Substrate-near ECR plasma source for surface treatment

Abstract

Plasma source (100) for surface treatment of one or more substrates (116) comprising: a vacuum chamber (108), a voltage source (128), a material feed source (130), a magnet arrangement (122a, 122b) with magnets (112, 112a), wherein the magnets (112, 112a), preferably permanent magnets (112a), are aligned with each other such that an electron cyclotron resonance condition is satisfied, an apparatus (126) for generating and transmitting electromagnetic waves (120), wherein the apparatus (126) comprises a generator (104) for generating electromagnetic waves (120), an antenna (102) and a conductor (106), and at least one or more substrate holding devices for holding the one or more substrates (116), such as a substrate tree, wherein a substrate bias is applied to the one or more substrates (116) by means of the A voltage source (128) can be applied, which can be switched on and off.

Description

[0001] The invention relates to a substrate-near ECR plasma source for surface treatment in vacuum coating systems. The device features a special arrangement of magnets, the position of which can be adjusted, allowing a plasma volume to be adjusted, and utilizes electron cyclotron resonance via an electromagnetic wave. State of the art

[0002] Document DE 10 2020 201 829 A1 relates to a device and method for producing coatings with adjustable layer thickness distribution in coating systems with horizontally rotating substrate guides. Both a highly homogeneous and a deliberately inhomogeneous distribution can be achieved. Furthermore, particle loading is significantly reduced. The service life is significantly increased compared to other processes. This results in a reduction in interfering layers.

[0003] Document DE 40 10 663 A1 discloses a device and a method for producing coatings on the surface of workpieces, preferably plastic headlight reflector inserts, in a vacuum chamber operated as a batch system using a PCVD coating process. A microwave ECR plasma coating source is used, and the front surface mirrors to be coated are attached to a rotating cage located in the vacuum chamber, which can be moved past the coating source with a frequency- and phase-controlled planetary motion. The coating processes, such as the metallization of the substrate surface by applying an aluminum layer, can be carried out in the vacuum chamber under plasma and pressures below 2×10^-2 mbar.

[0004] DE 39 20 835 A1 relates to a device for vapor deposition of thin films onto a substrate. This device comprises a magnetron cathode with a target positioned opposite the substrate. A particle generator generates ions of a reactive gas and accelerates them onto the substrate, where a reaction occurs between the target particles and the reactive gas particles. Disclosure of the invention

[0005] According to a first aspect of the invention, a plasma source for surface treatment of one or more substrates is proposed, comprising a vacuum chamber, a voltage source, a material feed source, a magnet arrangement with magnets, wherein the magnets are preferably permanent magnets and are aligned with one another such that an electron cyclotron resonance condition is met, an apparatus for generating and transmitting electromagnetic waves, wherein the apparatus comprises a generator for generating electromagnetic waves, an antenna and a conductor, and at least one or more substrate holding devices for holding the one or more substrates, such as a substrate tree, wherein a substrate bias can be applied to the one or more substrates by means of a voltage source that can be switched on and off.

[0006] The plasma source according to the invention can be used in vacuum coating systems, where the plasma is generated between or on the magnets by electromagnetic waves. The plasma is generated and maintained by energetic electrons, whose rotational motion around the magnetic field line is accelerated by an additional superimposed electromagnetic wave. If the rotational frequency matches the frequency of the electromagnetic wave, an electron cyclotron resonance motion occurs, which ultimately generates the plasma. The plasma source can be used, for example, as a PECVD source and for post-ionization in PVD processes, as well as for substrate pretreatment such as plasma etching.

[0007] PVD (physical vapor deposition) refers to a process for depositing layers (e.g., metals, alloys, or other materials) from the vapor phase using thermal energy or particle bombardment, such as evaporation into a plasma or sputtering by ion bombardment. A plasma-enhanced PVD coating process enables the deposition of dense, fine-crystalline layers. A PECVD source is a device that generates the plasma required for PECVD coating, while PECVD (plasma-enhanced chemical vapor deposition) is a process for depositing chemical layers from the vapor phase.

