemplary analogue Fig. 3 or Fig. 4A (and in further embodiments also analogous Fig. 6 and Fig. 7 may be trained).

[0296] In contrast to the above embodiments, the adjustment range sections 181 to 184 of the adjustment structure 180 are in Fig. 10 arranged obliquely to the axes A1 and A2 (in particular, by way of example, essentially 45° relative to the respective axis A1 or A2).

[0297] This enables analog Fig. 4C and Fig. 4D, the resonant frequency of the MEMS structure can be adjusted or readjusted during operation by adjusting the lever sections 121 to 124 of the lever structure 120 relative to the frame structure 110, for example, obliquely to the axial direction of the axes A1 and A2. Thus, by adjusting all lever sections 121 to 124 in the same manner, the resonant frequencies of the oscillation of the support section 170 about the axes A1 and A2 and / or the ratio of the resonant frequencies of the oscillation of the support section 170 about the axes A1 and A2 can be adjusted or tuned during operation.

[0298] The inventors have discovered that a displacement or adjusting movement of the lever sections 121 to 124 of the lever structure 120 in the direction parallel to the XY plane of the two axes A1 and A2 (or at least with a component in the direction parallel to the XY plane of the two axes A1 and A2) influences or adjusts the resonance frequencies of both axes, whereby the resonance frequencies are, however, shifted differently, so that a readjustment or adjustment of the ratio of the resonance frequencies is also possible.

[0299] In particular, the inventors discovered that the resonance frequencies of the MEMS structure can be actively reduced and / or increased during operation in a range essentially from approximately 1 to 5%, in particular even up to ±10%, wherein the ratio of the resonance frequencies of the MEMS structure can also be actively reduced and / or increased during operation in a range essentially from approximately 1 to 5%, in particular even up to ±10%. This enables the compensation of any process tolerances and also enables application-optimized tuning of the oscillations during resonant operation. Furthermore, by individually adjusting the respective lever sections 122 to 124, any process-related symmetry errors during operation can be compensated and / or cross-coupling of the oscillation about both axes A1 and A2 can be compensated.Furthermore, any thermal influences during operation can be compensated for by dynamically adjusting the respective lever sections 121 to 124.

[0300] The actuating movement can be adjusted statically, e.g., with a displacement held statically during operation, or quasi-statically. Quasi-static dynamic adjustment or adjustment here means that the actuating movement of one or more actuating ranges can be dynamically adjusted during operation of the MEMS device, e.g., for dynamic compensation of time-dependent thermal influences, whereby the change in the displacement position is slow compared to the excited resonant frequency during resonant operation (e.g., with a frequency of essentially 1 / 10 of the excited resonant frequency or less, or with a rate of change of essentially 1 / 10 of the rate of change of the excited oscillation amplitude or less).

[0301] It should be noted that this is not limited to the fact that a translational displacement or actuating movement can be driven in the X / Y plane, but that in further exemplary embodiments, a translational and / or rotational displacement or actuating movement can be generated in the respective actuating range, which includes at least one component parallel to the plane of the frame or the X / Y plane. It should also be noted that this is not limited to the actuating actuators 601 to 604 being designed as capacitors. In particular, the actuating actuators 601 to 604 can be designed as magnetic, piezoelectric, electrical, electromagnetic, and / or electrostatic microactuators.

[0302] Fig. 11 shows an exemplary schematic top view of a layer structure 10 for a MEMS device 20 according to some further embodiments.

[0303] In some embodiments according to Fig. 11, the frame section 100 of the functional layer 100, the adjustment range sections 181 to 184 of the adjustment structure 180 of the functional layer 100, the lever sections 121 to 124 of the lever structure 120 of the functional layer 100 and the activity sections 211 to 214 of the actuator and / or sensor structure 200 are exemplary analogous to Fig. 3 trained.

[0304] In addition, respective actuating actuators 610 to 604 are formed on the actuating area sections 181 to 184 of the actuating structure 180 of the functional layer 100, for example, which Fig. 11 exemplary analogue Fig. 3 or Fig. 4A (and in further embodiments also analogous Fig. 6 and Fig. 7 may be trained).

[0305] In contrast to the above embodiments, the adjustment range sections 181 to 184 of the adjustment structure 180 are in Fig. 10 arranged, for example, in the Y direction or in the direction of the axis A1 and transverse to the axis A2 (for example parallel to the adjacent frame structure 110).

