Semiconductor device with a removable film, power electronics design and method for manufacturing a semiconductor device

Abstract

Semiconductor device (100) comprising: at least one power semiconductor chip (110), a substrate (120), preferably a conductor frame part, comprising a first side (121) and an opposing second side (122), wherein the power semiconductor chip (110) is arranged over the first side (121), an encapsulation (130) encapsulating the power semiconductor chip (110), a pre-cured lamination layer (140) covering the second side (122) of the substrate (120), wherein the pre-cured lamination layer (140) is exposed by the encapsulation (130) and is configured to provide electrical insulation for the substrate (120) after curing, a removable film (150) covering the pre-cured lamination layer (140), wherein the removable film (150) is configured to be removed from the pre-cured to be removed from the lamination layer (140) and one or more connection points (141),which connect the pre-cured lamination layer (140) to the second side (122) of the substrate (120) and the removable film (150) to the pre-cured lamination layer (140), wherein one or more connection points (141) comprise or consist of cured material of the pre-cured lamination layer (140).

Description

TECHNICAL FIELDThe invention relates generally to a semiconductor device, in particular a semiconductor device with a removable foil, and to a power electronics arrangement with a semiconductor device and to a method for producing a semiconductor device.BACKGROUNDA semiconductor device, for example a semiconductor package or a semiconductor module, may comprise one or more semiconductor chips arranged on a substrate. The substrate may be configured to be coupled to a heat sink to dissipate heat generated by the semiconductor die(s) during operation. It may be desirable to provide electrical isolation between the semiconductor chips and the heat sink such that the heat sink is not at the potential of the semiconductor chips. Such insulation may be provided, for example, by substrates with an incorporated insulation layer, e.g., a Direct Copper Bond (DCB) substrate. However, among other things, these substrate types may be comparatively expensive and / or increase the complexity of the manufacturing process of the semiconductor device. WO 2015 / 141 797 A1 discloses a semiconductor device with a cured laminate layer between a substrate of the semiconductor device and a cooling body. Improved semiconductor devices, improved power electronics assemblies including semiconductor devices, and improved methods of manufacturing a semiconductor device may help solve these and other problems.SUMMARYVarious aspects relate to a semiconductor device comprising: at least one power semiconductor chip; a substrate, preferably a leadframe part, comprising a first side and an opposite second side, the power semiconductor chip being arranged over the first side; an encapsulant encapsulating the power semiconductor chip; a pre-cured lamination layer covering the second side of the substrate, the pre-cured lamination layer being exposed from the encapsulant and the pre-cured lamination layer being configured to provide electrical insulation for the substrate after curing; and a releasable sheet covering the pre-cured lamination layer, the releasable sheet being configured to be removed from the pre-cured lamination layer.Various aspects relate to a power electronics assembly comprising: a removable foil; A plurality of semiconductor packages or semiconductor modules disposed on the removable foil and comprising: at least one power semiconductor die; a substrate, preferably a leadframe part, comprising a first side and an opposite second side, the power semiconductor die being disposed over the first side; an encapsulant encapsulating the power semiconductor die; and a precured lamination layer covering the second side of the substrate, the precured lamination layer being exposed from the encapsulant and the precured lamination layer being configured to provide electrical insulation for the substrate after curing; wherein the semiconductor packages or semiconductor modules are disposed on the removable foil such that the removable foil covers the precured lamination layer, and wherein the removable foil is configured to be removed from the precured lamination layer.Various aspects relate to a method for manufacturing a semiconductor device, the method comprising: providing at least one power semiconductor chip, providing a substrate, preferably a leadframe part, comprising a first side and an opposite second side, wherein the power semiconductor chip is arranged over the first side, providing an encapsulant encapsulating the power semiconductor chip, laminating over the second side of the substrate with a pre-cured lamination layer such that the pre-cured lamination