[0008] An electron cyclotron resonance (ECR) plasma source within the meaning of the present invention is a plasma source generated by means of a magnetic field and an electromagnetic wave. A magnetic field is adjusted such that the cyclotron frequency of electrons in the magnetic field interacts with the frequency of an electromagnetic wave between or on permanent magnets, accelerating the electrons. This leads to an increase in the energy of the electrons, which then collide with the atoms of a gas and ionize the gas. A gas stream is introduced into a vacuum chamber, for example, through a valve located on the side or bottom of the chamber, or through a gas line source or hose. Plasma formation between the magnets is achieved by introducing gas and coupling an electromagnetic wave into the vacuum chamber, whereby the introduced gas is ionized and converted into a plasma.

[0009] According to the invention, an electron cyclotron resonance condition is achieved during plasma generation by arranging a magnet alignment such that a magnetic field generated by the magnets forces the electrons into a circular orbit around the field lines of the magnetic field. If the frequency of the electromagnetic wave fed into a plasma source corresponds to the cyclotron frequency of the electrons, a resonance occurs between the wave and the electrons. This leads to increased energy transfer to the electrons and the formation of a plasma. To fulfill the electron cyclotron resonance condition within the meaning of the invention, a magnetic field is used that is aligned parallel or at an angle to the direction of the electromagnetic wave.

[0010] An apparatus for generating electromagnetic waves according to the invention comprises a generator, a conductor, and an antenna. A generator is a part of the apparatus that converts electrical energy into electromagnetic radiation. A generator generates an electromagnetic field by passing current through the conductor connected to the antenna. A conductor is a part of the apparatus that conducts the electrical current from the generator to the antenna. It is made of a material with good electrical conductivity, for example copper or aluminum, and is shaped to generate a specific frequency of electromagnetic waves. It can be, for example, a waveguide or a coaxial conductor. An antenna is the part of the apparatus that radiates the electromagnetic waves into space. An antenna consists of a metal rod or a surface that is electrically connected to the conductor.The shape of the antenna determines the type of electromagnetic waves generated. An example of an antenna shape is the dipole antenna, which consists of two parallel rods, each connected to one end of a conductor. Such an antenna generates electromagnetic waves with a specific polarization that depends on the orientation of the rods. These components together generate and radiate electromagnetic waves. The interaction of all these components generates and radiates electromagnetic waves. The generator creates an electromagnetic field by sending current through the conductor. The current is conducted via the conductor to the antenna, which radiates the electromagnetic waves into space.

[0011] For the purposes of the invention, an antenna, such as an RF coil or a microwave antenna, is used to generate electromagnetic waves, which in turn are used to generate plasma. An antenna for plasma generation, for example, is designed such that an electrical energy source is coupled to a plasma and an electromagnetic field is generated that heats and ionizes the plasma.

[0012] In an advantageous development, the plasma source proposed according to the invention comprises magnets with a magnet arrangement, wherein the magnets of the magnet arrangement are arranged such that identical magnetic poles are aligned and / or the magnets are adapted to the geometry of one or more substrates, resulting in an amplification of a magnetic field. The amplification of a magnetic field through a parallel arrangement refers to the increase in field strength, which is achieved by arranging several magnets, for example, in a row or a circle. The parallel magnet arrangement has the advantage that the magnetic fields are aligned and add up, resulting in an overall higher field strength. To achieve this effect, the magnets must be arranged so that their poles point in the same direction. The magnet arrangement can be linear or circular.It is also possible to arrange the magnets at a certain distance from one another to achieve maximum amplification of a magnetic field. The amplification of a magnetic field through a parallel arrangement can, for example, be influenced by various factors such as the number and strength of the magnets as well as their spacing from one another. This amplification can be determined by measuring the field strength before and after the magnet arrangement in units of Tesla (T). The parallel arrangement of magnets improves the plasma performance by increasing the plasma density, reducing impurities, and improving the homogeneity of the magnetic field. A geometric adjustment in the sense of the invention is a positioning of magnets in which the magnets are positioned around an object, for example a substrate, such that their arrangement corresponds to a geometric shape of the object.The geometric shape can be, for example, a base area or a cross-sectional area of ​​the object and can correspond, for example, to a circle or an oval.