[0306] This enables analog Fig. 4C and Fig. 4D, the resonant frequency of the MEMS structure can be adjusted or readjusted during operation by adjusting the lever sections 121 to 124 of the lever structure 120 relative to the frame structure 110, for example in the direction of axis A1 and transverse to axis A2. Thus, by adjusting all lever sections 121 to 124 in the same way, the resonant frequencies of the oscillation of the support section 170 about the axes A1 and A2 and / or the ratio of the resonant frequencies of the oscillation of the support section 170 about the axes A1 and A2 can be adjusted or tuned during operation.

[0307] The inventors have discovered that a displacement or adjusting movement of the lever sections 121 to 124 of the lever structure 120 in a direction parallel to the XY plane of the two axes A1 and A2 (or preferably at least with a component in a direction parallel to the XY plane of the two axes A1 and A2) can influence or adjust the resonance frequencies of the axes, wherein the resonance frequencies can also be shifted differently, so that a readjustment or adjustment of the ratio of the resonance frequencies can also be made possible.

[0308] In particular, the inventors discovered that the resonance frequencies of the MEMS structure can be actively reduced and / or increased during operation in a range essentially from approximately 1 to 5%, in particular even up to ±10%, wherein the ratio of the resonance frequencies of the MEMS structure can also be actively reduced and / or increased during operation in a range essentially from approximately 1 to 5%, in particular even up to ±10%. This enables the compensation of any process tolerances and also enables application-optimized tuning of the oscillations during resonant operation. Furthermore, by individually adjusting the respective lever sections 122 to 124, any process-related symmetry errors during operation can be compensated and / or cross-coupling of the oscillation about both axes A1 and A2 can be compensated.Furthermore, any thermal influences during operation can be compensated for by dynamically adjusting the respective lever sections 121 to 124.

[0309] The actuating movement can be adjusted statically, e.g., with a displacement held statically during operation, or quasi-statically. Quasi-static dynamic adjustment or adjustment here means that the actuating movement of one or more actuating ranges can be dynamically adjusted during operation of the MEMS device, e.g., for dynamic compensation of time-dependent thermal influences, whereby the change in the displacement position is slow compared to the excited resonant frequency during resonant operation (e.g., with a frequency of essentially 1 / 10 of the excited resonant frequency or less, or with a rate of change of essentially 1 / 10 of the rate of change of the excited oscillation amplitude or less).

[0310] It should be noted that this is not limited to the fact that a translational displacement or actuating movement can be driven in the X / Y plane, but that in further exemplary embodiments, a translational and / or rotational displacement or actuating movement can be generated in the respective actuating range, which includes at least one component parallel to the plane of the frame or the X / Y plane. It should also be noted that this is not limited to the actuating actuators 601 to 604 being designed as capacitors. In particular, the actuating actuators 601 to 604 can be designed as magnetic, piezoelectric, electrical, electromagnetic, and / or electrostatic microactuators.

[0311] Fig. 12 shows an exemplary functional schematic representation of a layer structure for a MEMS device according to Fig. 11 (analogous to Fig. 9), wherein, for example, rigid anchoring of the adjustment range sections 181 to 184 of the adjustment structure 180 with orientation in the Y direction, rigid holding sections 111 to 114 of the frame structure 110 are provided, which extend, for example, inwards in the X direction relative to the frame structure 111.

[0312] Fig. 13 shows an exemplary schematic top view of a layer structure 10 for a MEMS device 20 according to some further embodiments.

[0313] In contrast to embodiments according to Fig. 3 to 12, the functional layer 100 comprises four spring sections 135 to 138 of the spring structure 130, wherein each of the spring sections 135 to 138 is connected to the support section 170.

[0314] The spring sections 135 and 137 are arranged opposite one another in the direction of the axis A1, analogous to the spring sections 131 and 132 in the preceding embodiments, and the spring sections 136 and 138 are arranged opposite one another in the direction of the axis A2, analogous to the spring sections 161 and 162 in the preceding embodiments. However, all four spring sections 135 to 138 are directly connected to the movable element (support section 170).

[0315] For example, each spring section 135 to 138 of the spring structure 130 is connected to a respective lever section 125 to 128 of the lever structure 120 at the end facing away from the support section 170. Such a point-symmetric arrangement of the MEMS structure also allows a two-dimensional oscillation of the inner support section 170 about the axes A1 and A2 by correspondingly controlling the activity sections 215 to 218 of the actuator and / or sensor structure 200.

[0316] The anchoring of the lever sections 125 to 128 to the frame structure 120 of the frame section 110 via the adjustment range sections 185 to 188 of the adjustment structure 180 is in each case exemplary analogous Fig. 3 or 8, but point-symmetric.