layer is exposed from the encapsulant, wherein the pre-cured lamination layer is configured to provide electrical insulation for the substrate after curing, and covering the pre-cured lamination layer with a releasable foil, wherein the releasable foil is configured to be removed from the pre-cured lamination layer.BRIEF DESCRIPTION OF THE DRAWINGSThe accompanying drawings illustrate examples and together with the description serve to explain principles of the invention. Other examples and many of the intended advantages of the invention will be readily apparent from the following detailed description. The elements of the drawings are not necessarily to scale with respect to each other. Identical reference numerals designate corresponding similar parts. FIG. 1 is a sectional view of a semiconductor device having a pre-cured lamination layer and a releasable sheet covering the pre-cured lamination layer. FIG. 2 shows a sectional view of another semiconductor device, wherein the pre-cured lamination layer also comprises bonding points with an increased adhesion force between a substrate, the pre-cured lamination layer and the releasable foil. FIG. 3 shows a perspective view of a power electronics arrangement, wherein semiconductor housings or semiconductor modules are arranged on a detachable foil. FIGS. 4A to 4E show a further semiconductor device or a further power electronics arrangement in different production stages. FIG. 5 is a flow diagram of an example method of manufacturing a semiconductor device.DETAILED DESCRIPTIONIn the following detailed description, structures and elements are shown in schematic form to facilitate the description of one or more aspects of the invention. In this regard, directional terminology, such as "top", "bottom", "left", "right", "top", "bottom", etc., is used for purposes of illustration only with reference to the orientation of the Da components of the invention may be positioned in a number of different orientations.Additionally, while a particular feature or aspect of an example may be disclosed with respect to only one of several implementations, such feature or aspect may be combined with one or more other features or aspects of the other implementations as may be desired and advantageous for any given or particular application, unless expressly stated otherwise or technically limited. Further, to the extent that the terms "include," "have," "with," or other variants thereof are used in either the detailed description or the claims, such terms are intended to be inclusive in a manner similar to the term "comprise.". The terms "coupled" and "connected" may be used together with derivatives thereof. It will be understood that these terms may be used to indicate that two elements cooperate or interact with each other, whether in direct physical or electrical contact or not in direct contact with each other; intervening elements or layers may be provided between the "bonded", "attached", or "connected" elements. However, it is also possible for the "bonded", "attached" or "connected" elements to be in direct contact with one another. Moreover, the term "exemplary" is intended to be merely an example and not the best or optimum.The examples of a semiconductor device described below may use various types of semiconductor chips or circuits integrated into the semiconductor chips, for example transistor structures in which at least one electrical contact pad is arranged on a first main surface of the semiconductor chip and at least one other electrical contact pad is arranged on a second main surface of the semiconductor chip opposite the first main surface of the semiconductor chip.For example, an efficient semiconductor device, an efficient method of manufacturing a semiconductor device, and an efficient power electronics arrangement may reduce material consumption, ohmic losses, chemical wastes, etc., and thus may allow for energy and / or resource savings. Improved semiconductor devices, improved methods of manufacturing a semiconductor device, and improved power electronics assemblies as indicated in this specification may thus contribute at least indirectly to green technology solutions, i.e., climate friendly solutions that provide mitigation of energy and / or resource usage.FIG. 1 shows a cross-sectional view of a semiconductor device 100 comprising at least a power semiconductor chip 110, a substrate 120, an encapsulant 130, a pre-cured lamination layer 140, and a releasable foil 150.The semiconductor device 100 may be, for example, a power semiconductor device configured to operate at a high voltage and / or a high electric current. The semiconductor device 100 may include, for example, a converter circuit, an inverter circuit, a half bridge circuit, a full bridge circuit, etc. The semiconductor device 100 may also be part of such a circuit, wherein a plurality of