[0013] In the plasma source proposed according to the invention, the plasma source advantageously comprises a sputtering source for ionizing a sputtered material, wherein a sputtering source is designed, for example, as a magnetron sputtering source or as an evaporator. The sputtered material, for example a metal such as chromium, consists largely of neutral atoms and remains unaffected by the substrate bias voltage. During this process, the atoms condense with energy on the substrate and form, for example, defects that lead to a thin layer thickness. Since the sputtered material must traverse the plasma between the magnets, these defects become more strongly ionized. This increases the total ion content. These ions can, in turn, be accelerated towards the surface by the substrate bias voltage, making it, for example, denser and harder than with conventional prior art processes.

[0014] The use of an atomization source according to the invention enables precise control, namely the exact controllability of the atomized material flow as well as the coupled power of the electromagnetic wave, and thus the plasma density and temperature. Furthermore, the atomization of a material by an atomization source and ionization by the ECR plasma source leads to improved deposition performance and associated more efficient use, thereby increasing the deposition rate and reducing associated operating costs and environmental impacts, while simultaneously achieving improved layer quality and adjustable layer properties.

[0015] In the plasma source proposed according to the invention, the plasma source advantageously comprises a rotatable substrate table, wherein at least one rotatable substrate tree for applying the substrate is arranged on the substrate table, and an antenna, wherein the antenna is arranged in the center of the substrate table, plus a magnet arrangement which is arranged on the inside of the substrate table between the substrate holding devices such as substrate trees and the antenna.

[0016] In the plasma source proposed according to the invention, the plasma source advantageously comprises a rotatable substrate table, wherein at least one rotatable substrate tree for applying the substrate is arranged on the substrate table, and an antenna, wherein the antenna is arranged outside the substrate table, plus a magnet arrangement which is arranged on the outside of the substrate table.

[0017] In the plasma source proposed according to the invention, the plasma source advantageously comprises a rotatable substrate table, wherein at least one rotatable substrate tree for applying the substrate is arranged on the substrate table, and an antenna, wherein the antenna is arranged outside the substrate table, plus a magnet arrangement which is rigidly arranged outside the substrate table.

[0018] Furthermore, according to the present invention, a surface treatment of a substrate can be carried out by exposing the substrate to no rotational movement or only to a translational movement, where a translational movement of the substrate refers to a linear displacement or translation of the substrate in a specific direction. The substrate can be moved, for example, on a conveyor belt or a transport device. The translational movement of one or more substrates ensures a uniform and consistent surface treatment across the entire surface of the object.

[0019] According to the second aspect of the invention, a method for surface treatment of one or more substrates using a plasma source is proposed, comprising at least the following method steps: a. fixing one or more substrates in a predetermined arrangement in a vacuum chamber to enable the surface treatment of the one or more substrates in a surface treatment process; b. Placing magnets, preferably permanent magnets, relative to each other so that an electron resonance condition is met; c. material feed; d. generating a plasma between the magnets by an electromagnetic wave, wherein the electromagnetic wave is generated by a generator; and e. Applying a substrate bias voltage, whereby ions from a plasma are accelerated onto a substrate surface, thereby producing a surface treatment of the one or more substrates.

[0020] The inventive solution for surface treatment of one or more substrates using a plasma source makes it possible to ionize the sputtered material, such as metals, and only then accelerate it onto the surface to be coated using a substrate bias voltage. Due to the spatial separation of the coupling, i.e., a separation of the antenna and the location of plasma generation, the proposed solution also fulfills the ECR condition directly in the sputtered material stream. The antenna can, for example, be arranged so that it is not coated, thereby avoiding negative effects on the surface treatment process of one or more substrates. Furthermore, the spatial separation of the coupling prevents any influence on the plasma due to contact with the generated plasma.