[0317] In addition, openings 505 to 508 (analogous to openings 501 to 504) are formed on the adjustment area sections 185 to 188 of the adjustment structure 180 of the functional layer 100, and respective adjustment actuators 605 to 608 are arranged, which in Fig. 13 exemplary analogue Fig. 3 or Fig. 4A (and in further embodiments also analogous Fig. 6 and Fig. 7). Consequently, the actuators 605 to 608 can be configured analogously Fig. 4C and Fig. 4D spatial displacements or adjusting movements of the lever sections 125 to 128 on the frame structure 120.

[0318] This leads via the actuator 605 to a spatial displacement or actuating movement of the lever section 125 in the direction towards or away from the axis A1 (e.g. in the direction of the axis A2 or in the X-direction in Fig. 13). Analogous actuating movements of the other lever sections 126 to 128 of the lever structure 120 can be carried out via the actuating actuators 606 to 608.

[0319] This enables the adjustment or readjustment of the resonance frequencies of the MEMS structure during operation through adjustable adjustment movements of the lever sections 125 to 128 of the lever structure 120, for example, transversely to the axial direction of one of the axes A1 and A2 or in the direction of the other axis A2 or A1. Thus, by adjusting all lever sections 125 to 128 in the same way, the resonance frequencies of the oscillation of the support section 170 about the axes A1 and A2 and / or the ratio of the resonance frequencies of the oscillation of the support section 170 about the axes A1 and A2 can be adjusted or tuned during operation.

[0320] In particular, it was found that the resonance frequencies of the MEMS structure can be actively reduced and / or increased during operation in a range essentially from approximately 1 to 5%, in particular even up to ±10%, whereby the ratio of the resonance frequencies of the MEMS structure can also be actively reduced and / or increased during operation in a range essentially from approximately 1 to 5%, in particular even up to ±10%. This enables the compensation of any process tolerances and also enables application-optimized tuning of the oscillations during resonant operation. Furthermore, any process-related symmetry errors during operation can be compensated for by individually adjusting the respective lever sections 125 to 128. Furthermore, thermal influences during operation can be compensated for by dynamically adjusting the respective lever sections 125 to 128.

[0321] Fig. 14 shows an exemplary functional schematic representation of a layer structure for a MEMS device according to Fig. 13 (analogous to Fig. 9 and Fig. 12).

[0322] Fig. 15 shows an exemplary, schematic top view of a detailed view of an adjustment region 183 of the layer structure 10 for a MEMS device 20 according to some further embodiments.

[0323] The adjustment range 183 of the layer structure 10 for a MEMS device 20 is exemplary analogous Fig. 4C, wherein, for example, two actuators 603-1 and 603-2 are arranged next to each other in the longitudinal direction of the opening 503. Here, for example, analogous to Fig. 4D capacitors are shown as actuators, whereby other magnetic, electrical, electromagnetic, electrostatic and / or piezoelectric actuators (e.g. according to Fig. 6 and Fig. 7) can be provided.

[0324] By setting the actuators 603-1 and 603-2 in the same way, analogous to Fig. 4C and Fig. 4D translational displacements are generated transversely to the connected frame section 110. Furthermore, this enables a rotational angular displacement of the respective holding or lever sections via a torque if the respective actuating actuators 603-1 and 603-2 of the respective actuating range section of the actuating structure 180 are controlled unequally.

[0325] Consequently, the exemplary adjustment range 183 of the layer structure 10 according to Fig. 15 is configured, for example, to generate a translational and / or a rotational displacement. Such an exemplary adjustment range 183 of the layer structure 10 according to Fig. 15 can be used in further embodiments according to Fig. 3, Fig. 8, Fig. 10, Fig. 11 and Fig. 13 can be used.

[0326] Fig. 16 shows an exemplary, schematic top view of a detailed view of an adjustment region 183 of the layer structure 10 for a MEMS device 30 according to some further embodiments.

[0327] By way of example, the adjustment range section 183 of the adjustment structure 180 of the functional layer 100 in Fig. 16 longitudinal openings 503' extending transversely to the connected frame section 110 (or spiral springs formed around the longitudinal openings 503'). This enables, for example, a rotational displacement or adjustment movement relative to the frame section 110 (analog Fig. 19C and Fig. 19D below) by appropriately controlling the exemplary externally arranged actuators 603-1 and 603-2.