devices are connected to form the circuit. According to an example, the semiconductor device 100 is a discrete device and may be a semiconductor package, for example. According to another example, the semiconductor device 100 is a semiconductor module.The semiconductor device 100 may have any suitable dimensions. For example, the semiconductor device 100 may have a length 1 in the range of about 1 cm to about 30 cm. The lower limit of this range may also be about 2 cm, 3 cm or 5 cm, and the upper limit may also be about 20 cm, 15 cm, 10 cm or 8 cm. The semiconductor device 100 may have a height h in the range of about 1 mm to about 5 cm, for example. The lower limit of this range may also be about 2 mm, 3 mm, 4 mm, 5 mm or 6 mm, and the upper limit may also be about 4 cm, 3 cm, 2 cm, 1 cm or 8 mm. The semiconductor device 100 may have a width (the width being perpendicular to the length 1 and the height h) that is about equal to or less than the length 1.The substrate 120 is preferably a lead frame member. However, the substrate 120 may be of the Direct Copper Bonded (DCB), Direct Aluminum Bonded (DAB), Active Metal Bonded (AMB), Insulated Metal Substrate (IMS), etc. type. The substrate 120 includes a first side 121 and an opposing second side 122. The power semiconductor chip 110 is disposed over the first side 110. The power semiconductor chip 110, in particular a first power electrode on the lower side of the power semiconductor chip 110, may be electrically and mechanically coupled to the first side 121 of the substrate 120, for example via a solder connection, sinter connection or via conductive adhesive. The semiconductor device 100 may include, for example, two power semiconductor chips 110, wherein first power electrodes of the two power semiconductor chips 110 are connected to each other via the substrate 120.The encapsulant 130 encapsulates the power semiconductor die 110. According to one example, the encapsulation 130 comprises or consists of a molded body. According to another example, the encapsulant 130 comprises or consists of a frame, wherein the power semiconductor chip 110 is arranged within the frame and is covered by a suitable potting material. The frame can be, for example, a plastic frame or a metal frame. The encapsulant 130 may comprise or consist of any suitable polymer material or mold material and may also comprise inorganic filler particles configured to reduce the thermal resistance of the semiconductor device 100. A molded body can be produced using, for example, compression molding, injection molding, or transfer molding.The pre-cured lamination layer 140 covers the second side 122 of the substrate 120. In particular, the pre-cured lamination layer 140 may completely cover the second side 122 of the substrate 120 and / or may be directly disposed on the second side 122 of the substrate 120. According to the example shown in FIG. 1, the pre-cured lamination layer 140 may also cover a second side 132 of the encapsulant 130. The layer 140 being "pre-cured" may mean that at least a portion of the layer 140 has not undergone a curing process. For this reason, the pre-cured lamination layer 140 may include a solvent and / or be relatively flexible and / or relatively smooth. However, as described in more detail below, the pre-cured lamination layer 140 may include individual points that have been cured.The pre-cured lamination layer 140 is exposed from the encapsulant 130. For example, the encapsulant 130 could be disposed on only one side of the pre-cured lamination layer 140. Further, the pre-cured lamination layer 140 is configured to provide electrical insulation to the substrate 120 after a curing process is performed on the pre-cured lamination layer. Such a curing process may include, for example, applying heat and / or radiation to cure the layer 140.The pre-cured lamination layer 140 may include or consist of any suitable lamination material. For example, a laminating material having a comparatively low thermal resistance and / or a comparatively high electrical resistance may be used. The pre-cured lamination layer 140 may comprise a fabric and / or a thermoplastic and / or a thermosetting polymer. The pre-cured lamination layer 140 may in particular have a different material composition than the encapsulation 130, for example at least because the encapsulation 130 may not comprise or consist of a laminate.The pre-cured lamination layer 140 may have any suitable dimensions. For example, the pre-cured lamination layer 140 may have a thickness in the range of about 50 μm to about 1 mm (wherein the thickness is measured parallel to the height h of the semiconductor device 100). The lower limit of this range may also be about 100 μm, 150 μm, or 200 μm, and the upper limit may also be about 800 μm, 600 μm, 400 μm, or 300 μm.The pre-cured lamination layer 140 may have about the same