[0021] A major advantage of the spatial separation of the coupling according to the invention lies in its positionability. The antenna can be rigidly arranged within the chamber. The magnets can be easily positioned within the chamber without significant design effort. In the case of post-ionization of the sputtered material, plasma generation occurs directly in the material flow from the sputtering source to the substrate. Furthermore, post-ionization by the ECR source in combination with the sputtering source decouples the sputtering process from the ionization process. The degree of ionization of the metal gas stream can thus be variably adjusted, for example, via the magnetic field strength and the power of the electromagnetic radiation.

[0022] In an advantageous development of the method according to the invention for the surface treatment of one or more substrates, it is proposed to generate the generated plasma by at least one further plasma source, such as a sputtering source.

[0023] In a further advantageous embodiment of the method proposed according to the invention for the surface treatment of one or more substrates, a controllable plasma intensity of the generated plasma is proposed, wherein the plasma intensity is controlled by adjusting the electromagnetic waves via a coupled line of a generator.

[0024] In a further advantageous embodiment of the method proposed according to the invention for the surface treatment of one or more substrates, control of the plasma properties, such as a plasma volume and / or a plasma density, is proposed via a local change in the magnet position with respect to a substrate position. Depending on the embodiment, the plasma generated between the magnets can be varied with regard to its properties, such as plasma volume and / or plasma density. This can be achieved, for example, by adjusting the intensity of the electromagnetic waves generated by the generator. Furthermore, the plasma volume can be varied, for example, by a local change in the magnet position.By increasing the plasma density and volume through local changes in the magnet position, a higher ionization rate is achieved, resulting in better plasma quality, higher particle densities, and higher plasma energies. This makes controllable plasma densities and volumes scalable and thus usable for various applications. Targeted control of these parameters can also lead to greater energy efficiency, as optimized plasma quality reduces energy consumption. Advantages of the invention

[0025] The inventive approach is characterized by the fact that such a plasma source can be used as a PECVD source and for post-ionization in PVD processes. Within the scope of ionization in PECVD processes, the invention enables, for example, ionization of gas atoms and molecules in the vicinity of the substrate. Furthermore, the inventive solution specifically influences a layer property through post-ionization. For example, layer hardness, microstructure, and surface roughness are adjusted. In addition, a higher deposition rate is achieved than with comparable systems. Furthermore, the position of a magnet and antenna arrangement relative to the substrate can be varied within the plasma source device, thereby enabling targeted control of the plasma properties and thus targeted local adjustment of the layer properties.

[0026] Within the scope of post-ionization in PVD processes, the invention allows for combination with other plasma sources, such as a magnetron cathode. The proposed solution achieves a simplified design and accessibility of the device, thus reducing complexity compared to existing systems. Furthermore, simplified adjustability of the ionization range is achieved by varying the distance of the magnets from the substrate or cathode, as well as by varying the magnet strength and the power of the electromagnetic wave coupling. Furthermore, the inventive solution enables simplified process control through ionization of the sputtered material decoupled from the sputtering source and targeted adjustment of the degree of ionization and the plasma density of the sputtered material near the substrate.

[0027] By rotating the substrate and / or the substrate table during plasma surface treatment, uniform treatment of the entire substrate surface is achieved, resulting in a high-quality surface treatment of the substrate. Furthermore, uniform treatment of the substrate reduces the processing time required for surface treatment. Furthermore, the rotation of the substrate and / or the substrate table achieves reproducible surface treatment, with all substrate areas receiving uniform treatment with consistent treatment quality.

[0028] Furthermore, the deposition of layer systems is enabled that were previously impossible with reactive sputtering processes. Furthermore, the plasma source according to this invention is particularly easy to assemble and disassemble, as well as quickly replaceable for decoating components. Furthermore, the plasma source according to the invention offers easy accessibility for checking the magnetization strength and is easily automatable.

[0029] The plasma source according to the invention advantageously allows simultaneous use as a PECVD source and for post-ionization of the sputtered material. Only the gas mixture is changed. Plasma sources according to the invention with advantageous simultaneous use as a PECVD source and for post-ionization of the sputtered material are possible, with only the gas mixture being changed. Furthermore, a plasma source according to the present invention can be used for plasma surface cleaning, PECVD source, and post-ionization without changing the position. Short description of the drawings

[0030] Embodiments of the invention are explained in more detail with reference to the drawings and the following description.