[0328] Consequently, the exemplary adjustment range 183 of the layer structure 10 according to Fig. 16 is configured, for example, to generate a rotational displacement. Such an exemplary adjustment range 183 of the layer structure 10 according to Fig. 16 can be used in further embodiments according to Fig. 3, Fig. 8, Fig. 10, Fig. 11 and Fig. 13 can be used.

[0329] Fig. 17 shows an exemplary, schematic top view of a detailed view of an adjustment region 183 of the layer structure 10 for a MEMS device 20 according to some further embodiments.

[0330] By way of example, the adjustment range section 183 of the adjustment structure 180 of the functional layer 100 in Fig. 17 a combination of the setting range sections according to Fig. 4A and Fig. 16. This allows, for example, a rotational displacement or adjustment movement relative to the frame section 110 (analog Fig. 19C and Fig. 19D below) by correspondingly controlling the exemplary externally arranged actuators 603-1 and 603-2 as well as a translational displacement or actuating movement relative to the frame section 110 (analog Fig. 4C and Fig. 4D) by controlling the actuator 603 accordingly.

[0331] Consequently, the exemplary adjustment range 183 of the layer structure 10 according to Fig. 17 is configured, for example, to generate a translational and / or a rotational displacement. Such an exemplary adjustment range 183 of the layer structure 10 according to Fig. 17 can be used in further embodiments according to Fig. 3, Fig. 8, Fig. 10, Fig. 11 and Fig. 13 can be used.

[0332] Fig. 18 shows an exemplary schematic top view of a layer structure 10 for a MEMS device 20 according to some further embodiments. Fig. 19A to 19D show the exemplary, schematic top view of a detailed view of an adjustment area 183 according to Fig. 18 for the respective illustration of exemplary displacements (e.g. translational according to Fig. 19A and Fig. 19B and / or rotationally according to Fig. 19C and Fig. 19D).

[0333] Consequently, the exemplary adjustment range 183 of the layer structure 10 according to Fig. 18 is configured, for example, to generate a translational and / or a rotational displacement. Such an exemplary adjustment range 183 of the layer structure 10 according to Fig. 9A to 9B can be used in further embodiments according to Fig. 3, Fig. 8, Fig. 10, Fig. 11 and Fig. 13 can be used.

[0334] Fig. 20 shows an exemplary, schematic top view of a detailed view of an adjustment region 183 of the layer structure 10 for a MEMS device 20 according to some further embodiments.

[0335] Analogous to Fig. 19A to 19D is the exemplary adjustment range 183 of the layer structure 10 according to Fig. 20 is configured, for example, to generate a translational and / or a rotational displacement.

[0336] However, comb drives are provided as actuators 603-1 and 603-2. For example, the setting range 183 includes analog Fig. 4A, Fig. 6 and Fig. 7, a longitudinal opening 503 in the functional layer 100, which extends transversely to the connected frame section 110, for example, to form a deformable adjustment area of ​​the adjustment area section 183 in the functional layer 100.

[0337] The actuating actuators 603-1 and 603-2 are designed, for example, as comb drives, wherein several movable electrodes of the comb drives are arranged in the region of the connection of the lever section 123 to the actuating section 183, and corresponding static electrodes of the comb drives are arranged on the outside on rigid holding sections 113a and 113b of the frame structure 110.

[0338] Consequently, the exemplary adjustment range 183 of the layer structure 10 according to Fig. 20 is configured, for example, to generate a translational and / or a rotational displacement. Such an exemplary adjustment range 183 of the layer structure 10 according to Fig. 20 can be used in further embodiments according to Fig. 3, Fig. 8, Fig. 10, Fig. 11, Fig. 13 and Fig. 18 can be used.

[0339] Embodiments have been described above which, starting from the prior art, each provide layer structures for a MEMS device with an improved layer structure design, in particular with regard to the design of the mechanically active functional layer and / or the arrangement of the actuators, e.g. the piezoelectric drive and / or sensor surfaces on the mechanically active functional layer, in order to improve, starting from the known layer structures, in particular the operating properties of the MEMS device comprising the layer structure.