length and width as the encapsulant 130, for example. However, it is also possible that the length and / or the width of the pre-cured lamination layer 140 is e.g. 10% or more or 20% or more or 30% or more smaller or larger than the length and / or the width of the encapsulation 130.The removable film 150 covers the precured lamination layer 140. In particular, the removable film 150 may completely cover the pre-cured lamination layer 140. The removable film 150 may be disposed directly on the pre-cured lamination layer 140. The removable sheet 150 is configured to be removed from the pre-cured lamination layer 140, for example, to place the semiconductor device 100 over a heat sink such that the layer 140 is in contact (in particular, in direct contact) with the heat sink. Disposing the semiconductor device 100 over such a heat sink may include curing the layer 140 to cure the layer 140 and / or mechanically attach the semiconductor device 100 to the heat sink.The removable film 150 may be configured to be removed from the pre-cured lamination layer 140 by automated equipment (e.g., to be stripped from the pre-cured lamination layer 140). The removable film 150 may comprise or consist of any suitable material. The removable foil 150 may comprise or consist of, for example, a plastic, a polymer or a metal (e.g. Cu).An adhesive force between the substrate 120 and the pre-cured lamination layer 140 may be greater than an adhesive force between the pre-cured lamination layer 140 and the detachable film 150. This may be due to, for example, the removable film 150 having a smooth surface than the substrate 120 and / or due to the removable film 150 being made of a suitable anti-stick material or covered with a suitable anti-stick coating.The removable film 150 may have any suitable dimensions. For example, the removable film 150 may have a thickness in the range of about 100 μm to about 5 mm. The lower limit of this range may also be about 200 μm, 300 μm, or 500 μm, and the upper limit may also be about 3 mm, 2 mm, 1 mm, or 800 μm.FIG. 2 shows a cross-sectional view of another semiconductor device 200 that may be similar or identical to the semiconductor device 100, except for the differences described below.The semiconductor device 200 may include all of the components described with respect to FIG. 1, and may additionally include one or more connection points 141 connecting the pre-cured lamination layer 140 to the second side 122 of the substrate 120. Further, the one or more connection points 141 connect the removable sheet 150 to the pre-cured lamination layer 140. The one or more connection points 141 may include or consist of, for example, cured material of the pre-cured lamination layer 140.Manufacturing the semiconductor device 200 may include disposing the power semiconductor chip 110, the substrate 120, the pre-cured lamination layer 140, and the detachable sheet 150 one above the other as shown in FIG. 2, and locally curing the pre-cured lamination layer 140 to generate the connection points 141.The bond points 141 may comprise or consist of substantially the same material or material composition as the remainder of the pre-cured lamination layer 140, except that the bond points 141 have been subjected to a curing process. For this reason, the connection points 141 may be, for example, free or substantially free of any solvent present in the remainder of the pre-cured lamination layer 140. The connection points 141 may be harder than the rest of the pre-cured lamination layer 140.The hardening process may cause the pre-hardened lamination layer 140 to locally shrink at the connection points 141. For this reason, the pre-hardened lamination layer 140 may have a reduced thickness at the connection points 141. The thickness may be reduced by 10% or more, or 30% or more, or 50% or more, for example.The one or more connection points 141 may have any suitable shape and dimensions. For example, the connection points 141 may have a size (a height, a diameter, a width... ) in the range of about 200 μm to about 5 mm. The lower limit of this range may also be about 400 μm, 600 μm, or 800 μm, and the upper limit may also be about 3 mm, 2 mm, or 1 mm.The connection points 141 may be arranged in any suitable manner, in particular in any suitable pattern, within the pre-cured lamination layer 140. For example, the connection points 141 may be located near the four corners of the pre-hardened lamination layer 140, along the edges of the pre-hardened lamination layer 140, in the middle of the pre-hardened lamination layer 140, etc. The semiconductor module 200 may include any suitable number of the connection points 141, e.g., one, two, three, four, five, etc.The connection points 141 may constitute a comparatively small part of the total surface area of the pre-cured lamination layer 140. For example, the connection points 