[0031] They show: Fig. 1 a representation of a device according to the invention in a plan view, Fig. 1.1 a purely schematic representation of a magnet arrangement, Fig. 1.2 a purely schematic representation of a parallel magnet arrangement, Fig. 2 a purely schematic representation of the device according to the invention with a further plasma source in plan view, Fig. 3 a purely schematic representation of a device according to the invention with an internal arrangement of magnets on a rotating substrate table and a generator for generating electromagnetic waves within the substrate table with satellites in plan view, Fig. 4 a purely schematic representation of a device according to the invention with an external arrangement of the magnets on a rotating substrate table and a generator for generating electromagnetic waves outside the substrate table with substrate trees in plan view and Fig. 5 a purely schematic representation of a device according to the invention with an external rigid arrangement of the magnets outside a rotating substrate table and a generator for generating electromagnetic waves outside the substrate table with substrate trees and a further plasma source in plan view. Embodiments of the invention

[0032] In the following description of the embodiments of the invention, identical or similar elements are designated by the same reference numerals, whereby a repeated description of these elements is omitted in individual cases. The figures only schematically illustrate the subject matter of the invention.

[0033] Fig. Figure 1 schematically shows a plan view of an apparatus for surface treatment of a substrate 116 using a plasma source 100. The plasma source 100 comprises a vacuum chamber 108 with a voltage source 128, a material feed source 130, wherein a material feed source 130 feeds a material 132a into the vacuum chamber 108, and two permanent magnets 112a, a substrate 116, wherein a substrate position 124a is located in the left area of ​​the vacuum chamber 108, and a device for generating electromagnetic waves 120, wherein the device comprises a generator 104 for electromagnetic waves 120, a conductor 106 for electromagnetic waves 120, and an antenna 102. Here, the conductor 106 is, for example, a waveguide or a coaxial conductor. Further illustrated Fig. 1 purely schematically shows a magnet arrangement 122a of magnets 112, 112a, preferably permanent magnets 112a, and a magnet alignment such that the magnetic field lines 114 run from the south pole to the north pole and form a closed circuit and the electron cyclotron resonance condition is present, wherein a plasma 110 is formed between the magnets 112, 112a.

[0034] The plasma 110 forming between the magnets 112, 112a can be varied, for example, with regard to its properties such as plasma volume and plasma density. This can be achieved, for example, by adjusting the intensity of the electromagnetic waves 120 generated by the generator 104. Furthermore, the plasma volume can be varied, for example, by locally changing the position of the magnet 112b.

[0035] Fig. Figure 1.1 schematically shows a magnet arrangement 122a, 122b in which the magnets 112, 112a are arranged such that the opposite magnetic poles, i.e., N and S, face each other, creating an amplified magnetic field 115 between the magnets 112, 112a. For example, if a gaseous substance such as air is passed between the magnets 112, 112a through the magnetic field 115, it can be ionized and generate a plasma 110.

[0036] Fig. Figure 1.2 schematically shows a parallel magnet arrangement 122b between four magnets 112, 112a. The magnets 112, 112a are aligned parallel, so that the north and south poles of each magnet 112, 112a point in the same direction. In this way, the magnetic fields 115 of the individual magnets 112, 112a add up to a strong, homogeneous magnetic field 115. According to the exemplary parallel magnet arrangement 122b in Fig. 1.2, the performance of the plasma 110 is improved by increasing the plasma density, reducing impurities and improving the homogeneity of the magnetic field 115.