[0340] In particular, the above embodiments and their exemplary aspects advantageously make it possible to provide an improved layer structure for a MEMS device with an improved layer structure design, in particular with regard to the design of the mechanically active functional layer and / or the arrangement of the actuators, e.g. the piezoelectric drive and / or sensor surfaces on the mechanically active functional layer, in order to improve the operating properties of the MEMS device, particularly preferably with regard to one or more of the following aspects: Improvement of the operating properties during operation, in particular during resonant operation and / or during non-resonant operation;Improving the operating characteristics with regard to manufacturing-related process tolerances, particularly preferably by providing options or functions for static, quasi-static and / or dynamic compensation of any process tolerances, particularly in resonant operation and / or non-resonant operation; Improving the operating characteristics with regard to manufacturing-related symmetry errors, particularly preferably by providing options or functions for static, quasi-static and / or dynamic compensation of any process tolerance-related symmetry errors, particularly in resonant operation and / or non-resonant operation; Providing an adjustment and / or readjustment function for static, quasi-static and / or dynamic compensation of thermal influences during operation, particularly in resonant operation and / or non-resonant operation;Providing an adjustment and / or readjustment function for static, quasi-static and / or dynamic adjustment and / or setting of the resonance frequency(ies), in particular during resonant operation and / or non-resonant operation; Providing an adjustment and / or readjustment function for static, quasi-static and / or dynamic adjustment and / or setting of the resonance frequency ratios in multi-axis MEMS devices, in particular during resonant operation and / or non-resonant operation; Providing a tuning range for a resonance frequency of the MEMS structure, in particular during resonant operation and / or non-resonant operation; Providing a tuning range for the resonance frequencies of the MEMS structure or the resonance frequency ratios in multi-axis MEMS devices, in particular during resonant operation and / or non-resonant operation;Avoiding or compensating for cross-coupling of the vibrations of the axes in multi-axis MEMS devices, particularly during resonant operation and / or non-resonant operation; and / or providing an adjustment and / or readjustment function for the static, quasi-static and / or dynamic influencing of higher and lower order mode structures and / or for the static, quasi-static and / or dynamic influencing of one or more vibration modes or eigenmodes of the MEMS structure absolutely and / or relative to one another (in particular for the static, quasi-static and / or dynamic adjustment and / or readjustment of the eigenforms and / or eigenfrequencies of the vibration modes of the MEMS structure absolutely and / or relative to one another), particularly during resonant operation of one or more vibration modes, and / or during non-resonant operation.

[0341] In the above embodiments, various drive / sense mechanisms can be used and possibly combined, e.g. piezoelectric, electrostatic, magnetic, electromagnetic, and / or thermal.

[0342] Embodiments of layered structures with layers have been described above. It should be noted that such embodiments should not be construed as limiting the possibility of no further intermediate layers being present in further embodiments. On the contrary, further layers and / or intermediate layers may be provided in further embodiments and / or described layers may be omitted.

[0343] It should be noted that only examples or exemplary embodiments of the present disclosure, as well as technical advantages, have been described above in detail with reference to the accompanying figures. However, the present disclosure is in no way limited or restricted to the exemplary embodiments described above and their design features or the described combinations thereof, but further encompasses modifications of the exemplary embodiments, in particular those encompassed by modifications of the features of the described examples or by combinations or partial combinations of individual or several of the features of the described examples within the scope of the independent claims. List of reference symbols 10 Layer structure 20 MEMS device 100 Device Layer 110 frame section / outer frame section 111-114 stopping sections 120 lever structure (optional) 121-124 lever sections 125-128 lever sections 130 Spring structure / outer spring structure 131-132 spring sections 135-138 spring sections 140 inner frame section (optional) 160 inner spring structure (optional) 161-162 spring sections 170 support section / mirror support section 180 Positioning structure 181-184 parking area sections 185-188 parking area sections 200 Actuator and / or sensor structure 211-214 Activity sections (actuator and / or sensor sections) 215-218 Activity sections (actuator and / or sensor sections) 300 mirrors 400 contacts 401 to 418 conductor tracks 501 openings in the functional layer 502 openings in the functional layer 503 openings in the functional layer 504 openings in the functional layer 601 actuator 602 actuator 603 Actuator 603 Actuator