141 may constitute 30% or less or 20% or less or 10% or less or 5% or less of the total surface area of the pre-cured lamination layer 140.According to an example, an adhesive force (in particular an adhesive force per surface) between the substrate 120 and the pre-cured lamination layer 140 in the one or more connection points 141 is at least twice greater than an adhesive force between the substrate 120 and the pre-cured lamination layer 140 outside the connection points 141.According to an example, the semiconductor device 200 comprises one or more external contacts 210 electrically coupled to the one or more power semiconductor chips 110. The external contacts 210 may include or consist of lead frame parts, for example. The external contacts 210 may be coupled to power electrodes of the power semiconductor chips 110, for example.FIG. 3 shows a perspective view of a power electronics assembly 300 that substantially comprises a plurality of semiconductor devices 200 having a common releasable foil 150. The power electronics assembly 300 may also include the semiconductor devices 100. The power semiconductor arrangement 300 may include any number of semiconductor devices, e.g., two, three, four,... ten,... 50 etc.As shown in FIG. 3, the removable film 150 may be a strip, particularly a strip configured to be handled by a pick-and-place feeder. The semiconductor devices of the power electronics assembly 300 may all be disposed on the same side of the removable foil 150. The strip may include a trace of stipplings 151 configured to interact with a gear, e.g., a gear of a pick-and-place loader. The example of Fig. 3 shows a single track of functions 151, but the strip may of course also comprise, for example, two such tracks.FIGS. 4A to 4E show different manufacturing stages of a semiconductor device according to an exemplary method of manufacturing a semiconductor device.As shown in the top view of FIG. 4A, the removable sheet 150 may be provided. A plurality of preforms of precured lamination layers 140 are disposed on the removable sheet 150. The rest of the semiconductor devices 100 or 200 may be disposed on the preforms of the pre-cured lamination layers 140, for example, by a pick-and-place process.As shown in the sectional view of FIG. 4B, pressure and heat are applied to the pre-cured lamination layer 140 to generate the bond points 141. A tool comprising, for example, pins or fins at the designated positions of the connection points 141 may be used to apply pressure and / or heat to the pre-cured lamination layer 140 in a localized manner.FIG. 4C shows a semiconductor device 200 after the connection points 141 have been formed. In this state, the connection points 141 attach the semiconductor package or module to the detachable sheet 150. No further fastening means may be necessary and the semiconductor device 100 or 200 or the power electronics arrangement 300 may be securely handled, for example shipped, without contaminating or damaging the pre-cured lamination layer 140. In particular, the removable film 150 may prevent the pre-cured lamination layer 140 from collecting dust that could adversely affect the electrical isolation properties and / or mechanical attachment properties of the pre-cured lamination layer 140.As shown in FIG. 4D, the removable foil 150 may be removed to fabricate a semiconductor device 200'. The semiconductor device 200' may be identical to the semiconductor device 200 except for the absence of the detachable sheet 150. The semiconductor device 200' may be configured to be attached to a carrier. Removing the removable film 150 may include peeling the removable film 150 from the pre-cured lamination layer 140 or peeling the semiconductor device 200' from the removable film 150. The removable film 150 may include one or more tabs configured to facilitate the removal of the removable film 150.FIG. 4E shows a power electronics assembly 400 wherein the semiconductor device 200' was placed on a carrier 410 and the layer 140 was cured to form the cured lamination layer 140'. The semiconductor device may be adhered to the carrier 410 through the cured lamination layer 140'. The carrier 410 may be, for example, a metal part and / or a heat sink. The cured lamination layer 140' may electrically isolate the substrate 120 as well as the power semiconductor chip 110 from the carrier 410. For this reason, it may not be necessary to provide additional electrical insulation between the power semiconductor chip 110 and the carrier 410. Therefore, the substrate 120 may be, for example, a comparatively expensive metal piece, for example, a lead frame part, instead of, for example, a comparatively expensive DCB.The connection points 141 may be configured to act as spacers that provide a defined distance between the substrate 120 and the carrier 410 until the rest of the layer 140 has cured. This