[0037] Fig. Figure 2 shows a purely schematic plan view of an apparatus for surface treatment of a substrate 116 using a plasma source 100. The plasma source 100 comprises a vacuum chamber 108, a voltage source 128, a sputtering source 202, and a material feed source 130, wherein a material feed source 130 feeds a material 132a into the vacuum chamber 108. Furthermore, the plasma source 100 comprises, for example, two permanent magnets 112a, a substrate 116, and a device for generating electromagnetic waves 120, wherein the device comprises a generator 104, a conductor 106, and an antenna 102. The conductor 106 is, for example, a waveguide or a coaxial conductor. Furthermore, Fig. 2 shows, purely schematically, a magnet arrangement 122a, 122b or a magnet alignment such that the electron cyclotron resonance condition is present, wherein, for example, a plasma 110 forms between permanent magnets 112a. The sputtering source 202 can be, for example, a magnetron sputtering source 202 or an evaporator. Due to the exemplary structure and the use of a sputtering source 202, for example, a magnetron, and the electromagnetic waves 120, the sputtering of a material, for example, a gas, is carried out more efficiently and uniformly than with other methods. By controlling the process and the operating parameters of the magnetron, the layer thickness and composition of the layer deposited on the substrate 116 to be treated can be precisely adjusted.

[0038] Fig. 3 shows a purely schematic plan view of an apparatus for surface treatment of, for example, a plurality of substrates 116 by means of a plasma source 100. The plasma source 100 comprises, for example, a vacuum chamber 108, a voltage source 128, a material feed source 130, wherein a material feed source 130 carries out a material feed 132a into the vacuum chamber 108, and a rotatable substrate table 304, wherein a rotation of the substrate table 304 is represented purely schematically by an arrow 316 and a rotation of a substrate 116 by a further arrow 318, wherein the substrates 116 are each fastened, for example, to a rotatable substrate holding device 308, such as a substrate tree, wherein a substrate holding device 308 enables a substrate rotation 134. Furthermore, a conductor 106 is represented, for example, on the substrate table 304 in the center 314, which conductor is connected to the generator 104 (in Fig. 3 not shown) and transmits the electromagnetic waves 120 of the generator 104, wherein the conductor 106 is connected to four antennas 102.

[0039] Furthermore, the plasma source 100 of the exemplary illustration according to Fig. 3 shows a magnet arrangement 122a, 122b comprising twelve magnets 112, 112a arranged on the substrate table 304, for example permanent magnets 112a, with a magnet position 112b corresponding to a uniform arrangement around the center 314 of the substrate table 304 at equal distances from the center 314 of the substrate table 304 and from each other between the substrate holding devices 308 with substrates 116 and the device for generating electromagnetic waves 120. A plasma 110 is generated between the magnets 112, 112a.

[0040] For example, the plasma source 100 according to Fig. 3 can be used in industrial coating areas with a rotatable substrate table 304 and substrate holding devices 308 mounted thereon, wherein the substrates 116 to be coated are mounted on the substrate holding devices 308. The magnet arrangement 122a, 122b of the system is located on the substrate table 304 in combination with a centrally arranged antenna 102. This combination ignites a plasma 110 between the magnets 112, 112a and ionizes the introduced gas for exemplary substrate pretreatment and layer deposition. In addition, the rotation of the substrate table 304 and the substrates 116, the number of magnets 112, 112a, the magnet position 112b, and the electromagnetic waves 120 generated by the centrally arranged generator 104 can be varied.This enables, for example, targeted substrate pretreatment and layer deposition through improved adjustment options for plasma intensity, plasma volume and plasma density.

[0041] Fig. Fig. 4 shows a purely schematic plan view of a device for surface treatment of, for example, several substrates 116 by means of a plasma source 100. The plasma source 100 comprises, for example, a vacuum chamber 108, a voltage source 128, a material feed source 130, wherein a material feed 132a is carried out into the vacuum chamber 108 by a material feed source 130, an apparatus 126 for generating and transmitting electromagnetic waves 120 with a conductor 106, an antenna 102 and a rotatable substrate table 304, the rotatability of which in Fig. 4 by an arrow 316. The conductor 106 with the antenna 102 is located, for example, outside the substrate table 304, with the antenna 102 directed towards the magnets 112, 112a. From the exemplary illustration according to Fig. 4 shows that a magnet arrangement 122a, 122b comprising twelve magnets 112, 112a is arranged on the substrate table 304, which are arranged in a magnet position 112b evenly around the center 314 of the substrate table 304 at equal distances from the center 314 of the substrate table 304 and from one another on the outside of the substrate table 304, and a rotational behavior of a substrate 116 is schematically represented by an arrow 318, and that a plasma 110 is generated between the magnets 112, 112a. Furthermore, the plasma source 100 of the exemplary illustration according to Fig. 4 several substrates 116, wherein in Fig. 4, twelve substrates 116 are arranged, for example, which form a substrate position 124a, which are arranged evenly around the center 314 of the substrate table 304 at equal distances from the center 314 of the substrate table 304 and between the magnet arrangement 122a, 122b and the center 314 of the substrate table 304, wherein the substrates 116 are each fastened, for example, to a rotatable substrate holding device 308, such as a substrate tree, wherein a substrate holding device 308 enables a substrate rotation 134.