Claims

[1] MEMS device, in particular a vacuum-packed MEMS mirror device, comprising: - a frame structure (110), - a movable element (170), - a holding and spring structure (120, 130; 120, 130, 140, 160) which is connected to the frame structure (110) and holds the movable element (170) movable with respect to at least one axis (A1; A2) relative to the frame structure (110), in particular pivotable about the at least one axis (A1), wherein the holding and spring structure (120, 130; 120, 130, 140, 160) comprises at least one actuating area section (181) with at least one actuating actuator (601), and wherein the at least one actuating actuator (601) of the at least one actuating area section (181) is configured to generate a force in a first direction and to generate a displacement, in particular an actuating movement, of at least a part of the holding and spring structure (120, 130; 120, 130, 140, 160) relative to the frame structure (110), wherein the at least one adjustment region section (181) of the holding and spring structure has an adjustment region (501) deformable in the first direction, which comprises one or more elongated and / or strip-shaped openings extending in the longitudinal direction transverse to the first direction. [2] MEMS device according to claim 1, characterized byin that the at least one actuating actuator (601) of the at least one actuating range section (181) is configured to generate a translatory and / or rotational displacement, in particular an actuating movement, of at least part of the holding and spring structure (120, 130; 120, 130, 140, 160) relative to the frame structure (110). [3] MEMS device according to claim 1 or 2, characterized by that the at least one actuating actuator (601) of the at least one actuating range section (181) is designed to generate the displacement, in particular actuating movement, of at least part of the holding and spring structure (120, 130; 120, 130, 140, 160) relative to the frame structure (110) in a direction parallel to a plane of the frame structure (110); and / or the at least one actuating actuator (601) of the at least one actuating area section (181) is configured to generate the displacement, in particular actuating movement, of at least part of the holding and spring structure (120, 130; 120, 130, 140, 160) relative to the frame structure (110) with at least one component in a direction parallel to a plane of the frame structure (110) and / or with at least one component in a direction transverse, in particular perpendicular, to the plane of the frame structure (110). [4] MEMS device according to at least one of the preceding claims, characterized by , that the at least one actuating actuator (601) of the at least one actuating range section (181) is configured to generate the displacement, in particular actuating movement, of at least part of the holding and spring structure (120, 130; 120, 130, 140, 160) relative to the frame structure (110) statically, quasi-statically and / or dynamically in resonant operation and / or in at least partially non-resonant operation of the MEMS device, in which at least one axis of the MEMS device is operated non-resonantly, in particular: for the static, quasi-static and / or dynamic compensation of manufacturing-related process tolerances, in particular in resonant operation and / or in at least partially non-resonant operation; for the static, quasi-static and / or dynamic compensation of thermal influences, in particular in resonant operation and / or in at least partially non-resonant operation; for the static, quasi-static and / or dynamic compensation of a process tolerance-related symmetry error of the holding and / or spring structure, in particular in resonant operation and / or in at least partially non-resonant operation; for statically, quasi-statically and / or dynamically adjusting and / or setting a resonance frequency of the movement of the movable element (170) with respect to the at least one axis (A1; A2) relative to the frame structure (110), in particular in resonant operation and / or in at least partially non-resonant operation; for tuning the resonant frequency of the movement of the movable element (170) with respect to the at least one axis (A1; A2) relative to the frame structure (110), in particular in resonant operation and / or in at least partially non-resonant operation; and / or for the static, quasi-static and / or dynamic adjustment and / or setting of respective eigenforms and / or respective eigenfrequencies of one or more oscillation modes of an oscillation of the movable element (170) with respect to the at least one axis (A1; A2) relative to the frame structure (110), in particular in resonant operation and / or in at least partially non-resonant operation. [5] MEMS device according to at least one of the preceding claims, characterized by , that the first direction extends parallel to a plane of the frame structure (110) and / or with at least one component in a direction parallel to the plane of the frame structure (110), wherein the at least one actuating actuator (601) is configured to generate the force in the first direction for stretching and / or compressing the actuating region (501) in the first direction. [6] MEMS device according to at least one of the preceding claims, characterized bythat the deformable adjustment region (501) is designed to be stiffer in a second direction transverse to the first direction than in the first direction, wherein the second direction extends in particular with at least one component in a direction parallel to a plane of the frame structure (110). [7] MEMS device according to at least one of the preceding claims, characterized by that the one or more elongated and / or strip-shaped openings of the adjustment region (501) are formed in a functional layer (100) of a layer structure (10) of the MEMS device (20). [8] MEMS device according to at least one of the preceding claims, characterized byin that the at least one actuating actuator (601) of the at least one actuating range section (181) is designed to generate a translatory and / or rotational displacement, in particular an actuating movement, of at least part of the holding