may reduce or eliminate, for example, a tilt of the semiconductor device on the carrier 410.FIG. 5 is a flow diagram of a method 500 for manufacturing a semiconductor device. The method 500 may be used, for example, to manufacture the semiconductor device 100 or 200.The method 500 comprises at 501 a process of providing at least one power semiconductor die, at 502 a process of providing a substrate, preferably a leadframe part, comprising a first side and an opposite second side, wherein the power semiconductor die is arranged over the first side, at 503 a process of providing an encapsulant encapsulating the power semiconductor die, at 504 a process of laminating over the second side of the substrate with a pre-cured lamination layer such that the pre-cured lamination layer is exposed from the encapsulant, wherein the pre-cured lamination layer is configured to provide electrical insulation for the substrate after curing, and at 505 a process of covering the pre-cured lamination layer with a releasable foil, wherein the releasable foil is configured, to be removed from the precured lamination layer.EXAMPLESHereinafter, the semiconductor device, the method for manufacturing a semiconductor device, and the power electronic device will be further explained using specific examples.Example 1 is a semiconductor device comprising: at least one power semiconductor die; a substrate, preferably a leadframe part, comprising a first side and an opposing second side, the power semiconductor die being disposed over the first side; an encapsulant encapsulating the power semiconductor die; a pre-cured lamination layer covering the second side of the substrate, the pre-cured lamination layer being exposed from the encapsulant and the pre-cured lamination layer being configured to provide electrical insulation for the substrate after curing; and a releasable sheet covering the pre-cured lamination layer, the releasable sheet being configured to be removed from the pre-cured lamination layer.Example 2 is the semiconductor device of example 1, further comprising: one or more bond points connecting the pre-cured lamination layer to the second side of the substrate and the releasable sheet to the pre-cured lamination layer, wherein the one or more bond points comprise or consist of cured material of the pre-cured lamination layer.Example 3 is the semiconductor device of example 2, wherein the one or more connection points comprise 20% or less of the surface of the pre-cured lamination layer.Example 4 is the semiconductor device of example 2 or 3, wherein the one or more connection points are at least partially disposed at edges of the second side of the substrate.Example 5 is the semiconductor device of any one of Examples 2 to 4, wherein an adhesion force between the substrate and the pre-cured lamination layer in the one or more connection points is at least twice greater than outside the connection points.Example 6 is the semiconductor device of any of Examples 2 to 4, wherein the one or more connection points have a diameter in the range from 0.5 mm to 5 mm, in particular in the range from 1 mm to 2 mm.Example 7 is the semiconductor device of any preceding example, wherein the removable film is a strip configured to be handled by a pick-and-place feeder.Example 8 is the semiconductor device of example 7, wherein the stripe comprises a trace of stippling configured to interact with a gear.Example 9 is the semiconductor device of any of the preceding examples, wherein the pre-cured lamination layer has a thickness in the range from 100 μm to 500 μm, in particular in the range from 200 μm to 300 μm.Example 10 is the semiconductor device of any of the preceding examples, wherein the removable foil comprises or consists of one or more of Cu and plastic.Example 11 is the semiconductor device of any of the preceding examples, wherein an adhesion force between the substrate and the pre-cured lamination layer is greater than an adhesion force between the pre-cured lamination layer and the removable film.Example 12 is a power electronics assembly comprising: a removable foil; A plurality of semiconductor packages or semiconductor modules disposed on the removable foil and comprising: at least one power semiconductor die; a substrate, preferably a leadframe part, comprising a first side and an opposite second side, the power semiconductor die being disposed over the first side; an encapsulant encapsulating the power semiconductor die; and a precured lamination layer covering the second side of the substrate, the precured lamination layer being exposed from the encapsulant and the precured lamination layer being configured to provide electrical insulation for the substrate after curing; wherein the semiconductor packages or semiconductor modules are disposed on the removable foil such that the removable foil covers the precured lamination