[0042] For example, the plasma source 100 according to Fig. 4 may be another possibility of an industrial coating system, wherein the magnets 112, 112a are arranged, for example, according to Fig. 4 are fixedly arranged on the substrate table 304 outside the substrate holding device 308 with substrates 116 arranged thereon. For example, excitation of the electron cyclotron resonance system, wherein the electron cyclotron resonance system is an ECR plasma source 100, can be carried out by a generator 104 for electromagnetic waves 120 outside the substrate table 304. With the rotation of the substrate table 304 in front of the antenna 102, the plasma 110 is ignited, thereby enabling the surface treatment by plasma 110.

[0043] Fig. 5 schematically shows a plan view of an apparatus for surface treatment of, for example, a plurality of substrates 116 by means of a plasma source 100. The plasma source 100 comprises, for example, a vacuum chamber 108, a voltage source 128, a material feed source 130, wherein a material feed 132a is carried out into the vacuum chamber 108 by a material feed source 130, a device for generating and transmitting electromagnetic waves 120 with a conductor 106, an antenna 102, a sputtering source 202 and a rotatable substrate table 304. The sputtering source 202 and the conductor 106 with the antenna 102 are arranged, for example, outside the substrate table 304, wherein the sputtering source 202 and the antenna 102 are arranged side by side and aligned with the magnets 112, 112a. From the exemplary illustration according to Fig. 5 shows that a rigid magnet arrangement 122a, 122b comprising three magnets 112, 112a is arranged on the substrate table 304, which are arranged in a magnet position 112b evenly around the center 314 of the substrate table 304 at equal distances from the center 314 of the substrate table 304 and from each other on the outside of the substrate table 304, directed and arranged towards the sputtering source 202 and the antenna 102, and that a plasma 110 is generated between the magnets 112, 112a. Furthermore, the plasma source 100 of the exemplary illustration according to Fig. 4 several substrates 116, wherein in Fig. 4, twelve substrates 116 are arranged, for example, which form a substrate position 124a, which are arranged evenly around the center 314 of the substrate table 304 at equal distances from the center 314 of the substrate table 304 and between the magnet arrangement 122a, 122b and the center 314 of the substrate table 304, wherein the substrates 116 are each fastened, for example, to a rotatable substrate holding device 308, such as a substrate tree, wherein a substrate holding device 308 enables a substrate rotation 134.

[0044] According to the exemplary illustration in Fig.5, a sputtering source 202 can be used to ionize the sputtered material. The magnet arrangement 122a, 122b generates a plasma volume in front of the substrate 116, thus ionizing the material directly in front of the substrate 116. For example, by applying a substrate bias voltage, the kinetic energy of the ions that occur can be controlled, and thus ultimately the layer properties of the substrate 116. To generate the plasma 110 between the magnets 112, 112a, the electromagnetic waves 120 are coupled via the antenna 102 in the vicinity of the magnets 112, 112a.