and spring structure (120, 130; 120, 130, 140, 160) relative to the frame structure (110) in a direction oblique, transverse or parallel to the at least one axis (A1; A2). [9] MEMS device according to at least one of the preceding claims, characterized by that the at least one adjustment range section (181) is connected to the frame structure (110) and / or is connected on a side facing away from the frame structure (110) directly or indirectly, in particular via a lever section (121), to a spring section (131; 132) of the holding and spring structure. [10] MEMS device according to claim 9, characterized byin that the at least one actuating actuator (601) of the at least one actuating range section (181) is designed to generate a translatory and / or rotational displacement, in particular an actuating movement, of the at least one actuating range section (181) on the side facing away from the frame structure (110), in particular obliquely, transversely or parallel to the frame structure (110) and / or with at least one component in a direction parallel to a plane of the frame structure (110). [11] MEMS device according to at least one of the preceding claims, characterized by an actuator and / or sensor structure (200) for driving and / or detecting an oscillation of the movable element (170; 140, 170) with respect to the at least one axis (A1; A1, A2) relative to the frame structure (110), in particular in at least partially non-resonant operation and / or in resonant operation, wherein at least a part of the actuator and / or sensor structure (200) is arranged in the region of the displaceable part of the holding and spring structure. [12] MEMS device according to at least one of the preceding claims, characterized by , that the holding and spring structure comprises a lever structure (120) with at least one lever section (121) and a spring structure (130) with at least one spring section (131), wherein the at least one lever section (121) of the lever structure (120) is connected at one end to the at least one spring section (131; 161) of the spring structure (130; 160) and / or is connected at an end facing away from the at least one spring section (131; 161) to the at least one adjustment range section (181). [13] MEMS device according to claim 12, characterized byin that the at least one actuating actuator (601) of the at least one actuating range section (181) is configured to generate a translatory and / or rotational displacement, in particular an actuating movement, of the at least one lever section (121) of the lever structure (120) via a deformation of a deformable actuating range (501) of the at least one actuating range section (181). [14] MEMS device according to claim 12 or 13 in conjunction with claim 11, characterized by that at least one activity section (211) of the actuator and / or sensor structure (200) for driving and / or detecting an oscillation of the movable element (170; 140, 170) with respect to the at least one axis (A1; A1, A2) relative to the frame structure (110) is arranged on the at least one lever section (121) of the lever structure (120). [15] MEMS device according to at least one of the preceding claims, characterized by , that the holding and spring structure holds the movable element (170) movable with respect to two axes (A1, A2) relative to the frame structure (110), in particular pivotable about the two axes (A1, A2), wherein the at least one actuating actuator (601) of the at least one actuating area section (181) is configured to generate a translatory and / or rotational displacement, in particular an actuating movement, of at least a part of the holding and spring structure relative to the frame structure (110). [16] MEMS device according to claim 15, characterized bythat the at least one actuating actuator (601) of the at least one actuating range section (181) is configured to generate the displacement, in particular actuating movement, of at least part of the holding and spring structure (120, 130; 120, 130, 140, 160) relative to the frame structure (110) in a direction parallel to a plane of the two axes (A1, A2); or the at least one actuating actuator (601) of the at least one actuating range section (181) is configured to generate the displacement, in particular actuating movement, of at least part of the holding and spring structure (120, 130; 120, 130, 140, 160) relative to the frame structure (110) with at least one component in a direction parallel to a plane of the two axes (A1, A2) and / or with at least one component in a direction transverse, in particular perpendicular, to the plane of the two axes (A1, A2). [17] MEMS device according to claim 15 or 16, characterized by , that the at least one actuating actuator (601) of the at least one actuating range section (181) is configured to generate the displacement, in particular actuating movement, of at least part of the holding and spring structure (120, 130; 120, 130, 140, 160) relative to the frame structure (110) statically, quasi-statically and / or dynamically in the resonant operation of the two axes (A1, A2) and / or in the at least partially non-resonant operation of the MEMS device, in which at least one of the two axes (A1, A2) is operated non-resonantly, in particular: for the static, quasi-static and / or dynamic compensation of manufacturing-related process tolerances, in particular in resonant operation and / or in at least partially non-resonant operation; for the static, quasi-static and / or dynamic compensation of thermal influences, in particular in resonant operation and / or in at least partially non-resonant operation; for the static, quasi-static and / or dynamic compensation of a process tolerance-related symmetry error of the holding and / or spring structure, in particular in resonant operation and / or in at least partially non-resonant operation; for statically, quasi-statically and / or dynamically adjusting and / or setting resonance frequencies of the movement of the movable element (170) with respect to the two axes relative to the frame structure (110), in particular in resonant operation and / or in at least partially non-resonant operation; for statically, quasi-statically and / or