layer, and wherein the removable foil is configured to be removed from the precured lamination layer.Example 13 is the power electronics assembly of example 12, wherein the semiconductor packages or semiconductor modules further comprise: one or more connection points that connect the pre-cured lamination layer to the second side of the substrate and the releasable foil to the pre-cured lamination layer, wherein the one or more connection points comprise or consist of cured material of the pre-cured lamination layer.Example 14 is the power electronics assembly of example 12 or 13, wherein the removable film is a strip configured to be handled by a pick-and-place feeder.Example 15 is the power electronics assembly of example 15, wherein the strip comprises a trace of stippling configured to interact with a gear.Example 16 is a method of manufacturing a semiconductor device, the method comprising: providing at least one power semiconductor die; providing a substrate, preferably a leadframe part, comprising a first side and an opposite second side, the power semiconductor die being disposed over the first side; providing an encapsulant encapsulating the power semiconductor die; laminating over the second side of the substrate with a pre-cured lamination layer such that the pre-cured lamination layer is exposed from the encapsulant, wherein the pre-cured lamination layer is configured to provide electrical insulation for the substrate after curing; and covering the pre-cured lamination layer with a releasable foil, wherein the releasable foil is configured to be removed from the pre-cured lamination layer.Example 17 is the method of Example 16, further comprising: bonding the pre-cured lamination layer to the second side of the substrate and the release liner to the pre-cured lamination layer by locally curing the pre-cured lamination layer at one or more bond points.Example 18 is the method of example 17, wherein locally curing the pre-cured lamination layer comprises locally applying heat and pressure using pins or fins.Example 19 is the method of any one of Examples 16 to 18, wherein the pre-cured lamination layer is provided as a preform disposed on the release sheet, and wherein laminating over the second side of the substrate comprises placing the substrate on the preform.Example 20 is the method of any one of Examples 16 to 19, wherein the removable film is a strip configured to be handled by a pick-and-place feeder.Example 21 is an apparatus comprising means for performing the method of any one of Examples 16 to 20.While the invention has been illustrated and described with respect to one or more implementations, changes and / or modifications may be made to the illustrated examples without departing from the spirit and scope of the appended claims. In particular, with respect to the various functions performed by the above-described components or structures (assemblies, devices, circuits, systems, etc.), the terms (including a reference to a "means") used to describe such components, unless otherwise stated, are intended to correspond to any component or structure that performs the specified function of the described component (e.g., that is functionally equivalent), even though not structurally equivalent to the disclosed structure that performs the function in the example implementations of the invention illustrated herein.

Claims

A semiconductor device (100) comprising: at least one power semiconductor die (110); a substrate (120), preferably a leadframe part, comprising a first side (121) and an opposite second side (122), wherein the power semiconductor die (110) is arranged over the first side (121); an encapsulant (130) encapsulating the power semiconductor die (110); a pre-cured lamination layer (140) covering the second side (122) of the substrate (120), wherein the pre-cured lamination layer (140) is exposed from the encapsulant (130) and the pre-cured lamination layer (140) is configured to provide electrical insulation for the substrate (120) after curing; a releasable foil (150) covering the pre-cured lamination layer (140), wherein the releasable foil (150) is configured, to be removed from the pre-cured lamination layer (140), and one or more bond points (141) connecting the pre-cured lamination layer (140) to the second side (122) of the substrate (120) and the release sheet (150) to the pre-cured lamination layer (140), wherein the one or more bond points (141) comprise or consist of cured material of the pre-cured lamination layer (140).The semiconductor device (200) of claim 1, wherein the one or more connection points (141) comprise 20% or less of the surface of the pre-cured lamination layer (140).The semiconductor device (200) of claim 1 or 2, wherein the one or more connection points (141) are at least partially arranged at edges of the second side (122) of the substrate (120).The