[0045] The invention is not limited to the embodiments described here and the aspects highlighted therein. Rather, numerous modifications are possible within the scope of the claims, which are within the scope of one skilled in the art. QUOTES CONTAINED IN THE DESCRIPTION

[0000] This list of documents submitted by the applicant was generated automatically and is included solely for the convenience of the reader. This list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions. Cited patent literature

[0000] DE 10 2020 201 829 A1

[0002] DE 40 10 663 A1

[0003] DE 39 20 835 A1

[0004]

Claims

[1] Plasma source (100) for the surface treatment of one or more substrates (116) comprising: - a vacuum chamber (108); - a voltage source (128); - a material feed source (130) - a magnet arrangement (122a, 122b) with magnets (112, 112a), wherein the magnets (112), preferably permanent magnets (112a), are aligned with one another such that an electron cyclotron resonance condition is met; - an apparatus (126) for generating and transmitting electromagnetic waves (120), the apparatus (126) comprising a generator (104) for generating electromagnetic waves (120), an antenna (102) and a conductor (106); and - at least one or more substrate holding devices (308) for holding the one or more substrates (116), such as a substrate tree, wherein a substrate bias voltage can be applied to the one or more substrates (116) by means of the voltage source (128) which can be switched on and off. [2] Plasma source (100) according to claim 1, wherein the magnets (112, 112a) of the magnet arrangement (122a, 122b) are arranged such that identical magnetic poles are aligned and / or the magnets (112, 112a) are adapted to the geometry of one or more substrates (116). [3] Plasma source (100) according to one of the preceding claims, wherein the plasma source (100) comprises a sputtering source (202) for ionizing a sputtered material, wherein the sputtering source (202) is designed as a magnetron sputtering source (202) or an evaporator. [4] Plasma source (100) according to one of claims 1 to 3, further comprising: - a rotatable substrate table (304), wherein at least one rotatable substrate tree for applying the substrate (116) is arranged on the substrate table (304), - an antenna (102), wherein the antenna (102) is arranged in the center (314) of the substrate table (304), - a magnet arrangement (122a, 122b) arranged on the inside of the substrate table (304) between the substrate holding devices (308) and the antenna (102). [5] Plasma source (100) according to one of claims 1 to 3, comprising: - a rotatable substrate table (304), wherein at least one rotatable substrate tree for applying the substrate (116) is arranged on the substrate table (304), - an antenna (102), wherein the antenna (102) is arranged outside the substrate table (304), - a magnet arrangement (122a, 122b) arranged on the outside of the substrate table (304). [6] Plasma source (100) according to one of claims 1 to 3, comprising: - a rotatable substrate table (304), wherein at least one rotatable substrate tree for applying the substrate (116) is arranged on the substrate table (304), - an antenna (102), wherein the antenna (102) is arranged outside the substrate table (304), - - a magnet arrangement (122a, 122b) which is rigidly arranged outside the substrate table (304). [7] Method for the surface treatment of one or more substrates (116) using a plasma source (100), preferably a plasma source (100) according to one of claims 1 to 6, comprising at least the following method steps: a. arranging one or more substrates (116) in a vacuum chamber (108) to enable treatment of the surface of the substrate (116); b. Placing magnets (112), preferably permanent magnets (112a), relative to one another such that an electron cyclotron resonance condition is met; c. Material feed (132a) d. generating a plasma (110) between the magnets (112, 112a) by an electromagnetic wave (120), wherein the electromagnetic wave (120) is generated by a generator (104); and e. applying a substrate bias voltage, whereby ions from a plasma (110) are accelerated onto a substrate surface (118), producing a surface treatment of the one or more substrates (116). [8] Method according to claim 7, wherein a plasma (110) is generated between the magnets (112, 112a) using an electron cyclotron resonance by an electromagnetic wave (120), wherein an electromagnetic wave (120) is generated via a coupled line (106) of a generator (104). [9] Method according to one of claims 7 to 8, for the surface treatment of one or more substrates (116), wherein the generated plasma (110) is generated by at least one further plasma source (100), such as a sputtering source (202). [10] Method according to one of claims 7 to 9, wherein a plasma intensity of generated plasma (110) is controllable by adjusting the electromagnetic waves (120) via a coupled line (106) of a generator (104). [11] Method according to one of claims 7 to 10, wherein a property of the plasma (110), such as a plasma volume and / or a plasma density, can be locally changed via a magnet position (112b) with respect to a substrate position (124a).

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