dynamically adjusting and / or setting a ratio of the resonance frequencies of the movement of the movable element (170) with respect to the two axes (A1, A2) relative to the frame structure (110), in particular in resonant operation and / or in at least partially non-resonant operation; for statically, quasi-statically and / or dynamically compensating for cross-coupling of the movement of the movable element (170) with respect to the two axes (A1, A2) relative to the frame structure (110), in particular in resonant operation and / or in at least partially non-resonant operation; for tuning the resonance frequencies and / or the ratio of the resonance frequencies of the movement of the movable element (170) with respect to the two axes relative to the frame structure (110), in particular in resonant operation and / or in at least partially non-resonant operation; and / or for statically, quasi-statically and / or dynamically adjusting and / or setting respective eigenforms and / or respective eigenfrequencies of one or more oscillation modes of an oscillation of the movable element (170) with respect to one or more of the two axes (A1, A2) relative to the frame structure (110), in particular in resonant operation and / or in at least partially non-resonant operation. [18] MEMS device according to at least one of claims 15 to 17, characterized byin that the at least one actuating actuator (601) of the at least one actuating range section (181) is designed to generate a translatory and / or rotational displacement, in particular an actuating movement, of at least part of the holding and spring structure relative to the frame structure (110) with at least one component in the direction of a first axis (A1; A2) of the two axes (A1, A2) and / or with at least one component transverse to a second axis (A1; A2) of the two axes (A1, A2). [19] MEMS device according to at least one of claims 15 to 18, characterized byin that the at least one actuating actuator (601) of the at least one actuating range section (181) is designed to generate a translatory and / or rotational displacement, in particular an actuating movement, of at least part of the holding and spring structure relative to the frame structure (110) with at least one component in a direction oblique to the first axis (A1; A2) of the two axes (A1, A2) and / or with at least one component oblique to a second axis (A1; A2) of the two axes (A1, A2). [20] MEMS device according to at least one of the preceding claims, characterized by , that the holding and spring structure comprises a plurality of adjustment range sections (181-184; 185-188), each adjustment range section comprising at least one respective actuating actuator (601; 602; 603; 604), wherein each of the at least one respective actuating actuator (601; 602; 603; 604) of the actuating range sections (181-184; 185-188) is configured to generate a corresponding translational and / or rotational displacement, in particular actuating movement, of at least a part of the holding and spring structure relative to the frame structure (110). [21] MEMS device according to at least one of the preceding claims, characterized by that the at least one actuating actuator (601) of the at least one actuating range section (181) comprises a piezoelectric actuator, a magnetic actuator and / or an electrical, electromagnetic and / or electrostatic actuator, in particular with a capacitor and / or comb drive. [22] Layer structure for a MEMS device, wherein the layer structure comprises at least one structured functional layer (100), and wherein the at least one structured functional layer (100) comprises a frame structure (110), a movable element (170), and a holding and spring structure with at least one adjustment area section (181), wherein the holding and spring structure (120, 130; 120, 130, 140, 160) is connected to the frame structure (110) and holds the movable element (170) movable relative to the frame structure (110) with respect to at least one axis (A1; A2), in particular pivotable about the at least one axis (A1), wherein the at least one adjustment range section (181) comprises at least one actuating actuator (601) for generating a force in a first direction and for generating a displacement, in particular an adjusting movement, of at least a part of the holding and spring structure (120, 130; 120, 130, 140, 160) relative to the frame structure (110), and wherein the at least one adjustment region section (181) of the holding and spring structure has an adjustment region (501) deformable in the first direction, which comprises one or more elongated and / or strip-shaped openings extending in the longitudinal direction transverse to the first direction. [23] A method for producing a MEMS device according to at least one of claims 1 to 21 or a layer structure according to claim 22, comprising: - providing a layer structure comprising at least one functional layer (100), and - Structuring the at least one functional layer (100), wherein in the structuring of the at least one functional layer (100) a frame structure (110), a movable element (170), and a holding and spring structure with at least one adjustment area section (181) are formed, wherein the holding and spring structure (120, 130; 120, 130, 140, 160) is connected to the frame structure (110) and holds the movable element (170) movable with respect to at least one axis (A1; A2) relative to the frame structure (110), in particular pivotable about the at least one axis (A1), wherein the at least one adjustment range section (181) comprises at least one actuating actuator (601) for generating a force in a first direction and for generating a displacement, in particular an adjusting movement, of at least a part of the holding and spring structure (120, 130; 120, 130, 140, 160) relative to the frame structure (110), and wherein the at least one adjustment region section (181) of the holding and spring structure has an adjustment region (501) deformable in the first direction, which comprises one or more elongated and / or strip-shaped openings extending in the longitudinal direction transverse to the first direction.

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