semiconductor device (200) according to any one of claims 1 to 3, wherein an adhesive force between the substrate (120) and the pre-cured lamination layer (140) in the one or more connection points (141) is at least twice greater than outside the connection points (141).The semiconductor device (200) according to any one of claims 1 to 3, wherein the one or more connection points (141) have a diameter in the range of 0.5 mm to 5 mm, in particular in the range of 1 mm to 2 mm.The semiconductor device (100) of any preceding claim, wherein the removable film (150) is a strip configured to be handled by a pick-and-place feeder.The semiconductor device (100) of claim 6, wherein the stripe comprises a trace of stipplings (151) configured to interact with a gear.The semiconductor device (100) according to any one of the preceding claims, wherein the pre-cured lamination layer (140) has a thickness in the range of 100 μm to 500 μm, in particular in the range of 200 μm to 300 μm.The semiconductor device (100) according to any one of the preceding claims, wherein the removable foil (150) comprises or consists of one or more of Cu and plastic.The semiconductor device (100) according to any one of the preceding claims, wherein an adhesive force between the substrate (120) and the pre-cured lamination layer (140) is greater than an adhesive force between the pre-cured lamination layer (140) and the detachable film (150).A power electronics assembly (300) comprising: a removable foil (150); and a plurality of semiconductor packages or semiconductor modules disposed on the removable foil and comprising: at least one power semiconductor die (110); a substrate (120), preferably a leadframe part, comprising a first side (121) and an opposite second side (122), wherein the power semiconductor die (110) is disposed over the first side (121); an encapsulant (130) encapsulating the power semiconductor die (110); and a pre-cured lamination layer (140) covering the second side (122) of the substrate (120), wherein the pre-cured lamination layer (140) is exposed from the encapsulant (130) and the pre-cured lamination layer (140) is configured to provide electrical insulation for the substrate (120) after curing, wherein the semiconductor packages or semiconductor modules are arranged on the detachable foil (150) such that the detachable foil (150) covers the pre-hardened lamination layer (140), and wherein the detachable foil (150) is configured to be removed from the pre-hardened lamination layer (140).The power electronics assembly (300) of claim 11, wherein the semiconductor packages or semiconductor modules further comprise: one or more connection points (141) connecting the pre-cured lamination layer (140) to the second side (122) of the substrate (120) and the releasable sheet (150) to the pre-cured lamination layer (140), wherein the one or more connection points (141) comprise or consist of cured material of the pre-cured lamination layer (140).The power electronics assembly (300) of claim 11 or 12, wherein the removable foil (150) is a strip configured to be handled by a pick-and-place feeder.The power electronics assembly (300) of claim 13, wherein the strip comprises a trace of stipplings (151) configured to interact with a gear.A method (500) of manufacturing a semiconductor device, the method (500) comprising: providing (501) at least one power semiconductor die; providing (502) a substrate, preferably a leadframe part, comprising a first side and an opposite second side, the power semiconductor die being arranged over the first side; providing (503) an encapsulant encapsulating the power semiconductor die; laminating (504) over the second side of the substrate with a pre-cured lamination layer such that the pre-cured lamination layer is exposed from the encapsulant, wherein the pre-cured lamination layer is configured to provide electrical insulation for the substrate after curing; covering (505) the pre-cured lamination layer with a releasable foil, wherein the releasable foil is configured to be removed from the pre-cured lamination layer, and bonding the pre-cured lamination layer to the second side of the substrate and the release sheet to the pre-cured lamination layer by locally curing the pre-cured lamination layer at one or more bond points.The method (500) of claim 15, wherein locally curing the pre-cured lamination layer comprises locally applying heat and pressure using pins or fins.The method (500) of any of claims 15 to 16, wherein the precured lamination layer is provided as a preform disposed on the release sheet, and wherein laminating (504) over the second side of the substrate comprises placing the substrate on the preform.The method (500) of any of claims 15 to 17, wherein the removable film is a strip configured to be handled by a pick and place feeder.

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